CN104218779A - Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier - Google Patents
Serially-connected IGBT gate electrode drive unit synchronizing method and system based on Raman laser amplifier Download PDFInfo
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- 238000001069 Raman spectroscopy Methods 0.000 title claims abstract description 13
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- 239000004065 semiconductor Substances 0.000 claims abstract description 5
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Abstract
本发明公开了一种基于拉曼激光放大器的串联绝缘栅双极晶体管IGBT门极驱动单元的同步方法及系统，其中，同步方法包括如下步骤：半导体激光器发出光同步脉冲；通过掺铒光纤放大器对所述光同步脉冲进行拉曼放大；经滤波器和光功分器后，产生和串联IGBT个数相同的光脉冲，送入门极驱动单元GDU；GDU将光信号转变成电信号，触发或关断IGBT。本发明作为同步控制信号的光脉冲源自同一脉冲，能够严格保证同步，为同步关断和开启IGBT提供可靠的保证。
The invention discloses a synchronization method and system of a series insulated gate bipolar transistor IGBT gate drive unit based on a Raman laser amplifier, wherein the synchronization method includes the following steps: a semiconductor laser emits an optical synchronization pulse; The optical synchronous pulse is amplified by Raman; after passing through the filter and optical power divider, the optical pulse with the same number as the series IGBT is generated, and sent to the gate drive unit GDU; the GDU converts the optical signal into an electrical signal, triggers or shuts off IGBT. The optical pulse used as the synchronous control signal in the invention is derived from the same pulse, which can strictly guarantee the synchronization and provide reliable guarantee for synchronously turning off and turning on the IGBT.
Description
技术领域 technical field
本发明属于电力电子领域，尤其是一种基于拉曼激光放大器的串联IGBT门极驱动单元的同步方法。 The invention belongs to the field of power electronics, in particular to a method for synchronizing a series-connected IGBT gate drive unit based on a Raman laser amplifier.
背景技术 Background technique
由于电力装置趋向于大容量，将低压等级转换到中压等级；如600-690v转换到3000-3300V，如果电流不变，容量将提升4倍以上。 As the power device tends to have a large capacity, the low-voltage level is converted to the medium-voltage level; for example, if 600-690v is converted to 3000-3300V, if the current remains unchanged, the capacity will increase by more than 4 times.
电压的提升对传统开关器件提出了更高的要求，现有绝缘栅双极晶体管IGBT（Insulated Gate Bipolar Transistor）单管的耐压值还非常有限，远不能满足高压场合，因此必须将开关器件串联使用，IGBT直接串联技术首先要保证控制信号的同步，并且必须在通过隔离后，各个信号之间的延迟在一个可以接受的范围内；其次是要保证在开通和关断过程中，电压被平均的分配在各个器件上，各个器件上的电压差别必须在一个合理的范围之内，否则会造成某些器件被击穿或者过早老化。 The increase in voltage puts forward higher requirements for traditional switching devices. The withstand voltage value of a single IGBT (Insulated Gate Bipolar Transistor) is still very limited, which is far from meeting high-voltage applications. Therefore, switching devices must be connected in series. To use, IGBT direct series technology must first ensure the synchronization of control signals, and the delay between each signal must be within an acceptable range after isolation; secondly, it must ensure that the voltage is averaged during turn-on and turn-off The distribution of the voltage on each device, the voltage difference on each device must be within a reasonable range, otherwise it will cause some devices to be broken down or prematurely aged.
现有技术因为开关器件不采用同一控制电路，各个激光器所产生的光脉冲受电脉冲控制，最终累积的时差，导致控制脉冲的同步性很难保证，这样造成一个器件导通过快，而另一器件因承受高压而损坏。 In the existing technology, because the switching devices do not use the same control circuit, the optical pulses generated by each laser are controlled by electrical pulses, and the accumulated time difference makes it difficult to ensure the synchronization of the control pulses, which causes one device to conduct quickly, while the other Devices are damaged by exposure to high voltage.
发明内容 Contents of the invention
发明目的：一个目的是提供一种基于拉曼激光放大器的串联IGBT门极驱动单元的同步方法，以解决现有技术存在的部分或全部问题。 Purpose of the invention: One purpose is to provide a method for synchronizing the series-connected IGBT gate drive units based on Raman laser amplifiers, so as to solve some or all of the problems existing in the prior art.
技术方案：一种基于拉曼激光放大器的串联IGBT门极驱动单元的同步方法，包括如下步骤： Technical solution: a method for synchronizing a series-connected IGBT gate drive unit based on a Raman laser amplifier, comprising the following steps:
半导体激光器发出光同步脉冲； The semiconductor laser emits optical synchronization pulses;
通过掺铒光纤放大器EDFA（Erbium-Doped Fiber Amplifier）对所述光同步脉冲进行拉曼放大； The optical synchronization pulse is Raman amplified by an erbium-doped fiber amplifier EDFA (Erbium-Doped Fiber Amplifier);
经滤波器和光功分器后，产生和串联IGBT个数相同的光脉冲，送入门极驱动单元GDU（Gate Drive Unit）； After passing through the filter and optical power splitter, the optical pulses with the same number of IGBTs in series are generated and sent to the gate drive unit GDU (Gate Drive Unit);
GDU将光信号转变成电信号，触发或关断IGBT。 The GDU converts the optical signal into an electrical signal to trigger or turn off the IGBT.
进一步地，本发明还提供了一种基于拉曼激光放大器的串联IGBT门极驱动单元的同步系统，包括用于发出光同步脉冲半的导体激光器；用于对所述光同步脉冲进行拉曼放大的掺铒光纤放大器EDFA；用于选择特定光频的滤波器；以及用于将特定频率的光脉冲分成多路的光功分器；每个GDU连接一光功分器，接收光同步脉冲并将其转变成电信号，控制IGBT的通断。 Further, the present invention also provides a synchronous system of series IGBT gate drive units based on a Raman laser amplifier, including a semiconductor laser for emitting a half of the optical synchronization pulse; for performing Raman amplification on the optical synchronization pulse The erbium-doped fiber amplifier EDFA; the filter used to select a specific optical frequency; and the optical power splitter used to divide the optical pulse of a specific frequency into multiple paths; each GDU is connected to an optical power splitter, which receives the optical synchronization pulse and Convert it into an electrical signal to control the on and off of the IGBT.
有益效果：本发明作为同步控制信号的光脉冲源自同一脉冲，能够严格保证同步，为同步关断和开启IGBT提供可靠的保证。 Beneficial effects: the optical pulse used as a synchronous control signal in the present invention originates from the same pulse, which can strictly guarantee the synchronization and provide a reliable guarantee for synchronously turning off and turning on the IGBT.
附图说明 Description of drawings
图1是本发明优选实施例的结构示意图。 Fig. 1 is a schematic structural view of a preferred embodiment of the present invention.
具体实施方式 Detailed ways
本发明基于拉曼激光放大器的串联IGBT门极驱动单元的同步系统包括依次相连的激光器、参铒光纤放大器EDFA、光滤波器、光功分器、光探测器、差分比较放大电路。 The synchronous system of the series-connected IGBT gate drive unit based on the Raman laser amplifier of the present invention comprises sequentially connected lasers, erbium fiber amplifiers EDFA, optical filters, optical power splitters, optical detectors, and differential comparison amplifier circuits.
其过程如下：同步脉冲为一个激光器发出的脉冲，经过同一个掺铒光纤放大器EDFA、同一个光滤波器，再通过光功分器将脉冲分配到各个IGBT的门极驱动单元，由光电探测器恢复成电脉冲，最终经过差分比较电路放大，控制IGBT的通断。 The process is as follows: the synchronization pulse is a pulse sent by a laser, passes through the same erbium-doped fiber amplifier EDFA, the same optical filter, and then distributes the pulse to the gate drive unit of each IGBT through an optical power divider, and the photodetector It is restored to an electrical pulse, and finally amplified by a differential comparison circuit to control the on-off of the IGBT.
由于，各个脉冲的相对误差仅为光纤的长度差及光探测器传输延迟差产生，光速为30万公里/秒，各个串联阀体直接的距离不会超过10米，产生的延时误差不会大于10ns。 Since the relative error of each pulse is only caused by the length difference of the optical fiber and the transmission delay difference of the optical detector, the speed of light is 300,000 km/s, the direct distance between each series valve body will not exceed 10 meters, and the resulting delay error will not Greater than 10ns. the
因此，可以满足IGBT直接串联技术要保证控制信号的同步，并且必须在通过隔离后，各个信号之间的延迟在一个可以接受的范围内的要求。 Therefore, it can meet the requirement that the IGBT direct series technology must ensure the synchronization of control signals, and the delay between each signal must be within an acceptable range after isolation.
总之，本发明光脉冲进行放大、滤波、分光来严格保证同步，同步的绝对误差可以不计，同步方式可靠，同步精度高，每个阀控装置可支持多达400个IGBT直接串联的阀体，实现400个IGBT驱动与控制装置的同步控制。 In short, the optical pulses of the present invention are amplified, filtered, and split to strictly ensure synchronization. The absolute error of synchronization can be ignored, the synchronization method is reliable, and the synchronization accuracy is high. Each valve control device can support up to 400 IGBTs directly connected in series. Realize the synchronous control of 400 IGBT drive and control devices.
以上详细描述了本发明的优选实施方式，但是，本发明并不限于上述实施方式中的具体细节，在本发明的技术构思范围内，可以对本发明的技术方案进行多种等同变换，这些等同变换均属于本发明的保护范围。 The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to the specific details in the above embodiments. Within the scope of the technical concept of the present invention, various equivalent transformations can be carried out to the technical solutions of the present invention. These equivalent transformations All belong to the protection scope of the present invention.
另外需要说明的是，在上述具体实施方式中所描述的各个具体技术特征，在不矛盾的情况下，可以通过任何合适的方式进行组合。为了避免不必要的重复，本发明对各种可能的组合方式不再另行说明。 In addition, it should be noted that the various specific technical features described in the above specific implementation manners may be combined in any suitable manner if there is no contradiction. In order to avoid unnecessary repetition, various possible combinations are not further described in the present invention.
此外，本发明的各种不同的实施方式之间也可以进行任意组合，只要其不违背本发明的思想，其同样应当视为本发明所公开的内容。 In addition, various combinations of different embodiments of the present invention can also be combined arbitrarily, as long as they do not violate the idea of the present invention, they should also be regarded as the disclosed content of the present invention.
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- 2014-08-26 CN CN201410425610.6A patent/CN104218779A/en active Pending
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Application publication date: 20141217 |