CN104181738A - 一种像素单元、阵列基板、显示装置和像素驱动方法 - Google Patents
一种像素单元、阵列基板、显示装置和像素驱动方法 Download PDFInfo
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Abstract
本发明公开了一种像素单元,包括:像素电极、栅极、与栅极相连的栅极线、源极、与源极相连的数据线;还包括:与所述像素电极同层设置的第二电极、与所述像素电极相连的第一漏极以及与所述第二电极相连的第二漏极;所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触;其中,沿所述数据线的方向,所述第二电极的边缘平行于所述像素电极的边缘,且两者不接触。本发明还同时公开了一种阵列基板、像素驱动方法和显示装置,本发明可克服现有因减小黑矩阵宽度导致的像素单元边缘漏光的现象。
Description
技术领域
本发明涉及液晶显示技术领域,尤其涉及一种像素单元、阵列基板、显示装置和像素驱动方法。
背景技术
现有的像素单元平面结构如图1所示(图1中示出两个相邻的像素单元),每个像素中都包括:像素电极1、栅极2、与栅极2相连的栅极线7、源极3、与源极3相连的数据线7、以及与像素电极1相连的漏极4。通电后,漏极4对像素电极1进行充电,液晶分子5在电场的作用下发生偏转,此时像素单元边缘截面图如图2、3所示。现有技术中为增大液晶显示面板的透过率,会采用减小彩膜基板上黑矩阵11的宽度的方法来实现,结合图1至图3,图2为图1中所示像素单元左侧边缘的截面图,图3为图1中所示像素单元右侧边缘的截面图,如图2、3所示,若减小黑矩阵11的宽度,由于像素单元边缘电场线的不均匀,发生了弯曲,导致像素单元边缘分布的液晶分子取向与像素单元中部液晶分子的取向不一致,排列紊乱,从而造成像素单元边缘漏光,影响显示效果。因此,现有技术为了防止漏光现象的发生,如图2、3所示,所述黑矩阵11的边缘稍在垂直方向上对像素电极1的边缘有所覆盖。
这里,所述漏光现象发生在所述像素单元的长边侧,即图1中所示的像素单元的左右两侧,这是由于液晶分子5沿着像素单元的长边排列,从像素单元左右方向看的话,因为液晶分子在此方向的双折射率较小,所以容易漏光;而从像素单元上下(图1所示)方向看的话,因为液晶分子在此方向的双折射率较大,所以不容易漏光。
发明内容
有鉴于此,本发明的主要目的在于提供一种像素单元、阵列基板、显示装置和像素驱动方法,可克服现有因减小黑矩阵宽度导致的像素单元边缘漏光的现象。
为达到上述目的,本发明的技术方案是这样实现的:
本发明提供了一种像素单元,包括:像素电极、栅极、与栅极相连的栅极线、源极、与源极相连的数据线;所述像素单元还包括:与所述像素电极同层设置的第二电极、与所述像素电极相连的第一漏极以及与所述第二电极相连的第二漏极;所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触;
其中,沿所述数据线的方向,所述第二电极的边缘平行于所述像素电极的边缘,且两者不接触。
其中,所述第二电极设置于像素单元中设有数据线的一侧。
其中,所述第二电极与所述像素电极的厚度相同。
其中,所述第二电极与所述像素电极选用的材料相同。
优选的,所述第二电极与所述像素电极的间隔大于等于2um。
优选的,所述第二电极与相邻像素单元的像素电极的间隔大于等于2.5um。
其中,所述第二漏极的图案面积小于等于所述第一漏极的图案面积。
本发明还提供了一种阵列基板,所述阵列基板包括上文所述的像素单元。
本发明还提供了一种像素驱动方法,应用于上文所述的阵列基板,栅极进行扫描时,通过所述第一漏极对所述像素电极进行充电,通过所述第二漏极对所述第二电极进行充电。
本发明还提供了一种显示装置,所述显示装置包括上文所述的阵列基板。
本发明提供的像素单元、阵列基板、显示装置和像素驱动方法,所述像素单元,包括:像素电极、栅极、与栅极相连的栅极线、源极、与源极相连的数据线;还包括:与所述像素电极同层设置的第二电极、与所述像素电极相连的第一漏极以及与所述第二电极相连的第二漏极;所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触;其中,沿所述数据线的方向,所述第二电极的边缘平行于所述像素电极的边缘,且两者不接触。栅极进行扫描时,第一漏极对像素电极进行充电,第二漏极对第二电极进行充电,由于所述像素电极与第二电极接相同的电压,因此像素电极与第二电极边缘电场叠加后形成与像素电极中部相同规则的电场线,所以像素电极边缘位置的液晶分子在本发明所述电场的作用下有规则的排列,与像素单元中部液晶分子的取向相同,从而克服了现有因减小黑矩阵宽度导致的像素单元边缘漏光的现象。
附图说明
图1为现有像素单元的平面结构示意图;
图2为图1中所示像素单元左侧边缘的截面图;
图3为图1中所示像素单元右侧边缘的截面图;
图4为本发明实施例所述像素单元的平面结构示意图;
图5为图4中所示像素单元左侧边缘的截面图。
附图标记说明:
1像素电极;2栅极;3源极;4漏极;5液晶分子;6数据线;7、栅极线;8第二电极;9第一漏极;10第二漏极;11黑矩阵。
具体实施方式
本发明实施例的基本思想是:在像素单元中设置与像素电极同层的第二电极,并设置与像素电极相连的第一漏极以及与第二电极相连的第二漏极;所述第二电极与像素电极同层设置,所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触;沿所述数据线的方向,所述第二电极的边缘平行于所述像素电极的边缘,且两者不接触。
为了实现本发明实施例的目的、技术方案和优点更加清楚,下面将结合本发明实施例的附图,对本发明实施例的技术方案进行清楚、完整地描述。显然,所描述的实施例是本发明的一部分实施例,而不是全部的实施例。基于所描述的本发明的实施例,本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。
图4为本发明实施例所述像素单元的平面结构示意图,如图4所示,所述像素单元包括:像素电极1、栅极2、与栅极2相连的栅极线7、源极3、与源极3相连的数据线6;还包括:与像素电极1同层设置的第二电极8、与像素电极1相连的第一漏极9以及与第二电极8相连的第二漏极10,所述源极及漏极的上层设置有钝化层,钝化层上设置有两个过孔,所述像素电极1通过一个过孔与第一漏极9连接,所述第二电极8通过另一个过孔与第二漏极10连接;其中,所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触,减少相互干扰,因为第二漏极和data信号串扰很大,如果两个漏极相互连接了,就会影响像素电极的信号;沿所述数据线6的方向,所述第二电极8的边缘平行于所述像素电极1的边缘,且两者不接触。
这里,可令所述第二电极8的长度等于所述像素电极1的长度,第二电极的长度也可以不等于像素电极的长度,在此不作限定。所述第二电极8或像素电极1的长度是指第二电极8或像素电极1在平行于数据线6方向上的长度。
优选的,所述第二电极8设置于像素单元中设有数据线的一侧。
优选的,所述第二电极8与所述像素电极1的厚度相同;所述第二电极8与所述像素电极1选用的材料相同,如:透明导电材料:氧化铟锡(ITO)等。
图5为图4中所示像素单元左侧边缘的截面图,结合图4和图5,通电后,栅极进行扫描时,通过第一漏极9对像素电极1进行充电,通过第二漏极10对第二电极8进行充电,图5中,由于像素电极1与第二电极8同层设置,所述像素电极1与第二电极8边缘电场叠加后形成与像素电极1中部相同规则的电场线,所以像素电极1边缘位置的液晶分子5在本发明所述电场的作用下有规则的排列,与像素单元中部液晶分子5的取向相同。这样,设置在彩膜基板上的黑矩阵11可以设置较小的宽度,如图5所示,黑矩阵11的边缘在垂直方向上可不与像素电极1的边缘位置重合,从而克服了现有因减小黑矩阵宽度导致的像素单元边缘漏光的现象。
实际应用过程中,鉴于曝光设备曝光能力的限制,所述第二电极8与所述像素电极1的间隔大于等于2um,因为如果所述间隔再小的话,两电极可能会相互连接。另外,考虑串扰的问题,所述第二电极8与相邻像素单元的像素电极1的间隔大于等于2.5um。
优选的,如图4所示,为了不影响像素单元的开口率,所述第一漏极9以及第二漏极10设置的较小,所述第一漏极9的图案面积小于现有TFT中漏极的图案面积,所述第二漏极10的图案面积与所述第一漏极9的图案面积相当、或者小于第一漏极9的图案面积,这是因为第二电极8所需的充电时间小于像素电极1所需的充电时间。
本发明实施例还提供了一种阵列基板,所述阵列基板包括上文所述的像素单元,所述阵列基板包括多行多列像素单元形成的像素阵列。
本发明实施例还提供了一种像素驱动方法,应用于上文所述的阵列基板,栅极进行扫描时,通过所述第一漏极对所述像素电极进行充电,通过所述第二漏极对所述第二电极进行充电,所述像素电极与所述第二电极接相同的电压。
本发明实施例还提供了一种显示装置,所述显示装置包括上文所述的阵列基板。
以上所述,仅为本发明的较佳实施例而已,并非用于限定本发明的保护范围。
Claims (10)
1.一种像素单元,包括:像素电极、栅极、与栅极相连的栅极线、源极、与源极相连的数据线;其特征在于,所述像素单元还包括:与所述像素电极同层设置的第二电极、与所述像素电极相连的第一漏极以及与所述第二电极相连的第二漏极;所述第一漏极、所述第二漏极与所述源极之间设有沟道,且所述第一漏极与所述第二漏极不接触;
其中,沿所述数据线的方向,所述第二电极的边缘平行于所述像素电极的边缘,且两者不接触。
2.根据权利要求1所述的像素单元,其特征在于,所述第二电极设置于像素单元中设有数据线的一侧。
3.根据权利要求1或2所述的像素单元,其特征在于,所述第二电极与所述像素电极的厚度相同。
4.根据权利要求1或2所述的像素单元,其特征在于,所述第二电极与所述像素电极选用的材料相同。
5.根据权利要求1或2所述的像素单元,其特征在于,所述第二电极与所述像素电极的间隔大于等于2um。
6.根据权利要求1或2所述的像素单元,其特征在于,所述第二电极与相邻像素单元的像素电极的间隔大于等于2.5um。
7.根据权利要求1或2所述的像素单元,其特征在于,所述第二漏极的图案面积小于等于所述第一漏极的图案面积。
8.一种阵列基板,其特征在于,所述阵列基板包括权利要求1-7中任一项所述的像素单元。
9.一种像素驱动方法,其特征在于,应用于权利要求8所述的阵列基板,栅极进行扫描时,通过所述第一漏极对所述像素电极进行充电,通过所述第二漏极对所述第二电极进行充电。
10.一种显示装置,其特征在于,所述显示装置包括权利要求8所述的阵列基板。
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CN107153309A (zh) * | 2017-07-18 | 2017-09-12 | 深圳市华星光电技术有限公司 | 阵列基板、液晶面板及显示设备 |
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