CN104201183A - Image sensor pixel and production method thereof - Google Patents
Image sensor pixel and production method thereof Download PDFInfo
- Publication number
- CN104201183A CN104201183A CN201410449173.1A CN201410449173A CN104201183A CN 104201183 A CN104201183 A CN 104201183A CN 201410449173 A CN201410449173 A CN 201410449173A CN 104201183 A CN104201183 A CN 104201183A
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- Prior art keywords
- image sensor
- photoresist
- sensor pixel
- transistor device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 238000013459 approach Methods 0.000 claims description 6
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 238000004528 spin coating Methods 0.000 claims description 5
- 238000000992 sputter etching Methods 0.000 claims description 5
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 abstract description 7
- 230000000903 blocking effect Effects 0.000 abstract description 3
- 206010034960 Photophobia Diseases 0.000 abstract 1
- 208000013469 light sensitivity Diseases 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 5
- 235000014698 Brassica juncea var multisecta Nutrition 0.000 description 4
- 241000251184 Rajiformes Species 0.000 description 4
- 206010070834 Sensitisation Diseases 0.000 description 3
- 230000008313 sensitization Effects 0.000 description 3
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 208000034189 Sclerosis Diseases 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14607—Geometry of the photosensitive area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
Abstract
The invention discloses an image sensor pixel with high sensitivity and a production method thereof. The image sensor pixel comprises a photoelectric diode region and a transistor device region. The photoelectric diode region is higher than the transistor device region, the optical path of incident light is shortened, and the shielding influence of metal interconnection wires on the incident light is reduced, the light blocking influence of metal on the light sensitivity of the pixel can be avoided or reduced, and thus, sensitivity of the image sensor pixel is improved.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of image sensor pixel and preparation method thereof.
Background technology
Imageing sensor mainly comprises two types of CCD (charge coupled device) type imageing sensor and CMOS (complementary metal oxide semiconductors (CMOS)) type imageing sensors, the photosensitive pixel that above-mentioned two kinds of imageing sensors of the prior art adopt comprises photodiode area and transistor device region, and described photodiode area and transistor device region are in the same plane.
As shown in Figure 1, for image sensor pixel tangent plane schematic diagram of the prior art, wherein 101 is photodiode, 102 is charge pass transistor, 103 is dielectric silicon phosphorus glass, 104 for being embedded in the metal interconnecting wires in 103, and STI is shallow trench isolation region, and θ 1 is the angle of two rim raies.Photodiode 101 is produced in semiconductor substrate with charge pass transistor 102, and both are in the same plane; The scope of 101 incident lights that can receive is the light between two rim raies shown in Fig. 1, and the light in θ 1 scope can not blocked by metal and enter photodiode.
As can be seen here, in prior art, the sensitization of image sensor pixel is subject to the impact of metal interconnecting wires, and top-level metallic is higher apart from photodiode, and the light path of incident light is longer, and the light amount that metal blocks is more, and the luminous sensitivity of pixel is lower.Smithcraft height of the prior art is subject to rule limits, so the height and position of metal can not reduce easily; And along with dwindling of elemental area, the impact that metal is in the light highlights all the more.
Summary of the invention
The object of this invention is to provide a kind of highly sensitive image sensor pixel and preparation method thereof.
The object of the invention is to be achieved through the following technical solutions:
Image sensor pixel of the present invention, comprises photodiode area, transistor device region, and the surface of described photodiode area is higher than the surface in described transistor device region.
The manufacture method of above-mentioned image sensor pixel of the present invention, the technique of described photodiode comprises step before being produced on the technique of described transistor device:
A, provide semiconductor substrate;
B, spin coating photoresist, its thickness is at least 0.1um;
C, photoresist expose and develop, and stay glue at photodiode area, and it stays glue size to be less than or equal to photodiode size;
D, heating and melting photoresist, melt photoresist for spherical or near-spherical, and the temperature of its heating is 200 degrees Celsius～300 degrees Celsius, is then cooled to room temperature;
E, dry method ion etching, photodiode area photoresist keeps being etched gradually with spherical or near-spherical, and first the photoresist of bulbous rim is etched, and is then the thicker photoresist that approaches ball top, is finally the photoresist on ball top; After photoresist is etched, can continue to keep the mode etching semiconductor matrix with spherical or near-spherical, the final photodiode area that forms spherical or near-spherical, transistor device region keeps k level position in etching process, and the peak of photodiode area at least exceeds 0.1um than transistor device region.
As seen from the above technical solution provided by the invention, image sensor pixel that the embodiment of the present invention provides and preparation method thereof, because photodiode area is higher than transistor device region, shorten the light path of incident light, reduce the impact of blocking of metal interconnecting wires on incident light, can solve or reduce the impact that metal is in the light on pixel sensitization, the sensitivity that improves image sensor pixel.
Brief description of the drawings
Fig. 1 is the tangent plane schematic diagram of the image sensor pixel of prior art.
Fig. 2 is the tangent plane schematic diagram of image sensor pixel of the present invention.
Fig. 3 is the semiconductor substrate schematic diagram in image sensor pixel embodiment of the present invention.
Fig. 4 is the spin coating photoresist step schematic diagram in the photodiode area manufacture craft in image sensor pixel embodiment of the present invention.
Fig. 5 is photoresist exposure the development step schematic diagram in the photodiode area manufacture craft in image sensor pixel embodiment of the present invention.
Fig. 6 is the heating and melting photoresist step schematic diagram in the photodiode area manufacture craft in image sensor pixel embodiment of the present invention.
Fig. 7 is the dry method ion etching step schematic diagram in the photodiode area manufacture craft in image sensor pixel embodiment of the present invention.
Fig. 8 is that the photodiode area in image sensor pixel embodiment of the present invention is made the tangent plane schematic diagram when complete.
Embodiment
To be described in further detail the embodiment of the present invention below.
Image sensor pixel of the present invention, its preferably embodiment be:
Comprise photodiode area, transistor device region, the surface of described photodiode area is higher than the surface in described transistor device region.
Described photodiode area raises up with ball-shape or globoid type shape.
The peak of described photodiode area projection at least exceeds 0.1um than the surface in described transistor device region.
Described photodiode area does not arrange metal interconnecting wires, and described metal interconnecting wires is only arranged on transistor device region.
Described transistor device region comprises charge pass transistor.
Described image sensor pixel is for CMOS type imageing sensor or for CCD type imageing sensor.
The manufacture method of above-mentioned image sensor pixel of the present invention, its preferably embodiment be:
The technique of described photodiode comprises step before being produced on the technique of described transistor device:
A, provide semiconductor substrate;
B, spin coating photoresist, its thickness is at least 0.1um;
C, photoresist expose and develop, and stay glue at photodiode area, and it stays glue size to be less than or equal to photodiode size;
D, heating and melting photoresist, melt photoresist for spherical or near-spherical, and the temperature of its heating is 200 degrees Celsius～300 degrees Celsius, is then cooled to room temperature;
E, dry method ion etching, photodiode area photoresist keeps being etched gradually with spherical or near-spherical, and first the photoresist of bulbous rim is etched, and is then the thicker photoresist that approaches ball top, is finally the photoresist on ball top; After photoresist is etched, can continue to keep the mode etching semiconductor matrix with spherical or near-spherical, the final photodiode area that forms spherical or near-spherical, transistor device region keeps k level position in etching process, and the peak of photodiode area at least exceeds 0.1um than transistor device region.
Image sensor pixel of the present invention and preparation method thereof, image sensor pixel comprises photodiode area, transistor device region, its photodiode area outwardly convex, because photodiode area is higher than transistor device region, shorten the light path of incident light, this has shortened the light path of the light of photodiode acceptance, thereby reduce the impact of blocking of metal interconnecting wires on incident light, and then effectively improved the luminous sensitivity of image sensor pixel.Can solve or reduce the impact that metal is in the light on pixel sensitization, the sensitivity that improves image sensor pixel.
Specific embodiment:
The present invention starts with from optimizing pixel device structure, makes photodiode area higher than transistor device region, reduces the relative altitude of photodiode and top-level metallic interconnection line, and then effectively reduces the impact of metal shading.
Be illustrated in figure 2 the tangent plane schematic diagram of image sensor pixel of the present invention.In Fig. 2,201 is photodiode area, and 202 is charge pass transistor, and 203 is dielectric silicon phosphorus glass district, and 204 for being embedded in the metal interconnecting wires in 203, and STI is the shallow trench isolation region between device, and θ 2 is the angle of two rim raies.Wherein, photodiode 201 region surface are higher than transistor device region, and 201 with respect to transistor device region projection, and 201 with ball-shape or globoid type mode outwardly convex, and 201 peak is at least 0.1um with respect to the height in transistor device region; 201 regions do not arrange metal interconnecting wires, and metal interconnecting wires is only arranged on transistor device region.Described transistor device region, at least comprises charge pass transistor 202.Image sensor pixel of the present invention not only can be for CCD type imageing sensor, also can be for cmos image sensor.
In dot structure of the present invention, the angle theta 2 of two rim raies is greater than θ 1 of the prior art, and therefore pixel can receive the light of more perspective, and then has effectively improved the luminous sensitivity of pixel.
Image sensor pixel of the present invention, important feature is photodiode 201 regions with ball-shape or globoid type mode outwardly convex, different from the pixel planes feature of prior art.Describe the manufacturing process of photodiode of the present invention below in detail.
Before the technique of described male-type photodiode 201 is produced on logical device technique, its method step is as follows:
First, provide semiconductor substrate, as shown in Figure 3, wherein, 301 marking matrix surface plan position approachs;
Further, spin coating photoresist, its thickness is at least 0.1um, as shown in Figure 4;
Further, photoresist exposes and develops, and stays glue at photodiode area, and it stays glue size to be less than or equal to photodiode size, as shown in Figure 5;
Further, heating and melting photoresist, melts photoresist for spherical or near-spherical, the temperature of its heating is 200 degrees Celsius～300 degrees Celsius, is then cooled to room temperature, makes photoresist sclerosis, as shown in Figure 6, wherein, the plan position approach on the peak top of 601 mark photoresists;
Further, dry method ion etching, the photoresist of photodiode area keeps being etched gradually with spherical or near-spherical, and first the photoresist of bulbous rim is etched, and is then the thicker photoresist that approaches ball top, is finally the photoresist on ball top; After photoresist is etched, can continue etching semiconductor matrix, transistor device region does not have photoresist, the etching mode of meeting keeping parallelism, as shown in Figure 7; Wherein 701 marks is the position that the semiconductor substrate in transistor device region is etched, 702 marks be the position that photoresist top is etched; Visible, photoresist top is etched into 702 positions from 601 positions, and the semiconductor in transistor device region etches into 701 positions from 301 positions.
Finally, photoresist is by complete etching, and photodiode area technique is made complete, as shown in Figure 8; Wherein, 801 marks be the final semiconductor-based body position of transistor device, 802 marks be the semiconductor-based body position of photodiode area peak, visible, photodiode area is etched into 802 positions of semiconductor substrate from 601 positions, top of photoresist, transistor device region is etched into 801 positions from 301 initial positions; And 801 and 802 difference in height is at least 0.1um, 802 position is lower than 301.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (7)
1. an image sensor pixel, comprises photodiode area, transistor device region, it is characterized in that, the surface of described photodiode area is higher than the surface in described transistor device region.
2. image sensor pixel according to claim 1, is characterized in that, described photodiode area raises up with ball-shape or globoid type shape.
3. image sensor pixel according to claim 2, is characterized in that, the peak of described photodiode area projection at least exceeds 0.1um than the surface in described transistor device region.
4. image sensor pixel according to claim 3, is characterized in that, described photodiode area does not arrange metal interconnecting wires, and described metal interconnecting wires is only arranged on transistor device region.
5. image sensor pixel according to claim 4, is characterized in that, described transistor device region comprises charge pass transistor.
6. image sensor pixel according to claim 5, is characterized in that, described image sensor pixel is for CMOS type imageing sensor or for CCD type imageing sensor.
7. a manufacture method for the image sensor pixel described in claim 1 to 6 any one, is characterized in that, the technique of described photodiode comprises step before being produced on the technique of described transistor device:
A, provide semiconductor substrate;
B, spin coating photoresist, its thickness is at least 0.1um;
C, photoresist expose and develop, and stay glue at photodiode area, and it stays glue size to be less than or equal to photodiode size;
D, heating and melting photoresist, melt photoresist for spherical or near-spherical, and the temperature of its heating is 200 degrees Celsius～300 degrees Celsius, is then cooled to room temperature;
E, dry method ion etching, photodiode area photoresist keeps being etched gradually with spherical or near-spherical, and first the photoresist of bulbous rim is etched, and is then the thicker photoresist that approaches ball top, is finally the photoresist on ball top; After photoresist is etched, can continue to keep the mode etching semiconductor matrix with spherical or near-spherical, the final photodiode area that forms spherical or near-spherical, transistor device region keeps k level position in etching process, and the peak of photodiode area at least exceeds 0.1um than transistor device region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410449173.1A CN104201183A (en) | 2014-09-04 | 2014-09-04 | Image sensor pixel and production method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410449173.1A CN104201183A (en) | 2014-09-04 | 2014-09-04 | Image sensor pixel and production method thereof |
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| CN104201183A true CN104201183A (en) | 2014-12-10 |
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| CN201410449173.1A Pending CN104201183A (en) | 2014-09-04 | 2014-09-04 | Image sensor pixel and production method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3550607A1 (en) * | 2018-04-02 | 2019-10-09 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1517723A (en) * | 2003-01-27 | 2004-08-04 | ���ǵ�����ʽ���� | Method for manufacturing microlens array |
| US6781211B2 (en) * | 2002-02-18 | 2004-08-24 | Samsung Electronics Co., Ltd. | Photodiode having an active region shaped in a convex lens |
| KR100790210B1 (en) * | 2001-06-30 | 2008-01-02 | 매그나칩 반도체 유한회사 | Image sensor and fabricating method of thesame |
| CN102194838A (en) * | 2010-02-05 | 2011-09-21 | 三星电子株式会社 | Backside illumination CMOS image sensors and methods of manufacturing the same |
| CN204088319U (en) * | 2014-09-04 | 2015-01-07 | 北京思比科微电子技术股份有限公司 | A kind of image sensor pixel |
-
2014
- 2014-09-04 CN CN201410449173.1A patent/CN104201183A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790210B1 (en) * | 2001-06-30 | 2008-01-02 | 매그나칩 반도체 유한회사 | Image sensor and fabricating method of thesame |
| US6781211B2 (en) * | 2002-02-18 | 2004-08-24 | Samsung Electronics Co., Ltd. | Photodiode having an active region shaped in a convex lens |
| CN1517723A (en) * | 2003-01-27 | 2004-08-04 | ���ǵ�����ʽ���� | Method for manufacturing microlens array |
| CN102194838A (en) * | 2010-02-05 | 2011-09-21 | 三星电子株式会社 | Backside illumination CMOS image sensors and methods of manufacturing the same |
| CN204088319U (en) * | 2014-09-04 | 2015-01-07 | 北京思比科微电子技术股份有限公司 | A kind of image sensor pixel |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3550607A1 (en) * | 2018-04-02 | 2019-10-09 | Samsung Electronics Co., Ltd. | Image sensor and method of manufacturing the same |
| US10665637B2 (en) | 2018-04-02 | 2020-05-26 | Samsung Electronics Co., Ltd. | Complementary metal oxide semiconductor image sensor and method of manufacturing the same |
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Application publication date: 20141210 |