CN104267069A - Thin film type gas-sensitive element - Google Patents
Thin film type gas-sensitive element Download PDFInfo
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- CN104267069A CN104267069A CN201410532904.9A CN201410532904A CN104267069A CN 104267069 A CN104267069 A CN 104267069A CN 201410532904 A CN201410532904 A CN 201410532904A CN 104267069 A CN104267069 A CN 104267069A
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Abstract
The invention relates to a thin film type gas-sensitive element which comprises a substrate, wherein a first electrode and a second electrode are arranged on the two sides of the lower bottom surface of the substrate respectively; a first lead and a second lead are arranged on the first electrode and the second electrode respectively; a heater is arranged between the first electrode and the second electrode; a third electrode and a fourth electrode are arranged on the two sides of the upper surface of the substrate; a third lead and a fourth lead are arranged on the third electrode and the fourth electrode respectively; an oxide semiconductor is arranged between the third electrode and the fourth electrode. The thin film type gas-sensitive element is simple in structure, high in sensitivity and interchangeability, quick in response, high in mechanical strength and low in manufacturing cost.
Description
Technical field
The present invention relates to a kind of semiconductor devices, particularly relate to a kind of thin film type gas-sensitive element.
Background technology
From being born from gas sensor, because it has the features such as volume is little, energy consumption is low, highly sensitive, the response time is short, the detection of inflammable, explosive, poisonous, harmful gas and the application in detecting more and more extensive, play very large effect for what reduce the accident such as gas burst, fire.By initial semiconductor gas sensor composite component finally, gas sensor performance is greatly improved, but due to the gas sensing mechanism of sensing very complicated, up to the present a unified system is not also formed, in gas sensor performance study, also need systematized test and theoretical research, in addition in the application aspect of gas sensor, actively join application, have is exactly strengthen the research to other harmful gas gas sensors again, to being only at the early-stage with the detection of the gas sensor of benzene series gas-monitoring, need one can have interchangeability good simultaneously, physical strength is high, highly sensitive, the element of the multiple advantages such as energy consumption is low.
Summary of the invention
Technical matters to be solved by this invention is to provide that a kind of structure is simple, highly sensitive, response rapidly, physical strength is high, interchangeability good, the thin film type gas-sensitive element of low cost of manufacture.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of thin film type gas-sensitive element, comprise substrate, described substrate bottom surface both sides are respectively arranged with the first electrode, second electrode, described first electrode, second electrode is respectively arranged with the first lead-in wire, second lead-in wire, first electrode, well heater is provided with between second electrode, described substrate upper surface both sides are respectively arranged with the 3rd electrode, 4th electrode, described 3rd electrode, 4th electrode is respectively arranged with the 3rd lead-in wire, 4th lead-in wire, described 3rd electrode, oxide semiconductor is provided with between 4th electrode.
Described well heater is used for the heating of oxygen supply compound semiconductor, accelerated oxidation thing semiconductor is to the absorption of gas or release, when described oxide semiconductor is to the absorption of gas or release, self-conductance rate can change, thus affect the change of oxide semiconductor resistivity, realize the conversion between gas concentration and electric signal, electric signal is outputted to external circuit by the lead-in wire on electrode by described electric signal, thus realizes the monitoring of gas concentration.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described substrate is alumina substrate, and described aluminium oxide conduction, the capacity of heat transmission are strong, and be conducive to reducing element in-fighting, improve element sensitivity, simultaneous oxidation aluminium substrate physical strength is high, are conducive to the overload performance strengthening element.
Further, described 3rd electrode, the 4th electrode are pectination copper electrode, and described pectination copper electrode is conducive to the collection of electric transmission and electric current, thus reduce element internal to the loss of monitor signal.
Further, described oxide semiconductor is ZnO nano film, and described ZnO nano film produces porous nanometer structure after being heated, and contributes to absorption and the release of gas; After temperature declines, described ZnO nano film, recovers original shape characteristic, is conducive to the exchange performance improving element.
The invention has the beneficial effects as follows: structure is simple, highly sensitive, response is rapid, physical strength is high, interchangeability good, low cost of manufacture.
Accompanying drawing explanation
Fig. 1 is a kind of thin film type gas-sensitive component structure of the present invention schematic diagram;
In accompanying drawing, the list of parts representated by each label is as follows: 1, substrate, the 2, the 3rd lead-in wire, the 3, the 3rd electrode, 4, oxide semiconductor, the 5, the 4th electrode, the 6, the 4th lead-in wire, 7, well heater, 8, the first electrode, the 9, first lead-in wire, the 10, second lead-in wire, the 11, second electrode.
Embodiment
Be described principle of the present invention and feature below in conjunction with accompanying drawing, example, only for explaining the present invention, is not intended to limit scope of the present invention.
As shown in Figure 1, a kind of thin film type gas-sensitive element, comprise substrate 1, described substrate 1 bottom surface both sides are respectively arranged with the first electrode 8, second electrode 11, described first electrode 8, second electrode 11 is respectively arranged with the first lead-in wire 9, second lead-in wire 10, first electrode 8, well heater 7 is provided with between second electrode 11, described substrate 1 upper surface both sides are respectively arranged with the 3rd electrode 3, 4th electrode 5, described 3rd electrode 3, 4th electrode 5 is respectively arranged with the 3rd lead-in wire 2, 4th lead-in wire 6, described 3rd electrode 3, oxide semiconductor 4 is provided with between 4th electrode 5.
Described well heater 7 heats for oxygen supply compound semiconductor 4, the absorption of accelerated oxidation thing semiconductor 4 pairs of gases or release, when the absorption of described oxide semiconductor 4 pairs of gases or release, self-conductance rate can change, thus affect the change of oxide semiconductor 4 resistivity, realize the conversion between gas concentration and electric signal, electric signal is outputted to external circuit by the lead-in wire on electrode by described electric signal, thus realizes the monitoring of gas concentration.
Described substrate 1 is alumina substrate, and described aluminium oxide conduction, the capacity of heat transmission are strong, and be conducive to reducing element in-fighting, improve element sensitivity, simultaneous oxidation aluminium substrate 1 physical strength is high, are conducive to the overload performance strengthening element; Described 3rd electrode 3, the 4th electrode 5 are pectination copper electrode, and described pectination copper electrode is conducive to the collection of electric transmission and electric current, thus reduce element internal to the loss of monitor signal; Described oxide semiconductor 4 is ZnO nano film, and described ZnO nano film produces porous nanometer structure after being heated, and contributes to absorption and the release of gas; After temperature declines, described ZnO nano film, recovers original shape characteristic, is conducive to the exchange performance improving element.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. the present invention relates to a kind of thin film type gas-sensitive element, it is characterized in that, comprise substrate, described substrate bottom surface both sides are respectively arranged with the first electrode, the second electrode, described first electrode, the second electrode are respectively arranged with the first lead-in wire, the second lead-in wire, well heater is provided with between first electrode, the second electrode, described substrate upper surface both sides are respectively arranged with the 3rd electrode, the 4th electrode, described 3rd electrode, the 4th electrode are respectively arranged with the 3rd lead-in wire, the 4th lead-in wire, between described 3rd electrode, the 4th electrode, are provided with oxide semiconductor.
2. a kind of thin film type gas-sensitive element according to claim 1, it is characterized in that, described substrate is alumina substrate.
3. a kind of thin film type gas-sensitive element according to claim 1, it is characterized in that, described 3rd electrode, the 4th electrode are pectination copper electrode.
4. a kind of thin film type gas-sensitive element according to claim 1, it is characterized in that, described oxide semiconductor is ZnO nano film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410532904.9A CN104267069A (en) | 2014-09-30 | 2014-09-30 | Thin film type gas-sensitive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410532904.9A CN104267069A (en) | 2014-09-30 | 2014-09-30 | Thin film type gas-sensitive element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104267069A true CN104267069A (en) | 2015-01-07 |
Family
ID=52158610
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410532904.9A Pending CN104267069A (en) | 2014-09-30 | 2014-09-30 | Thin film type gas-sensitive element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104267069A (en) |
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2014
- 2014-09-30 CN CN201410532904.9A patent/CN104267069A/en active Pending
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150107 |