CN104178034A - Germanium polishing liquid - Google Patents
Germanium polishing liquid Download PDFInfo
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- CN104178034A CN104178034A CN201310201406.1A CN201310201406A CN104178034A CN 104178034 A CN104178034 A CN 104178034A CN 201310201406 A CN201310201406 A CN 201310201406A CN 104178034 A CN104178034 A CN 104178034A
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- polishing fluid
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Abstract
The invention discloses a high-efficiency and stable-pH-value polishing liquid composition for a germanium wafer. The polishing liquid composition comprises the components by the weight percentage: 1%-60% of an abrasive material, 1%-8% of a pH stabilizer, 0.01%-2% of a surfactant, 0.001%-0.05% of a preservative agent, 0.01%-1% of a chelating agent, and the balance ultra-pure water. The polishing liquid composition is characterized in that a one-time-formed silica sol produced by Tianjin Ximei semiconductor materials Co., Ltd and having double-peak particle size is used as the abrasive material, and the high-efficiency pH stabilizer is added and can be stably control the pH value to have a floating range of less than 0.5 during a polishing process. The polishing liquid has less damage and high efficiency, and can simultaneously achieve combination of rough polishing and fine polishing; and the service life of the polishing liquid is greatly prolonged because of the stable pH value.
Description
Technical field
The present invention relates to a kind of polishing fluid composition for germanium wafer in chemically machinery polished (CMP) field.
Background technology
Along with the development of photovoltaic industry, the three-joint solar cell that germanium polished section is substrate because its optoelectronic transformation efficiency is high, radioprotective threshold value is higher and performance degradation is little than silion cell, by various countries, applied to more and more in the power supply of space.At present, the whole world, in the power supply of space, adopts and take the gallium arsenide solar cell that germanium wafer is substrate and surpass 80%.Compound solar cell needs the multilayer crystalline material of growing in epitaxy technique, and is heterojunction growth, easily produces lattice distortion.Therefore, compound solar cell has proposed comparatively harsh requirement to the surface quality of Ge monocrystalline polished section.CMP has improved the planeness on germanium wafer surface greatly as a kind of overall planarization being widely used.As the basis-polishing fluid of CMP technique, its quality has directly determined the surface quality of polishing object.
Patent about polishing fluid has much at present, but mostly from whole formula aspect, discuss, I find in real work, no matter the polishing fluid of which kind of formula, in polishing process, pH value all can occur, than declining largely, having had a strong impact on work-ing life and the polishing efficiency of polishing fluid.The patent 200610087601.6 of Tianjin Jingling Electronic Material Technology Co., Ltd has been announced a kind of germanium wafer polishing fluid, abrasive material, tensio-active agent, pH adjusting agent, sequestrant, deionized water, consists of.But its abrasive material is single, and polishing efficiency is lower, quality of finish need to improve, and does not mention the pH stability of polishing fluid in polishing process.
Summary of the invention
The object of the invention is to overcome the deficiency of the existing polishing fluid technology of preparing for germanium wafer, for germanium wafer polishing provides a kind of polishing fluid of efficient, pH value stabilization.
Technical scheme of the present invention:
A polishing fluid for germanium wafer, is characterized in that: bimodal abrasive material, autogamy pH stablizer, tensio-active agent, sequestrant, sanitas and high purity water, consist of.Each constituent mass degree is as follows: bimodal abrasive material 1%-60%, and pH stablizer 1%-8%, tensio-active agent 0.01%-2%, sanitas 0.001%-0.05%, surplus is high purity water.Polishing fluid pH value is 8-12, uses continuously 3h, its pH value variation range < 0.3.
Abrasive material of the present invention is self-produced once shaped bimodal particle size silicon sol, and wherein small particle size abrasive size scope is 40-60nm, the silicon sol that large particle diameter abrasive size scope is 120-150nm.
Abrasive material of the present invention accounts for whole polishing fluid mass percent (%) for 10-40.
In self-produced once shaped bimodal particle size silicon sol of the present invention, small particle size abrasive material is 2 with large particle diameter abrasive material quantity ratio: 3-4: 1.
The buffer system that autogamy pH stablizer of the present invention is comprised of mineral alkali, organic bases, weak acid and metal-salt, each composition quality ratio is, ammoniacal liquor: mineral alkali: (organic bases+salt of weak acid)=8: 1: (0.5-10), preferred organic bases: salt of weak acid=1: 1-5: 1.
Mineral alkali of the present invention is NaOH or KOH, and preferably organic bases is trolamine or hydroxyethylethylene diamine, and salt of weak acid is one or both in ammonium acetate, sodium-acetate or sodium acetate.
The said tensio-active agent of the present invention is Sodium dodecylbenzene sulfonate, and sequestrant is oxine, and sanitas is fenarimol.
The advantage of the polishing fluid that the present invention is prepared is to adopt bimodal particle size silicon sol, can realize the rough polishing of germanium wafer simultaneously and throw with essence, takes into account speed and surface finish.Simultaneously high pH value stabilization has been guaranteed pH variation range < 0.3 after continuous polishing 3h, has greatly extended the work-ing life of polishing fluid.
Embodiment
Embodiment 1:
Preparation germanium wafer polishing fluid, each composition weight percent is: 10% bimodal particle size silicon sol, 2% ammoniacal liquor, 0.25%NaOH, 0.5% hydroxyethylethylene diamine, 0.6% ammonium acetate, 0.05% Sodium dodecylbenzene sulfonate, 0.02%8-hydroxyquinoline, 0.008% fenarimol, surplus is high purity water.After being prepared, this polishing fluid carries out under the following conditions polishing experiments: 500g/cm
2, 40 ℃, under the condition of 5L/min to crystal orientation <111> germanium wafer continuous polishing 3h, average polished speed is 2.14 μ m/h, surface Ra < 0.2nm, detects a pH value every 30min in polishing process, records as follows:
Embodiment 2:
25% bimodal particle size silicon sol, 5% ammoniacal liquor, 0.6%NaOH, 3% hydroxyethylethylene diamine, 3% ammonium acetate, 0.03% Sodium dodecylbenzene sulfonate, 0.05%8-hydroxyquinoline, 0.01% fenarimol, surplus is water.After this polishing fluid is prepared, get 200ml reserved sample observing pH value and change, all the other carry out polishing experiments: 500g/cm under the following conditions
2, 40 ℃, under the condition of 3L/min to crystal orientation <111> germanium wafer continuous polishing 3h, average polished speed is 2.2 μ m/h, surface Ra < 0.2nm, detects a pH value every 30min in polishing process, records as follows:
Above specific embodiments of the invention are had been described in detail, but described content is only preferred embodiment of the present invention, can not be considered to for limiting practical range of the present invention.All equalization variations of doing according to the present patent application scope and improvement etc., within all should still belonging to patent covering scope of the present invention.
Claims (7)
1. a super large-scale integration germanium polishing fluid, is characterized in that it is abrasive material that this polishing fluid adopts self-produced once shaped bimodal particle size silicon sol, and adds the efficient pH stablizer of autogamy, and its moiety is as follows:
Bimodal abrasive material 1%-60%; PH stablizer 1%-8%
Tensio-active agent 0.01%-2%; Sanitas 0.001%-0.05%;
Sequestrant 0.01%-1%; Ultrapure water, surplus.
2. according to the said polishing fluid of claim 1, it is characterized in that abrasive material used is by self-produced once shaped bimodal particle size silicon sol, wherein small particle size scope is 40-60nm, and large particle size range is 120-150nm.
3. according to the said polishing fluid of claim 1, it is characterized in that in this self-produced once shaped bimodal particle size silicon sol, small particle size abrasive material is 2 with large particle diameter abrasive material mass percent: 1-5: 1.
4. according to the said polishing fluid of claim 1, it is characterized in that autogamy pH adjusting agent is by ammoniacal liquor, mineral alkali, organic bases and the salt of weak acid composite buffer system forming by a certain percentage, each composition quality ratio is, ammoniacal liquor: mineral alkali: (organic bases+salt of weak acid)=8: 1: (0.5-10), organic bases: salt of weak acid=1: 0.5-10: 1.
5. according to the said polishing fluid of claim 4, it is characterized in that described in this that mineral alkali is NaOH or KOH, organic bases is one or both in trolamine, hydroxyethylethylene diamine, Tetramethylammonium hydroxide, triethylamine, and salt of weak acid is one or both in ammonium acetate, sodium-acetate, sodium acetate or ammonium chloride.
6. according to the said polishing fluid of claim 1, it is characterized in that tensio-active agent is Sodium dodecylbenzene sulfonate, sequestrant is oxine, and sanitas is fenarimol.
7. according to the said polishing fluid of claim 1, it is characterized in that this polishing fluid pH value is for 8-12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310201406.1A CN104178034A (en) | 2013-05-27 | 2013-05-27 | Germanium polishing liquid |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310201406.1A CN104178034A (en) | 2013-05-27 | 2013-05-27 | Germanium polishing liquid |
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| Publication Number | Publication Date |
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| CN104178034A true CN104178034A (en) | 2014-12-03 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201310201406.1A Pending CN104178034A (en) | 2013-05-27 | 2013-05-27 | Germanium polishing liquid |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113146451A (en) * | 2021-03-26 | 2021-07-23 | 中锗科技有限公司 | Polishing method of 1 inch germanium processing piece |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101081965A (en) * | 2006-06-02 | 2007-12-05 | 天津晶岭电子材料科技有限公司 | Polishing liquid for germanium wafer and preparation method thereof |
| CN101768412A (en) * | 2008-12-31 | 2010-07-07 | 第一毛织株式会社 | CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method |
| US20100283133A1 (en) * | 2007-02-16 | 2010-11-11 | Yoshitaka Hamada | Film-forming composition, insulating film with low dielectric constant, formation method thereof, and semiconductor device |
-
2013
- 2013-05-27 CN CN201310201406.1A patent/CN104178034A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101081965A (en) * | 2006-06-02 | 2007-12-05 | 天津晶岭电子材料科技有限公司 | Polishing liquid for germanium wafer and preparation method thereof |
| US20100283133A1 (en) * | 2007-02-16 | 2010-11-11 | Yoshitaka Hamada | Film-forming composition, insulating film with low dielectric constant, formation method thereof, and semiconductor device |
| CN101768412A (en) * | 2008-12-31 | 2010-07-07 | 第一毛织株式会社 | CMP slurry composition for barrier polishing for manufacturing copper interconnects, polishing method using the composition, and semiconductor device manufactured by the method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113146451A (en) * | 2021-03-26 | 2021-07-23 | 中锗科技有限公司 | Polishing method of 1 inch germanium processing piece |
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Effective date of abandoning: 20170503 |
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