CN104316726A - Capacitive accelerometer - Google Patents
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- CN104316726A CN104316726A CN201410561451.2A CN201410561451A CN104316726A CN 104316726 A CN104316726 A CN 104316726A CN 201410561451 A CN201410561451 A CN 201410561451A CN 104316726 A CN104316726 A CN 104316726A
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Abstract
The invention discloses a capacitive accelerometer. The capacitive accelerometer comprises a base plate and a first semiconductor structure layer, wherein the first semiconductor structure layer is arranged on the base plate and comprises a first mass block, a first supporting base, a second supporting base, a first elastic part, a second elastic part, a first comb type capacitor bank and a second comb type capacitor bank. The first supporting base and the second supporting bas respectively correspond to the first axial direction and the second axial direction. The first elastic part is connected between the first mass block and the first supporting base in the mode that the first elastic part perpendicular to the first axial direction is bent back and forth. The second elastic part is connected between the first mass block and the second supporting base in the mode that the second elastic part perpendicular to the second axial direction is bent back and forth. The first comb type capacitor bank and the second comb type capacitor bank are respectively arranged at the positions corresponding to the first axial direction and the second axial direction and connected to the first mass block. The first axial direction is perpendicular to the second axial direction. Therefore, the size of the capacitive accelerometer can be further decreased.
Description
Technical field
The present invention relates to a kind of accelerometer, particularly relate to a kind of capacitive accelerometer.
Background technology
Generally speaking, tradition three axle capacitive accelerometers adopt each sensitive axis independently capacitance sensing structural design, namely be used for sensing the mass of X-axis, Y-axis and Z axis acceleration and its associated sensed electrode assemblie is independently arranged, to reach the object that three axles independently sense.Avoid the linearity of each axle and sensitivity to be subject to the impact of its axle and effect of reducing although this kind of configuration can have on acceleration sensing, reduce the object of mechanical noise to reach simultaneously, tend produces the excessive problem of the overall dimensions of accelerometer.Therefore, how to reduce its overall dimensions further and promote its sensitivity and the linearity is one of current capacitive accelerometer important topic in structural design.
Summary of the invention
The object of the present invention is to provide a kind of capacitive accelerometer, to solve above-mentioned problem.
Based on above-mentioned purpose, the invention provides a kind of capacitive accelerometer, described capacitive accelerometer comprises a substrate and one first semiconductor structure layer.Described first semiconductor structure layer is arranged on the substrate, and described first semiconductor structure layer comprises one first mass, at least one first supporting base, one first elastic component, at least one first comb capacitance group, at least one second supporting base, one second elastic component and at least one second comb capacitance group.Described first supporting base position is at least side of corresponding one first axis of described first mass.Described first elastic component is connected between described first mass and described first supporting base in the mode axially bent back and forth perpendicular to described first, in order to make described first mass when described first axially loaded along described first axial elasticity translation.Described first comb capacitance group is connected at least side of corresponding one second axis of described first mass.Described second supporting base is positioned at least side of corresponding described second axis of described first mass.Described second elastic component is connected between described first mass and described second supporting base in the mode axially bent back and forth perpendicular to described second, in order to make described first mass when described second axially loaded along described second axial elasticity translation.Described second comb capacitance group is connected at least side of corresponding described first axis of described first mass.Described first is axially perpendicular to described second axially.
Described substrate can have at least one sensing electrode, described capacitive accelerometer also can comprise one second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises one second mass and at least one 3rd supporting base.Described second mass axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode.Described 3rd supporting base is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically.When described second mass is at the 3rd axially loaded, described second mass pivotable centered by described rotation axis, the described 3rd is axially perpendicular to described first axis and described second axially.
Described first semiconductor structure layer can comprise 2 first comb capacitance groups, and each first comb capacitance group comprises multiple comb capacitance plate and multiple fixing comb capacitance plate.Described multiple comb capacitance plate extends to form on described first mass.Described multiple fixing comb capacitance plate is fixed on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged.Comb capacitance plate in described 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
Described first semiconductor structure layer can comprise 2 first supporting bases and 2 first elastic components, each first elastic component is connected between described first mass and the first corresponding supporting base in the mode axially bent back and forth perpendicular to described first respectively, and the bending number of times of described 2 first elastic components is different each other.
The present invention separately provides a kind of capacitive accelerometer, comprises a substrate and one first semiconductor structure layer.Described first semiconductor structure layer is arranged on the substrate, and described first semiconductor structure layer comprises one first mass, at least two first supporting bases, 2 first elastic components, at least one first comb capacitance group, at least two second supporting bases, 2 second elastic components and at least one second comb capacitance group.Described at least two first supporting bases lay respectively at least side of corresponding one first axis of described first mass.Described 2 first elastic components are connected between described first mass and the first corresponding supporting base to be parallel to the described first mode axially bent back and forth respectively, in order to make described first mass when second axially loaded along described second axial elasticity translation.Described first comb capacitance group is connected at least side of corresponding described first axis of described first mass.Described at least two second supporting bases, lay respectively at least side of corresponding described first axis of described first mass.Described 2 second elastic components are connected between described first mass and the second corresponding supporting base to be parallel to the described second mode axially bent back and forth respectively, in order to make described first mass when described first axially loaded along described first axial elasticity translation.Described second comb capacitance group is connected at least side of corresponding described second axis of described first mass.The bending number of times of described 2 first elastic components is different each other, and described first is axially perpendicular to described second axially.
Described substrate can have at least one sensing electrode, described capacitive accelerometer also can comprise one second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises one second mass and at least one 3rd supporting base.Described second mass axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode.Described 3rd supporting base is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically.When described second mass is at the 3rd axially loaded, described second mass rotates centered by described rotation axis, and the described 3rd is axially perpendicular to described first axis and described second axially.
Described capacitive accelerometer can comprise 2 first comb capacitance groups, and each first comb capacitance group comprises multiple comb capacitance plate and multiple fixing comb capacitance plate.Described multiple comb capacitance plate extends to form on described first mass.Described multiple fixing comb capacitance plate is fixed on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged.Comb capacitance plate in described 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
The present invention separately provides a kind of capacitive accelerometer, comprises a substrate and one first semiconductor structure layer.Described first semiconductor structure layer is arranged on the substrate, and described first semiconductor structure layer comprises one first mass, at least one first supporting base, one first elastic component, at least one first comb capacitance group, at least one second supporting base, one second elastic component and at least one second comb capacitance group.Described first supporting base is positioned at least side of corresponding one first axis of described first mass.Described first elastic component has one first bending structure and one first staircase structure, the mode that described first bending structure axially bends back and forth with correspondence described first is connected to described first supporting base, and described first staircase structure is connected between described first mass and described first bending structure.Described first comb capacitance group is connected at least side of corresponding described first axis of described first mass.Described second supporting base is positioned at least side of corresponding one second axis of described first mass.Described second elastic component has one second bending structure and one second staircase structure, the mode that described second bending structure axially bends back and forth with correspondence described second is connected to described second supporting base, and described second ladder anatomical connectivity is between described first mass and described second bending structure.Described second comb capacitance group is connected at least side of corresponding described second axis of described first mass.Described first is axially perpendicular to described second axially.
Described first mass can be respectively arranged with a projecting block on the position of described first staircase structure of correspondence and described second staircase structure.
Described substrate can have at least one sensing electrode, described capacitive accelerometer also can comprise one second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises one second mass and at least one 3rd supporting base.Described second mass axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode.Described 3rd supporting base is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically.When described second mass is at the 3rd axially loaded, described second mass rotates centered by described rotation axis, and the described 3rd is axially perpendicular to described first axis and described second axially.
Described first semiconductor structure layer can comprise 2 first comb capacitance groups, and each first comb capacitance group comprises multiple comb capacitance plate and multiple fixing comb capacitance plate.Described multiple comb capacitance plate extends to form on described first mass.Described multiple fixing comb capacitance plate is fixed on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged.Comb capacitance plate in described 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
The mode that described first bending structure axially can bend back and forth perpendicular to described first is connected between described first supporting base and described first staircase structure, and described second bending structure is connected between described second supporting base and described second staircase structure in the mode axially bent back and forth perpendicular to described second.
Described first bending structure can be parallel to the described first mode axially bent back and forth and be connected between described first supporting base and described first staircase structure, and described second bending structure is connected between described second supporting base and described second staircase structure to be parallel to the described second mode axially bent back and forth.
Described first semiconductor structure layer can comprise 2 first supporting bases and 2 first elastic components, the mode that each first bending structure axially bends back and forth with correspondence described first is respectively connected between described first mass and the first corresponding supporting base, and the bending number of times of each the first bending structure is different each other.
The present invention separately provides a kind of capacitive accelerometer, comprises a substrate and one first semiconductor structure layer.Described first semiconductor structure layer is arranged on the substrate, and described first semiconductor structure layer comprises one first mass, at least two first comb capacitance groups, at least one first supporting base, one first elastic component, at least two second comb capacitance groups, at least one second supporting base and one second elastic component.Described at least two first comb capacitance groups are connected at least side of corresponding one first axis of described first mass.Described in described first supporting base is arranged between at least two first comb capacitance groups.The mode that described first elastic component axially bends back and forth with correspondence described first is connected between described first mass and described first supporting base.Described at least two second comb capacitance groups are connected at least side of corresponding one second axis of described first mass.Described in described second supporting base is arranged between at least two second comb capacitance groups.The mode that described second elastic component axially bends back and forth with correspondence described second is connected between described first mass and described second supporting base.Described first is axially perpendicular to described second axially.
Described substrate can have at least one sensing electrode, described capacitive accelerometer also can comprise one second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises one second mass and at least one 3rd supporting base.Described second mass axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode.Described 3rd supporting base is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically.When described second mass is at the 3rd axially loaded, described second mass rotates centered by described rotation axis, and the described 3rd is axially perpendicular to described first axis and described second axially.
Described first semiconductor structure layer can comprise 2 first comb capacitance groups, and each first comb capacitance group comprises multiple comb capacitance plate and multiple fixing comb capacitance plate.Described multiple comb capacitance plate extends to form on described first mass.Described multiple fixing comb capacitance plate is fixed on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged.Comb capacitance plate in described 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
The mode that described first elastic component axially can bend back and forth perpendicular to described first is connected between described first supporting base and described first mass, and described second elastic component is connected between described second supporting base and described first mass in the mode axially bent back and forth perpendicular to described second.
Described first elastic component can be parallel to the described first mode axially bent back and forth and be connected between described first supporting base and described first mass, and described second elastic component is connected between described second supporting base and described first mass to be parallel to the described second mode axially bent back and forth.
Described first semiconductor structure layer can comprise 2 first supporting bases and 2 first elastic components, the mode that each first elastic component axially bends back and forth with correspondence described first is respectively connected between described first mass and the first corresponding supporting base, and the bending number of times of described 2 first elastic components is different each other.
According to technique scheme, the present invention at least has following advantages and beneficial effect compared to prior art: the present invention utilize the elastic component bending mode that changes (as elastic component bending number of times each other different, change elastic component overbending direction etc.), change the group number of comb capacitance plate in comb capacitance group and fixing comb capacitance plate, or change the design of configuration of comb capacitance group and elastic component, to reduce the overall volume of capacitive accelerometer further or to promote capacitive accelerometer in the first axis and second sense linear degree axially and sensitivity.
Accompanying drawing explanation
Fig. 1 is the top view of the capacitive accelerometer proposed according to the first embodiment of the present invention;
Fig. 2 is the side view of second semiconductor structure layer of the 1st figure;
Fig. 3 is the top view of capacitive accelerometer proposed according to a second embodiment of the present invention;
Fig. 4 is the top view of according to the third embodiment of the invention proposed capacitive accelerometer;
Fig. 5 is the top view of capacitive accelerometer proposed according to a fourth embodiment of the invention.
Wherein, description of reference numerals is as follows:
12 substrate 16 second semiconductor structure layer
18,204 first mass 20,306 first supporting bases
24,304 first comb capacitance group 26,312 second supporting bases
30,310 second comb capacitance group 32 comb capacitance plates
34 fixing comb capacitance plate 36 sensing electrodes
38 second mass 40 the 3rd supporting bases
42 rotation axis 210 first bending structures
212 first staircase structure 214 second bending structures
216 second staircase structure 218 projecting blocks
10,100,200,300 capacitive accelerometers
14,102,202,302 first semiconductor structure layer
22,104,206,308 first elastic components
28,106,208,314 second elastic components
Embodiment
Please refer to Fig. 1, Fig. 1 is the top view of the capacitive accelerometer 10 that one first embodiment according to the present invention proposes, as shown in Figure 1, capacitive accelerometer 10 comprises substrate 12,1 first semiconductor structure layer 14 and one second semiconductor structure layer 16.Substrate 12 can by insulating material (as glass or pottery) form, in order to load the first semiconductor structure layer 14 and the second semiconductor structure layer 16 thereon, second semiconductor structure layer 16 is positioned at the side of the first semiconductor structure layer 14, is described respectively below for the structural design of the first semiconductor structure layer 14 and the second semiconductor structure layer 16.
First, in the structural design of the first semiconductor structure layer 14, first semiconductor structure layer 14 comprises one first mass 18, at least one first supporting base 20, at least one first elastic component 22, at least one first comb capacitance group 24, at least one second supporting base 26, at least one second elastic component 28 and at least one second comb capacitance group 30, above-mentioned first supporting base 20, first elastic component 22, first comb capacitance group 24, second supporting base 26, second elastic component 28 and the second comb capacitance group 30 all show four in the 1st figure, wherein the first mass 18 can by semiconductor material (as silicon) form.
In this embodiment, first supporting base 20 is positioned at the both sides of the first mass 18 corresponding first axial (X-direction namely shown in Fig. 1), and the second supporting base 26 is positioned at the both sides of corresponding second axial (Y direction namely Fig. 1 shown in) axially vertical with first of the first mass 18.First elastic component 22 is connected between the first mass 18 and the first supporting base 20 (as shown in Figure 1) in the mode axially bent back and forth perpendicular to first, in order to provide elastic force to make the first mass 18 can along the first axial elasticity translation when the first axially loaded, second elastic component 28 is then be connected between the first mass 18 and the second supporting base 26 (as shown in Figure 1) in the mode axially bent back and forth perpendicular to second, in order to provide elastic force to make the first mass 18 can along the second axial elasticity translation when the second axially loaded.
First comb capacitance group 24 is connected on the both sides of corresponding first axis of the first mass 18, each first comb capacitance group 24 comprises a plurality of comb capacitance plate 32 and a plurality of fixing comb capacitance plate 34, a plurality of comb capacitance plate 32 extends to form on the first mass 18, a plurality of fixing comb capacitance plate 34 is fixed on the substrate 12 and is parallel to each other with a plurality of comb capacitance plate 32 and is alternately arranged, by this, first semiconductor structure layer 14 can utilize the capacitance change of the first comb capacitance group 24 to sense the first mass 18 at the second acceleration axially, and as shown in Figure 1, in this embodiment, comb capacitance plate 32 in 2 first comb capacitance groups 24 is different each other with the group number of fixing comb capacitance plate 34, to produce the effect of the capacitance change of increase by first comb capacitance group 24, thus promote the sensitivity of the first semiconductor structure layer 14 on capacitance variations sensing.Second comb capacitance group 30 is connected on the both sides of corresponding second axis of the first mass 18, by this, first semiconductor structure layer 14 can utilize the capacitance change of the second comb capacitance group 30 to sense the first mass 18 at the first acceleration axially, capacitance sensing as the second comb capacitance group 30 designs, it can refer to above-mentionedly analogizes for the first illustrating of comb capacitance group 24, therefore repeats no more in this.
Then, in the structural design of the second semiconductor structure layer 16, refer to Fig. 1 and Fig. 2, Fig. 2 is the side view of second semiconductor structure layer 16 of the 1st figure.From Fig. 1 and Fig. 2, substrate 12 has at least one sensing electrode 36 (showing two in fig. 2), and the second semiconductor structure layer 16 comprises one second mass 38 and at least one 3rd supporting base 40 (showing two in fig. 2).In this embodiment, second mass 38 axially has a rotation axis 42 along first, 3rd supporting base 40 is connected to rotation axis 42, in order to make the second mass 38 can be axially floating above sensing electrode 36 asymmetrically along second, and produce sense capacitance with sensing electrode 36, by this, when the second mass 38 is when the 3rd axially (i.e. the Z-direction of Fig. 2) is stressed, second mass 38 just can carry out rotating and causing the sense capacitance between itself and sensing electrode 36 to change centered by rotation axis 42, in other words, second semiconductor structure layer 16 can utilize the capacitance change between the second mass 38 and sensing electrode 36 to sense the second mass 38 at the 3rd acceleration axially.Above-mentioned second mass 38 asymmetrically floating design above sensing electrode 36 can be not limited to the configuration mode shown in Fig. 1, that is, second mass 38 also can adopt the design axially along second with rotation axis 42, and then make the second mass 38 can be axially floating above sensing electrode 36 asymmetrically along first, as for which kind of design of employing, it is looked closely the practical application of capacitive accelerometer 10 and determines.
Under above-mentioned configuration, when capacitive accelerometer 10 is stressed in space and when axially having acceleration first, first mass 18 will towards the first axial elasticity translation, now, the spacing of the comb capacitance plate in the second comb capacitance group 30 and fixing comb capacitance plate will change in the first elasticity translation axially to some extent along with the first mass 18, thus cause the capacitance of the second comb capacitance group 30 to change, so can according to the capacitance change of the second comb capacitance group 30, sense capacitive accelerometer 10 further at the first accekeration axially.
In like manner, when capacitive accelerometer 10 is stressed in space and when axially having acceleration second, first mass 18 will towards the second axial elasticity translation, now, the spacing of comb capacitance plate in the first comb capacitance group 24 32 and fixing comb capacitance plate 34 will change in the second elasticity translation axially to some extent along with the first mass 18, thus cause the capacitance of the first comb capacitance group 24 to change, so can according to the capacitance change of the first comb capacitance group 24, sense capacitive accelerometer 10 further at the second accekeration axially.
In addition, when capacitive accelerometer 10 is stressed in space and when axially having acceleration the 3rd, second mass 38 will with rotation axis 42 for rotation center and towards the 3rd axial pivotable, now, the spacing of the second mass 38 and the sensing electrode 36 on substrate 12 will change in the 3rd pivotable axially to some extent along with the second mass 38, thus cause the capacitance between the second mass 38 and sensing electrode 36 to change, so can according to the capacitance change between the second mass 38 and sensing electrode 36, sense capacitive accelerometer 10 further at the 3rd accekeration axially.
In sum, utilize the configuration of mass in the first semiconductor structure layer 14 and supporting base, elastic component and comb capacitance group, and second in semiconductor structure layer 16 can the configuration of sensing electrode on the mass of asymmetric rotational and substrate, capacitive accelerometer 10 can have the function of sensing three axial acceleration.Should be noted, in this embodiment, as shown in Figure 1, utilize the first elastic component 22 to replace the design of the mode that existing elastic component laterally bends back and forth between mass and supporting base perpendicular to the mode that first axially bends back and forth, the effect of the first semiconductor structure layer 14 in the first width reduction axially can be produced.Similarly, utilize the mode that the second elastic component 28 axially bends back and forth perpendicular to second, it also can reach the effect of the first semiconductor structure layer 14 in the second width reduction axially.Thus, just can reach the object of the structure space that saving first semiconductor structure layer 14 takies needed on capacitive accelerometer 10, thus reduce the overall volume of capacitive accelerometer 10 further.
Next, please refer to Fig. 3, the top view of its capacitive accelerometer 100 proposed for one second embodiment according to the present invention, assembly described in second embodiment and the identical person of component numerals described in the first embodiment, represent that it has similar function or structure, capacitive accelerometer 100 and above-described embodiment main difference part are that the bending of elastic component designs, as for the design of capacitive accelerometer 100 on sensing three axial acceleration, it can refer to above-described embodiment and analogizes, therefore repeats no more in this.As shown in Figure 3, capacitive accelerometer 100 comprises substrate 12,1 first semiconductor structure layer 102 and the second semiconductor structure layer 16.First semiconductor structure layer 102 arranges on the substrate 12, it comprises the first mass 18, at least two first supporting base 20, at least two first elastic component 104, at least one first comb capacitance group 24, at least two second supporting base 26, at least two second elastic component 106 and at least one second comb capacitance group 30, above-mentioned first supporting base 20, first elastic component 104, first comb capacitance group 24, second supporting base 26, second elastic component 106, and the second comb capacitance group 30 all shows four in figure 3.
In this embodiment, first elastic component 104 is connected between the first mass 18 and the first supporting base 20 to be parallel to the first mode axially bent back and forth, in order to provide elastic force to make the first mass 18 can along the second axial elasticity translation when the second axially loaded, wherein the bending number of times of the first elastic component 104 is different each other, for example, as shown in Figure 3, the bending number of times being positioned at the upper left of the first mass 18 and the first elastic component 104 of upper right edge is less than the bending number of times of first elastic component 104 at lower-left and the lower right corner place being positioned at the first mass 18, axially translation motion can be produced second more delicately when the second axially loaded to make the first mass 18.In like manner, second elastic component 106 can also be parallel to the second mode axially bent back and forth and be connected between the first mass 18 and the second supporting base 26, in order to provide elastic force to make the first mass 18 can along the first axial elasticity translation when the first axially loaded, and the bending number of times of the second elastic component 106 also can be different each other, axially translation motion can be produced first more delicately to make the first mass 18 when the first axially loaded.Thus, through above-mentioned elastic component bending number of times each other different with quality of assistance block first axially and the second elasticity translation axially more sensitive and design smoothly, capacitive accelerometer 100 first axially and the second sense linear degree axially and sensitivity can further promote.
Next, please refer to Fig. 4, its top view of a capacitive accelerometer 200 for proposing according to of the present invention 1 the 3rd embodiment, assembly described in 3rd embodiment and the identical person of component numerals described in the first embodiment, represent that it has similar function or structure, capacitive accelerometer 200 and the first embodiment main difference part are that the bending of elastic component designs, as for the design of capacitive accelerometer 200 on sensing three axial acceleration, it can refer to above-described embodiment and analogizes, therefore repeats no more in this.As shown in Figure 4, capacitive accelerometer 200 comprises substrate 12,1 first semiconductor structure layer 202, and the second semiconductor structure layer 16.First semiconductor structure layer 202 arranges on the substrate 12, it comprises one first mass 204, at least one first supporting base 20, at least one first elastic component 206, at least one first comb capacitance group 24, at least one second supporting base 26, at least one second elastic component 208, and at least one second comb capacitance group 30, above-mentioned first supporting base 20, first elastic component 206, first comb capacitance group 24, second supporting base 26, second elastic component 208, and the second comb capacitance group 30 all shows four in the diagram.
In this embodiment, first elastic component 206 has one first bending structure 210 and one first staircase structure 212, first bending structure 210 is connected to the first supporting base 20 in the mode that vertical first axially bends back and forth, first staircase structure 212 is connected between the first mass 204 and the first bending structure 210, second elastic component 208 is then have one second bending structure 214 and one second staircase structure 216, second bending structure 214 is connected to the second supporting base 26 in the mode that vertical second axially bends back and forth, second staircase structure 216 is connected between the first mass 204 and the second bending structure 214.Thus, the design utilizing elasticity staircase structure to be connected to elasticity bending structure and mass replaces known technology and only utilizes elasticity bending structure to be connected to the mode of the design of supporting base and mass, the space that first elastic component 206 and the second elastic component 208 take needed in the first semiconductor structure layer 202 just can be reduced accordingly, thus make the first mass 204 can additionally extend to form a projecting block 218 on the position of corresponding first staircase structure 212 and the second staircase structure 216, by this, can when not needing additionally to increase the overall volume of the first semiconductor structure layer 202, increase the overall weight of the first mass 204, and then the translation motion making the first mass 204 produce when the first axis and the second axially loaded can be more sensitive, capacitive accelerometer 200 is promoted in the first axis and second sense linear degree axially and the object of sensitivity to reach.
It is worth mentioning that, the overbending direction of the first elastic component 206 and the second elastic component 208 can be not limited to above-described embodiment, to promote the elasticity of the first semiconductor structure layer 202 in elastic component bending design.For example, it is then can change accordingly to be connected to the second supporting base 26 in the parallel second mode axially bent back and forth that first bending structure 210 of the first elastic component 206 can change the second bending structure 214 being connected to the first supporting base 20, second elastic component 208 in the parallel first mode axially bent back and forth.
Finally, please refer to Fig. 5, the top view of a capacitive accelerometer 300 of Fig. 5 for proposing according to of the present invention 1 the 4th embodiment, assembly described in 4th embodiment person identical with the component numerals described in above-described embodiment, represent that it has similar function or structure, capacitive accelerometer 300 and above-described embodiment main difference part are the configuration of supporting base, elastic component and comb capacitance group, as for the design of capacitive accelerometer 300 on sensing three axial acceleration, it can refer to above-described embodiment and analogizes, therefore repeats no more in this.As shown in Figure 5, capacitive accelerometer 300 comprises substrate 12,1 first semiconductor structure layer 302, and the second semiconductor structure layer 16.First semiconductor structure layer 302 arranges on the substrate 12, it comprises the first mass 18, at least two first comb capacitance group 304, at least one first supporting base 306, at least one first elastic component 308, at least two second comb capacitance group 310, at least one second supporting base 312, and at least one second elastic component 314, above-mentioned first comb capacitance group 304, first supporting base 306, first elastic component 308, second comb capacitance group 310, second supporting base 312, and the second elastic component 314 all shows four in Figure 5.
In this embodiment, first comb capacitance group 304 is connected on the both sides of corresponding first axis of the first mass 18, first supporting base 306 is arranged between the first comb capacitance group 304, second comb capacitance group 310 is then be connected on the both sides of corresponding second axis of the first mass 18, and the second supporting base 312 is arranged between the second comb capacitance group 310.In addition, first elastic component 308 is be connected between the first mass 18 and the first supporting base 306 in the parallel first mode axially bent back and forth, and the second elastic component 314 is connected between the first mass 18 and the second supporting base 312 in the mode that parallel second axially bends back and forth.
Thus, elastic component is utilized to be arranged on design between comb capacitance group, its translation motion that the first mass 18 can be made to produce when the first axis and the second axially loaded can be more sensitive, promotes capacitive accelerometer 300 in the first axis and second sense linear degree axially and the object of sensitivity to reach.
It is worth mentioning that, the different each other design of the group number of the comb capacitance plate of above-mentioned mentioned elastic component bending number of times each other in different and comb capacitance group and fixing comb capacitance plate can interactive application in above-described embodiment, in structural design, have more elasticity to make capacitive accelerometer provided by the present invention.In addition, the second semiconductor structure layer mentioned in above-described embodiment is omissible assembly, to simplify the structural design of capacitive accelerometer of the present invention, in other words, capacitive accelerometer of the present invention can only be configured with the first semiconductor structure layer and only have the function of sensing two axial acceleration.
Compared to the capacitance sensing structural design that prior art adopts each sensitive axis independently to arrange, the present invention uses the second semiconductor structure layer accekeration of sensing the 3rd axis (be used for) to be positioned at the configuration of the side of the first semiconductor structure layer (being used for sensing the accekeration of first and second axis), with the problem that the overall dimensions solving aforementioned accelerometer is excessive.In addition, the present invention also can utilize the elastic component bending mode that changes (as elastic component bending number of times each other different, change elastic component overbending direction etc.), change the group number of comb capacitance plate in comb capacitance group and fixing comb capacitance plate, or change the design of configuration of comb capacitance group and elastic component, to reduce the overall volume of capacitive accelerometer further or to promote capacitive accelerometer in the first axis and second sense linear degree axially and sensitivity.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (13)
1. a capacitive accelerometer, is characterized in that, described capacitive accelerometer comprises:
One substrate; And
One first semiconductor structure layer, arrange on the substrate, described first semiconductor structure layer comprises:
One first mass;
At least one first supporting base, is positioned at least side of corresponding one first axis of described first mass;
One first elastic component, there is one first bending structure and one first staircase structure, the mode that described first bending structure axially bends back and forth with correspondence described first is connected to described first supporting base, and described first staircase structure is connected between described first mass and described first bending structure;
At least one first comb capacitance group, is connected at least side of corresponding described first axis of described first mass;
At least one second supporting base, is positioned at least side of corresponding one second axis of described first mass;
One second elastic component, there is one second bending structure and one second staircase structure, the mode that described second bending structure axially bends back and forth with correspondence described second is connected to described second supporting base, and described second ladder anatomical connectivity is between described first mass and described second bending structure; And
At least one second comb capacitance group, is connected at least side of corresponding described second axis of described first mass;
Wherein said first is axially perpendicular to described second axially.
2. capacitive accelerometer as claimed in claim 1, is characterized in that, described first mass is respectively arranged with a projecting block on the position of described first staircase structure of correspondence and described second staircase structure.
3. capacitive accelerometer as claimed in claim 1, it is characterized in that, described substrate has at least one sensing electrode, and described capacitive accelerometer also comprises:
One second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises:
One second mass, axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode; And
At least one 3rd supporting base, is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically;
Wherein when described second mass is at the 3rd axially loaded, described second mass rotates centered by described rotation axis, and the described 3rd is axially perpendicular to described first axis and described second axially.
4. capacitive accelerometer as claimed in claim 1, it is characterized in that, described first semiconductor structure layer comprises 2 first comb capacitance groups, and each first comb capacitance group comprises:
Multiple comb capacitance plate, extends to form on described first mass; And
Multiple fixing comb capacitance plate, fixes on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged;
Comb capacitance plate in wherein said 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
5. capacitive accelerometer as claimed in claim 1, it is characterized in that, described first bending structure is connected between described first supporting base and described first staircase structure in the mode axially bent back and forth perpendicular to described first, and described second bending structure is connected between described second supporting base and described second staircase structure in the mode axially bent back and forth perpendicular to described second.
6. capacitive accelerometer as claimed in claim 1, it is characterized in that, described first bending structure is connected between described first supporting base and described first staircase structure to be parallel to the described first mode axially bent back and forth, and described second bending structure is connected between described second supporting base and described second staircase structure to be parallel to the described second mode axially bent back and forth.
7. capacitive accelerometer as claimed in claim 1, it is characterized in that, described first semiconductor structure layer comprises 2 first supporting bases and 2 first elastic components, the mode that each first bending structure axially bends back and forth with correspondence described first is respectively connected between described first mass and the first corresponding supporting base, and the bending number of times of each the first bending structure is different each other.
8. a capacitive accelerometer, is characterized in that, described capacitive accelerometer comprises:
One substrate; And
One first semiconductor structure layer, arrange on the substrate, described first semiconductor structure layer comprises:
One first mass;
At least two first comb capacitance groups, are connected at least side of corresponding one first axis of described first mass;
At least one first supporting base, described in being arranged between at least two first comb capacitance groups;
One first elastic component, is connected between described first mass and described first supporting base in the mode that correspondence described first axially bends back and forth;
At least two second comb capacitance groups, are connected at least side of corresponding one second axis of described first mass;
At least one second supporting base, described in being arranged between at least two second comb capacitance groups; And
One second elastic component, is connected between described first mass and described second supporting base in the mode that correspondence described second axially bends back and forth;
Wherein said first is axially perpendicular to described second axially.
9. capacitive accelerometer as claimed in claim 8, it is characterized in that, described substrate has at least one sensing electrode, and described capacitive accelerometer also comprises:
One second semiconductor structure layer, arrange on the substrate and be positioned at the side of described first semiconductor structure layer, described second semiconductor structure layer comprises:
One second mass, axially has a rotation axis along described first axis or described second, is used for producing a sense capacitance with described sensing electrode; And
At least one 3rd supporting base, is connected to described rotation axis, in order to make described second mass floating above described sensing electrode asymmetrically;
Wherein when described second mass is at the 3rd axially loaded, described second mass rotates centered by described rotation axis, and the described 3rd is axially perpendicular to described first axis and described second axially.
10. capacitive accelerometer as claimed in claim 8, it is characterized in that, described first semiconductor structure layer comprises 2 first comb capacitance groups, and each first comb capacitance group comprises:
Multiple comb capacitance plate, extends to form on described first mass; And
Multiple fixing comb capacitance plate, fixes on the substrate and is parallel to each other with described multiple comb capacitance plate and is alternately arranged;
Comb capacitance plate in wherein said 2 first comb capacitance groups and the group number of fixing comb capacitance plate different each other.
11. capacitive accelerometers as claimed in claim 8, it is characterized in that, described first elastic component is connected between described first supporting base and described first mass in the mode axially bent back and forth perpendicular to described first, and described second elastic component is connected between described second supporting base and described first mass in the mode axially bent back and forth perpendicular to described second.
12. capacitive accelerometers as claimed in claim 8, it is characterized in that, described first elastic component is connected between described first supporting base and described first mass to be parallel to the described first mode axially bent back and forth, and described second elastic component is connected between described second supporting base and described first mass to be parallel to the described second mode axially bent back and forth.
13. capacitive accelerometers as claimed in claim 8, it is characterized in that, described first semiconductor structure layer comprises 2 first supporting bases and 2 first elastic components, the mode that each first elastic component axially bends back and forth with correspondence described first is respectively connected between described first mass and the first corresponding supporting base, and the bending number of times of described 2 first elastic components is different each other.
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| CN201410561451.2A CN104316726B (en) | 2012-03-20 | 2012-03-20 | capacitive accelerometer |
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| CN201210076677.4A CN103018486B (en) | 2011-09-26 | 2012-03-20 | Capacitive accelerometer |
| CN201410561451.2A CN104316726B (en) | 2012-03-20 | 2012-03-20 | capacitive accelerometer |
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| CN201210076677.4A Division CN103018486B (en) | 2011-09-26 | 2012-03-20 | Capacitive accelerometer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110058052A (en) * | 2019-04-02 | 2019-07-26 | 杭州士兰微电子股份有限公司 | Inertial sensor and its manufacturing method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1425899A (en) * | 2001-12-03 | 2003-06-25 | 株式会社电装 | Semiconductor dynamic size sensor |
| US7258011B2 (en) * | 2005-11-21 | 2007-08-21 | Invensense Inc. | Multiple axis accelerometer |
| CN101666813A (en) * | 2008-09-05 | 2010-03-10 | 财团法人工业技术研究院 | Multi-axis capacitive accelerometer |
| CN101738496A (en) * | 2008-11-18 | 2010-06-16 | 财团法人工业技术研究院 | multi-axis capacitive accelerometer |
| US7793544B2 (en) * | 2006-07-14 | 2010-09-14 | Stmicroelectronics S.R.L. | Microelectromechanical inertial sensor, in particular for free-fall detection applications |
| US7886601B2 (en) * | 2006-10-27 | 2011-02-15 | Stmicroelectronics S.R.L. | Microelectromechanical sensor having multiple full-scale and sensitivity values |
-
2012
- 2012-03-20 CN CN201410561451.2A patent/CN104316726B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1425899A (en) * | 2001-12-03 | 2003-06-25 | 株式会社电装 | Semiconductor dynamic size sensor |
| US7258011B2 (en) * | 2005-11-21 | 2007-08-21 | Invensense Inc. | Multiple axis accelerometer |
| US7793544B2 (en) * | 2006-07-14 | 2010-09-14 | Stmicroelectronics S.R.L. | Microelectromechanical inertial sensor, in particular for free-fall detection applications |
| US7886601B2 (en) * | 2006-10-27 | 2011-02-15 | Stmicroelectronics S.R.L. | Microelectromechanical sensor having multiple full-scale and sensitivity values |
| CN101666813A (en) * | 2008-09-05 | 2010-03-10 | 财团法人工业技术研究院 | Multi-axis capacitive accelerometer |
| CN101738496A (en) * | 2008-11-18 | 2010-06-16 | 财团法人工业技术研究院 | multi-axis capacitive accelerometer |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110058052A (en) * | 2019-04-02 | 2019-07-26 | 杭州士兰微电子股份有限公司 | Inertial sensor and its manufacturing method |
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