CN104269465B - 焦平面探测器相连缺陷元的识别方法与测试基片 - Google Patents
焦平面探测器相连缺陷元的识别方法与测试基片 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 description 4
- 238000003491 array Methods 0.000 description 3
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- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
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Abstract
本发明涉及焦平面探测器相连缺陷元的识别方法与测试基片,本发明提出的相连缺陷元识别方法,将基片处理为一种特殊的具备两种透光率的基片,即在同一基片上,形成具有两种透光率的区域。对于正常元,其响应电压与光敏元所对准的透光率区域对应;对于相连缺陷元,其响应电压是正常元响应电压的平均值(求和求平均);从而识别相邻缺陷元。方法简单易行,效果明显,具有较大的实际应用价值。
Description
技术领域
本发明涉及一种焦平面探测器相连缺陷元的识别方法,以及该方法中应用的基片。
背景技术
InSb红外焦平面探测器是通过铟柱将分别制作的InSb晶片和ROIC读出电路进行倒焊互连和减薄减反而得到的。随着应用的需要,焦平面阵列规模要求越来越大,相对于此,焦平面阵列像元尺寸的要求却越来越小。原材料缺陷、器件制造工艺等方面的影响越发显著,红外焦平面阵列不可避免地存在多元相连形成相连缺陷元。
此类缺陷元严重影响焦平面探测器的分辨率和可靠性等性能。但是,利用现有的焦平面测试方法来对这类缺陷元进行评价时,发现其响应和噪声与正常元基本相同。所以,利用现有的测试方法无法判别出缺陷元。
发明内容
本发明的目的是提供一种焦平面探测器相连缺陷元的识别方法以及该方法采用的测试基片,用以解决现有方法无法识别相连缺陷元的问题。
为实现上述目的,本发明的方案包括:
焦平面探测器相连缺陷元的识别方法,在基片上形成两种透光率的区域,两种透光率的区域间隔设置;将基片安装在面阵探测器前面;用焦平面探测器测试系统进行测试,得到响应电压数据以识别相连缺陷元。
所述两种透光率的区域为背景区域和若干窗口区块。
将基片安装在面阵探测器前面时,光敏元与对应的窗口区块对准。
对于正常元,其响应电压与光敏元所对准的透光率区域对应;对于相连缺陷元,其响应电压是正常元响应电压的平均值;从而识别相邻缺陷元。
所述背景区域与窗口区块通过设置不同透光率的薄膜形成;或者所述背景区域设置薄膜,窗口区块不设薄膜;或者所述背景区域不设薄膜,窗口区块设置薄膜。
一种基片,基片在其上形成两种透光率区域,两种透光率的区域间隔设置。
所述两种透光率的区域为背景区域和若干窗口区块。
所述背景区域与窗口区块通过设置不同透光率的薄膜形成。
所述背景区域与窗口区块通过设置不同透光率的薄膜形成;或者所述背景区域设置薄膜,窗口区块不设薄膜;或者所述背景区域不设薄膜,窗口区块设置薄膜。
本发明提出的相连缺陷元识别方法,将基片处理为一种特殊的具备两种透光率的基片,即在同一基片上,形成具有两种透光率的区域。对于正常元,其响应电压与光敏元所对准的透光率区域对应;对于相连缺陷元,其响应电压是正常元响应电压的平均值(求和求平均);从而识别相邻缺陷元。
两透光率区块的透光率的差异越大,缺陷元的响应电压平均值与正常元差别也越大,越容易对数据的分析处理。
附图说明
图1是本发明实施例的实施结构图;1为金薄膜,2为基片,3为InSb芯片,4为光敏元,5为DI ROIC读出电路;
图2是本发明实施例的基片图形。
具体实施方式
下面结合附图对本发明做进一步详细的说明。
本发明的焦平面探测器相连缺陷元的识别方法,在基片上形成两种不同透光率的区域;将基片安装在面阵探测器前面;用焦平面探测器测试系统进行测试,得到响应电压数据以识别相连缺陷元。
具体的,一种焦平面探测器相连缺陷元的识别方法,其步骤如下:
首先制作基片:
(1)将基片清洗干净;
(2)在基片表面旋涂光刻胶;
(3)对基片进行光刻、烘烤、曝光、显影等处理,制备薄膜窗口;
(4)将基片生长交错排列的两种不同透光率薄膜;
然后进行测试,测试所采用的焦平面探测器测试系统为现有系统,在此不再赘述;
(5)将制作好的基片安装在焦平面探测器前面进行测试;
(6)依据电压响应值来判别焦平面探测器缺陷元。
对于基片的制作,在工艺层面,包括将宝石基底清洗干净;在宝石基底表面旋涂AZ4330光刻胶;对宝石基底进行光刻、烘烤、曝光、显影等处理,制备薄膜窗口;将宝石基底放入真空镀膜机,将真空抽到一定值,生长两种不同透光率的薄膜,形成的基片如图2所示。
两种不同透光率薄膜可选择的多种组合如下:
组合1:窗口区块没有薄膜、全透光,背景部分为不透光的金膜。
组合2:窗口区块没有薄膜、全透光,背景部分为采用波段为(3.7-4.8)微米设计制作得到的薄膜。
组合3:窗口区块为不透光的金膜,背景部分为采用波段为(3.7-4.8)微米设计制作得到的薄膜。
组合4:窗口区块为采用波段为(1-3)微米设计制作得到的薄膜,背景部分为采用波段为(3.7-4.8)微米设计制作得到的薄膜。
不同透光率薄膜将焦平面单色探测单元分为两个波段探测单元。这两种探测器单元紧密排列。相比没有滤光片时单一的响应区域,这种特殊结构的滤光片将有相连缺陷元的探测器单元响应分为了几个区域,这样有利于探测器单元性能的识别与分析。因此相连缺陷元可以很容易的从两个波段探测器单元中获得。
将镀制两种不同透光率薄膜的滤光片安装在焦平面探测器前面,并与焦平面各探测元相对应。焦平面各探测元因滤光片中薄膜透过波段不同,在测试时透光率不同,响应电压不同,这样相连元输出电压与正常元输出电压存在较大差异,达到识别相连缺陷元的目的。方法简单易行,效果明显,具有较大的实际应用价值。
将基片安装在面阵探测器前面,对准结构如图1所示,芯片3与读出电路5通过铟柱倒焊互连。基片2上生长金薄膜1,光敏元4与仅薄膜上的窗口部分对准,光敏元所对应的两种透光率区域成对出现。测试数据如下表所示,证明了测试效果与理论推导吻合。
以上给出了具体的实施方式,但本发明不局限于所描述的实施方式。本发明的基本思路在于上述基本方案,对本领域普通技术人员而言,根据本发明的教导,设计出各种变形的模型、公式、参数并不需要花费创造性劳动。在不脱离本发明的原理和精神的情况下对实施方式进行的变化、修改、替换和变型仍落入本发明的保护范围内。
Claims (6)
1.焦平面探测器相连缺陷元的识别方法,其特征在于,在基片上形成两种透光率的区域,两种透光率的区域间隔设置;将基片安装在面阵探测器前面;用焦平面探测器测试系统进行测试,得到响应电压数据以识别相连缺陷元;所述两种透光率的区域为背景区域和若干窗口区块;将基片安装在面阵探测器前面时,光敏元与对应的窗口区块对准;对于正常元,其响应电压与光敏元所对准的透光率区域对应;对于相连缺陷元,其响应电压是正常元响应电压的平均值;从而识别相连缺陷元。
2.根据权利要求1所述的识别方法,其特征在于,所述背景区域与窗口区块通过设置不同透光率的薄膜形成;或者所述背景区域设置薄膜,窗口区块不设薄膜;或者所述背景区域不设薄膜,窗口区块设置薄膜。
3.用于权利要求1所述识别方法的基片,其特征在于,基片在其上形成两种透光率区域,两种透光率的区域间隔设置。
4.根据权利要求3所述的基片,其特征在于,所述两种透光率的区域为背景区域和若干窗口区块。
5.根据权利要求4所述的基片,其特征在于,所述背景区域与窗口区块通过设置不同透光率的薄膜形成。
6.根据权利要求5所述的基片,其特征在于,所述背景区域与窗口区块通过设置不同透光率的薄膜形成;或者所述背景区域设置薄膜,窗口区块不设薄膜;或者所述背景区域不设薄膜,窗口区块设置薄膜。
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