CN104218779A - Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier - Google Patents

Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier Download PDF

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Publication number
CN104218779A
CN104218779A CN201410425610.6A CN201410425610A CN104218779A CN 104218779 A CN104218779 A CN 104218779A CN 201410425610 A CN201410425610 A CN 201410425610A CN 104218779 A CN104218779 A CN 104218779A
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China
Prior art keywords
igbt
optical
pulse
drive unit
phototiming
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Pending
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CN201410425610.6A
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Chinese (zh)
Inventor
胡鹤轩
邓路
张晔
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Hohai University HHU
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Hohai University HHU
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Priority to CN201410425610.6A priority Critical patent/CN104218779A/en
Publication of CN104218779A publication Critical patent/CN104218779A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a serially-connected insulated gate bipolar transistor IGBT gate electrode drive unit synchronizing method and system based on a Raman laser amplifier. The synchronizing method includes allowing a semiconductor laser to emit synchronizing pulses; performing Raman amplification on the optical synchronous pulses through an erbium doped fiber amplifier; after the optical synchronous pulses pass a filter and an optical power splitter, producing optical pulses as same as the serially-connected IGBT in number, and feeding the optical pulses into GDU (Gate Drive Units); allowing the GDU to convert the optical signals into electrical signals, and triggering or switching off the IGBT. The optical pulses of the synchronizing control signals are the same, synchronization can be guaranteed strictly, and reliable guarantee is provided for switching on and off the IGBT synchronously.

Description

Based on synchronous method and the system of the series IGBT gate-drive unit of raman laser amplifier
Technical field
The invention belongs to field of power electronics, especially a kind of synchronous method of the series IGBT gate-drive unit based on raman laser amplifier.
Background technology
Because electric device trends towards Large Copacity, low pressure grade is transformed into middle pressure grade; As 600-690v is transformed into 3000-3300V, if electric current is constant, capacity is by lifting more than 4 times.
The lifting of voltage is had higher requirement to Conventional switch devices, the withstand voltage of existing insulated gate bipolar transistor IGBT (Insulated Gate Bipolar Transistor) single tube is also very limited, far can not meet high pressure occasion, therefore switching device series connection must be used, first the direct serial connection technology of IGBT will ensure the synchronous of control signal, and must after passing through isolation, the delay between each signal is within the scope of an acceptable; Next will ensure turning on and off in process, and voltage is distributed on each device by average, and the voltage difference on each device must within a rational scope, otherwise can cause the breakdown or premature aging of some device.
Prior art is not because switching device adopts same control circuit, the powered Pulse Width Control of the light pulse that each laser produces, the time difference of final accumulation, causes the synchronism of control impuls to be difficult to ensure, cause a break-over of device too fast like this, and another device damage because bearing high pressure.
Summary of the invention
Goal of the invention a: object is to provide a kind of synchronous method of the series IGBT gate-drive unit based on raman laser amplifier, to solve the part or all of problem that prior art exists.
Technical scheme: a kind of synchronous method of the series IGBT gate-drive unit based on raman laser amplifier, comprises the steps:
Semiconductor laser sends phototiming pulse;
By erbium-doped optical fiber amplifier EDFA (Erbium-Doped Fiber Amplifier), Raman amplifiction is carried out to described phototiming pulse;
After filter and optical power distributor, produce the light pulse identical with series IGBT number, send into gate-drive unit GDU(Gate Drive Unit);
Light signal is transformed into the signal of telecommunication by GDU, triggers or turns off IGBT.
Further, present invention also offers a kind of synchro system of the series IGBT gate-drive unit based on raman laser amplifier, comprising the conductor laser for sending phototiming pulse half; For carrying out the erbium-doped optical fiber amplifier EDFA of Raman amplifiction to described phototiming pulse; For selecting the filter of specific optical frequency; And for the light pulse of characteristic frequency being divided into the optical power distributor of multichannel; Each GDU connects an optical power distributor, receives phototiming pulse and is converted into the signal of telecommunication, the break-make of control IGBT.
Beneficial effect: the present invention as the light impulse source of synchronous control signal from same pulse, can strict guarantee synchronous, for synchronous switching IGBT provides reliable guarantee.
Accompanying drawing explanation
Fig. 1 is the structural representation of the preferred embodiment of the present invention.
Embodiment
The synchro system that the present invention is based on the series IGBT gate-drive unit of raman laser amplifier comprises the laser, Erbium Doped Fiber Amplifiers EDFAs EDFA, optical filter, optical power distributor, photo-detector, the differential comparison amplifying circuit that are connected successively.
Its process is as follows: lock-out pulse is the pulse that a laser sends, through same erbium-doped optical fiber amplifier EDFA, same optical filter, again by optical power distributor by the gate-drive unit of pulse distribution to each IGBT, electric pulse is reverted to by photodetector, eventually pass through differential comparison circuit to amplify, the break-make of control IGBT.
Due to, the relative error of each pulse is only length difference and the generation of photo-detector transmission delay differences of optical fiber, and the light velocity is 300,000 kilometer per seconds, and the direct distance of each series connection valve body can not more than 10 meters, and the delay time error of generation can not be greater than 10ns.
Therefore, the direct serial connection technology of IGBT can be met and will ensure the synchronous of control signal, and must after passing through isolation, the requirement of the delay between each signal within the scope of an acceptable.
In a word, light pulse of the present invention is carried out amplifying, filtering, that light splitting carrys out strict guarantee is synchronous, synchronous absolute error can be disregarded, the method of synchronization is reliable, synchronization accuracy is high, the valve body that each valve control device can support nearly 400 IGBT directly to connect, realizes 400 IGBT and drives the Synchronization Control with control device.
More than describe the preferred embodiment of the present invention in detail; but the present invention is not limited to the detail in above-mentioned execution mode, within the scope of technical conceive of the present invention; can carry out multiple equivalents to technical scheme of the present invention, these equivalents all belong to protection scope of the present invention.
It should be noted that in addition, each the concrete technical characteristic described in above-mentioned embodiment, in reconcilable situation, can be combined by any suitable mode.In order to avoid unnecessary repetition, the present invention illustrates no longer separately to various possible compound mode.
In addition, also can carry out combination in any between various different execution mode of the present invention, as long as it is without prejudice to thought of the present invention, it should be considered as content disclosed in this invention equally.

Claims (2)

1., based on a synchronous method for the series IGBT gate-drive unit of raman laser amplifier, it is characterized in that, comprise the steps:
Semiconductor laser sends phototiming pulse;
By erbium-doped optical fiber amplifier EDFA, Raman amplifiction is carried out to described phototiming pulse;
After filter and optical power distributor, produce the light pulse identical with series IGBT number, send into GDU;
Light signal is transformed into the signal of telecommunication by GDU, triggers or turns off IGBT.
2. based on a synchro system for the series IGBT gate-drive unit of raman laser amplifier, it is characterized in that, comprising the conductor laser for sending phototiming pulse half; For carrying out the erbium-doped fiber amplifier of Raman amplifiction to described phototiming pulse; For selecting the filter of specific optical frequency; And for the light pulse of characteristic frequency being divided into the optical power distributor of multichannel; Each GDU connects an optical power distributor, receives phototiming pulse and is converted into the signal of telecommunication, the break-make of control IGBT.
CN201410425610.6A 2014-08-26 2014-08-26 Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier Pending CN104218779A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410425610.6A CN104218779A (en) 2014-08-26 2014-08-26 Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410425610.6A CN104218779A (en) 2014-08-26 2014-08-26 Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier

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CN104218779A true CN104218779A (en) 2014-12-17

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1447513A (en) * 2002-03-25 2003-10-08 哈尔滨九洲电气股份有限公司 Single-phase bridge type inverter in high voltage frequency converter
CN101478225A (en) * 2008-12-19 2009-07-08 中国电力科学研究院 Communication method by using series connection valve triggering signal of high voltage electric and electronic device
CN101888229A (en) * 2010-05-25 2010-11-17 中国电力科学研究院 Novel IGBT high-pressure series valve controlling and monitoring system
CN103715874A (en) * 2012-10-09 2014-04-09 富士电机株式会社 Gate driving circuit having a fault detecting circuit for a semiconductor switching device
CN103762832A (en) * 2014-01-03 2014-04-30 深圳市航天新源科技有限公司 Optical fiber driving type modular input series voltage division circuit
CN103869779A (en) * 2014-03-12 2014-06-18 南京南瑞继保电气有限公司 Communication framework and method suitable for modularized multi-level converter control system

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1447513A (en) * 2002-03-25 2003-10-08 哈尔滨九洲电气股份有限公司 Single-phase bridge type inverter in high voltage frequency converter
CN101478225A (en) * 2008-12-19 2009-07-08 中国电力科学研究院 Communication method by using series connection valve triggering signal of high voltage electric and electronic device
CN101888229A (en) * 2010-05-25 2010-11-17 中国电力科学研究院 Novel IGBT high-pressure series valve controlling and monitoring system
CN103715874A (en) * 2012-10-09 2014-04-09 富士电机株式会社 Gate driving circuit having a fault detecting circuit for a semiconductor switching device
CN103762832A (en) * 2014-01-03 2014-04-30 深圳市航天新源科技有限公司 Optical fiber driving type modular input series voltage division circuit
CN103869779A (en) * 2014-03-12 2014-06-18 南京南瑞继保电气有限公司 Communication framework and method suitable for modularized multi-level converter control system

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
杜庆波: "《光纤通信技术与设备》", 31 August 2012, article "光纤通信的基本器件" *

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