CN103050080B - The image element circuit of organic light emitting display and driving method thereof - Google Patents
The image element circuit of organic light emitting display and driving method thereof Download PDFInfo
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Abstract
The invention provides a kind of image element circuit and driving method thereof of organic light emitting display, described image element circuit comprises: six transistors, an electric capacity and organic illuminating elements; Wherein, the 6th transistor is for determining the size of drive current, and described drive current is determined by the voltage difference of the grid of the 6th transistor and source electrode, and is provided to organic illuminating element and drives its luminescence display; The first transistor transfers to the source electrode of the 6th transistor for controlling power supply signal; Transistor seconds is used for the drive current from the 6th transistor to transfer to organic illuminating element; Third transistor, the 4th transistor and the 5th transistor are for detecting the threshold voltage of the 6th transistor and being stored to the first electric capacity.Image element circuit provided by the invention can eliminate the threshold voltage of the 6th transistor to the impact of drive current.
Description
Technical field
The present invention relates to a kind of organic light emitting display, more specifically, relate to image element circuit and the driving method of a kind of tool organic light emitting display with compensation for.
Background technology
Organic electroluminescence display device and method of manufacturing same (Organic ElectroluMinesence Display, OELD) is a kind of by utilizing electric current to excite organic principle to drive each organic light-emitting units to show the display of image.
The structure of described organic light-emitting units is: anode layer, organic luminous layer, cathode metal layer, luminescence efficiency is strengthened in order to have good electron-hole balance, described organic luminous layer is a kind of sandwich construction, comprise: emission layer, electron transfer layer, hole transmission layer, electron injecting layer and hole injection layer can also be comprised.
Thin film transistor (TFT) (Thin Film Transistor can be used to the driving of organic light-emitting units, TFT) active drive method, Fig. 1 shows the circuit diagram of an organic pixel unit, and current drive transistor M2 is connected to organic illuminating element, to provide the electric current of illuminating.Being controlled the magnitude of current of current drive transistor M2 by the data voltage provided by switching transistor M1, connecting an electric capacity Cst between the source electrode of current drive transistor M2 and grid here, for maintaining provided one period of predetermined time of voltage.The grid of switching transistor M1 is connected to selects signal wire Select, and source electrode is connected to data line Vdata.
In said structure, when switching transistor M1 conducting, data voltage is provided to the grid of current drive transistor M2 by data line Vdata, and power supply signal Vdd flows into organic illuminating element, then organic illuminating element luminescence display by current drive transistor M2.The current formula flowing into organic illuminating element represents with equation 1.
[equation 1]
Wherein: I
oLEDfor flowing into the electric current of organic illuminating element; Vgs is the voltage between the grid of current drive transistor M2 and source electrode; Vth is the threshold voltage of current drive transistor M2; Vdata is data voltage; Vdd is power supply signal voltage.Can find out from above formula, in above-mentioned pixel cell, electric current I
oLEDdepend on the threshold voltage vt h of current drive transistor M2.Due to the unevenness in processing procedure process, the threshold voltage of the driving transistors of different pixels unit is different, causes the difficulty when accurately showing image to increase.
Summary of the invention
For solving the threshold voltage of driving transistors to the impact of drive current, the invention provides a kind of image element circuit of organic light emitting display, it is characterized in that, comprising: the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the first electric capacity and organic illuminating element; 6th transistor is for determining the size of drive current, and described drive current is determined by the grid of the 6th transistor and source voltage difference, and is provided to organic illuminating element, drives its luminescence display; The first transistor transfers to the source electrode of the 6th transistor for controlling power supply signal; Transistor seconds is used for the drive current from the 6th transistor to transfer to organic illuminating element; Third transistor, the 4th transistor and the 5th transistor are for detecting the threshold voltage of the 6th transistor and being stored to the first electric capacity.
Alternatively, the first electrode of described the first transistor is connected with power supply signal, and the first electrode of transistor seconds is connected with light-emitting component, and the first electrode of third transistor is connected with data-signal; At first node, the first electrode of the 5th transistor is connected with the top crown of the first electric capacity; At Section Point, the bottom crown of the first electric capacity, the first electrode of the 4th transistor are connected with the grid of the 6th transistor; At the 3rd node, the second electrode of the second electrode of the first transistor, the second electrode of third transistor, the 5th transistor is connected with the source electrode of the 6th transistor; At the 4th node, the second electrode of transistor seconds, the second electrode of the 4th transistor are connected with the drain electrode of the 6th transistor.
Alternatively, described the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor and the 6th transistor are P-type crystal pipe.
Alternatively, also comprise five external drive signals, control the first transistor, transistor seconds, third transistor, the 4th transistor and the 5th transistor respectively.
Alternatively, described five external drive signals are provided by the raster data model line of active display.
Alternatively, also comprise five external drive signals, described first drive singal controls the first transistor, described second drive singal controls transistor seconds, described 3rd drive singal controls third transistor and the 4th transistor, described four-wheel drive signal controls the 5th transistor, described 5th drive singal control data signal.
Alternatively, the first drive singal provides to the raster data model line of four-wheel drive signal by active display, and described 5th drive singal is provided by the data-driven line of active display.
Alternatively, described the first transistor, third transistor are N-type transistor, and described transistor seconds, the 4th transistor, the 5th transistor and the 6th transistor are P-type crystal pipe.
Alternatively, also comprise two external drive signals, described the first transistor, the 4th transistor and the 5th transistor are controlled by the first drive singal, and described transistor seconds and third transistor are controlled by the second drive singal.
Alternatively, described two drive singal are provided by the raster data model line of active display.
Alternatively, described 5th transistor is double gate transistor.
Alternatively, described 4th transistor is double gate transistor.
Alternatively, also comprise the second electric capacity, described second capacitances in series is between the first electric capacity and power supply signal.
Alternatively, described transistor is low-temperature polycrystalline silicon transistor.
Alternatively, the driving of described image element circuit is divided into initial phase, write detection-phase and display three phases.
Alternatively, at described initial phase, the negative electrode low-voltage of organic illuminating element transfers to the grid of the 6th transistor by transistor seconds and the 4th transistor, control its conducting.
Alternatively, at said write detection-phase, image element circuit detects the threshold voltage of the 6th transistor and is stored on the first electric capacity.
Alternatively, at said write detection-phase, third transistor and the 5th transistor controls data-signal transfer to the top crown of the first electric capacity, third transistor, the 6th transistor and the 4th transistor controls data-signal transfer to the bottom crown of the first electric capacity, described 6th transistor ends when the pressure reduction of its grid and source electrode equals its threshold voltage, when the 6th transistor cutoff, its threshold voltage is stored on the first electric capacity.
Alternatively, in the described display stage, image element circuit produces drive current and is provided to organic illuminating element, for driving the luminescence display of organic illuminating element.
Alternatively, in the described display stage, the first transistor conducting is to the source electrode transmission supply voltage of the 6th transistor, the size of the 6th transistor determination drive current, described drive current is determined by the 6th transistor gate and source voltage difference, and described drive current is transferred to organic illuminating element by transistor seconds.
The invention has the advantages that:
1. image element circuit provided by the invention can eliminate the impact of threshold voltage on drive current of driving transistors, makes the display of organic light emitting display more all even stable;
2. image element circuit provided by the invention is when rationally arranging the type of each transistor, can reduce drive wire, make the driving method of image element circuit, circuit design etc. more convenient;
3. image element circuit provided by the invention is connected the threshold voltage of second electric capacity, the maintenance driving transistors that the first electric capacity can be made more stable between power supply signal and the first electric capacity, improves the reliability of image element circuit;
4.the transistor be connected with the first electric capacity is set to double gate transistor by image element circuit provided by the invention, further increases the reliability of image element circuit.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of a pixel cell in prior art;
Fig. 2 shows the schematic diagram of the first embodiment image element circuit in the present invention;
Fig. 3 is the signal timing diagram of the driving method of first embodiment of the invention image element circuit;
Fig. 4 is the current path schematic diagram of initial phase T10;
Fig. 5 is the current path schematic diagram of write detection-phase T20;
Fig. 6 is the current path schematic diagram of display stage T30;
Fig. 7 shows the schematic diagram of the second embodiment image element circuit in the present invention;
Fig. 8 is the signal timing diagram of the driving method of second embodiment of the invention image element circuit;
Fig. 9 shows the schematic diagram of the 3rd embodiment image element circuit in the present invention;
Figure 10 is the signal timing diagram of the driving method of third embodiment of the invention image element circuit;
Figure 11 is the schematic diagram of fourth embodiment of the invention image element circuit;
Figure 12 is the schematic diagram of fifth embodiment of the invention image element circuit.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.Principle of the present invention is described, so do not draw to scale owing to focusing on.Below be only preferred embodiment of the present invention, not the present invention imposed any restrictions.Do not departing under technical solution of the present invention ambit, the variation utilizing the technology contents of above-mentioned announcement to make technical solution of the present invention and modification, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
first embodiment
Figure 2 shows that the image element circuit schematic diagram of the organic light emitting display that first embodiment of the invention provides, the image element circuit of the first embodiment comprises the first transistor M1, transistor seconds M2, third transistor M3, the 4th transistor M4, the 5th transistor M5, the 6th transistor M6, the first electric capacity C1 and organic illuminating element OLED as shown in the figure.In the present embodiment, described the first transistor M1 to the 6th transistor M6 is P-type crystal pipe (P-channel TFT).
First electrode of the first transistor M1 is connected with power supply signal Vdd, and first electrode of transistor seconds M2 is connected with light-emitting component OLED, and first electrode of third transistor M3 is connected with data-signal Vdata;
At first node N1, first electrode of the 5th transistor M5 is connected with the top crown of the first electric capacity C1;
At Section Point N2, the bottom crown of the first electric capacity C1, first electrode of the 4th transistor M4 are connected with the grid of the 6th transistor M6;
Be connected with the source electrode of the 6th transistor M6 at second electrode of the 3rd node N3, the first transistor M1, second electrode of third transistor M3, second electrode of the 5th transistor M5;
Be connected with the drain electrode of the 6th transistor M6 at second electrode of the 4th node N4, transistor seconds M2, second electrode of the 4th transistor M4.
Below the Main Function of device in the image element circuit of the present embodiment is specifically introduced: the 6th transistor M6 is the driving transistors of image element circuit, for determining the size of drive current, described drive current is determined by the grid of the 6th transistor and the voltage difference of source electrode, described drive current is provided to organic illuminating element OLED, for driving its luminescence display.The first transistor M1 transfers to the source electrode of the 6th transistor M6 for controlling power supply signal Vdd.Transistor seconds M2 is used for the drive current from the 6th transistor M6 to transfer to organic illuminating element OLED.Third transistor M3, the 4th transistor M4 and the 5th transistor M5 are for detecting the threshold voltage vt h of the 6th transistor M6 and being stored to the first electric capacity C1.
Fig. 3 is the signal timing diagram of the first driving method of first embodiment of the invention image element circuit, drive singal S10 controls the first transistor M1 particularly, drive singal S20 controls transistor seconds M2, drive singal S30 controls third transistor M3, drive singal S40 controls the 4th transistor M4, drive singal S50 and controls the 5th transistor M5.Described drive singal S10 to S50 is provided by the raster data model line of organic light emitting display.
The first driving method of the image element circuit of first embodiment of the invention is divided into initial phase, write detection-phase and display stage three phases, T10, T20 and T30 time period respectively in corresponding diagram 3.Above-mentioned three time periods can be discontinuous, coordinates the driver' s timing of external circuit, can have interval between described three time periods.
Fig. 4 is the current path schematic diagram of initial phase T10, Fig. 5 is the current path schematic diagram of write detection-phase T20, Fig. 6 is the current path schematic diagram of display stage T30, Fig. 4 to Fig. 6 has marked the path of electric current to make the more convenient arrow of explanation, and by represented by dashed line for the transistor being in cut-off state.The first driving method and its course of work of the image element circuit of first embodiment of the invention is illustrated below in conjunction with Fig. 2 to Fig. 6.
As shown in Figure 3 and Figure 4, be noble potential at initial phase T10, S10, the first transistor M1 is in cut-off state; S20 is electronegative potential, transistor seconds M2 conducting; S30 is noble potential, and third transistor M3 is in cut-off state; S40 is electronegative potential, the 4th transistor M4 conducting; S50 is electronegative potential, the 5th transistor M5 conducting.As can be seen from Figure 4, between transistor seconds M2 and the 4th transistor M4, form current path, the negative electrode electronegative potential Vss of organic illuminating element OLED arrives Section Point N2 by above current path.Section Point N2 also namely the bottom crown of the first electric capacity C1 and the grid of the 6th transistor M6 be electronegative potential, can be considered it is that the initialization of whole image element circuit completes.
As shown in Figure 3 and Figure 5, at write detection-phase T20, S10 is noble potential, and the first transistor M1 ends; S20 is noble potential, and transistor seconds M2 ends; S30 is electronegative potential, third transistor M3 conducting; S40 is electronegative potential, the 4th transistor M4 conducting; S50 is electronegative potential, the 5th transistor M5 conducting.As can be seen from Figure 5, one article of current path is formed between third transistor M3 and the 5th transistor M5, data-signal Vdata transfers to first node N1 by described current path, also be the top crown of the first electric capacity C1, the current potential of the top crown of the first electric capacity C1 is the current potential of data-signal Vdata.Simultaneously, because at initial phase T10, the grid of the 6th transistor M6 is electronegative potential, make the 6th transistor M6 conducting, then at third transistor M3, form another article of current path between the 6th transistor M6 and the 4th transistor M4, data-signal Vdata transfers to Section Point N2 by above-mentioned current path; The current potential of Section Point N2 being drawn high by data-signal Vdata gradually, according to the voltage-current characteristic of TFT, when the grid voltage of transistor and the voltage difference of source voltage are less than the threshold voltage of transistor, transistor cutoff, also namely when the grid voltage of the 6th transistor M6 be driven high be less than or equal to the threshold voltage vt h of the 6th transistor M6 to the voltage difference with its source electrode time, the 6th transistor M6 will be in off state.Because the source electrode of the 6th transistor M6 is connected current potential with data-signal Vdata and remains unchanged, so when the 6th transistor M6 ends, the current potential of the grid of the 6th transistor M6 is (Vdata+Vth), wherein, Vdata is voltage data signal, and Vth is the threshold voltage of the 6th transistor M6.
Now, the voltage difference of the first electric capacity C1 bottom crown and top crown represents with equation 2:
[equation 2]: Vcth=n2-n1=(Vdata+Vth)-Vdata=Vth
In equation 2, Vcth represents the voltage on the first electric capacity C1, and n2 represents the current potential of Section Point N2, and n1 represents the current potential of first node N1.Then at write detection-phase T20, voltage difference between the bottom crown of the first electric capacity C1 and top crown is the threshold voltage vt h of the 6th transistor M6, that is detected the threshold voltage vt h of the 6th transistor M6 at write detection-phase T20, and its value is stored on the first electric capacity C1.
As shown in Figure 3 and Figure 6, be electronegative potential at display stage T30, S10, the first transistor M1 conducting; S20 is electronegative potential, transistor seconds M2 conducting; S30 is noble potential, and third transistor M3 ends; S40 is noble potential, and the 4th transistor M4 ends; S50 is noble potential, and the 5th transistor M5 ends.
As can be seen from Figure 6, a current path is formed between the first transistor M1, the 6th transistor M6 and transistor seconds M2, because the first transistor M1 is operated in linear zone, the effect of effect and resistance is similar, and power supply signal Vdd transfers to the source electrode of the 6th transistor M6 by the first transistor M1.
Now, the gate source voltage Vgs of the 6th transistor M6 represents with equation 3:
[equation 3]: Vgs=n2-Vdd=(Vdata+Vth)-Vdd
Because the 6th transistor M6 is operated in saturation region, the drive current flowing through its raceway groove is determined by the voltage difference of its grid and source electrode.Current formula (representing with equation 4) according to TFT saturation region:
[equation 4]: I
oLED=β/2(Vgs-Vth)
2=β/2 [(Vdata+Vth-Vdd)-Vth]
2
=β/2（Vdata-Vdd）
2
In equation 4, I
oLEDrepresent the drive current that the 6th transistor M6 produces, namely drive the drive current of organic illuminating element OLED, β represents constant, Vgs represents the voltage difference between the grid of the 6th transistor M6 and source electrode, Vth represents the threshold voltage of the 6th transistor M6, Vdata represents data-signal, and Vdd represents power supply signal.
Transistor seconds M2 is also operated in linear zone, and it is by above-mentioned drive current I
oLEDtransfer to organic illuminating element OLED, drive its luminescence display.
Can be drawn by equation 4, I
oLEDnot by the impact of the threshold voltage vt h of the 6th transistor M6.OLED pixel circuit provided by the invention, can eliminate the threshold voltage vt h of the 6th transistor M6 to drive current I
oLEDimpact, thus make the display of each pixel stable and evenly, obtain good display effect.
second embodiment
Fig. 7 is the image element circuit figure that the present invention second implements, and Fig. 8 is the signal timing diagram of second embodiment of the invention pixel circuit drive method.Be not described in detail with the first embodiment something in common, differently with the first embodiment be to drive the drive singal of each transistor different, please refer to Fig. 7 particularly, drive singal S11 controls the first transistor M1, drive singal S21 controls transistor seconds M2, drive singal S31 controls third transistor M3 and the 4th transistor M4, drive singal S41 control the 5th transistor M5, drive singal Vdata control data signal.Described drive singal S11, S21, S31 and S41 are provided by the raster data model line of active display, and described drive singal Vdata is provided by the data-driven line of active display.
The second driving method of first embodiment of the invention is also divided into initial phase, write detection-phase and display stage three phases, T11, T21 and T31 time period respectively in corresponding diagram 8.The second driving method and the course of work of the image element circuit of first embodiment of the invention are described below in conjunction with Fig. 7 and Fig. 8.
As shown in Figure 7 and Figure 8, at initial phase T11, drive singal S11 is noble potential, and the first transistor M1 ends; Drive singal S21 is electronegative potential, transistor seconds M2 conducting; Drive singal S31 is electronegative potential, third transistor M3 conducting, the 4th transistor M4 conducting; Drive singal S41 is electronegative potential, the 5th transistor M5 conducting.Between transistor seconds M2 and the 4th transistor M4, form current path, the negative electrode electronegative potential Vss of organic illuminating element OLED transfers to Section Point N2 by above current path.Simultaneously because the data-signal Vdata at initial phase T11 is electronegative potential, so the current potential transferring to Section Point N2 is also electronegative potential.Section Point N2 has electronegative potential, can be considered it is that the initialization of whole image element circuit completes.
At write detection-phase T21, drive singal S11 is noble potential, and the first transistor M1 ends; Drive singal S21 is noble potential, and transistor seconds M2 ends; Drive singal S31 is electronegative potential, third transistor M3 conducting, the 4th transistor M4 conducting; Drive singal S41 is electronegative potential, the 5th transistor M5 conducting; Data-signal Vdata is noble potential.The current path figure of the T20 time period of the first driving method of now with the first embodiment is consistent.
Display stage T33, drive singal S11 be electronegative potential, the first transistor M1 conducting; Drive singal S21 is electronegative potential, transistor seconds M2 conducting; Drive singal S31 is noble potential, and third transistor M3 cut-off, the 4th transistor M4 end; Drive singal S41 is noble potential, and the 5th transistor M5 ends; Data-signal Vdata is electronegative potential.Now consistent with the current path figure of the display stage T30 of the first driving method of the first embodiment shown in Fig. 6.
The second driving method of first embodiment of the invention image element circuit is all consistent at the first driving method of initial phase T11, write detection-phase T21, display stage T31 and the first embodiment image element circuit at the current path figure of initial phase T10, write detection-phase T20, display stage T30 and mode of operation, introduces no longer in detail herein.
The advantage of first embodiment of the invention image element circuit the second driving method is: make third transistor M3 and the 4th transistor M4 only use same drive singal to control by the change of data-signal Vdata, the quantity of gate drive signal line can be reduced, make the driving method of image element circuit, circuit design etc. more convenient.
3rd embodiment
Fig. 9 shows the schematic diagram of the 3rd embodiment image element circuit in the present invention, and Figure 10 is the signal timing diagram of third embodiment of the invention pixel circuit drive method, and existing composition graphs 9 and Figure 10 are described the present embodiment.
No longer elaborate with the first embodiment something in common, the second embodiment and first is implemented difference and is: transistor seconds M2, the 4th transistor M4 and the 5th transistor M5 are P-type crystal pipe (P-channel TFT); The first transistor M11 and third transistor M33 is N-type transistor (N-channel TFT).The first transistor M11, the 4th transistor M4 and the 5th transistor M5 are controlled by drive singal S12, and transistor seconds M2 and third transistor M33 is controlled by drive singal S22.
At initial phase T12, drive singal S12 is electronegative potential, and the first transistor M11 ends, the 4th transistor M4 conducting, the 5th transistor M5 conducting; Drive singal S22 is electronegative potential, transistor seconds M2 conducting, and third transistor M33 ends; The negative electrode electronegative potential Vss of organic illuminating element OLED arrives Section Point N2 via transistor seconds M2 and the 4th transistor M4, is dragged down by the current potential at Section Point N2 place.
At write detection-phase T22, drive singal S12 is electronegative potential, and the first transistor M11 ends, the 4th transistor M4 conducting, the 5th transistor M5 conducting, drive singal S22 is noble potential, and transistor seconds M2 ends, third transistor M33 conducting, data-signal Vdata is via third transistor M33, 5th transistor M5 transfers to first node N1, again because now Section Point N2 is electronegative potential, so the 6th transistor M6 is in conducting state, data-signal Vdata is via third transistor M33, 6th transistor M6 and the 4th transistor M4 transfers to Section Point N2, the current potential of Section Point N2 being drawn high by data-signal Vdata gradually, when the grid voltage of the 6th transistor M6 be driven high be less than or equal to the threshold voltage vt h of the 6th transistor M6 to the voltage difference with its source electrode time, 6th transistor M6 will be in cut-off state.Because the source electrode of the 6th transistor M6 is connected current potential with data-signal Vdata and remains unchanged, so when the 6th transistor M6 ends, the current potential of the grid of the 6th transistor M6 is (Vdata+Vth), wherein, Vdata is data-signal, and Vth is the threshold voltage of the 6th transistor M6.Pressure reduction between the top crown of the first electric capacity C1 and bottom crown is Vth.At write detection-phase T22, the value of the threshold voltage vt h of the 6th transistor M6 is stored on the first electric capacity C1.
Display stage T32, drive singal S12 be noble potential, the first transistor M11 conducting, the 5th transistor M5 ends, and the 4th transistor M4 ends; Drive singal S22 is electronegative potential, and third transistor M33 ends, transistor seconds M2 conducting.Between the first transistor M11, the 6th transistor M6 and transistor seconds M2, form a current path, the grid of the 6th transistor M6 and source electrode determine the size of drive current, and are provided to organic illuminating element OLED, make its luminescence display.
In each stage, the specific works process of the image element circuit that second embodiment of the invention provides and principle of work are identical with the image element circuit that the first embodiment provides, no longer describe in detail herein, specifically can with reference to the first embodiment part.
In second embodiment of the invention, by arranging the first transistor M11, third transistor M33, for N-type transistor, drive singal S12 can be used to control the first transistor M11, the 4th transistor M4 and the 5th transistor M5, drive singal S22 control transistor seconds M2 and third transistor M33.The drive singal of image element circuit is reduced to two, makes the driving method of image element circuit, circuit design etc. more convenient.But the present invention is not limited to the restriction of above specific embodiment, also by other means, the type of each transistor in image element circuit can be rationally set, reduce the drive singal that image element circuit uses, to reach the object simplifying circuit.
4th embodiment
Figure 11 is the schematic diagram of fourth embodiment of the invention image element circuit, and the first embodiment something in common is not described in detail, and the first embodiment difference is that the image element circuit of the 3rd embodiment also comprises the second electric capacity C2.The top crown of described second electric capacity C2 connects power supply signal Vdd, and the bottom crown of described second electric capacity C2 connects the top crown of the first electric capacity C1.
In the present invention, first electric capacity C1 is used to the threshold voltage vt h's of storage the 6th transistor M6, the effect that the threshold voltage vt h only having the threshold voltage vt h that stably can maintain the 6th transistor M6 between the top crown of the first electric capacity C1 and bottom crown just can play elimination the 6th transistor M6 affects circuit.
But because each transistor all can have stray capacitance to exist, the transistor be connected with the first electric capacity C1 all can affect the voltage of the first electric capacity C1.Such as, 5th transistor M5 can affect the current potential of the first electric capacity C1 top crown, 6th transistor M 6 and the 4th transistor M4 can affect the electric capacity of the first electric capacity C1 bottom crown, like this with regard to causing the capacitance of the first electric capacity C1 to have variation, can affect the working effect of whole circuit.
In 3rd embodiment, connected a second electric capacity C2 in the middle of power supply signal Vdd and the first electric capacity C2.Data-signal Vdata arrives the bottom crown of the second electric capacity C2 by third transistor M3 and the 5th transistor M5, and the top crown of the second electric capacity C2 connects power supply signal Vdd, and the pressure reduction between the top crown of the second electric capacity C2 and bottom crown is (Vdd-Vdata).Power supply signal Vdd is a stable signal source, so the pressure reduction between the top crown of the second electric capacity C2 and bottom crown also can stable maintenance.The top crown of the first electric capacity C1 is connected with the bottom crown of the second electric capacity C2, so pressure reduction stable between the first electric capacity C1 top crown and bottom crown also can be kept, and the threshold voltage vt h of storage the 6th transistor M6 of Absorbable organic halogens.
Third embodiment of the invention improves the stability of voltage difference between the first electric capacity C1 top crown and bottom crown on the basis of the first embodiment, makes the performance of image element circuit more reliable.
5th embodiment
Figure 12 is the schematic diagram of fifth embodiment of the invention image element circuit, be not described in detail with the first embodiment something in common, be that with the first embodiment difference the 4th transistor M40 of the image element circuit of the 4th embodiment is double gate transistor, the 5th transistor M50 is also double gate transistor.
The top crown of the first electric capacity C1 connects first electrode of the 5th transistor M50, and the bottom crown of the first electric capacity C1 connects first electrode of the 4th transistor M40, and the 5th transistor M50 and the 4th transistor M40 is two predominating paths that the first electric capacity C1 leaks electricity.Generally, transistor still has 10 when grid applies low-voltage
-12~ 10
-13leakage current.In order to avoid transistor leakage is on the impact of image element circuit, the 4th transistor M40 and the 5th transistor M50 is set to double gate transistor, can leakage current be effectively reduced, improve the reliability of image element circuit further.
Although the present invention with preferred embodiment openly as above; but it is not for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; the Method and Technology content of above-mentioned announcement can be utilized to make possible variation and amendment to technical solution of the present invention; therefore; every content not departing from technical solution of the present invention; the any simple modification done above embodiment according to technical spirit of the present invention, equivalent variations and modification, all belong to the protection domain of technical solution of the present invention.
Claims (16)
1. an image element circuit for organic light emitting display, is characterized in that, comprising: the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor, the 6th transistor, the first electric capacity and organic illuminating element;
6th transistor is for determining the size of drive current, and described drive current is determined by the grid of the 6th transistor and the voltage difference of source electrode and is provided to organic illuminating element, drives its luminescence display;
The first transistor transfers to the source electrode of the 6th transistor for controlling power supply signal;
Transistor seconds is used for the drive current from the 6th transistor to transfer to organic illuminating element;
Third transistor, the 4th transistor and the 5th transistor are for detecting the threshold voltage of the 6th transistor and being stored to the first electric capacity;
First electrode of the first transistor is connected with power supply signal, and the first electrode of transistor seconds is connected with light-emitting component, and the first electrode of third transistor is connected with data-signal;
At first node, the first electrode of the 5th transistor is connected with the top crown of the first electric capacity;
At Section Point, the bottom crown of the first electric capacity, the first electrode of the 4th transistor are connected with the grid of the 6th transistor;
At the 3rd node, the second electrode of the second electrode of the first transistor, the second electrode of third transistor, the 5th transistor is connected with the source electrode of the 6th transistor;
At the 4th node, the second electrode of transistor seconds, the second electrode of the 4th transistor are connected with the drain electrode of the 6th transistor.
2. image element circuit as claimed in claim 1, it is characterized in that, described the first transistor, transistor seconds, third transistor, the 4th transistor, the 5th transistor and the 6th transistor are P-type crystal pipe.
3. image element circuit as claimed in claim 2, it is characterized in that, also comprise the raster data model line of organic light emitting display, described raster data model line provides five external drive signals, controls the first transistor, transistor seconds, third transistor, the 4th transistor and the 5th transistor respectively.
4. image element circuit as claimed in claim 2, it is characterized in that, also comprise raster data model line and the data-driven line of organic light emitting display, described raster data model line provides the first drive singal to four-wheel drive signal, described data-driven line provides the 5th drive singal, first drive singal controls the first transistor, second drive singal controls transistor seconds, 3rd drive singal controls third transistor and the 4th transistor, four-wheel drive signal controls the 5th transistor, the 5th drive singal control data signal.
5. image element circuit as claimed in claim 1, it is characterized in that, described the first transistor, third transistor are N-type transistor, and described transistor seconds, the 4th transistor, the 5th transistor and the 6th transistor are P-type crystal pipe.
6. image element circuit as claimed in claim 5, it is characterized in that, also comprise the raster data model line of organic light emitting display, described raster data model line provides two external drive signals, described the first transistor, the 4th transistor and the 5th transistor are controlled by the first drive singal, and described transistor seconds and third transistor are controlled by the second drive singal.
7. image element circuit as claimed in claim 1, it is characterized in that, described 5th transistor is double gate transistor.
8. image element circuit as claimed in claim 1, it is characterized in that, described 4th transistor is double gate transistor.
9. image element circuit as claimed in claim 1, it is characterized in that, also comprise the second electric capacity, described second capacitances in series is between the first electric capacity and power supply signal.
10. image element circuit as claimed in claim 1, it is characterized in that, described transistor is low-temperature polycrystalline silicon transistor.
11. image element circuits as claimed in claim 1, is characterized in that, the driving of described image element circuit is divided into initial phase, write detection-phase and display three phases.
12. image element circuits as claimed in claim 11, is characterized in that, at described initial phase, the negative electrode low-voltage of organic illuminating element transfers to the grid of the 6th transistor by transistor seconds and the 4th transistor, control its conducting.
13. image element circuits as claimed in claim 11, is characterized in that, at said write detection-phase, image element circuit detects the threshold voltage of the 6th transistor and is stored on the first electric capacity.
14. image element circuits as claimed in claim 13, it is characterized in that, at said write detection-phase, third transistor and the 5th transistor controls data-signal transfer to the top crown of the first electric capacity, third transistor, the 6th transistor and the 4th transistor controls data-signal transfer to the bottom crown of the first electric capacity, and described 6th transistor ends when the pressure reduction of its grid and source electrode equals its threshold voltage; When the 6th transistor cutoff, its threshold voltage is stored on the first electric capacity.
15. image element circuits as claimed in claim 11, is characterized in that, in the described display stage, image element circuit produces drive current and is provided to organic illuminating element, for driving the luminescence display of organic illuminating element.
16. image element circuits as claimed in claim 15, it is characterized in that, in the described display stage, the first transistor conducting is to the source electrode transmission supply voltage of the 6th transistor, 6th transistor is for determining the size of drive current, described drive current is determined by the voltage difference of the 6th transistor gate and source electrode, and described drive current is transferred to organic illuminating element by transistor seconds.
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| CN201110305758.2A CN103050080B (en) | 2011-10-11 | 2011-10-11 | The image element circuit of organic light emitting display and driving method thereof |
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