CN104269470A - 能够释放应力的垂直结构led薄膜芯片的制备方法及结构 - Google Patents
能够释放应力的垂直结构led薄膜芯片的制备方法及结构 Download PDFInfo
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- CN104269470A CN104269470A CN201410483423.3A CN201410483423A CN104269470A CN 104269470 A CN104269470 A CN 104269470A CN 201410483423 A CN201410483423 A CN 201410483423A CN 104269470 A CN104269470 A CN 104269470A
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- 238000000034 method Methods 0.000 title claims abstract description 30
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- 230000004888 barrier function Effects 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 7
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- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 162
- 239000010408 film Substances 0.000 claims description 46
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 238000013517 stratification Methods 0.000 claims description 5
- 229910017750 AgSn Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 239000011229 interlayer Substances 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 238000009966 trimming Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
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- 230000008020 evaporation Effects 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 238000006386 neutralization reaction Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
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- 238000005286 illumination Methods 0.000 description 3
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- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- -1 AuSn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (11)
Priority Applications (1)
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CN201410483423.3A CN104269470B (zh) | 2014-09-22 | 2014-09-22 | 能够释放应力的垂直结构led薄膜芯片的制备方法 |
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CN201410483423.3A CN104269470B (zh) | 2014-09-22 | 2014-09-22 | 能够释放应力的垂直结构led薄膜芯片的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN104269470A true CN104269470A (zh) | 2015-01-07 |
CN104269470B CN104269470B (zh) | 2017-06-16 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373869A (zh) * | 2016-10-14 | 2017-02-01 | 闽南师范大学 | 半导体芯片的制造方法 |
WO2017054719A1 (zh) * | 2015-09-30 | 2017-04-06 | 西安炬光科技股份有限公司 | 一种用于半导体激光器的金属键合方法及使用该方法制备的半导体激光器 |
CN107482098A (zh) * | 2017-09-20 | 2017-12-15 | 南昌大学 | 一种薄膜led芯片结构 |
CN108767083A (zh) * | 2018-05-30 | 2018-11-06 | 河源市众拓光电科技有限公司 | 一种应力可调的垂直结构led芯片及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101840985A (zh) * | 2010-05-04 | 2010-09-22 | 厦门市三安光电科技有限公司 | 具有双反射层的氮化镓基垂直发光二极管及其制备方法 |
CN102197491A (zh) * | 2008-08-29 | 2011-09-21 | 弗朗霍夫应用科学研究促进协会 | 用于局部触点接通和局部掺杂半导体层的方法 |
-
2014
- 2014-09-22 CN CN201410483423.3A patent/CN104269470B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102197491A (zh) * | 2008-08-29 | 2011-09-21 | 弗朗霍夫应用科学研究促进协会 | 用于局部触点接通和局部掺杂半导体层的方法 |
CN101840985A (zh) * | 2010-05-04 | 2010-09-22 | 厦门市三安光电科技有限公司 | 具有双反射层的氮化镓基垂直发光二极管及其制备方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017054719A1 (zh) * | 2015-09-30 | 2017-04-06 | 西安炬光科技股份有限公司 | 一种用于半导体激光器的金属键合方法及使用该方法制备的半导体激光器 |
CN106373869A (zh) * | 2016-10-14 | 2017-02-01 | 闽南师范大学 | 半导体芯片的制造方法 |
CN107482098A (zh) * | 2017-09-20 | 2017-12-15 | 南昌大学 | 一种薄膜led芯片结构 |
CN107482098B (zh) * | 2017-09-20 | 2023-05-09 | 南昌大学 | 一种薄膜led芯片结构 |
CN108767083A (zh) * | 2018-05-30 | 2018-11-06 | 河源市众拓光电科技有限公司 | 一种应力可调的垂直结构led芯片及其制备方法 |
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CN104269470B (zh) | 2017-06-16 |
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Inventor after: Liu Junlin Inventor after: Wang Guangxu Inventor after: Tang Yingwen Inventor after: Xiong Chuanbing Inventor after: Jiang Fengyi Inventor before: Tang Yingwen Inventor before: Wang Guangxu Inventor before: Liu Junlin Inventor before: Xiong Chuanbing Inventor before: Jiang Fengyi |
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Address after: 999 No. 330031 Jiangxi province Nanchang Honggutan University Avenue Co-patentee after: NANCHANG GUIJI SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Patentee after: Nanchang University Address before: 330047 No. 235 East Nanjing Road, Jiangxi, Nanchang Co-patentee before: NANCHANG HUANGLYU LIGHTING Co.,Ltd. Patentee before: Nanchang University |
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