CN104183503B - No coating palladium net alloy wire and its manufacture method - Google Patents
No coating palladium net alloy wire and its manufacture method Download PDFInfo
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- CN104183503B CN104183503B CN201310203920.9A CN201310203920A CN104183503B CN 104183503 B CN104183503 B CN 104183503B CN 201310203920 A CN201310203920 A CN 201310203920A CN 104183503 B CN104183503 B CN 104183503B
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- palladium
- alloy wire
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 180
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 84
- 239000011248 coating agent Substances 0.000 title claims abstract description 50
- 238000000576 coating method Methods 0.000 title claims abstract description 50
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 49
- 239000000956 alloy Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000004332 silver Substances 0.000 claims abstract description 44
- 229910052709 silver Inorganic materials 0.000 claims abstract description 43
- 239000013078 crystal Substances 0.000 claims abstract description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims 4
- 230000001681 protective effect Effects 0.000 abstract description 14
- 238000005204 segregation Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 4
- 241000272525 Anas platyrhynchos Species 0.000 abstract description 3
- 238000004416 surface enhanced Raman spectroscopy Methods 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 239000010946 fine silver Substances 0.000 description 11
- 229910001316 Ag alloy Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 230000008520 organization Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 4
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 229910001923 silver oxide Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45664—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
The present invention is related to one kind no coating palladium net alloy wire and its manufacture method.After this manufacture method is the palladium layers of 5nm 120nm on the silver-based line plated surface, it is heated to 600 800 DEG C of temperature, persistently this temperature is less than 4 hours, makes palladium complete thermal expansion in top layer be dissipated to silver-based line grain boundary network surface, is consequently formed the crystal boundary band containing palladium.This no coating palladium net alloy wire is prepared by said method, that is, is made up of with the crystal boundary band of grid containing palladium SERS substrate.Compare down with known silver system closing line, the no coating palladium net alloy wire of the present invention has preferably bulb hardness, cervical region intensity and blowout current density, with more splendid weatherability.The no coating palladium net alloy wire of the present invention can be directly applied in LED technique without protective gas; not only take into account Low ESR and known closing line can be avoided when implementing to use because of the duck hook caused by solidifying segregation; cervical region low intensity, or even the application problem such as the holding time is short.
Description
Technical field
The present invention is related to one kind no coating palladium net alloy wire and its manufacture method, refers in particular to a kind of no overlay coating
Silver or silver alloy packaging conductive wire, belong to the packaging conductive wire technical field in electronics industry.
Background technology
Low-resistivity is the basic demand of general electronic products packaging conductive wire, and the integrated electricity for working at high speed and high frequency
For the assembly of road (for example：High speed amplifier, oscillator, power management integrated circuit and high speed communication assembly etc.), in order to keep away
Exempt from signal delay (signal delaying) and cross-talk (cross talk interference), the resistivity to wire
Require more strict；Additionally, in order to ensure product is able to maintain that ordinary life is (weather-proof with function under long-time and critical conditions
Property), the consideration of reliability is also extremely important；Therefore, encapsulation industry is required to take into account Low ESR and the high routing trusted engages
Wire rod.
Packaging conductive wire common at present, has gold thread, copper cash, silver wire, alloy wire etc., and taking silver wire as a example, silver is in all materials
The minimum element of resistivity in material, right fine silver line routing on aluminum pad also can generate Jie's metallic compound of fragility when engaging
(Ag2Al or Ag4Al)；Additionally, fine silver line is easy to electrolytic ion transport phenomena (ion inside the encapsulating material containing aqueous vapor
Migration), that is, fine silver can hydrolyze dissolution silver ion via the function of current in aqueous compression ring border, then is reacted to not with oxygen
Stable silver oxide (AgO), this silver oxide thus deoxygenated effect (deoxidize) can be carried out and form silver atoms, and to positive pole
Become to grow the silver whiskers of leaf texture shape (leaf vein), eventually cause the short circuit of positive and negative electrode；Therefore, current fine silver line has no
Method provides balling-up and stability needed for industry；Therefore have alloy wire based on silver for the dealer (for example include copper, platinum, manganese,
The elements such as chromium, gold) as packaging conductive wire, but the wire rod being formed still cannot have the property of Low ESR and high-reliability concurrently.
Additionally, in order to solve the problems, such as that fine silver closing line also aoxidizes, having dealer to be set forth on its plated surface other metal-plated
Layer, to improve oxidizable and corrosion method, sees also Nippon Steel Materials Co., Ltd. and the day micro- metal stock of ferrum
A series of part company limited apllied relevant semiconductor devices TaiWan, China patent of invention of splice grafting line, announces the
" semiconductor device splice grafting disclosed by " semiconductor device splice grafting line " disclosed by I342809, bulletin I364806
Line ", bulletin I364806 disclosed by " quasiconductor joint wire ", disclose the 201107499th " quasiconductor copper alloy
Closing line ", disclose the 201140718th " quasiconductor copper closing line and its joint construction " and disclose the 201230903rd
" joint construction of plural layer copper closing line "；On the whole the bond wire configuration of above-mentioned front case is all (can be copper, gold, silver in a core
Constituted on metal) surface is provided with an epidermal area (can be palladium, ruthenium, rhodium, platinum, and silver constituted), lead to above-mentioned closing line in
Actual enforcement uses and often produces following shortcomings：A () has an epidermal area so that hardness is inclined because of its surface of wire rod of gold-plated genus
Height, and process current controls and be difficult, it is uneven to often result in thickness of coating, causes that encapsulation process entirety output capacity is poor, yield is low；
B () silver or silver alloy plate palladium layers when burning ball forming (electric frame off, EFO), the palladium layers because of surface make into
The centre of sphere hardness of ball (free air ball, FAB) is really up to the mark, causes the intensity of cervical region above soldered ball not enough, in routing (wire
Bonding, WB) after, often there is cervical region breakage problem, and then lead to the problem that joint interface is peeled off to occur；And palladium element is in weldering
Also segregation problems are had, this bulb histological difference big impact routing condition in ball.
Additionally, general routing engages wire rod while end melts and forms soldered ball, it is using an air delivery device constantly
Supply protective gas (such as nitrogen, argon or nitrogen and hydrogen mixture), to protect soldered ball to shape, nitrogen therein, argon can coat protection weldering
Ball avoids aoxidizing, and already oxidised part on the more reducible soldered ball of the hydrogen in nitrogen and hydrogen mixture, contribute to protecting the one-tenth of soldered ball
Type, finally, then the soldered ball being connected with bonding wire is engaged on crystal grain or the weld pad of carrier；However, the use of protective gas is not only
Increase manufacturing cost, and when protective gas controls improper, cause flow unstable or turbulent, can lead to soldered ball burn ball abnormal so that
Carry out the abnormal quality after routing technique, cause the problems such as electrical and boundary strength is not enough；And fine silver or silver alloy closing line in
In the environment of unprotect gas, do not have balling-up it is impossible to reach the prescription that LED encapsulates inductrial technology reliability.
Content of the invention
For solving above-mentioned technical problem, main purpose of the present invention is for providing one kind no coating palladium net alloy wire and its manufacturer
Method, refers in particular to a kind of silver of no overlay coating or silver alloy packaging conductive wire, and it does not only have preferably bulb hardness, cervical region intensity
And blowout current density, also can solve traditional silver wire and must add produced by protective gas and ask while forming soldered ball
Topic.
In order to achieve the above object, the present invention provides a kind of manufacture method of no coating palladium net alloy wire, and it is in a silver medal
Baseline surface plates 5nm-120nm（Thickness）Palladium layers after, be heated to 600-800 DEG C of temperature, persistently this temperature be less than 4 little
When, make the complete thermal expansion of palladium element be dissipated to silver-based line grain boundary network surface（Namely in silver-based line grain boundary network）, it is consequently formed and contain
Palladium crystal boundary band.
It is preferable that making the complete thermal expansion of palladium element be dissipated to the temperature on silver-based line grain boundary network surface in above-mentioned manufacture method
For 720 DEG C.
According to the specific embodiment of the present invention, it is preferable that the composition of described silver-based line can wrap in above-mentioned manufacture method
Gold element containing 1-5wt.%（On the basis of the gross weight of described silver-based line）；The more preferably gold element of 3wt.%.Thus, institute
The no coating palladium net alloy wire preparing can have more preferably bulb hardness and blowout current density.
The manufacture method of the no coating palladium net alloy wire that the present invention provides, it is 5nm- on a silver-based line plated surface
120nm（Thickness）Palladium layers after, be heated to 600-800 DEG C of temperature, persistently this temperature be less than 4 hours, make palladium element complete
Thermal expansion is dissipated to the formation band of crystal boundary containing palladium in silver-based line grain boundary network；Wherein, the temperature making the complete thermal diffusion of palladium element is preferably 720
℃；Compare down with known closing line, the present invention is due to, in the complete solid-state diffusion of palladium particle to silver-based line grain boundary network, can not only protect
There is low resistive, after burning ball, also there is less bulb hardness；After routing technique, can avoid breaking as tradition often betides cervical region
Split problem, and then lead to the problem that joint interface is peeled off to occur, and the electronics in wire can pass through palladium net crystal boundary and pass through
Silver-colored crystal grain directly transmits, thus has relatively low resistivity, compares non-fine silver line and has larger blowout current density；Meanwhile,
The no coating palladium net alloy wire of the present invention can avoid the oxidizable disappearance of traditional joint silver wire, and in air clean environment, it resists
Oxidisability also reaches more than 21 days；Furthermore, in the environment of unprotect gas, its experimental result confirms still no coating palladium net alloy wire
Have good balling-up, not only can reduce encapsulation manufacturing cost, and also need not take the flow-control of protective gas into account, reduce technique
On can affect the factor of quality.
The present invention also provides the manufacture method preparation-obtained no coating palladium net alloy of above-mentioned no coating palladium net alloy wire
Line.The no coating palladium net alloy wire of the present invention is made up of with the crystal boundary band of grid containing palladium SERS substrate.
The no coating palladium net alloy wire of the present invention not only can solve traditional silver wire and must add guarantor while forming soldered ball
Problem produced by shield gas and reduction wire metallurgy segregation, also have preferably blowout current density and anti-oxidation efficacy.
Brief description
Fig. 1 diffuses to silver-based line grain boundary network completely for palladium element after the no coating palladium net alloy wire heat treatment of embodiment 1
Interior microscope organization chartss.
Fig. 2 diffuses to silver-based line grain boundary network completely for palladium element after the no coating palladium net alloy wire heat treatment of embodiment 2
Interior microscope organization chartss.
Specific embodiment
Advantage in the purpose of the present invention and its structure function, will coordinate specific embodiment to be said according to the following drawings
Bright, to have to the present invention deeper into and specifically to understand.
First, the no coating palladium net alloy wire of the present invention is applied to the envelope of the electronics industry part of IC package, LED encapsulation etc.
Dress wire；After the manufacture method of its specific embodiment 1 is the palladium layers of 5nm-120nm thickness on the silver-based line plated surface, heating
To 600-800 DEG C of temperature, persistently this temperature at most 4 hours, the complete thermal expansion of palladium element is made to be dissipated in silver-based line grain boundary network, by
This forms the crystal boundary band containing palladium so that the no coating palladium net alloy wire of the present invention is by SERS substrate and the crystal boundary band of grid containing palladium institute group
Become, compare down with known silver system closing line, there is preferably bulb hardness, cervical region intensity and blowout current density, have more
Splendid weatherability；Refer to shown in Fig. 1, it is its complete thermal expansion of palladium element of no coating palladium net alloy wire of the embodiment of the present invention 1
It is dissipated to the microscope organization chartss in silver-based line grain boundary network；Wherein, preferred heating-up temperature is 720 DEG C；Refer to shown in table 1,
It is the palladium layers that thickness is respectively 5nm, 60nm, 120nm and 140nm on silver-based line (18 μm) plated surface, is heated to 720 DEG C
When, after continuing 30 points, 1 hour, 2 hours, 3 hours and 4 hours, in the experiment number of silver-based line surface measuring palladium layers residual thickness
According to；Should be clear from, thickness is the palladium layers of 5nm-120nm, continues 30 points for 720 DEG C after -4 hours in temperature, silver-colored baseline surface
Palladium layers diffused to completely in silver-based line grain boundary network, that is, the residual of surface no palladium layers.
Table 1
Additionally, the composition of the silver-based line of no coating palladium net alloy wire of the present invention can include the gold element of 1-5wt.%, more
Preferably include the gold element of 3wt.%；And this specific embodiment 2 on silver-based line plated surface thickness be respectively 5nm,
The palladium layers of 60nm, 120nm and 140nm, when being heated to 720 DEG C, continue 30 points, 1 hour, 2 hours, 3 hours and 4 hours
Afterwards, as shown in table 2 in the experimental data table of silver-based line surface measuring palladium layers thickness；Should be clear from, thickness is 5nm-120nm's
Palladium layers, continue 30 points after -4 hours in temperature, the palladium layers including the silver-colored baseline surface of 3wt.% gold element also will be complete for 720 DEG C
Perfect diffusion is to silver-based line grain boundary network, that is, the residual of surface no palladium layers, sees also shown in Fig. 2, and it is that the present invention is real
Its complete thermal expansion of palladium element of no coating palladium net alloy wire applying example 2 is dissipated to the microscope organization chartss in silver-based line grain boundary network.
Table 2
Then, by following conventional package closing lines and the no coating palladium net alloy wire of concrete practical embodiments 1 and 2
Relatively apply, can prove further the present invention technique can practical application scope, but be not intended to limit in any form this
Bright scope.Table 3 is constantly to supply protective gas (such as nitrogen, argon or nitrogen and hydrogen mixture) in environment, and its closing line is to protect
Soldered ball forms in the experimental data synopsis that end melting forms soldered ball；By in table 3 understand tool protective gas in the environment of shape
Become soldered ball, the balling-up of all samples all can be accepted (OK)；For the hardness of bulb, it is hard using vickers (Vicker)
The bulb hardness of degree machine measuring samples soldered ball, result shows the soldered ball that the no coating palladium net alloy wire of the present embodiment 1,2 is formed
Hardness all significantly smaller than non-fine silver line, its understandably, when coating containing palladium does not spread or does not diffuse to heart yearn base completely
During bottom, after burning ball forming is soldered ball, the palladium metal contained by soldered ball is built up mostly at cervical region, causes for the end of closing line
Palladium segregation, leads to cervical region to become the relative weakness of bond wire configuration intensity, and is easy to occur breakage problem herein；Review the present invention
The complete thermal expansion of plating palladium layers be dissipated in silver-based line grain boundary network, therefore centre of sphere hardness is significantly smaller, so that after routing technique, can keep away
Exempt from the cervical region fracture that tradition often occurs, and then lead to the problem that joint interface is peeled off to occur；Such as experimental result, the present embodiment 1,
The cervical region intensity of the soldered ball that 2 no coating palladium net alloy wire is formed is all significantly greater than other closing lines；It is noted that
This described cervical region intensity, its method of testing is that with a fixing device (such as one fine fixture), the cervical region of closing line is pressed from both sides tug,
And in the corresponding soldered ball of closing line the other end with a stretching device towards being stretched away from soldered ball direction, thus test closing line its
The yield strength of cervical region；Furthermore, because palladium particle diffuses in silver-based line grain boundary network completely, the electronics therefore in wire can lead to
Cross palladium net crystal boundary and transmitted by silver-colored crystal grain, there is relatively low resistivity, thus compare non-fine silver line, the no coating palladium of the present invention
Net alloy wire has larger blowout current density；It is noted that including the nothing made by silver-based line of 3wt.% gold element
Coating palladium net alloy wire has more preferably bulb hardness and blowout current density.
Table 3
Then, when unavailability protective gas in environment, table 4 shows that above-mentioned sample forms the experimental data comparison of soldered ball
Table；From in table 4, supplying the balling-up for fine silver line, Ag+Au+Pd alloy wire and plating palladium layers alloy for the protective gas it is
Have a significant impact, and the no coating palladium net alloy wire of the present invention, in the environment of unprotect gas, still have good balling-up,
That is, the present invention can be directly applied to LED technique without protective gas, not only take into account Low ESR and can avoid known closing line in
Because of the duck hook caused by solidifying segregation, the low application problem of cervical region intensity when implementing to use；Additionally, the present invention also has preferably
Oxidation resistance, all reaches the effect more than 21 days non-oxidations at room temperature, solve the problems, such as known in the closing line holding time short.
Table 4
| Sample (18 μm) | Balling-up | Storage time | Application LED encapsulation |
| Fine silver line | NG | 2 days | × |
| Ag+Au+Pd alloy wire | NG | 6 days | × |
| Plating palladium layers silver alloy wire | NG | 11 days | × |
| Embodiment 1 | OK | >21 days | OK |
| Embodiment 2 | OK | >21 days | OK |
Furthermore, refer to table 5, it is illustrate to be directed to above-mentioned sample in having routing balling-up under protective gas environment, and sees
Examine in 150 DEG C of temperature, under high temperature resistance storage (high temperature storage, HTS) test through 2000hrs, its sample
Jie's metal-oxide (intermetallic Compound, IMC) situation between product wiring and substrate；Can substantially learn, this
The IMC thickness of embodiment 1,2 is substantially relatively thin, and then strengthens interface peel intensity and soldered ball bond shear intensity, and has good
Joint reliability.
Table 5
From above-mentioned enforcement explanation, with prior art in comparison, the present invention has advantages below to the present invention：
1. the present invention is diffused to the palladium layers of silver-colored baseline surface in silver-based line grain boundary network completely by heat treatment, and known
Silver system closing line is compared down, and the no coating palladium net alloy wire of the present invention has preferably bulb hardness, cervical region intensity and fusing
Electric current density, not only takes into account Low ESR and known closing line can be avoided to often result in cervical region fracture when implementing and use, lead to engage
The problem of interface peel occurs.
2. the no coating palladium net alloy wire of the present invention, in the environment of unprotect gas, still has good balling-up, not only
Minimizing manufacturing cost, and also need not take the flow-control of protective gas into account, reduce the factor that quality can be affected on technique.
3. the no coating palladium net alloy wire of the present invention can be directly applied to LED technique without protective gas, not only takes into account low
Impedance and known closing line can be avoided when implementing to use because of the duck hook caused by solidifying segregation, cervical region low intensity, or even preserve
Time short grade application problem.
In sum, the no coating palladium net alloy wire of the present invention and its manufacture method, can pass through above-mentioned disclosed really
Embodiment, reaches desired use effect.
But, above-mentioned disclosed accompanying drawing and explanation, only the preferred embodiments of the present invention, the non-guarantor for limiting the present invention
Shield scope；Persons skilled in the art, its institute's diagnostic categories under this invention, the other equivalence changes made or modification, all
Should be regarded as the design category without departing from the present invention.
Claims (8)
1. a kind of manufacture method of no coating palladium net alloy wire, after it is the palladium layers of 5nm-120nm on the silver-based line plated surface,
It is heated to 600-800 DEG C of temperature, persistently this temperature is less than 4 hours, makes the complete thermal expansion of palladium element be dissipated to silver-based line crystal boundary net
Lattice surface, is consequently formed the crystal boundary band containing palladium.
2. the manufacture method of no coating palladium net alloy wire as claimed in claim 1, wherein, the composition of described silver-based line includes
The gold element of 1-5wt%.
3. the manufacture method of no coating palladium net alloy wire as claimed in claim 2, wherein, the composition of described silver-based line includes
The gold element of 3wt%.
4. the manufacture method of no coating palladium net alloy wire as claimed in claim 1, wherein, makes the complete thermal expansion of palladium element be dissipated to silver
The temperature on baseline grain boundary network surface is 720 DEG C.
5. a kind of no coating palladium net alloy wire of the manufacture method preparation by the no coating palladium net alloy wire described in claim 1.
6. a kind of no coating palladium net alloy wire of the manufacture method preparation by the no coating palladium net alloy wire described in claim 2.
7. a kind of no coating palladium net alloy wire of the manufacture method preparation by the no coating palladium net alloy wire described in claim 3.
8. a kind of no coating palladium net alloy wire of the manufacture method preparation by the no coating palladium net alloy wire described in claim 4.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925992A (en) * | 2009-03-17 | 2010-12-22 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| CN102912176A (en) * | 2012-09-21 | 2013-02-06 | 宁波康强电子股份有限公司 | High-end packaging silver alloy bonding wire and method for manufacturing same |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101925992A (en) * | 2009-03-17 | 2010-12-22 | 新日铁高新材料株式会社 | Bonding wire for semiconductor |
| CN102912176A (en) * | 2012-09-21 | 2013-02-06 | 宁波康强电子股份有限公司 | High-end packaging silver alloy bonding wire and method for manufacturing same |
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