CN104242825B - CMOS down-conversion mixers - Google Patents
CMOS down-conversion mixers Download PDFInfo
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- CN104242825B CN104242825B CN201310237459.9A CN201310237459A CN104242825B CN 104242825 B CN104242825 B CN 104242825B CN 201310237459 A CN201310237459 A CN 201310237459A CN 104242825 B CN104242825 B CN 104242825B
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Abstract
The invention discloses a kind of CMOS down-conversion mixers, including radio-frequency differential input circuit and on-off circuit, it is connected between the positive and reversed-phase output and supply voltage of on-off circuit by resistance and the PMOS load circuit in parallel formed, the grid of the PMOS of load circuit is all connected by control voltage so as to adjusting the load impedance of load circuit.The drain electrode of two NMOS mutual conductance pipes of radio-frequency differential input circuit is respectively coupled a constant-current source, and source electrode connects a LC parallel circuits jointly.The present invention can improve gain and realize adjustable gain, can improve the linearity and noiseproof feature, can reduce operating voltage.
Description
Technical field
The present invention relates to a kind of semiconductor integrated circuit, more particularly to a kind of CMOS down-conversion mixers.
Background technology
The function of frequency transformation is mainly completed in transceiver radio frequency (RF) front end in itself, and receiver radio frequency front end will
The radiofrequency signal received is converted into baseband signal, and the baseband signal that emitter radio-frequency front-end will be launched is converted into radio frequency letter
Number, frequency translation function is completed by frequency mixer.Frequency mixer is the important module in RF front-end circuit, a kind of its non-linear electricity
Road, frequency translation function is completed by circuit non-linear in itself.Down-conversion mixer becomes the RF received a signal
Change a relatively low frequency, referred to as intermediate frequency into(IF).It can be seen that multiplication is generated at the frequency of input signal and place and difference on the frequency
Output signal, their amplitude is proportional to RF and local oscillation signal(LO)The product of amplitude.Therefore, if LO amplitudes are constant, that
Any amplitude modulation has all passed to IF signals in RF signals.
Ambipolar double balanced mixer(Gilbert multipliers)Possess preferable LO-RF, RF-IF, LO-IF port isolation,
Therefore in the design frequently with this structure.Fig. 1 is the circuit diagram of existing CMOS Gilbert down-conversion mixers;Gilbert multiplies
Musical instruments used in a Buddhist or Taoist mass includes:
The source of the radio-frequency differential input circuit being made up of NMOS tube 101 and NMOS tube 102, NMOS tube 101 and NMOS tube 102
Pole links together and linked together with the current source that is made up of NMOS tube 103.The grid of NMOS tube 101 and NMOS tube 102
Differential radio frequency voltage signal a RFP or RFN are connected respectively.The source ground of NMOS tube 103, grid connect bias voltage
Vbiasn.Radio-frequency differential input circuit produces in the drain electrode of NMOS tube 101 and NMOS tube 102 include radio frequency voltage signal respectively
The current radio frequency signal of RFP or RFN frequency.
The on-off circuit being made up of NMOS tube 104, NMOS tube 105, NMOS tube 106 and NMOS tube 107, the He of NMOS tube 104
Drain electrode of the source electrode of NMOS tube 105 all with NMOS tube 101 is connected, and the source electrode of NMOS tube 106 and NMOS tube 107 is all and NMOS tube
102 drain electrode is connected, and the grid of NMOS tube 104 and NMOS tube 107 all connects a difference local oscillation signal LOP, the He of NMOS tube 105
The grid of NMOS tube 106 all meets another difference local oscillation signal LON.The drain electrode of NMOS tube 104 and NMOS tube 106 is connected and conduct
One differential intermediate frequency IFP output end, the drain electrode of NMOS tube 105 and NMOS tube 107 are connected and are used as in another difference
Frequency signal IFN output end.It is also associated with loading between the drain electrode of NMOS tube 104 and NMOS tube 106 and power supply, NMOS tube 105
It is also associated with loading between the drain electrode of NMOS tube 107 and power supply.The frequency of differential intermediate frequency is difference local oscillation signal and difference
Divide the difference on the frequency of radio frequency voltage signal.
Existing CMOS Gilbert down-conversion mixers as shown in Figure 1 compare for single balance mixer, isolation
Can be good, the isolation performance of especially local oscillator to intermediate frequency port improves to some extent, and is that the range of linearity is larger in addition, but with technique
Further development and the expansion of application field, propose more application demands to the performance of frequency mixer, objectively require higher
The frequency mixer of performance.
The content of the invention
The technical problems to be solved by the invention are to provide a kind of CMOS down-conversion mixers, can improve gain and realize increasing
Benefit is adjustable, can improve the linearity and noiseproof feature, can reduce operating voltage.
In order to solve the above technical problems, CMOS down-conversion mixers provided by the invention include:
Radio-frequency differential input circuit, including the first NMOS tube and the second NMOS tube, first NMOS tube and described second
The grid of NMOS tube connects two differential radio frequency voltage signals as two rf inputs and respectively, first NMOS tube and
The source electrode of second NMOS tube links together, and is penetrated described in the drain electrode conduct of first NMOS tube and second NMOS tube
Two output ends of frequency Differential input circuit and respectively output and the differential radio frequency voltage signal frequency identical two-pass DINSAR
Current radio frequency signal.
On-off circuit, the on-off circuit include two first switch branch roads and second that are symmetrical and being fully differential structure and opened
The control terminal of pass branch road, the first switch branch road and the second switch branch road is respectively coupled two difference local oscillation signals,
The input of the first switch branch road connects the draining of first NMOS tube, the connection of the input of the second switch branch road
The positive output end of the drain electrode of second NMOS tube, the first switch branch road and the second switch branch road links together
And the positive phase signals of output difference voltage intermediate frequency signal, the anti-phase output of the first switch branch road and the second switch branch road
End links together and the inversion signal of output difference voltage intermediate frequency signal.
Is connected between the positive output end and supply voltage of the first switch branch road and the second switch branch road
Have second between the reversed-phase output and supply voltage of one load circuit, the first switch branch road and the second switch branch road
Load circuit.
First load circuit is formed in parallel by first resistor and the first PMOS, the first resistor and described first
The drain electrode of PMOS connects and connects the positive output end of two switching branches, the first resistor and first PMOS
Source electrode connect and connect supply voltage.
Second load circuit is formed in parallel by second resistance and the second PMOS, the second resistance and described second
The drain electrode of PMOS connects and connects the reversed-phase output of two switching branches, the second resistance and second PMOS
Source electrode connect and connect supply voltage.
The first resistor is identical with the resistance of the second resistance, first PMOS and second PMOS
Structure is identical, and the grid of first PMOS and second PMOS all connects the first control voltage, by described in regulation
The load of first load circuit and second load circuit described in the big minor adjustment of first control voltage, described in realization
The gain-adjusted of CMOS down-conversion mixers.
It is that CMOS down-conversion mixers also include further to improve:First constant-current source, it is connected to first NMOS tube
Between drain electrode and supply voltage, first constant-current source is used to release to the direct current of first NMOS tube, described in reduction
First switch branch current;Second constant-current source, it is connected between drain electrode and the supply voltage of second NMOS tube;Described second
Constant-current source is used to release to the direct current of second NMOS tube, reduces the second switch branch current.
It is that first constant-current source is made up of the 3rd PMOS further to improve, the drain electrode connection of the 3rd PMOS
The drain electrode of first NMOS tube, the source electrode connection supply voltage of the 3rd PMOS;Second constant-current source is by the 4th
PMOS forms, and the drain electrode of the 4th PMOS connects the drain electrode of second NMOS tube, the source electrode of the 4th PMOS
Connect supply voltage;3rd PMOS connects identical bias voltage with the grid of the 4th PMOS.
Further improving is, the radio-frequency differential input circuit also includes a LC parallel circuits, the LC parallel circuits by
First electric capacity and the first inductance in parallel form, and the first end of first electric capacity and first inductance links together and connected
Second end of the source electrode of first NMOS tube and second NMOS tube, first electric capacity and first inductance is connected to
Together and it is grounded.
Further improving is, the on-off circuit includes the 3rd NMOS tube, the 4th NMOS tube, the 5th NMOS tube and the 6th
NMOS tube.
The first switch branch route the 3rd NMOS tube and the 4th NMOS tube composition, the second switch branch road
It is made up of the 5th NMOS tube and the 6th NMOS tube.
3rd NMOS tube is connected with the source electrode of the 4th NMOS tube and connects the drain electrode of first NMOS tube;
5th NMOS tube is connected with the source electrode of the 6th NMOS tube and connects the drain electrode of second NMOS tube;Described 3rd
Input of the source electrode of NMOS tube and the 4th NMOS tube as the first switch branch road, the 5th NMOS tube and described
Input of the source electrode of 6th NMOS tube as the second switch branch road.
The grid of 3rd NMOS tube and the 6th NMOS tube all connects the difference local oscillation signal of identical one,
The grid of 4th NMOS tube and the 5th NMOS tube all connects identical another described difference local oscillation signal;Described
The grid of three NMOS tubes and the 4th NMOS tube forms the control terminal of the first switch branch road, the 5th NMOS tube and institute
The grid for stating the 6th NMOS tube forms the control terminal of the second switch branch road.
The drain electrode of 3rd NMOS tube and the 5th NMOS tube links together and exports the difference voltage of intermediate frequency
The positive phase signals of signal, the drain electrode of the 4th NMOS tube and the 6th NMOS tube link together and exported in the difference
The inversion signal of frequency voltage signal;The drain electrode of 3rd NMOS tube and the 5th NMOS tube is respectively as the first switch
The positive output end of branch road and the second switch branch road, the drain electrode of the 4th NMOS tube and the 6th NMOS tube are made respectively
For the first switch branch road and the reversed-phase output of the second switch branch road.
The present invention can obtain following beneficial effect:
1st, the setting of the invention by by resistance and PMOS the first load circuit and the second load circuit in parallel formed,
The working condition of PMOS and resistance value can be adjusted by the first control voltage being arranged on the grid of PMOS, so as to
The resistance value of whole first load circuit or the second load circuit can be adjusted, so as to realize the adjustable gain of circuit.
2nd, the present invention, can be at two of radio-frequency differential input circuit by the setting of the first constant-current source and the second constant-current source
Under conditions of the electric current of NMOS tube is constant, the electric current of each transistor of on-off circuit is reduced, so as to reduce on-off circuit
The overdrive voltage of local oscillation signal, so as to effectively improve the voltage conversion gain of circuit and lift the headroom voltage of circuit.
3rd, the present invention passes through the settings of LC parallel circuits, using the teaching of the invention it is possible to provide higher RF impedance is so as to improving the line of circuit
Property degree, while LC parallel circuits do not consume extra direct current pressure drop and do not introduce significant noise, so as to improve circuit
Noiseproof feature, and the operating voltage of circuit can be reduced.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description:
Fig. 1 is the circuit diagram of existing ambipolar double flat weighing apparatus CMOS down-conversion mixers;
Fig. 2 is the circuit diagram of CMOS down-conversion mixers of the embodiment of the present invention.
Embodiment
As shown in Fig. 2 being the circuit diagram of CMOS down-conversion mixers of the embodiment of the present invention, become under CMOS of the embodiment of the present invention
Frequency mixer includes:
Radio-frequency differential input circuit, it is made up of the first NMOS tube MN1 and the second NMOS tube MN2, the first NMOS tube MN1
Two differential radio frequency voltage signal RFP are connected as two rf inputs and respectively with the grid of the second NMOS tube MN2
And RFN, the first NMOS tube MN1 and the second NMOS tube MN2 source electrode link together, the first NMOS tube MN1
With the second NMOS tube MN2 drain electrode as the radio-frequency differential input circuit two output ends and respectively output with it is described
Differential radio frequency voltage signal RFP and RFN frequency identical two-pass DINSAR current radio frequency signal.
The radio-frequency differential input circuit also includes a LC parallel circuits, and the LC parallel circuits are by the first electric capacity C and
One inductance L is formed in parallel, and the first electric capacity C and the first inductance L first end link together and connects described first
NMOS tube MN1 and the second NMOS tube MN2 source electrode, the first electric capacity C and the first inductance L the second end are connected to
Together and it is grounded.
On-off circuit, the on-off circuit include two first switch branch roads and second that are symmetrical and being fully differential structure and opened
Close branch road.The first switch branch route the 3rd NMOS tube MN3 and the 4th NMOS tube MN4 compositions, the second switch branch route
5th NMOS tube MN5 and the 6th NMOS tube MN6 compositions.
The 3rd NMOS tube MN3 is connected with the source electrode of the 4th NMOS tube MN4 and connects first NMOS tube
MN1 drain electrode;The 5th NMOS tube MN5 is connected with the source electrode of the 6th NMOS tube MN6 and connects the 2nd NMOS
Pipe MN2 drain electrode;The 3rd NMOS tube MN3 and the 4th NMOS tube MN4 source electrode is as the first switch branch road
Input of input, the 5th NMOS tube MN5 and the 6th NMOS tube MN6 source electrode as the second switch branch road
End.
The 3rd NMOS tube MN3 and the 6th NMOS tube MN6 grid all connects the difference sheet of identical one
Signal LOP, the 4th NMOS tube MN4 and the 5th NMOS tube MN5 grid of shaking all connects identical another described difference
Divide local oscillation signal LON;The 3rd NMOS tube MN3 and the 4th NMOS tube MN4 grid forms the first switch branch road
Control terminal, the 5th NMOS tube MN5 and the 6th NMOS tube MN6 grid forms the control of the second switch branch road
End.
The 3rd NMOS tube MN3 and the 5th NMOS tube MN5 drain electrode links together and exported in the difference
The positive phase signals IFP of frequency voltage signal, the 4th NMOS tube MN4 and the 6th NMOS tube MN6 drain electrode link together
And export the inversion signal IFN of the difference voltage intermediate frequency signal;The 3rd NMOS tube MN3 and the 5th NMOS tube MN5
Drain electrode respectively as the first switch branch road and the positive output end of the second switch branch road, the 4th NMOS tube
MN4 and the 6th NMOS tube MN6 drain electrode are anti-phase respectively as the first switch branch road and the second switch branch road
Output end.
Connected between the first switch branch road and the positive output end and supply voltage AVDD of the second switch branch road
Have the first load circuit, the reversed-phase output and supply voltage AVDD of the first switch branch road and the second switch branch road it
Between have the second load circuit.
First load circuit is formed in parallel by first resistor RL1 and the first PMOS MP1, the first resistor RL1
Drain electrode with the first PMOS MP1 connects and meets the positive output end of two switching branches, the first resistor RL1
Connected with the source electrode of the first PMOS MP1 and meet supply voltage AVDD.
Second load circuit is formed in parallel by second resistance RL2 and the second PMOS MP2, the second resistance RL2
Drain electrode with the second PMOS MP2 connects and meets the reversed-phase output of two switching branches, the second resistance RL2
Connected with the source electrode of the second PMOS MP2 and meet supply voltage AVDD.
The first resistor RL1 is identical with the resistance of the second resistance RL2, the first PMOS MP1 and described
Two PMOS MP2 structure is identical, and the first PMOS MP1 and the second PMOS MP2 grid all connect the first control
Voltage Vc processed, the first control voltage Vc can control the first PMOS MP1 and the second PMOS MP2 work
State and resistance sizes, thus by adjust the first control voltage Vc be sized to adjust first load circuit and
The load of second load circuit, realize the gain-adjusted of the CMOS down-conversion mixers.
CMOS down-conversion mixers also include:First constant-current source, it is connected to drain electrode and the power supply of the first NMOS tube MN1
Between voltage AVDD, first constant-current source is used to release to the direct current of the first NMOS tube MN1, reduces described first
Switching branches electric current;Second constant-current source, it is connected between drain electrode and the supply voltage AVDD of the second NMOS tube MN2;It is described
Second constant-current source is used to release to the direct current of the second NMOS tube MN2, reduces the second switch branch current.Preferably
For first constant-current source is made up of the 3rd PMOS MP3, and the drain electrode of the 3rd PMOS MP3 connects the first NMOS
Pipe MN1 drain electrode, the source electrode connection supply voltage AVDD of the 3rd PMOS MP3;Second constant-current source is by the 4th PMOS
Pipe MP4 is formed, and the drain electrode of the 4th PMOS MP4 connects the drain electrode of the second NMOS tube MN2, the 4th PMOS
MP4 source electrode connection supply voltage AVDD;The 3rd PMOS MP3 connects identical with the grid of the 4th PMOS MP4
Bias voltage.
Frequency mixer is the important module in RF front-end circuit, and it is a kind of nonlinear circuit, by circuit non-in itself
It is linear to complete frequency translation function.The radio frequency that down-conversion mixer receives one(RF)Signal be transformed into a frequency compared with
Low intermediate frequency(IF)Signal.The amplitude of intermediate-freuqncy signal is proportional to RF signals and local oscillator(LO)The product of signal amplitude.Therefore, if
LO signal amplitudes are constant, then any amplitude modulation has all passed to IF signals in RF signals.Mixing based on multiplication function
The usual better performances of device, three ports are respectively connecting to because the two-way of frequency mixer is inputted and exported all the way in addition, three
Individual signal is that the isolation between RF, LO, IF signal is preferable.Because CMOS can preferably work on off state, it is possible to achieve
The multiplier of excellent performance based on switch.It is assumed that the transistor of local oscillator driving is operated in complete switch switching state, then
The conversion gain of frequency mixer can be obtained.Based on above-mentioned it is assumed that differential output current may be considered in the embodiment of the present invention
One NMOS tube MN1 and the second NMOS tube MN2 leakage current are multiplied by the result of unit amplitude square wave.If output is terminated with load electricity
Hinder RL, then voltage conversion gain is
Pass through formula(1)Understand, if to improve the gain of frequency mixer, mutual conductance radio frequency input pipe i.e. first can be improved
NMOS tube MN1 and the second NMOS tube MN2 mutual conductance gm, load resistance RL, local oscillation signal amplitude VLO, it is the 3rd to reduce switching tube
NMOS tube MN3, the 4th NMOS tube MN4, the 5th NMOS tube MN5 and the 6th NMOS tube MN6 overdrive voltage are(Vgs-Vt)sw.But
It is to improve mutual conductance gmNeed to consume power consumption, electric current increase can influence noise;The amplitude V of local oscillation signalLOExcessive, switch tube is to i.e.
The parasitic capacitance discharge and recharge of the common source node of first switch branch road or second switch branch road, big local oscillation signal are also easy to cause and let out
Leakage, so by improving mutual conductance gmWith local oscillation signal amplitude VLOMethod all have a negative impact to improve gain.It is of the invention real
Apply by improving two constant-current sources being made up of the 3rd PMOS M3 and the 4th PMOS M4 in example, in the first NMOS tube MN1 and
In the case that second NMOS tube MN2 electric currents are constant, the electric current for flowing through switching tube pair reduces, overdrive voltage(Vgs-Vt)swReduce,
It is helpful to improving gain so in the case where not causing big parasitism and the size constancy of switching tube, parasitic capacitance are constant,
It is simultaneously favourable to alleviating headroom voltage.
More directly effective method is that the method for the size for changing load resistance RL realizes voltage in the embodiment of the present invention
The adjustment of conversion gain, as shown in Figure 2, the load resistance RL in the embodiment of the present invention are the first load circuit and the second load
Circuit, wherein first load circuit is formed in parallel by first resistor RL1 and the first PMOS MP1, the second load circuit by
Second resistance RL2 and the second PMOS MP2 are formed in parallel, by adjusting the first PMOS MP1 and second PMOS
First control voltage Vc of MP2 grid connection, can control the first PMOS MP1's and the second PMOS MP2
Working condition and resistance sizes, so as to adjust the load of first load circuit and second load circuit,
Realize the gain-adjusted of the CMOS down-conversion mixers.
In addition, in the embodiment of the present invention, radio-frequency differential input circuit also includes a LC parallel circuits, and LC parallel circuits can carry
Firing frequency impedance is so as to improving the linearity while not consume extra direct current pressure drop and do not introduce significant noise.
Than traditional Gilbert frequency mixers, circuit of the embodiment of the present invention requires to reduce to supply voltage, there is provided variable
Gain selection, while realize the preferable linearity and noiseproof feature.
The present invention is described in detail above by specific embodiment, but these not form the limit to the present invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, and these also should
It is considered as protection scope of the present invention.
Claims (4)
- A kind of 1. CMOS down-conversion mixers, it is characterised in that including:Radio-frequency differential input circuit, including the first NMOS tube and the second NMOS tube;First NMOS tube and the 2nd NMOS The grid of pipe connects two differential radio frequency voltage signals as two rf inputs and respectively, first NMOS tube and described The source electrode of second NMOS tube links together, and the drain electrode of first NMOS tube and second NMOS tube is as the radiofrequency difference It is divided to two output ends of input circuit and respectively output and the differential radio frequency voltage signal frequency identical two-pass DINSAR radio frequency Current signal;On-off circuit, the on-off circuit include two first switch branch roads and second switch branch symmetrical and for fully differential structure The control terminal of road, the first switch branch road and the second switch branch road is respectively coupled two difference local oscillation signals, described Input connection first NMOS tube of first switch branch road drains, described in the connection of the input of the second switch branch road The positive output end of the drain electrode of second NMOS tube, the first switch branch road and the second switch branch road links together and defeated Go out the reversed-phase output company of the positive phase signals of difference voltage intermediate frequency signal, the first switch branch road and the second switch branch road Be connected together and output difference voltage intermediate frequency signal inversion signal;It is negative that first is connected between the positive output end and supply voltage of the first switch branch road and the second switch branch road Circuit is carried, has the second load between the first switch branch road and the reversed-phase output and supply voltage of the second switch branch road Circuit;First load circuit is formed in parallel by first resistor and the first PMOS, the first resistor and the first PMOS The drain electrode of pipe connects and connects the source of the positive output end of two switching branches, the first resistor and first PMOS Pole connects and connects supply voltage;Second load circuit is formed in parallel by second resistance and the second PMOS, the second resistance and the 2nd PMOS The drain electrode of pipe connects and connects the source of the reversed-phase output of two switching branches, the second resistance and second PMOS Pole connects and connects supply voltage;The first resistor is identical with the resistance of the second resistance, the structure of first PMOS and second PMOS Identical, the grid of first PMOS and second PMOS all connects the first control voltage, by adjusting described first The size of control voltage controls working condition and the resistance sizes of first PMOS and second PMOS so as to adjust The load of first load circuit and second load circuit, realize that the gain of the CMOS down-conversion mixers is adjusted Section;The radio-frequency differential input circuit also includes a LC parallel circuits, and the LC parallel circuits are by the first electric capacity and the first inductance It is formed in parallel, the first end of first electric capacity and first inductance links together and connects first NMOS tube and institute State the source electrode of the second NMOS tube, the second end of first electric capacity and first inductance links together and is grounded.
- 2. CMOS down-conversion mixers as claimed in claim 1, it is characterised in that also include:First constant-current source, be connected between drain electrode and the supply voltage of first NMOS tube, first constant-current source be used for pair The direct current of first NMOS tube is released, and reduces the first switch branch current;Second constant-current source, it is connected between drain electrode and the supply voltage of second NMOS tube;Second constant-current source be used for pair The direct current of second NMOS tube is released, and reduces the second switch branch current.
- 3. CMOS down-conversion mixers as claimed in claim 2, it is characterised in that:First constant-current source is made up of the 3rd PMOS, and the drain electrode of the 3rd PMOS connects the leakage of first NMOS tube Pole, the source electrode connection supply voltage of the 3rd PMOS;Second constant-current source is made up of the 4th PMOS, and the drain electrode of the 4th PMOS connects the leakage of second NMOS tube Pole, the source electrode connection supply voltage of the 4th PMOS;3rd PMOS connects identical bias voltage with the grid of the 4th PMOS.
- 4. CMOS down-conversion mixers as claimed in claim 1, it is characterised in that:The on-off circuit includes the 3rd NMOS Pipe, the 4th NMOS tube, the 5th NMOS tube and the 6th NMOS tube;The first switch branch route the 3rd NMOS tube and the 4th NMOS tube composition, and the second switch branch route institute State the 5th NMOS tube and the 6th NMOS tube composition;3rd NMOS tube is connected with the source electrode of the 4th NMOS tube and connects the drain electrode of first NMOS tube;It is described 5th NMOS tube is connected with the source electrode of the 6th NMOS tube and connects the drain electrode of second NMOS tube;3rd NMOS The input of pipe and the source electrode of the 4th NMOS tube as the first switch branch road, the 5th NMOS tube and the described 6th Input of the source electrode of NMOS tube as the second switch branch road;The grid of 3rd NMOS tube and the 6th NMOS tube all connects the difference local oscillation signal of identical one, described The grid of 4th NMOS tube and the 5th NMOS tube all connects identical another described difference local oscillation signal;Described 3rd The grid of NMOS tube and the 4th NMOS tube forms the control terminal of the first switch branch road, the 5th NMOS tube and described The grid of 6th NMOS tube forms the control terminal of the second switch branch road;The drain electrode of 3rd NMOS tube and the 5th NMOS tube links together and exports the difference voltage intermediate frequency signal Positive phase signals, the drain electrode of the 4th NMOS tube and the 6th NMOS tube links together and exports the difference medium frequency electric Press the inversion signal of signal;The drain electrode of 3rd NMOS tube and the 5th NMOS tube is respectively as the first switch branch road With the positive output end of the second switch branch road, the drain electrode of the 4th NMOS tube and the 6th NMOS tube is respectively as institute State the reversed-phase output of first switch branch road and the second switch branch road.
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CN110504956A (en) * | 2019-07-05 | 2019-11-26 | 加驰(厦门)微电子股份有限公司 | A kind of broadband pre-divider that power consumption is adaptive |
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