CN104219899A - Method for manufacturing flexible copper-clad plate with metalized through hole - Google Patents
Method for manufacturing flexible copper-clad plate with metalized through hole Download PDFInfo
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- CN104219899A CN104219899A CN201410136108.3A CN201410136108A CN104219899A CN 104219899 A CN104219899 A CN 104219899A CN 201410136108 A CN201410136108 A CN 201410136108A CN 104219899 A CN104219899 A CN 104219899A
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- copper plate
- seed layer
- conductive seed
- pore structure
- coat copper
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/42—Plated through-holes or plated via connections
- H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
- H05K3/426—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in substrates without metal
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- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
The invention discloses a method for manufacturing a flexible copper-clad plate with a metalized through hole. The method comprises the following steps of forming a hole structure on a flexible organic film; forming conductive seed crystal layers on the wall of the hole structure and the surface of the flexible organic film; and forming metal conductor layers on the conductive seed crystal layers. By the method, the working procedure for manufacturing the flexible copper-clad plate with the metalized through hole can be simplified, and the conductive performance of the metalized through hole in the flexible copper-clad plate is improved.
Description
Technical field
The present invention relates to flexible electric circuit board manufacturing technology field, particularly relate to the method for a kind of manufacture with the flexibility coat copper plate of metallization via hole.
Background technology
Flexible electric circuit board (Flexible Printed Circuit Board, FPC), also referred to as flexible PCB, is be that the one that base material is made has high reliability and flexual printed circuit board with flexibility coat copper plate.Flexibility coat copper plate (Flexible Copper Clad Laminate, FCCL) is the copper-clad plate with good flexural property formed at the bonding certain thickness Copper Foil of the single or double of flexible organic film.Via hole (Via) is one of important composition of bilayer and multi-layer flexible circuit board.In order to make the layers of copper between each layer of flexible electric circuit board couple together, with regard to needing, metalized is carried out to the boring in flexible electric circuit board.
Prior art manufacture is first manufacture flexibility coat copper plate with the method for the flexibility coat copper plate of metallization via hole, further, flexibility coat copper plate manufactures metallization via hole, the detailed process wherein manufacturing flexibility coat copper plate is: form Copper Foil by rolling process or electrolysis, by certain technique, Copper Foil is pasted onto on flexible organic film again, just becomes flexibility coat copper plate; The detailed process that flexibility coat copper plate manufactures metallization via hole is: on flexibility coat copper plate, form pore structure by machine drilling, electroless copper or black holes technique is adopted to form conductive seed layer on the hole wall of pore structure, form metal conductor layer by plating again, and then on flexibility coat copper plate, form the metallization via hole of conduction.
But prior art manufacture has complex process, long flow path, the poorly conductive of via hole and high in cost of production shortcoming with the method for flexibility coat copper plate of metallization via hole.
Summary of the invention
The object of the invention is to propose the method for a kind of manufacture with the flexibility coat copper plate of metallization via hole, to simplify the operation of the flexibility coat copper plate manufactured with metallization via hole, and improve in flexibility coat copper plate the electric conductivity of the via hole that metallizes.
The invention provides the method for a kind of manufacture with the flexibility coat copper plate of metallization via hole, described method comprises:
Flexible organic film forms pore structure;
Conductive seed layer is formed at the hole wall of described pore structure and the surface of described flexible organic film;
Described conductive seed layer forms metal conductor layer.
Optionally, described flexible organic film comprises: polyimide film, liquid crystal polymer film, polyparabanic acid film, polystyrene film, pet film, polytetrafluoroethylene film or PEN film.
Optionally, the shape of described pore structure is circular or square.
Optionally, the described method forming pore structure on flexible organic film is selected from one or more in following group: machine drilling, punching, laser drilling, plasma etching and reactive ion etching.
Optionally, gas-phase deposition is adopted to form conductive seed layer at the hole wall of described pore structure and the surface of described flexible organic film.
Optionally, the thickness range of described conductive seed layer is 1 to 1000 nanometer.
Optionally, the square resistance of described conductive seed layer is less than 200 Ω/.
Optionally, the described method forming metal conductor layer in described conductive seed layer is selected from one or more in following group: plating, immersion plating and sputtering.
Optionally, the thickness range of described metal conductor layer is 1 to 100 micron.
Corresponding, present invention also offers the method for a kind of manufacture with the flexibility coat copper plate of metallization via hole, described method comprises:
Flexibility coat copper plate forms pore structure;
Gas-phase deposition is adopted to form conductive seed layer at the hole wall of described pore structure and the surface of described flexibility coat copper plate;
Described conductive seed layer forms metal conductor layer.
Optionally, described on flexibility coat copper plate, form that pore structure is selected from following group one or more: machine drilling, punching, laser drilling and plasma etching.
Optionally, the described method forming metal conductor layer in described conductive seed layer is selected from one or more in following group: plating, immersion plating and sputtering.
Corresponding, present invention also offers a kind of manufacture method of flexible electric circuit board, described method comprises manufacture that any embodiment of the present invention the provides method with the flexibility coat copper plate of metallization via hole.
The present invention proposes the method for a kind of manufacture with the flexibility coat copper plate of metallization via hole, flexibility coat copper plate is manufactured while directly can manufacturing metallization via hole on flexible organic film, simplify the operation of the flexibility coat copper plate manufactured with metallization via hole, improve in flexibility coat copper plate the electric conductivity of the via hole that metallizes.
Accompanying drawing explanation
Fig. 1 is the realization flow figure of the manufacture that provides of first embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole;
Fig. 2 a-Fig. 2 e is the manufacture that provides of the embodiment of the present invention with structure chart corresponding to the method step of the flexibility coat copper plate of metallization via hole;
Fig. 3 is the realization flow figure of the manufacture that provides of second embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole;
Fig. 4 is the realization flow figure of the manufacture that provides of third embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole.
Embodiment
Clearly, below in conjunction with drawings and Examples, the present invention is described in further detail for the technical problem solved for making the present invention, the technical scheme of employing and the technique effect that reaches.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
First embodiment
Fig. 1 is the realization flow figure of the manufacture that provides of first embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole.As shown in Figure 1, the method that the embodiment of the present invention provides comprises:
Step 101, flexible organic film forms pore structure.
Fig. 2 b is the manufacture that provides of the embodiment of the present invention with the corresponding in this step structure chart of the method for the flexibility coat copper plate of metallization via hole.With reference to Fig. 2 a and 2b, flexible organic film 201 as shown in Figure 2 a forms pore structure 211 as shown in Figure 2 b.
Preferably, described flexible organic film can comprise: polyimide film, liquid crystal polymer film, polyparabanic acid film, polystyrene film, pet film, polytetrafluoroethylene film or PEN film.
Preferably, the shape of described pore structure 211 can be circular or square.
Preferably, the described method forming pore structure 211 on flexible organic film 201 can be selected from one or more in following group: machine drilling, punching, laser drilling, plasma etching and reactive ion etching.Wherein, if adopt the mode of volume to volume to manufacture flexible electric circuit board, continuous hole knockout can be adopted to form pore structure 211, such as punching or continuous laser punching continuously, wherein, described laser drilling can be selected from one or more in following group: infrared laser punching, YAG laser drilling and ultraviolet laser drilling are reduction heat affected area, via edges is prevented to be subject to pyrolytic damage, preferred ultraviolet laser drilling; If adopt the mode of simply connected manufacture to manufacture flexible electric circuit board, preferably form pore structure 211 by the method for machine drilling or laser drill.Optionally, after flexible organic film 201 forms pore structure 211, clean is carried out to the hole of pore structure 211.
Step 102, forms conductive seed layer at the hole wall of described pore structure and the surface of described flexible organic film.
Fig. 2 c is the manufacture that provides of the embodiment of the present invention with the corresponding in this step structure chart of the method for the flexibility coat copper plate of metallization via hole.With reference to Fig. 2 c, form conductive seed layer 202 at the hole wall of described pore structure 211 and the surface of described flexible organic film 201.
Preferably, gas-phase deposition is adopted to form conductive seed layer at the hole wall of described pore structure 211 and the surface of described flexible organic film 201.
Wherein, gas-phase deposition can be selected from following group one or more: ion beam mutation, ion beam depositing, sputtering and evaporation, the mode of preferred sputtering, ion implantation or ion beam depositing, this is atom because their produce, ion, particulate fly to matrix with certain energy, good attachment can be formed with flexible organic film 201, and the deposit forming conductive seed layer is finer and smoother, defect is few, thus the hole-through conductive making it rear formation is better.The target material composition adopting gas-phase deposition to form conductive seed layer 202 at the hole wall of described pore structure 211 and the surface of described flexible organic film 201 is electric conducting material, wherein, described electric conducting material includes but not limited to various metal, alloy, carbon, conductive oxide, conductive carbide and conductive organic matter, be preferably the Metal and Alloy with flexible organic film 201 strong adhesion, as Ti, Cr, Ni, Cu, Ag, Au, Li, Be, Mg, Al, Mn, Fe, Co, Zn, Ga, Ge, C, Si, Y, V, Zr, Mo, Pd, Cd, Nb, In, Sn, Sb, Te, Ba, Ta, W, Pt, Tl, Pb, Bi and their binary, ternary and quaternary alloy.
Preferably, the thickness range of described conductive seed layer 202 is 1 to 1000 nanometer.
Preferably, the square resistance of described conductive seed layer 202 is less than 200 Ω/.
Step 103, described conductive seed layer forms metal conductor layer.
Fig. 2 d is the manufacture that provides of the embodiment of the present invention with the corresponding in this step structure chart of the method for the flexibility coat copper plate of metallization via hole.With reference to Fig. 2 d, described conductive seed layer 202 forms metal conductor layer 203.
Preferably, the described method forming metal conductor layer 203 in described conductive seed layer 202 is selected from one or more in following group: plating, immersion plating and sputtering.Wherein, electric plating method has the advantages that plated material scope is wide, plating speed is very fast and cost is low, and the material that plating adopts can comprise Cu, Ni, Sn, Au, Ag, Pt, Pd and their Bimary and trinary alloy; The method of immersion plating has easy to operate, but the feature that the alloy range of choice of plating conductor layer is narrower, adopt the method for immersion plating can plate the brazing filler metal alloy of low melting point, the various solder alloys that such as fusing point is less than 400 degrees Celsius, as Sn, SnPb, SnAgCu, SnCu, AuSn; The method of sputtering has the fast feature of sputtering rate, for some electric conducting materials, particularly metal and alloy, as Al, Cu, Ag, Sn, Ni, Au etc. and their alloy, the speed of sputtering can reach 100nm/min, and the method for sputtering thus can be adopted to carry out quick metal lining conductor layer.
In addition, the method for flexibility coat copper plate with metallization via hole that the embodiment of the present invention provides also is applicable to the situation (namely the thickness of metal conductor layer 203 is enough thick) that via hole tamps.Fig. 2 e is the manufacture that provides of the embodiment of the present invention with corresponding in this step another structure chart of the method for the flexibility coat copper plate of metallization via hole.With reference to Fig. 2 e, when via hole tamps, described conductive seed layer 202 forms metal conductor layer 203.Now, the pore structure 211 in Fig. 2 c is tamped.
Preferably, the thickness range of described metal conductor layer 203 is 1 to 100 micron.
Compared with prior art, the embodiment of the present invention manufactures flexibility coat copper plate while directly can manufacturing metallization via hole on flexible organic film, value is had more for industrial production, if the method that manufacturing enterprise adopts the embodiment of the present invention to provide, can not need to purchase flexibility coat copper plate in actual production, can directly purchase flexible organic film, and then manufacture flexibility coat copper plate manufacture metallization via hole in flexible organic film while, manufacturing cost can be reduced, simplify the operation of the flexibility coat copper plate manufactured with metallization via hole.
By way of example the scheme that the present embodiment provides is described below:
Such as, to the flexible organic film of ready rolling, adopt punching and Ultra-Violet Laser to punch continuously, to form pore structure on flexible organic film, the aperture of pore structure is minimum can be 25 μm, and pore structure can be square hole or circular hole; Further, adopt the mode of ion beam depositing, form the Cr layer of 10nm at the hole wall of described pore structure and the surface of described flexible organic film, as conductive seed layer, the square resistance of Cr layer is less than 100 Ω/; Further, on electroplating device, described conductive seed layer is electroplated the Cu layer of 5 to 18 μm, as metal conductor layer.Now, on flexible organic film, just define the flexibility coat copper plate with metallization via hole.
Or such as, to ready rolling and adhere to the flexible organic film of coil type mask, adopt the mode of plasma etching, and on flexible organic film, etch pore structure by coil type mask continuously, the aperture of pore structure is minimum can be 25 μm, and pore structure can be square hole or circular hole; Further, adopt the mode of sputtering, form the NiCr alloy-layer of 10 to 100nm at the hole wall of described pore structure and the surface of described flexible organic film, as conductive seed layer, the square resistance of NiCr alloy-layer is less than 100 Ω/; Further, on electroplating device, described conductive seed layer is electroplated the Cu layer of 5 to 18 μm, as metal conductor layer.Now, on flexible organic film, just define the flexibility coat copper plate with metallization via hole.
The manufacture that the present embodiment provides is with the method for the flexibility coat copper plate of metallization via hole, flexibility coat copper plate is manufactured while directly can manufacturing metallization via hole on flexible organic film, simplify the operation of the flexibility coat copper plate manufactured with metallization via hole, improve in flexibility coat copper plate the electric conductivity of the via hole that metallizes.Therefore the present invention industrially has a good application prospect, and the popularization of technology is convenient.
The embodiment of the present invention additionally provides a kind of manufacture method of flexible electric circuit board, the manufacture method of described flexible electric circuit board comprises the method for the flexibility coat copper plate manufactured with metallization via hole, wherein, the described manufacture manufacture that adopts any embodiment of the present invention to provide with the method for flexibility coat copper plate of metallization via hole is with the method for the flexibility coat copper plate of metallization via hole.
Second embodiment
Fig. 3 is the realization flow figure of the manufacture that provides of second embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole.As shown in Figure 3, the method that the embodiment of the present invention provides comprises:
Step 301, flexible organic film forms pore structure.
Preferably, described flexible organic film can comprise: polyimide film, liquid crystal polymer film, polyparabanic acid film, polystyrene film, pet film, polytetrafluoroethylene film or PEN film.
Preferably, the shape of described pore structure is circular or square.
Preferably, the described method forming pore structure on flexible organic film is selected from one or more in following group: machine drilling, punching, laser drilling and plasma etching.
Step 302, adopts gas-phase deposition to form conductive seed layer at the hole wall of described pore structure and the surface of described flexible organic film.
Preferably, the thickness range of described conductive seed layer is 1 to 1000 nanometer.
Preferably, the square resistance of described conductive seed layer is less than 200 Ω/.
Electroless copper or black holes technique is adopted to be formed compared with conductive seed layer with prior art, such scheme adopts gas-phase deposition to form conductive seed layer at the hole wall of described pore structure and the surface of described flexible organic film, shorten the time forming conductive seed layer, simplify the manufacturing process of conductive seed layer, and the conductive seed layer adhesive force formed is good, totally pollution-free, thus the hole-through conductive making it rear formation is better.
Step 303, described conductive seed layer forms metal conductor layer.
Preferably, the described method forming metal conductor layer in described conductive seed layer is selected from one or more in following group: plating, immersion plating and sputtering.
Preferably, the thickness range of described metal conductor layer is 1 to 100 micron.
The manufacture that the present embodiment provides is with the method for the flexibility coat copper plate of metallization via hole, conductive seed layer is formed at the hole wall of pore structure and the surface of flexible organic film by adopting gas-phase deposition, and then metal conductor layer is formed in conductive seed layer, the electric conductivity of the via hole that metallizes can be improve in flexibility coat copper plate.
3rd embodiment
Fig. 4 is the realization flow figure of the manufacture that provides of third embodiment of the invention with the method for the flexibility coat copper plate of metallization via hole.As shown in Figure 4, the method that the embodiment of the present invention provides comprises:
Step 401, flexibility coat copper plate forms pore structure.
Preferably, described on flexibility coat copper plate, form that pore structure is selected from following group one or more: machine drilling, punching, laser drilling, plasma etching and reactive ion etching.
Step 402, adopts gas-phase deposition to form conductive seed layer at the hole wall of described pore structure and the surface of described flexibility coat copper plate.
Electroless copper or black holes technique is adopted to be formed compared with conductive seed layer with prior art, such scheme adopts gas-phase deposition to form conductive seed layer at the hole wall of the pore structure of flexibility coat copper plate and the surface of described flexibility coat copper plate, the conductive seed layer adhesive force formed is good, totally pollution-free, and shorten the time forming conductive seed layer, simplify the manufacturing process of conductive seed layer, and then improve in flexibility coat copper plate the electric conductivity of the via hole that metallizes.
Step 403, described conductive seed layer forms metal conductor layer.
Preferably, the described method forming metal conductor layer in described conductive seed layer is selected from one or more in following group: plating, immersion plating and sputtering.
By way of example the scheme that the present embodiment provides is described below:
Such as, to the flexibility coat copper plate of ready rolling, adopt punching and Ultra-Violet Laser to punch continuously, to form pore structure on flexibility coat copper plate, the aperture of pore structure is minimum can be 25 μm, and pore structure can be square hole or circular hole; Further, continuous print plasma bombardment is adopted to carry out hole except glue and surface cleaning; Further, adopt the mode of ion beam depositing, form the Cr layer of 10nm and the Cu layer of 100nm at the hole wall of described pore structure and the surface of described flexibility coat copper plate, as conductive seed layer, its square resistance is less than 50 Ω/; Further, on electroplating device, described conductive seed layer is electroplated the Cu layer of 5 to 18 μm, as metal conductor layer.Now, the flexibility coat copper plate with metallization via hole is just defined.
Or such as, ready square flexibility coat copper plate is carried out lamination, and the bakelite plate attaching 2mm on the two sides of flexibility coat copper plate is bound, adopt the mode of machine drilling, flexibility coat copper plate forms pore structure, and the aperture of pore structure is minimum can be 50 μm; Further, flexibility coat copper plate is separated into simply connected, and carries out except glue process to the hole of pore structure; Further, adopt the mode of sputtering, form the Cu layer of 100nm at the hole wall of flexibility coat copper plate and the surface of described flexibility coat copper plate, as conductive seed layer, the square resistance of Cu layer is less than 50 Ω/; Further, utilize simply connected rack plating, described conductive seed layer is electroplated the Cu layer of 8 to 18 μm, as metal conductor layer.Now, the flexibility coat copper plate with metallization via hole is just defined.
Or such as, ready square flexibility coat copper plate is carried out laser drilling, to form pore structure on flexibility coat copper plate, the aperture of pore structure is minimum can be 50 μm; Further, they are separated into simply connected, and carry out except glue process to the hole of pore structure; Further, adopt the mode of sputtering, form the Ni layer of 200nm at the hole wall of flexibility coat copper plate and the surface of described flexibility coat copper plate, as conductive seed layer, the square resistance of Ni layer is less than 50 Ω/; Further, to flexibility coat copper plate coating photoresistance, and the position of exposure imaging exposed hole structure; Further, simply connected immersion plating is recycled (as immersed SnCu, SnA
gcu liquid alloy groove), described conductive seed layer forms tin coating, as metal conductor layer.Now, the flexibility coat copper plate with metallization via hole is just defined.
The manufacture that the present embodiment provides is with the method for the flexibility coat copper plate of metallization via hole, by forming pore structure on flexibility coat copper plate, gas-phase deposition is adopted to form conductive seed layer at the hole wall of described pore structure and the surface of described flexibility coat copper plate, and then metal conductor layer is formed in conductive seed layer, the manufacturing process of conductive seed layer can be simplified, and then improve in flexibility coat copper plate the electric conductivity of the via hole that metallizes.
Note, foregoing is only preferred embodiment of the present invention.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (13)
1. manufacture a method for the flexibility coat copper plate with metallization via hole, it is characterized in that, comprising:
Flexible organic film forms pore structure;
Conductive seed layer is formed at the hole wall of described pore structure and the surface of described flexible organic film;
Described conductive seed layer forms metal conductor layer.
2. method according to claim 1, it is characterized in that, described flexible organic film comprises: polyimide film, liquid crystal polymer film, polyparabanic acid film, polystyrene film, pet film, polytetrafluoroethylene film or PEN film.
3. method according to claim 1, is characterized in that, the shape of described pore structure is circular or square.
4. the method according to any one of claim 1-3, it is characterized in that, the described method forming pore structure on flexible organic film be selected from following group one or more: machine drilling, punching, laser drilling, plasma etching and reactive ion etching.
5. method according to claim 1, is characterized in that, adopts gas-phase deposition to form conductive seed layer at the hole wall of described pore structure and the surface of described flexible organic film.
6. method according to claim 1 or 5, it is characterized in that, the thickness range of described conductive seed layer is 1 to 1000 nanometer.
7. method according to claim 1 or 5, it is characterized in that, the square resistance of described conductive seed layer is less than 200 Ω/.
8. method according to claim 1, is characterized in that, the described method forming metal conductor layer in described conductive seed layer be selected from following group one or more: plating, immersion plating and sputtering.
9. the method according to claim 1 or 8, is characterized in that, the thickness range of described metal conductor layer is 1 to 100 micron.
10. manufacture a method for the flexibility coat copper plate with metallization via hole, it is characterized in that, comprising:
Flexibility coat copper plate forms pore structure;
Gas-phase deposition is adopted to form conductive seed layer at the hole wall of described pore structure and the surface of described flexibility coat copper plate;
Described conductive seed layer forms metal conductor layer.
11. methods according to claim 10, is characterized in that, described on flexibility coat copper plate, form that pore structure is selected from following group one or more: machine drilling, punching, laser drilling and plasma etching.
12. methods according to claim 10 or 11, is characterized in that, the described method forming metal conductor layer in described conductive seed layer be selected from following group one or more: plating, immersion plating and sputtering.
The manufacture method of 13. 1 kinds of flexible electric circuit boards, comprises the method for the manufacture described in any one of claim 1 to 12 with the flexibility coat copper plate of metallization via hole.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136108.3A CN104219899A (en) | 2014-04-04 | 2014-04-04 | Method for manufacturing flexible copper-clad plate with metalized through hole |
| PCT/CN2015/071762 WO2015149580A1 (en) | 2014-04-04 | 2015-01-28 | Method for manufacturing flexible copper clad laminate with metalized through-hole |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410136108.3A CN104219899A (en) | 2014-04-04 | 2014-04-04 | Method for manufacturing flexible copper-clad plate with metalized through hole |
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| Publication Number | Publication Date |
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| CN104219899A true CN104219899A (en) | 2014-12-17 |
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| CN201410136108.3A Pending CN104219899A (en) | 2014-04-04 | 2014-04-04 | Method for manufacturing flexible copper-clad plate with metalized through hole |
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| CN (1) | CN104219899A (en) |
| WO (1) | WO2015149580A1 (en) |
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| WO2015149580A1 (en) * | 2014-04-04 | 2015-10-08 | 珠海市创元电子有限公司 | Method for manufacturing flexible copper clad laminate with metalized through-hole |
| CN105873371A (en) * | 2015-11-06 | 2016-08-17 | 武汉光谷创元电子有限公司 | Substrate and manufacture method thereof |
| CN105873381A (en) * | 2015-11-06 | 2016-08-17 | 珠海市创元开耀电子材料有限公司 | HDI circuit board and manufacture method thereof |
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