CN104298465B - 固态储存装置中的区块分组方法 - Google Patents
固态储存装置中的区块分组方法 Download PDFInfo
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- CN104298465B CN104298465B CN201310300535.6A CN201310300535A CN104298465B CN 104298465 B CN104298465 B CN 104298465B CN 201310300535 A CN201310300535 A CN 201310300535A CN 104298465 B CN104298465 B CN 104298465B
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
- G06F12/023—Free address space management
- G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
- G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/202—Non-volatile memory
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/72—Details relating to flash memory management
- G06F2212/7205—Cleaning, compaction, garbage collection, erase control
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- Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Memory System (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Read Only Memory (AREA)
Abstract
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Claims (8)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310300535.6A CN104298465B (zh) | 2013-07-17 | 2013-07-17 | 固态储存装置中的区块分组方法 |
US14/022,361 US9304903B2 (en) | 2013-07-17 | 2013-09-10 | Block grouping method for solid state drive |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310300535.6A CN104298465B (zh) | 2013-07-17 | 2013-07-17 | 固态储存装置中的区块分组方法 |
Publications (2)
Publication Number | Publication Date |
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CN104298465A CN104298465A (zh) | 2015-01-21 |
CN104298465B true CN104298465B (zh) | 2017-06-20 |
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Application Number | Title | Priority Date | Filing Date |
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CN201310300535.6A Active CN104298465B (zh) | 2013-07-17 | 2013-07-17 | 固态储存装置中的区块分组方法 |
Country Status (2)
Country | Link |
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US (1) | US9304903B2 (zh) |
CN (1) | CN104298465B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9740425B2 (en) * | 2014-12-16 | 2017-08-22 | Sandisk Technologies Llc | Tag-based wear leveling for a data storage device |
US9798475B2 (en) * | 2015-03-11 | 2017-10-24 | Toshiba Memory Corporation | Memory system and method of controlling nonvolatile memory |
TWI631565B (zh) * | 2015-12-09 | 2018-08-01 | 慧榮科技股份有限公司 | 快閃記憶體之廢料收集方法以及使用該方法的裝置 |
TWI573033B (zh) * | 2016-01-14 | 2017-03-01 | 群聯電子股份有限公司 | 資料搜尋方法、記憶體儲存裝置及記憶體控制電路單元 |
TWI604455B (zh) * | 2016-05-13 | 2017-11-01 | Silicon Motion Inc | 資料儲存裝置、記憶體控制器及其資料管理方法與資料區塊管理方法 |
TWI569159B (zh) * | 2016-05-31 | 2017-02-01 | 威聯通科技股份有限公司 | 避免多餘的資料複製的資料同步方法及裝置 |
CN106775474B (zh) * | 2016-12-16 | 2020-01-10 | 苏州浪潮智能科技有限公司 | 一种Nand Flash磨损均衡方法、装置及存储器 |
US10768829B2 (en) | 2017-02-15 | 2020-09-08 | Microsoft Technology Licensing, Llc | Opportunistic use of streams for storing data on a solid state device |
TWI642059B (zh) * | 2017-06-02 | 2018-11-21 | 群聯電子股份有限公司 | 記憶體管理方法、記憶體控制電路單元與記憶體儲存裝置 |
CN108563397B (zh) * | 2018-01-04 | 2021-08-24 | 威盛电子股份有限公司 | 存储装置以及数据保存方法 |
CN108089994B (zh) * | 2018-01-04 | 2021-06-01 | 威盛电子股份有限公司 | 存储装置以及数据保存方法 |
US10754549B2 (en) | 2018-02-15 | 2020-08-25 | Microsoft Technology Licensing, Llc | Append only streams for storing data on a solid state device |
US10929285B2 (en) * | 2018-02-27 | 2021-02-23 | Western Digital Technologies, Inc. | Storage system and method for generating a reverse map during a background operation and storing it in a host memory buffer |
KR20200022179A (ko) * | 2018-08-22 | 2020-03-03 | 에스케이하이닉스 주식회사 | 데이터 처리 시스템 및 데이터 처리 시스템의 동작 방법 |
KR20200033461A (ko) * | 2018-09-20 | 2020-03-30 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작방법 |
KR20200043054A (ko) * | 2018-10-17 | 2020-04-27 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작방법 |
CN111813326B (zh) * | 2019-04-12 | 2024-04-19 | 建兴储存科技(广州)有限公司 | 具多数据流写入的固态存储装置及其相关写入方法 |
US11507402B2 (en) | 2019-04-15 | 2022-11-22 | Microsoft Technology Licensing, Llc | Virtualized append-only storage device |
US20200409601A1 (en) * | 2019-06-28 | 2020-12-31 | Western Digital Technologies, Inc. | Hold of Write Commands in Zoned Namespaces |
US11467980B2 (en) * | 2020-01-10 | 2022-10-11 | Micron Technology, Inc. | Performing a media management operation based on a sequence identifier for a block |
KR20220030090A (ko) * | 2020-09-02 | 2022-03-10 | 에스케이하이닉스 주식회사 | 저장 장치 및 그 동작 방법 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101339808A (zh) * | 2008-07-28 | 2009-01-07 | 华中科技大学 | 存储块的擦除方法及装置 |
CN101369252A (zh) * | 2008-09-16 | 2009-02-18 | 浙江大学 | 基于nand闪存文件系统中静态数据损耗均衡的方法 |
TW201005741A (en) * | 2008-07-28 | 2010-02-01 | Hynix Semiconductor Inc | Solid state storage system that evenly allocates data writing/erasing operations among blocks and method of controlling same |
CN202472635U (zh) * | 2012-03-23 | 2012-10-03 | 山东华芯半导体有限公司 | 闪存磨损均衡装置 |
CN102789423A (zh) * | 2012-07-11 | 2012-11-21 | 山东华芯半导体有限公司 | 四池闪存磨损均衡方法 |
Family Cites Families (4)
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US8843691B2 (en) * | 2008-06-25 | 2014-09-23 | Stec, Inc. | Prioritized erasure of data blocks in a flash storage device |
US20100174845A1 (en) * | 2009-01-05 | 2010-07-08 | Sergey Anatolievich Gorobets | Wear Leveling for Non-Volatile Memories: Maintenance of Experience Count and Passive Techniques |
KR20120028581A (ko) * | 2010-09-15 | 2012-03-23 | 삼성전자주식회사 | 비휘발성 메모리 장치, 이의 동작 방법, 및 이를 포함하는 장치들 |
KR20140096875A (ko) * | 2013-01-29 | 2014-08-06 | 삼성전자주식회사 | 메모리 시스템의 및 그것의 블록 관리 방법 |
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2013
- 2013-07-17 CN CN201310300535.6A patent/CN104298465B/zh active Active
- 2013-09-10 US US14/022,361 patent/US9304903B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101339808A (zh) * | 2008-07-28 | 2009-01-07 | 华中科技大学 | 存储块的擦除方法及装置 |
TW201005741A (en) * | 2008-07-28 | 2010-02-01 | Hynix Semiconductor Inc | Solid state storage system that evenly allocates data writing/erasing operations among blocks and method of controlling same |
CN101369252A (zh) * | 2008-09-16 | 2009-02-18 | 浙江大学 | 基于nand闪存文件系统中静态数据损耗均衡的方法 |
CN202472635U (zh) * | 2012-03-23 | 2012-10-03 | 山东华芯半导体有限公司 | 闪存磨损均衡装置 |
CN102789423A (zh) * | 2012-07-11 | 2012-11-21 | 山东华芯半导体有限公司 | 四池闪存磨损均衡方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104298465A (zh) | 2015-01-21 |
US9304903B2 (en) | 2016-04-05 |
US20150026389A1 (en) | 2015-01-22 |
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Effective date of registration: 20170522 Address after: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Applicant after: Lite-On Electronic (Guangzhou) Co., Ltd. Applicant after: Lite-On Technology Corporation Address before: Ruiguang road Taiwan Taipei City Neihu district China No. 392 22 floor Applicant before: Lite-On Technology Corporation |
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Effective date of registration: 20191231 Address after: Room 302, factory a, No.8 Guangbao Road, Science City, Huangpu District, Guangzhou City, Guangdong Province Patentee after: Jianxing storage technology (Guangzhou) Co., Ltd Address before: No. 25 West Road, Science City, Guangzhou high tech Industrial Development Zone, Guangdong, China Co-patentee before: Lite-On Technology Corporation Patentee before: Guangbao Electronics (Guangzhou) Co., Ltd. |
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