CN106910695A - The electrical property feature method of testing and device of a kind of thin film transistor (TFT) - Google Patents
The electrical property feature method of testing and device of a kind of thin film transistor (TFT) Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 108
- 238000010998 test method Methods 0.000 title claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 108
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010408 film Substances 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 55
- 229920005591 polysilicon Polymers 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 45
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 41
- 238000005070 sampling Methods 0.000 claims description 41
- 230000004888 barrier function Effects 0.000 claims description 30
- 230000005284 excitation Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 14
- 238000005259 measurement Methods 0.000 claims description 13
- 238000004458 analytical method Methods 0.000 claims description 9
- 238000003306 harvesting Methods 0.000 claims description 7
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 230000005856 abnormality Effects 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000004590 computer program Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000002210 silicon-based material Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012956 testing procedure Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Thin Film Transistor (AREA)
Abstract
The embodiment of the invention discloses the electrical property feature method of testing and device of a kind of thin film transistor (TFT).In the program, because carrier mobility is different in active layer, reflection case to microwave signal is different, and carrier mobility reflects the electric characteristics of thin film transistor (TFT), thus, in this programme, active layer is irradiated using laser, after exciting generation carrier, by obtaining reflection case of the active layer to microwave signal, the electrical property feature of thin film transistor (TFT) can just be analyzed, compared with test is carried out again after the technique for completing source-drain electrode in the prior art, can be after active layer be formed with regard to the electrical property feature of testing film transistor, realize the electrical property feature of look-ahead thin film transistor (TFT), note abnormalities early, reduce discarded rate.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of thin film transistor (TFT) electrical property feature method of testing and dress
Put.
Background technology
At present, thin film transistor (TFT) has become very important a kind of device in display device, and its electrical property feature can influence
The performance of display device.In process of production, it is necessary to the electrical property feature of thin film transistor (TFT), such as operating current (Ion), leakage current
(Ioff), carrier mobility (Mobility, Mob), threshold voltage (Vth), measure, to avoid showing product exception.It is existing
Have in technology, the mode that a kind of electric property to thin film transistor (TFT) is measured is after the completion of source-drain electrode technique, then to make
Analysis is measured with electrical characteristic test equipment (EPM Tester), it is necessary to apply certain to grid, source electrode, drain electrode respectively
Voltage.But, if when the generation pollution of future technique causes device electric abnormal, being also intended to when ability after electrical property feature test
It was found that, often incident is abnormal or even scrap to large-tonnage product all by 3~4 days, is easily caused during finding.
The content of the invention
The purpose of the embodiment of the present invention is to provide the electrical property feature method of testing and device of a kind of thin film transistor (TFT), for solving
The electrical property feature test mode of certainly existing thin film transistor (TFT) causes discarded rate problem high not in time.
The purpose of the embodiment of the present invention is achieved through the following technical solutions：
A kind of electrical property feature method of testing of thin film transistor (TFT), including：
After the active layer for forming thin film transistor (TFT) to be tested, using the first preset energy laser excitation described in have
Active layer produces carrier, while the microwave signal irradiation using the second preset energy produces the active layer of carrier, and obtains
Take reflected energy of the active layer to the microwave signal of second preset energy；
The reflected energy of the microwave signal of different active layer according to advance collection to second preset energy with it is thin
The corresponding relation of the electrical property feature value of film transistor, and the active layer for obtaining is to the microwave letter of second preset energy
Number reflected energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
It is preferred that the method also includes：
Reflected energy and film crystal of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of the electrical property feature value of pipe.
It is preferred that the material of the active layer is polysilicon；
Reflected energy and film crystal of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of the electrical property feature value of pipe, including：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone,
It is irradiated using the laser of various different energy, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while sharp
The polysilicon for producing carrier is irradiated with the microwave signal of the second preset energy, the polycrystalline of each electrical property feature test zone is obtained
Reflected energy of the silicon to the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test section
The electrical property feature value of the thin film transistor (TFT) in domain；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave of the second preset energy
The reflected energy of signal, obtains reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy
Electrical property feature value corresponding relation.
It is preferred that the material of the active layer is non-crystalline silicon；
Reflected energy and film crystal of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of the electrical property feature value of pipe, including：
Using the silane SiH of different flow4Electrical property feature test zone on multiple different sampling substrates forms non-
After crystal silicon, using the non-crystalline silicon of each electrical property feature test zone on the laser excitation of the first preset energy each sampling substrate
Carrier is produced, while the microwave signal irradiation using the second preset energy produces the non-crystalline silicon of carrier, each sampling is obtained
The reflected energy of microwave signal of the non-crystalline silicon of each electrical property feature test zone on substrate to the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each on each sampling substrate
The electrical property feature value of the thin film transistor (TFT) of electrical property feature test zone；
Using the electrical property feature value of each electrical property feature test zone on each sampling substrate of measurement with non-crystalline silicon to second
The reflected energy of the microwave signal of preset energy, obtains reflection energy of the different active layers to the microwave signal of the second preset energy
The corresponding relation of the electrical property feature value of amount and thin film transistor (TFT).
It is preferred that after the active layer for forming thin film transistor (TFT) to be tested, the laser using the first preset energy swashs
Hair active layer produces carrier, including：
The surface of the insulating barrier is irradiated using the laser of the first preset energy, described is had to be excited through the insulating barrier
Active layer produces carrier, while the surface of the insulating barrier is irradiated using the microwave signal of the second preset energy, with through described
Insulating barrier irradiation produces the active layer of carrier, and obtains the active layer to the anti-of the microwave signal of second preset energy
Penetrate energy.
A kind of electrical property feature test device of thin film transistor (TFT), including：
Microwave reflection energy harvesting unit, for after the active layer for forming thin film transistor (TFT) to be tested, using the
Active layer described in the laser excitation of one preset energy produces carrier, while irradiated using the microwave signal of the second preset energy producing
The active layer of raw carrier, and obtain reflected energy of the active layer to the microwave signal of second preset energy；
Electrical property feature analytic unit, for the advance different active layer for gathering of basis to the micro- of second preset energy
The corresponding relation of the reflected energy of ripple signal and the electrical property feature value of thin film transistor (TFT), and the active layer for obtaining is to described
The reflected energy of the microwave signal of the second preset energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
It is preferred that the device also includes collecting unit, it is used for：
Reflected energy and film crystal of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of the electrical property feature value of pipe.
It is preferred that the material of the active layer is polysilicon；
The collecting unit, specifically for：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone,
It is irradiated using the laser of various different energy, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while sharp
The polysilicon for producing carrier is irradiated with the microwave signal of the second preset energy, the polycrystalline of each electrical property feature test zone is obtained
Reflected energy of the silicon to the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test section
The electrical property feature value of the thin film transistor (TFT) in domain；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave of the second preset energy
The reflected energy of signal, obtains reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy
Electrical property feature value corresponding relation.
It is preferred that the material of the active layer is non-crystalline silicon；
The sampling unit, specifically for：
Using the silane SiH of different flow4Electrical property feature test zone on multiple different sampling substrates forms non-
After crystal silicon, using the non-crystalline silicon of each electrical property feature test zone on the laser excitation of the first preset energy each sampling substrate
Carrier is produced, while the microwave signal irradiation using the second preset energy produces the non-crystalline silicon of carrier, each sampling is obtained
The reflected energy of microwave signal of the non-crystalline silicon of each electrical property feature test zone on substrate to the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each on each sampling substrate
The electrical property feature value of the thin film transistor (TFT) of electrical property feature test zone；
Using the electrical property feature value of each electrical property feature test zone on each sampling substrate of measurement with non-crystalline silicon to second
The reflected energy of the microwave signal of preset energy, obtains reflection energy of the different active layers to the microwave signal of the second preset energy
The corresponding relation of the electrical property feature value of amount and thin film transistor (TFT).
It is preferred that the microwave reflection energy harvesting unit, specifically for：
The surface of the insulating barrier is irradiated using the laser of the first preset energy, described is had to be excited through the insulating barrier
Active layer produces carrier, while the surface of the insulating barrier is irradiated using the microwave signal of the second preset energy, with through described
Insulating barrier irradiation produces the active layer of carrier, and obtains the active layer to the anti-of the microwave signal of second preset energy
Penetrate energy.
The embodiment of the present invention has the beneficial effect that：
In the electrical property feature method of testing and device of a kind of thin film transistor (TFT) provided in an embodiment of the present invention, due to active layer
Middle carrier mobility is different, and the reflection case to microwave signal is different, and carrier mobility reflects thin film transistor (TFT)
Electric characteristics, thus, in this programme, active layer is irradiated using laser, after exciting generation carrier, by obtaining active layer to micro-
The reflection case of ripple signal, it is possible to analyze the electrical property feature of thin film transistor (TFT), with the work for completing source-drain electrode in the prior art
Test is carried out after skill again to compare, can be realized pre- in advance after active layer is formed with regard to the electrical property feature of testing film transistor
The electrical property feature of thin film transistor (TFT) is surveyed, is noted abnormalities early, reduce discarded rate.
Brief description of the drawings
Fig. 1 is a kind of electrical property feature method of testing flow chart of thin film transistor (TFT) provided in an embodiment of the present invention；
Fig. 2 is the distribution schematic diagram of EPM Tester Key provided in an embodiment of the present invention；
Fig. 3 is the schematic diagram for applying different ED energy when carrying out ELA techniques to non-crystalline silicon provided in an embodiment of the present invention；
Fig. 4 is the u-PCR of different ED energy provided in an embodiment of the present invention and measurement；
Fig. 5 is the device electric characteristic value under different ED energy provided in an embodiment of the present invention；
Fig. 6 is a kind of electrical property feature test device schematic diagram of thin film transistor (TFT) provided in an embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawings and examples to the present invention provide a kind of thin film transistor (TFT) electrical property feature method of testing and
Device is illustrated in greater detail.
As shown in figure 1, the embodiment of the present invention provides a kind of electrical property feature method of testing of thin film transistor (TFT), it is implemented
Mode at least comprises the following steps：
Step 110, after the active layer for forming thin film transistor (TFT) to be tested, the laser using the first preset energy swashs
Hair active layer produces carrier, while the microwave signal irradiation using the second preset energy produces the active layer of carrier, and obtains
Take reflected energy of the active layer to the microwave signal of the second preset energy.
Reflected energy of the different active layer of step 120, basis collection in advance to the microwave signal of the second preset energy
With the corresponding relation of the electrical property feature value of thin film transistor (TFT), and the active layer for obtaining is to the microwave signal of the second preset energy
Reflected energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
Wherein, can be simulated to thin film transistor (TFT) using the laser excitation active layer generation carrier of the first preset energy
Active layer produces the situation of carrier when grid, source electrode, drain electrode applied voltage, therefore, it is possible to reflect the electrical of thin film transistor (TFT)
Feature.
In the embodiment of the present invention, because carrier mobility is different in active layer, the reflection case to microwave signal is different,
And carrier mobility reflects the electrical property feature of thin film transistor (TFT), thus, in this programme, active layer is irradiated using laser, swash
After hair produces carrier, by obtaining reflection case of the active layer to microwave signal, it is possible to analyze the electricity of thin film transistor (TFT)
Property feature, with the prior art complete source-drain electrode technique after carry out test again compared with, can formed active layer after just test
The electrical property feature of thin film transistor (TFT), realizes the electrical property feature of look-ahead thin film transistor (TFT), notes abnormalities early, reduces useless
Abandon rate.
Wherein, the electrical property feature value of thin film transistor (TFT) includes operating current, leakage current, threshold voltage, carrier mobility,
Etc..
Wherein, the material of active layer can be polycrystalline silicon material, or amorphous silicon material, etc..
It should be noted that the carrier mobility that active layer is produced is bigger, the reflection case to microwave signal is more obvious,
Test result is more accurate, for example low temperature polycrystalline silicon (Low Temperature Poly-silicon, LTPS) device, defect in film
Less compared to non-crystalline silicon, the carrier mobility of generation is larger, and the solution of the present invention is more applicable.
During specific implementation, for the ease of the electrical property feature value of analysed film transistor, it is preferred that the embodiment of the present invention is provided
Method also include：Reflected energy and film crystal of the different active layers to the microwave signal of the second preset energy are gathered in advance
The corresponding relation of the electrical property feature value of pipe.
In implementation, the material of active layer is different, accordingly, different active layers is gathered in advance to the micro- of the second preset energy
The concrete scheme when reflected energy of ripple signal is from the corresponding relation of the electrical property feature value of thin film transistor (TFT) may be different.Divide below
Not illustrated as polycrystalline silicon material and as a example by amorphous silicon material with active layer.
In a kind of possible embodiment, the material of active layer is polysilicon；Different active layers are gathered in advance to second
The corresponding relation of the reflected energy of the microwave signal of preset energy and the electrical property feature value of thin film transistor (TFT), specific implementation can
To be：
First, after multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, each electrical property feature is tested
Region, is irradiated using the laser of various different energy, to form the polysilicon of different structure；
Secondly, carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy,
The polysilicon of carrier is produced using the microwave signal irradiation of the second preset energy simultaneously, each electrical property feature test zone is obtained
Polysilicon to the reflected energy of the microwave signal of the second preset energy；
Then, formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature and survey
Try the electrical property feature value of the thin film transistor (TFT) in region；
Finally, using the electrical property feature value and polysilicon of each electrical property feature test zone for measuring to the second preset energy
The reflected energy of microwave signal, the reflected energy for obtaining different active layers to the microwave signal of the second preset energy is brilliant with film
The corresponding relation of the electrical property feature value of body pipe.
It is that polycrystalline is prepared using quasi-molecule laser annealing (Excimer Laser Annel, ELA) technique in the present embodiment
Silicon, non-crystalline silicon is processed using energy laser higher under certain condition, it is possible to form polysilicon structure, use
Laser energy it is different, defect situation is different in the structure and film of the polysilicon of formation, accordingly, the carrier that can be generated
Situation is different, and the reflection case to microwave signal is different.
In alternatively possible embodiment, the material of active layer is non-crystalline silicon；According to the original of non-crystalline silicon (a-Si) film forming
Reason：SiH4G ()+Ar (g) → a-Si (s) understands, using different silane SiH4Flow can just grow up in different structure and film
The non-crystalline silicon of defect, therefore, it can utilize a kind of SiH of flow on each sampling substrate4A kind of polysilicon is formed to be adopted
Sample.Based on this, reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy are gathered in advance
Electrical property feature value corresponding relation, specific implementation can be：
First, using the SiH of different flow4Electrical property feature test zone on multiple different sampling substrates forms non-
After crystal silicon, using the non-crystalline silicon of each electrical property feature test zone on the laser excitation of the first preset energy each sampling substrate
Carrier is produced, while the microwave signal irradiation using the second preset energy produces the non-crystalline silicon of carrier, each sampling is obtained
The reflected energy of microwave signal of the non-crystalline silicon of each electrical property feature test zone on substrate to the second preset energy；
Then, formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measured on each sampling substrate
Each electrical property feature test zone thin film transistor (TFT) electrical property feature value；
Finally, using the electrical property feature value and non-crystalline silicon pair of each electrical property feature test zone on each sampling substrate of measurement
The reflected energy of the microwave signal of the second preset energy, obtains different active layers to the anti-of the microwave signal of the second preset energy
Penetrate the corresponding relation of energy and the electrical property feature value of thin film transistor (TFT).
In the present embodiment, a kind of amorphous silicon active layer is formd on each sampling substrate, for a sampling substrate,
Can be using the average value of the electrical property feature value of each electrical property feature test zone on the sampling substrate as on the sampling substrate
Amorphous silicon active layer electrical property feature value.
In above gatherer process, the sample data of collection is more, the electrical property feature value of the thin film transistor (TFT) for analyzing accordingly
It is more accurate.
It should be noted that the influence due to metal to microwave signal is larger, as long as being not covered with above active layer
Metal level can be tested using the solution of the present invention.
Based on this, during specific implementation, it is preferred that in above-mentioned steps 110, forming the active of thin film transistor (TFT) to be tested
After layer, carrier is produced using the laser excitation active layer of the first preset energy, specific implementation can be：Using first
The laser of preset energy irradiates the surface of insulating barrier, excites active layer to produce carrier with through insulating barrier, while using second
The microwave signal of preset energy irradiates the surface of insulating barrier, produces the active layer of carrier with through insulating barrier irradiation, and obtain
Reflected energy of the active layer to the microwave signal of the second preset energy.In the present embodiment, due to insulating barrier to active layer to microwave
The reflection case influence very little of signal, can ignore, therefore, use carries out electrical property feature again after insulating barrier is formed
Test, certainly, during collecting sample, also will again be acquired, to keep standard consistent after insulating barrier is formed.
Below by taking the active layer of polycrystalline silicon material as an example, to a kind of the electrical of thin film transistor (TFT) provided in an embodiment of the present invention
Characteristics test method is explained in more detail.
In the present embodiment, illustrated by taking the electrical property feature value test of LTPS devices as an example.Firstly, it is necessary to collection in advance is not
Reflected energy and the electrical property feature value of thin film transistor (TFT) of the same polysilicon active layer to the microwave signal of the second preset energy
Corresponding relation, wherein it is desired to a sampling mother substrate, as shown in Fig. 2 except forming thin on the base board unit 22 of mother substrate 21
Outside film transistor, while the predeterminable area also needed on the periphery of mother substrate also forms the thin film transistor (TFT) of test, that is, formed
Electrical property feature feeler switch (Electronic Parameter Measurement Tester Key, EPM Tester Key) 23,
EPM Tester Key regions are above-mentioned electrical property feature test zone.Specific acquisition step is as follows：
Step one, sampling mother substrate on each base board unit region formed non-crystalline silicon, while in each of mother substrate
Individual electrical property feature test zone is also formed after non-crystalline silicon, and mother substrate is processed using ELA techniques, is transformed amorphous silicon into
Polysilicon active layer.Wherein, as shown in figure 3, applying various different energy density (Energy to each electrical property feature test zone
Density, ED) energy, the identical (frame dashed lines of ED energy that two electrical property feature test zones on a same row apply
It is shown), such as the first row applies 400mJ/cm2, often row increases 5mJ/cm afterwards2。
Step 3, the laser irradiation mother substrate using the first preset energy, excite the polycrystalline of each electrical property feature test zone
Silicon active layer produce carrier, while using polysilicon active layer from microwave signal transceiver to each electrical property feature test zone
Launch the microwave signal of the second preset energy, and measure the reflected energy value of the carrier that is produced by illumination to the microwave signal
(Microwave photo conductor response, u-PCR).For two electrical property feature test zones of same a line
Measured value can average.In Fig. 4, show and apply different ED energy, and the u-PCR for measuring, wherein, microwave signal
Energy value is embodied by the magnitude of voltage changed.
Step 4, formed thin film transistor (TFT) source-drain electrode after, test each using electrical property feature measuring apparatus electrical
The electrical property feature value of the thin film transistor (TFT) in characteristic test region.As shown in figure 5, the device electric that have recorded under different ED energy is special
Value indicative, including Ion、Ioff、Vth、Mob。
Can be analyzed from data and drawn, the value of u-PCR is linear with the electrical property feature value of device, that is to say, that device
The electrical property feature value of the part linear change amount certain as the value of the u-PCR for measuring has, analysis process is simpler.
By above step, the test result of the multiple mother substrates of collection, when the data of collection are enough, then according to collection
Data are tested.In the present embodiment, the electrical property feature test of thin film transistor (TFT) is carried out after ELA techniques form polysilicon,
Specific testing procedure is as follows：
Step one, the laser excitation polysilicon active layer generation carrier using the first preset energy, while using second
The microwave signal irradiation of preset energy produces the polysilicon active layer of carrier, and obtains polysilicon active layer to the second default energy
The reflected energy of the microwave signal of amount
Step 2, the reflection according to the different polysilicon active layer for gathering in advance to the microwave signal of the second preset energy
The corresponding relation of the electrical property feature value of energy and thin film transistor (TFT), and the polysilicon active layer for obtaining is to the second preset energy
The reflected energy of microwave signal, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
Based on same inventive concept, the embodiment of the present invention also provides a kind of electrical property feature test dress of thin film transistor (TFT)
Put, as shown in fig. 6, including microwave reflection energy harvesting unit 601 and electrical property feature analytic unit 602.Wherein：
Microwave reflection energy harvesting unit 601, for after the active layer for forming thin film transistor (TFT) to be tested, utilizing
The laser excitation active layer of the first preset energy produces carrier, while irradiated using the microwave signal of the second preset energy producing
The active layer of carrier, and obtain reflected energy of the active layer to the microwave signal of the second preset energy；
Electrical property feature analytic unit 602, for the advance different active layer for gathering of basis to the micro- of the second preset energy
The corresponding relation of the reflected energy of ripple signal and the electrical property feature value of thin film transistor (TFT), and the active layer for obtaining is default to second
The reflected energy of the microwave signal of energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
In the embodiment of the present invention, because carrier mobility is different in active layer, the reflection case to microwave signal is different,
And carrier mobility reflects the electric characteristics of thin film transistor (TFT), thus, in this programme, active layer is irradiated using laser, swash
After hair produces carrier, by obtaining reflection case of the active layer to microwave signal, it is possible to analyze the electricity of thin film transistor (TFT)
Property feature, with the prior art complete source-drain electrode technique after carry out test again compared with, can formed active layer after just test
The electrical property feature of thin film transistor (TFT), realizes the electrical property feature of look-ahead thin film transistor (TFT), notes abnormalities early, reduces useless
Abandon rate.
The scheme of the embodiment of the present invention can be controlled to implement by processor.
It is preferred that the device also includes collecting unit, it is used for：
Reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy are gathered in advance
The corresponding relation of electrical property feature value.
It is preferred that the material of active layer is polysilicon；
Collecting unit, specifically for：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone,
It is irradiated using the laser of various different energy, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while sharp
The polysilicon for producing carrier is irradiated with the microwave signal of the second preset energy, the polycrystalline of each electrical property feature test zone is obtained
Reflected energy of the silicon to the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test section
The electrical property feature value of the thin film transistor (TFT) in domain；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave of the second preset energy
The reflected energy of signal, obtains reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy
Electrical property feature value corresponding relation.
It is preferred that the electrical property feature value of thin film transistor (TFT) includes operating current, leakage current, threshold voltage, carrier mobility
Rate.
It is preferred that the material of active layer is polysilicon；
Collecting unit, specifically for：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone,
It is irradiated using the laser of various different energy, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while sharp
The polysilicon for producing carrier is irradiated with the microwave signal of the second preset energy, the polycrystalline of each electrical property feature test zone is obtained
Reflected energy of the silicon to the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test section
The electrical property feature value of the thin film transistor (TFT) in domain；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave of the second preset energy
The reflected energy of signal, obtains reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of the second preset energy
Electrical property feature value corresponding relation.
It is preferred that microwave reflection energy harvesting unit, specifically for：
Formed after the insulating barrier of covering active layer, the surface of insulating barrier is irradiated using the laser of the first preset energy, with
Active layer is excited to produce carrier through insulating barrier, while irradiating the table of insulating barrier using the microwave signal of the second preset energy
Face, produces the active layer of carrier, and obtain active layer to the microwave signal of the second preset energy with through insulating barrier irradiation
Reflected energy.
It should be understood by those skilled in the art that, embodiments of the invention can be provided as method, system or computer program
Product.Therefore, the present invention can be using the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.And, the present invention can be used and wherein include the computer of computer usable program code at one or more
The computer program implemented in usable storage medium (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.) is produced
The form of product.
The present invention is the flow with reference to method according to embodiments of the present invention, equipment (system) and computer program product
Figure and/or block diagram are described.It should be understood that every first-class during flow chart and/or block diagram can be realized by computer program instructions
The combination of flow and/or square frame in journey and/or square frame and flow chart and/or block diagram.These computer programs can be provided
The processor of all-purpose computer, special-purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce
A raw machine so that produced for reality by the instruction of computer or the computing device of other programmable data processing devices
The device of the function of being specified in present one flow of flow chart or multiple one square frame of flow and/or block diagram or multiple square frames.
These computer program instructions may be alternatively stored in can guide computer or other programmable data processing devices with spy
In determining the computer-readable memory that mode works so that instruction of the storage in the computer-readable memory is produced and include finger
Make the manufacture of device, the command device realize in one flow of flow chart or multiple one square frame of flow and/or block diagram or
The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that in meter
Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented treatment, so as in computer or
The instruction performed on other programmable devices is provided for realizing in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in individual square frame or multiple square frames.
, but those skilled in the art once know basic creation although preferred embodiments of the present invention have been described
Property concept, then can make other change and modification to these embodiments.So, appended claims are intended to be construed to include excellent
Select embodiment and fall into having altered and changing for the scope of the invention.
Obviously, those skilled in the art can carry out various changes and modification without deviating from essence of the invention to the present invention
God and scope.So, if these modifications of the invention and modification belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising these changes and modification.
Claims (10)
1. the electrical property feature method of testing of a kind of thin film transistor (TFT), it is characterised in that including：
After the active layer for forming thin film transistor (TFT) to be tested, using the first preset energy laser excitation described in active layer
Carrier is produced, while the microwave signal irradiation using the second preset energy produces the active layer of carrier, and institute is obtained
State reflected energy of the active layer to the microwave signal of second preset energy；
The reflected energy of the microwave signal according to the advance different active layer for gathering to second preset energy is brilliant with film
The corresponding relation of the electrical property feature value of body pipe, and the active layer for obtaining is to the microwave signal of second preset energy
Reflected energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
2. method according to claim 1, it is characterised in that the method also includes：
Reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of electrical property feature value.
3. method according to claim 2, it is characterised in that the material of the active layer is polysilicon；
Reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of electrical property feature value, including：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone, use
The laser of various different energy is irradiated, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while using the
The microwave signal irradiation of two preset energies produces the polysilicon of carrier, obtains the polysilicon pair of each electrical property feature test zone
The reflected energy of the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test zone
The electrical property feature value of thin film transistor (TFT)；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave signal of the second preset energy
Reflected energy, obtain different active layers to the reflected energy of the microwave signal of the second preset energy and the electricity of thin film transistor (TFT)
The corresponding relation of property characteristic value.
4. method according to claim 2, it is characterised in that the material of the active layer is non-crystalline silicon；
Reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of electrical property feature value, including：
Using the silane SiH of different flow4Electrical property feature test zone on multiple different sampling substrates formed non-crystalline silicon it
Afterwards, load is produced using the non-crystalline silicon of each electrical property feature test zone on the laser excitation of the first preset energy each sampling substrate
Stream, while the microwave signal irradiation using the second preset energy produces the non-crystalline silicon of carrier, obtains on each sampling substrate
Each electrical property feature test zone microwave signal of the non-crystalline silicon to the second preset energy reflected energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical on each sampling substrate
The electrical property feature value of the thin film transistor (TFT) in characteristic test region；
Electrical property feature value and non-crystalline silicon using each electrical property feature test zone on each sampling substrate of measurement is default to second
The reflected energy of the microwave signal of energy, obtain different active layers to the reflected energy of the microwave signal of the second preset energy with
The corresponding relation of the electrical property feature value of thin film transistor (TFT).
5. method according to claim 1, it is characterised in that formed thin film transistor (TFT) to be tested active layer it
Afterwards, carrier is produced using the laser excitation active layer of the first preset energy, including：
Formed after the insulating barrier of the covering active layer, the table of the insulating barrier is irradiated using the laser of the first preset energy
Face, excites the active layer to produce carrier with through the insulating barrier, while being shone using the microwave signal of the second preset energy
The surface of the insulating barrier is penetrated, the active layer of carrier is produced with through insulating barrier irradiation, and obtain the active layer pair
The reflected energy of the microwave signal of second preset energy.
6. the electrical property feature test device of a kind of thin film transistor (TFT), it is characterised in that including：
Microwave reflection energy harvesting unit, it is pre- using first for after the active layer for forming thin film transistor (TFT) to be tested
If active layer described in the laser excitation of energy produces carrier, while the microwave signal irradiation using the second preset energy produces load
The active layer of son is flowed, and obtains reflected energy of the active layer to the microwave signal of second preset energy；
Electrical property feature analytic unit, believes the microwave of second preset energy for the different active layer according to collection in advance
Number reflected energy and thin film transistor (TFT) electrical property feature value corresponding relation, and the active layer for obtaining is to described second
The reflected energy of the microwave signal of preset energy, analysis obtains the electrical property feature value of thin film transistor (TFT) to be tested.
7. device according to claim 6, it is characterised in that the device also includes collecting unit, is used for：
Reflected energy and thin film transistor (TFT) of the different active layers to the microwave signal of second preset energy are gathered in advance
The corresponding relation of electrical property feature value.
8. device according to claim 7, it is characterised in that the material of the active layer is polysilicon；
The collecting unit, specifically for：
After multiple electrical property feature test zones of sampling substrate form non-crystalline silicon, to each electrical property feature test zone, use
The laser of various different energy is irradiated, to form the polysilicon of different structure；
Carrier is produced using the polysilicon of each electrical property feature test zone of the laser excitation of the first preset energy, while using the
The microwave signal irradiation of two preset energies produces the polysilicon of carrier, obtains the polysilicon pair of each electrical property feature test zone
The reflected energy of the microwave signal of the second preset energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical property feature test zone
The electrical property feature value of thin film transistor (TFT)；
Using measurement each electrical property feature test zone electrical property feature value and polysilicon to the microwave signal of the second preset energy
Reflected energy, obtain different active layers to the reflected energy of the microwave signal of the second preset energy and the electricity of thin film transistor (TFT)
The corresponding relation of property characteristic value.
9. device according to claim 7, it is characterised in that the material of the active layer is non-crystalline silicon；
The sampling unit, specifically for：
Using the silane SiH of different flow4Electrical property feature test zone on multiple different sampling substrates formed non-crystalline silicon it
Afterwards, load is produced using the non-crystalline silicon of each electrical property feature test zone on the laser excitation of the first preset energy each sampling substrate
Stream, while the microwave signal irradiation using the second preset energy produces the non-crystalline silicon of carrier, obtains on each sampling substrate
Each electrical property feature test zone microwave signal of the non-crystalline silicon to the second preset energy reflected energy；
Formed after the source-drain electrode of thin film transistor (TFT), using electrical property feature test equipment, measure each electrical on each sampling substrate
The electrical property feature value of the thin film transistor (TFT) in characteristic test region；
Electrical property feature value and non-crystalline silicon using each electrical property feature test zone on each sampling substrate of measurement is default to second
The reflected energy of the microwave signal of energy, obtain different active layers to the reflected energy of the microwave signal of the second preset energy with
The corresponding relation of the electrical property feature value of thin film transistor (TFT).
10. device according to claim 6, it is characterised in that the microwave reflection energy harvesting unit, specifically for：
Formed after the insulating barrier of the covering active layer, the table of the insulating barrier is irradiated using the laser of the first preset energy
Face, excites the active layer to produce carrier with through the insulating barrier, while being shone using the microwave signal of the second preset energy
The surface of the insulating barrier is penetrated, the active layer of carrier is produced with through insulating barrier irradiation, and obtain the active layer pair
The reflected energy of the microwave signal of second preset energy.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109243992A (en) * | 2018-07-26 | 2019-01-18 | 华南理工大学 | A method of detection solwution method insulating layer TFT mass |
| CN115101437A (en) * | 2022-08-26 | 2022-09-23 | 合肥新晶集成电路有限公司 | Wafer testing method, testing device and wafer testing system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236099A (en) * | 2010-03-31 | 2011-11-09 | 富士胶片株式会社 | Electromagnetic wave information detection apparatus and electromagnetic wave information detection method |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
| CN105518843A (en) * | 2013-09-13 | 2016-04-20 | 株式会社神户制钢所 | Evaluation device for oxide semiconductor thin film |
| CN106057828A (en) * | 2016-08-12 | 2016-10-26 | 京东方科技集团股份有限公司 | Substrate, preparation method therefor, and display panel |
-
2017
- 2017-03-08 CN CN201710135521.1A patent/CN106910695A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102236099A (en) * | 2010-03-31 | 2011-11-09 | 富士胶片株式会社 | Electromagnetic wave information detection apparatus and electromagnetic wave information detection method |
| CN102313849A (en) * | 2010-06-30 | 2012-01-11 | 株式会社神户制钢所 | The evaluation method of oxide semiconductor thin-film and the method for quality control of oxide semiconductor thin-film |
| CN105518843A (en) * | 2013-09-13 | 2016-04-20 | 株式会社神户制钢所 | Evaluation device for oxide semiconductor thin film |
| CN106057828A (en) * | 2016-08-12 | 2016-10-26 | 京东方科技集团股份有限公司 | Substrate, preparation method therefor, and display panel |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109243992A (en) * | 2018-07-26 | 2019-01-18 | 华南理工大学 | A method of detection solwution method insulating layer TFT mass |
| CN109243992B (en) * | 2018-07-26 | 2020-10-27 | 华南理工大学 | Method for detecting quality of insulating layer prepared by solution method in TFT |
| CN115101437A (en) * | 2022-08-26 | 2022-09-23 | 合肥新晶集成电路有限公司 | Wafer testing method, testing device and wafer testing system |
| CN115101437B (en) * | 2022-08-26 | 2024-02-06 | 合肥新晶集成电路有限公司 | Wafer testing method, testing device and wafer testing system |
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