CN104251935B - Measure the device and method of wafer resistivity - Google Patents
Measure the device and method of wafer resistivity Download PDFInfo
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- CN104251935B CN104251935B CN201310261115.1A CN201310261115A CN104251935B CN 104251935 B CN104251935 B CN 104251935B CN 201310261115 A CN201310261115 A CN 201310261115A CN 104251935 B CN104251935 B CN 104251935B
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Abstract
The present invention proposes a kind of device and method for measuring wafer resistivity, and described device includes, measurement cephalic disc, measurement head, displacement bar and rotation motor；Measurement head is arranged at the one side of measurement cephalic disc, measurement head point first group of measurement head and second group of measurement head, and the head radius of curvature of second group of measurement head is bigger than the head radius of curvature of first group of measurement head；Displacement bar is arranged between measurement head and measurement cephalic disc, and rotation motor is arranged at the another side of measurement cephalic disc；The film of crystal column surface to be measured analyze first order result after first time measurement using first group of measurement head, illustrate that first group of measurement head has pierced through the film of crystal column surface to be measured if first order result has exception, second is carried out using second group of bigger measurement head of head radius of curvature to wafer to be measured to measure, it is not easy to pierce through the film for stating crystal column surface to be measured, so as to obtain accurate measurement result.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of device and method for measuring wafer resistivity.
Background technology
In the art of semiconductor manufacturing, the resistivity of semiconductor crystal wafer is one of very crucial parameter, resistivity
Whether the overall performance of semiconductor crystal wafer directly affects in acceptability limit.Therefore, it is necessary to described half in actual production
The resistivity of semiconductor wafer measures.
Measurement head is used in the prior art（Probe）The film formed to the semiconductor wafer surface carries out penetrating survey
Amount, i.e. the measurement head is penetrated in semiconductor wafer surface film to be measured, partly led to described by the measurement head
The film of body crystal column surface applies voltage, electric current is measured, so as to draw resistivity.
However, in practical operation, due to needing to measure the resistivity of different films, the thickness and material of different films are equal
Difference, some films are relatively thin and loose, when being penetrated using measurement head in film to be measured, easily puncture film to be measured, so as to
Obtained measurement data is 0, i.e. the result of measurement is inaccurate.
The content of the invention
It is an object of the invention to provide a kind of device and method for measuring wafer resistivity, measurement can be automatically selected
Head, double measurement is carried out, obtains accurate measurement result.
To achieve these goals, the present invention proposes a kind of device for measuring wafer resistivity, including：
Measure cephalic disc；
It is arranged at the measurement head of the measurement cephalic disc one side, the measurement head point first group of measurement head and second group of measurement
Head, wherein, the head radius of curvature of second group of measurement head is bigger than the radius of curvature on the head of first group of measurement head；
The displacement bar being arranged between the measurement head and the measurement cephalic disc, the displacement bar are used for controlling the measurement
The position of head；
The rotation motor of the measurement cephalic disc another side is arranged at, for rotating the measurement cephalic disc.
Further, in the device of described measurement wafer resistivity, the material of first group of measurement head is tungsten titanium
Alloy.
Further, in the device of described measurement wafer resistivity, first group of measurement head number is 2.
Further, in the device of described measurement wafer resistivity, first group of measurement first be used to measure
Metallic film, another is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer.
Further, in the device of described measurement wafer resistivity, the material of second group of measurement head is tungsten titanium
Alloy.
Further, in the device of described measurement wafer resistivity, second group of measurement head number is 2.
Further, in the device of described measurement wafer resistivity, second group of measurement first be used to measure
Metallic film, another is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer.
Further, the present invention also proposes a kind of method for measuring wafer resistivity, any using as described above
The device of wafer resistivity is measured, methods described includes step：
First time measurement is carried out to the film of crystal column surface to be measured using first group of measurement head, obtains first order result；
The first order result is analyzed, if the first order result accurately if complete measurement；If the first order result is deposited
Second of measurement is then carried out to wafer to be measured using second group of measurement head abnormal.
Further, in the device of described measurement wafer resistivity, when the first order result is 0, then explanation is first
As a result exist abnormal.
Compared with prior art, the beneficial effects are mainly as follows：In the device of the measurement wafer resistivity
In, the radius of curvature on the head of second group of measurement head is bigger than the radius of curvature on the head of first group of measurement head, is using
One group of measurement head to the film of crystal column surface to be measured analyze first order result after first time measurement, if described first
As a result then illustrate that first group of measurement head has pierced through the film of the crystal column surface to be measured in the presence of abnormal, use the curvature on head
Second group of bigger measurement head of radius carries out second to wafer to be measured and measured, and is not easy to pierce through the film for stating crystal column surface to be measured,
So as to obtain accurate measurement result.
Brief description of the drawings
Fig. 1 is the structural representation for the device that wafer resistivity is measured in one embodiment of the invention；
Fig. 2 is the flow chart for the method that wafer resistivity is measured in one embodiment of the invention.
Embodiment
Below in conjunction with the drawings and specific embodiments to it is proposed by the present invention measurement wafer resistivity device and method make into
One step describes in detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that
Accompanying drawing uses using very simplified form and non-accurately ratio, only of the invention conveniently, lucidly to aid in illustrating
The purpose of embodiment.
Fig. 1 is refer to, the present invention proposes a kind of device for measuring wafer resistivity, including：Measure cephalic disc 100, measurement head,
Displacement bar 300, rotation motor 400 and signal wire 500；
In the present embodiment, the measurement head is arranged at the one side of the measurement cephalic disc 100, first group of survey of the measurement head point
Head and second group of measurement head are measured, wherein, first group of measurement head number is 2, is measurement head 220 and measurement head 221 respectively,
The material of first group of measurement head is tungsten-titanium alloy, and its head radius of curvature is smaller, is easy to penetrate crystal column surface material harder
Film in, be convenient for measuring；Second group of measurement head number is 2, is measurement head 210 and measurement head 211 respectively, described the
The material of two groups of measurement heads is tungsten-titanium alloy, and its head radius of curvature is larger, is easy to penetrate crystal column surface material more loose and thick
In the more thin film of degree, it will not be pierced through；Just because of second group of measurement head head radius of curvature than first
The radius of curvature on the head of group measurement head is big, therefore can select different films different measurement heads；
The displacement bar 300 is arranged between the measurement head and the measurement cephalic disc 100, and the displacement bar 300 is used for
The position of the measurement head is controlled, wherein, the displacement bar 300 is connected with signal wire 500；If selection uses one of measurement
Head, then transmit signal using signal wire 500 and to the displacement bar 300 and control the displacement bar 300 to stretch out, so as to will be by
The measurement head for selecting to use, which is stretched out, to be easy to penetrate in wafer to be measured；
Rotation motor 400 is arranged at the another side of the measurement cephalic disc 100, for rotating the measurement cephalic disc 100, so as to
Drive the measurement head to rotate, be directed at wafer to be measured.
In the present embodiment, it is also proposed that using the application method of the device of above-mentioned measurement wafer resistivity, refer to Fig. 2, institute
Stating the method for measurement wafer resistivity includes：
First time measurement is carried out to the film of crystal column surface to be measured using first group of measurement head, obtains first order result；
The first order result is analyzed, if the first order result accurately if complete measurement；If the first order result is deposited
Second of measurement is then carried out to wafer to be measured using second group of measurement head abnormal.
First is used to measure metallic film for first group of measurement, and e.g. measurement head 220 is used to measure metallic film,
Another is that measurement head 221 is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer, because metallic film majority is
Copper, and copper has very strong diffusivity, therefore in order to avoid pollution, selection use two kinds of measurement heads.
Similarly, second group of measurement first be used to measure metallic film, e.g. measurement head 210 is used to measure metal
Film, another is that measurement head 211 is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer.
When the first order result is 0, then it is abnormal to illustrate that first order result is present, i.e. the first group of measurement head and thorn of selection
Wear the film of crystal column surface to be measured, obtained measurement result is 0 explanation and unmeasured accurate, automatically select at this moment material compared with
The second soft measurement head re-starts measurement, if measurement result is still 0, it is abnormal to illustrate that wafer to be measured is present, it should treat
Survey wafer and carry out analysis lookup reason.
To sum up, in the device and method of measurement wafer resistivity provided in an embodiment of the present invention, in the measurement wafer
In the device of resistivity, the radius of curvature of the radius of curvature on the head of second group of measurement head than the head of first group of measurement head
Greatly, the film of crystal column surface to be measured divide first order result after first time measurement using first group of measurement head
Analysis, illustrate that first group of measurement head has pierced through the film of the crystal column surface to be measured if the first order result has exception,
Second is carried out to wafer to be measured to measure, be not easy to pierce through and state crystalline substance to be measured using second group of bigger measurement head of the radius of curvature on head
The film of circular surfaces, so as to obtain accurate measurement result.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (9)
1. a kind of device for measuring wafer resistivity, including：
Measure cephalic disc；
The measurement head of the measurement cephalic disc one side is arranged at, the measurement head divides first group of measurement head and second group of measurement head, its
In, the head radius of curvature of second group of measurement head is bigger than the radius of curvature on the head of first group of measurement head；
The displacement bar being arranged between the measurement head and the measurement cephalic disc, the displacement bar are used for controlling the measurement head
Position；
The rotation motor of the measurement cephalic disc another side is arranged at, for rotating the measurement cephalic disc.
2. the device of measurement wafer resistivity as claimed in claim 1, it is characterised in that the material of first group of measurement head
For tungsten-titanium alloy.
3. the device of measurement wafer resistivity as claimed in claim 2, it is characterised in that first group of measurement head number be
2.
4. the device of measurement wafer resistivity as claimed in claim 3, it is characterised in that first use of first group of measurement
In measurement metallic film, another is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer.
5. the device of measurement wafer resistivity as claimed in claim 1, it is characterised in that the material of second group of measurement head
For tungsten-titanium alloy.
6. the device of measurement wafer resistivity as claimed in claim 5, it is characterised in that second group of measurement head number be
2.
7. the device of measurement wafer resistivity as claimed in claim 6, it is characterised in that first use of second group of measurement
In measurement metallic film, another is used to measure polysilicon layer, self-alignment silicide layer and diffusion layer.
A kind of 8. method for measuring wafer resistivity, using any measurement wafer resistivity as described in claim 1 to 7
Device, methods described include：
First time measurement is carried out to the film of crystal column surface to be measured using first group of measurement head, obtains first order result；
The first order result is analyzed, if the first order result accurately if complete measurement；If the first order result exists different
Chang Ze carries out second to wafer to be measured using second group of measurement head and measured.
9. the method for measurement wafer resistivity as claimed in claim 8, it is characterised in that when the first order result is 0, then say
Bright first order result exists abnormal.
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| CN201310261115.1A CN104251935B (en) | 2013-06-26 | 2013-06-26 | Measure the device and method of wafer resistivity |
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| CN201310261115.1A CN104251935B (en) | 2013-06-26 | 2013-06-26 | Measure the device and method of wafer resistivity |
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| CN104251935B true CN104251935B (en) | 2018-03-06 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107817386A (en) * | 2017-09-15 | 2018-03-20 | 北方电子研究院安徽有限公司 | A kind of CCD wafers test device for insulation resistance |
| CN108120409B (en) * | 2017-12-25 | 2020-05-19 | 武汉华星光电技术有限公司 | Film thickness measuring apparatus and film thickness measuring method |
| CN109374685A (en) * | 2018-11-23 | 2019-02-22 | 遵义市精科信检测有限公司 | The quality inspection method of polycrystal silicon ingot |
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| US4706015A (en) * | 1986-01-09 | 1987-11-10 | Chen James T C | Method and circuit for reducing contact resistance of the potential probes of a four-point-probe in contact with a III-V compound semiconductor wafer |
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Effective date of registration: 20200811 Address after: 1 / F, building 9, No. 18, Wenchang Avenue, Daxing Economic and Technological Development Zone, Beijing 100176 Patentee after: North IC Technology Innovation Center (Beijing) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corp. |
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