RU2009143289A - METHOD FOR DEPOSITION OF THIN FILMS OF FERROELECTRICIANS BASED ON COMPLEX OXIDES BY ION-PLASMA SPRAYING METHOD - Google Patents
METHOD FOR DEPOSITION OF THIN FILMS OF FERROELECTRICIANS BASED ON COMPLEX OXIDES BY ION-PLASMA SPRAYING METHOD Download PDFInfo
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- RU2009143289A RU2009143289A RU2009143289/02A RU2009143289A RU2009143289A RU 2009143289 A RU2009143289 A RU 2009143289A RU 2009143289/02 A RU2009143289/02 A RU 2009143289/02A RU 2009143289 A RU2009143289 A RU 2009143289A RU 2009143289 A RU2009143289 A RU 2009143289A
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Abstract
1. Способ осаждения тонких пленок сегнетоэлектриков на основе сложных оксидов методом ионно-плазменного распыления путем нанесения на подложку, расположенную на аноде, атомов мишени, выполненной из сложных оксидов сегнетоэлектриков, отличающийся тем, что подложку размещают в области проекции зоны активного распыления мишени, а между ней и мишенью параллельно оси системы распыления устанавливают цилиндрический экран, выполненный из диэлектрического материала, диаметр которого соизмерим с размерами подложки. ! 2. Способ получения тонкопленочных структур сложных оксидов по п.1, отличающийся тем, что в качестве сложных оксидов использован оксид BSTO. ! 3. Способ получения тонкопленочных структур сложных оксидов по п.1, отличающийся тем, что в качестве сложных оксидов использован оксид PZTO. 1. The method of deposition of thin films of ferroelectrics based on complex oxides by ion-plasma spraying by applying to a substrate located on the anode, target atoms made of complex oxides of ferroelectrics, characterized in that the substrate is placed in the projection area of the active sputtering area of the target, and between a cylindrical screen made of a dielectric material, the diameter of which is commensurate with the size of the substrate, is mounted with it and the target parallel to the axis of the spraying system. ! 2. A method for producing thin-film structures of complex oxides according to claim 1, characterized in that BSTO oxide is used as complex oxides. ! 3. The method of producing thin-film structures of complex oxides according to claim 1, characterized in that PZTO oxide is used as complex oxides.
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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RU2009143289/02A RU2434078C2 (en) | 2009-11-23 | 2009-11-23 | Procedure for sedimentation of thin films of ferroelectric on base of complex oxides by method of ion-plasma sputtering |
Applications Claiming Priority (1)
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RU2009143289/02A RU2434078C2 (en) | 2009-11-23 | 2009-11-23 | Procedure for sedimentation of thin films of ferroelectric on base of complex oxides by method of ion-plasma sputtering |
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RU2009143289A true RU2009143289A (en) | 2011-05-27 |
RU2434078C2 RU2434078C2 (en) | 2011-11-20 |
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RU2009143289/02A RU2434078C2 (en) | 2009-11-23 | 2009-11-23 | Procedure for sedimentation of thin films of ferroelectric on base of complex oxides by method of ion-plasma sputtering |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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RU2511636C2 (en) * | 2012-05-23 | 2014-04-10 | Учреждение образования "Гомельский государственный университет имени Франциска Скорины", ул. Советская, 104 | Sol-gel method of forming ferroelectric strontium-bismuth-tantalum oxide film |
RU2682118C1 (en) * | 2018-04-16 | 2019-03-14 | Андрей Анатольевич Одинец | Solid solutions ferroelectric films production method |
RU2700901C1 (en) * | 2019-02-07 | 2019-09-23 | Федеральное государственное автономное образовательное учреждение высшего образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина) | METHOD OF PRODUCING FERROELECTRIC FILMS Βa1-XSrXTiO3 |
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RU2434078C2 (en) | 2011-11-20 |
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Effective date: 20171124 |