CN104216107B - Single-pixel structure, digital micro-mirror device with same and production method of single-pixel structure and digital micro-mirror device - Google Patents
Single-pixel structure, digital micro-mirror device with same and production method of single-pixel structure and digital micro-mirror device Download PDFInfo
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- CN104216107B CN104216107B CN201310214576.3A CN201310214576A CN104216107B CN 104216107 B CN104216107 B CN 104216107B CN 201310214576 A CN201310214576 A CN 201310214576A CN 104216107 B CN104216107 B CN 104216107B
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Abstract
The invention provides a single-pixel structure, a digital micro-mirror device with the same and production method of the single-pixel structure and the digital micro-mirror device. The single-pixel structure comprises a substrate, a first conductive component and a reflector. The first conductive component is disposed on the substrate and provided with a left conductive part and a right conductive part. The reflector is disposed above the first conductive component in a suspension manner through a support structure which is disposed on the substrate or the first conductive component. The reflector comprises a reflecting part and a drive part vertical to the reflecting part. Part of the drive part extends to a part between the left conductive part and the right conductive part. Under a normal state, the drive part is vertical to the upper surface of the substrate and does not contact with the left conductive part and the right conductive part; when the left conductive part and the drive part apply voltage opposite in electric property, the drive part deflects towards the left conductive part; when the right conductive part and the drive part apply voltage opposite in electric property, the drive part deflects towards the right conductive part. By the structure, the reaction sensitivity of the reflector is increased, and the miniaturization manufacturing requirements of DMD chips are satisfied.
Description
Technical field
The application belongs to semiconductor applications, more particularly, to a kind of single pixel structure, including its DMD and
Their preparation method.
Background technology
With MEMS（Microsoft-electronic-mechanical-systems, MEMS）Aobvious with projection
Show the development of technology, increasing scheme is suggested to improve the performance of MEMS further, with meeting the market requirement.
TIX（TI）Exploitation proposes a kind of digital micro-mirror chip（Digital Micro mirror
Device, DMD）, it is all to be left floating using minimum speculum and can tilt 10-12 ° about to both sides, thus may make up opening
On and off opens two kinds of working conditions.The outstanding high-speed switch speed of DMD micro mirror element is a kind of accurate with bi-pulse width modulation
Color of image and gray scale reproduction technology combine, so that image can be become apparent from the refreshing of window, by strengthen right
Ratio degree, describes boundary line and separates single color and erase the defect in image.DLP projector with DMD as core is opened
Create reflective projection Age of Technology, compared traditional LC D and the transmission-type of cinefilm, the former is higher to light source utilization ratio, right
Outstanding than degree, product is more compact, and DMD is so that micromirror is deflected using voltage, is not lost in theory, unlike
LCD occurs aging phenomenon, and image quality is stable, durable in use.
At present, TIX（TI）This DMD structure include multiple single pixel structures, as institute in Fig. 1
The single pixel structural representation of two single pixels of inclusion being given, in figure includes two reflective mirrors 70 '（Also referred to as micro mirror）, wherein one
Individual reflective mirror 70 ' is to 10 degree of lopsidedness, another 10 degree of reflective mirror 70 ' inclined in opposite directions.Existing as shown in Figure 2
Have shown in the decomposition texture schematic diagram of single pixel structure, each single pixel structure includes substrate 10 ', deflectable is arranged on substrate
Reflective mirror 70 ' on 10 ', drives the deflection that reflective mirror 70 ' resets to recover structure 60 ', and in order to stop reflective mirror 70 ' and lining
The barrier sheet 80 ' that bottom 10 ' contacts.Deflection recovers structure 60 ' and is arranged between substrate 10 ' and reflective mirror 70 ', anti-including supporting
The support arm 61 ' of light microscopic 70 ', the yoke plate 62 ' of support arm 61 ', drive the rotary shaft 63 ' of yoke plate 62 ' spinning reduction, and setting
Spring leaf 64 ' in yoke plate 62 ' corner foreign aid.Barrier sheet 80 ' is arranged on bottom and the outside of yoke plate 62 '.Using process
In, respectively substrate 10 ' and yoke plate 62 ' are applied with the voltage of opposite-sign so that substrate 10 ' and yoke plate 62 ' are because electrically mutually on the contrary
Attract each other, drive yoke plate 62 ' rotation, and then drive speculum 70 ' deflection, the deflection of speculum 70 ' drives cantilever beam to reverse,
Barrier sheet 70 ' to being in the speculum of deflection state with certain resistance, blocking reflected mirror because deflection angle excessive with substrate phase
Contact and cause short circuit phenomenon.When stopping applied voltage, after loss of voltage, the attraction between substrate 10 ' and speculum 70 ' disappears
Lose, the twisting resistance of the drive Analysis of A Cantilever Beam Under in rotary shaft 63 ' for the speculum 70 ' goes back to equilbrium position.
At present, seen dmd chip on the market, in addition to having said structure, also there are other structures, but mostly all
It is the voltage using pressure opposite-sign, to realize the structure that substrate attracts mirror deflection purpose.However, current this knot
There is problems with structure：
1st, the lens dimension of speculum can not be too little, and not so charge attraction power is inadequate.
2nd, under conditions of mirror chip size limits, driving voltage is almost completely dependent on the springform of crossbeam material
Amount.
3rd, the complex structure due to being related to, the many high costs of mask plate quantity, yield is low.
Content of the invention
In order to solve deficiency of the prior art, this application provides a kind of single pixel structure, including its digital micro-mirror
Device and their preparation method, to adapt to DMD miniaturization, the demand for development of miniaturization.
The one side of the application provides a kind of single pixel structure, including：Substrate, be arranged on substrate first is conductive
Assembly, including left conductive part and right conductive part；Speculum, is hanged by the supporting construction being arranged on substrate or the first conductive component
Vacant lot is arranged on the top of the first conductive component, and speculum includes reflecting part and vertically disposed drive division, driving with reflecting part
Portion extends partially between left conductive part and right conductive part；Under normality, drive division is in the state vertical with substrate top surface, and
Do not contact with left conductive part and right conductive part；When left conductive part applies electrically contrary voltage with drive division, drive division is to the left
Conductive part deflects；When right conductive part applies electrically contrary voltage with drive division, drive division conductive part deflection to the right.
Second aspect of the application provides a kind of digital micro-mirror chip, including one or more groups of single pixel structures, respectively
Group single pixel structure includes above-mentioned single pixel structure.
3rd aspect of the application provides a kind of preparation method of single pixel structure, comprises the steps：Lining is provided
Bottom；Substrate is formed and includes left conductive part and right conductive part first conductive component；Deposited sacrificial material, forms and is located at left conduction
The first sacrifice portion in portion and right conductive part and the second sacrifice portion being located between left conductive part and right conductive part；Etch second sacrificial
Domestic animal portion, is internally formed drive division in the second sacrifice portion and forms groove；It is etched through the first sacrifice portion or the second sacrifice portion to be formed and support
Structure forms groove；Laying down support material, forms in supporting construction and forms supporting construction in groove；The conductive reflectorized material of deposition, forms
Conductive reflective material layer above the first sacrifice portion and supporting construction and be located at drive division and form drive division in groove；In conduction
Mask is arranged on reflective material layer, mask at least partly covers above supporting construction；Etching conductive reflective material layer is formed
Reflecting part；Remove mask, the first sacrifice portion and the second sacrifice portion, form single pixel structure.
4th aspect of the application provides the preparation method of single pixel structure, comprises the steps：Substrate is provided；?
First insulating barrier is formed on substrate；Etch the first insulating barrier, the first insulating barrier forms groove；Relative at two of groove
The first conductive component including left conductive part and right conductive part is formed respectively on sidewall surfaces；Deposited sacrificial material, formation is located at
The first sacrifice portion above first insulating barrier, left conductive part and right conductive part and be located between left conductive part and right conductive part the
Two sacrifice portions；Etch the second sacrifice portion, be internally formed drive division in the second sacrifice portion and form groove；It is etched through the first sacrifice portion shape
The second conductive component is become to form groove；Deposition conductive material, forms, in the second conductive component, the being formed in groove as supporting construction
Two conductive components；The conductive reflectorized material of deposition, forms the conductive reflectorized material being located in the first sacrifice portion and the second conductive component
Layer and the drive division being located in drive division formation groove, arrange mask, mask at least partly covers on conductive reflective material layer
The top of the second conductive component；Etching conductive reflective material layer forms reflecting part；Remove mask, the first sacrifice portion and the second sacrifice
Portion, forms single pixel structure.
5th aspect of the application provides a kind of preparation method of digital micro-mirror chip, including preparation single pixel structure
Step, preparation single pixel structure step adopt above-mentioned single pixel structure preparation method.
In single pixel structure provided herein, speculum includes reflecting part and drive division, and reflecting part and drive division
It is vertically arranged formation T-shaped structure.By the both sides of drive division in speculum, the first conductive component is set, with realize drive division with
After left conductive part or the right conductive part electrical opposite voltage of applying, drive division drives the purpose of reflecting part counter substrate deflection.At this
In kind of structure, speculum is made T-shaped structure so as in be located at the drive division of vertical direction and be arranged on left conductive part and right conduction
Between portion, to increase the corresponding surface between speculum and left conductive part and right conductive part, increase after applying opposite-sign voltage
Electromagnetically attraction, and then increase speculum reaction sensitivity.Meanwhile, there is speculum and first conduction of T-shaped structure
The part that assembly is electromagnetically attracted is mainly the drive division between left conductive part and right conductive part, is applied based on this
Plus opposite-sign voltage makes both produce the operation logic of electromagnetism shape attraction, can by reflecting part parallel to substrate plane cut
It is more little that face area makes, and is required with the making being adapted to dmd chip miniaturization, be miniaturized.
In addition to objects, features and advantages described above, the application also has other objects, features and advantages.
Below with reference to figure, the application is described in further detail.
Brief description
Accompanying drawing constitutes the part of this specification, is used for further understanding the application, and accompanying drawing shows that the application's is preferred
Embodiment, and be used for the principle of the application is described together with specification.In figure：
Fig. 1 shows the structural representation according to 2 single pixel structures in the DMD of prior art；
Fig. 2 shows the decomposed structural representation of a single pixel structure in Fig. 1；
Fig. 3 a shows the main view cross-sectional schematic of the single pixel structure according to a kind of embodiment of the application；
Fig. 3 b shows that the right side based on single pixel structure in Fig. 3 a regards cross-sectional schematic；
Fig. 3 c shows the overlooking the structure diagram based on single pixel structure in Fig. 3 a；
Fig. 4 a shows the main view cross-sectional schematic of the single pixel structure according to the application another kind embodiment；
Fig. 4 b shows that the right side based on single pixel structure in Fig. 4 a regards cross-sectional schematic；
Fig. 5 shows the schematic flow sheet of the single pixel structure preparation method according to one embodiment of the application；
Fig. 6 shows the schematic flow sheet of the single pixel structure preparation method according to another embodiment of the application；
Fig. 7 shows and forms the first insulation on substrate according to the single pixel structure preparation method of one embodiment of the application
Matrix main view cross-sectional schematic after layer；
Fig. 8 shows basal body structure cross-sectional schematic after setting groove in the first insulating barrier in Fig. 7 structure；
Fig. 9 a shows that the main view section view of matrix after forming left conductive part and right conductive part in the groove of Fig. 8 structure is illustrated
Figure；
Fig. 9 b shows that the right side based on matrix in Fig. 9 a regards cross-sectional schematic；
Figure 10 a shows the main view cross-sectional schematic of matrix after forming the second insulating barrier in the groove of Fig. 9 a structure；
Figure 10 b shows that the right side based on matrix in Figure 10 a regards cross-sectional schematic；
Figure 11 a show on the first insulating barrier in Figure 10 a structure and concave part in after deposited sacrificial material matrix master
Depending on cross-sectional schematic；
Figure 11 b shows that the right side based on matrix in Figure 11 a regards cross-sectional schematic；
Figure 12 a shows in the second sacrifice portion in Figure 11 a structure that etching forms deflection driven portion and forms matrix after groove
Main view cross-sectional schematic；
Figure 12 b shows that the right side based on matrix in Figure 12 a regards cross-sectional schematic；
Before Figure 13 a shows etching formation in the first sacrifice portion in Figure 12 a structure, conductive part forms groove and rear conductive part
The main view cross-sectional schematic of matrix after formation groove；
Figure 13 b shows that the right side based on matrix in Figure 13 a regards cross-sectional schematic；
Figure 14 a shows the main view of matrix after formation conductive supporting block, front conductive part and rear conductive part in Figure 13 a structure
Cross-sectional schematic；
Figure 14 b shows that the right side based on matrix in Figure 14 a regards cross-sectional schematic；
Figure 15 a shows the main view cross-sectional schematic of matrix after release expendable material in Figure 14 a structure；And
Figure 15 b shows that the right side based on matrix in Figure 15 a regards cross-sectional schematic.
Specific embodiment
It is noted that described further below is all exemplary it is intended to provide further instruction to the application.Unless it is another
Indicate, all technology used herein and scientific terminology have usual with the application person of an ordinary skill in the technical field
The identical meanings understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and it is not intended to restricted root evidence
The exemplary embodiment of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also anticipated
Figure includes plural form, additionally, it should be understood that, when in this manual using belonging to "comprising" and/or " inclusion ",
It indicates existing characteristics, step, operation, device, assembly and/or combinations thereof.
For the ease of description, space relative terms can be used here, such as " ... on ", " ... top ",
" above " etc., the locus for describing as a device shown in the figure or feature and other devices or feature is closed
System.It should be appreciated that space relative terms be intended to comprise in addition to the orientation described by device is in figure using or
Different azimuth in operation.For example, if the device in accompanying drawing is squeezed, be described as " other devices or construction above " or
" below other devices or construction " will be positioned as or " in other devices after the device of " on other devices or construction "
Or under construction ".Thus, exemplary term " in ... top " can include two kinds of " in ... top " and " in ... lower section "
Orientation.This device can also other different modes positioning（Ratate 90 degrees or be in other orientation）, and to used herein above
Space relative descriptors make respective explanations.
Now, it is more fully described the exemplary embodiment according to the application with reference to the accompanying drawings.However, these exemplary realities
Apply example to be implemented by many different forms, and should not be construed to be limited solely to the embodiments set forth herein.Should
When being understood by, these embodiments are provided so that disclosure herein is thoroughly and complete, and by these exemplary realities
The design applying example is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expands layer and region
Thickness, and make to be presented with like reference characters identical device, thus description of them will be omitted.
Left conductive part, right conductive part, front conductive part and rear conductive part are all that middle with reference to the accompanying drawings position is entered in this application
Row name it should be appreciated that this relative position relation is not limiting to the provider location of conductive structure, it comprises
Different azimuth in use or operation in addition to the orientation described by device is in figure.
A kind of embodiment of the application provides a kind of single pixel structure, and Fig. 3 a-3c shows this single pixel structure
Main view cross-sectional schematic, the right side regard cross-sectional schematic and overlook cross-sectional schematic；It is conductive that this single pixel structure includes substrate 10, first
Assembly 30 and speculum 70.First conductive component 30 arranges over the substrate 10, including left conductive part 31 and right conductive part 32；Reflection
Mirror 70 is vacantly arranged on the first conductive component 30 by the supporting construction being arranged on substrate 10 or the first conductive component 30
Top, including reflecting part 71 and with reflecting part 71 vertically disposed drive division 72, drive division 72 extends partially into left conductive part 31
And right conductive part 32 between；Under normality, drive division 72 is in the state vertical with substrate 10 upper surface, and with left conductive part 31 and
Right conductive part 32 does not contact；When left conductive part 31 is with applying electrically contrary voltage on drive division 72, drive division 72 is led to the left
Electric portion 31 deflects；When right conductive part 32 is with applying electrically contrary voltage on drive division 72, drive division 72 conductive part 32 to the right
Deflection.This single pixel structure provided herein in practical operation by be respectively provided with speculum, left conductive part and
Right conductive part and connecting wires that the external world is connected（In figure is not shown）, in case energising uses.
In above-mentioned first conductive component 30 in addition to left conductive part 31 and right conductive part 32, also include respectively with left conduction
Portion 31 and/or connected the connecting wires or similar structures of right conductive part 32.Preferably, in left conductive part 31 and right conductive part 32 and lining
One layer insulating can be set between bottom 10.It is highly preferred that reflecting part 71 and drive division 72 can adopt in above-mentioned speculum 70
Different raw materials, reflecting part 71 adopts reflecting material, and drive division 72 adopts conductive material.It is particularly preferred that above-mentioned speculum 70
Middle reflecting part 71 and drive division 72 adopt identical conduction reflectorized material, and are integrally formed.
In single pixel structure provided herein, speculum 70 includes penetrating portion 71 and drive division 72, and reflecting part 71 He
Drive division 72 is vertically arranged and forms T-shaped structure.By the both sides of drive division 72 in speculum 70, the first conductive component is set,
Apply after electrical opposite voltage to realize drive division 72 with left conductive part 31 or right conductive part 32, drive division 72 drives reflection simultaneously
The purpose of portion 71 counter substrate deflection.In such an embodiment, speculum 70 is made T-shaped structure so as in be located at vertical direction
Drive division 72 be arranged between left conductive part 31 and right conductive part 32, to increase speculum 70 and left conductive part 31 and right conduction
Corresponding surface between portion 32, increases the electromagnetically attraction after applying opposite-sign voltage, and then increases the anti-of speculum 70
Answer sensitivity.Meanwhile, there is the part that the speculum 70 of T-shaped structure electromagnetically attracted with the first conductive component 30 be mainly
It is positioned at the drive division 72 between left conductive part 31 and right conductive part 32, so that both is produced based on this applying opposite-sign voltage
The operation logic of electromagnetism shape attraction, can be less parallel to the area of section making of substrate 10 plane by reflecting part 71, with
It is adapted to dmd chip miniaturization, the making of miniaturization requires.
From structure shown in Fig. 3 a-3c can be seen that above-mentioned single pixel structure also includes arranging over the substrate 10 first exhausted
Edge layer 20, this first insulating barrier 20 forms fluted 22, the first conductive component 30 is arranged in this groove 22.The application is carried
For this structure pass through arrange the first insulating barrier 20 be the first conductive component 30 provide support force, do not reducing left conductive part 31
And right conductive part 32 and drive division 72 between while corresponding surface area, the body of left conductive part 31 and right conductive part 32 can be reduced
Long-pending, reduce the loss of conductive material.
In practical operation, this first insulating barrier 20 can be single layer structure, and in etched recesses 22, groove 22 with
Retain the insulating barrier of predetermined thickness between substrate 10, make there is insulation material between left conductive part 31 and right conductive part 32 and substrate 10
Material.Above-mentioned first insulating barrier 20 is also used as sandwich construction, for example, first form insulating bottom layer 23 on substrate, then at insulation bottom
Layer 23 on formed insulation surface layer 21 double-decker, can with etched recesses 22 when, to insulation surface layer 21 perform etching, be etched to
Till insulating bottom layer 23 surface.
In a kind of preferred embodiment of the application, the main view section view of this single pixel structure as shown in Fig. 4 a-4b is shown
It is intended to, the right side regards shown in cross-sectional schematic, in above-mentioned single pixel structure, left conductive part 31 and right conductive part 32 are towards drive division 72
Side has the second insulating barrier 40.Under normality, drive division 72 is not contacted with the second insulating barrier 40.Second insulation in such an embodiment
The setting of layer 40 can use as barrier sheet, it is to avoid drive division 72 and left conductive part 31 or right conductive part 32 are because electromagnetically attracting
Cause breaking phenomena during joint.Certainly this second can also be not provided with this single pixel structure provided herein
Insulating barrier 40, can be by arranging barrier sheet so that speculum 70 stops when deflecting into certain position in the first insulating barrier upper surface
Only, to avoid drive division 72 and left conductive part 31 and right conductive part 32 because producing collision when electromagnetically attracting.
In practical operation, this second insulating barrier 40 can be positioned only at left conductive part 31 and right conductive part 32 towards drive
The side in dynamic portion 72 is it is also possible to be concurrently formed at the exposed surface do not covered by left conductive part 31 and right conductive part 32 in groove 22
On, and then form a complete loop configuration.
In a kind of preferred embodiment of the application, in above-mentioned single pixel structure, also include the second conductive component 60, the
Two conductive components 60 are arranged on the first insulating barrier 20 and are electrically connected with speculum 70.This second conductive component 60 can be arranged
Can also be not provided with, if being not provided with this second conductive component 60, as long as will connect wires that speculum 70 is connected directly to（Can be straight
It is connected to drive division 72 in succession）, realize powering-on function, be preferably provided with this second conductive component 60, the second conductive component 60
Setting, by increasing capacitance it is possible to increase the connective stability connected wires, improves the stability of energising performance.
More electedly, above-mentioned second conductive component 60 includes front conductive part 61 and rear conductive part 62, front conductive part 61 and after
Conductive part 62 is arranged on the both sides of reflecting part 71, supports speculum 70 as supporting construction, and front conductive part 61 and rear conductive part
Line between 62 is perpendicular to the line between left conductive part 31 and right conductive part 32.Now, single pixel structure can refer to Fig. 3 a-
Structure shown in 3c.To be realized by the setting of the second conductive component 60 in this single pixel structure provided herein right simultaneously
The conductive effect with support of speculum 70, decreases the special step preparing supporting construction, increased the space utilization degree of structure,
Be conducive to reducing the solid space shared by single pixel structure further.In addition, arrange leading in this single pixel structure simultaneously
Electric portion 61 and rear conductive part 62, improve the stability of strutting system of speculum 70, and then are conducive to improve this single pixel structure
Operation stability.
In above-mentioned second conductive component 60 in addition to front conductive part 61 and rear conductive part 62, also include respectively with front conduction
Portion 61 or rear connected the connecting wires or similar structures of conductive part 62.
This single pixel structure provided herein mainly passes through drive division 72 and left conductive part 31 in practical operation
Or produced between right conductive part 32 electromagnetically attract to promote speculum 70 to deflect, anti-in speculum 70 in the process
The outer ledge penetrating portion 71 is located at the top of the first insulating barrier 20, even if reflecting part 71 and the first insulating barrier 20 during deflection
Come in contact the phenomenon that also can't produce open circuit.Although this contact will not produce the phenomenon of short circuit, can be to reflecting part
71 edge causes to wear and tear, and shortens the service life of this single pixel structure.Excellent in one kind of the application this single pixel structure
Select in embodiment, the height of front conductive part 61 and rear conductive part 62 is set to drive division 72 deflection and the second insulating barrier phase 40 phase
During contact, reflecting part 71 is not contacted with the upper surface of the first insulating barrier 20.By the setting of this relative distance, can avoid anti-
The edge penetrating portion 71 is touched with the upper surface of the first insulating barrier, reduces abrasion, is conducive to extending the use longevity of this single pixel structure
Life.
Preferably, pass through respectively between front conductive part 61 and rear conductive part 62 and reflecting part 71 in above-mentioned single pixel structure to prop up
Support beam 73 connects.In such an embodiment, the width of support beam 73（Direction perpendicular to front conductive part 61 and reflecting part 71 line）
For the equidirectional width of reflecting part 71 1/50～1/20.The setting of support beam 73, decreases reflecting part 71 in deflection suffered
Resistance, is conducive to improving the reaction susceptibility of single pixel structure.More preferably reflecting part 71, drive division 72 and support beam 73 1
Body formed.This integrally formed structure is conducive to improving the connective stability of speculum, with energising stability.
Preferably, in above-mentioned single pixel structure, drive division 72 cuts in the rectangular cross-section in the plane parallel to substrate 10
Face, the long side of square-section parallel to the line between front conductive part 61 and rear conductive part 62, the minor face of square-section parallel to
Line between left conductive part 31 and right conductive part 32.Using the structure of this rectangle, increase drive division 72 is conducive to lead with a left side
Electric portion 31 and the area of the corresponding part of right conductive part 32, so increase drive division 72 and left conductive part 31 or right conductive part 32 it
Between electromagnetically attraction.This single pixel structure provided herein can also be extended to by adjusting drive division 72
The length on the long side of rectangle of the depth between left conductive part 31 and right conductive part 32 and drive division 72 with adjust drive division 72 with
Left conductive part 31 and the area of the corresponding part of right conductive part 32, and then adjust driving voltage, increase the suitable of this single pixel structure
Use scope.
In a kind of embodiment in this application, additionally provide a kind of digital micro-mirror chip, including one group or many
Organize above-mentioned single pixel structure.Not only sensitivity is high for this digital micro-mirror chip, life-span length, and it is little to be adapted to digital micro-mirror chip
Type, the demand for development of miniaturization.
In a kind of embodiment in this application, additionally provide a kind of preparation method of single pixel structure, make in such as Fig. 5
Shown in Preparation Method schematic flow sheet, comprise the steps：
There is provided substrate 10, this substrate 10 can be using the silicon on monocrystalline silicon, polysilicon, and dielectric substrate（SOI）Deng；Can
Selection of land arranges the first insulating barrier over the substrate 10, this first insulating barrier can include but is not limited to SiO by material selection2, SiN, does not mix
Miscellaneous Si etc..
In substrate 10（Or alternatively insulating barrier）Upper formation includes the first conductive group of left conductive part 31 and right conductive part 32
Part；Can be complete by deposition formation one over the substrate 10 during forming this left conductive part 31 and right conductive part 32
Conductive material layer, then passes through using dry etching, wet etching, or the mode of dry method-wet-mixing etching formed mutually every
From left conductive part 31 and right conductive part 32, and pre-buried formation connects electricity with left conductive part 31 or right conductive part 32 are connected respectively
Line.This left conductive part 31 and right conductive part 32 can be metal material or any one conductive material.
Alternatively on the apparent surface of left conductive part 31 and right conductive part 32, form the second insulating barrier 40, this second insulation
The material of material and above-mentioned first insulating barrier of layer 40 can identical it is also possible to different, it includes but is not limited to SiO2, SiN, not
Doping Si etc..
Deposited sacrificial material 50, forms the first sacrifice portion 51 being located on left conductive part 31 and right conductive part 32 and is located at a left side
Between conductive part 31 and right conductive part 32（Or between the second insulating barrier being oppositely arranged）The second sacrifice portion 52.Art technology
The expendable material that the capable reasonable selection of personnel is suitable for, in the application, this expendable material preferably includes, but is not limited to PR, SiO2Deng.
The relatively left conductive part 31 of the thickness relationship in this first sacrifice portion 51 reflecting part 71 in speculum 70 and right conductive part 32 upper surface
Distance, those skilled in the art have the ability the thickness in this first sacrifice portion 51 of reasonable selection, wherein preferred this first sacrifice portion
51 thickness is suitable with reflecting part width.
Etch the second sacrifice portion 52, be internally formed drive division in the second sacrifice portion 52 and form groove 53；This drive division forms groove
53 depth is less than the depth in the second sacrifice portion 52, so that after removing expendable material, drive division 72 is vacantly arranged on a left side
Between conductive part 31 and right conductive part 32, and do not contact with substrate 10.The depth that this drive division forms groove 53 can be according to required drive
Dynamic voltage is adjusted, and those skilled in the art have the ability reasonably to be adjusted, and will not be described here.
It is etched through the first sacrifice portion 51 or the second sacrifice portion 52 to form supporting construction and form groove；Laying down support material,
Supporting construction forms and forms supporting construction in groove；This supporting construction adopts insulating materials to prepare, such as SiO2, SiN, undoped p Si etc.
So that the first conductive component 30 is connected with speculum 70 insulation.The structure of this supporting part can be arbitrary, as long as can be right
Speculum 70 is supported, and has certain pliability when speculum 70 stress deflects so as to can be in electromagnetically attraction
Drive under deflect.
The conductive reflectorized material 70 of deposition, formed the conductive reflective material layer being located in the first sacrifice portion 51 and supporting construction with
Form drive division 72 in groove 53 positioned at drive division；Mask is arranged on conductive reflective material layer, mask at least partly covers and propping up
The top of support structure；Etching conductive reflective material layer forms reflecting part 71, and pre-buried formation and connecting wires that speculum 70 is connected.
As long as wherein conductive reflectorized material is provided simultaneously with conductive and reflective function material can be used, preferably include, but is not limited to
AL, Ti, W etc..Wherein mask preferably employs photolithographic mask, and lithographic method preferably employs photoetching method.
Remove mask, described first sacrifice portion and the second sacrifice portion, form single pixel structure.
The preparation method of above-mentioned single pixel structure provided herein, step is simple, easily operates, and by rational
With each step with respect to the preparation method of single pixel structure of the prior art, the usage amount of mask can be reduced, reduces cost,
And improve and prepare yield.
In a kind of preferred embodiment in this application, additionally provide a kind of preparation method of single pixel structure, such as Fig. 6
Shown in preparation method schematic flow sheet, shown in the basal body structure change as shown in Fig. 7 to 15b, comprise the steps：
As shown in fig. 7, providing substrate 10, form the first insulating barrier 20 over the substrate 10, this insulating barrier 20 can be individual layer
Structure or inclusion setting insulating bottom layer 23 over the substrate 10 and the insulation surface layer 22 being arranged on insulating bottom layer 23
Sandwich construction.It is the double-decker including dielectric layers for the first insulating barrier in the figure 7.Wherein substrate 10 can adopt monocrystalline
Silicon on silicon, polysilicon, and dielectric substrate（SOI）Deng；First insulating barrier 20 can include but is not limited to SiO by material selection2,
SiN, undoped p Si etc..In the first insulating barrier 20, insulating bottom layer 23 and insulation surface layer 21 can select different materials, but excellent
Choosing adopts identical material.
As shown in figure 8, on the basis of Fig. 7 structure, in insulation surface layer 21, etching forms groove 22, and this groove 22 can be
The bottom member-retaining portion insulating materials of insulating barrier 21, also can penetrate this insulation surface layer 21 and form structure as shown in Figure 6.When this
When first insulating barrier 20 is Rotating fields, this groove 22 bottom needs member-retaining portion insulating materials to be isolated with substrate 10, shape
Become structure as shown in Figure 8.The step of etching insulation surface layer 21 can be using dry etching, wet etching or wet-dry change mixing
Etching.When etching forms groove 22, according to the cross section of drive division 72 to be formed, the cross section of groove 22 can be set to
Rectangular configuration.Preferably, the width of this groove 22 is preferably between 1/20 to the 1/5 of reflecting part 71 width.
As shown in figures 9 a and 9b, on the basis of Fig. 8 structure, form a left side in two opposing sidewall surfaces of groove 22 and lead
Electric portion 31 and right conductive part 32, and the formation first of connecting wires that pre-buried formation is connected with left conductive part 31 or right conductive part 32 respectively
Conductive component.Being formed can be directly in two opposed inner walls of groove 22 in this left conductive part 31 and the step of right conductive part 32
Upper deposition conductive material film forming is to form left conductive part 31 and right conductive part 32.Can also be by depositing formation one in groove 22
Individual complete conductive material layer, then passes through using dry etching, wet etching, or the mode of dry method-wet-mixing etching is carved
Lose this conductive material layer, formation is oppositely arranged, and mutually isolated left conductive part 31 and right conductive part 32, form such as Fig. 9 a and 9b
Shown in structure.This left conductive part 31 and right conductive part 32 can be metal material or any one material that can be energized.
As as-shown-in figures 10 a and 10b, on the basis of Fig. 9 a and Fig. 9 b structure, in left conductive part 31 and right conductive part 32
Apparent surface on form the second insulating barrier 40.The step forming this second insulating barrier 40 is optional, an and preferred step,
When forming this second insulating barrier 40, can carve after deposition of insulative material in groove 22 forms an insulating barrier completing
Erosion is formed.During etching, this insulating layer material can be etched and only retain positioned at left conductive part 31 and right conductive part 32
The second insulating barrier in opposite inner face；Left conductive part 31 and right conduction can also be located at by etching mid portion retaining
Outside insulating materials in the opposite inner face in portion 32, retain in groove simultaneously and do not covered by left conductive part 31 and right conductive part 32,
Expose the insulating materials on inner surface outside, form complete annular the second insulating barrier 40.Forming this second insulating barrier 40
During can also be by the inner surface that left conductive part 31 and right conductive part 32 are oppositely arranged, alternatively in groove 22 not
Covered by left conductive part 31 and right conductive part 32, expose on inner surface outside, direct shape on optional first insulation material layer
Second insulating barrier 40 of film-like.The material of this second insulating barrier 40 can be identical with the material of above-mentioned first insulating barrier 20,
Can be different, it includes but is not limited to SiO2, SiN, undoped p Si etc..
As shown in Figure 11 a and Figure 11 b, on the basis of Figure 10 a and Figure 10 b structure, deposited sacrificial material 50, formation is located at
The first sacrifice portion 51 on first insulating barrier 20, left conductive part 31 and right conductive part 32 and being located between the second insulating barrier 40（Not
When second insulating barrier 40 is set, between left conductive part and right conductive part）The second sacrifice portion 52；Those skilled in the art have energy
The expendable material that power reasonable selection is suitable for, in the application, this expendable material preferably includes, but is not limited to PR, SiO2Deng.This is first sacrificial
The relatively left conductive part 31 of the thickness relationship in domestic animal portion 51 reflecting part 71 in speculum 70 and the distance of right conductive part 32 upper surface, this
Skilled person has the ability the thickness in this first sacrifice portion 51 of reasonable selection, wherein preferably the thickness in this first sacrifice portion with anti-
Penetrate portion's width suitable.
As depicted in figs. 12 a and 12b, on the basis of Figure 11 a and Figure 11 b structure, etch the second sacrifice portion 52, second
Sacrifice portion 52 is internally formed drive division and forms groove 53；This drive division forms the depth less than the second sacrifice portion 52 for the depth of groove 53,
So that after removal expendable material, drive division 72 is vacantly arranged between left conductive part 31 and right conductive part 32, and not with
Substrate 10 contacts.The depth that this drive division forms groove 53 can be adjusted according to required driving voltage, and those skilled in the art have
Ability is reasonably adjusted, and will not be described here.
As shown in Figure 13 a and Figure 13 b, on the basis of Figure 12 a and Figure 12 b structure, it is etched through the first sacrifice portion 51 shape
The second conductive component is become to form groove；In a kind of preferred embodiment, it is etched through the first sacrifice portion 51 and forms the second conductive group
The step that part forms groove includes etching the step that leading electricity portion forms groove 54 and rear conductive part formation groove 55 simultaneously.This front conduction
The step 55 of portion's formation groove 54 and rear conductive part formation groove is located at the two of the middle separated time of left conductive part and right conductive part line respectively
Side, has structure as shown in figure 13b.
As shown in Figure 14 a and Figure 14 b, on the basis of Figure 13 a and Figure 13 b structure, formed in groove in the second conductive component
Deposition conductive material, forms the second conductive component 60.When the second conductive component formed groove include front conductive part formed groove 54 and after
Conductive part forms groove 55, and deposition conductive material forms front conductive part 61 and rear conductive part 62, and pre-buried formation and front conduction respectively
Portion 61 is connected with rear conductive part 62 and connects wires.
On this basis, deposit conductive reflectorized material 70 further, formed and be located at the first sacrifice portion 51 and the second conductive group
Part 60（Alternatively include front conductive part 61 and rear conductive part 62）On conductive reflective material layer and be located at drive division formed groove in
Drive division 72, arranges mask on conductive reflective material layer, and mask at least partly covers in the second conductive component 60（Alternatively wrap
Include front conductive part 61 and rear conductive part 62）Top；Etching conductive reflective material layer forms reflecting part.Formed such as after removing mask
Structure shown in Figure 14 a and 14b.Can as long as wherein conductive reflectorized material is provided simultaneously with conductive and reflective function material
Used, preferably included, but is not limited to Al, Ti, W etc..Wherein mask preferably employs photolithographic mask, and lithographic method preferably employs
Photoetching method.
In an advantageous embodiment, the second conductive component 60 and reflective mirror 70 adopt identical material, now, in figure
On the basis of 13a and Figure 13 b structure, deposit conductive reflectorized material, formed and be located at the second conduction that the second conductive component forms groove
Assembly 60（Alternatively include forming the front conductive part 61 in groove 54 positioned at front conductive part and be located in rear conductive part formation groove 55
Conductive part 62 afterwards）, conductive reflective material layer in the first sacrifice portion 51 and the second conductive component 60 and be located at drive division shape
Drive division 72 in grooving 53.Follow-up etching conductive reflective material layer formation reflecting part 71 by way of arranging mask again, removes
Form the structure as shown in Figure 14 a and 14b after mask.
In a kind of preferred embodiment, conductive reflective material layer is arranged in the step of mask, mask includes one
The corresponding film of first support beam of the corresponding film film both sides corresponding with being symmetricly set on reflecting part of reflecting part connecting and the second support beam
Corresponding film, the corresponding film of the first support beam at least partly covers above front conductive part 61, and the corresponding film of the second support beam is at least part of
Cover above rear conductive part 62.Now, form reflecting part 71 after etching conductive reflective material layer and connect reflecting part 71 respectively
Support beam 73 with front conductive part 61 and rear conductive part 62.In one kind more preferably embodiment, above-mentioned mask also includes connecting
Front conductive part in the corresponding film free end of the first support beam corresponds to film film free end corresponding with being connected to described second support beam
Conductive part corresponds to film afterwards.Now, except reflecting part 71 and connection reflection in the structure being formed after etching conductive reflective material layer
Outside the support beam 73 of portion 71 and front conductive part 61 and rear conductive part 62, also include being connected with support beam 73 and be located at front conductive part 61
On the first connection end and be connected with support beam 73 and be located at rear conductive part 62 on the second connection end, the setting of two connection ends
The connective stability of conductive part and speculum 70 before and after being conducive to improving.Formed as schemed after removing mask after completing etching procedure
Structure shown in 14a and 14b.
As shown in Figure 15 a and Figure 15 b, on the basis of Figure 14 a and Figure 14 b structure, remove the first sacrifice portion 51 and second
Sacrifice portion 52, forms the single pixel structure that the application to be protected.
In a kind of exemplary embodiment of the application, additionally provide a kind of preparation method of digital micro-mirror chip, this
The preparation method of digital micro-mirror chip is substantially the same with the preparation method of digital micro-mirror chip in prior art, and then wherein prepares
The step of single pixel structure adopts the preparation method of above-mentioned single pixel structure.Based on single pixel structure provided herein
The improvement of preparation method, the preparation method also relative simplicity of this digital micro-mirror chip, reduce cost, improve yield.
The preparation method of above-mentioned single pixel structure provided herein has following advantage
（1）Step is simple, easily operates, and by reasonably tying with respect to single pixel of the prior art with each step
The preparation method of structure, can reduce the usage amount of mask, reduces cost, and improves and prepare yield.
（2）In single pixel structure prepared by said method, speculum is made T-shaped structure so as in be located at vertically side
To drive division be arranged between left conductive part and right conductive part, to increase between speculum and left conductive part and right conductive part
Corresponding surface, increases the electromagnetically attraction after applying opposite-sign voltage, and then increases the reaction sensitivity of speculum.
（3）There is in single pixel structure prepared by said method the speculum of T-shaped structure and the first conductive component enters
The part that row electromagnetically attracts is mainly the drive division between left conductive part and right conductive part, is applied on the contrary based on this
Electrically voltage makes both produce the operation logic of electromagnetism shape attraction, can by reflecting part parallel to substrate plane area of section
Make is more little, is required with the making being adapted to dmd chip miniaturization, be miniaturized.
These are only the preferred embodiment of the application, be not limited to the application, for those skilled in the art
For member, the application can have various modifications and variations.All any modifications within spirit herein and principle, made,
Equivalent, improvement etc., should be included within the protection domain of the application.
Claims (18)
1. a kind of single pixel structure is it is characterised in that include：
Substrate,
First conductive component, arranges over the substrate, including left conductive part and right conductive part；
Speculum, is vacantly arranged on described by the supporting construction being arranged on described substrate or described first conductive component
Above one conductive component, described speculum include reflecting part and with described reflecting part vertically disposed drive division, described drive division
Extend partially between described left conductive part and right conductive part；
Under normality, described drive division is in the state vertical with described substrate top surface, and with described left conductive part and right conduction
Portion does not contact；When described left conductive part applies electrically contrary voltage with described drive division, described drive division is to described left conduction
Portion deflects；When described right conductive part applies electrically contrary voltage with drive division, described drive division deflects to described right conductive part；
Described single pixel structure is passed through following steps and is obtained：
Substrate is provided, forms the first insulating barrier over the substrate, etch described first insulating barrier, in described first insulating barrier
Form groove；
The first conduction including left conductive part and right conductive part is formed respectively on two relative sidewall surfaces of described groove
Assembly；
Deposited sacrificial material, formed be located at described first insulating barrier, the first sacrifice portion above left conductive part and right conductive part and
Positioned at the second sacrifice portion between described left conductive part and right conductive part；
Etch described second sacrifice portion, be internally formed drive division in described second sacrifice portion and form groove；
It is etched through described first sacrifice portion and form the second conductive component formation groove；
Deposition conductive material, forms, in described second conductive component, the second conductive component being formed in groove as supporting construction；
The conductive reflectorized material of deposition, forms the conductive reflectorized material being located in described first sacrifice portion and described second conductive component
Layer and the drive division being located in described drive division formation groove；
Described conduction reflective material layer arranges mask, described mask at least partly covers upper in described second conductive component
Side；
Etching described conduction reflective material layer forms reflecting part；
Remove described mask, described first sacrifice portion and the second sacrifice portion, form described single pixel structure.
2. single pixel structure according to claim 1 it is characterised in that described single pixel structure also include being arranged on described
The first insulating barrier on substrate, described first insulating barrier is formed fluted, and described first conductive component is arranged on described groove
Interior.
3. single pixel structure according to claim 1 is it is characterised in that described left conductive part and right conductive part are towards described
The side of drive division has the second insulating barrier, and under normality, described drive division is not contacted with described second insulating barrier.
4. single pixel structure according to claim 3 is it is characterised in that described single pixel structure also includes described second leads
Electrical component, described second conductive component is arranged on described first insulating barrier, and electrically connects with described reflecting part.
5. single pixel structure according to claim 4 it is characterised in that described second conductive component include front conductive part and
Conductive part afterwards, described front conductive part and rear conductive part are arranged on the both sides of described reflecting part, support institute as described supporting construction
State line between speculum, and described front conductive part and rear conductive part perpendicular between described left conductive part and right conductive part
Line.
6. single pixel structure according to claim 5 is it is characterised in that the height of described front conductive part and rear conductive part sets
When being set to the deflection of described drive division and contacting with the second insulating barrier, the described reflecting part not upper surface phase with described first insulating barrier
Contact.
7. single pixel structure according to claim 5 is it is characterised in that described front conductive part and rear conductive part are anti-with described
Penetrate and connected by support beam respectively between portion.
8. single pixel structure according to claim 7 is it is characterised in that described reflecting part, described drive division and described
Support beam is integrally formed.
9. single pixel structure according to claim 5 is it is characterised in that described drive division is flat parallel to described substrate
Rectangular cross-section section in face, the long side of described square-section is parallel to the company between described front conductive part and rear conductive part
Line, the minor face of square-section is parallel to the line between described left conductive part and right conductive part.
10. a kind of digital micro-mirror chip, including one or more groups of single pixel structures it is characterised in that each group single pixel structure bag
Include the single pixel structure any one of claim 1 to 9.
A kind of 11. preparation methods of single pixel structure are it is characterised in that comprise the steps：
Substrate is provided, forms the first insulating barrier over the substrate, etch described first insulating barrier, in described first insulating barrier
Form groove；
The first conduction including left conductive part and right conductive part is formed respectively on two relative sidewall surfaces of described groove
Assembly；
Deposited sacrificial material, formed be located at described first insulating barrier, the first sacrifice portion above left conductive part and right conductive part and
Positioned at the second sacrifice portion between described left conductive part and right conductive part；
Etch described second sacrifice portion, be internally formed drive division in described second sacrifice portion and form groove；
It is etched through described first sacrifice portion and form the second conductive component formation groove；
Deposition conductive material, forms, in described second conductive component, the second conductive component being formed in groove as supporting construction；
The conductive reflectorized material of deposition, forms the conductive reflectorized material being located in described first sacrifice portion and described second conductive component
Layer and the drive division being located in described drive division formation groove；
Described conduction reflective material layer arranges mask, described mask at least partly covers upper in described second conductive component
Side；
Etching described conduction reflective material layer forms reflecting part；
Remove described mask, described first sacrifice portion and the second sacrifice portion, form described single pixel structure.
12. preparation methods according to claim 11 are it is characterised in that before depositing described expendable material, be additionally included in
The step that second insulating barrier is formed on the apparent surface of described left conductive part and right conductive part.
13. preparation methods according to claim 11 are it is characterised in that described second conductive component and described reflective mirror
Material is identical, after completing the step of described second conductive component formation groove, the conductive reflectorized material of deposition, and form described second simultaneously
Conductive component, conductive reflective material layer and drive division.
14. preparation methods according to claim 11 are it is characterised in that form the step of described left conductive part and right conductive part
Rapid inclusion：
Directly in two opposed inner walls of described groove, deposit conductive material, form membranaceous left conductive part and right conductive part；Or
Person
Deposit conductive material in described groove, form conductive material layer, then etch described conductive material layer and form a described left side and lead
Electric portion and right conductive part.
15. preparation methods according to claim 11 form second it is characterised in that being etched through described first sacrifice portion
The step that conductive component forms groove includes：Etch in the both sides of described left conductive part and the middle separated time of right conductive part line respectively
The front conductive part of formation forms the step that groove and rear conductive part form groove.
16. preparation methods according to claim 15 are it is characterised in that in the step of described setting mask, described cover
The first support beam that film includes the corresponding film film both sides corresponding with being symmetricly set on described reflecting part of reflecting part of integrally connected corresponds to
Film and the second support beam correspond to film, and described first support beam corresponds to film and at least partly covers above described front conductive part, described
At least part of covering of the corresponding film of second support beam is in the rear above conductive part.
17. preparation methods according to claim 16 are it is characterised in that arrange mask on described conduction reflective material layer
Step in, described mask also includes being connected to the corresponding film of front conductive part and the connection of the corresponding film free end of described first support beam
Rear conductive part in the corresponding film free end of described second support beam corresponds to film.
A kind of 18. preparation methods of digital micro-mirror chip, the step including preparation single pixel structure is it is characterised in that preparation is single
The step of dot structure adopts the preparation method of the single pixel structure any one of claim 11 to 17.
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| JP6519284B2 (en) * | 2015-04-01 | 2019-05-29 | セイコーエプソン株式会社 | Electro-optical device, method of manufacturing electro-optical device, and electronic apparatus |
| JP6778134B2 (en) | 2017-03-14 | 2020-10-28 | 浜松ホトニクス株式会社 | Optical module and its mounting method |
| US11513339B2 (en) | 2017-03-14 | 2022-11-29 | Hamamatsu Photonics K.K. | Optical module |
| WO2018168935A1 (en) * | 2017-03-14 | 2018-09-20 | 浜松ホトニクス株式会社 | Optical module |
| US11561388B2 (en) | 2017-03-14 | 2023-01-24 | Hamamatsu Photonics K.K. | Light module |
| CN114779464A (en) * | 2022-05-24 | 2022-07-22 | 北京有竹居网络技术有限公司 | Optical signal modulator, control method and projection equipment |
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| US7042619B1 (en) * | 2004-06-18 | 2006-05-09 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
| CN202256877U (en) * | 2011-09-30 | 2012-05-30 | 上海丽恒光微电子科技有限公司 | Digital micro-lens device |
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| US7075699B2 (en) * | 2003-09-29 | 2006-07-11 | The Regents Of The University Of California | Double hidden flexure microactuator for phase mirror array |
| US8858811B2 (en) * | 2003-11-01 | 2014-10-14 | Fred Ishii | Method for manufacturing a mirror device by means of a plurality of sacrificial layers |
| JP2007248731A (en) * | 2006-03-15 | 2007-09-27 | Hitachi Metals Ltd | Micromirror, and optical component and optical switch using the micromirror |
| US20090251760A1 (en) * | 2008-04-02 | 2009-10-08 | Spatial Photonics, Inc. | Micro mirrors having improved hinges |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7042619B1 (en) * | 2004-06-18 | 2006-05-09 | Miradia Inc. | Mirror structure with single crystal silicon cross-member |
| CN202256877U (en) * | 2011-09-30 | 2012-05-30 | 上海丽恒光微电子科技有限公司 | Digital micro-lens device |
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