CN104297817B - A kind of have laser high reflectance, the film system of infrared light high-transmission rate and preparation method - Google Patents

A kind of have laser high reflectance, the film system of infrared light high-transmission rate and preparation method Download PDF

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CN104297817B
CN104297817B CN201310626318.6A CN201310626318A CN104297817B CN 104297817 B CN104297817 B CN 104297817B CN 201310626318 A CN201310626318 A CN 201310626318A CN 104297817 B CN104297817 B CN 104297817B
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geometric thickness
film system
infrared light
tunic
coating materials
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CN104297817A (en
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刘凤玉
王一坚
吴晓鸣
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Luoyang Institute of Electro Optical Equipment AVIC
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/11—Anti-reflection coatings
    • G02B1/113—Anti-reflection coatings using inorganic layer materials only
    • G02B1/115—Multilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C23C14/0629—Sulfides, selenides or tellurides of zinc, cadmium or mercury
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0694—Halides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/26—Vacuum evaporation by resistance or inductive heating of the source
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
    • G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation

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  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Metallurgy (AREA)
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  • General Physics & Mathematics (AREA)
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Abstract

The invention discloses and a kind of there is laser high reflectance, the film system of infrared light high-transmission rate and preparation method, belong to optical thin film manufacturing technology field.This film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9 ~ 11nm, the geometric thickness of the 2nd tunic layer is 18 ~ 20nm, the geometric thickness of the 24th tunic layer is 1300 ~ 1350nm, the geometric thickness of all the other all odd number retes is respectively 120 ~ 130nm, and the geometric thickness of all the other even number retes is respectively 188 ~ 198nm; Have when 45° angle is incident, 98% is greater than to 1.064 μm of laser reflectivities, the optical characteristics that 7.5 μm ~ 10 μm of IR transmittances are greater than 95%.The optical element being coated with this film system can be used for laser, infrared light path optics instrument altogether, and have the effect be separated by two wave band light of incidence, to improving, optical instrument performance, the weight reducing instrument and volume are significant.

Description

A kind of have laser high reflectance, the film system of infrared light high-transmission rate and preparation method
Technical field
The present invention is specifically related to a kind of film system with laser high reflectance, infrared light high-transmission rate, and the preparation method of this film system, belongs to optical thin film manufacturing technology field.
Background technology
Along with the development of science and technology, product gradually adopts the optical system of how photosynthetic to reduce volume and weight, and a how photosynthetic optical system rear end also needs many light to be separated, to realize reception to various light and detection.Laser high reflectance, infrared light high-transmission rate rete are the optical element rete of optical system being applied to laser, infrared light two photosynthetic, and it has effect laser and infrared light separated.The laser reflectivity and the IR transmittance that how to improve rete are further the current emphasis studied.
Summary of the invention
The object of this invention is to provide a kind of film system with laser high reflectance, infrared light high-transmission rate.
Meanwhile, the present invention also provides a kind of preparation method of film system with laser high reflectance, infrared light high-transmission rate.
In order to realize above object, the technical solution adopted in the present invention is:
Have a film system for laser high reflectance, infrared light high-transmission rate, this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9 ~ 11nm, the geometric thickness of the 2nd tunic layer is 18 ~ 20nm, the geometric thickness of the 24th tunic layer is 1300 ~ 1350nm, the geometric thickness of all the other all odd number retes is respectively 120 ~ 130nm, and the geometric thickness of all the other even number retes is respectively 188 ~ 198nm.
Preferably, a kind of film system with laser high reflectance, infrared light high-transmission rate, this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9.8nm, the geometric thickness of the 2nd tunic layer is 19.5nm, the geometric thickness of the 24th tunic layer is 1332nm, and the geometric thickness of all the other all odd number retes is respectively 123nm, and the geometric thickness of all the other even number retes is respectively 192.5nm.
There is the preparation method of film system for laser high reflectance, infrared light high-transmission rate, comprise the following steps:
(1) be coated with the 1st tunic layer: get ZnS coating materials and carry out evaporation by thermal resistance evaporation source, vacuum tightness is 8 × 10 -4~ 2 × 10 -3pa, evaporation rate is 0.8nm/S ~ 0.9nm/S;
(2) the 2nd tunic layer is coated with: get YbF 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 8 × 10 -4~ 2 × 10 -3pa, evaporation rate is 0.7nm/S ~ 0.8nm/S;
(3) repeat step (1), (2), be alternately coated with 3rd ~ 25 tunic layers;
(4) the complete temperature being cooled to vacuum chamber is coated with lower than 80 DEG C.
Before step (1) is coated with the 1st tunic layer, need the plated film substrate of cleaning and toasting part to be plated.Cleaning adopts ultrasound wave and/or detersive.The concrete grammar of baking is: part to be plated is placed in high vacuum coating equipment, is evacuated to 8 × 10 -3~ 2 × 10 -2pa, is incubated 1 ~ 2 hour at 140 ~ 160 DEG C.
The plated film substrate of described part to be plated is zinc sulphide material.
Beneficial effect of the present invention:
The present invention is basis with Cycle-symmetry film, adopt the film system that part tunic optimization is designed for laser, infrared light is total to path optics element, this film cording has when 45° angle is incident, 98% is greater than to 1.064 μm of laser reflectivities, the optical characteristics that 7.5 μm ~ 10 μm of IR transmittances are greater than 95%.The optical element being coated with this film system can be used for laser, infrared light path optics instrument altogether, and have the effect be separated by two wave band light of incidence, to improving, optical instrument performance, the weight reducing instrument and volume are significant.
The ultimate principle that the present invention is coated with rete is: in the high vacuum atmosphere of vacuum chamber, and the thermal resistance evaporation source of low-voltage and high-current is by plated coating materials heat fused to evaporating state, and the coating materials molecule evaporated splashes towards all directions in vacuum chamber.When coating materials molecule is splashed to plated piece surface, Yin Wendu reduces and adheres to.The coating materials molecule of continuous attachment forms film gradually, and along with the increase of deposition time, rete constantly thickeies, and stops evaporation when reaching required desired film thickness.The thickness of rete is controlled by quartz crystal controller.In coating process, plated part rotates with fixture, consistent to ensure each part thickness of part.Adopt the rete firmness that is coated with of the inventive method good, rete and substrate caking power strong.
Embodiment
Following embodiment is only described in further detail the present invention, but does not form any limitation of the invention.
Embodiment 1
Have the film system of laser high reflectance, infrared light high-transmission rate in the present embodiment, this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9.8nm, the geometric thickness of the 2nd tunic layer is 19.5nm, the geometric thickness of the 24th tunic layer is 1332nm, and the geometric thickness of all the other all odd number retes is respectively 123nm, and the geometric thickness of all the other even number retes is respectively 192.5nm.
The equipment adopted in film system preparation process comprises fine pumping system, two groups of thermal resistance evaporation sources, quartz crystal film thickness monitoring device, ion beam-assisted device, heated baking device, the adjustable workholders of rotating speed etc.
There is in the present embodiment the preparation method of film system of laser high reflectance, infrared light high-transmission rate, comprise the following steps:
1, preliminary work
(1) clean vacuum room, coating clamp, evaporation source baffle plate and ion gun etc.;
(2) by ZnS, YbF 3coating materials is respectively charged in molybdenum evaporation boat;
(3) quartz crystal slice is changed;
2, clean part
(1) test piece is the multispectral zinc sulfide of φ 50 × 3, with the multiple new parts surface of diamond burnishing powder;
(2) alcohol ether mixed liquor is dipped in by clean for piece surface clean with absorbent cotton;
(3) Special tooling clamp be installed and load as quickly as possible in vacuum chamber;
3, rete is coated with
Close door for vacuum chamber, start plating run and start plated film, concrete steps are as follows:
(1) bleed, toast substrate: be positioned in vacuum chamber by part to be plated, being evacuated to vacuum tightness is 2 × 10 -2pa, adds substrate to 150 DEG C, and heat-insulation pressure keeping 1 hour is restarted ion gun and carried out Ions Bombardment to substrate, and the time is 5min;
(2) be coated with the 1st tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 1 × 10 -3pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 9.8nm;
(3) the 2nd tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 1 × 10 -3pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 19.5nm;
(4) repeat step (1), (2), be alternately coated with 3rd ~ 23 tunic layers, wherein the geometric thickness of odd number rete is 123nm, and the geometric thickness of even number rete is 192.5nm;
(5) the 24th tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 1332nm;
(6) be coated with the 25th tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.9nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 9.8nm;
(7) the complete temperature being cooled to vacuum chamber is coated with lower than 80 DEG C.
Embodiment 2
Have the film system of laser high reflectance, infrared light high-transmission rate in the present embodiment, this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; The geometric thickness of the 1st tunic layer is 9nm, the geometric thickness of the 2nd tunic layer is 20nm, the geometric thickness of the 24th tunic layer is 1300nm, the geometric thickness of the 25th tunic layer is respectively 11nm, the geometric thickness of all the other all odd number retes is respectively 120nm, and the geometric thickness of all the other even number retes is respectively 198nm.
The equipment adopted in film system preparation process comprises fine pumping system, two groups of thermal resistance evaporation sources, quartz crystal film thickness monitoring device, ion beam-assisted device, heated baking device, the adjustable workholders of rotating speed etc.
There is in the present embodiment the preparation method of film system of laser high reflectance, infrared light high-transmission rate, comprise the following steps:
1, preliminary work
(1) clean vacuum room, coating clamp, evaporation source baffle plate and ion gun etc.;
(2) by ZnS, YbF 3coating materials is respectively charged in molybdenum evaporation boat;
(3) quartz crystal slice is changed;
2, clean part
(1) test piece is the multispectral zinc sulfide of φ 50 × 3, with the multiple new parts surface of diamond burnishing powder;
(2) alcohol ether mixed liquor is dipped in by clean for piece surface clean with absorbent cotton;
(3) Special tooling clamp be installed and load as quickly as possible in vacuum chamber;
3, rete is coated with
Close door for vacuum chamber, start plating run and start plated film, concrete steps are as follows:
(1) bleed, toast substrate: be positioned in vacuum chamber by part to be plated, being evacuated to vacuum tightness is 1.6 × 10 -2pa, adds substrate to 140 DEG C, and heat-insulation pressure keeping 2 hours is restarted ion gun and carried out Ions Bombardment to substrate, and the time is 5min;
(2) be coated with the 1st tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, geometric thickness 9nm;
(3) the 2nd tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 20nm;
(4) repeat step (1), (2), be alternately coated with 3rd ~ 23 tunic layers, wherein the geometric thickness of odd number rete is 120nm, and the geometric thickness of even number rete is 198nm;
(5) the 24th tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 8 × 10 -4pa, evaporation rate is 0.7nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 1300nm;
(6) be coated with the 25th tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 8 × 10 -4pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 11nm;
(7) the complete temperature being cooled to vacuum chamber is coated with lower than 80 DEG C.
Embodiment 3
Have the film system of laser high reflectance, infrared light high-transmission rate in the present embodiment, this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; The geometric thickness of the 1st tunic layer is 11nm, the geometric thickness of the 2nd tunic layer is 18nm, the geometric thickness of the 24th tunic layer is 1350nm, the geometric thickness of the 25th tunic layer is respectively 9nm, the geometric thickness of all the other all odd number retes is respectively 130nm, and the geometric thickness of all the other even number retes is respectively 188nm.
The equipment adopted in film system preparation process comprises fine pumping system, two groups of thermal resistance evaporation sources, quartz crystal film thickness monitoring device, ion beam-assisted device, heated baking device, the adjustable workholders of rotating speed etc.
There is in the present embodiment the preparation method of film system of laser high reflectance, infrared light high-transmission rate, comprise the following steps:
1, preliminary work
(1) clean vacuum room, coating clamp, evaporation source baffle plate and ion gun etc.;
(2) by ZnS, YbF 3coating materials is respectively charged in molybdenum evaporation boat;
(3) quartz crystal slice is changed;
2, clean part
(1) test piece is the multispectral zinc sulfide of φ 50 × 3, with the multiple new parts surface of diamond burnishing powder;
(2) alcohol ether mixed liquor is dipped in by clean for piece surface clean with absorbent cotton;
(3) Special tooling clamp be installed and load as quickly as possible in vacuum chamber;
3, rete is coated with
Close door for vacuum chamber, start plating run and start plated film, concrete steps are as follows:
(1) bleed, toast substrate: be positioned in vacuum chamber by part to be plated, being evacuated to vacuum tightness is 2 × 10 -3pa, adds substrate to 150 DEG C, and heat-insulation pressure keeping 2 hours is restarted ion gun and carried out Ions Bombardment to substrate, and the time is 5min;
(2) be coated with the 1st tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 1 × 10 -3pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 11nm;
(3) the 2nd tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 1 × 10 -3pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 18nm;
(4) repeat step (1), (2), be alternately coated with 3rd ~ 23 tunic layers, wherein the geometric thickness of odd number rete is 130nm, and the geometric thickness of even number rete is 188nm;
(5) the 24th tunic layer: YbF is coated with 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.8nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 1350nm;
(6) be coated with the 25th tunic layer: ZnS coating materials carries out evaporation by thermal resistance evaporation source, during evaporation, vacuum tightness is 9 × 10 -4pa, evaporation rate is 0.9nm/S, and thicknesses of layers is controlled by quartz crystal film thickness measurement device, and geometric thickness is 9nm;
(7) the complete temperature being cooled to vacuum chamber is coated with lower than 80 DEG C.
Test example
The film system that Example 1 ~ 3 is coated with carries out the mensuration of optical characteristics index, and measurement result refers to following table 1.
Table 1 embodiment 1 ~ 3 is coated with the optical characteristics index of film system
As can be seen from Table 1, when the film that embodiment 1 ~ 3 is coated with ties up to 45° angle incidence, be greater than 98% to 1.064 μm of laser reflectivities, 7.5 μm ~ 10 μm IR transmittances are greater than 95%, meet the dichroism requirement of laser, the infrared light altogether beam splitter of path optics instrument completely.

Claims (7)

1. there is a film system for laser high reflectance, infrared light high-transmission rate, it is characterized in that: this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9 ~ 11nm, the geometric thickness of the 2nd tunic layer is 18 ~ 20nm, the geometric thickness of the 24th tunic layer is 1300 ~ 1350nm, the geometric thickness of all the other all odd number retes is respectively 120 ~ 130nm, and the geometric thickness of all the other even number retes is respectively 188 ~ 198nm; Described optical maser wavelength is 1.064 μm, and infrared light wavelength is 7.5 ~ 10 μm.
2. the film system with laser high reflectance, infrared light high-transmission rate according to claim 1, is characterized in that: this film system is made up of 1st ~ 25 tunic layers from the inside to surface successively, and the coating materials of odd number rete is ZnS, and the coating materials of even number rete is YbF 3; 1st layer, the geometric thickness of the 25th tunic layer is respectively 9.8nm, the geometric thickness of the 2nd tunic layer is 19.5nm, the geometric thickness of the 24th tunic layer is 1332nm, and the geometric thickness of all the other all odd number retes is respectively 123nm, and the geometric thickness of all the other even number retes is respectively 192.5nm.
3. there is the preparation method of film system for laser high reflectance, infrared light high-transmission rate as claimed in claim 1 or 2, it is characterized in that: comprise the following steps:
(1) be coated with the 1st tunic layer: get ZnS coating materials and carry out evaporation by thermal resistance evaporation source, vacuum tightness is 8 × 10 -4~ 2 × 10 -3pa, evaporation rate is 0.8nm/S ~ 0.9nm/S;
(2) the 2nd tunic layer is coated with: get YbF 3coating materials carries out evaporation by thermal resistance evaporation source, and vacuum tightness is 8 × 10 -4~ 2 × 10 -3pa, evaporation rate is 0.7nm/S ~ 0.8nm/S;
(3) repeat step (1), (2), be alternately coated with 3rd ~ 25 tunic layers;
(4) the complete temperature being cooled to vacuum chamber is coated with lower than 80 DEG C.
4. the preparation method of film system with laser high reflectance, infrared light high-transmission rate according to claim 3, is characterized in that: before step (1) is coated with the 1st tunic layer, cleans the plated film substrate of part to be plated and toast.
5. the preparation method of film system with laser high reflectance, infrared light high-transmission rate according to claim 4, is characterized in that: described cleaning adopts ultrasound wave and/or detersive.
6. the preparation method of film system with laser high reflectance, infrared light high-transmission rate according to claim 4, is characterized in that: the concrete grammar of described baking is: part to be plated is placed in high vacuum coating equipment, is evacuated to 8 × 10 -3~ 2 × 10 -2pa, is incubated 1 ~ 2 hour at 140 ~ 160 DEG C.
7. the preparation method of film system with laser high reflectance, infrared light high-transmission rate according to claim 4, is characterized in that: the plated film substrate of described part to be plated is zinc sulphide material.
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