CN104213093A - Substrate movement method for improving film thickness uniformity of magnetron sputtering rectangular target - Google Patents
Substrate movement method for improving film thickness uniformity of magnetron sputtering rectangular target Download PDFInfo
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- CN104213093A CN104213093A CN201410487017.4A CN201410487017A CN104213093A CN 104213093 A CN104213093 A CN 104213093A CN 201410487017 A CN201410487017 A CN 201410487017A CN 104213093 A CN104213093 A CN 104213093A
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Abstract
The invention discloses a substrate movement method for improving film thickness uniformity of a magnetron sputtering rectangular target. A bar-type annular etching ring is arranged on the target; a circular substrate faces to the rectangular target, and reciprocates between a first turning point 1 and a second turning point 2 arranged in symmetric positions at the two sides of the rectangular target; the method comprises the following contents: the circular substrate synchronously performs the uniform linear motion and the uniform spinning motion in a distance length D between the first turning point 1 and the second turning point 2, and the time length of the circular substrate synchronously performing the uniform linear motion and the uniform spinning motion from the first turning point 1 to the second turning point 2 is a first time length t1; when the circular substrate is in the first turning point 1 or the second turning point 2, the circular substrate stops by a second time length t2, and only performs the uniform spinning motion; and the ratio of the first time length t1 to the second time length t2 is adjusted to enable the circular substrate to obtain the film thickness uniformity so as to realize the technical effect of improving the film thickness uniformity.
Description
Technical field
The present invention relates to technical field of film preparation, be specifically related to a kind of substrate motion method improving magnetron sputtering rectangular target film uniformity.
Background technology
Most film is when applying, and its thickness evenness all must meet requirement to a certain degree.Sputtering is a kind of conventional method for manufacturing thin film, for improving film uniformity, normally according to the shape (planar rondure target, rectangular target, subtend target, hollow cathode target etc.) of sputtering target, adopt suitable substrate-target relative movement method, and optimize relative geometrical orientation and the distance of substrate and target.
For rectangular plane sputtering target, currently used substrate motion mode mainly contains the modes such as rectilinear scanning formula, circumference rotary scanning type, planetary motion type (public rotation associated reaction).No matter which kind of mode, target center is all worn and mistake in the center due to substrate, and the film of deposition is the thickest, and the marginal position that on substrate, decentering is far away, pass away from target center, the film of deposition is thinner.
Practical magnetron sputtering system for the deposition of optical multilayer coatings, Applied Optics, 31 (19): 1992,3784 reports, for being fixed on rectangular target cylindrical vacuum chamber sidewall being of a size of 15cm × 46cm, when target maintains static, coating thickness nonuniformities is better than the region of 5% only in the ellipse of 5cm × 10cm; And when twisting when about frame substrate, the area of 4% film uniformity increases to 10cm × 18cm.
Thickness also can adopt Theoretical Calculation, and many sections of documents are verified, and the result of calculating can be consistent with practical situation height.For the planar rectangular target being of a size of 180mm × 60mm × 5mm, its sputtering runway is similar to stadium of track and field, the long 100mm of straight flange, bend place internal diameter r
1=10mm, external diameter r
2=25mm.When above substrate is fixed on target, 70mm is motionless, on diameter 100mm substrate, film thickness distribution as shown in Figure 1.This distribution is as the 3D shape of same freshwater mussel of slightly opening, namely, thickness is comparatively mild along the change of the long side direction of target, and it is very violent in the change of short side direction, particularly at the least significant end of minor face, the edge of substrate is beyond the effective area of sputtering ring, and thickness herein only has about 50% of center.
When substrate target left and right sides symmetric position back and forth straight reciprocating motion time (height 70mm, to-and-fro movement spacing 60mm), film thickness distribution is as shown in Figure 2.With substrate stationary phase ratio, film thickness distribution not great improvement, still as a freshwater mussel, the angle of just opening become larger.Plant at this point, the thickness of edge is only equivalent to about 57% of center.
Therefore, in prior art, on substrate, when film former, there is the technical problem in uneven thickness of film at employing magnetron sputtering method.
Summary of the invention
The embodiment of the present invention is by providing a kind of substrate motion method improving magnetron sputtering target film uniformity, to solve in prior art at employing magnetron sputtering method on substrate during film former, there is the technical problem in uneven thickness of film, and then achieve the technique effect that can improve film gauge uniformity.
The embodiment of the present invention provides
A kind of substrate motion method improving magnetron sputtering rectangular target film uniformity, target there is the etching ring of bar shaped ring-type, circular substrate is in the face of described rectangular target, in described rectangular target zygomorphy position, to-and-fro movement between the first switch-back point 1 and the second switch-back point 2 is set, it is characterized in that, comprise following content:
Circular substrate carries out linear uniform motion and at the uniform velocity spinning motion in the first switch-back point 1 and the second switch-back point 2 between the distance length for D simultaneously, and circular substrate carries out linear uniform motion by the first switch-back point 1 simultaneously and at the uniform velocity spinning motion arrives the duration of the second switch-back point 2 is the first duration t
1;
When circular substrate is in the first switch-back point 1 or the second switch-back point 2 place, circular substrate stops the second duration t
2only make at the uniform velocity spinning motion;
Regulate the first duration t
1with the second duration t
2ratio, make the film thickness of circular substrate even.
Further, when the first switch-back point 1 and the second switch-back point 2 increase at a distance of the distance length being D, the second duration t is regulated
2reduce.
Further, circular substrate, when the first switch-back point 1 and the second switch-back point 2 carry out linear uniform motion between the distance length for D, is move along the central axis of vertical described rectangular target long side direction.
Further, described method also comprises: the speed V of linear uniform motion and the speed w of at the uniform velocity rotation that regulate distance length D between the first switch-back point 1 and the second switch-back point 2 and circular substrate
1, make D/V>6 π/w
1.
Adopt one or more technical scheme in the present invention, there is following beneficial effect:
Owing to adopting at circular substrate in the face of rectangular target is placed, in rectangular target zygomorphy position, to-and-fro movement between the first switch-back point 1 and the second switch-back point 2 is set, wherein, circular substrate carries out linear uniform motion and at the uniform velocity spinning motion in the first switch-back point 1 and the second switch-back point 2 between the distance length for D simultaneously, and circular substrate carries out linear uniform motion by the first switch-back point 1 simultaneously and at the uniform velocity spinning motion arrives the duration of the second switch-back point 2 is the first duration t
1; When circular substrate is in the first switch-back point 1 or the second switch-back point 2 place, circular substrate stops the second duration t
2only make at the uniform velocity spinning motion; Regulate the first duration t
1with the second duration t
2ratio, make the film thickness of circular substrate even, so, solve in prior art,, there is the technical problem in uneven thickness of film, and then achieve the technique effect that can improve film gauge uniformity during film former at employing planar rectangular magnetron sputtering method on substrate.
Accompanying drawing explanation
Fig. 1 is film thickness distribution figure when substrate maintains static in prior art;
Film thickness distribution figure when Fig. 2 is substrate translation scanning in prior art;
Fig. 3 be in prior art substrate translation scanning and FAST SPIN time film thickness distribution figure;
Fig. 4 is film thickness distribution figure when substrate translation scanning is also spinned at a slow speed in prior art;
Fig. 5 is film thickness distribution figure when substrate also only carries out spin motion along short side direction bias in prior art;
Fig. 6 is the relative movement schematic diagram of substrate and target in the embodiment of the present invention;
Fig. 7 is the film thickness distribution figure in the embodiment of the present invention under substrate motion mode;
Wherein: 1 is rectangular target; 2 is circular substrate; 3 is sputtering ring.
Embodiment
The embodiment of the present invention is by providing a kind of substrate motion method improving magnetron sputtering target film uniformity, to solve in prior art at employing magnetron sputtering method on substrate during film former, there is the technical problem in uneven thickness of film, and then achieve the technique effect that can improve film gauge uniformity.
Above-mentioned adopting magnetron sputtering method on substrate during film former, the technical problem that the uneven film thickness that existence generates is even in order to solve, below in conjunction with Figure of description and concrete embodiment, technical scheme of the present invention is described in detail.
In existing technology, such as, planar rectangular target is of a size of 180mm × 60mm × 5mm, the long 100mm of sputtering runway district straight flange, bend place internal diameter r
1=10mm, external diameter r
2=25mm.The basic theories of cosine law is met based on little the circle emission characteristic in space in sputtering ring, learnt by the emulation of MATLAB, when real estate to target while carry out straight reciprocating motion, while (the interplanar distance of target and substrate when carrying out spinning motion, usually be 70mm also referred to as target-substrate distance, to-and-fro movement spacing 120mm, translational motion 1 rotation 5 is enclosed), obtain film thickness distribution thus as shown in Figure 3.
With only carry out compared with straight reciprocating motion, film uniformity has had very large improvement.Owing to adding spin, film thickness distribution picture half ellipsoid, no longer includes along the long limit of rectangular target and dividing of minor face, presents polar coordinates symmetry.Although the film on substrate is still the thinnest in edge, reach about 91.5% of thickness, center.
Obtain above-mentioned axiolitic film thickness distribution, roll rate is enough fast.When other parameter constants, and when spin number of times is reduced to 1 circle, as shown in Figure 4, ellipsoid there occurs distortion to film thickness distribution, and symmetry reduces.
And when substrate remains on above-mentioned switch-back point and only has spinning motion (along short side direction eccentric distance 60mm), film thickness distribution as shown in Figure 5.Now, film thickness distribution is put upside down completely.Because substrate edges place can by rotating inswept sputtering ring, its thickness is the thickest on the contrary.Otherwise substrate center departs from far away outside sputtering ring, thickness is not herein the thickest but the thinnest, is edge about 91%.
Visible by above-mentioned analysis, when substrate is only in the shuttle-scanning/spin motion of target both sides, the thickness at place of substrate center is the thickest, and radially low order is thinning; And when substrate center be offset to sputtering ring only do spin motion outward time, be that the thickness of substrate center is the thinnest on the contrary.Based on these two kinds just in time contrary film thickness distribution, the present invention proposes above-mentioned two kinds of mode of motion to combine, and carries out thickness and compensates with the method obtaining better film thickness distribution.
Therefore, in the embodiment of the present invention one, employing circular substrate as shown in Figure 6 and the rectangular target of 180mm × 60mm × 5mm, target-substrate distance adopts 70mm, the distance D arranged between two switch-back point to be 120mm.First circular substrate being moved to eccentricity is 60mm place, until copper target pre-sputtering after 3 minutes, open baffle plate (not shown), drive substrate between two switch-back point, to carry out rectilinear scanning motion with uniform linear velocity V=20mm/s, then translational motion 1 needs 6s by motor (not shown).While translational motion, substrate is driven at the uniform velocity to spin with the speed of 0.8r/s by motor (not shown).When arriving any one switch-back point, disable motor 1 makes substrate only do 0.8r/s spin, and keeps 36s duration.Under aforesaid substrate mode of motion, as shown in Figure 7, coating thickness nonuniformities is less than 3% to film thickness distribution.
In embodiment two, compared with embodiment one, only changing the space D of shuttle-scanning, have the 120mm of embodiment one to increase to 140mm, then shorten to some extent between the eccentric time rotational compensated mutually with it, is 12s, and in this embodiment two, coating thickness nonuniformities is close to 3%.
When adopting magnetron sputtering method to sputter substrate, can be specifically magnetically controlled DC sputtering, rf magnetron sputtering, medium frequency magnetron sputtering, and pulsed magnetron sputtering etc., be just no longer described in detail in embodiments of the present invention.
Therefore, by adopting the technical scheme of the embodiment of the present invention, not only simple, for rectangular target, can be by diameter 100mm whole physa plate on the heterogeneity of thickness control within 3%-4%, large-area film uniformity can be realized.
Claims (4)
1. one kind is improved the substrate motion method of magnetron sputtering rectangular target film uniformity, target there is the etching ring of bar shaped ring-type, circular substrate is in the face of described rectangular target, in described rectangular target zygomorphy position, to-and-fro movement between the first switch-back point 1 and the second switch-back point 2 is set, it is characterized in that, comprise following content:
Circular substrate carries out linear uniform motion and at the uniform velocity spinning motion in the first switch-back point 1 and the second switch-back point 2 between the distance length for D simultaneously, and circular substrate carries out linear uniform motion by the first switch-back point 1 simultaneously and at the uniform velocity spinning motion arrives the duration of the second switch-back point 2 is the first duration t
1;
When circular substrate is in the first switch-back point 1 or the second switch-back point 2 place, circular substrate stops the second duration t
2only make at the uniform velocity spinning motion;
Regulate the first duration t
1with the second duration t
2ratio, make the film thickness of circular substrate even.
2. the substrate motion method of raising magnetron sputtering rectangular target film thickness homogeneity according to claim 1, is characterized in that, when the first switch-back point 1 and the second switch-back point 2 increase at a distance of the distance length being D, regulates the second duration t
2reduce.
3. the substrate motion method of raising magnetron sputtering rectangular target film thickness homogeneity according to claim 1, it is characterized in that, circular substrate, when the first switch-back point 1 and the second switch-back point 2 carry out linear uniform motion between the distance length for D, is move along the central axis of vertical described rectangular target long side direction.
4. the substrate motion method of raising magnetron sputtering rectangular target film thickness homogeneity according to claim 1, it is characterized in that, described method also comprises:
Regulate the speed V of linear uniform motion and the speed w of at the uniform velocity rotation of distance length D between the first switch-back point 1 and the second switch-back point 2 and circular substrate
1, make D/V>6 π/w
1.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108179388A (en) * | 2018-01-29 | 2018-06-19 | 京东方科技集团股份有限公司 | Method, the preparation method of touch base plate of sputtered layer are formed on substrate layer |
| CN111051910A (en) * | 2017-09-29 | 2020-04-21 | 昭和电工株式会社 | Method for manufacturing magnetic sensor and magnetic sensor assembly |
| CN112725769A (en) * | 2021-04-02 | 2021-04-30 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition method and apparatus using electronic cam control |
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| JP2003013219A (en) * | 2001-06-27 | 2003-01-15 | Anelva Corp | Magnetron sputtering apparatus |
| CN101586234A (en) * | 2009-06-18 | 2009-11-25 | 电子科技大学 | Method for determining optimized rotation speed ratio of rectangular target of multi-station coating system |
| JP2012017496A (en) * | 2010-07-07 | 2012-01-26 | Sumitomo Metal Mining Co Ltd | Magnetron sputtering apparatus and method for producing transparent conductive film |
| CN103422066A (en) * | 2012-05-21 | 2013-12-04 | 株式会社爱发科 | Sputtering method |
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2014
- 2014-09-23 CN CN201410487017.4A patent/CN104213093B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003013219A (en) * | 2001-06-27 | 2003-01-15 | Anelva Corp | Magnetron sputtering apparatus |
| CN101586234A (en) * | 2009-06-18 | 2009-11-25 | 电子科技大学 | Method for determining optimized rotation speed ratio of rectangular target of multi-station coating system |
| JP2012017496A (en) * | 2010-07-07 | 2012-01-26 | Sumitomo Metal Mining Co Ltd | Magnetron sputtering apparatus and method for producing transparent conductive film |
| CN103422066A (en) * | 2012-05-21 | 2013-12-04 | 株式会社爱发科 | Sputtering method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111051910A (en) * | 2017-09-29 | 2020-04-21 | 昭和电工株式会社 | Method for manufacturing magnetic sensor and magnetic sensor assembly |
| CN108179388A (en) * | 2018-01-29 | 2018-06-19 | 京东方科技集团股份有限公司 | Method, the preparation method of touch base plate of sputtered layer are formed on substrate layer |
| CN112725769A (en) * | 2021-04-02 | 2021-04-30 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition method and apparatus using electronic cam control |
| CN112725769B (en) * | 2021-04-02 | 2021-07-23 | 上海陛通半导体能源科技股份有限公司 | Vapor deposition method and apparatus using electronic cam control |
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