CN104266143B - 一种恶劣环境下使用的防爆led节能灯 - Google Patents
一种恶劣环境下使用的防爆led节能灯 Download PDFInfo
- Publication number
- CN104266143B CN104266143B CN201410468295.5A CN201410468295A CN104266143B CN 104266143 B CN104266143 B CN 104266143B CN 201410468295 A CN201410468295 A CN 201410468295A CN 104266143 B CN104266143 B CN 104266143B
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- CN
- China
- Prior art keywords
- saving lamp
- used under
- adverse circumstances
- lamp used
- great power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V23/00—Arrangement of electric circuit elements in or on lighting devices
- F21V23/003—Arrangement of electric circuit elements in or on lighting devices the elements being electronics drivers or controllers for operating the light source, e.g. for a LED array
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V3/00—Globes; Bowls; Cover glasses
- F21V3/04—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings
- F21V3/06—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material
- F21V3/062—Globes; Bowls; Cover glasses characterised by materials, surface treatments or coatings characterised by the material the material being plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2101/00—Point-like light sources
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410468295.5A CN104266143B (zh) | 2014-09-15 | 2014-09-15 | 一种恶劣环境下使用的防爆led节能灯 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410468295.5A CN104266143B (zh) | 2014-09-15 | 2014-09-15 | 一种恶劣环境下使用的防爆led节能灯 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104266143A CN104266143A (zh) | 2015-01-07 |
CN104266143B true CN104266143B (zh) | 2015-10-28 |
Family
ID=52157695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410468295.5A Active CN104266143B (zh) | 2014-09-15 | 2014-09-15 | 一种恶劣环境下使用的防爆led节能灯 |
Country Status (1)
Country | Link |
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CN (1) | CN104266143B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104094A (zh) * | 2009-12-21 | 2011-06-22 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
CN102157657A (zh) * | 2011-01-26 | 2011-08-17 | 中山大学 | 一种GaN基发光二极管以及制作方法 |
EP2365528A2 (en) * | 2010-03-09 | 2011-09-14 | LG Innotek Co., Ltd. | Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same |
CN102201516A (zh) * | 2011-04-22 | 2011-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | InGaN纳米柱阵列有源区LED及其制备方法 |
WO2012090400A1 (ja) * | 2010-12-28 | 2012-07-05 | 信越半導体株式会社 | 発光素子 |
JP2013041930A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003086839A (ja) * | 2001-09-07 | 2003-03-20 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
JP2008218740A (ja) * | 2007-03-05 | 2008-09-18 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP2013012684A (ja) * | 2011-06-30 | 2013-01-17 | Sharp Corp | 窒化物半導体発光素子 |
-
2014
- 2014-09-15 CN CN201410468295.5A patent/CN104266143B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102104094A (zh) * | 2009-12-21 | 2011-06-22 | 晶元光电股份有限公司 | 发光元件及其制造方法 |
EP2365528A2 (en) * | 2010-03-09 | 2011-09-14 | LG Innotek Co., Ltd. | Two light emitting diodes stacked in an n-p-n arrangement and LED package comprising the same |
WO2012090400A1 (ja) * | 2010-12-28 | 2012-07-05 | 信越半導体株式会社 | 発光素子 |
CN102157657A (zh) * | 2011-01-26 | 2011-08-17 | 中山大学 | 一种GaN基发光二极管以及制作方法 |
CN102201516A (zh) * | 2011-04-22 | 2011-09-28 | 中国科学院苏州纳米技术与纳米仿生研究所 | InGaN纳米柱阵列有源区LED及其制备方法 |
JP2013041930A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 窒化物半導体発光素子およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104266143A (zh) | 2015-01-07 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20190201 Address after: 211303 No. 1 Hebin Road, Chaqiao Town, Gaochun District, Nanjing City, Jiangsu Province Patentee after: Forster Nanjing Engineering Consulting Co. Ltd. Address before: 6/F, Building 333 Guiping Road, Xuhui District, Shanghai, 2003 Patentee before: Pan Fanfeng |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 211303 No. 1 Hebin Road, Chaqiao Town, Gaochun District, Nanjing City, Jiangsu Province Patentee after: Best construction technology Co., Ltd Address before: 211303 No. 1 Hebin Road, Chaqiao Town, Gaochun District, Nanjing City, Jiangsu Province Patentee before: FORSTER ENGINEERING CONSULTATION NANJING Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |