CN104218780A - IGBT drive circuit based on 2ED020I12-F2 chip - Google Patents
IGBT drive circuit based on 2ED020I12-F2 chip Download PDFInfo
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- CN104218780A CN104218780A CN201410528364.7A CN201410528364A CN104218780A CN 104218780 A CN104218780 A CN 104218780A CN 201410528364 A CN201410528364 A CN 201410528364A CN 104218780 A CN104218780 A CN 104218780A
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- 2ed020i12
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Abstract
The invention relates to an IGBT drive circuit based on a 2ED020I12-F2 chip; the novel IGBT drive circuit designed by using the 2ED020I12-F2 chip provided by the Infineon Corporation can simultaneously drive an upper bridge arm and a lower bridge arm of an inverter circuit; the three-phase bridge type inverter circuit only use a power supply, the power supply is provided to the 2ED020I12-F2 chip as a control power supply and a drive power supply after being subjected to voltage reduction and isolation by using a voltage reduction chip and a DC-DC power supply module, and the 2ED020I12-F2 chip monitors voltage of the power supply and working current of the IGBT; and therefore, circuit is simplified, cost is reduced, and volume of the device is greatly reduced. Compared with the traditional drive circuit, the IGBT drive circuit is free of being externally connected to a current sensor for obtaining an overcurrent signal and transmitting to the drive chip to close drive output, complexity in circuit design is reduced to a certain degree, circuit design is simplified, and system reliability is improved.
Description
Technical field
The present invention relates to a kind of power switch tube drives circuit, particularly a kind of IGBT drive circuit based on 2ED020I12-F2 chip.
Background technology
Development along with power electronic technology, various switching devices obtain applying more and more widely as power MOSFET, IGBT constant power switching device, because IGBT has, be easy to drive, peak current capacity is large, self-switching-off capability, switching frequency high, is power electronic device of new generation with the fastest developing speed at present.Wherein the driving of IGBT and protection are one of key technologies in its application.
The drive integrated circult of most adopts the mode of directly driving or isolation drive.The integrated drive chips of isolation drive, as EXB841 series TLP250 etc., the feature of this chip is to drive single power tube, Qie Mei road drives and all wants one group of independently power supply, has increased the complexity of power circuit and drive circuit design.
IGBT is as product core component, the whether reliable and secure operation that is being related to whole equipment of its drive circuit, and drive circuit affect IGBT on-state voltage drop, switching loss, bear circuital current voltage time and
du cE / dtetc. parameter, determined static state and the dynamic operational behaviour of IGBT.Require in actual applications dynamic driving ability strong, have enough input and output electricity isolating powers, drive circuit is simple as far as possible etc.
Therefore, be devoted to the research of IGBT drive circuit and application circuit thereof, develop and there is high performance IGBT drive circuit, there is important theory significance and actual application value, will have a tremendous social and economic benefits.
Summary of the invention
The present invention be directed to present IGBT drive circuit and only can drive single power tube, and need the problem of independent current source, a kind of IGBT drive circuit based on 2ED020I12-F2 chip has been proposed, the novel IGBT driver module of 2ED020I12-F2 chip design that utilizes company of Infineon to produce, can drive upper and lower two brachium pontis of inverter circuit simultaneously, three-phase inverter bridge circuit only, with one group of power supply, has been simplified circuit, has reduced cost.
Technical scheme of the present invention is: a kind of IGBT drive circuit based on 2ED020I12-F2 chip, comprise Switching Power Supply, step-down chip, DC-DC modular power source, 2ED020I12-F2 device for power switching gate drivers, Switching Power Supply output is through the controlled signal power source of step-down chip, Switching Power Supply output, after DC-DC modular power source isolated buck, is exported two collector electrodes that positive and negative two-way driving power is connected to respectively upper and lower two brachium pontis push-pull output circuits in IGBT drive circuit; To two, determine level signal and through clamp diode and high-frequency filter capacitor, connect two input INHS+ pins of 2ED020I12-F2 chip respectively, two output OUTHS pins of 2ED020I12-F2 chip are connected to by resistance the push-pull circuit that two triodes form, and this recommends output voltage is between positive and negative two-way driving power voltage; Two CLAMP pins of 2ED020I12-F2 chip connect respectively two OUTHS pins, Real-Time Monitoring IGBT gate voltage; The VCC of 2ED020I12-F2 chip and VEE pin detect respectively control signal power supply, positive and negative two-way driving power upper-lower door voltage limit.
In the push-pull circuit that described two triodes form, between two transistor emitters, series diode prevents the reverse conducting of electric current, causes IGBT to mislead.
The DESATHS pin of described 2ED020I12-F2 chip detects and flows through IGBT electric current, when DESATHS pin detection electric current is excessive, 2ED020I12-F2 chip
pin is exported corresponding detection signal to controller, controller basis
pin output signal is blocked PWM output.
Beneficial effect of the present invention is: the IGBT drive circuit that the present invention is based on 2ED020I12-F2 chip, can drive upper and lower two brachium pontis of inverter circuit, three-phase inverter bridge circuit only, with one group of power supply, has reduced device volume greatly simultaneously, simplify circuit, reduce costs.The conventional ADS driving of comparing circuit, does not need external impressed current transducer to obtain over-current signal and is resent to and drives chip to close driver output, has reduced to a certain extent the complexity of circuit design, and circuit design is simplified, and has improved the reliability of system.
Accompanying drawing explanation
Fig. 1 is step-down chip LM275HV BUCK fundamental diagram in the present invention;
Fig. 2 is QA04 isolated from power pio chip fundamental diagram of the present invention;
Fig. 3 is the IGBT drive circuit figure that the present invention is based on 2ED020I12-F2;
Fig. 4 is PWM output waveform figure of the present invention.
Embodiment
The chip that the present invention uses is the 2ED020I12-F2 chip that company of German Infineon produces, 2ED020I12-F2 is a kind of binary channels high pressure, High-speed Electric die mould device for power switching gate drivers, there is bootstrapping floating power supply, drive circuit is simple, drive chip to drive inverter circuit upper and lower bridge arm simultaneously, and itself have consideration Dead Time.When chip is normally worked, the required pulse signal of upper and lower bridge arm is sent to respectively the 2nd pin INHS+ and the 12nd pin INLS+ can driven upper and lower bridge arm.
Size of current between the CE of IGBT substantially to CE between voltage be directly proportional.Due to the 20th pin DESATLS of 2ED020I12-F2 chip and the 30th pin DESATHS can the CE of sense switch pipe IGBT between voltage U
cEso, by detecting U
cEjust can judge whether IGBT has overcurrent.When DESATxx pin voltage surpasses 9V, close driver output, guarantee that like this IGBT is unlikely to overheated and burns out.In order not cause mistake protection, device also designs blanking time circuit, and it utilizes device inside high precise current source and external capacitive to realize.
Tri-kinds of voltages of relate to+15V of driving chip ,+5V ,-8V that the present invention is used, can be easy to obtain by Switching Power Supply and step-down chip.The design adopts single supply+15V design of powering, wherein the 7th pin VCC1HS of 2ED020I12-F2 chip and the 17th pin VCC1LS employing+5V power supply, by obtain+5V of LM275HV BUCK step-down chip as control signal power supply, as shown in Figure 1.Driver output level employing+15V and-8V duplex feeding, Switching Power Supply output is after DC-DC modular power source, output+15V and-8V is connected to respectively two collector electrodes of push-pull output circuit, by the insulating power supply with isolating transformer function, obtained, make like this control signal and Power supply all realize the electricity isolation of front and back levels.Fig. 2 for by QA04 isolated from power pio chip, obtain+15V ,-8V voltage schematic diagram, QA04 aims at IGBT driver and the DC-DC modular power source that designs, the feature with two groups of isolated from power, than normal power supplies product tape large capacitive load and have less isolation capacitance and the isolation voltage of Geng Gao more.
Fig. 3 is the IGBT driving circuit principle figure based on 2ED020I12-F2.2ED020I12-F2 application centreless transformer technology isolation signals side and power side, integrated as functions such as monitoring under-voltage locking, house dog, hard shutoff, soft shutoff, difference input, track to track output, Vce supersaturation detection, active Miller clampers.
Below the explanation brachium pontis work in conducting of all take is example.The input pattern of 2ED020I12-F2 can divide two kinds, a kind of for forward input is that high level is effective, at this moment needs INHS-pin to connect low level.Another kind of is Low level effective for oppositely inputting, and at this moment needs INHS+ pin to connect high level.When level signal is inputted, inside is limited by minimum pulse width, can eliminate like this high-frequency impulse and disturb.
In Fig. 3 circuit, by IN_T1 pin signal, after clamp diode D7 and D10, input 2ED020I12-F2, wherein IN_T1 pin is that drive plate connector is from external input signal PWM1, specifically can from Fig. 3, identify, two diodes can make input voltage clamper in the scope of 0～5V, and 6 pairs of input signals of capacitor C have the effect of High frequency filter.OUTHS output is connected to by R7 the push-pull circuit that triode T1 and T2 form, and this recommends output voltage for-8V～+ 15V, during output current maximum, can reach 16A, and driving force is very large.Wherein, between T1, T2 emitter, series diode D9 prevents the reverse conducting of electric current, causes IGBT to mislead.
2ED020I12-F2 inputs given level signal according to IN_T1 pin, determines the impulse waveform of output, monitors the CE both end voltage value of IGBT simultaneously.Under normal circumstances,
pin output high level, RDYHS pin output high level, triode T3 conducting, LED 0 is lighted, and shows that chip normally works.
If have short circuit or very large electric current to flow through IGBT, IGBT can enter undersaturated condition, and voltage rises rapidly.When DESATHS pin monitors magnitude of voltage higher than 9V, chip blocks rapidly driver output, and soft shutoff IGBT, to prevent that di/dt fast rise from producing high voltage; The feedback path of trigger device inside makes simultaneously
be output as low level, notification controller blocks PWM output.
In order to ensure IGBT, open reliably and turn-off, 2ED020I12-F2 detects supply power voltage, when the voltage of VCC1HS lower than the value of threshold voltage VULOL1 or VCC2HS the value lower than VULOL2, chip can quit work automatically, is in the lock state.Chip also can be monitored internal signal by house dog, judges whether signal transmission is normal.By observing LED O, judge the output state of RDYHS pin, learn that whether chip operation is normal.
2ED020I12-F2 is output as push pull mode, and inner MOSFET tube voltage drop is very low, so reduced power consumption when maximum current is exported, has improved the reliability of device application.
The structures shape of IGBT between the CG of IGBT and GE, there is an electric capacity
u cE although capacitance is very little, if bridge IGBT diode on can causing while opening lower bridge IGBT in half-bridge structure
du cE / dtvariation because there is an electric capacity between the CG of IGBT
c cG , so now can generation current
i cE =C cG du cE / dt.Electric current
i cE by Miller capacitor C
cG, gate electrode resistance, C
gEform current circuit, work as C
gEon the voltage turning-on voltage that is greater than IGBT will cause IGBT conducting, thereby cause the extreme case of pipe conducting simultaneously up and down.In order to eliminate the Miller effect, can pass through CLAMP pin Real-Time Monitoring IGBT gate voltage, when the voltage between GE surpasses 2V, device can be opened inner MOSFET automatically, to make
c gE electric charge discharges rapidly, Here it is Miller clamp circuit.
Fig. 4 is the output pulse waveform figure obtaining by actual motion.According to the IGBT drive circuit design that the present invention is based on 2ED020I12-F2 chip, the IGBT that can apply to 1200V drives, and by observing output waveform of the present invention, can be clear that the present invention can drive IGBT switching tube normally, practical requirement, solving practical problems.
Claims (3)
1. the IGBT drive circuit based on 2ED020I12-F2 chip, it is characterized in that, comprise Switching Power Supply, step-down chip, DC-DC modular power source, 2ED020I12-F2 device for power switching gate drivers, Switching Power Supply output is through the controlled signal power source of step-down chip, Switching Power Supply output, after DC-DC modular power source isolated buck, is exported two collector electrodes that positive and negative two-way driving power is connected to respectively upper and lower two brachium pontis push-pull output circuits in IGBT drive circuit; To two, determine level signal and through clamp diode and high-frequency filter capacitor, connect two input INHS+ pins of 2ED020I12-F2 chip respectively, two output OUTHS pins of 2ED020I12-F2 chip are connected to by resistance the push-pull circuit that two triodes form, and this recommends output voltage is between positive and negative two-way driving power voltage; Two CLAMP pins of 2ED020I12-F2 chip connect respectively two OUTHS pins, Real-Time Monitoring IGBT gate voltage; The VCC of 2ED020I12-F2 chip and VEE pin detect respectively control signal power supply, positive and negative two-way driving power upper-lower door voltage limit.
2. the IGBT drive circuit based on 2ED020I12-F2 chip according to claim 1, is characterized in that, in the push-pull circuit that described two triodes form, between two transistor emitters, series diode prevents the reverse conducting of electric current, causes IGBT to mislead.
3. the IGBT drive circuit based on 2ED020I12-F2 chip according to claim 1, it is characterized in that, the DESATHS pin of described 2ED020I12-F2 chip detects and flows through IGBT electric current, when DESATHS pin detection electric current is excessive, 2ED020I12-F2 chip
pin is exported corresponding detection signal to controller, controller basis
pin output signal is blocked PWM output.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410528364.7A CN104218780A (en) | 2014-10-09 | 2014-10-09 | IGBT drive circuit based on 2ED020I12-F2 chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410528364.7A CN104218780A (en) | 2014-10-09 | 2014-10-09 | IGBT drive circuit based on 2ED020I12-F2 chip |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579649A (en) * | 2017-09-13 | 2018-01-12 | 深圳市鹏源电子有限公司 | Drive device for power switch pipe |
| CN110086334A (en) * | 2019-05-30 | 2019-08-02 | 深圳可立克科技股份有限公司 | The driving circuit and driving method and energy storage device of metal-oxide-semiconductor bridge circuit |
| CN112713758A (en) * | 2020-12-26 | 2021-04-27 | 珠海格力电器股份有限公司 | Circuit and method capable of monitoring driving waveforms of upper tube and lower tube simultaneously on common ground |
| CN113037083A (en) * | 2021-03-11 | 2021-06-25 | 北华航天工业学院 | Hemisphere dynamic pressure motor three-phase square wave power driving device |
-
2014
- 2014-10-09 CN CN201410528364.7A patent/CN104218780A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107579649A (en) * | 2017-09-13 | 2018-01-12 | 深圳市鹏源电子有限公司 | Drive device for power switch pipe |
| CN110086334A (en) * | 2019-05-30 | 2019-08-02 | 深圳可立克科技股份有限公司 | The driving circuit and driving method and energy storage device of metal-oxide-semiconductor bridge circuit |
| CN112713758A (en) * | 2020-12-26 | 2021-04-27 | 珠海格力电器股份有限公司 | Circuit and method capable of monitoring driving waveforms of upper tube and lower tube simultaneously on common ground |
| CN113037083A (en) * | 2021-03-11 | 2021-06-25 | 北华航天工业学院 | Hemisphere dynamic pressure motor three-phase square wave power driving device |
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Application publication date: 20141217 |