CN104167468A - Preparation method for improved crystalline silica solar energy battery back side structure - Google Patents
Preparation method for improved crystalline silica solar energy battery back side structure Download PDFInfo
- Publication number
- CN104167468A CN104167468A CN201410295737.0A CN201410295737A CN104167468A CN 104167468 A CN104167468 A CN 104167468A CN 201410295737 A CN201410295737 A CN 201410295737A CN 104167468 A CN104167468 A CN 104167468A
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- Prior art keywords
- layer
- sputtering
- depositing
- solar cell
- vacuum
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910002026 crystalline silica Inorganic materials 0.000 title abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 3
- 238000004544 sputter deposition Methods 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims abstract description 29
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 13
- 238000002207 thermal evaporation Methods 0.000 claims abstract description 7
- 238000005516 engineering process Methods 0.000 claims abstract description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 14
- 230000008021 deposition Effects 0.000 claims description 12
- 239000003344 environmental pollutant Substances 0.000 claims description 12
- 231100000719 pollutant Toxicity 0.000 claims description 12
- 230000035484 reaction time Effects 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000013077 target material Substances 0.000 claims description 12
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 238000001465 metallisation Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a preparation method for an improved crystalline silica solar energy battery back side structure, which uses a PVD (physical vapor deposition) metalized technology to form an staking layer structure consisting of a Al layer, an Ni:Si layer and an Ag layer on the back of the crystalline silica solar energy battery. The preparation method comprises steps of: (1) depositing the Al layer through vacuum thermal evaporation, (2) disposing the Ni:Si layer through the vacuum sputtering, and (3) disposing the Ag layer through the vacuum sputtering. The invention can ensure the flatness of the surface, and solve the problems of easy oxidization and high consumption of AL, can guarantee the weldability, particularly for the application of the Pb solder strip, and is more environmental-friendly.
Description
Technical field
The present invention relates to a kind of crystal-silicon solar cell preparation method, be specifically related to a kind of back of crystal silicon solar cell structure preparation method of improvement.
Background technology
At present, silk screen printing and the sintering of conventional crystal silicon solar cell comprise following steps: (1) local printing Ag/Al slurry, as back electrode, is dried; (2) silk screen printing Al slurry, as back of the body electric field, is dried; (3) silk screen printing front surface A g slurry is as positive electrode; (4) sintering forms contact.Above-mentioned steps (1), (2) relate to the formation of structure, there is following problem in this structure: most of region, the cell piece back side that (1) conventional method prepares is covered by Al slurry, it is local for the covering of Ag/Al slurry is as welding electrode, two regions are slightly overlapping, but can not form the structure of complete homogeneous; (2) the about 20-30 μ of the thickness m of silk screen printing Al slurry, Al slurry consumption is larger; (3) back of the body surface roughness that silk screen printing obtains is larger, easily oxidized.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of back of crystal silicon solar cell structure preparation method of improvement, can solve surface smoothness, the problem that oxidizable and Al consumption is high simultaneously, and can guarantee solderability, be particularly useful for the application without Pb welding, more environmental protection.
The technical scheme that technical solution problem of the present invention adopts is: a kind of back of crystal silicon solar cell structure preparation method of improvement, it is characterized in that: use PVD(physical vapour deposition (PVD)) metallization technology, at back of crystal silicon solar cell, form Al layer, Ni:Si layer and Ag layer laminate structure, concrete steps are as follows:
(1) vacuum thermal evaporation depositing Al layer: under vacuum condition, Si substrate is heated to 250～300 ℃, pass into the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～100Pa, sputtering power 20～500W, bombardment rafifinal target, reaction time 500～2500s, depositing Al layer, described Al layer thickness is 0.5～4.0 μ m;
(2) vacuum sputtering deposition Ni:Si layer: under vacuum condition, Si substrate after depositing Al layer is heated to 250～300 ℃, pass into the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～40Pa, sputtering power 30～300W, bombardment high purity nickel silicon alloy target, reaction time 30～800s, deposition Ni:Si layer, described Al:Si layer thickness is 50～500nm;
(3) vacuum sputtering deposition Ag layer: under vacuum condition, Si substrate after depositing Al layer and Ni:Si layer is heated to 250～300 ℃, pass into afterwards the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～50Pa, sputtering power 30～600W, bombardment high purity silver target, reaction time 5～500s, deposition Ag layer, described Ag layer thickness is 10～50nm.
As a kind of preferred, the vacuum degree under described vacuum condition is≤4 * 10
-4pa.
As a kind of preferred, in described step (2), the nickel content of high purity nickel silicon alloy target is 10～90%.
The invention has the beneficial effects as follows: at Si back of the body surface uniform vacuum thermal evaporation depositing Al layer, cover, can form the structure of complete homogeneous, be conducive to improve the open circuit voltage of solar cell, raising efficiency; Vacuum thermal evaporation depositing Al layer consumption is little, is about 1/10 of method for printing screen consumption; The Al/Ni:Si/Ag laminated construction surfacing that PVD method forms, is difficult for oxidized; Al/Ni:Si/Ag laminated construction is applicable to the application without Pb welding, meets environmental protection demand.
Accompanying drawing explanation
Fig. 1 is embodiment of the present invention back of solar cell structural representation.
Below in conjunction with accompanying drawing, the present invention will be further described.
Embodiment
Embodiment 1: a kind of back of crystal silicon solar cell structure preparation method of improvement, use PVD(physical vapour deposition (PVD)) metallization technology, and at back of crystal silicon solar cell, forming Al layer, Ni:Si layer and Ag layer laminate structure, concrete steps are as follows:
(1) vacuum thermal evaporation depositing Al layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate is heated to 250 ℃, passes into the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 100Pa, sputtering power 50W, bombardment rafifinal target, reaction time 2000s, deposit thickness is the Al layer of 3.0 μ m;
(2) vacuum sputtering deposition Ni:Si layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate after depositing Al layer is heated to 250 ℃, pass into the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 20Pa, sputtering power 80W, bombardment high purity nickel silicon alloy target (nickel content is 90%), reaction time 800s, the Ni:Si layer that deposit thickness is 200nm;
(3) vacuum sputtering deposition Ag layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate after depositing Al layer and Ni:Si layer is heated to 250 ℃, passes into afterwards the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 5Pa, sputtering power 200W, bombardment high purity silver target, reaction time 300s, the Ag layer that deposit thickness is 40nm.
Embodiment 2: the back of crystal silicon solar cell structure preparation method of another kind of improvement, use PVD(physical vapour deposition (PVD)) metallization technology, and at back of crystal silicon solar cell, forming Al layer, Ni:Si layer and Ag layer laminate structure, concrete steps are as follows:
(1) vacuum thermal evaporation depositing Al layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate is heated to 280 ℃, passes into the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 1Pa, sputtering power 100W, bombardment rafifinal target, reaction time 1800s, deposit thickness is the Al layer of 2.0 μ m;
(2) vacuum sputtering deposition Ni:Si layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate after depositing Al layer is heated to 280 ℃, pass into the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 1Pa, sputtering power 100W, bombardment high purity nickel silicon alloy target (nickel content is 90%), reaction time 300s, the Ni:Si layer that deposit thickness is 100nm;
(3) vacuum sputtering deposition Ag layer: (vacuum degree is 4 * 10 under vacuum condition
-4pa), Si substrate after depositing Al layer and Ni:Si layer is heated to 280 ℃, passes into afterwards the pollutant that Ar gas pre-sputtering 300s removes target material surface, then control reaction pressure 3Pa, sputtering power 200W, bombardment high purity silver target, reaction time 50s, the Ag layer that deposit thickness is 15nm.
Claims (3)
1. a back of crystal silicon solar cell structure preparation method for improvement, is characterized in that: use PVD metallization technology, at back of crystal silicon solar cell, form Al layer, Ni:Si layer and Ag layer laminate structure, concrete steps are as follows:
(1) vacuum thermal evaporation depositing Al layer: under vacuum condition, Si substrate is heated to 250～300 ℃, pass into the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～100Pa, sputtering power 20～500W, bombardment rafifinal target, reaction time 500～2500s, depositing Al layer, described Al layer thickness is 0.5～4.0 μ m;
(2) vacuum sputtering deposition Ni:Si layer: under vacuum condition, Si substrate after depositing Al layer is heated to 250～300 ℃, pass into the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～40Pa, sputtering power 30～300W, bombardment high purity nickel silicon alloy target, reaction time 30～800s, deposition Ni:Si layer, described Ni:Si layer thickness is 50～500nm;
(3) vacuum sputtering deposition Ag layer: under vacuum condition, Si substrate after depositing Al layer and Ni:Si layer is heated to 250～300 ℃, pass into afterwards the pollutant that Ar gas pre-sputtering 300～600s removes target material surface, then control reaction pressure 1～50Pa, sputtering power 30～600W, bombardment high purity silver target, reaction time 5～500s, deposition Ag layer, described Ag layer thickness is 10～50nm.
2. the back of crystal silicon solar cell structure preparation method of improvement as claimed in claim 1, is characterized in that: the vacuum degree under described vacuum condition is≤4 * 10
-4pa.
3. the back of crystal silicon solar cell structure preparation method of improvement as claimed in claim 1, is characterized in that: in described step (2), the nickel content of high purity nickel silicon alloy target is 10～90%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410295737.0A CN104167468A (en) | 2014-06-27 | 2014-06-27 | Preparation method for improved crystalline silica solar energy battery back side structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410295737.0A CN104167468A (en) | 2014-06-27 | 2014-06-27 | Preparation method for improved crystalline silica solar energy battery back side structure |
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| Publication Number | Publication Date |
|---|---|
| CN104167468A true CN104167468A (en) | 2014-11-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410295737.0A Pending CN104167468A (en) | 2014-06-27 | 2014-06-27 | Preparation method for improved crystalline silica solar energy battery back side structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN104167468A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104928625A (en) * | 2015-05-22 | 2015-09-23 | 沈阳富创精密设备有限公司 | Method for preparing high temperature creep resistant grounded substrate for semiconductor equipment through physical vapor deposition (PVD) |
| CN105552148A (en) * | 2016-02-05 | 2016-05-04 | 常州天合光能有限公司 | Laminated metal film for efficient solar cell, preparation method and solar cell |
| CN111969071A (en) * | 2020-08-25 | 2020-11-20 | 常州时创能源股份有限公司 | Metallization method and solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| CN101556977A (en) * | 2008-04-11 | 2009-10-14 | 福建钧石能源有限公司 | Film silicon photovoltaic device and manufacturing method, back electrode and photovoltaic component thereof |
-
2014
- 2014-06-27 CN CN201410295737.0A patent/CN104167468A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5118362A (en) * | 1990-09-24 | 1992-06-02 | Mobil Solar Energy Corporation | Electrical contacts and methods of manufacturing same |
| CN101556977A (en) * | 2008-04-11 | 2009-10-14 | 福建钧石能源有限公司 | Film silicon photovoltaic device and manufacturing method, back electrode and photovoltaic component thereof |
Non-Patent Citations (1)
| Title |
|---|
| VERENA JUNG ET AL.: "《Ni:Si as barrier material for a solderable PVD metallization of silicon solar cells》", 《ENERGY PROCEDIA》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104928625A (en) * | 2015-05-22 | 2015-09-23 | 沈阳富创精密设备有限公司 | Method for preparing high temperature creep resistant grounded substrate for semiconductor equipment through physical vapor deposition (PVD) |
| CN104928625B (en) * | 2015-05-22 | 2017-06-16 | 沈阳富创精密设备有限公司 | A kind of PVD prepares the method that semiconductor equipment high temperature creep-resisting is grounded substrate |
| CN105552148A (en) * | 2016-02-05 | 2016-05-04 | 常州天合光能有限公司 | Laminated metal film for efficient solar cell, preparation method and solar cell |
| CN111969071A (en) * | 2020-08-25 | 2020-11-20 | 常州时创能源股份有限公司 | Metallization method and solar cell |
| CN111969071B (en) * | 2020-08-25 | 2022-03-15 | 常州时创能源股份有限公司 | Metallization method and solar cell |
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Application publication date: 20141126 |