CN104218129A - Led substrate structure and manufacturing method thereof - Google Patents
Led substrate structure and manufacturing method thereof Download PDFInfo
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- CN104218129A CN104218129A CN201410495598.6A CN201410495598A CN104218129A CN 104218129 A CN104218129 A CN 104218129A CN 201410495598 A CN201410495598 A CN 201410495598A CN 104218129 A CN104218129 A CN 104218129A
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- substrate
- led
- film system
- dbr film
- convex structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
Abstract
The invention discloses an LED (light-emitting diode) substrate structure and a manufacturing method thereof, firstly, a patterned substrate technology is organically combined with a DBR technology to more effectively improve luminous efficiency and brightness of the LED; secondly, before the substrate is thinned, a concave structure or a convex structure and a DBR membrane are positioned on the same surface of the substrate to conveniently execute processing and subsequent cleaning, thus the hidden cost of the LED is undoubtedly reduced during processing; thirdly, the window with the DBR membrane isn't photoetched when being manufactured, thereby avoiding the technical bottleneck that the micro nanopattern is difficult to be aligned during photoetching; in short, the manufacturing method of the LED substrate structure has the characteristics of simple technology and low cost, thus the method is applied to the large-scale commercialized production, besides the luminous efficiency and brightness of the LED can be more effectively through the LED substrate structure, thereby quickening the industrialization process that the LED enters into the high-end illumination field and ordinary families and satisfying the sustainable development strategy of the LED.
Description
Technical field
The present invention relates to semiconductor optoelectronic field of chip manufacture technology, particularly a kind of LED substrat structure and preparation method thereof.
Background technology
Along with the raising of people's living standard, the enhancing of environmental consciousness, that pursues domestic environment, leisure and comfort level improves constantly, the situation that light fixture lamp decoration is also coexisted by simple illumination functions turning light and decoration gradually, the solid-state cold light source LED replacement conventional light source with illumination and decoration double dominant enters daily life becomes natural trend.
GaN base LED is since early 1990s commercialization, and through the development of twenties years, its structure was tending towards ripe and perfect, can meet the demand of people's present stage to decorative lamp; But will replace conventional light source completely and enter lighting field, the raising of luminosity is but the endless pursuit of LED industry researcher.
Under the prerequisite of the limited space that can improve at internal quantum efficiency (close to 100%), the researcher of LED industry has turned to external quantum efficiency sight, propose the multiple technologies scheme and method that can improve light extraction efficiency, such as patterned substrate technology, sidewall coarsening technique, DBR technology, optimize electrode structure, on substrate or nesa coating, make 2 D photon crystal etc.Wherein patterned substrate most effect, especially since 2010, in the excitation of the various policy of government with under promoting, no matter be that the dry method patterned substrate technology of cone structure or the wet method pattern substrate technology of Pyramid are obtained for development at full speed, its technique is very ripe, and instead of flat substrate completely in 2012, become the main flow substrate of LED chip, make the crystal structure of LED and luminosity be obtained for revolutionary raising.
Certainly, after thinning, the luminosity of LED also can be improved to a certain extent in the technology of the back side evaporation DBR of LED substrate.But after thinning, LED wafer is very thin (only having about 80um), be very easy to sliver, and once occur extremely being all not easy to do process of doing over again, can only scrap, so the cost of DBR technique is far above material and processing cost, it is then more invisible cost.So present stage LED replaces conventional illumination sources, enter lighting field, enter common people house, the problem run into is not the problem that brightness does not reach, but the problem that the U.S. valency of thing is not honest and clean, and this problem is all generally that structure is reasonable not, technology is optimized not, the inadequate Institute of Science of manufacturing cost is caused to cause.
Summary of the invention
The object of the present invention is to provide a kind of LED substrat structure and preparation method thereof, inadequate to solve existing LED or luminosity, or easy sliver in manufacturing process, the problem that cost is higher.
For solving the problems of the technologies described above, the invention provides a kind of LED substrat structure, described LED substrat structure comprises: substrate, described substrate is formed with the concave structure of cyclic array arrangement or the convex structure of cyclic array arrangement, the inwall of described concave structure is formed with DBR film system; Or the substrate surface between the sidewall of described convex structure and convex structure is formed with DBR film system.
Optionally, in described LED substrat structure, the substrate surface between described concave structure is without DBR film system; Or the roof of described convex structure is without DBR film system.
Optionally, in described LED substrat structure, the substrate surface between described concave structure is convenient to connect GaN layer; Or the roof of described convex structure is convenient to connect GaN layer.
Optionally, in described LED substrat structure, the section shape of described concave structure is triangle or trapezoidal; The section shape of described convex structure is trapezoidal.
Optionally, in described LED substrat structure, the plan view shape of described concave structure is circular, oval or polygon; The plan view shape of described convex structure is circular, oval or polygon.
Optionally, in described LED substrat structure, described DBR film system is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material.
Optionally, in described LED substrat structure, often kind of material is according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.
Optionally, in described LED substrat structure, described substrate is Sapphire Substrate.
The present invention also provides a kind of manufacture method of LED substrat structure, and the manufacture method of described LED substrat structure comprises:
Substrate is provided;
Etch described substrate, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;
The inwall of described concave structure is formed DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system.
Optionally, in the manufacture method of described LED substrat structure, etch described substrate, comprise with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate:
Form mask layer over the substrate;
Utilize photoetching and etching technics, remove part mask layer, expose section substrate;
Etch the section substrate exposed, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;
Remove remaining mask layer.
Optionally, in the manufacture method of described LED substrat structure, formed in mask layer over the substrate, the material of described mask layer is at least one in silicon dioxide, silicon nitride and silicon oxynitride, and the thickness of described mask layer is 0.1 μm ~ 1 μm.
Optionally, in the manufacture method of described LED substrat structure, dry method or wet-etching technology is utilized to etch the section substrate exposed.
Optionally, in the manufacture method of described LED substrat structure, when utilizing wet-etching technology to etch the section substrate exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.
Optionally, in the manufacture method of described LED substrat structure, when utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.
Optionally, in the manufacture method of described LED substrat structure, the inwall of described concave structure forms DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system comprise:
Substrate surface on the inwall of described concave structure and between concave structure forms DBR film system; Or the substrate surface between the sidewall of described convex structure, roof and convex structure forms DBR film system;
Formation photoresist is fastened at described DBR film;
Etching photoresist and the DBR film system of exposing at first, removal unit divides the DBR film system on the roof of DBR film system on the substrate surface between photoresist and concave structure or convex structure;
Remove remaining photoresist.
Optionally, in the manufacture method of described LED substrat structure, the thickness of described photoresist is greater than the degree of depth of described concave structure or the height of described convex structure.
Optionally, in the manufacture method of described LED substrat structure, described substrate is Sapphire Substrate.
Optionally, in the manufacture method of described LED substrat structure, described DBR film system is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material, often kind of material is formed according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.
In LED substrat structure provided by the invention and preparation method thereof, first, patterned substrate technology and DBR technology are organically combined, more effectively can improve luminous efficiency and the luminosity of LED; Secondly, concave structure or convex structure and DBR film system are positioned on the same surface of substrate, and are all complete before substrate thinning, and be convenient to very much processing and follow-up clean, this reduces the invisible cost in the LED course of processing undoubtedly; Again, when making the window of DBR film system, without the need to photoetching, avoid the technical bottleneck of the difficult contraposition of photoetching in the micro-nano graph course of processing; In a word, the manufacture method technique of LED substrat structure provided by the present invention is simple, with low cost, be suitable for large-scale commercial to produce, LED substrat structure provided by the present invention more effectively can improve luminous efficiency and the luminosity of LED, the industrialization process that LED enters high-end lighting field and common people family can be accelerated, meet the strategy of sustainable development of LED.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention one;
Fig. 2 ~ Figure 10 is the generalized section of the device architecture formed in the manufacture method of the LED substrat structure of the embodiment of the present invention one;
Figure 11 is the vertical view of the device architecture shown in Fig. 4;
Figure 12 is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention two;
Figure 13 ~ Figure 21 is the generalized section of the device architecture formed in the manufacture method of the LED substrat structure of the embodiment of the present invention two;
Figure 22 is the vertical view of the device architecture shown in Figure 15;
Figure 23 is the generalized section of the LED substrat structure of the embodiment of the present invention three.
Embodiment
Below in conjunction with the drawings and specific embodiments, LED substrat structure that the present invention proposes and preparation method thereof is described in further detail.According to the following describes and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
[embodiment one]
Please refer to Fig. 1, it is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention one.As shown in Figure 1, the manufacture method of described LED substrat structure comprises:
Step S10: substrate is provided;
Step S11: etch described substrate, to form the convex structure of cyclic array arrangement over the substrate;
Step S12: form DBR film system on the substrate surface between the sidewall and convex structure of described convex structure.
Concrete, please refer to Fig. 2 ~ Figure 11, wherein, Fig. 2 ~ Figure 10 is the generalized section of the device architecture formed in the manufacture method of the LED substrat structure of the embodiment of the present invention one; Figure 11 is the vertical view of the device architecture shown in Fig. 4.
As shown in Figure 2, provide substrate 20, preferably, described substrate 20 is Sapphire Substrate.
Then, as shown in Fig. 3 ~ Fig. 6, described substrate 20 is etched, to form the convex structure 22 of cyclic array arrangement on described substrate 20.
First, as shown in Figure 3, described substrate 20 forms mask layer 21.Preferably, the thickness of described mask layer 21 is 0.1 μm ~ 1 μm.Further, the material of described mask layer 21 can be at least one in silicon dioxide, silicon nitride or silicon oxynitride etc.
Then, as shown in Figure 4, utilize photoetching and etching technics, remove part mask layer 21, expose section substrate 20.At this, can be corresponding to Figure 11, Figure 11 vertical view that is the device architecture shown in Fig. 4.As shown in figure 11, at this, the shape of substrate 20 is circular, remaining mask layer 21 is multiple discrete circular configurations, and it is cyclic array arrangement, wherein, at the marginal position of substrate 20, remaining mask layer 21 is limited to the size and shape of substrate 20, is not complete circular configuration.In other embodiments of the application, remaining mask layer 21 also can be multiple discrete ellipsoidal structure, triangle or polygonized structure etc., and the application is not construed as limiting this.
Then, as shown in Figure 5, the section substrate 20 exposed is etched, to form the convex structure 22 of cyclic array arrangement on described substrate 20.At this, the section shape of described convex structure 22 is trapezoidal.
In the embodiment of the present application, dry etch process can be utilized to etch the section substrate 20 exposed, wet-etching technology also can be utilized to etch the section substrate 20 exposed.Concrete, when utilizing wet-etching technology to etch the section substrate 20 exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, and in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.Concrete, can do adaptability according to the height of the convex structure 22 that will be formed and select, the embodiment of the present application repeats no more this.When utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.Concrete etching gas can select the etching gas of this area routine, such as chlorine, boron chloride or argon gas etc.
Finally, as shown in Figure 6, remove remaining mask layer 21, the mask layer 21 by convex structure 22 roof is removed.
After defining convex structure 22, then the substrate 20 between the sidewall and convex structure 22 of described convex structure 22 is formed DBR film system on the surface, concrete, please refer to Fig. 7 ~ Figure 10.
First, as shown in Figure 7, the substrate surface 20 between the sidewall of described convex structure 22, roof and convex structure 22 forms DBR film system 23; Namely a DBR film system 23 is formed, the substrate surface 20 between the sidewall of the described convex structure 22 of described DBR film system 23 covering, roof and convex structure 22.Preferably, described DBR film system 23 is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material, often kind of material is according to λ/4n thickness alternating growth, and its growth cycle is 3-20.Such as, when described DBR film system 23 is by TiO
2and SiO
2stacked alternating growth is formed, when growth cycle is 3, and namely can the long TiO of Mr.
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is one-period; Then regrowth TiO
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is second period; Last regrowth TiO
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is the 3rd cycle, and namely often kind of material is according to the DBR film system in λ/4n thickness alternately laminated 3 cycles of growth formation.Then, as shown in Figure 8, described DBR film system 23 forms photoresist 24, preferably, the thickness of described photoresist 24 is greater than the height of described convex structure 22.
Then, as shown in Figure 9, etching photoresist 24 and the DBR film system 23 of exposing at first, removal unit divides the DBR film system 23 on the roof of photoresist 24 and convex structure 22.Namely the roof of convex structure 22 is without DBR film system 23.
Finally, as shown in Figure 10, remaining photoresist 24 is removed.Thus, the substrate 20 between the sidewall and convex structure 22 of described convex structure 22 defines DBR film system 23 on the surface.
Please continue to refer to Figure 10, namely a kind of LED substrat structure is defined, described LED substrat structure comprises: substrate 20, described substrate 20 is formed with the convex structure 22 of cyclic array arrangement, substrate 20 between the sidewall of described convex structure 22 and convex structure 22 is formed with DBR film system 23 on the surface, is convenient to the luminosity improving LED better.In the subsequent fabrication process of LED, the roof 220 of described convex structure 22 can be utilized to connect GaN layer.Thus realize LED substrat structure and be connected better with between GaN layer, and then improve the quality of GaN base LED.
As fully visible, in LED substrat structure that the embodiment of the present invention provides and preparation method thereof, first, patterned substrate technology and DBR technology are organically combined, more effectively can improve luminous efficiency and the luminosity of LED; Secondly, convex structure and DBR film system are positioned on the same surface of substrate, and are all complete before substrate thinning, and be convenient to very much processing and follow-up clean, this reduces the invisible cost in the LED course of processing undoubtedly; Again, when making the window of DBR film system, without the need to photoetching, avoid the technical bottleneck of the difficult contraposition of photoetching in the micro-nano graph course of processing; In a word, the manufacture method technique of LED substrat structure provided by the present invention is simple, with low cost, be suitable for large-scale commercial to produce, LED substrat structure provided by the present invention more effectively can improve luminous efficiency and the luminosity of LED, the industrialization process that LED enters high-end lighting field and common people family can be accelerated, meet the strategy of sustainable development of LED.
[embodiment two]
Please refer to Figure 12, it is the schematic flow sheet of the manufacture method of the LED substrat structure of the embodiment of the present invention two.As shown in figure 12, the manufacture method of described LED substrat structure comprises:
Step S30: substrate is provided;
Step S31: etch described substrate, to form the concave structure of cyclic array arrangement over the substrate;
Step S32: form DBR film system on the inwall of described concave structure.
Concrete, please refer to Figure 13 ~ Figure 22, wherein, Figure 13 ~ Figure 21 is the generalized section of the device architecture formed in the manufacture method of the LED substrat structure of the embodiment of the present invention two; Figure 22 is the vertical view of the device architecture shown in Figure 15.
As shown in figure 13, provide substrate 40, preferably, described substrate 40 is Sapphire Substrate.
Then, as shown in Figure 14 ~ Figure 17, described substrate 40 is etched, to form the concave structure 42 of cyclic array arrangement on described substrate 40.
First, as shown in figure 14, described substrate 40 forms mask layer 41.Preferably, the thickness of described mask layer 41 is 0.1 μm ~ 1 μm.Further, the material of described mask layer 41 can be at least one in silicon dioxide, silicon nitride or silicon oxynitride etc.
Then, as shown in figure 15, utilize photoetching and etching technics, remove part mask layer 41, expose section substrate 40.At this, can be corresponding to Figure 22, Figure 22 vertical view that is the device architecture shown in Figure 15.As shown in figure 22, at this, the shape of substrate 40 is circular, the mask layer 41 removed is multiple discrete circular configurations, and it is cyclic array arrangement, wherein, at the marginal position of substrate 40, the mask layer 41 of removal is limited to the size and shape of substrate 40, is not complete circular configuration.In other embodiments of the application, the mask layer 41 of removal also can be multiple discrete ellipsoidal structure, triangular structure or polygonized structure etc., and the application is not construed as limiting this.
Then, as shown in figure 16, the section substrate 40 exposed is etched, to form the concave structure 42 of cyclic array arrangement on described substrate 40.At this, the section shape of described concave structure 42 is trapezoidal.
In the embodiment of the present application, dry etch process can be utilized to etch the section substrate 40 exposed, wet-etching technology also can be utilized to etch the section substrate 40 exposed.Concrete, when utilizing wet-etching technology to etch the section substrate 40 exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, and in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.Concrete, can do adaptability according to the degree of depth of the concave structure 42 that will be formed and select, the embodiment of the present application repeats no more this.When utilizing dry etch process to etch the section substrate 40 exposed, the dry etch process selected is inductively coupled plasma dry etch process.Concrete etching gas can select the etching gas of this area routine, such as chlorine, boron chloride or argon gas etc.
Finally, as shown in figure 17, remove remaining mask layer 41, the mask layer 41 by substrate 40 surface between concave structure 42 is removed.
After defining concave structure 42, then form DBR film system by the inwall of described concave structure 42, concrete, please refer to Figure 18 ~ Figure 21.
First, as shown in figure 18, substrate 40 surface on the inwall of described concave structure 42 and between concave structure 42 forms DBR film system 43; Namely a DBR film system 43 is formed, substrate 40 surface on the inwall of the described concave structure 42 of described DBR film system 43 covering and between concave structure 42.Preferably, described DBR film system 43 is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material, often kind of material is according to λ/4n thickness alternating growth, and growth cycle is 3-20.Such as, when described DBR film system 43 is by TiO
2and SiO
2stacked alternating growth is formed, when growth cycle is 3, and namely can the long TiO of Mr.
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is one-period; Then regrowth TiO
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is second period; Last regrowth TiO
2form λ/4n
tiO2the TiO of thickness
2film, regrowth SiO
2form λ/4n
siO2the SiO of thickness
2film, this is the 3rd cycle, and namely often kind of material is according to the DBR film system in λ/4n thickness alternately laminated 3 cycles of growth formation.
Then, as shown in figure 19, described DBR film system 43 forms photoresist 44, preferably, the thickness of described photoresist 44 is greater than the degree of depth of described concave structure 42.
Then, as shown in figure 20, etching photoresist 44 and the DBR film system 43 of exposing at first, removal unit divides the DBR film system 43 on substrate 40 surface between photoresist 44 and concave structure 42.Namely substrate 40 surface between concave structure 42 is without DBR film system 43.
Finally, as shown in figure 21, remaining photoresist 44 is removed.Thus, the inwall of described concave structure 42 defines DBR film system 43.
Please continue to refer to Figure 21, namely define a kind of LED substrat structure, described LED substrat structure comprises: substrate 40, described substrate 40 is formed with the concave structure 42 of cyclic array arrangement, the inwall of described concave structure 42 is formed with DBR film system 43, is convenient to the luminosity improving LED better.In the subsequent fabrication process of LED, the substrate surface 400 between described concave structure 42 can be utilized to connect GaN layer.Thus realize LED substrat structure and be connected better with between GaN layer, and then improve the quality of GaN base LED.
As fully visible, in LED substrat structure that the embodiment of the present invention provides and preparation method thereof, first, patterned substrate technology and DBR technology are organically combined, more effectively can improve luminous efficiency and the luminosity of LED; Secondly, concave structure and DBR film system are positioned on the same surface of substrate, and are all complete before substrate thinning, and be convenient to very much processing and follow-up clean, this reduces the invisible cost in the LED course of processing undoubtedly; Again, when making the window of DBR film system, without the need to photoetching, avoid the technical bottleneck of the difficult contraposition of photoetching in the micro-nano graph course of processing; In a word, the manufacture method technique of LED substrat structure provided by the present invention is simple, with low cost, be suitable for large-scale commercial to produce, LED substrat structure provided by the present invention more effectively can improve luminous efficiency and the luminosity of LED, the industrialization process that LED enters high-end lighting field and common people family can be accelerated, meet the strategy of sustainable development of LED.
[embodiment three]
Please refer to Figure 23, it is the generalized section of the LED substrat structure of the embodiment of the present invention three.As shown in figure 23, described LED substrat structure comprises: substrate 50, described substrate 50 is formed with the concave structure 52 of cyclic array arrangement, the inwall of described concave structure 52 is formed with DBR film system 53.The difference of the LED substrat structure in the present embodiment three and the LED substrat structure in embodiment two is, the section shape of the concave structure 52 in the present embodiment three is triangle, and the section shape of concave structure 42 in embodiment two is trapezoidal, this is controlled by regulating the etching technics of substrate, and the embodiment of the present application repeats no more this.Can corresponding reference example two about part NM in the embodiment of the present application, the embodiment of the present application repeats no more equally to this.
Foregoing description is only the description to present pre-ferred embodiments, any restriction not to the scope of the invention, and any change that the those of ordinary skill in field of the present invention does according to above-mentioned disclosure, modification, all belong to the protection range of claims.
Claims (18)
1. a LED substrat structure, is characterized in that, comprising: substrate, described substrate is formed with the concave structure of cyclic array arrangement or the convex structure of cyclic array arrangement, the inwall of described concave structure is formed with DBR film system; Or the substrate surface between the sidewall of described convex structure and convex structure is formed with DBR film system.
2. LED substrat structure as claimed in claim 1, it is characterized in that, the substrate surface between described concave structure is without DBR film system; Or the roof of described convex structure is without DBR film system.
3. LED substrat structure as claimed in claim 2, is characterized in that, the substrate surface between described concave structure is convenient to connect GaN layer; Or the roof of described convex structure is convenient to connect GaN layer.
4. LED substrat structure as claimed in claim 1, is characterized in that, the section shape of described concave structure is triangle or trapezoidal; The section shape of described convex structure is trapezoidal.
5. LED substrat structure as claimed in claim 1, is characterized in that, the plan view shape of described concave structure is circular, oval or polygon; The plan view shape of described convex structure is circular, oval or polygon.
6. LED substrat structure as claimed in claim 1, it is characterized in that, described DBR film system is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material.
7. LED substrat structure as claimed in claim 6, it is characterized in that, often kind of material is according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.
8. the LED substrat structure according to any one of claim 1 ~ 7, is characterized in that, described substrate is Sapphire Substrate.
9. a manufacture method for LED substrat structure, is characterized in that, comprising:
Substrate is provided;
Etch described substrate, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;
The inwall of described concave structure is formed DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system.
10. the manufacture method of LED substrat structure as claimed in claim 9, is characterized in that, etch described substrate, comprises with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate:
Form mask layer over the substrate;
Utilize photoetching and etching technics, remove part mask layer, expose section substrate;
Etch the section substrate exposed, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;
Remove remaining mask layer.
The manufacture method of 11. LED substrat structures as claimed in claim 10, it is characterized in that, formed in mask layer over the substrate, the material of described mask layer is at least one in silicon dioxide, silicon nitride and silicon oxynitride, and the thickness of described mask layer is 0.1 μm ~ 1 μm.
The manufacture method of 12. LED substrat structures as claimed in claim 10, is characterized in that, utilizes dry method or wet-etching technology to etch the section substrate exposed.
The manufacture method of 13. LED substrat structures as claimed in claim 12, it is characterized in that, when utilizing wet-etching technology to etch the section substrate exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.
The manufacture method of 14. LED substrat structures as claimed in claim 12, is characterized in that, when utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.
The manufacture method of 15. LED substrat structures as claimed in claim 9, is characterized in that, the inwall of described concave structure is formed DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system comprise:
Substrate surface on the inwall of described concave structure and between concave structure forms DBR film system; Or the substrate surface between the sidewall of described convex structure, roof and convex structure forms DBR film system;
Formation photoresist is fastened at described DBR film;
Etching photoresist and the DBR film system of exposing at first, removal unit divides the DBR film system on the roof of DBR film system on the substrate surface between photoresist and concave structure or convex structure;
Remove remaining photoresist.
The manufacture method of 16. LED substrat structures as claimed in claim 15, is characterized in that, the thickness of described photoresist is greater than the degree of depth of described concave structure or the height of described convex structure.
The manufacture method of 17. LED substrat structures according to any one of claim 9 ~ 16, it is characterized in that, described substrate is Sapphire Substrate.
The manufacture method of 18. LED substrat structures according to any one of claim 9 ~ 16, it is characterized in that, described DBR film system is by SiO, SiO
2, TiO
2or Ti
3o
5in the stacked formation of at least bi-material, often kind of material is formed according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410495598.6A CN104218129A (en) | 2014-09-24 | 2014-09-24 | Led substrate structure and manufacturing method thereof |
Applications Claiming Priority (1)
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793062A (en) * | 1995-08-10 | 1998-08-11 | Hewlett-Packard Company | Transparent substrate light emitting diodes with directed light output |
| KR20100008513A (en) * | 2008-07-16 | 2010-01-26 | 주식회사 실트론 | Compound semiconductor substrate, method for manufacturing the same, and compound semiconductor device using the same |
| CN101740677A (en) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | GaN based LED epitaxial wafer of graphical substrate and method for preparing same |
| CN102097563A (en) * | 2009-12-10 | 2011-06-15 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN102683532A (en) * | 2011-03-11 | 2012-09-19 | 山东华光光电子有限公司 | Substrate containing imaging Distributed Bragg Reflector (DBR) structure |
| CN102903810A (en) * | 2011-07-27 | 2013-01-30 | 隆达电子股份有限公司 | Light emitting diode and method for manufacturing the same |
| CN102903802A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED chip with DBR (distributed Bragg reflector) type current blocking layer and production method of LED chip |
| CN103311387A (en) * | 2013-06-28 | 2013-09-18 | 杭州士兰明芯科技有限公司 | Patterned substrate and manufacturing method thereof |
| CN104091869A (en) * | 2014-07-31 | 2014-10-08 | 湘能华磊光电股份有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN204088356U (en) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | LED substrat structure |
-
2014
- 2014-09-24 CN CN201410495598.6A patent/CN104218129A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5793062A (en) * | 1995-08-10 | 1998-08-11 | Hewlett-Packard Company | Transparent substrate light emitting diodes with directed light output |
| KR20100008513A (en) * | 2008-07-16 | 2010-01-26 | 주식회사 실트론 | Compound semiconductor substrate, method for manufacturing the same, and compound semiconductor device using the same |
| CN101740677A (en) * | 2008-11-20 | 2010-06-16 | 深圳世纪晶源华芯有限公司 | GaN based LED epitaxial wafer of graphical substrate and method for preparing same |
| CN102097563A (en) * | 2009-12-10 | 2011-06-15 | Lg伊诺特有限公司 | Light emitting device and light emitting device package |
| CN102683532A (en) * | 2011-03-11 | 2012-09-19 | 山东华光光电子有限公司 | Substrate containing imaging Distributed Bragg Reflector (DBR) structure |
| CN102903810A (en) * | 2011-07-27 | 2013-01-30 | 隆达电子股份有限公司 | Light emitting diode and method for manufacturing the same |
| CN102903802A (en) * | 2011-07-28 | 2013-01-30 | 上海博恩世通光电股份有限公司 | LED chip with DBR (distributed Bragg reflector) type current blocking layer and production method of LED chip |
| CN103311387A (en) * | 2013-06-28 | 2013-09-18 | 杭州士兰明芯科技有限公司 | Patterned substrate and manufacturing method thereof |
| CN104091869A (en) * | 2014-07-31 | 2014-10-08 | 湘能华磊光电股份有限公司 | Light emitting diode chip and manufacturing method thereof |
| CN204088356U (en) * | 2014-09-24 | 2015-01-07 | 杭州士兰明芯科技有限公司 | LED substrat structure |
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