CN104200778B - Image element circuit and its driving method, display floater, display device - Google Patents
Image element circuit and its driving method, display floater, display device Download PDFInfo
- Publication number
- CN104200778B CN104200778B CN201410499248.7A CN201410499248A CN104200778B CN 104200778 B CN104200778 B CN 104200778B CN 201410499248 A CN201410499248 A CN 201410499248A CN 104200778 B CN104200778 B CN 104200778B
- Authority
- CN
- China
- Prior art keywords
- transistor
- driving
- electric capacity
- electrode
- nodal point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of image element circuit and its driving method, display floater, display device, wherein, image element circuit includes：The first transistor, transistor seconds, third transistor, the 4th transistor, driving transistor, the first electric capacity, the second electric capacity and light-emitting component, driven by the cooperation between each transistor and two electric capacity, the cross-pressure at the final threshold voltage for causing driving current and driving transistor itself and light-emitting component two ends is irrelevant, eliminate the impact of undesirable element, the problem of display device non-uniform light is further effectively improved, display device uniformity of luminance and display effect is improve.
Description
Technical field
The present invention relates to organic light emitting display technical field, in particular, more particularly to a kind of image element circuit and its drive
Dynamic method, display floater, display device.
Background technology
With multimedia continuous development, Organic Light Emitting Diode (Organic Light Emitting Diode,
OLED) display is subject in monitor market with the advantage such as simple structure and splendid operating temperature, contrast, visual angle
Attract attention.Organic light emitting diode display includes passive matrix OLED displays and active-matrix OLED display, and active square
Battle array OLED display is widely used due to low in energy consumption.In actually used, it is found that organic light emitting diode display is present luminous
Uneven phenomenon.
The content of the invention
In view of this, the present invention is provided a kind of image element circuit and its driving method, display floater, display device, lead to
Overcompensation drives the threshold voltage of the transistor of Organic Light Emitting Diode, eliminates the impact of threshold voltage, and then eliminates display
The phenomenon of part non-uniform light.
The technical scheme that the present invention is provided is as follows：
A kind of image element circuit, including：The first transistor, transistor seconds, third transistor, the 4th transistor, driving are brilliant
Body pipe, the first electric capacity, the second electric capacity and light-emitting component；Wherein,
The driving transistor is used for the size for determining driving current, and the size of the driving current is by the driving crystal
The grid of pipe and source voltage are determined；
The first transistor is controlled by the first drive signal, for transmitting the leakage of power supply signal to the driving transistor
Pole；
The transistor seconds is controlled by the second drive signal, for the driving current from the driving transistor is passed
Transport to the light-emitting component；
The third transistor is controlled by the 3rd drive signal, for transmitting the power supply signal to the driving transistor
Grid and the first electric capacity the second pole plate；
4th transistor by fourth drive signal control, for transmission data signal to the second of first electric capacity
Pole plate；
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to
First pole plate of the source electrode of the driving transistor and the first electric capacity；
The negative electrode of the light-emitting component is connected to negative electrode electronegative potential, and lights in response to the driving current.
Preferably, the grid of the first transistor is connected to first drive signal, and the of the first transistor
One electrode is connected to the power supply signal, and the second electrode of the first transistor is connected to the 3rd node；
The grid of the transistor seconds is connected to second drive signal, and the first electrode of the transistor seconds connects
Secondary nodal point is connected to, the second electrode of the transistor seconds is connected to the anode of the light-emitting component, the light-emitting component
Negative electrode is connected to the negative electrode electronegative potential；
The grid of the third transistor is connected to the 3rd drive signal, and the first electrode of the third transistor connects
The 3rd node is connected to, the second electrode of the third transistor is connected to primary nodal point；
The grid of the 4th transistor is connected to the fourth drive signal, and the first electrode of the 4th transistor connects
The data signal is connected to, the second electrode of the 4th transistor is connected to the primary nodal point；
The grid of the driving transistor is connected to the primary nodal point, and the drain electrode of the driving transistor is connected to described
3rd node, the source electrode of the driving transistor are connected to the secondary nodal point；
First pole plate of first electric capacity is connected to the primary nodal point, and the second pole plate of first electric capacity is connected to
The secondary nodal point；And,
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to
The secondary nodal point.
Preferably, the driving transistor is N-type transistor.
Preferably, the first transistor, transistor seconds, third transistor and the 4th transistor are N-type transistor；
Or,
The first transistor, transistor seconds, third transistor and the 4th transistor are P-type transistor.
Preferably, the first transistor, transistor seconds, third transistor, the 4th transistor and the driving crystal
Pipe is thin film transistor (TFT) or metal-oxide semiconductor fieldeffect transistor.
Preferably, the light-emitting component is Organic Light Emitting Diode.
Accordingly, present invention also offers a kind of driving method, for driving above-mentioned image element circuit, the driving method
Including threshold value crawl step, data write step and light emitting step, wherein,
In the threshold value crawl step, grid and the drain electrode of the power supply signal to the driving transistor are transmitted；
In the data write step, the first pole plate of the data signal to first electric capacity is transmitted, by described
First Capacitance Coupled so that the source electrode of data signal transmission to the driving transistor；
In the light emitting step, the driving transistor produces driving current, to drive the light-emitting component to light.
Preferably, the grid of the first transistor is connected to first drive signal, and the of the first transistor
One electrode is connected to the power supply signal, and the second electrode of the first transistor is connected to the 3rd node；
The grid of the transistor seconds is connected to second drive signal, and the first electrode of the transistor seconds connects
Secondary nodal point is connected to, the second electrode of the transistor seconds is connected to the anode of the light-emitting component, the light-emitting component
Negative electrode is connected to the negative electrode electronegative potential；
The grid of the third transistor is connected to the 3rd drive signal, and the first electrode of the third transistor connects
The 3rd node is connected to, the second electrode of the third transistor is connected to primary nodal point；
The grid of the 4th transistor is connected to the fourth drive signal, and the first electrode of the 4th transistor connects
The data signal is connected to, the second electrode of the 4th transistor is connected to the primary nodal point；
The grid of the driving transistor is connected to the primary nodal point, and the drain electrode of the driving transistor is connected to described
3rd node, the source electrode of the driving transistor are connected to the secondary nodal point；
First pole plate of first electric capacity is connected to the primary nodal point, and the second pole plate of first electric capacity is connected to
The secondary nodal point；And,
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to
The secondary nodal point；Wherein, the driving method includes：
In the threshold value crawl step, the first transistor and third transistor conducting are driven, driven described second brilliant
Body pipe and the 4th transistor cutoff, the primary nodal point and the 3rd node voltage are the power supply electricity that the power supply signal is provided
Pressure, the driving transistor conducting, until the secondary nodal point voltage is that the supply voltage deducts the driving transistor
End during threshold voltage, make first electric capacity and the second electric capacity be stored with the threshold voltage；
In the data write step, the first transistor and third transistor cut-off are driven, while driving described the
Four transistor turns, and keep the transistor seconds cut-off state, the primary nodal point voltage to provide for the data signal
Data voltage, by first electric capacity coupled to the secondary nodal point；
In the light emitting step, the 4th transistor cutoff is driven, while driving the first transistor and second brilliant
Body pipe is turned on, and keeps the third transistor cut-off state, after first electric capacity is maintained at the data write step
The voltage difference of the grid and source electrode of the driving transistor, determines the driving current, to drive the light-emitting component to light.
Accordingly, present invention also offers a kind of display floater, including above-mentioned image element circuit.
Accordingly, present invention also offers a kind of display device, including above-mentioned display floater.
One of relative to prior art, the technical scheme that the present invention is provided at least has the following advantages that：
Image element circuit and its driving method, display floater, display device that the present invention is provided, wherein, image element circuit includes：
The first transistor, transistor seconds, third transistor, the 4th transistor, driving transistor, the first electric capacity, the second electric capacity and send out
Optical element, is driven by the cooperation between each transistor and two electric capacity, finally causes driving current and driving transistor sheet
The threshold voltage of body and the cross-pressure at light-emitting component two ends are irrelevant, eliminate the impact of undesirable element, and then effectively improve
The problem of display device non-uniform light, improves display device uniformity of luminance and display effect.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can be with basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation of existing image element circuit；
A kind of structural representation of image element circuit that Fig. 2 is provided for the embodiment of the present application；
A kind of drive signal sequential chart that Fig. 3 is provided for the embodiment of the present application；
Fig. 4 a are the current path figure in T1 stages in Fig. 3；
Fig. 4 b are the current path figure in T2 stages in Fig. 3；
Fig. 4 c are the current path figure in T3 stages in Fig. 3.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
It was discovered by researchers that in actually used, it is found that organic light emitting diode display has the phenomenon of non-uniform light.
With reference to shown in Fig. 1, it is a kind of circuit diagram of existing image element circuit in organic light emitting diode display, existing image element circuit
2T1C structures are adopted mostly, i.e., including two transistors and an electric capacity.Wherein, transistor M20 is used as current drive transistor,
Illuminating electric current is provided for Organic Light Emitting Diode OLED.Turned on by signal controlling transistor M10 that scan line Sn is provided, and
The data voltage provided by the data wire Dm being connected with transistor M10, data voltage is stored in electric capacity C, to control crystalline substance
The magnitude of current of body pipe M20.
Research worker also finds, in real work, due to the impact of manufacturing process, in each image element circuit for driving
The threshold voltage of the transistor of organic light-emitting diode is different, therefore can cause to apply same data to multiple image element circuits
During voltage, the electric current for flowing through Organic Light Emitting Diode in the plurality of image element circuit is variant, and then display display picture occurs
The uneven phenomenon of brightness (lighting).
Based on this, the embodiment of the present application provides a kind of image element circuit, with reference to shown in Fig. 2, provides for the embodiment of the present application
A kind of image element circuit structural representation, wherein, image element circuit includes：
The first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4, driving transistor M0, first
Electric capacity C1, the second electric capacity C2 and light-emitting component D, light-emitting component D are Organic Light Emitting Diode；Wherein,
Driving transistor M0 is used to determining the size of driving current, the grid of the size of driving current by driving transistor M0
Determine with source voltage；
The first transistor M1 is controlled by the first drive signal S1, for transmitting power supply signal Pvdd to driving transistor M0
Drain electrode；
Transistor seconds M2 is controlled by the second drive signal S2, for the driving current transmission of self-driven transistor M0 in the future
To light-emitting component D；
Third transistor M3 is controlled by the 3rd drive signal S3, for transmitting power supply signal Pvdd to driving transistor M0
Second pole plate of grid and the first electric capacity C1；
4th transistor M4 is controlled by fourth drive signal S4, for the of the electric capacity C1 of transmission data signal Data to first
Two pole plates；
First pole plate of the second electric capacity C2 is connected to power supply signal Pvdd, and second pole plate of the second electric capacity C2 is connected to driving
First pole plate of the source electrode of transistor M0 and the first electric capacity C1；
The negative electrode of light-emitting component D is connected to negative electrode electronegative potential Pvee, and lights in response to driving current.
More specifically, with reference to shown in Fig. 2, in image element circuit, the grid of the first transistor M1 is connected to the first driving
The first electrode of signal S1, the first transistor M1 is connected to power supply signal Pvdd, and the second electrode of the first transistor M1 is connected to
3rd node N3；
The grid of transistor seconds M2 is connected to the second drive signal S2, and the first electrode of transistor seconds M2 is connected to
Two node N2, the second electrode of transistor seconds M2 are connected to the anode of light-emitting component D, and the negative electrode of light-emitting component D is connected to the moon
Very Low Potential Pvee；
The grid of third transistor M3 is connected to the 3rd drive signal S3, and the first electrode of third transistor M3 is connected to
Three node N3, the second electrode of third transistor M3 are connected to primary nodal point N1；
The grid of the 4th transistor M4 is connected to fourth drive signal S4, and the first electrode of the 4th transistor M4 is connected to number
It is believed that number Data, the second electrode of the 4th transistor M4 is connected to primary nodal point N1；
The grid of driving transistor M0 is connected to primary nodal point N1, and the drain electrode of driving transistor M0 is connected to the 3rd node
N3, the source electrode of driving transistor M0 are connected to secondary nodal point N2；
First pole plate of the first electric capacity C1 is connected to primary nodal point N1, and second pole plate of the first electric capacity C1 is connected to second section
Point N2；And,
First pole plate of the second electric capacity C2 is connected to power supply signal Pvdd, and second pole plates of C2 of the second electric capacity are connected to second
Node N2.
In the image element circuit that embodiment corresponding to above-mentioned Fig. 2 is provided, driving transistor M0 is N-type transistor.In addition, right
In the type of the first transistor M1, transistor seconds M2, third transistor M3 and the 4th transistor M4, wherein any one transistor
Can be N-type transistor or P-type transistor, specific design is carried out according to practical application to this needs, the embodiment of the present application is not made
Concrete restriction.But make image element circuit during, the type of its transistor is identical so that processing technology more it is simple with
Make efficiency is higher, therefore, it is more highly preferred to, the first transistor M1, transistor seconds M2, third transistor M3 and the 4th crystal
Pipe M4 is N-type transistor；Or,
The first transistor M1, transistor seconds M2, third transistor M3 and the 4th transistor M4 are P-type transistor.Separately
Outward, for the embodiment of the present application provide image element circuit, the first transistor M1, transistor seconds M2, third transistor M3, the 4th
Transistor M4 and driving transistor M0 are thin film transistor (TFT) or metal-oxide semiconductor fieldeffect transistor.
Based on the above-mentioned image element circuit that the application is provided, present invention also provides a kind of driving method, above-mentioned for driving
The image element circuit that embodiment is provided, with reference to the structure of the image element circuit provided in Fig. 2, wherein, the drive that the embodiment of the present application is provided
Dynamic method includes：Threshold value crawl step, data write step and light emitting step, wherein,
In threshold value crawl step, grid and the drain electrode of power supply signal Pvdd to driving transistor M0 are transmitted；
In data write step, first pole plate of the electric capacity C1 of transmission data signal Data to first, by the first electric capacity C1
Coupling so that data signal Data is transmitted to the source electrode of driving transistor M0；
In light emitting step, driving transistor M0 produces driving current, luminous with driven for emitting lights element D.
Specifically, based on the structure of the image element circuit shown in Fig. 2, with reference to shown in Fig. 3～Fig. 4 c, the application is implemented
The driving method that example is provided makes a more detailed description, wherein, during a kind of drive signal that Fig. 3 is provided for the embodiment of the present application
Sequence figure；Fig. 4 a are the current path figure in T1 stages in Fig. 3；Fig. 4 b are the current path figure in T2 stages in Fig. 3；During Fig. 4 c are Fig. 3
The current path figure in T3 stages.Wherein, the threshold value crawl step in T1 stages correspondence driving method, T2 stages correspondence driving method
In data write step, and, the T3 stages correspondence driving method in light emitting step.It is further to note that the application
Embodiment provide driving method in, the transistor of its image element circuit is illustrated with N-type transistor, i.e., driving transistor,
The first transistor, transistor seconds, third transistor and the 4th transistor are N-type transistor.
As shown in Figure 2, the embodiment of the present application is provided
The grid of the first transistor M1 is connected to the first drive signal S1, and the first electrode of the first transistor M1 is connected to electricity
The second electrode of source signal Pvdd, the first transistor M1 is connected to the 3rd node N3；
The grid of transistor seconds M2 is connected to the second drive signal S2, and the first electrode of transistor seconds M2 is connected to
Two node N2, the second electrode of transistor seconds M2 are connected to the anode of light-emitting component D, and the negative electrode of light-emitting component D is connected to the moon
Very Low Potential Pvee；
The grid of third transistor M3 is connected to the 3rd drive signal S3, and the first electrode of third transistor M3 is connected to
Three node N3, the second electrode of third transistor M3 are connected to primary nodal point N1；
The grid of the 4th transistor M4 is connected to fourth drive signal S4, and the first electrode of the 4th transistor M4 is connected to number
It is believed that number Data, the second electrode of the 4th transistor M4 is connected to primary nodal point N1；
The grid of driving transistor M0 is connected to primary nodal point N1, and the drain electrode of driving transistor M0 is connected to the 3rd node
N3, the source electrode of driving transistor M0 are connected to secondary nodal point N2；
First pole plate of the first electric capacity C1 is connected to primary nodal point N1, and second pole plate of the first electric capacity C1 is connected to second section
Point N2；And,
First pole plate of the second electric capacity C2 is connected to power supply signal Pvdd, and second pole plates of C2 of the second electric capacity are connected to second
Node N2；Wherein, driving method includes：
In threshold value crawl step T1, the first transistor M1 and the conducting of third transistor M3 are driven, transistor seconds M2 is driven
End with the 4th transistor M4, primary nodal point N1 and the 3rd node N3 voltages are the supply voltage that power supply signal Pvdd is provided,
Driving transistor M0 is turned on, until secondary nodal point N2 voltages are cut when the threshold voltage of driving transistor M0 is deducted for supply voltage
Only, the first electric capacity C1 and the second electric capacity C2 is made to be stored with threshold voltage；
Specifically, with reference to shown in Fig. 3 and Fig. 4 a, in threshold value crawl step T1, the first drive signal S1 is high level, is driven
The first transistor M1 is turned on, and power supply signal Pvdd transmitted to the 3rd node N3, makes voltage (the i.e. driving transistor of the 3rd node N3
The drain voltage of M0) the supply voltage Vpvdd that provides for power supply signal Pvdd；Second drive signal S2 is low level, drives the
Two-transistor M2 ends；3rd drive signal S3 is high level, drives the conducting of third transistor M3, and power supply signal Pvdd is by the 3rd
Node N3 is transmitted to primary nodal point N1 so that the voltage (i.e. the grid voltage of driving transistor M0) of primary nodal point N1 is power supply electricity
Pressure Vpvdd；And, fourth drive signal S4 is low level, drives the 4th transistor M4 cut-offs.
In threshold value crawl step T1, as the grid voltage and drain voltage of driving transistor M0 are supply voltage
Vpvdd so that driving transistor M0 is turned on, until the voltage (i.e. the source voltage of driving transistor M0) of secondary nodal point N2 is electricity
When source voltage Vpvdd deducts the threshold voltage vt h of driving transistor M0, driving transistor M0 cut-off, now, the first electric capacity C1 and
Second electric capacity C2 is stored with the threshold voltage vt h of driving transistor M0.
In data write step T2, the first transistor M1 and the cut-off of third transistor M3 are driven, while driving the 4th crystal
Pipe M4 is turned on, and keeps transistor seconds M2 cut-off states, the data electricity that primary nodal point N1 voltages are provided for data signal Data
Pressure, by the first electric capacity C1 coupled to secondary nodal point N2；
Specifically, with reference to shown in Fig. 3 and Fig. 4 b, in data write step T2, the first drive signal S1 is changed into low level, drives
Dynamic the first transistor M1 cut-offs；Second drive signal S2 keeps level, keeps the cut-off state of transistor seconds M2；3rd drives
Signal S3 is changed into low level, drives the cut-off of third transistor M3；And, fourth drive signal S4 is changed into high level, drives the 4th
Transistor M4 is turned on, and data signal Data transmitted to primary nodal point N1 so that the voltage of primary nodal point N1 (i.e. driving transistor M0
Grid voltage) become as the data voltage Vdata that provided by data signal Data.
Now, by the coupling of the first electric capacity C1, the data voltage Vdata of primary nodal point N1 is coupled to into secondary nodal point
N2 so that the voltage (i.e. the source voltage of driving transistor M0) of secondary nodal point N2 become in order to：Vpvdd-Vth+(Vdata-
Vpvdd) (C1/ (C1+C2)), i.e. the first electric capacity C1 storage voltage become in order to：Vdata-Vpvdd+Vth-(Vdata-Vpvdd)
(C1/(C1+C2))。
In light emitting step T3, the 4th transistor M4 cut-offs are driven, while driving the first transistor M1 and transistor seconds M2
Conducting, and keep third transistor M3 cut-off state, the first electric capacity C1 to be maintained at driving transistor M0 after data write step
Grid and source electrode voltage difference, determine driving current, it is luminous with driven for emitting lights element D.
Specifically, with reference to shown in Fig. 3 and Fig. 4 c, in light emitting step T3, the first drive signal S1 and the second drive signal S2
It is changed into high level, drives the first transistor M1 conductings and transistor seconds M2 to turn on respectively；And the 3rd drive signal S3 and
Four drive signal S4 are level, drive third transistor M3 and the 4th transistor M4 cut-offs respectively.
Now, in light emitting step T3, the voltage (i.e. the source voltage of driving transistor M0) of secondary nodal point N2 is low for negative electrode
Negative electrode low-voltage Vpvee and the cross-pressure Vd sums at the two ends of light-emitting component D that current potential Pvee is provided；And the first electric capacity C1 is now protected
Hold the storage voltage in data write step T2 so that the voltage (i.e. the grid voltage of driving transistor M0) of primary nodal point N1
For：Vdata-Vpvdd+Vth- (Vdata-Vpvdd) (C1/ (C1+C2))+Vpvee+Vd, thus, the grid source of driving transistor M0
Voltage Vgs is primary nodal point N1 voltages and secondary nodal point N2 difference in voltage：
Vgs=Vdata-Vpvdd+Vth- (Vdata-Vpvdd) (C1/ (C1+C2))+Vpvee+Vd-Vpvee-Vd
=Vdata-Vpvdd+Vth- (Vdata-Vpvdd) (C1/ (C1+C2)) formula one
Because in light emitting step T3, driving transistor M0 is operated in saturation region, thus be accordingly used in what driven for emitting lights element D lighted
Driving current Id determined by the voltage difference of the grid and source electrode of driving transistor M0, therefore, driving current Id is:
Id=k (Vgs-Vth)2
=k [Vdata-Vpvdd+Vth- (Vdata-Vpvdd) (C1/ (C1+C2))-Vth]2
=k [(Vdata-Vpvdd) (C2/ (C1+C2))]2Formula two
In formula two, Id is expressed as the luminous electricity of the driving current of driving transistor M0 generation, i.e. driven for emitting lights element
Stream；K is constant；Vgs is the voltage difference between the grid and source electrode of driving transistor M0；Threshold values of the Vth for driving transistor M0
Voltage；The data voltage that Vdata is provided for data signal Data.
So far, by transistor seconds M2, by with the threshold voltage vt h and light-emitting component D two ends of driving transistor M0
Cross-pressure Vd unrelated driving current Id is transmitted to light-emitting component D, luminous with driven for emitting lights element D so that display device is sent out
Light is uniform, improves display effect.
As shown in the above, driven in the cooperation of different phase by each transistor and two electric capacity, it is final to cause
The threshold voltage of driving current and driving transistor itself and the cross-pressure at light-emitting component two ends are irrelevant, eliminate undesirable element
Impact, and then effectively improve the problem of display device non-uniform light, improve display device uniformity of luminance and aobvious
Show effect.
Additionally, the embodiment of the present application additionally provides a kind of display floater, including image element circuit, wherein, image element circuit is adopted
Image element circuit described in above-mentioned any one embodiment.
It should be noted that the display floater that the application is provided is not specifically limited for the quantity of image element circuit, can be with
It is designed according to practical application.
Finally, the embodiment of the present application additionally provides a kind of display device, including display floater, wherein, display floater is adopted
Display floater described in any of the above-described kind of embodiment.
The embodiment of the present application provides a kind of image element circuit and its driving method, display floater, display device, wherein, as
Plain circuit includes：The first transistor, transistor seconds, third transistor, the 4th transistor, driving transistor, the first electric capacity,
Two electric capacity and light-emitting component, are driven by the cooperation between each transistor and two electric capacity, are finally caused driving current and are driven
The threshold voltage of dynamic transistor itself and the cross-pressure at light-emitting component two ends are irrelevant, eliminate the impact of undesirable element, and then
The problem of display device non-uniform light is effectively improved, display device uniformity of luminance and display effect is improve.
Claims (10)
1. a kind of image element circuit, it is characterised in that include：The first transistor, transistor seconds, third transistor, the 4th crystal
Pipe, driving transistor, the first electric capacity, the second electric capacity and light-emitting component；Wherein,
The driving transistor is used for the size for determining driving current, and the size of the driving current is by the driving transistor
Grid and source voltage are determined；
The first transistor is controlled by the first drive signal, for transmitting the drain electrode of power supply signal to the driving transistor；
The transistor seconds is controlled by the second drive signal, for by the driving current from the driving transistor transmit to
The light-emitting component；
The third transistor is controlled by the 3rd drive signal, for transmitting the grid of the power supply signal to the driving transistor
Pole and the second pole plate of the first electric capacity；
4th transistor by fourth drive signal control, for the second pole of transmission data signal to first electric capacity
Plate；
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to described
First pole plate of the source electrode of driving transistor and the first electric capacity；
The negative electrode of the light-emitting component is connected to negative electrode electronegative potential, and lights in response to the driving current；
Wherein, the driving method of the image element circuit includes threshold value crawl step, data write step and light emitting step, wherein,
In the threshold value crawl step, grid and the drain electrode of the power supply signal to the driving transistor are transmitted；
In the data write step, the first pole plate of the data signal to first electric capacity is transmitted, by described first
Capacitance Coupled so that the source electrode of data signal transmission to the driving transistor；
In the light emitting step, the driving transistor produces driving current, to drive the light-emitting component to light.
2. image element circuit according to claim 1, it is characterised in that the grid of the first transistor is connected to described
One drive signal, the first electrode of the first transistor are connected to the power supply signal, and the second of the first transistor is electric
Pole is connected to the 3rd node；
The grid of the transistor seconds is connected to second drive signal, and the first electrode of the transistor seconds is connected to
Secondary nodal point, the second electrode of the transistor seconds are connected to the anode of the light-emitting component, the negative electrode of the light-emitting component
It is connected to the negative electrode electronegative potential；
The grid of the third transistor is connected to the 3rd drive signal, and the first electrode of the third transistor is connected to
3rd node, the second electrode of the third transistor are connected to primary nodal point；
The grid of the 4th transistor is connected to the fourth drive signal, and the first electrode of the 4th transistor is connected to
The data signal, the second electrode of the 4th transistor are connected to the primary nodal point；
The grid of the driving transistor is connected to the primary nodal point, and the drain electrode of the driving transistor is connected to the described 3rd
Node, the source electrode of the driving transistor are connected to the secondary nodal point；
First pole plate of first electric capacity is connected to the primary nodal point, and the second pole plate of first electric capacity is connected to described
Secondary nodal point；And,
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to described
Secondary nodal point.
3. image element circuit according to claim 1, it is characterised in that the driving transistor is N-type transistor.
4. image element circuit according to claim 3, it is characterised in that the first transistor, transistor seconds, trimorphism
Body pipe and the 4th transistor are N-type transistor；Or,
The first transistor, transistor seconds, third transistor and the 4th transistor are P-type transistor.
5. image element circuit according to claim 1, it is characterised in that the first transistor, transistor seconds, trimorphism
Body pipe, the 4th transistor and the driving transistor are thin film transistor (TFT) or Metal-oxide-semicondutor field effect transistor
Pipe.
6. image element circuit according to claim 1, it is characterised in that the light-emitting component is Organic Light Emitting Diode.
7. a kind of driving method of image element circuit, it is characterised in that for driving the picture described in claim 1～6 any one
Plain circuit, the driving method include threshold value crawl step, data write step and light emitting step, wherein,
In the threshold value crawl step, grid and the drain electrode of the power supply signal to the driving transistor are transmitted；
In the data write step, the first pole plate of the data signal to first electric capacity is transmitted, by described first
Capacitance Coupled so that the source electrode of data signal transmission to the driving transistor；
In the light emitting step, the driving transistor produces driving current, to drive the light-emitting component to light.
8. driving method according to claim 7, it is characterised in that
The grid of the first transistor is connected to first drive signal, and the first electrode of the first transistor is connected to
The power supply signal, the second electrode of the first transistor are connected to the 3rd node；
The grid of the transistor seconds is connected to second drive signal, and the first electrode of the transistor seconds is connected to
Secondary nodal point, the second electrode of the transistor seconds are connected to the anode of the light-emitting component, the negative electrode of the light-emitting component
It is connected to the negative electrode electronegative potential；
The grid of the third transistor is connected to the 3rd drive signal, and the first electrode of the third transistor is connected to
3rd node, the second electrode of the third transistor are connected to primary nodal point；
The grid of the 4th transistor is connected to the fourth drive signal, and the first electrode of the 4th transistor is connected to
The data signal, the second electrode of the 4th transistor are connected to the primary nodal point；
The grid of the driving transistor is connected to the primary nodal point, and the drain electrode of the driving transistor is connected to the described 3rd
Node, the source electrode of the driving transistor are connected to the secondary nodal point；
First pole plate of first electric capacity is connected to the primary nodal point, and the second pole plate of first electric capacity is connected to described
Secondary nodal point；And,
First pole plate of second electric capacity is connected to the power supply signal, and the second pole plate of second electric capacity is connected to described
Secondary nodal point；Wherein, the driving method includes：
In the threshold value crawl step, the first transistor and third transistor conducting are driven, the transistor seconds is driven
With the 4th transistor cutoff, the primary nodal point and the 3rd node voltage are the supply voltage that the power supply signal is provided, institute
Driving transistor conducting is stated, is the threshold value electricity that the supply voltage deducts the driving transistor up to the secondary nodal point voltage
End during pressure, make first electric capacity and the second electric capacity be stored with the threshold voltage；
In the data write step, the first transistor and third transistor cut-off are driven, while driving the described 4th brilliant
Body pipe is turned on, and keeps the transistor seconds cut-off state, the number that the primary nodal point voltage is provided for the data signal
According to voltage, the data voltage is coupled to the secondary nodal point by first electric capacity；
In the light emitting step, the 4th transistor cutoff is driven, while driving the first transistor and transistor seconds
Conducting, and keep the third transistor cut-off state, first electric capacity are maintained at described after the data write step
The voltage difference of the grid and source electrode of driving transistor, determines the driving current, to drive the light-emitting component to light.
9. a kind of display floater, it is characterised in that including the image element circuit described in claim 1～6 any one.
10. a kind of display device, it is characterised in that including the display floater described in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410499248.7A CN104200778B (en) | 2014-09-25 | 2014-09-25 | Image element circuit and its driving method, display floater, display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410499248.7A CN104200778B (en) | 2014-09-25 | 2014-09-25 | Image element circuit and its driving method, display floater, display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104200778A CN104200778A (en) | 2014-12-10 |
| CN104200778B true CN104200778B (en) | 2017-03-29 |
Family
ID=52086061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410499248.7A Active CN104200778B (en) | 2014-09-25 | 2014-09-25 | Image element circuit and its driving method, display floater, display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104200778B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922483A (en) * | 2018-07-13 | 2018-11-30 | 京东方科技集团股份有限公司 | Pixel circuit, array substrate, display panel and electronic equipment |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104700781B (en) * | 2015-04-01 | 2017-05-24 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN105632404B (en) * | 2016-03-11 | 2019-07-12 | 上海天马有机发光显示技术有限公司 | A kind of organic light emitting display circuit and its driving method |
| CN105825813B (en) * | 2016-05-25 | 2018-12-11 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display panel and display device |
| CN105810151B (en) * | 2016-05-31 | 2018-08-07 | 上海天马微电子有限公司 | A kind of pixel-driving circuit, driving method, display panel and display device |
| CN106023895B (en) * | 2016-08-10 | 2018-11-16 | 上海天马有机发光显示技术有限公司 | Organic light emissive pixels driving circuit, driving method and organic light emitting display panel |
| CN106205494B (en) * | 2016-09-09 | 2019-05-31 | 深圳市华星光电技术有限公司 | AMOLED pixel-driving circuit and image element driving method |
| CN106847182A (en) * | 2016-12-28 | 2017-06-13 | 深圳市华星光电技术有限公司 | Pixel-driving circuit and organic light-emitting display device |
| CN111243493B (en) * | 2018-11-29 | 2022-07-08 | 成都辰显光电有限公司 | Pixel circuit, display device and driving method of pixel circuit |
| JP2022534548A (en) | 2019-03-29 | 2022-08-02 | 京東方科技集團股▲ふん▼有限公司 | Pixel compensation circuit, display panel, driving method, and display device |
| CN110444161A (en) * | 2019-06-28 | 2019-11-12 | 福建华佳彩有限公司 | A kind of internal compensation circuit |
| CN110189698B (en) * | 2019-06-28 | 2021-04-13 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
| CN110969985A (en) * | 2019-12-13 | 2020-04-07 | 福建华佳彩有限公司 | Pixel circuit driving method and pixel circuit |
| CN113053304A (en) * | 2019-12-26 | 2021-06-29 | 天马日本株式会社 | Pixel circuit for controlling light emitting element |
| CN111312187A (en) * | 2020-03-05 | 2020-06-19 | 深圳市华星光电半导体显示技术有限公司 | Pixel driving circuit, driving method thereof and liquid crystal display panel |
| US11062671B1 (en) | 2020-03-05 | 2021-07-13 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel driving circuit, driving method thereof and liquid crystal display panel |
| CN114203109B (en) * | 2021-12-20 | 2022-12-13 | 长沙惠科光电有限公司 | Pixel driving circuit, compensation method thereof and display panel |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7872620B2 (en) * | 2005-04-29 | 2011-01-18 | Seoul National University Industry Foundation | Pixel structure using voltage programming-type for active matrix organic light emitting device |
| CN102708790A (en) * | 2011-12-01 | 2012-10-03 | 京东方科技集团股份有限公司 | Pixel unit driving circuit and method, pixel unit and display device |
| CN102708819B (en) * | 2012-05-10 | 2014-08-13 | 北京京东方光电科技有限公司 | Pixel drive circuit and drive method, array substrate and display unit thereof |
| CN103035202A (en) * | 2012-12-25 | 2013-04-10 | 友达光电股份有限公司 | Pixel compensating circuit |
| CN103474022A (en) * | 2013-08-22 | 2013-12-25 | 京东方科技集团股份有限公司 | Pixel circuit, pixel circuit driving method, array baseplate and display device |
-
2014
- 2014-09-25 CN CN201410499248.7A patent/CN104200778B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108922483A (en) * | 2018-07-13 | 2018-11-30 | 京东方科技集团股份有限公司 | Pixel circuit, array substrate, display panel and electronic equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104200778A (en) | 2014-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104200778B (en) | Image element circuit and its driving method, display floater, display device | |
| CN104200777B (en) | Image element circuit and its driving method, display floater, display device | |
| CN104200779B (en) | Image element circuit and driving method, display floater, display device | |
| CN104200771B (en) | Image element circuit, array base palte and display device | |
| CN104409042B (en) | Image element circuit and its driving method, display panel, display device | |
| CN104465715B (en) | Image element circuit, driving method, display panel and display device | |
| CN103050080B (en) | The image element circuit of organic light emitting display and driving method thereof | |
| CN103198794B (en) | Image element circuit and driving method, organic electroluminescence display panel and display device | |
| CN103123773B (en) | AMOLED pixel-driving circuit | |
| CN106448557B (en) | Light emission drive circuit and organic light emitting display | |
| CN102651198B (en) | AMOLED (Active Matrix/Organic Light Emitting Diode) driving circuit, method and AMOLED display | |
| CN104036725B (en) | Image element circuit and its driving method, organic electroluminescence display panel and display device | |
| CN104700780B (en) | A kind of driving method of image element circuit | |
| CN105913802B (en) | A kind of organic electroluminescent LED display panel and its driving method | |
| CN104809989A (en) | Pixel circuit, drive method thereof and related device | |
| CN104715726A (en) | Pixel driving circuit, pixel driving method and display device | |
| CN106935201B (en) | Pixel circuit and its driving method and active matrix/organic light emitting display | |
| CN104217682A (en) | Pixel circuit, organic electroluminescent display panel and display device | |
| CN107749279B (en) | OLED drive and AMOLED display panel | |
| CN105789250A (en) | Pixel circuit and driving method therefor, and organic light emitting display | |
| CN104751789A (en) | Organic Light Emitting Diode Display Device And Method Driving The Same | |
| CN104464625B (en) | Image element circuit and driving method, array base palte, display device | |
| CN207474026U (en) | A kind of pixel circuit and display device | |
| WO2015051682A1 (en) | Pixel circuit and driving method thereof, and thin film transistor backplane | |
| CN105761664A (en) | Pixel circuit, driving method therefor, and active matrix organic light-emitting display |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220317 Address after: No.8, liufangyuan Henglu, Donghu New Technology Development Zone, Wuhan City, Hubei Province Patentee after: WUHAN TIANMA MICRO-ELECTRONICS Co.,Ltd. Patentee after: Wuhan Tianma Microelectronics Co.,Ltd. Shanghai Branch Patentee after: Tianma Micro-Electronics Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Patentee before: SHANGHAI TIANMA AM-OLED Co.,Ltd. Patentee before: Tianma Microelectronics Co., Ltd |