CN104198323B - Highly sensitive acid sensor - Google Patents
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- CN104198323B CN104198323B CN201410400257.6A CN201410400257A CN104198323B CN 104198323 B CN104198323 B CN 104198323B CN 201410400257 A CN201410400257 A CN 201410400257A CN 104198323 B CN104198323 B CN 104198323B
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- 239000002253 acid Substances 0.000 title claims abstract description 34
- 239000010453 quartz Substances 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 230000005291 magnetic effect Effects 0.000 claims abstract description 39
- 239000000696 magnetic material Substances 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims abstract description 36
- 238000000576 coating method Methods 0.000 claims abstract description 36
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052737 gold Inorganic materials 0.000 claims abstract description 22
- 239000010931 gold Substances 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000013078 crystal Substances 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 16
- 230000010355 oscillation Effects 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 7
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910001021 Ferroalloy Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 230000005294 ferromagnetic effect Effects 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 239000004575 stone Substances 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- 150000003624 transition metals Chemical class 0.000 claims description 2
- 238000005303 weighing Methods 0.000 abstract description 6
- 238000003380 quartz crystal microbalance Methods 0.000 abstract 2
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 230000008859 change Effects 0.000 description 14
- 230000035945 sensitivity Effects 0.000 description 8
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical group [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910002555 FeNi Inorganic materials 0.000 description 3
- -1 MnAlC Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910000828 alnico Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910004860 CaZn Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910015372 FeAl Inorganic materials 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 229910000604 Ferrochrome Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910017706 MgZn Inorganic materials 0.000 description 1
- 229910016629 MnBi Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910003962 NiZn Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910002837 PtCo Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910000777 cunife Inorganic materials 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 150000004032 porphyrins Chemical class 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)
- Hall/Mr Elements (AREA)
Abstract
The invention relates to a highly sensitive acid sensor. The acid sensor comprises a packaged sensor body, a quartz sensor chip, chrome plating, gold plating, a magnetic device and a magnetic material plating. A quartz oscillating circuit is arranged in the sensor body. The chrome plating are respectively plated on the upper surface and the lower surface of the sensor quartz sensor chip. Gold plating are respectively plated on surfaces of the chrome plating. The magnetic device is arranged in the sensor body right under the sensor quartz sensor chip near the gold plating. An iron magnetic plating is arranged right above the sensor quartz sensor chip and plated on the gold coating. The acid sensor is applied for measuring acid and is highly sensitive, simple in structure and easy to use compared with a traditional quality weighing sensor (QCM, quartz crystal microbalance) such as in the American patent US7,322,243.
Description
Technical field
The present invention relates to a kind of highly sensitive acid sensor, belong to quality LOAD CELLS field.
Background technology
Quality weighing sensor is widely used in granule and weighs, chemical and biosensor.Quartz oscillation balance is exactly
A kind of quality weighing sensor, the most basic principle of QCM (QCM) is the piezoelectric effect that make use of quartz crystal：
Quartz crystal each lattice internal is in regular hexagon when not being subject to external force effect, if applying mechanical pressure, meeting in the both sides of chip
So that the charge-site of lattice is shifted and polarize, then will produce electric field on the corresponding direction of chip；If conversely, in quartz-crystal
One electric field is added on two electrodes of body, chip will produce mechanically deform, and this physical phenomenon is referred to as piezoelectric effect.If in crystalline substance
Alternating voltage is added on the two poles of the earth of piece, chip will produce mechanical vibration, and the mechanical vibration of chip simultaneously can produce alternating electric field again.
In general, the amplitude of chip mechanical vibration and the amplitude of alternating electric field are very small, but the frequency when additional alternating voltage
When rate is a certain particular value, amplitude substantially increases, and this phenomenon is referred to as piezoelectric resonator.Its resonance phenomena ten with LC loop in fact
Split-phase is seemingly：When crystal does not vibrate, it be regarded as a plate condenser so long and be referred to as electrostatic capacitance C, typically about several PF are to several
Ten PF；When crystal oscillation, the inertia of mechanical vibration can be with inductance L Lai equivalent, and the value of general L is tens mH to hundreds of mH.By
This just constitutes the agitator of QCM, and the frequency of oscillation of circuit is equal to the resonant frequency of quartz crystal oscillator plate,
Again the resonant frequency recording is converted into by electric signal output by main frame.Due to chip itself resonant frequency substantially only with crystalline substance
The cutting mode of piece, geometry, size are relevant, and can be made accurately, hence with the vibration of quartz resonator composition
Circuit can obtain very high frequency stability.
Nineteen fifty-nine Sauerbrey under conditions of being attached to the gold electrode surfaces of QCM with supposing outer blessing amount homogenous rigidity,
Draw the conclusion that the resonant frequency change of QCM is directly proportional to additional quality.For rigid deposit, crystal oscillation frequency changes
The quality that △ F is proportional to deposit on working electrode changes △ M.Can get the quality of QCM electrode surface by this relational expression
Change.
QCM is mainly made up of parts such as quartz crystal sensor, the process of signal detection data.Quartz crystal sensor
Basic composition is about：Along becoming 35 ° of 15' cutting (AT CUT) to obtain with quartz crystal primary optical axis from one piece of quartz crystal
Quartz crystal oscillator plate, on its two corresponding surfaces, as electrode, quartz crystal is clipped in shape in the middle of two plate electrodes to coating silver layer
Become sandwich structure.Respectively weld a lead on each electrode to be connected on pin, along with package casing just constitutes quartz-crystal
Body resonator, its product typically uses packed by metal casing, also useful glass shell, pottery or Plastic Package.
The sensitivity of quartz weighing balance is to get from Sauerbrey equation, quartz oscillation balance frequency change △ F and
Mass change value △ M has following relation：△ F=CfBefore and after △ M, wherein △ F are the material of weighing that quartzy balance is observed
Frequency change, △ M is mass change value before and after the material of weighing that quartzy balance is observed, CfWeigh material matter for quartzy balance
Constant coefficients during amount.From above-mentioned formula, the sensitivity of QCM is by CfDetermine.
Existing acid sensor is only the thin film being coated with one layer of ferrum on one side electrode of QCM, and sensitivity is not high.
Content of the invention
The technical problem to be solved is to provide a kind of highly sensitive acid sensor, this acid sensor relatively on
Stating Sauerbrey formula has higher sensitivity.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of highly sensitive acid sensor, including encapsulation
Sensor body well, quartz transducer chip, chrome plating, gold plate, magnetic devices and magnetic material coating, described sensor
Inside be provided with crystal oscillation circuit, two electrodes of described crystal oscillation circuit are separately positioned on described quartz transducer chip
Upper and lower surface, described quartz transducer chip is arranged on the top of described sensor, the upper table of described quartz transducer chip
Face and lower surface are coated with one layer of chrome plating respectively, and the surface of described chrome plating is coated with one layer of gold plate, described sensor interior
Portion is additionally provided with magnetic devices, and described magnetic devices are located at the underface of described quartz transducer chip, and near described gold plate,
Described magnetic material coating is located at the surface of described quartz transducer chip, and is plated on described gold plate.
The invention has the beneficial effects as follows：
Than traditional acid sensor, such as United States Patent (USP), US7,322,243, the present invention has higher sensitivity, and
And structure is simple, easy to use.
On the basis of technique scheme, the present invention can also do following improvement.
Further, described magnetic material coating is by having the magnetic organo-metallic material that can react or no with acid
Machine material is made.
Described organo-metallic material refers to containing stabilized radical and has the organic compound of ferromagnetic interaction or contain
The complex of transition metal.Such as diethyldithiocarbamate-Fe (III) chloride compound, DNPN
(Porphyrin dendrimers) etc..
Described inorganic substances are metal simple-substance or metal alloy.
Described metal simple-substance is ferrum, cobalt or nickel.
Described metal alloy is ferroalloy, cobalt alloy or nickel alloy.
Described metal alloy is MnBi, AlNiCo, FeCr, FeCrCo, FeCrMo, FeAlC, FeCo, FeCoV.FeCoW,
Re-Co (Re represents rare earth element), PtCo, MnAlC, CuNiFe, AlMnAg, XO 6Fe2O3, X represent Ba, Sr, Pb or
SrCa, LaCa, FeNi (Mo), FeS i, FeAl, Fe base, Co base, FeNi base or FeNiCo base etc. be equipped with suitable Si, B, P and
Other doped chemicals.FeNi (Mo), FeSiAl, carbonyl iron and ferrite.YO·Fe2O3(M represents NiZn, MnZn, MgZn, Li1/
2Fe1/2Zn, CaZn etc.), Ba3Z2Fe24O41(Z represents Co, Ni, Mg, Zn, Cu and its compounding ingredients).
Rare earth is exactly lanthanide series lanthanum (La) in the periodic table of chemical element, cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium
(Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutecium (Lu), with
And the elements scandium (Sc) closely related with 15 elements of group of the lanthanides and yttrium (Y) totally 17 kinds of elements, referred to as rare earth element.
Further, described magnetic devices are permanent magnet or electric magnet.
The coating of the acid sensor of the present invention is magnetic material coating, gold plate, chrome plating, quartz biography from top to bottom successively
Sensor chip, chrome plating and gold plate.When sensitive electrode contacts with acid, magnetic material coating will be from qcm sensor surface
Disappear.In terms of Sauerbrey equation, after magnetic material coating is etched, the frequency of QCM can improve.But when in QCM in addition
When one side electrode uses Magnet, because the deformation that the magnetic force between Magnet and magnetic material coating produces to QCM quartz wafer is remote
Much larger than the influence of crust deformation to QCM for the magnetic material quality of coating, when magnetic material coating is etched, frequency does not improve,
Can reduce on the contrary.Deformation QCM quartz transducer chip being produced due to the magnetic force between Magnet and magnetic material coating is much
More than the influence of crust deformation to QCM for the magnetic material quality of coating, this is because magnetic force is to the chip that quartz transducer chip produces
Deformation can lead to the deformation of bigger quartz transducer chip.When the distance of Magnet and magnetic material coating reduces, magnetic force meeting
Increase a lot, thus can increase the sensitivity of such sensor.When magnetic material coating is the iron-cobalt-nickel unit of acid labile
Element, iron cobalt nickel alloy, or other can with acid occur chemical reaction magnetic material when, here it is one is highly sensitive
QCM acid sensor.
Brief description
Fig. 1 is the structural representation of high sensitivity quality LOAD CELLS of the present invention；
Fig. 2 is the partial enlarged drawing of A in Fig. 1.
Fig. 3 is when not using magnetic devices, the change curve of frequency (Y-axis) (X-axis) in time；
When Fig. 4 is using magnetic devices, the change curve of frequency (Y-axis) (X-axis) in time；
In accompanying drawing, the list of parts representated by each label is as follows：
1st, sensor body, 2, quartz transducer chip, 3, magnetic devices, 4, chrome plating, 5, gold plate, 6, magnetic material
Coating.
Specific embodiment
Below in conjunction with accompanying drawing, the principle of the present invention and feature are described, example is served only for explaining the present invention, and
Non- for limiting the scope of the present invention.
A kind of highly sensitive acid sensor, as depicted in figs. 1 and 2, passes including packaged sensor body 1, quartz
Sensor chip 2, chrome plating 4, gold plate 5, magnetic devices 3 and magnetic material coating 6, the inside of described sensor 1 is provided with quartz
Oscillating circuit, two electrodes of described crystal oscillation circuit are separately positioned on the upper and lower surface of described quartz transducer chip 2, institute
State the top that quartz transducer chip 2 is arranged on described sensor 1, the upper and lower surface of described quartz transducer chip 2
It is coated with one layer of chrome plating 4 respectively, the surface of described chrome plating 4 is coated with one layer of gold plate 5, the inside of described sensor 1 also sets
Be magnetic device 3, and described magnetic devices 3 are located at the underface of described quartz transducer chip 2, and near described gold plate 5, institute
State the surface that magnetic material coating 6 is located at described quartz transducer chip 2, and be plated on described gold plate 5.
Described magnetic material coating 6 is by the magnetic organic substance that can react with acid of tool or inorganic substances system
Become.
Described inorganic substances are metal simple-substance or metal alloy.Described metal simple-substance is ferrum, cobalt or nickel.Described metal alloy
For ferroalloy, cobalt alloy or nickel alloy, such as AlNiCo.
Described magnetic devices 3 are permanent magnet or electric magnet.
The coating of the acid sensor of the present invention is magnetic material coating 6, gold plate 5, chrome plating 4, stone from top to bottom successively
English sensor wafer 2, chrome plating 4 and gold plate 5.When sensitive electrode contacts with acid, magnetic material coating 6 will pass from QCM
Sensor surfaces disappear.In terms of Sauerbrey equation, after magnetic material coating 6 is etched, the frequency of QCM can improve.But work as
When other one side electrode of QCM uses magnetic devices 3, because the magnetic force between magnetic devices 3 and magnetic material coating 6 is to QCM
The deformation that quartz wafer produces is far longer than the influence of crust deformation to QCM for magnetic material coating 6 mass, when magnetic material coating 6 quilt
When eating away, frequency does not improve, and can reduce on the contrary.Because the magnetic force between magnetic devices 3 and magnetic material coating 6 is to QCM
The deformation that quartz wafer produces is far longer than the influence of crust deformation to QCM for magnetic material coating 6 mass, this is because magnetic force is to quartz
The deformation of the chip that chip produces can lead to the deformation of bigger quartz wafer.When magnetic devices 3 and magnetic material coating 6 away from
From when reducing, magnetic force can increase a lot, thus can increase the sensitivity of such sensor.When magnetic material coating 6 is right
The iron-cobalt-nickel element of acid-sensitive, iron cobalt nickel alloy or other can occur with acid chemical reaction magnetic material when, here it is one
Individual highly sensitive QCM acid sensor.
When sensor runs into acid, the frequency of sensor will change over.Variation delta f of frequency is divided by the change of time
Change amount Δ t is proportional to the intensity of acid.As shown in figure 3, being shown that when not using magnetic devices 3, frequency (Y-axis) (X in time
Axle) change curve.
As shown in figure 4, A is Ph=4, B is Ph=5, and C is Ph=6, and when using magnetic devices 3, frequency (Y-axis) is at any time
Between (X-axis) change curve.Variation delta f of frequency is inversely proportional to sour intensity divided by variation delta t of time.
As the QCM using higher frequency, because high frequency QCM is thinner than low frequency QCM, identical magnetic material coating 6 He
Magnetic force between magnetic devices 3 can produce bigger deformation to thin QCM chip.With the same principle said above, work as magnetic
Device 3 and magnetic material coating 6 distance closer to when, magnetic force can produce bigger deformation and frequency change to chip.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.
Claims (6)
1. a kind of highly sensitive acid sensor it is characterised in that：Including packaged sensor body (1), quartz transducer
Chip (2), chrome plating (4), gold plate (5), magnetic devices (3) and magnetic material coating (6), described sensor body (1)
Inside is provided with crystal oscillation circuit, and two electrodes of described crystal oscillation circuit are separately positioned on described quartz transducer chip
(2) upper and lower surface, described quartz transducer chip (2) is arranged on the top of described sensor body (1), described quartz sense
The upper and lower surface of device chip (2) is coated with one layer of chrome plating (4) respectively, and the surface of described chrome plating (4) is coated with one layer
Gold plate (5), the inside of described sensor body (1) is additionally provided with magnetic devices (3), and described magnetic devices (3) are located at described stone
The underface of English sensor wafer (2), and near described gold plate (5), described magnetic material coating (6) is located at described quartz and passes
The surface of sensor chip (2), and be plated on described gold plate (5)；
Described magnetic material coating (6) is by the magnetic organo-metallic material that can react with acid of tool or inorganic substances system
Become.
2. according to claim 1 highly sensitive acid sensor it is characterised in that：Described organo-metallic material refer to containing
Stabilized radical simultaneously has the organic compound of ferromagnetic interaction or the complex containing transition metal.
3. according to claim 1 highly sensitive acid sensor it is characterised in that：Described inorganic substances be metal simple-substance or
Metal alloy.
4. according to claim 3 highly sensitive acid sensor it is characterised in that：Described metal simple-substance is ferrum, cobalt or nickel.
5. according to claim 3 highly sensitive acid sensor it is characterised in that：Described metal alloy is ferroalloy, cobalt
Alloy or nickel alloy.
6. according to any one of claim 1 to 5 highly sensitive acid sensor it is characterised in that：Described magnetic devices (3)
For permanent magnet or electric magnet.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361959787P | 2013-09-03 | 2013-09-03 | |
| US61/959,787 | 2013-09-03 |
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| Publication Number | Publication Date |
|---|---|
| CN104198323A CN104198323A (en) | 2014-12-10 |
| CN104198323B true CN104198323B (en) | 2017-02-15 |
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| CN108693335A (en) * | 2017-04-06 | 2018-10-23 | 北京至感传感器技术研究院有限公司 | Wind turbines lubricating oil on-line monitoring system |
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| CN105300827A (en) * | 2015-11-02 | 2016-02-03 | 北京至感传感器技术研究院有限公司 | Online detection device of acid value of liquid oil |
| CN105300863A (en) * | 2015-11-20 | 2016-02-03 | 北京至感传感器技术研究院有限公司 | Detection device and detection method for ferromagnetic abrasive grains in liquid oil |
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| CN1180251C (en) * | 2002-04-28 | 2004-12-15 | 武汉大学 | Method for testing ultratrace DNA by dual-amplifying technique and electrochemical quartz crystal microbalance |
| JP2007198920A (en) * | 2006-01-26 | 2007-08-09 | Ulvac Japan Ltd | Stirring unit |
| CN100520390C (en) * | 2006-11-29 | 2009-07-29 | 电子科技大学 | Piezocrystal gas sensor and method for making same |
| CN101865874B (en) * | 2010-06-11 | 2013-08-07 | 东华大学 | High-sensitivity biological sensor and preparation method thereof |
| GB201020939D0 (en) * | 2010-12-10 | 2011-01-26 | Cambridge Entpr Ltd | A sensing apparatus |
| CA2756621C (en) * | 2011-10-26 | 2020-07-14 | Michael Serpe | Gel assembly |
| CN103048210B (en) * | 2013-01-11 | 2014-09-10 | 东南大学 | Quartz crystal microbalance detecting device |
| CN203132941U (en) * | 2013-02-28 | 2013-08-14 | 长沙理工大学 | Chromium-based quartz crystal microbalance sensor |
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| CN108693335A (en) * | 2017-04-06 | 2018-10-23 | 北京至感传感器技术研究院有限公司 | Wind turbines lubricating oil on-line monitoring system |
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