CN104282844A - Organic light emitting structure, manufacturing method thereof and organic light emitting assembly - Google Patents
Organic light emitting structure, manufacturing method thereof and organic light emitting assembly Download PDFInfo
- Publication number
- CN104282844A CN104282844A CN201310285545.7A CN201310285545A CN104282844A CN 104282844 A CN104282844 A CN 104282844A CN 201310285545 A CN201310285545 A CN 201310285545A CN 104282844 A CN104282844 A CN 104282844A
- Authority
- CN
- China
- Prior art keywords
- organic
- layer
- organic light
- par
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/813—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light emitting structure and a manufacturing method of the organic light emitting structure. The manufacturing method includes the steps that a flat layer is formed on a base plate, wherein the flat layer comprises a negative photoresist material; the exposure technology is carried out on the negative photoresist material through a mask; the development technology is carried out on the negative photoresist material on which the exposure technology is carried out, so that a photoresist pattern is obtained, wherein the photoresist pattern comprises a flat part and a protruding part located on the periphery of the flat part, and the protruding part is provided with a smooth surface; reflecting electrodes and an organic light emitting layer are formed on the flat part, wherein the reflecting electrodes are located on the surfaces of the opposite sides of the protruding part. The organic light emitting structure can effectively gather light rays emitted by an OLED, the light emitting efficiency of the OLED is improved within the same pixel area, and various pixel light emitting sources are protected against color mixing.
Description
Technical field
The present invention relates to OLED(Organic Light-Emitting Diode, Organic Light Emitting Diode) luminescence technology, and in particular to a kind of organic light-emitting structure and manufacture method thereof and organic luminescent assembly.
Background technology
OLED is self luminous Display Technique, the OLED of upper luminous (Top emission) at present, need increase by an organic planarization layer above data wire, make OLED structure in subsequent technique, keep thickness homogeneous, reduce the luminance difference that uneven thickness causes.
Current oled panel needs design circuit to compensate drive TFT (Thin Film Transistor, Thin Film Transistor (TFT)) threshold voltage, add the demand of OLED height PPI (Pixel Per Inch), the aperture opening ratio of OLED can be affected, reduce the actual light-emitting area of OLED, indirectly cause brightness to reduce.Therefore how to have in limited elemental area, increase the luminosity of OLED, for existing OLED design faces and the problem that need solve immediately.
OLED ray structure of the prior art is shown in Figure 1.Anode in this OLED ray structure has a reflector, reflects for the light produced organic luminous layer.The light that this OLED ray structure produces as shown in Figure 1, because of the utilizing emitted light scattering of part, is easy to adjacent pixel light source and produces colour mixture, causes the impure and angle of squint colour cast of colourity.And some light do not penetrate from effective light-emitting zone and direction as the light of nearly horizontal direction, cause the whole lighting efficiency of this OLED ray structure not high.
Summary of the invention
In view of the problems referred to above of prior art, the invention provides a kind of organic light-emitting structure and manufacture method thereof and organic luminescent assembly.
The invention discloses a kind of method manufacturing organic light-emitting structure, comprising:
Substrate forms planarization layer, and described planarization layer comprises negative photoresist material;
Mask is utilized to perform exposure technology to described negative photoresist material;
Perform developing process to the described negative photoresist material after exposure technology, thus obtain photoresist pattern, wherein said photoresist pattern comprises par and is positioned at the lug boss of par surrounding, and described lug boss has smooth surface; And
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the opposite flank of described lug boss.
Wherein, this mask comprises: photic zone and semi-permeable layer; Wherein, the region only covered by this light-transmissive film is this lug boss, and the region simultaneously covered by light-transmissive film and semi-permeable layer is this par.
Wherein, this mask also comprises light shielding layer.
Wherein, the region that this light shielding layer covers is the edge of this organic layer.
Wherein, the region that this light shielding layer covers is the region that on this organic layer, data wire connects with the anode of Organic Light Emitting Diode, and/or this organic layer needs the region of coated glass material.
Wherein, physical vapour deposition (PVD) or chemical vapor deposition method is utilized to be made on this par and lug boss by this this reflecting electrode.
Wherein, the slope angle of jut is 25 degree to 50 degree.
Wherein, this mask is grayscale mask.
Wherein, this mask is intermediate tone mask.
Wherein, this mask is half-tone phase shift mask.
The invention also discloses a kind of organic light-emitting structure, at least comprise: organic layer and the Organic Light Emitting Diode module be positioned on organic layer;
This organic layer comprises par and is positioned at the lug boss of par surrounding;
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the opposite flank of described lug boss.
Wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
Wherein, this reflector uses the metals such as Al, Ag or Ni or its alloy to make the level and smooth plane with high reverse--bias performance.
The invention also discloses a kind of organic luminescent assembly, comprising: organic layer and the Organic Light Emitting Diode module be positioned on organic layer;
This organic layer comprises par and is positioned at the lug boss of par surrounding;
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the opposite flank of described lug boss.
Wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
Organic luminescent device of the present invention, the light that can send OLED carries out in active set, in identical elemental area, when without the need to increasing cost and technique, adds the luminous efficiency of OLED, it also avoid between each pixel light emission source simultaneously and produces colour mixture.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the OLED ray structure of prior art.
Fig. 2 is the schematic diagram of the organic light-emitting structure of one embodiment of the invention.
Fig. 3 is the schematic diagram of the making organic layer 1 of one embodiment of the invention.
Fig. 4 is the schematic diagram of the OLED assembly of one embodiment of the invention.
Fig. 5 is the photo of the gradual sloped portion 12 of one embodiment of the invention.
Embodiment
More fully example embodiment is described referring now to accompanying drawing.But example embodiment can be implemented in a variety of forms, and should not be understood to be limited to execution mode set forth herein; On the contrary, these execution modes are provided to make the disclosure comprehensively with complete, and the design of example embodiment will be conveyed to those skilled in the art all sidedly.In the drawings, in order to clear, exaggerate the thickness of region and layer.Reference numeral identical in the drawings represents same or similar structure, thus will omit their detailed description.
In addition, described feature, structure or characteristic can be combined in one or more embodiment in any suitable manner.In the following description, provide many details thus provide fully understanding embodiment of the present disclosure.But, one of skill in the art will appreciate that and can put into practice technical scheme of the present disclosure and not have in described specific detail one or more, or other method, constituent element, material etc. can be adopted.In other cases, known features, material or operation is not shown specifically or describes to avoid fuzzy each side of the present disclosure.
Embodiments provide a kind of organic luminescent device and manufacture method thereof of high-luminous-efficiency, shown in Figure 2 is the structural representation of this organic luminescent device, and it at least comprises organic layer 1 and OLED module 2.This OLED module 2 at least comprises a reflector 21, in addition, OLED module 2 its also comprise luminescent layer, cathode layer, anode layer etc.; This organic layer 1 is looped around around this OLED module 2, and upper end open, form the shape of projection around; This organic layer 1 comprises a 11(par, luminous zone) and a gradual sloped portion 12(jut), this luminous zone 11 is positioned at the zone line of organic layer 1, and the luminescent layer of OLED module 2 is placed on this luminous zone 11; Gradual sloped portion 12 is centered around four sides all around of this luminous zone 11, and Fig. 2 is the sectional elevation of organic light-emitting structure, and its longitudinal section (not shown) is similar with sectional elevation.The value of the slope angle θ of gradual sloped portion 12 can be between 25 degree to 50 degree.On the luminous zone 11 that reflector 21 is arranged at organic layer 1 and gradual sloped portion 12, luminous zone 11 is formed reflector (as reflecting electrode) and organic luminous layer, and wherein this reflector is also positioned on the relative side surface of gradual sloped portion 12.As shown in Figure 2, the base section 21a in reflector 21 is located on the luminous zone 11 of organic layer 1, and peripheral part 21b in reflector 21 establishes according to this gradual sloped portion 12, forms an inclined plane, makes reflector 21 form concave structure in organic layer 1.
As shown in Figure 2, the light that OLED module 2 sends, reflects through the reflector 21 of bottom and surrounding, can scattered light in active set, increase light source utilization rate, and also can avoid the light that sends towards periphery pixel light source disperse, avoid producing colour mixture with adjacent pixel light source.
The manufacture craft of the organic luminescent device of the embodiment of the present invention comprises:
1, as shown in Figure 3, at organic layer 1 ' (or planarization layer) top cover one mask 3 of negative photoresist material.(label 1 ' in Fig. 3 represents the organic layer without photoetch process, and label 1 represents the organic layer after photoetch process).Mask 3 can cover organic layer 1 ', and it comprises photic zone 31, semi-permeable layer 32 and light shielding layer 33.On organic layer 1, be the edge of organic layer 1 ' by the region that light shielding layer 33 covers, only corresponded to the region for forming gentle slope by the region that photic zone 21 covers, other regions are covered by light-transmissive film 31 and semi-permeable layer 32 simultaneously.In the present embodiment, this mask 3 can be grayscale mask, intermediate tone mask or half-tone phase shift mask.
Composition graphs 3 and above-mentioned introduce known, light shielding layer forms light shield district A3 33 times, and only by formation transparent area, the region A1 that photic zone 31 covers, the region simultaneously under light-transmissive film 31 and semi-permeable layer 32 is semi-opaque region A2.
2, above mask 3, carry out illumination, then will there is cross-linking reaction in the negative photoresist under the A1 of transparent area, become the cross-linked polymer of the higher molecular weight that can not be dissolved by the developing after exposure; And the intensity of negative photoresist generation cross-linking reaction under the A2 of semi-opaque region is less than the negative photoresist under the A1 of transparent area, substantially cross-linking reaction does not occur for the negative photoresist under light shield district A3.
3, this organic layer 1 of developing solution dissolution is used, negative photoresist under the A1 of transparent area only has only a few part to be dissolved, form gradual sloped portion 12, and negative photoresist under the A2 of semi-opaque region comparatively many parts dissolved, form the flat being thinner than former organic layer thickness; And the negative photoresist under light shield district A3 substantially all can be dissolved.Wherein, this case is only described for the edge removing organic layer 1 ' that needs shown in Fig. 3, and the negative photoresist that this case does not limit organic layer 1 ' edge needs to remove.This organic layer 1 ' needs the part removed determine according to specific needs, the region that the part removed as needed also can connect with anode for data wire in pixel, or need the region of coated glass material.For the region needing to remove, to make above it cover by light shielding layer 33.
By above-mentioned manufacture craft, the organic layer 1 with luminous zone 11 and gradual sloped portion 12 as shown in Fig. 3 bottom just can be formed.
4, after producing above-mentioned organic layer 1, reflector 21 is arranged according to the luminous zone 11 of organic layer 1 and gradual sloped portion 12, form the organic light-emitting structure shown in Fig. 2.
This reflector 21 can utilize PVD(Physical Vapor Deposition, physical vapour deposition (PVD)) or the technique of CVD (Chemical Vapor Deposition, chemical vapour deposition (CVD)), be made on this luminous zone 11 and gradual sloped portion 12.
Wherein, this reflector 21 can be arranged in the anode of OLED, if this reflector 21 can be the metal level that one in anode layer has high reflecting rate.This metal level can use the metals such as Al, Ag or Ni or its alloy to make the level and smooth plane with high reverse--bias performance.
In addition, also can be only that the base section 21a in reflector 21 is arranged in anode, and peripheral part 21b be an independently structure, namely in the surrounding of anode layer, the plane with high reverse--bias performance be independently set and reflects with the light sent OLED module.But this kind of mode need increase light shield quantity and production process, adopt which kind of structure can determine according to real needs.
Anode layer is comprised to the OLED module in reflector 21, its cathode layer is hyaline layer, between cathode layer and anode layer, press from both sides organic luminous layer, forms the structure as sandwich.Between cathode layer and anode layer supply power to appropriate voltage time, positron-electron meets in this organic luminous layer, will emit beam, and the light sent goes out from negative electrode hyaline layer transmission after the reflection in anode reflector.
The example embodiment of OLED assembly as shown in Figure 4, in the present embodiment, the transistor T for OLED assembly can be arranged on the below in anode reflector.
The above embodiment of the present invention comprises reflector 21 with anode layer, and cathode layer is hyaline layer is that example is described.In addition, those skilled in the art also can expect, this OLED module also can comprise the OLED in reflector 21 for cathode layer, now, cathode layer is arranged on organic layer, be organic luminous layer and anode layer on cathode layer, anode layer is transparent structure, and organic luminous layer is between negative electrode and anode.It should be noted that, make the OLED module of this kind of structure, need to increase the quantity of light shield and relevant technique, otherwise the OLED module 2 with concave structure shown in more difficult formation Fig. 2.Therefore, adopt cathode layer to comprise the OLED module 2 in reflector 21, the manufacture craft needing extra consideration to be correlated with and cost.
Introduce known in conjunction with above-mentioned, in this OLED module 2, the base section 21a in reflector 21 and peripheral part 21b forms the output optical zone of this OLED module 2 jointly, and the light that OLED module 2 sends all penetrates from this output optical zone.
In this organic light-emitting structure, according to concrete application demand, the gradient of gradual sloped portion 12 can be regulated.Concrete, regulate the gradient on gentle slope, the correlative factor considered is needed to comprise exposure (comprising light energy, spacing and time), the etching intensity of developer solution (comprises developer solution kind, etching period) and the material of organic layer and thickness, consider above-mentioned three kinds of factors, carry out the gradient that expection just can be made in gentle slope by optimized collocation.
As intensity of illumination is stronger, then the light energy of semi-opaque region A2 is also larger, and its cross-linking reaction produced is corresponding strong, after using developing solution dissolution, the thickness that semi-opaque region A2 reduces is less, and the height on the gentle slope of relative formation is lower, then the gradient on gentle slope is corresponding lower; In like manner, reduce intensity of illumination, then can make the corresponding increase of the gradient on gentle slope.In addition, the material of developer solution etching intensity and organic layer, all can affect the etching degree of semi-opaque region A2, and finally affects the gradient on gentle slope, therefore needs to consider three kinds of factors, and after carrying out etch processes to make organic layer, the gradient on gentle slope can conform to expection.
Regulate the height of gradual sloped portion 12 can regulate the transmitting light from side surface degree of OLED module 2; And regulate the gradient of gradual sloped portion 12 that offside reflection layer just can be regulated in the angle of bottom reflection layer, regulate the gradient of output optical zone thus.
As shown in Figure 5, in the present case, the inclined degree of gradual sloped portion 12 is less, and the gradient is more slow, and the shape on gentle slope is more approximately arc; Inclined degree is larger, and the gradient is steeper, and the shape on gentle slope is more approximately the plane of inclination, and the gradient of the gradual sloped portion 12 in this case refers to and is the tangent value of the slope angle of gradual sloped portion 12 by the ratio of domatic vertical height and horizontal range.
For improving the reflection efficiency in reflector 21 in this case, this reflector 21 suitable design becomes the round table-like structure of opening as shown in Figure 2, it is also contemplated that reflector 21 also according to the specific performance of OLED module 2, can be designed to other shape by this case.
Organic luminescent device of the present invention, the light that can send OLED carries out in active set, in identical elemental area, when without the need to increasing cost and technique, adds the luminous efficiency of OLED, it also avoid between each pixel light emission source simultaneously and produces colour mixture.
The change that those skilled in the art do when should recognize the scope and spirit of the present invention disclosed in the claim do not departed from appended by the present invention and retouching, within the protection range all belonging to claim of the present invention.
Claims (15)
1. manufacture a method for organic light-emitting structure, comprising:
Substrate forms planarization layer, and described planarization layer comprises negative photoresist material;
Mask is utilized to perform exposure technology to described negative photoresist material;
Perform developing process to the described negative photoresist material after exposure technology, thus obtain photoresist pattern, wherein said photoresist pattern comprises par and is positioned at the lug boss of par surrounding, and described lug boss has smooth surface; And
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the relative side surface of described lug boss.
2. the method for claim 1, wherein this mask comprises: photic zone and semi-permeable layer; Wherein, the region only covered by this light-transmissive film is this lug boss, and the region simultaneously covered by light-transmissive film and semi-permeable layer is this par.
3. method according to claim 2, wherein, this mask also comprises light shielding layer.
4. method according to claim 3, wherein, the region that this light shielding layer covers is the edge of this organic layer.
5. method according to claim 3, wherein, the region that this light shielding layer covers is the region that on this organic layer, data wire connects with the anode of Organic Light Emitting Diode, and/or this organic layer needs the region of coated glass material.
6. method according to claim 1, wherein, utilizes physical vapour deposition (PVD) or chemical vapor deposition method to be made on this par and lug boss by this this reflecting electrode.
7. organic light-emitting structure according to claim 6, wherein, the slope angle of jut is 25 degree to 50 degree.
8. method according to claim 1, wherein, this mask is grayscale mask.
9. method according to claim 1, wherein, this mask is intermediate tone mask.
10. method according to claim 1, wherein, this mask is half-tone phase shift mask.
11. 1 kinds of organic light-emitting structure, at least comprise: organic layer and the Organic Light Emitting Diode module be positioned on organic layer;
This organic layer comprises par and is positioned at the lug boss of par surrounding;
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the relative side surface of described lug boss.
12. organic light-emitting structure according to claim 11, wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
13. organic light-emitting structure according to claim 12, wherein, this reflector uses the metals such as Al, Ag or Ni or its alloy to make the level and smooth plane with high reverse--bias performance.
14. 1 kinds of organic luminescent assemblies, comprising: organic layer and the Organic Light Emitting Diode module be positioned on organic layer;
This organic layer comprises par and is positioned at the lug boss of par surrounding;
Described par is formed reflecting electrode and organic luminous layer, and wherein said reflecting electrode is also positioned on the relative side surface of described lug boss.
15. organic luminescent assemblies according to claim 14, wherein, this reflecting electrode is the anode of this Organic Light Emitting Diode module.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310285545.7A CN104282844B (en) | 2013-07-08 | 2013-07-08 | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly |
| TW102137927A TW201503443A (en) | 2013-07-08 | 2013-10-21 | Organic light-emitting structure and method for manufacturing thereof, and organic light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310285545.7A CN104282844B (en) | 2013-07-08 | 2013-07-08 | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104282844A true CN104282844A (en) | 2015-01-14 |
| CN104282844B CN104282844B (en) | 2017-02-08 |
Family
ID=52257525
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310285545.7A Active CN104282844B (en) | 2013-07-08 | 2013-07-08 | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104282844B (en) |
| TW (1) | TW201503443A (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104979375A (en) * | 2015-05-28 | 2015-10-14 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor and display device |
| CN105977390A (en) * | 2015-03-11 | 2016-09-28 | 吴忠帜 | Electroluminescent device |
| CN106033800A (en) * | 2015-03-16 | 2016-10-19 | 上海和辉光电有限公司 | Organic light emitting structure, organic light emitting device possessing the structure and panel |
| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN107863449A (en) * | 2017-10-26 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device, its preparation method and display device |
| US9933587B2 (en) | 2013-09-30 | 2018-04-03 | Corning Incorporated | OLEDs with improved light extraction using enhanced guided mode coupling |
| CN108172600A (en) * | 2017-12-29 | 2018-06-15 | 深圳市华星光电半导体显示技术有限公司 | For the color membrane substrates of WOLED displays and WOLED displays |
| CN109473391A (en) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN108063154B (en) * | 2017-12-14 | 2020-04-10 | 安徽熙泰智能科技有限公司 | Silicon-based color OLED micro-display device and manufacturing method thereof |
| US10741784B2 (en) | 2016-04-05 | 2020-08-11 | Corning Incorporated | Patterned organic light emitting diode (OLED) with enhanced light extraction |
| CN111554727A (en) * | 2020-06-01 | 2020-08-18 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN113327971A (en) * | 2021-06-30 | 2021-08-31 | 武汉华星光电半导体显示技术有限公司 | Display panel |
| WO2022193365A1 (en) * | 2021-03-16 | 2022-09-22 | 武汉华星光电半导体显示技术有限公司 | Oled display panel and oled display device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105810719B (en) * | 2016-05-27 | 2019-08-06 | 京东方科技集团股份有限公司 | A kind of pixel unit and preparation method thereof, array substrate and display device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1450665A (en) * | 2002-04-09 | 2003-10-22 | 株式会社半导体能源研究所 | Semiconductor display device |
| US20050046342A1 (en) * | 2003-08-28 | 2005-03-03 | Park Jin-Woo | Organic electroluminescence display |
| CN1765156A (en) * | 2003-01-24 | 2006-04-26 | 株式会社半导体能源研究所 | Light-emitting device, method for manufacturing same and electric apparatus using such light-emitting device |
| CN1800973A (en) * | 2005-01-04 | 2006-07-12 | 三星Sdi株式会社 | Flexible optical mask for lithographic and method producing same and patterning method |
| US20060284549A1 (en) * | 2005-06-21 | 2006-12-21 | Samsung Electronics Co., Ltd. | Light-emitting element, method of manufacturing the same and display substrate having the same |
| CN1937231A (en) * | 2005-09-22 | 2007-03-28 | 三星电子株式会社 | Display device and fabricating method thereof |
-
2013
- 2013-07-08 CN CN201310285545.7A patent/CN104282844B/en active Active
- 2013-10-21 TW TW102137927A patent/TW201503443A/en unknown
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1450665A (en) * | 2002-04-09 | 2003-10-22 | 株式会社半导体能源研究所 | Semiconductor display device |
| CN1765156A (en) * | 2003-01-24 | 2006-04-26 | 株式会社半导体能源研究所 | Light-emitting device, method for manufacturing same and electric apparatus using such light-emitting device |
| US20050046342A1 (en) * | 2003-08-28 | 2005-03-03 | Park Jin-Woo | Organic electroluminescence display |
| CN1800973A (en) * | 2005-01-04 | 2006-07-12 | 三星Sdi株式会社 | Flexible optical mask for lithographic and method producing same and patterning method |
| US20060284549A1 (en) * | 2005-06-21 | 2006-12-21 | Samsung Electronics Co., Ltd. | Light-emitting element, method of manufacturing the same and display substrate having the same |
| CN1937231A (en) * | 2005-09-22 | 2007-03-28 | 三星电子株式会社 | Display device and fabricating method thereof |
Cited By (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9933587B2 (en) | 2013-09-30 | 2018-04-03 | Corning Incorporated | OLEDs with improved light extraction using enhanced guided mode coupling |
| CN105977390B (en) * | 2015-03-11 | 2019-01-01 | 吴忠帜 | Electro photo-luminescent apparatus |
| CN105977390A (en) * | 2015-03-11 | 2016-09-28 | 吴忠帜 | Electroluminescent device |
| CN106033800A (en) * | 2015-03-16 | 2016-10-19 | 上海和辉光电有限公司 | Organic light emitting structure, organic light emitting device possessing the structure and panel |
| WO2016188248A1 (en) * | 2015-05-28 | 2016-12-01 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor, and display device |
| US10044001B2 (en) | 2015-05-28 | 2018-08-07 | Boe Technology Group Co., Ltd. | Display substrate and manufacturing method therefor, and display device |
| CN104979375A (en) * | 2015-05-28 | 2015-10-14 | 京东方科技集团股份有限公司 | Display substrate and manufacturing method therefor and display device |
| US10741784B2 (en) | 2016-04-05 | 2020-08-11 | Corning Incorporated | Patterned organic light emitting diode (OLED) with enhanced light extraction |
| CN106681099A (en) * | 2016-12-20 | 2017-05-17 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN106681099B (en) * | 2016-12-20 | 2020-05-01 | 厦门天马微电子有限公司 | Mask plate and array substrate |
| CN107863449A (en) * | 2017-10-26 | 2018-03-30 | 京东方科技集团股份有限公司 | A kind of organic electroluminescence device, its preparation method and display device |
| US10573842B2 (en) | 2017-10-26 | 2020-02-25 | Boe Technology Group Co., Ltd. | Organic electroluminescent device, method for manufacturing the same and display device |
| US20190131563A1 (en) * | 2017-10-26 | 2019-05-02 | Boe Technology Group Co., Ltd. | Organic electroluminescent device, method for manufacturing the same and display device |
| CN108063154B (en) * | 2017-12-14 | 2020-04-10 | 安徽熙泰智能科技有限公司 | Silicon-based color OLED micro-display device and manufacturing method thereof |
| CN108172600B (en) * | 2017-12-29 | 2020-01-17 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate for WOLED display and WOLED display |
| WO2019127790A1 (en) * | 2017-12-29 | 2019-07-04 | 深圳市华星光电半导体显示技术有限公司 | Color film substrate for use in woled display and woled display |
| CN108172600A (en) * | 2017-12-29 | 2018-06-15 | 深圳市华星光电半导体显示技术有限公司 | For the color membrane substrates of WOLED displays and WOLED displays |
| CN109473391A (en) * | 2018-11-12 | 2019-03-15 | 苏州汉骅半导体有限公司 | Air bridges manufacturing method |
| CN111554727A (en) * | 2020-06-01 | 2020-08-18 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN111554727B (en) * | 2020-06-01 | 2023-11-07 | 合肥维信诺科技有限公司 | Display panel and display device |
| WO2022193365A1 (en) * | 2021-03-16 | 2022-09-22 | 武汉华星光电半导体显示技术有限公司 | Oled display panel and oled display device |
| CN113327971A (en) * | 2021-06-30 | 2021-08-31 | 武汉华星光电半导体显示技术有限公司 | Display panel |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104282844B (en) | 2017-02-08 |
| TW201503443A (en) | 2015-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104282844A (en) | Organic light emitting structure, manufacturing method thereof and organic light emitting assembly | |
| CN104733501B (en) | The production method of dot structure, display device and dot structure | |
| US10573842B2 (en) | Organic electroluminescent device, method for manufacturing the same and display device | |
| US20200035770A1 (en) | Display substrate and manufacturing method thereof, and display device | |
| CN1933689A (en) | Area light emitting device | |
| WO2017086306A1 (en) | Organic electroluminescence device, organic electroluminescence device production method, illumination device, and display device | |
| CN108133951B (en) | Lighting device using organic light emitting diode and method of manufacturing the same | |
| CN109037493B (en) | OLED display substrate, manufacturing method thereof and display device | |
| US9799709B2 (en) | Pixel unit, method of manufacturing the same and display device | |
| JP7051440B2 (en) | OLED device and manufacturing method, display panel and display device | |
| EA035106B1 (en) | Oled light emitting device and display device | |
| JP2005276581A (en) | Planar light emitting device | |
| CN103718325A (en) | OLED/QLED luminous module having uniform appearance | |
| CN110379835B (en) | Display panel, display device and preparation method of display panel | |
| CN109166903B (en) | OLED display panel, manufacturing method thereof and display device | |
| CN107689421B (en) | Pixel defining layer and preparation method and application thereof | |
| CN104937738B (en) | Lighting module with optimization light output | |
| US11316123B2 (en) | Display panel and method for manufacturing the same | |
| CN110137233B (en) | Array substrate, preparation method thereof and display device | |
| US10345643B2 (en) | Array substrate, production method of the same, and liquid crystal display panel and display apparatus comprising the same | |
| JP2011090891A (en) | Organic electroluminescent element | |
| US20070049154A1 (en) | Method of fabricating field emission display device and cathode plate thereof | |
| CN113555403B (en) | Display panel and manufacturing method thereof | |
| CN116033784B (en) | Display panel and manufacturing method thereof | |
| CN213026170U (en) | Light emitting diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 201506, No. nine, No. 1568, Jinshan Industrial Zone, Shanghai, Jinshan District Patentee after: Shanghai Hehui optoelectronic Co., Ltd Address before: 201500, building two, building 100, 1, Jinshan Industrial Road, 208, Shanghai, Jinshan District Patentee before: EverDisplay Optronics (Shanghai) Ltd. |