CN104218097A - 一种Si/NiO:Cu异质pn结二极管 - Google Patents
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- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 7
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 238000002360 preparation method Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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Abstract
本发明公开了一种Si／NiO：Cu异质pn结二极管，至少包括pn结和欧姆接触电极，所述pn结由n型Si衬底上生长p型NiO：Cu薄膜而得到的异质pn结。本发明利用磁控溅射工艺在n型Si衬底上制备p型NiO：Cu薄膜最后采用磁控溅射或热蒸发法在pn结上制作电极。本发明中异质pn结二极管具有较高的反向击穿电压、较大的正向电流密度，而且其制备方法工艺简单、成本低廉。
Description
技术领域
本发明涉及一种Si／NiO：Cu异质pn结二极管。属于功能材料和光电子器件领域。
背景技术
强关联材料NiO中含有的d(f)电子的内部自由度如自旋、电荷、轨道之间的相互作用，使得NiO表现出许多奇异的性质，同时也使得材料的物性随着内部参数如温度、压强、掺杂的变化而发生显著改变。截止到目前，NiO因其良好的催化性能、热敏性能而被应用于催化剂、电池电极、电化学电容器等领域的研究，对其光电特性的研究少见报道。半导体异质结易于实现光生电荷分离被广泛应用于薄膜电池等光电子器件的研制和开发。NiO除了上述性质外，还是p型直接宽带隙半透明半导体材料，与间接带隙半导体材料相比，量子效率相对较高。室温下禁带宽度为3.0-4.0eV，3d电子结构的d-d轨道跃迁，使其在可见光区域存在较弱吸收。我们通过NiO基异质结形式研究新型光电子器件。P.Puspharajha等人采用喷雾热解法通过对NiO掺入Li+使NiO薄膜在可见光波段透光率达到90％，薄膜电阻下降到1Ω·cm(见文献P PUSPHARAJAH，S RADHAKRISHNA，A K AROF.Transparent conducting lithium-doped nickel oxide thin films by spray pyrolysis technique.Joumal of Materials Science，1997，32(11)：3001-3006)。但从长远考虑，Li金属价格过于昂贵，不适于应用。我们将Cu元素引入NiO，制备NiO：Cu基异质结，这非常符合现代社会秉承的绿色能源宗旨，在此我们选用价格低廉的n型Si衬底作为异质结的另一端，从而实现Si／NiO：Cu异质pn结二极管。这种选择对于新型器件的开发有着重要意义，而目前对于Si／NiO：Cu异质结还未见报道。
发明内容
为提高传统的平面pn结二极管的性能，本发明提供了一种Si／NiO：Cu异质pn结二极管，制备的Si／NiO：Cu异质pn结二极管具有较高的反向击穿电压、较大的正向电流密度。相对于传统的平面pn结二极管，该新型二极管的整流特性得到了提高。
本发明的技术方案：Si／NiO：Cu异质pn结二极管，至少包括pn结和欧姆接触电极，所述pn结是由n型Si衬底上生长p型NiO：Cu形成异质pn结。
上述Si／NiO：Cu异质pn结二极管的制备方法：用磁控溅射工艺在n型Si衬底上制备NiO：Cu薄膜形成异质pn结；最后采用溅射或热蒸发法在pn结上制作电极；其中，NiO：Cu和Si表面溅射或蒸发镍或铝或金电极。
本发明采用直径为50mm的NiO：CuO陶瓷靶，磁控溅射制备的NiO：Cu薄膜。溅射前的腔体本底真空度优于3x10-4pa，在此采用的相对氧分压O2／(O2+Ar)=0％-100％。溅射气压为0.5-2Pa，溅射功率100-200W。在镀膜之前，预溅射5min以去除靶材表面的杂质。镀膜时间均为20-120min，衬底温度为RT-600℃或者后期退火温度从200℃至700℃时间为0.5至1个小时。
本发明利用n型Si衬底与p型NiO：Cu薄膜形成了异质pn结二极管。通过对NiO：Cu薄膜制备等条件的控制、pn结结构的优化等，提高了异质pn结性能，充分发挥半导体NiO：Cu在异质pn结应用方面的独到优势。
附图说明
图1为本发明Si／NiO：Cu异质pn结二极管XRD衍射图(实施例一)
图2为本发明Si／NiO：Cu异质pn结二极管UV光谱曲线(实施例一)
图3(a)和(b)为本发明反映电极nn和pp欧姆接触的I-V曲线(实施例一)
图4为本发明反映异质结整流特性的I-V曲线(实施例一)
图5为本发明反映异质结整流特性的I-V曲线(实施例二)
图6为本发明反映异质结整流特性的I-V曲线(实施例三)
具体实施方式
本发明Si／NiO：Cu异质pn结二极管，至少包括pn结和欧姆接触电极，所述pn结是直接在n型Si衬底上沉积NiO：Cu形成异质pn结。其具体制备步骤如下：
(1)采用半导体工艺中的清洗方法清洗硅片并用氮气吹干；
(2)p-NiO：Cu的制备：溅射前的腔体本底真空度优于3x10-4pa，采用的相对氧分压O2／(O2+Ar)=0％-100％，溅射气压为0.5-2Pa，溅射功率100-200W。在镀膜之前，预溅射5min以去除靶材表面的杂质。镀膜时间均为20-120min，衬底温度为RT-600℃以及温度为200℃至700℃退火0.5至1个小时。
(3)电极的制备：采用溅射或热蒸发等方法(如：唐伟忠著，薄膜材料制备原理、技术及应用，冶金工业出版社1998第一版)在NiO：Cu和Si表面制作镍／铝／金电极。
(4)测试用Keithley2612A检测电极的欧姆接触特性和异质pn结二极管的I-V特性(整流特性)。
实施例一
(1)采用半导体工艺中的清洗方法清洗硅片并用氮气吹干；
(2)p-NiO：Cu的制备：采用直径为50mm的NiO：CuO陶瓷靶。磁控溅射制备的NiO：Cu薄膜。溅射前的腔体本底真空度优于3x10-4pa，采用的相对氧分压O2／(O2+Ar)=30％。溅射气压为2Pa，溅射功率150W。在镀膜之前，预溅射5min 以去除靶材表面的杂质。镀膜时间均为40min，衬底温度为300℃。该样品的XRD衍射结构图见图1，可见只见到(111)衍射峰，没有其他衍射杂峰出现。另外，我们还将样品制备在石英衬底上，对其进行了光学特性的测试。UV光谱显示样品的透射率超过了60％。说明该样品适合用于透明光学器件的研究，见图2。
(3)电极的制备：采用热蒸发方法在NiO：Cu和Si表面边缘制作Ni电极。
(4)测试用Keithley2612A检测电极的欧姆接触特性和异质pn结二极管的I-V特性(整流特性)，见图3和图4。
实施例二
(1)采用半导体工艺中的清洗方法清洗硅片并用氮气吹干；
(2)p-NiO：Cu的制备：采用直径为50mm的NiO：Cu陶瓷靶。磁控溅射制备的NiO：Cu薄膜。溅射前的腔体本底真空度优于3x10-4pa，采用的相对氧分压O2／(O2+Ar)=60％。溅射气压为2Pa，溅射功率150W。在镀膜之前，预溅射5min以去除靶材表面的杂质。镀膜时间均为40min，衬底温度为300℃。
(3)电极的制备：采用热蒸发方法在NiO：Cu和Si表面边缘制作Ni电极。
(4)测试用Keithley2612A检测电极的欧姆接触特性和异质pn结二极管的I-V特性(整流特性)，见图5。
实施例三
(1)采用半导体工艺中的清洗方法清洗硅片并用氮气吹干；
(2)p-NiO：Cu的制备：采用直径为50mm的NiO：Cu陶瓷靶。磁控溅射制备的NiO：Cu薄膜。溅射前的腔体本底真空度优于3x10-4pa，采用的相对氧分压O2／(O2+Ar)=0％。溅射气压为2Pa，溅射功率150W。在镀膜之前，预溅射5min以去除靶材表面的杂质。镀膜时间均为40min，衬底温度为300℃。
(3)电极的制备：采用热蒸发方法在NiO：Cu和Si表面边缘制作Ni电极。
(4)测试用Keithley2612A检测电极的欧姆接触特性和异质pn结二极管的I-V特性(整流特性)，见图6。
Claims (5)
1.一种Si／NiO：Cu异质pn结二极管，至少包括pn结和欧姆接触电极，其特征在于：所述pn结是由n型Si衬底上生长NiO：Cu薄膜而得到的异质pn结。
2.权利要求1所述Si／NiO：Cu异质pn结二极管的制备方法，其特征在于：用磁控溅射工艺在n型Si衬底上制备NiO：Cu薄膜形成异质pn结。
3.根据权利要求2所述的制备方法，其特征在于：本发明采用NiO：CuO陶瓷靶，磁控溅射工艺制备NiO：Cu薄膜，在此采用氧分压O2／(O2+Ar)=0％-100％。溅射前的腔体本底真空度优于3x10-4pa，溅射气压为0.5-2Pa，溅射功率为100-200W。在镀膜之前，预溅射5min以去除靶材表面的杂质。镀膜时间均为20-120min，衬底温度从RT变化至600℃。
4.权利要求1，2或3所述Si／NiO：Cu异质pn结二极管的制备方法，其特征在于：将该异质结从200℃至700℃退火0.5至1个小时。
5.权利要求1或2或3所述n-Si／p-NiO：Cu异质pn结二极管的制备方法，其特征在于：采用溅射法或热蒸发法在pn结上制作电极；其中，NiO：Cu和Si表面沉积镍，铝或金电极。
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| CN109904278A (zh) * | 2018-12-18 | 2019-06-18 | 杭州电子科技大学 | 一种光电探测器及制备方法 |
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Non-Patent Citations (3)
| Title |
|---|
| DANIIL PARANICHEV,ETAL: "photovoltaic properties of Si-NiO structure", 《PHYS.STATUS SOLIDI C》 * |
| S.C.CHEN,ETAL: "preparation and properties of p-type transparent conductive Cu-doped NiO films", 《THIN SOLID FILMS》 * |
| Y ASHOK KUMAR REDDY,ETAL: "influence of oxygen partial pressure on the structural,optical and electrical properties of Cu-doped NiO thin films", 《PHYSICA SCRIPTA》 * |
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| CN109904278A (zh) * | 2018-12-18 | 2019-06-18 | 杭州电子科技大学 | 一种光电探测器及制备方法 |
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