CN104316726B - capacitive accelerometer - Google Patents
capacitive accelerometer Download PDFInfo
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- CN104316726B CN104316726B CN201410561451.2A CN201410561451A CN104316726B CN 104316726 B CN104316726 B CN 104316726B CN 201410561451 A CN201410561451 A CN 201410561451A CN 104316726 B CN104316726 B CN 104316726B
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Abstract
The invention discloses a capacitive accelerometer. The capacitive accelerometer comprises a base plate and a first semiconductor structure layer, wherein the first semiconductor structure layer is arranged on the base plate and comprises a first mass block, a first supporting base, a second supporting base, a first elastic part, a second elastic part, a first comb type capacitor bank and a second comb type capacitor bank. The first supporting base and the second supporting bas respectively correspond to the first axial direction and the second axial direction. The first elastic part is connected between the first mass block and the first supporting base in the mode that the first elastic part perpendicular to the first axial direction is bent back and forth. The second elastic part is connected between the first mass block and the second supporting base in the mode that the second elastic part perpendicular to the second axial direction is bent back and forth. The first comb type capacitor bank and the second comb type capacitor bank are respectively arranged at the positions corresponding to the first axial direction and the second axial direction and connected to the first mass block. The first axial direction is perpendicular to the second axial direction. Therefore, the size of the capacitive accelerometer can be further decreased.
Description
Technical field
The present invention relates to a kind of accelerometer, more particularly to a kind of capacitive accelerometer.
Background technology
In general, capacitance sensing structure design of traditional three axles capacitive accelerometer using each sensitive axis independence,
The mass sensing electrode component associated therewith for being exactly used for sensing X-axis, Y-axis and Z axis acceleration is independently arranged, to reach
The purpose that three axles are independently sensed.The linearity of each axle and sensitivity is avoided to receive although this kind of configuration can have on acceleration sensing
The effect for affecting to its axle and reducing, but in order to reduce the purpose of mechanical noise simultaneously, will often produce acceleration
The excessive problem of the overall dimensions of meter.Therefore, how further to reduce its overall dimensions and lift its sensitivity and the linearity
For one of the important topic of current capacitive accelerometer in structure design.
The content of the invention
It is an object of the invention to provide a kind of capacitive accelerometer, to solve above-mentioned problem.
Based on above-mentioned purpose, the present invention provides a kind of capacitive accelerometer, and the capacitive accelerometer includes a base
Plate and one first semiconductor structure layer.First semiconductor structure layer is arranged on the substrate, first semiconductor junction
Structure layer includes that one first mass, at least one first support pedestal, one first elastic component, at least one first comb capacitance group, extremely
Few one second supports pedestal, one second elastic component and at least one second comb capacitance group.Described first supports pedestal position described
At least side of one first axial direction of the first mass correspondence.First elastic component is so that perpendicular to the first axle, always back bending is rolled over
Mode be connected to first mass and described first support between pedestal, to make first mass described the
Translate along first axial elasticity during one axially loaded.The first comb capacitance group is connected to the first mass correspondence
On at least side of one second axial direction.Described second supports pedestal to be located at first mass correspondence, second axial direction extremely
Few side.Second elastic component by perpendicular to described second axially bend back and forth in the way of be connected to first mass and
Described second supports between pedestal, to make first mass in second axially loaded along the described second axial bullet
Mild-natured shifting.The second comb capacitance group is connected at least side of the first mass correspondence first axial direction.Institute
State first and be axially perpendicular to described second axially.
The substrate can have an at least sensing electrode, and the capacitive accelerometer can also include that one the second half leads
Body structure sheaf, is arranged on the substrate and positioned at the side of first semiconductor structure layer, second semiconductor structure
Layer includes one second mass and at least one the 3rd support pedestal.Second mass is axial or described second along described first
Axially there is a rotary shaft, for producing a sense capacitance with the sensing electrode.The 3rd support pedestal is connected to described
Rotary shaft, to make the second mass asymmetrically floating top in the sensing electrode.When second mass
In three axially loaded, second mass is pivoted centered on the rotary shaft, and the described 3rd is axially perpendicular to institute
State the first axial and described second axial direction.
First semiconductor structure layer can include 2 first comb capacitance groups, include per one first comb capacitance group many
Individual comb capacitance plate and multiple fixed comb capacitance plates.The plurality of comb capacitance plate extends shape from first mass
Into.The plurality of fixed comb capacitance plate is fixed and is parallel to each other and replaces on the substrate and with the plurality of comb capacitance plate
Arrangement.Comb capacitance plate in described 2 first comb capacitance groups is different each other with the group number of fixed comb capacitance plate.
First semiconductor structure layer can include that 2 first support pedestal and 2 first elastic components, elastic per one first
Part is connected to first mass and corresponding first in the way of perpendicular to the first axle always back bending folding respectively
Between support group seat, the bending number of times of described 2 first elastic components is different each other.
The present invention separately provides a kind of capacitive accelerometer, including a substrate and one first semiconductor structure layer.Described
Semiconductor structure layer is arranged on the substrate, first semiconductor structure layer include one first mass, at least 2 the
One supports pedestal, 2 first elastic components, at least one first comb capacitance group, at least 2 second to support pedestal, 2 second elastic components
And at least one second comb capacitance group.Described at least 2 first support pedestal to be located at first mass correspondence one first respectively
At least side of axial direction.Described 2 first elastic components are connected to institute in the way of parallel to the first axle always back bending folding respectively
State between the first mass and corresponding first support pedestal, to make first mass in second axially loaded
Along second axial elasticity translation.The first comb capacitance group is connected to the first mass correspondence described first axially
At least side on.Described at least 2 second support pedestal, respectively positioned at first mass correspondence, first axial direction
At least side.Described 2 second elastic components are connected to described first in the way of axially bending back and forth parallel to described second respectively
Between mass and the second corresponding support pedestal, to make first mass in first axially loaded along institute
State the translation of the first axial elasticity.The second comb capacitance group is connected to the first mass correspondence second axial direction extremely
On few side.The bending number of times of described 2 first elastic components is different each other, and described first is axially perpendicular to described second axially.
The substrate can have an at least sensing electrode, and the capacitive accelerometer can also include that one the second half leads
Body structure sheaf, is arranged on the substrate and positioned at the side of first semiconductor structure layer, second semiconductor structure
Layer includes one second mass and at least one the 3rd support pedestal.Second mass is axial or described second along described first
Axially there is a rotary shaft, for producing a sense capacitance with the sensing electrode.The 3rd support pedestal is connected to described
Rotary shaft, to make the second mass asymmetrically floating top in the sensing electrode.When second mass
In three axially loaded, second mass is rotated centered on the rotary shaft, and the described 3rd is axially perpendicular to institute
State the first axial and described second axial direction.
The capacitive accelerometer can include 2 first comb capacitance groups, include per one first comb capacitance group multiple
Comb capacitance plate and multiple fixed comb capacitance plates.The plurality of comb capacitance plate extends formation from first mass.
The plurality of fixed comb capacitance plate is fixed and is parallel to each other and replaces row on the substrate and with the plurality of comb capacitance plate
Row.Comb capacitance plate in described 2 first comb capacitance groups is different each other with the group number of fixed comb capacitance plate.
The present invention separately provides a kind of capacitive accelerometer, including a substrate and one first semiconductor structure layer.Described
Semiconductor structure layer is arranged on the substrate, first semiconductor structure layer include one first mass, at least 1 the
One supports pedestal, one first elastic component, at least one first comb capacitance group, at least one second to support pedestal, one second elastic component
And at least one second comb capacitance group.Described first supports pedestal to be located at first mass correspondence, one first axial direction at least
Side.First elastic component has one first bending structure and one first hierarchic structure, and first bending structure is with correspondence
Always the mode of back bending folding is connected to described first and supports pedestal, first hierarchic structure to be connected to described the first axle
Between one mass and first bending structure.It is described that the first comb capacitance group is connected to the first mass correspondence
On at least side of the first axial direction.Described second supports pedestal to be located at least the one of first mass correspondence, one second axial direction
Side.Second elastic component has one second bending structure and one second hierarchic structure, and second bending structure is with correspondence institute
State the second mode for axially bending back and forth and be connected to the second support pedestal, second hierarchic structure is connected to described first
Between mass and second bending structure.The second comb capacitance group is connected to first mass correspondence described the
On at least side of two axial directions.Described first is axially perpendicular to described second axially.
First mass can divide on the position of correspondence first hierarchic structure and second hierarchic structure
It is not provided with a projecting block.
The substrate can have an at least sensing electrode, and the capacitive accelerometer can also include that one the second half leads
Body structure sheaf, is arranged on the substrate and positioned at the side of first semiconductor structure layer, second semiconductor structure
Layer includes one second mass and at least one the 3rd support pedestal.Second mass is axial or described second along described first
Axially there is a rotary shaft, for producing a sense capacitance with the sensing electrode.The 3rd support pedestal is connected to described
Rotary shaft, to make the second mass asymmetrically floating top in the sensing electrode.When second mass
In three axially loaded, second mass is rotated centered on the rotary shaft, and the described 3rd is axially perpendicular to institute
State the first axial and described second axial direction.
First semiconductor structure layer can include 2 first comb capacitance groups, include per one first comb capacitance group many
Individual comb capacitance plate and multiple fixed comb capacitance plates.The plurality of comb capacitance plate extends shape from first mass
Into.The plurality of fixed comb capacitance plate is fixed and is parallel to each other and replaces on the substrate and with the plurality of comb capacitance plate
Arrangement.Comb capacitance plate in described 2 first comb capacitance groups is different each other with the group number of fixed comb capacitance plate.
First bending structure can be connected to described first perpendicular to the first axle mode that always back bending is rolled over
Between support group seat and first hierarchic structure, second bending structure is with perpendicular to the described second side for axially bending back and forth
Formula is connected to described second and supports between pedestal and second hierarchic structure.
First bending structure can be connected to described first parallel to the first axle mode that always back bending is rolled over
Between support group seat and first hierarchic structure, second bending structure is with parallel to the described second side for axially bending back and forth
Formula is connected to described second and supports between pedestal and second hierarchic structure.
First semiconductor structure layer can include that 2 first support pedestal and 2 first elastic components, per one first bending
Structure is connected to first mass and corresponding first in the way of the correspondence first axle always back bending folding respectively
Between support group seat, the bending number of times per one first bending structure is different each other.
The present invention separately provides a kind of capacitive accelerometer, including a substrate and one first semiconductor structure layer.Described
Semiconductor structure layer is arranged on the substrate, first semiconductor structure layer include one first mass, at least 2 the
One comb capacitance group, at least one first support pedestal, one first elastic component, at least 2 second comb capacitance groups, at least one second
Support pedestal and one second elastic component.At least 2 first comb capacitance groups are connected to the first mass correspondence one first
On at least side of axial direction.The first support pedestal is arranged on described at least between 2 first comb capacitance groups.Described first
Elastic component is connected to first mass and the first support pedestal in the way of the correspondence first axle always back bending folding
Between.At least 2 second comb capacitance groups are connected at least side of one second axial direction of the first mass correspondence.
The second support pedestal is arranged on described at least between 2 second comb capacitance groups.Second elastic component is with correspondence described the
Two modes for axially bending back and forth are connected between first mass and the second support pedestal.Described first axially hangs down
Directly in described second axially.
The substrate can have an at least sensing electrode, and the capacitive accelerometer can also include that one the second half leads
Body structure sheaf, is arranged on the substrate and positioned at the side of first semiconductor structure layer, second semiconductor structure
Layer includes one second mass and at least one the 3rd support pedestal.Second mass is axial or described second along described first
Axially there is a rotary shaft, for producing a sense capacitance with the sensing electrode.The 3rd support pedestal is connected to described
Rotary shaft, to make the second mass asymmetrically floating top in the sensing electrode.When second mass
In three axially loaded, second mass is rotated centered on the rotary shaft, and the described 3rd is axially perpendicular to institute
State the first axial and described second axial direction.
First semiconductor structure layer can include 2 first comb capacitance groups, include per one first comb capacitance group many
Individual comb capacitance plate and multiple fixed comb capacitance plates.The plurality of comb capacitance plate extends shape from first mass
Into.The plurality of fixed comb capacitance plate is fixed and is parallel to each other and replaces on the substrate and with the plurality of comb capacitance plate
Arrangement.Comb capacitance plate in described 2 first comb capacitance groups is different each other with the group number of fixed comb capacitance plate.
First elastic component can be connected to described first and support perpendicular to the first axle mode that always back bending is rolled over
Between pedestal and first mass, second elastic component is connected in the way of bending back and forth perpendicular to the described second axial direction
Support between pedestal and first mass described second.
First elastic component can be connected to described first and support parallel to the first axle mode that always back bending is rolled over
Between pedestal and first mass, second elastic component is connected in the way of axially bending back and forth parallel to described second
Support between pedestal and first mass described second.
First semiconductor structure layer can include that 2 first support pedestal and 2 first elastic components, elastic per one first
Part is connected to respectively first mass and the first corresponding support in the way of the correspondence first axle always back bending folding
Between pedestal, the bending number of times of described 2 first elastic components is different each other.
According to above-mentioned technical proposal, the present invention at least has following advantages and beneficial effect compared to prior art：This
It is bright to bend mode (such as elastic component bending number of times is different each other, change elastic component overbending direction), change using change elastic component
The group number of comb capacitance plate in comb capacitance group and fixed comb capacitance plate, or change matching somebody with somebody for comb capacitance group and elastic component
The design put, further to reduce the overall volume of capacitive accelerometer or lift capacitive accelerometer in first axle
To and the second axial direction on sense linear degree and sensitivity.
Description of the drawings
Fig. 1 is the top view of the capacitive accelerometer that first embodiment of the invention is proposed；
Fig. 2 is the side view of the second semiconductor structure layer of the 1st figure；
Fig. 3 is the top view of the capacitive accelerometer for being proposed according to the second embodiment of the present invention；
Fig. 4 is the top view of the capacitive accelerometer for according to the third embodiment of the invention being proposed；
Fig. 5 is the top view of the capacitive accelerometer for being proposed according to the fourth embodiment of the invention.
Wherein, description of reference numerals is as follows：
The semiconductor structure layer of 12 substrate 16 second
18th, 204 first mass 20,306 first supports pedestal
24th, 304 first comb capacitance group 26,312 second supports pedestal
30th, the comb capacitance plate of 310 second comb capacitance group 32
34 fix the sensing electrode of comb capacitance plate 36
38 second mass 40 the 3rd supports pedestal
The bending structure of 42 rotary shaft 210 first
The bending structure of 212 first hierarchic structure 214 second
The projecting block of 216 second hierarchic structure 218
10th, 100,200,300 capacitive accelerometer
14th, 102,202,302 first semiconductor structure layer
22nd, 104,206,308 first elastic component
28th, 106,208,314 second elastic component
Specific embodiment
Fig. 1 is refer to, Fig. 1 is the upper of the capacitive accelerometer 10 that a first embodiment of the invention is proposed
View, as shown in Figure 1, capacitive accelerometer 10 includes a substrate 12, one first semiconductor structure layer 14 and one the second half
Conductor structure layer 16.Substrate 12 can be made up of insulant (such as glass or ceramics), to load the first semiconductor structure layer
14 and second semiconductor structure layer 16 thereon, the second semiconductor structure layer 16 is located at the side of the first semiconductor structure layer 14,
Illustrate for the structure design of the first semiconductor structure layer 14 and the second semiconductor structure layer 16 individually below.
First, in terms of the structure design of the first semiconductor structure layer 14, the first semiconductor structure layer 14 includes one first
Mass 18, at least one first support pedestal 20, at least one first elastic component 22, at least one first comb capacitance group 24, at least
One second supports pedestal 26, at least one second elastic component 28 and at least one second comb capacitance group 30, and above-mentioned first supports pedestal
20th, the first elastic component 22, the first comb capacitance group 24, second support pedestal 26, the second elastic component 28 and the second comb capacitance group
30 show four in the 1st figure, wherein the first mass 18 can be made up of semi-conducting material (such as silicon).
In this embodiment, first pedestal 20 is supported to be located at the axially (X i.e. shown in Fig. 1 of the correspondence of the first mass 18 first
Direction of principal axis) both sides, the second support pedestal 26 is located at the correspondence of the first mass 18 axially vertical with first second axially (schemes
Y direction shown in 1) both sides.First elastic component 22 is connected to the first matter in the way of perpendicular to first axle always back bending folding
Gauge block 18 and first is supported between pedestal 20 (as shown in Figure 1), to provide elastic force so that the first mass 18 is in the first axial direction
Can translate along the first axial elasticity during stress, and the second elastic component 28 is connected in the way of bending back and forth perpendicular to the second axial direction
It is connected on the first mass 18 and second to support between pedestal 26 (as shown in Figure 1), to provide elastic force so that the first mass 18
Can translate along the second axial elasticity in the second axially loaded.
First comb capacitance group 24 is connected on the both sides of first axial direction of the correspondence of the first mass 18, per one first comb
Shape capacitance group 24 includes a plurality of comb capacitance plates 32 and a plurality of fixed comb capacitance plates 34, and a plurality of comb capacitance plates 32 are certainly
On first mass 18 extend formed, a plurality of fixed comb capacitance plates 34 fix on the substrate 12 and with a plurality of comb capacitances
Plate 32 is parallel to each other and is alternately arranged, and thereby, the first semiconductor structure layer 14 is i.e. using the electric capacity of the first comb capacitance group 24
Variable quantity senses acceleration of first mass 18 on the second axial direction, and as shown in Figure 1, in this embodiment, 2 first comb
Comb capacitance plate 32 in shape capacitance group 24 is different each other with the group number of fixed comb capacitance plate 34, increases by the first pectination to produce
The effect of the capacitance change of capacitance group 24 is sensitive on capacitance variations sensing so as to lift the first semiconductor structure layer 14
Degree.Second comb capacitance group 30 is connected on the both sides of second axial direction of the correspondence of the first mass 18, thereby, the first quasiconductor
Structure sheaf 14 i.e. using the capacitance change of the second comb capacitance group 30 sense the first mass 18 first axle upwards plus
Speed, designs as the capacitance sensing of the second comb capacitance group 30, and it can refer to and above-mentioned is directed to saying for the first comb capacitance group 24
It is bright to analogize, therefore repeat no more in this.
Then, in terms of the structure design of the second semiconductor structure layer 16, it is the of the 1st figure to refer to Fig. 1 and Fig. 2, Fig. 2
The side view of two semiconductor structure layers 16.From Fig. 1 and Fig. 2, there is substrate 12 an at least sensing electrode 36 (to show in fig. 2
Show two), the second semiconductor structure layer 16 includes that one second mass 38 and at least one the 3rd support pedestal 40 (show in fig. 2
Show two).In this embodiment, the second mass 38 axially has a rotary shaft 42 along first, and the 3rd support pedestal 40 connects
In rotary shaft 42, to make the second mass 38 can along the second axially asymmetric floating top in sensing electrode 36, and with
Sensing electrode 36 produces sense capacitance, thereby, when the second mass 38 is in the 3rd axially (i.e. the Z-direction of Fig. 2) stress, the
Two masses 38 just can cause it to produce with the sense capacitance between sensing electrode 36 so that rotary shaft 42 is pivoted about
Change, in other words, the second semiconductor structure layer 16 is using the capacitance variations between the second mass 38 and sensing electrode 36
Amount senses acceleration of second mass 38 on the 3rd axial direction.Above-mentioned second mass 38 is asymmetrically floating in sensing electricity
The design of the top of pole 36 can be not limited to the configuration mode shown in Fig. 1, that is to say, that the second mass 38 may also be employed along second
The axially design with rotary shaft 42, and then make the second mass 38 axially asymmetrically floating in sensing electrode 36 along first
Top, as using which kind of design, depending on the practical application of its end apparent capacity formula accelerometer 10.
Under above-mentioned configuration, when capacitive accelerometer 10 in space stress and first axle upwards have acceleration
When, the first mass 18 will be translated towards the first axial elasticity, now, the comb capacitance plate in the second comb capacitance group 30 with it is solid
Determine comb capacitance plate spacing will with the first mass 18 first axle upwards elasticity translation and be varied from, so as to lead
The capacitance for causing the second comb capacitance group 30 changes, so can according to the capacitance change of the second comb capacitance group 30,
Further sense the accekeration in first axle upwards of capacitive accelerometer 10.
In the same manner, when capacitive accelerometer 10 in space stress and on the second axial direction have acceleration when, the first matter
Gauge block 18 will be translated towards the second axial elasticity, now, the comb capacitance plate 32 and fixed pectination in the first comb capacitance group 24
The spacing of capacitor board 34 will be varied from elasticity translation of first mass 18 on the second axial direction, so as to cause the
The capacitance of one comb capacitance group 24 changes, and so can enter one according to the capacitance change of the first comb capacitance group 24
Sense accekeration of the capacitive accelerometer 10 on the second axial direction to step.
In addition, when capacitive accelerometer 10 in space stress and when there is acceleration on the 3rd axial direction, the
Two masses 38 will be axially pivoting towards the 3rd as center of rotation with rotary shaft 42, now, the second mass 38 and substrate 12
On the spacing of sensing electrode 36 will be varied from pivot of second mass 38 on the 3rd axial direction, so as to cause
Capacitance between second mass 38 and sensing electrode 36 changes, so can be according to the second mass 38 and sensing electricity
Capacitance change between pole 36, further senses accekeration of the capacitive accelerometer 10 on the 3rd axial direction.
In sum, using the mass in the first semiconductor structure layer 14 and support pedestal, elastic component and comb capacitance
The configuration of group, and in the second semiconductor structure layer 16 can on mass and the substrate of asymmetric rotational sensing electrode match somebody with somebody
Put, capacitive accelerometer 10 there can be the function of sensing three axial acceleration.It is noted that in this embodiment, by Fig. 1
Understand, existing elastic component is replaced in mass and support perpendicular to the first axle mode that always back bending is rolled over using the first elastic component 22
The design of the mode laterally bent back and forth between pedestal, you can produce width of first semiconductor structure layer 14 in first axle upwards
The effect of degree reduction.Similarly, using the second elastic component 28 perpendicular to the second mode for axially bending back and forth, it also can reach the
The effect of width reduction of the semiconductor structure layer 14 on the second axial direction.Consequently, it is possible to can just reach the first quasiconductor of saving
The purpose of the structure space of required occupancy on capacitive accelerometer 10 of structure sheaf 14, adds so as to further reduce condenser type
The overall volume of velometer 10.
Next, refer to Fig. 3, it is the capacitive accelerometer proposed according to a second embodiment of the present invention
100 top view, the person identical with the component numerals described in first embodiment of the component described in second embodiment represents its tool
There are similar function or structure, capacitive accelerometer 100 and the bending that above-described embodiment main difference part is elastic component
Design, as design of the capacitive accelerometer 100 on sensing three axial acceleration, it can refer to above-described embodiment and analogizes,
Therefore repeat no more in this.From the figure 3, it may be seen that capacitive accelerometer 100 include substrate 12, one first semiconductor structure layer 102 and
Second semiconductor structure layer 16.First semiconductor structure layer 102 is arranged on the substrate 12, and it includes the first mass 18, at least
2 first support pedestal 20, at least 2 first elastic components 104, at least one first comb capacitance group 24, at least 2 second support groups
26, at least 2 second elastic components 106 of seat and at least one second comb capacitance group 30, above-mentioned first supports pedestal 20, first elastic
Part 104, the first comb capacitance group 24, second support pedestal 26, the second elastic component 106, and the second comb capacitance group 30 is in figure 3
Show four.
In this embodiment, the first elastic component 104 is connected to the first matter in the way of parallel to first axle always back bending folding
Gauge block 18 and first is supported between pedestal 20, to provide elastic force so that the first mass 18 can be along the in the second axially loaded
Two axial elasticities are translated, wherein the bending number of times of the first elastic component 104 is different each other, for example, as shown in figure 3, being located at the
The bending number of times of the upper left of one mass 18 and the first elastic component 104 of upper right edge is less than positioned at a left side for the first mass 18
The bending number of times of the first elastic component 104 at lower and lower right corner, so that the first mass 18 can be more in the second axially loaded
Delicately produce translational motion on the second axial direction.In the same manner, the second elastic component 106 axially can also back and forth bend parallel to second
Mode be connected to the first mass 18 and second support between pedestal 26, to provide elastic force so that the first mass 18 is the
Can translate along the first axial elasticity during one axially loaded, and the bending number of times of the second elastic component 106 also can be different each other, so that the
One mass 18 more delicately can upwards produce translational motion in the first axially loaded in first axle.Consequently, it is possible to through upper
State elastic component bending number of times each other it is different with quality of assistance block in first axle upwards and on the second axial direction elasticity translation more
Ground is sensitive and smoothly design, and capacitive accelerometer 100 is in the first sense linear degree axially and on the second axial direction and sensitive
Degree can be lifted further.
Next, refer to Fig. 4, it is the capacitive accelerometer proposed according to a 3rd embodiment of the present invention
200 top view, the person identical with the component numerals described in first embodiment of the component described in 3rd embodiment represents its tool
There are similar function or structure, capacitive accelerometer 200 and the bending that first embodiment main difference part is elastic component
Design, as design of the capacitive accelerometer 200 on sensing three axial acceleration, it can refer to above-described embodiment and analogizes,
Therefore repeat no more in this.As shown in figure 4, capacitive accelerometer 200 includes substrate 12, one first semiconductor structure layer 202, and
Second semiconductor structure layer 16.First semiconductor structure layer 202 is arranged on the substrate 12, and it includes one first mass 204, extremely
Few one first supports pedestal 20, at least one first elastic component 206, at least one first comb capacitance group 24, at least one second to support
Pedestal 26, at least one second elastic component 208, and at least one second comb capacitance group 30, above-mentioned first supports pedestal 20, the first bullet
Property part 206, the first comb capacitance group 24, second support pedestal 26, the second elastic component 208, and the second comb capacitance group 30 is in Fig. 4
In show four.
In this embodiment, the first elastic component 206 has one first bending structure 210 and one first hierarchic structure 212, the
One bending structure 210 is connected to the first support pedestal 20, the first hierarchic structure 212 in the way of vertical first axle always back bending folding
It is connected between the first mass 204 and the first bending structure 210, and the second elastic component 208 is then have one second bending knot
The hierarchic structure 216 of structure 214 and 1 second, the second bending structure 214 is connected to the in the way of vertical second axially bends back and forth
Two support pedestal 26, the second hierarchic structure 216 to be connected between the first mass 204 and the second bending structure 214.Such one
Come, be connected to elastic bending structure using elastic hierarchic structure and replace known technology merely with elasticity bending with the design of mass
Structure is connected to the mode of the design for supporting pedestal and mass, and the first elastic component 206 and the second elastic component 208 are led the first half
The space of required occupancy just can accordingly be contracted by body structure sheaf 202, so that the first mass 204 can be in correspondence first
Extra extension is formed with a projecting block 218 on the position of the hierarchic structure 216 of hierarchic structure 212 and second, thereby, you can be not required to
In the case of the overall volume of the first semiconductor structure layer 202 of extra amplification, increase the overall weight of the first mass 204, enter
And enable the translational motion produced at the first axial direction and the second axially loaded of the first mass 204 more sensitive, to reach
To the purpose for lifting sense linear degree and sensitivity of the capacitive accelerometer 200 on the first axial direction and the second axial direction.
It is noted that the overbending direction of the first elastic component 206 and the second elastic component 208 can be not limited to above-mentioned enforcement
Example, the elasticity in design is bent to lift the first semiconductor structure layer 202 in elastic component.For example, first elastic component 206
First bending structure 210 can change and be connected to the first support pedestal 20 in the way of parallel first axle always back bending folding, and the second bullet
Property part 208 the second bending structure 214 be then can accordingly to change to be connected to the in the way of parallel second axially bends back and forth
Two support pedestal 26.
Finally, Fig. 5 is refer to, Fig. 5 is the capacitive accelerometer proposed according to a fourth embodiment of the present invention
300 top view, the person identical with the component numerals described in above-described embodiment of the component described in fourth embodiment represents its tool
There is similar function or structure, capacitive accelerometer 300 is to support pedestal, elasticity with above-described embodiment main difference part
The configuration of part and comb capacitance group, as design of the capacitive accelerometer 300 on sensing three axial acceleration, it can refer to
Above-described embodiment is analogized, therefore is repeated no more in this.As shown in figure 5, capacitive accelerometer 300 includes substrate 12,1 the first half
Conductor structure layer 302, and the second semiconductor structure layer 16.First semiconductor structure layer 302 is arranged on the substrate 12, and it includes
One mass 18, at least 2 first comb capacitance groups 304, at least one first support pedestal 306, at least one first elastic component 308,
At least 2 second comb capacitance groups 310, at least one second support pedestal 312, and at least one second elastic component 314, above-mentioned first
Comb capacitance group 304, first supports pedestal 306, the first elastic component 308, the second comb capacitance group 310, second to support pedestal
312, and the display four in Figure 5 of the second elastic component 314.
In this embodiment, the first comb capacitance group 304 is connected to the two of first axial direction of the correspondence of the first mass 18
On side, the first support pedestal 306 is arranged between the first comb capacitance group 304, and the second comb capacitance group 310 is then to connect respectively
Be connected on the first mass 18 correspondence the second axial direction both sides on, second support pedestal 312 be arranged on the second comb capacitance group 310 it
Between.In addition, the first elastic component 308 is to be connected to the first mass 18 and first in the way of parallel first axle always back bending folding
Between support group seat 306, and the second elastic component 314 be connected in the way of parallel second axially bends back and forth the first mass 18 and
Second supports between pedestal 312.
Consequently, it is possible to be arranged on the design between comb capacitance group using elastic component, it can make the first mass 18 first
Produced translational motion can be more sensitive when axial direction and the second axially loaded, and to reach capacitive accelerometer 300 is lifted
In the first sense linear degree axially and on the second axial direction and the purpose of sensitivity.
It is noted that above-mentioned mentioned elastic component bending number of times is different each other and comb capacitance group on pectination electricity
Hold the plate design different each other with the group number of fixed comb capacitance plate can interactive application in above-described embodiment so that institute of the present invention
The capacitive accelerometer of offer is more elastic in structure design.In addition, the second half mentioned in above-described embodiment
Conductor structure layer is omissible component, to simplify the structure design of the capacitive accelerometer of the present invention, in other words, this
Bright capacitive accelerometer can only be configured with the first semiconductor structure layer and only have the function of two axial accelerations of sensing.
The capacitance sensing structure design independently arranged using each sensitive axis compared to prior art, the present invention uses the
The two semiconductor structure layers accekeration of the 3rd axial direction (be used for sense) be located at the first semiconductor structure layer (be used for sensing first and
The accekeration of the second axial direction) side configuration, it is excessive with the overall dimensions for solving the problems, such as aforementioned accelerometer.Except this it
Outward, also using elastic component bending mode is changed, (as elastic component bends, number of times is different each other, change elastic component bending side for the present invention
To etc.), change the comb capacitance plate in comb capacitance group and the group number of fixed comb capacitance plate, or change comb capacitance group with
The design of the configuration of elastic component, further to reduce the overall volume of capacitive accelerometer or lift capacitance acceleration
Count in the first sense linear degree axially and on the second axial direction and sensitivity.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (7)
1. a kind of capacitive accelerometer, it is characterised in that the capacitive accelerometer includes：
One substrate；And
One first semiconductor structure layer, is arranged on the substrate, and first semiconductor structure layer includes：
One first mass；
At least one first supports pedestal, positioned at least side of first mass correspondence, one first axial direction；
One first elastic component, with one first bending structure and one first hierarchic structure, first bending structure is with correspondence institute
State the first axle mode that always back bending is rolled over and be connected to the first support pedestal, first hierarchic structure is connected to described first
Between mass and first bending structure；
At least one first comb capacitance group, is connected at least side of the first mass correspondence first axial direction；
At least one second supports pedestal, positioned at least side of first mass correspondence, one second axial direction；
One second elastic component, with one second bending structure and one second hierarchic structure, second bending structure is with correspondence institute
State the second mode for axially bending back and forth and be connected to the second support pedestal, second hierarchic structure is connected to described first
Between mass and second bending structure；And
At least one second comb capacitance group, is connected at least side of the first mass correspondence second axial direction；
Wherein described first axle is to perpendicular to the described second axial direction.
2. capacitive accelerometer as claimed in claim 1, it is characterised in that first mass is in correspondence described first
A projecting block is respectively arranged with the position of hierarchic structure and second hierarchic structure.
3. capacitive accelerometer as claimed in claim 1, it is characterised in that the substrate has an at least sensing electrode,
The capacitive accelerometer also includes：
One second semiconductor structure layer, is arranged on the substrate and positioned at the side of first semiconductor structure layer, described
Second semiconductor structure layer includes：
One second mass, it is axial along described first or described second axially there is a rotary shaft, for the sensing electrode
Produce a sense capacitance；And
At least one the 3rd supports pedestal, the rotary shaft is connected to, to make second mass asymmetrically floating in institute
State the top of sensing electrode；
Wherein when second mass is in three axially loaded, second mass is revolved centered on the rotary shaft
Turn, the described 3rd is axially perpendicular to the described first axial and described second axial direction.
4. capacitive accelerometer as claimed in claim 1, it is characterised in that first semiconductor structure layer includes 2 the
One comb capacitance group, includes per one first comb capacitance group：
Multiple comb capacitance plates, extend from first mass and are formed；And
Multiple fixed comb capacitance plates, fix and are parallel to each other and replace row on the substrate and with the plurality of comb capacitance plate
Row；
Comb capacitance plate in wherein described 2 first comb capacitance group is different each other with the group number of fixed comb capacitance plate.
5. capacitive accelerometer as claimed in claim 1, it is characterised in that first bending structure is with perpendicular to described
The first axle mode that always back bending is rolled over is connected to described first and supports between pedestal and first hierarchic structure, and described second is curved
Folded structure is connected to described second and supports pedestal and second ladder in the way of bending back and forth perpendicular to the described second axial direction
Between structure.
6. capacitive accelerometer as claimed in claim 1, it is characterised in that first bending structure is with parallel to described
The first axle mode that always back bending is rolled over is connected to described first and supports between pedestal and first hierarchic structure, and described second is curved
Folded structure is connected to described second in the way of axially bending back and forth parallel to described second and supports pedestal and second ladder
Between structure.
7. capacitive accelerometer as claimed in claim 1, it is characterised in that first semiconductor structure layer includes two institutes
State the first elastic component described in the first support pedestal and two, each first elastic component has first bending structure and described
First hierarchic structure, each first bending structure is connected to institute in the way of the correspondence first axle always back bending folding respectively
The first mass and corresponding the first support pedestal are stated, each first hierarchic structure is connected to first mass
Between block and corresponding first bending structure, the bending number of times of each first bending structure is different each other.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410561451.2A CN104316726B (en) | 2012-03-20 | 2012-03-20 | capacitive accelerometer |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210076677.4A CN103018486B (en) | 2011-09-26 | 2012-03-20 | Capacitive accelerometer |
| CN201410561451.2A CN104316726B (en) | 2012-03-20 | 2012-03-20 | capacitive accelerometer |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210076677.4A Division CN103018486B (en) | 2011-09-26 | 2012-03-20 | Capacitive accelerometer |
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| CN104316726A CN104316726A (en) | 2015-01-28 |
| CN104316726B true CN104316726B (en) | 2017-04-12 |
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| US7258011B2 (en) * | 2005-11-21 | 2007-08-21 | Invensense Inc. | Multiple axis accelerometer |
| CN101666813A (en) * | 2008-09-05 | 2010-03-10 | 财团法人工业技术研究院 | Multi-axis capacitive accelerometer |
| CN101738496A (en) * | 2008-11-18 | 2010-06-16 | 财团法人工业技术研究院 | multi-axis capacitive accelerometer |
| US7793544B2 (en) * | 2006-07-14 | 2010-09-14 | Stmicroelectronics S.R.L. | Microelectromechanical inertial sensor, in particular for free-fall detection applications |
| US7886601B2 (en) * | 2006-10-27 | 2011-02-15 | Stmicroelectronics S.R.L. | Microelectromechanical sensor having multiple full-scale and sensitivity values |
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| CN1425899A (en) * | 2001-12-03 | 2003-06-25 | 株式会社电装 | Semiconductor dynamic size sensor |
| US7258011B2 (en) * | 2005-11-21 | 2007-08-21 | Invensense Inc. | Multiple axis accelerometer |
| US7793544B2 (en) * | 2006-07-14 | 2010-09-14 | Stmicroelectronics S.R.L. | Microelectromechanical inertial sensor, in particular for free-fall detection applications |
| US7886601B2 (en) * | 2006-10-27 | 2011-02-15 | Stmicroelectronics S.R.L. | Microelectromechanical sensor having multiple full-scale and sensitivity values |
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