CN105789250A - Pixel circuit and driving method therefor, and organic light emitting display - Google Patents
Pixel circuit and driving method therefor, and organic light emitting display Download PDFInfo
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Abstract
The invention provides a pixel circuit and a driving method therefor, and an organic light emitting display. The positive electrode of an organic light emitting diode is initialized by the pixel circuit through a first thin film transistor and a second thin film transistor; the gate electrode and the drain electrode of a sixth thin film transistor, taken as the driving element, are initialized through the first thin film transistor and a third thin film transistor; meanwhile, the overshoot current generated in the initializing process is eliminated through a seventh thin film transistor, so that the service life of the organic light emitting diode and the sixth thin film transistor is prolonged; and in addition, the current output by the sixth thin film transistor which is taken as the driving element is unrelated to the threshold value voltage of the sixth thin film transistor and the impedance of the power supply routing wires, so that uneven luminance caused by the threshold value voltage deviation of the thin film transistor and the difference of the impedance of the power supply routing wires can be avoided, and the display quality of the organic light emitting display is further improved.
Description
Technical field
The present invention relates to technical field of flat panel display, particularly to a kind of image element circuit and driving method thereof and OLED.
Background technology
OLED (English full name OrganicLightingEmittingDisplay, it is called for short OLED) can self-luminescence, unlike Thin Film Transistor-LCD (English full name ThinFilmTransistorliquidcrystaldisplay, it is called for short TFT-LCD) need back light system (backlightsystem) just can light, therefore visibility and brightness are all higher, and more frivolous.At present, OLED is described as the display of new generation that can replace Thin Film Transistor-LCD.
Refer to Fig. 1, it is the circuit diagram of pixel of OLED of prior art.nullAs shown in Figure 1，Each pixel of OLED includes image element circuit 10 and Organic Light Emitting Diode OLED，Described image element circuit 10 is connected with data wire Dm and scanning line Sn，And control the luminescence of described Organic Light Emitting Diode OLED，Wherein，Described image element circuit 10 includes switching thin-film transistor M1、Drive transistor M2 and storage electric capacity Cst，The grid of described switching thin-film transistor M1 is connected with scanning line Sn，The source electrode of described switching thin-film transistor M1 is connected with data wire Dm，The grid of described driving transistor M2 is connected with the drain electrode of described switching thin-film transistor M1，The source electrode of described driving transistor M2 is connected with the first power supply ELVDD by the first power supply cabling (not shown)，The drain electrode of described driving transistor M2 is connected with the anode of described Organic Light Emitting Diode OLED，The negative electrode of described Organic Light Emitting Diode OLED is connected with second source ELVSS by second source cabling (not shown)，Electric current that described Organic Light Emitting Diode OLED provides according to described image element circuit 10 and luminous，Described storage electric capacity Cst is connected between grid and the source electrode of described driving transistor M2，For maintaining the data voltage of the grid providing described switching thin-film transistor M1 and the threshold voltage of described driving transistor M2 during the scheduled time.
But, the deviation meeting of manufacturing process and cause that difference occurs in the threshold voltage of thin film transistor (TFT).And as driving the thin film transistor (TFT) of element, the deviation of its threshold voltage can cause that described Organic Light Emitting Diode OLED still launches the light of different brightness for the data signal of same brightness, causes brightness disproportionation, affects display effect.
And, there is certain impedance in the power supply cabling owing to connecting described first power supply ELVDD and image element circuit 10, when a current flows through, power supply cabling can affect the power supply malleation VDD being actually reached described image element circuit 10, cause that the power supply malleation VDD that each image element circuit 10 receives is inconsistent, and then increase the weight of brightness disproportionation phenomenon.If driving transistor M2 thoroughly to be turned on, produce overshoot current, it will shorten the service life of described driving transistor M2 and Organic Light Emitting Diode OLED.
Summary of the invention
It is an object of the invention to provide a kind of image element circuit and driving method thereof and OLED, with the problem solving existing OLED brightness disproportionation.
For solving the problems referred to above, the present invention provides a kind of image element circuit, and described image element circuit includes:
The first film transistor, is connected between the 3rd node and the 3rd power supply, and its grid is connected to three scan line；
Second thin film transistor (TFT), is connected between the 3rd node and the anode of Organic Light Emitting Diode, and its grid is connected to scan line；
3rd thin film transistor (TFT), is connected between secondary nodal point and the 3rd node, and its grid is connected to the second scanning line；
4th thin film transistor (TFT), is connected between data wire and primary nodal point；
5th thin film transistor (TFT), is connected between primary nodal point and the 3rd power supply, and its grid is connected to scan line；
6th thin film transistor (TFT), is connected between drain electrode and the 3rd node of the 7th thin film transistor (TFT), and its grid is connected to secondary nodal point；
7th thin film transistor (TFT), is connected between the source electrode of the first power supply and the 6th thin film transistor (TFT)；
First electric capacity, is connected between primary nodal point and secondary nodal point, is used for storing signal.
Optionally, in described image element circuit, also including the second electric capacity, described second electric capacity is connected between secondary nodal point and the second scanning line, and the scanning signal provided for responding described second scanning line boosts with the voltage to described secondary nodal point place.
Optionally, in described image element circuit, described first power supply and second source are used as the driving power supply of described Organic Light Emitting Diode, and described 3rd power supply is for providing initialize level for the grid of described 6th thin film transistor (TFT), the drain electrode of described 6th thin film transistor (TFT) and the anode of described Organic Light Emitting Diode.
Optionally, in described image element circuit, the scan period of described image element circuit is driven to include first stage to the 5th stage；
The anode of described Organic Light Emitting Diode initializes between the described first stage to phase III, the grid of described 6th thin film transistor (TFT) and drain electrode initialize in described second stage, and the threshold voltage of described 6th thin film transistor (TFT) is sampled in described fourth stage；The grid voltage of described 6th thin film transistor (TFT) was boosted by described second electric capacity in the 5th stage.
Optionally, in described image element circuit, described 7th thin film transistor (TFT) is constantly in cut-off state in the described first stage.
Optionally, in described image element circuit, data voltage and the initialization voltage of described 3rd power supply offer that the electric current that described 6th thin film transistor (TFT) provides to described Organic Light Emitting Diode is provided by described data wire determine, and unrelated with the threshold voltage of the supply voltage that described first power supply and second source provide and described 6th thin film transistor (TFT).
Accordingly, present invention also offers the driving method of a kind of image element circuit, the driving method of described image element circuit includes:
Scan period is divided into first stage, second stage, phase III, fourth stage and the 5th stage, wherein,
In the first stage, the scanning signal that scan line provides keeps low level, the scanning signal that second scanning line and the 4th scanning line provide keeps high level, the scanning signal that three scan line provides is become low level from high level, the scanning signal that 5th scanning line provides is become high level by low level, described the first film transistor is become conducting from cut-off, described 7th thin film transistor (TFT) is become cut-off from conducting, by described the first film transistor and the second thin film transistor (TFT), the anode of described Organic Light Emitting Diode is initialized；
In second stage, the scanning signal that scan line and three scan line provide keeps low level, the scanning signal that 4th scanning line and the 5th scanning line provide keeps high level, the scanning signal that second scanning line provides is become low level from high level, described 3rd thin film transistor (TFT) is become conducting from cut-off, by described the first film transistor and the 3rd thin film transistor (TFT), grid and the drain electrode of described 6th thin film transistor (TFT) is initialized；
In the phase III, the scanning signal that second scanning line and three scan line provide keeps low level, the scanning signal that 5th scanning line provides keeps high level, the scanning signal that scan line provides is become high level from low level, the scanning signal that 4th scanning line provides is become low level from high level, described second thin film transistor (TFT) and the 5th thin film transistor (TFT) become cut-off by conducting, described 4th thin film transistor (TFT) conducting, stops the initialization to described Organic Light Emitting Diode anode the one end by data voltage transmission to the first electric capacity；
In fourth stage, the scanning signal that scan line provides keeps high level, the scanning signal that second scanning line and the 4th scanning line provide keeps low level, the scanning signal that three scan line provides is become high level from low level, the scanning signal that 5th scanning line provides is become low level from high level, described the first film transistor is become cut-off from conducting, described 7th thin film transistor (TFT) is become conducting by cut-off, stops the initialization to described 6th thin film transistor (TFT) and starts the threshold voltage of described 6th thin film transistor (TFT) is sampled；
In the 5th stage, the scanning signal that the second scanning line provides is become high level from low level, and the 3rd thin film transistor (TFT) is become cut-off from conducting, and now described secondary nodal point is boosted by described second electric capacity；After 3rd thin film transistor (TFT) cut-off, the scanning signal that scan line provides is become low level from high level, the scanning signal that 4th scanning line provides simultaneously is become high level from low level, described second thin film transistor (TFT) and the 5th thin film transistor (TFT) become conducting by cut-off, described 4th thin film transistor (TFT) is become cut-off from conducting, described 6th thin film transistor (TFT) conducting, output electric current is to drive described organic light-emitting diode.
Optionally, in the driving method of described image element circuit, in the described first stage, described 7th thin film transistor (TFT) is remained cut-off state.
Optionally, in the driving method of described image element circuit, when described the first film transistor and the second thin film transistor (TFT) turn on jointly, described 3rd power supply the anode of described Organic Light Emitting Diode is initialized；
When described the first film transistor and the 3rd thin film transistor (TFT) turn on jointly, described 3rd power supply grid and the drain electrode of described 6th thin film transistor (TFT) are initialized.
Accordingly, present invention also offers a kind of OLED, described OLED includes image element circuit as above.
nullIn image element circuit provided by the invention and driving method and OLED thereof，The anode of described Organic Light Emitting Diode is initialized by described image element circuit by described the first film transistor and the second thin film transistor (TFT)，By described the first film transistor and the 3rd thin film transistor (TFT), grid and the drain electrode of the 6th thin film transistor (TFT) as driving element are initialized，Eliminate the overshoot current in initialization procedure by described 7th thin film transistor (TFT) simultaneously，Thereby increase described Organic Light Emitting Diode and the service life of the 6th thin film transistor (TFT)，And，As driving, the electric current that exports of the 6th thin film transistor (TFT) of element and the threshold voltage of the 6th thin film transistor (TFT) and the impedance of power supply cabling are unrelated，Therefore, it is possible to avoid by the threshold voltage deviation of thin film transistor (TFT) caused brightness disproportionation different from the impedance of power supply cabling，And then improve the display quality of OLED.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the pixel of the OLED of prior art；
Fig. 2 is the circuit diagram of the image element circuit of the embodiment of the present invention one；
Fig. 3 is the sequential chart of the driving method of the image element circuit of the embodiment of the present invention one；
Fig. 4 is the circuit diagram of the image element circuit of the embodiment of the present invention two；
Fig. 5 is the sequential chart of the driving method of the image element circuit of the embodiment of the present invention two；
Fig. 6 is the circuit diagram of the image element circuit of the embodiment of the present invention three；
Fig. 7 is the sequential chart of the driving method of the image element circuit of the embodiment of the present invention three.
Detailed description of the invention
A kind of image element circuit present invention proposed below in conjunction with the drawings and specific embodiments and driving method and OLED thereof are described in further detail.According to the following describes and claims, advantages and features of the invention will be apparent from.It should be noted that, accompanying drawing all adopts the form simplified very much and all uses non-ratio accurately, only in order to convenience, the purpose aiding in illustrating the embodiment of the present invention lucidly.
[embodiment one]
Refer to Fig. 2, it is the structural representation of image element circuit of the embodiment of the present invention one.As in figure 2 it is shown, described image element circuit 20 includes: the first film transistor M1, being connected between the 3rd node N3 and the three power supply VREF, its grid is connected to three scan line S3；Second thin film transistor (TFT) M2, is connected between the 3rd node N3 and the anode of Organic Light Emitting Diode, and its grid is connected to scan line S1；3rd thin film transistor (TFT) M3, is connected between secondary nodal point N2 and the three node N3, and its grid is connected to the second scanning line S2；4th thin film transistor (TFT) M4, is connected between data wire DATA and primary nodal point N1；5th thin film transistor (TFT) M5, is connected between primary nodal point N1 and the three power supply VREF, and its grid is connected to scan line S1；6th thin film transistor (TFT) M6, is connected between drain electrode and the 3rd node N3 of the 7th thin film transistor (TFT) M7, and its grid is connected to secondary nodal point N2；7th thin film transistor (TFT) M7, is connected between the source electrode of the first power supply ELVDD and the six thin film transistor (TFT) M6；First electric capacity C1, is connected between primary nodal point N1 and secondary nodal point N2, is used for storing signal.
Concrete, described image element circuit 20, by power supply cabling and external power source, connects including the first power supply ELVDD, second source ELVSS and the three power supply VREF.Wherein, described first power supply ELVDD and second source ELVSS is used as the driving power supply of Organic Light Emitting Diode OLED, and described 3rd power supply VREF is used for providing initialization voltage.The first supply voltage that described first power supply ELVDD provides is generally high level, and the second source voltage that described second source ELVSS provides is generally low-voltage, and the initialization voltage that described 3rd power supply VREF provides is generally negative pressure or the low-voltage close to 0V.
nullAs shown in Figure 2，The anode of described Organic Light Emitting Diode OLED is connected with described image element circuit 20，The negative electrode of described Organic Light Emitting Diode OLED is connected to described second source ELVSS by second source cabling (not shown)，In described image element circuit 20，The source electrode of described 7th thin film transistor (TFT) M7 is connected to described first power supply ELVDD by the first power supply cabling (not shown)，The source electrode of described 6th thin film transistor (TFT) M6 is connected with the drain electrode of described 7th thin film transistor (TFT) M7，The grid of described 6th thin film transistor (TFT) M6 and the source electrode of the 3rd thin film transistor (TFT) M3 connect，The drain electrode of described 6th thin film transistor (TFT) M6、The drain electrode of the 3rd thin film transistor (TFT) M3、The source electrode of the first film transistor M1 and the source electrode of the second thin film transistor (TFT) M2 are connected to the 3rd node N3，The drain electrode of described second thin film transistor (TFT) M2 is connected with the anode of described Organic Light Emitting Diode OLED.
Wherein, described 6th thin film transistor (TFT) M6 as drive transistor be described Organic Light Emitting Diode OLED provide electric current, described Organic Light Emitting Diode OLED response current and luminous.
nullPlease continue to refer to Fig. 2，The drain electrode of described the first film transistor M1 and the drain electrode of described 5th thin film transistor (TFT) M5 are all connected with described 3rd power supply VREF，The drain electrode of described 4th thin film transistor (TFT) M4、The source electrode of the 5th thin film transistor (TFT) M5 and one end of the first electric capacity C1 are connected to primary nodal point N1，The other end of described first electric capacity C1、The other end of the second electric capacity C2 and the source electrode of the 3rd thin film transistor (TFT) M3 are connected to secondary nodal point N2，The grid of described second thin film transistor (TFT) M2 and the five thin film transistor (TFT) M5 is all connected with scan line S1，Described 5th thin film transistor (TFT) M5 is in response to the described scan line S1 scanning signal provided，Described primary nodal point N1 will be supplied to from the 3rd power supply VREF reference voltage provided，The grid of described the first film transistor M1 and three scan line S3 connect，Described the first film transistor M1 is in response to the described three scan line S3 scanning signal provided，Described 3rd node N3 will be supplied to from the 3rd power supply VREF reference voltage provided，One end of described second electric capacity C2 is all scanned line S2 with second with the grid of the 3rd thin film transistor (TFT) M3 and is connected，Described 3rd thin film transistor (TFT) M3 scans the line S2 scanning signal provided in response to described second，Described secondary nodal point N2 will be supplied to from the 3rd power supply VREF initialization voltage provided.
As shown in Figure 2, when described 5th thin film transistor (TFT) M5 conducting, described initialization voltage Vref is applied to primary nodal point N1, when described the first film transistor M1 turns on, described initialization voltage Vref is applied to the 3rd node N3, and when described the first film transistor M1 and the three thin film transistor (TFT) M3 simultaneously turns on, described initialization voltage Vref is applied to secondary nodal point N2 and the three node N3.
Please continue to refer to Fig. 2, the grid of described 4th thin film transistor (TFT) M4 and the 4th scanning line S4 connect, the source electrode of described 4th thin film transistor (TFT) M4 is connected with data wire DATA, the data voltage Vdata of driving chip (not shown) output is transmitted by described data wire DATA, the drain electrode of described 4th thin film transistor (TFT) M4 is connected with one end of described first electric capacity C1 and the source electrode of described 5th thin film transistor (TFT) M5 respectively, described 4th thin film transistor (TFT) M4 scans the line S4 scanning signal provided in response to the described 4th, described primary nodal point N1 will be supplied to via the data wire DATA data voltage Vdata transmitted.
Described image element circuit 20 also includes the second electric capacity C2, described second electric capacity C2 and is connected between secondary nodal point N2 and the second scanning line S2, is used for scanning the line S2 scanning signal provided in response to described second, the voltage at described secondary nodal point N2 place is boosted.As shown in Figure 2, one end of described first electric capacity C1 is connected with the drain electrode of described 4th thin film transistor (TFT) M4 and the source electrode of the 5th thin film transistor (TFT) M5, the other end of described first electric capacity C1 is connected with one end of the described grid of the 6th thin film transistor (TFT) M6, the source electrode of the 3rd thin film transistor (TFT) M3 and the second electric capacity C2, and the other end of described second electric capacity C2 is connected to the second scanning line S2.
Wherein, described first electric capacity C1, as storage electric capacity, is used for storing signal.When the potential difference of described secondary nodal point N2 and described primary nodal point N1 is charged to described first electric capacity C1, described first electric capacity C1 thus keeps voltage signal.Described second electric capacity C2, as boost capacitor, scans the line S2 scanning signal provided in response to described second and the voltage at described secondary nodal point N2 place is boosted.When the described second scanning signal scanning line S2 offer jumps to high level from low level, the voltage of saltus step will increase to the grid of the 6th thin film transistor (TFT) M6, the grid voltage Vg6 making described 6th thin film transistor (TFT) M6 raises, thus reducing the leakage current of described 6th thin film transistor (TFT) M6, and then raising displays contrast.
In the present embodiment, described image element circuit 20 is a kind of 7T2C type circuit structure, and including 7 thin film transistor (TFT)s and 2 electric capacity, described 7 thin film transistor (TFT)s are P-type TFT (TFT).Described image element circuit 20 scans line with 5 respectively and is connected.Wherein, the grid of described scan line S1 and described second thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5 is connected, and is used for controlling initialize and stablize electric capacity.The grid of described second scanning line S2 and described 3rd thin film transistor (TFT) M3 is connected, for controlling to drive the sampling of the threshold voltage of transistor.The grid of described three scan line S3 and described the first film transistor M1 is connected, for controlling the initialization of described Organic Light Emitting Diode OLED anode.The grid of described 4th scanning line S4 and described 4th thin film transistor (TFT) M4 is connected, for controlling the write of data voltage Vdata.The grid of described 5th scanning line S5 and described 7th thin film transistor (TFT) M7 is connected, for controlling to drive the overshoot current of transistor in initialized process.
Compared with the image element circuit of the 7T1C structure not having the second electric capacity C2, have the second electric capacity C2 7T2C structure image element circuit in the voltage of secondary nodal point N2 can be increased, the leakage current driving transistor is less, and the contrast therefore shown is higher.
Accordingly, present invention also offers the driving method of a kind of image element circuit.Incorporated by reference to referring to figs. 2 and 3, the driving method of described image element circuit includes:
Scan period is divided into first stage T1, second stage T2, phase III T3, fourth stage T4 and the five stage T5, wherein,
At first stage T1, the scanning signal that scan line S1 provides keeps low level, second scanning line S2 and the four is scanned the line S4 scanning signal provided and keeps high level, the scanning signal that three scan line S3 provides is become low level from high level, the scanning signal that 5th scanning line S5 provides is become high level by low level, described the first film transistor M1 is become conducting from cut-off, described 7th thin film transistor (TFT) M7 is become cut-off from conducting, by described the first film transistor M1 and the second thin film transistor (TFT) M2, the anode of described Organic Light Emitting Diode OLED is initialized；
At second stage T2, the scanning signal that scan line S1 and three scan line S3 provides keeps low level, 4th scanning line S4 and the five is scanned the line S5 scanning signal provided and keeps high level, the scanning signal that second scanning line S2 provides is become low level from high level, described 3rd thin film transistor (TFT) M3 is become conducting from cut-off, by described the first film transistor M1 and the three thin film transistor (TFT) M3, grid and the drain electrode of described 6th thin film transistor (TFT) M6 is initialized；
At phase III T3, the scanning signal that second scanning line S2 and three scan line S3 provides keeps low level, the scanning signal that 5th scanning line S5 provides keeps high level, the scanning signal that scan line S1 provides is become high level from low level, the scanning signal that 4th scanning line S4 provides is become low level from high level, described second thin film transistor (TFT) M2 and the five thin film transistor (TFT) M5 becomes cut-off by conducting, described 4th thin film transistor (TFT) M4 conducting, stop the initialization to described Organic Light Emitting Diode OLED anode the one end by data voltage Vdata transmission to the first electric capacity C1；
At fourth stage T4, the scanning signal that scan line S1 provides keeps high level, second scanning line S2 and the four is scanned the line S4 scanning signal provided and keeps low level, the scanning signal that three scan line S3 provides is become high level from low level, the scanning signal that 5th scanning line S5 provides is become low level from high level, described the first film transistor M1 is become cut-off from conducting, described 7th thin film transistor (TFT) M7 is become conducting by cut-off, stops the initialization to described 6th thin film transistor (TFT) M6 and starts the threshold voltage of described 6th thin film transistor (TFT) M6 is sampled；
At the 5th stage T5, the scanning signal that the second scanning line S2 provides is become high level from low level, and described 3rd thin film transistor (TFT) M3 is become cut-off from conducting, by described second electric capacity C2, described secondary nodal point N2 is boosted；After described 3rd thin film transistor (TFT) M3 cut-off, the scanning signal that scan line S1 provides is become low level from high level, the scanning signal that 4th scanning line S4 provides simultaneously is become high level from low level, described second thin film transistor (TFT) M2 and the five thin film transistor (TFT) M5 becomes conducting by cut-off, described 4th thin film transistor (TFT) M4 is become cut-off from conducting, described 6th thin film transistor (TFT) M6 conducting, output electric current is to drive described Organic Light Emitting Diode OLED luminous.
Concrete, at first stage T1, owing to the three scan line S3 scanning signal provided is become low level from high level, described the first film transistor M1 is become conducting from cut-off, owing to the 5th scanning signal scanning line S5 offer is become high level by low level, described 7th thin film transistor (TFT) M7 is become cut-off from conducting, the initialization voltage Vref that now described 3rd power supply VREF provides is applied to the anode of described Organic Light Emitting Diode OLED via described the first film transistor M1 and the second thin film transistor (TFT) M2, thus the anode of described Organic Light Emitting Diode OLED is initialized, it is set to low level by the anode voltage of described Organic Light Emitting Diode OLED.
In the process, by described 3rd power supply VREF, the anode of described Organic Light Emitting Diode OLED is initialized, thus adding the service life of described Organic Light Emitting Diode OLED, and, owing to described 7th thin film transistor (TFT) M7 is constantly in cut-off state, the electric current that first power supply ELVDD produces cannot pass through described 7th thin film transistor (TFT) M7, thus eliminating overshoot current.
At second stage T2, owing to the second scanning signal scanning line S2 offer is become low level from high level, described 3rd thin film transistor (TFT) M3 is become conducting from cut-off, the initialization voltage Vref that now the 3rd power supply VREF provides is applied separately to grid and the drain electrode of described 6th thin film transistor (TFT) M6 via described the first film transistor M1 and the three thin film transistor (TFT) M3, thus grid and drain electrode to described 6th thin film transistor (TFT) M6 initialize.
In the process, being initialized by the described 3rd power supply VREF grid to the 6th thin film transistor (TFT) M6 as driving element and drain electrode, thus adding the service life driving transistor, being also that the sampling of threshold voltage is prepared simultaneously.
At phase III T3, owing to the scan line S1 scanning signal provided is become high level from low level, described second thin film transistor (TFT) M2 and the five thin film transistor (TFT) M5 becomes cut-off by conducting, stop the initialization to described Organic Light Emitting Diode OLED anode, owing to the 4th scanning signal scanning line S4 offer is become low level from high level, described 4th thin film transistor (TFT) M4 conducting, data wire DATA is by one end of data voltage Vdata transmission to the first electric capacity C1.
nullAt fourth stage T4，Owing to the three scan line S3 scanning signal provided is become high level from low level，Described the first film transistor M1 is become cut-off from conducting，Stop the initialization to described 6th thin film transistor (TFT) M6，Owing to the 5th scanning signal scanning line S5 offer is become low level from high level，Described 7th thin film transistor (TFT) M7 is become conducting by cut-off，The source electrode of the first supply voltage VDD transmission extremely described 6th thin film transistor (TFT) M6 that the first power supply ELVDD provides，Described secondary nodal point N2 is via described 6th thin film transistor (TFT) M6 and described 7th thin film transistor (TFT) M7，The potential difference of the threshold voltage of described first power supply ELVDD the first supply voltage VDD provided and described 6th thin film transistor (TFT) M6 is sampled，And the potential difference VDD-Vth of the first supply voltage VDD and threshold voltage is provided to secondary nodal point N2.Wherein, Vth is the absolute value of the threshold voltage of described 6th thin film transistor (TFT) M6.
In the process, first electric capacity C1 can be charged by data voltage Vdata, until secondary nodal point N2 is namely described reaches VDD-Vth as the grid voltage Vg6 of the 6th thin film transistor (TFT) M6, the first electric capacity C1 stops charging, thus completing the sampling of threshold voltage to the 6th thin film transistor (TFT) M6.
At the 5th stage T5, owing to the described second scanning signal scanning line S2 offer jumps to high level at the 5th stage T5 from low level, now described second electric capacity C2 scans the line S2 scanning variable quantity of signal provided and described secondary nodal point N2 being boosted in conjunction with ratio { Cb/ (Cb+Cst) } of described first electric capacity C1 and the second electric capacity C2 according to described second, the voltage of described secondary nodal point N2 and the grid voltage Vg6 of described 6th thin film transistor (TFT) M6 are raised, thus decreasing the leakage current of the 6th thin film transistor (TFT) M6, and then improve and display contrast.On the other hand, owing to the scan line S1 scanning signal provided is become low level from high level, the scanning signal that 4th scanning line S4 provides is become high level from low level, therefore described second thin film transistor (TFT) M2 and the five thin film transistor (TFT) M5 becomes conducting by cut-off, described 4th thin film transistor (TFT) M4 is become cut-off from conducting simultaneously, and now the voltage of described primary nodal point N1 is become initialization voltage Vref from data voltage Vdata.Owing to the voltage of described first electric capacity C1 will not suddenly change, so the grid voltage Vg6 of the 6th thin film transistor (TFT) M6 will follow the change in voltage of described primary nodal point N1 and change.
From the foregoing, the voltage variety of described primary nodal point N1 is Vdata-Vref.Therefore, the grid voltage Vg6 of described 6th thin film transistor (TFT) M6 is calculated by below equation:
Vg6=VDD-Vth-(Vdata-Vref) formula 1；
Wherein, Vth is the absolute value of the threshold voltage of described 6th thin film transistor (TFT) M6, VDD is described first power supply ELVDD the first supply voltage provided, and Vdata is the described data wire DATA data voltage provided, the initialization voltage that Vref provides for described 3rd power supply.
Owing to the source voltage of now described 6th thin film transistor (TFT) M6 is equal to described first power supply ELVDD the first supply voltage VDD provided, therefore the gate source voltage Vsg6 of described 6th thin film transistor (TFT) M6, namely the voltage difference between grid and the source electrode of described 6th thin film transistor (TFT) M6 can be calculated by below equation:
Vsg6=VDD-(VDD-Vth-(Vdata-Vref)) formula 2；
Can be obtained by formula 1 and formula 2:
Vsg6-Vth=Vdata-Vref formula 3；
In the process, described 6th thin film transistor (TFT) M6 turns on and exports electric current, drives described Organic Light Emitting Diode OLED luminous, and described Organic Light Emitting Diode OLED sends and the light of the current in proportion provided.The computing formula of the electric current Ion flowing through described Organic Light Emitting Diode OLED is:
Ion=K × (Vsg6-Vth)2Formula 4；
Wherein, K is the electron mobility of thin film transistor (TFT), breadth length ratio, unit-area capacitance three is amasss.
Can be obtained by formula 3 and formula 4:
Ion=K × (Vdata-Vref))2
Based on the expression formula of above-mentioned formula it can be seen that flow through the electric current of the described Organic Light Emitting Diode OLED threshold voltage with described supply voltage and the 6th thin film transistor (TFT) M6 all without relation, only relevant with data voltage Vdata, initialization voltage Vref and constant K.Even if the threshold voltage of the 6th thin film transistor (TFT) M6 exists deviation, power supply cabling impedance influences is actually reached the supply voltage of image element circuit and impacts without to the electric current Ion flowing through described Organic Light Emitting Diode OLED.Therefore, described image element circuit 20 and driving method thereof is adopted can to avoid the brightness disproportionation phenomenon walked line impedence and cause because of threshold voltage deviation and power supply completely.Meanwhile, eliminate overshoot current, add described Organic Light Emitting Diode OLED and the service life as the 6th thin film transistor (TFT) M6 driving element.
[embodiment two]
Refer to Fig. 4, it is the structural representation of image element circuit of the embodiment of the present invention two.As shown in Figure 4, described image element circuit 30 includes: the first film transistor M1, is connected between the 3rd node N3 and the three power supply VREF, and its grid is connected to three scan line S3；Second thin film transistor (TFT) M2, is connected between the 3rd node N3 and the anode of Organic Light Emitting Diode, and its grid is connected to scan line S1；3rd thin film transistor (TFT) M3, is connected between secondary nodal point N2 and the three node N3, and its grid is connected to the second scanning line S2；4th thin film transistor (TFT) M4, is connected between data wire DATA and primary nodal point N1；5th thin film transistor (TFT) M5, is connected between primary nodal point N1 and the three power supply VREF, and its grid is connected to scan line S1；6th thin film transistor (TFT) M6, is connected between drain electrode and the 3rd node N3 of the 7th thin film transistor (TFT) M7, and its grid is connected to secondary nodal point N2；7th thin film transistor (TFT) M7, is connected between the source electrode of the first power supply ELVDD and the six thin film transistor (TFT) M6；First electric capacity C1, is connected between primary nodal point N1 and secondary nodal point N2, is used for storing signal.
Concrete, described image element circuit 30 comprises all features of image element circuit 20 described in embodiment one, and the present embodiment and embodiment one are distinctive in that, described image element circuit 30 only scans line with 4 and is connected.Wherein, the grid of described 4th thin film transistor (TFT) M4 is not scan line S4 with the 4th to be connected, but scans line S2 with second and be connected, and described second scanning line S2 is being used for controlling the write being simultaneously used for controlling data voltage Vdata of threshold voltage sampling；The grid of described 7th thin film transistor (TFT) M7 is not scan line S5 with the 5th to be connected, but scans line S4 with the 4th and be connected, and described 4th scanning line S4 for controlling to drive the overshoot current of transistor in initialized process.
Incorporated by reference to reference Fig. 3 and Fig. 5, scan line S1 in the present embodiment, the timing requirements of the scanning signal that the second scanning line S2 and three scan line S3 provides and the scan line S1 in embodiment one, the timing requirements of the scanning signal that the second scanning line S2 and three scan line S3 provides is identical, this is no longer going to repeat them, particular content refers to first stage T1 to the 5th stage T5 of the driving method of image element circuit in embodiment one, the timing requirements of the scanning signal that the 4th scanning line S4 of the present embodiment provides is identical with the timing requirements of the scanning signal that the 5th scanning line S5 in embodiment one provides.
In the present embodiment, described 4th thin film transistor (TFT) M4 and described 3rd thin film transistor (TFT) M3 shares the second scanning line S2, and each row pixel has only to 4 scanning lines, thus be accordingly used in and provides the scanning line of scanning signal to reduce.The image element circuit 30 of the present embodiment is applicable to high-resolution product.
[embodiment three]
Refer to Fig. 6, it is the structural representation of image element circuit of the embodiment of the present invention three.As shown in Figure 6, described image element circuit 40 includes: the first film transistor M1, is connected between the 3rd node N3 and the three power supply VREF, and its grid is connected to three scan line S3；Second thin film transistor (TFT) M2, is connected between the 3rd node N3 and the anode of Organic Light Emitting Diode, and its grid is connected to scan line S1；3rd thin film transistor (TFT) M3, is connected between secondary nodal point N2 and the three node N3, and its grid is connected to the second scanning line S2；4th thin film transistor (TFT) M4, is connected between data wire DATA and primary nodal point N1；5th thin film transistor (TFT) M5, is connected between primary nodal point N1 and the three power supply VREF, and its grid is connected to scan line S1；6th thin film transistor (TFT) M6, is connected between drain electrode and the 3rd node N3 of the 7th thin film transistor (TFT) M7, and its grid is connected to secondary nodal point N2；7th thin film transistor (TFT) M7, is connected between the source electrode of the first power supply ELVDD and the six thin film transistor (TFT) M6；First electric capacity C1, is connected between primary nodal point N1 and secondary nodal point N2, is used for storing signal.
Concrete, described image element circuit 40 comprises all features of image element circuit 20 described in embodiment one, the present embodiment and embodiment one are distinctive in that, described 4th thin film transistor (TFT) M4 and described 7th thin film transistor (TFT) M7 is N-type TFT (TFT), and described image element circuit 40 only scans line with 3 and is connected.Wherein, the grid of described 4th thin film transistor (TFT) M4 is not scan line S4 with the 4th to be connected, but is connected with scan line S1, and described scan line S1 is for controlling the initialized write being simultaneously used for controlling data voltage Vdata；The grid of described 7th thin film transistor (TFT) M7 is not scan line S5 with the 5th to be connected, but be connected with three scan line S3, described three scan line S3 is being used for controlling the initialized overshoot current being simultaneously used for controlling to drive transistor in initialized process of described Organic Light Emitting Diode OLED anode.
Incorporated by reference to reference Fig. 3 and Fig. 7, the timing requirements of the scanning signal that the scan line S1 in the present embodiment, the second scanning line S2 and three scan line S3 provide is identical with the timing requirements of the scanning signal that the scan line S1 in embodiment one, the second scanning line S2 and three scan line S3 provide, this is no longer going to repeat them, and particular content refers to first stage T1 to the 5th stage T5 of the driving method of image element circuit in embodiment one.
In the present embodiment, described 4th thin film transistor (TFT) M4 and described 7th thin film transistor (TFT) M7 is N-type TFT (TFT), therefore described 4th thin film transistor (TFT) M4 can share scan line S1 with described second thin film transistor (TFT) M2 and the 5th thin film transistor (TFT) M5, each row pixel has only to 3 scanning lines, is consequently for providing the scanning line of scanning signal to be greatly reduced.Therefore the image element circuit 40 of the present embodiment is applicable to the product of higher resolution.
It should be noted that each embodiment adopts the mode gone forward one by one to describe in this specification, what each embodiment stressed is the difference with other embodiments, between each embodiment identical similar portion mutually referring to.For image element circuit disclosed in embodiment, due to embodiment disclosed in the driving method of image element circuit corresponding, so what describe is fairly simple, relevant part illustrates referring to method part.
Accordingly, present invention also offers a kind of OLED, described OLED includes image element circuit as above.Specifically refer to above, repeat no more herein.
nullTo sum up，In image element circuit provided by the invention and driving method and OLED thereof，The anode of described Organic Light Emitting Diode is initialized by described image element circuit by described the first film transistor and the second thin film transistor (TFT)，By described the first film transistor and the 3rd thin film transistor (TFT), grid and the drain electrode of the 6th thin film transistor (TFT) as driving element are initialized，Eliminate the overshoot current in initialization procedure by described 7th thin film transistor (TFT) simultaneously，Thereby increase described Organic Light Emitting Diode and the service life of the 6th thin film transistor (TFT)，And，As driving, the electric current that exports of the 6th thin film transistor (TFT) of element and the threshold voltage of the 6th thin film transistor (TFT) and the impedance of power supply cabling are unrelated，Therefore, it is possible to avoid by the threshold voltage deviation of thin film transistor (TFT) caused brightness disproportionation different from the impedance of power supply cabling，And then improve the display quality of display.
Foregoing description is only the description to present pre-ferred embodiments, not any restriction to the scope of the invention, any change that the those of ordinary skill in field of the present invention does according to the disclosure above content, modification, belongs to the protection domain of claims.
Claims (10)
1. an image element circuit, it is characterised in that including:
The first film transistor, is connected between the 3rd node and the 3rd power supply, and its grid is connected to three scan line；
Second thin film transistor (TFT), is connected between the 3rd node and the anode of Organic Light Emitting Diode, and its grid is connected to scan line；
3rd thin film transistor (TFT), is connected between secondary nodal point and the 3rd node, and its grid is connected to the second scanning line；
4th thin film transistor (TFT), is connected between data wire and primary nodal point；
5th thin film transistor (TFT), is connected between primary nodal point and the 3rd power supply, and its grid is connected to scan line；
6th thin film transistor (TFT), is connected between drain electrode and the 3rd node of the 7th thin film transistor (TFT), and its grid is connected to secondary nodal point；
7th thin film transistor (TFT), is connected between the source electrode of the first power supply and the 6th thin film transistor (TFT)；
First electric capacity, is connected between primary nodal point and secondary nodal point, is used for storing signal.
2. image element circuit as claimed in claim 1, it is characterized in that, also including the second electric capacity, described second electric capacity is connected between secondary nodal point and the second scanning line, and the scanning signal provided for responding described second scanning line boosts with the voltage to described secondary nodal point place.
3. image element circuit as claimed in claim 1, it is characterized in that, described first power supply and second source are used as the driving power supply of described Organic Light Emitting Diode, and described 3rd power supply is for providing initialize level for the grid of described 6th thin film transistor (TFT), the drain electrode of described 6th thin film transistor (TFT) and the anode of described Organic Light Emitting Diode.
4. image element circuit as claimed in claim 1, it is characterised in that drive the scan period of described image element circuit to include first stage to the 5th stage；
The anode of described Organic Light Emitting Diode initializes between the described first stage to phase III, the grid of described 6th thin film transistor (TFT) and drain electrode initialize in described second stage, and the threshold voltage of described 6th thin film transistor (TFT) is sampled in described fourth stage；The grid voltage of described 6th thin film transistor (TFT) was boosted by described second electric capacity in the 5th stage.
5. image element circuit as claimed in claim 4, it is characterised in that described 7th thin film transistor (TFT) is constantly in cut-off state in the described first stage.
6. image element circuit as claimed in claim 1, it is characterized in that, data voltage and the initialization voltage of described 3rd power supply offer that the electric current that described 6th thin film transistor (TFT) provides to described Organic Light Emitting Diode is provided by described data wire determine, and unrelated with the threshold voltage of the supply voltage that described first power supply and second source provide and described 6th thin film transistor (TFT).
7. the driving method of the image element circuit as according to any one of claim 1 to 6, it is characterised in that the scan period is divided into first stage, second stage, phase III, fourth stage and the 5th stage, wherein,
In the first stage, the scanning signal that scan line provides keeps low level, the scanning signal that second scanning line and the 4th scanning line provide keeps high level, the scanning signal that three scan line provides is become low level from high level, the scanning signal that 5th scanning line provides is become high level by low level, described the first film transistor is become conducting from cut-off, described 7th thin film transistor (TFT) is become cut-off from conducting, by described the first film transistor and the second thin film transistor (TFT), the anode of described Organic Light Emitting Diode is initialized；
In second stage, the scanning signal that scan line and three scan line provide keeps low level, the scanning signal that 4th scanning line and the 5th scanning line provide keeps high level, the scanning signal that second scanning line provides is become low level from high level, described 3rd thin film transistor (TFT) is become conducting from cut-off, by described the first film transistor and the 3rd thin film transistor (TFT), grid and the drain electrode of described 6th thin film transistor (TFT) is initialized；
In the phase III, the scanning signal that second scanning line and three scan line provide keeps low level, the scanning signal that 5th scanning line provides keeps high level, the scanning signal that scan line provides is become high level from low level, the scanning signal that 4th scanning line provides is become low level from high level, described second thin film transistor (TFT) and the 5th thin film transistor (TFT) become cut-off by conducting, described 4th thin film transistor (TFT) conducting, stops the initialization to described Organic Light Emitting Diode anode the one end by data voltage transmission to the first electric capacity；
In fourth stage, the scanning signal that scan line provides keeps high level, the scanning signal that second scanning line and the 4th scanning line provide keeps low level, the scanning signal that three scan line provides is become high level from low level, the scanning signal that 5th scanning line provides is become low level from high level, described the first film transistor is become cut-off from conducting, described 7th thin film transistor (TFT) is become conducting by cut-off, stops the initialization to described 6th thin film transistor (TFT) and starts the threshold voltage of described 6th thin film transistor (TFT) is sampled；
In the 5th stage, the scanning signal that the second scanning line provides is become high level from low level, and the 3rd thin film transistor (TFT) is become cut-off from conducting, and now described secondary nodal point is boosted by described second electric capacity；After 3rd thin film transistor (TFT) cut-off, the scanning signal that scan line provides is become low level from high level, the scanning signal that 4th scanning line provides simultaneously is become high level from low level, described second thin film transistor (TFT) and the 5th thin film transistor (TFT) become conducting by cut-off, described 4th thin film transistor (TFT) is become cut-off from conducting, described 6th thin film transistor (TFT) conducting, output electric current is to drive described organic light-emitting diode.
8. the driving method of image element circuit as claimed in claim 7, it is characterised in that in the described first stage, described 7th thin film transistor (TFT) is remained cut-off state.
9. the driving method of image element circuit as claimed in claim 7, it is characterised in that when described the first film transistor and the second thin film transistor (TFT) turn on jointly, described 3rd power supply the anode of described Organic Light Emitting Diode is initialized；
When described the first film transistor and the 3rd thin film transistor (TFT) turn on jointly, described 3rd power supply grid and the drain electrode of described 6th thin film transistor (TFT) are initialized.
10. an OLED, it is characterised in that including: the image element circuit as according to any one of claim 1 to 6.
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Effective date of registration: 20201210 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: No. 188, CHENFENG Road, Kunshan high tech Zone, Kunshan City, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |
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