CN104166091A

CN104166091A - Non-linear photoconductive semiconductor switch testing device and method

Info

Publication number: CN104166091A
Application number: CN201410430777.1A
Authority: CN
Inventors: 王卫; 夏连胜; 谌怡; 刘毅; 张篁
Original assignee: Institute of Fluid Physics of CAEP
Current assignee: Institute of Fluid Physics of CAEP
Priority date: 2014-08-28
Filing date: 2014-08-28
Publication date: 2014-11-26
Anticipated expiration: 2034-08-28
Also published as: CN104166091B

Abstract

The invention relates to the field of non-linear photoconductive semiconductor switch parameter testing, in particular to a non-linear photoconductive semiconductor switch testing device and method. The non-linear photoconductive semiconductor switch testing device and method are provided for solving the problems existing in the prior art. Through cooperation of a delay synchronous machine, a laser, an optical fiber, a photoelectric probe, a first high-voltage probe and the like, the difficulty of conducting accurate testing on a non-linear photoconductive semiconductor switch on the high-voltage, high-current and ultrafast-pulse conditions is overcome, and accurate, convenient and reliable testing of the parameters such as the conduction delay time, jittering, the conduction resistance, the withstand voltage and the service life of the non-linear photoconductive semiconductor switch is realized. The device comprises the delay synchronous machine, the laser, the optical fiber, the photoelectric probe, high-voltage probes, an oscilloscope, a high-voltage pulse power source, Blumlein transmission wires, a matching load, an organic glass box, transformer insulating oil and limiting fixtures. The non-linear photoconductive semiconductor switch to be tested, the Blumlein transmission wires and the matching load are placed in the organic glass box and are immersed in the transformer insulating oil.

Description

A kind of Nonlinear photoconductive switch proving installation and method

Technical field

The present invention relates to Nonlinear photoconductive switch parameter testing field, especially relate to a kind of Nonlinear photoconductive switch proving installation and method.

Background technology

Photoconductive switch (Photoconductive Semiconductor Switches-PCSS) is to utilize pulse laser excitation photoconduction semiconductor to realize a kind of novel solid switch of impedance state conversion.Since 1972, the Jayaraman of Maryland university and Lee find first semiconductor material to the response time of psec light pulse effect can be in the scope of psec since, the characteristic research of photoconductive switch has just caused various countries scientists' great attention.Because photoconductive switch has the advantages such as conducting speed is fast, synchronization accuracy is high, triggering shake is little, it has good application prospect in various fields such as medical dielectric-wall accelerator, High-Power Microwave, ultrashort ultra-fast electrical pulse, spark photographs.

The mode of operation of photoconductive switch is divided into two kinds of linear model and nonlinear models, wherein, the bias field intensity of photoconductive switch and triggering luminous energy all reach after certain threshold value, and photoconductive switch just can be operated in nonlinear model, and this mode of operation is also the focus of current this area research.Due under nonlinear model, that photoconductive switch two interpolar bias voltages reach is tens of kilovolt, switch conduction electric current reaches hundreds of amperes, power reaches tens of megawatts, if therefore will test the performance of Nonlinear photoconductive switch, proving installation is had to higher requirement.

At present, domestic Nonlinear photoconductive switch production technology is also immature, cause switch expensive on the one hand, also make on the other hand switch quality uneven, and lack unified pick-up unit, in the urgent need to a set of accurate, convenient, reliable pick-up unit, the quality of Nonlinear photoconductive switch is controlled.

Summary of the invention

Technical matters to be solved by this invention is: the problem existing for prior art, provides a kind of Nonlinear photoconductive switch proving installation and method.By cooperations such as delay synchronizer, laser instrument, optical fiber, photoelectric probe, high-voltage probe, oscillograph, high-voltage pulse power source, Blumlein transmission line, matched loads, overcome under the condition of high pressure, large electric current, ultrafast pulse Nonlinear photoconductive switch is carried out to the accurately difficulty of test, realize the parameter testings such as Nonlinear photoconductive switch turn on delay time, shake, conducting resistance, withstand voltage and life-span accurately, convenient, reliable, guarantee the Performance and quality of Nonlinear photoconductive switch.Specifically, by when high-voltage pulse power source output high-voltage signal, Blumlein transmission line is charged; After Nonlinear photoconductive switch to be measured has charged, when laser instrument generation laser signal makes Nonlinear photoconductive switch conducting to be measured through Optical Fiber Transmission to Nonlinear photoconductive switch to be measured surface, between two argent electrodes of Blumlein transmission line, produce a potential pulse, this potential pulse propagates into a series of test processs such as matched load along Blumlein transmission line and obtains Nonlinear photoconductive switch to be measured logical time delay, shake, conducting resistance technical indicator, comparatively accurately holds the parameter characteristic of Nonlinear photoconductive switch to be measured; By improving gradually the output voltage of high-voltage pulse power source, improve gradually the charging voltage of Blumlein transmission line, until Nonlinear photoconductive switch generation self breakdown to be measured, in Nonlinear photoconductive switch generation self breakdown previous moment to be measured, on the Blumlein transmission line that oscillograph measures by the first high-voltage probe, the amplitude of high-voltage signal is the withstand voltage of Nonlinear photoconductive switch to be measured; At Nonlinear photoconductive switch to be measured, be operated under required satisfied technical indicator condition, allow Nonlinear photoconductive switch continuous firing to be measured, until Nonlinear photoconductive switch to be measured cannot normally be worked, record the work times of Nonlinear photoconductive switch to be measured, be the life-span of photoconductive switch to be measured.

The technical solution used in the present invention is as follows:

A Nonlinear photoconductive switch proving installation, comprises delay synchronizer, laser instrument, photoelectric probe, high-voltage probe, oscillograph, high-voltage pulse power source, Blumlein transmission line, matched load, the first high-voltage probe, the second high-voltage probe, organic glass box, organic glass base, transformer insulation oil, limit clamp;

Blumlein transmission line, comprise the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, the upper and lower overlapping organic glass base upper surface that is placed in of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp; Described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode are in abutting connection with also conducting, the second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency; The first glass ceramics Plate-Transmission-Line one end face argent electrode or the second glass ceramics Plate-Transmission-Line one end face argent electrode, for when high-voltage pulse power source is exported high-voltage signal, charge to Blumlein transmission line; After Blumlein transmission line has charged, when laser instrument is irradiated to Nonlinear photoconductive switch to be measured surface and makes Nonlinear photoconductive switch conducting to be measured by producing laser signal after Optical Fiber Transmission, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, the potential pulse that Blumlein transmission line produces;

Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw;

Delay synchronizer, for being taken up in order of priority to high-voltage pulse power source, laser instrument trigger pip; Trigger high-voltage pulse power source output high-voltage signal, trigger laser instrument and produce laser signal;

Matched load, the potential pulse producing for receiving Blumlein transmission line, and by the second high-voltage probe test voltage pulse signal; Described matched load is arranged between the first glass ceramics Plate-Transmission-Line other end argent electrode and the second glass ceramics Plate-Transmission-Line other end argent electrode;

Photoelectric probe, the reflected light that the pulsed laser irradiation producing for oscillograph detecting laser produces when surperficial to Nonlinear photoconductive switch to be measured, and this reflected light signal is converted to electric signal transmission to oscillograph, described oscillograph obtains pulsed laser irradiation to the moment on Nonlinear photoconductive switch to be measured surface , wherein, if arrive the oscillographic moment for photoelectric probe detecting laser produces laser signal, for photoelectric probe is to oscillograph connecting line length, for electromagnetic wave velocity of propagation in wire, it is known quantity;

Oscillograph, for surveying Blumlein transmission line charging voltage signal by the first high-voltage probe, producing laser signal and for surveying the voltage pulse waveforms on matched load by the second high-voltage probe, can obtain each waveform signal and arrive the oscillographic moment and amplitude for passing through photoelectric probe detecting laser; Wherein oscillograph is surveyed Blumlein transmission line charging voltage waveform by the first high-voltage probe, and this waveform signal is transferred to oscillograph, obtains high-voltage pulse power source output high-voltage signal magnitude of voltage on Blumlein transmission line on oscillograph ; Oscillograph is surveyed the potential pulse obtaining on matched load by the second high-voltage probe, and this voltage pulse signal is transferred to oscillograph, obtains output voltage values on matched load on oscillograph , obtain the moment that obtains output voltage pulse on matched load simultaneously , wherein, for voltage pulse signal arrives the oscillographic moment, be that the second high-voltage probe is to oscillograph connecting line length; The turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, being the electricity time span of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer; for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, being the characteristic impedance of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; Wherein Blumlein transmission line charging voltage is the high-voltage signal of high-voltage pulse power source output;

In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open, organic glass base bottom has been positioned over organic glass box bottom.

Nonlinear photoconductive switch proving installation comprises high-voltage pulse power source, oscillograph, Blumlein transmission line, the first high-voltage probe, matched load, organic glass box, a transformer insulation oil, limit clamp;

Blumlein transmission line, comprise the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp; Described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode are in abutting connection with also conducting, the second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency;

High-voltage pulse power source improves the high tension voltage of output gradually, until Nonlinear photoconductive switch generation self breakdown to be measured, in Nonlinear photoconductive switch generation self breakdown previous moment to be measured, on the Blumlein transmission line that oscillograph measures by the first high-voltage probe, the amplitude of high-voltage signal is the withstand voltage of Nonlinear photoconductive switch to be measured; At Nonlinear photoconductive switch to be measured, be operated under required satisfied technical indicator condition, allow Nonlinear photoconductive switch continuous firing to be measured, until Nonlinear photoconductive switch to be measured cannot normally be worked, record the work times of Nonlinear photoconductive switch to be measured, be the life-span of Nonlinear photoconductive switch to be measured;

In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open, organic glass base bottom is positioned over organic glass box bottom.

Further, described Blumlein transmission line comprises the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp, described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode adjacency, described Nonlinear photoconductive switch negative electrode to be measured is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode one side, the second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency, described matched load is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode, between the second glass ceramics Plate-Transmission-Line other end argent electrode.

Further, the making material of described organic glass base and limit clamp is organic glass, described limit clamp is arranged on Blumlein transmission line both sides, limit clamp both sides are fixed on Blumlein transmission line on organic glass base by the second screw, the 3rd screw, and wherein limit clamp makes the first glass ceramics Plate-Transmission-Line one end face argent electrode and the seamless adjacency of the second glass ceramics Plate-Transmission-Line one end face argent electrode; Described Nonlinear photoconductive switch to be measured is arranged on the first glass ceramics Plate-Transmission-Line other end argent electrode one side, and described Nonlinear photoconductive switch to be measured is fixed on limit clamp by the first screw; Be fixed on limit clamp by the 4th screw with matched load one end that the first glass ceramics Plate-Transmission-Line other end argent electrode is connected.

Further, described Nonlinear photoconductive switch to be measured is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; Matched load is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; The width of described silver foil is identical with argent electrode width; Described the first screw, the second screw, the 3rd screw, the 4th tip of screw roughness maximal value be 3.2 μ m, maximal value is 12.5 μ m; The connecting line of described high-voltage pulse power source and Nonlinear photoconductive switch to be measured, the described connecting line in nearly Nonlinear photoconductive switch to be measured one end adopts laciniation; The impedance matching of the impedance of described matched load and Blumlein transmission line, is the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line characteristic impedance 2 times.

A kind of Nonlinear photoconductive switch method of testing comprises:

Step 1:Blumlein transmission line comprises the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp, and described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode are in abutting connection with also conducting; The second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency;

Step 2: Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw; In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open; Organic glass base bottom is positioned over organic glass box bottom;

Step 3: be taken up in order of priority to high-voltage pulse power source, laser instrument trigger pip by delay synchronizer; And trigger high-voltage pulse power source output high-voltage signal, trigger laser instrument and produce laser signal;

Step: 4: when high-voltage pulse power source output high-voltage signal, Blumlein transmission line is charged, oscillograph is surveyed Blumlein transmission line charging voltage by the first high-voltage probe, obtains Blumlein transmission line charging voltage value on oscillograph ; Blumlein transmission line charging voltage is the high-voltage signal of high-voltage pulse power source output;

Step 5: after the high-voltage signal of high-voltage pulse output has charged to Nonlinear photoconductive switch to be measured, laser instrument produces laser signal and after Optical Fiber Transmission, is irradiated to Nonlinear photoconductive switch to be measured surface, the reflected light producing while being irradiated to Nonlinear photoconductive switch to be measured surface with photoelectric probe exploring laser light signal, and this reflected light signal is converted to electric signal transmission to oscillograph, by oscillograph, obtain the moment that laser signal is irradiated to Nonlinear photoconductive switch to be measured surface , wherein, the laser signal recording for photoelectric probe arrives the oscillographic moment, for photoelectric probe is to oscillograph connecting line length, for electromagnetic wave velocity of propagation in wire, it is known quantity.

Step 6: when laser signal makes Nonlinear photoconductive switch conducting to be measured, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, then oscillograph detects the potential pulse obtaining on matched load by the second high-voltage probe, and oscillograph is transferred to the moment of matched load by obtaining voltage pulse signal , wherein, for this voltage pulse signal arrives the oscillographic moment, be that the second high-voltage probe is to oscillograph connecting line length; On oscillograph, obtain output voltage values u on matched load simultaneously _o; The turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, being the electricity time span of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer, for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, being the characteristic impedance of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity;

A kind of Nonlinear photoconductive switch method of testing comprises:

Step 2: Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw; In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open, organic glass base bottom is positioned over organic glass box bottom

Step 3: high-voltage pulse power source improves the high tension voltage of output gradually, until Nonlinear photoconductive switch generation self breakdown to be measured, in Nonlinear photoconductive switch generation self breakdown previous moment to be measured, on the Blumlein transmission line that oscillograph measures by the first high-voltage probe, the amplitude of high-voltage signal is the withstand voltage of Nonlinear photoconductive switch to be measured; At Nonlinear photoconductive switch to be measured, be operated under required satisfied technical indicator condition, allow Nonlinear photoconductive switch continuous firing to be measured, until Nonlinear photoconductive switch to be measured cannot normally be worked, record the work times of Nonlinear photoconductive switch to be measured, be the life-span of Nonlinear photoconductive switch to be measured; Wherein Blumlein transmission line charging voltage is the high-voltage signal of high-voltage pulse power source output.

In sum, owing to having adopted technique scheme, the invention has the beneficial effects as follows:

1, utilize two equal glass ceramics Plate-Transmission-Lines of characteristic impedance to form Blumlein transmission line, according to the required satisfied technical indicator of Nonlinear photoconductive switch to be measured, it is the charging of Blumlein transmission line, after to be charged completing, pulse laser is irradiated to Nonlinear photoconductive switch to be measured surface after Optical Fiber Transmission, make Nonlinear photoconductive switch conducting to be measured, between two argent electrodes of the first flat ceramic transmission line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, the impedance matching of the impedance of matched load and Blumlein transmission line, prevented the reflection of pulse, on matched load, obtain output waveform.

2, the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line that utilize two characteristic impedances to equate have formed Blumlein transmission line, the impedance matching of the impedance of matched load and Blumlein transmission line, be the first glass ceramics board transmission line or the second glass ceramics Plate-Transmission-Line characteristic impedance 2 times, prevented the reflection of pulse.

3, utilize respectively Nonlinear photoconductive switch gib screw 18 to be measured and matched load gib screw 21 that Nonlinear photoconductive switch to be measured and matched load are fixed on glass ceramics Plate-Transmission-Line 8, the end of two gib screws all will polish smooth with fine sandpaper (tip of screw roughness maximal value be 3.2 μ m, maximal value is 12.5 μ m), prevent from causing point discharge in hyperbaric environment.

When 4, Nonlinear photoconductive switch to be measured is connected with argent electrode with matched load, connecting lead wire all adopts silver foil, and the width of silver foil is identical with the width of argent electrode 9, its objective is contact resistance when reducing connecting lead wire is connected with argent electrode 9.

5, the described connecting line in nearly Nonlinear photoconductive switch to be measured one end adopts laciniation, its reason is because Nonlinear photoconductive switch thickness of electrode to be measured is only hundred nanometer scale conventionally, laciniation can guarantee connecting lead wire be connected with Nonlinear photoconductive switch electrode to be measured good in, avoid the stress of connecting lead wire generation when welding that the electrode of Nonlinear photoconductive switch to be measured is come off.

6, the making material of organic glass base 11 and limit clamp 17 is organic glass, its objective is under high pressure insulation, meanwhile, and the convenient state of observing Nonlinear photoconductive switch to be measured in test process of transparent organic glass.

7, the effect of limit clamp 17 is the Blumlein transmission line being comprised of two glass ceramics Plate-Transmission-Lines 8 to be fixed on organic glass base 11.

8, whole proving installation is all immersed in transformer insulation oil, has improved the insulating capacity of Nonlinear photoconductive switch to be measured and other devices, has avoided because the phenomenons such as dielectric surface flashover have a negative impact to switch the performance test results.

9, package unit is simple in structure, easy to operate, reliable and stable, is easy to safeguard;

10, according to the required satisfied technical indicator of Nonlinear photoconductive switch to be measured, select amplitude and the waveform of charging voltage, improved the applicability of proving installation;

11, by device, undertaken in test process, Nonlinear photoconductive switch to be measured is all the time in transformer insulation oil sealing state, improved the voltage endurance capability of Nonlinear photoconductive switch to be measured, avoided because the phenomenons such as dielectric surface flashover have a negative impact to switch the performance test results;

12, whole proving installation volume is little, lightweight, movability and portable strong.

13, the common structure of Nonlinear photoconductive switch to be measured comprises three kinds of coplanar structure, antarafacial structure and body structures, all can utilize the present invention to test.

Accompanying drawing explanation

Examples of the present invention will be described by way of reference to the accompanying drawings, wherein:

Fig. 1 is test philosophy figure of the present invention.

Fig. 2 is proving installation structural representation of the present invention.

Fig. 3 a is one of three kinds of common structures of photoconductive switch (antarafacial structures).

Fig. 3 b is one of three kinds of common structures of photoconductive switch (coplanar structures).

Fig. 3 c is one of three kinds of common structures of photoconductive switch (body structures).

Fig. 4 is limit clamp sectional view.

In figure, 1, delay synchronizer, 2, high-voltage pulse power source, 3, laser instrument, 4, optical fiber, 5, photoelectric probe, 6, pulse laser, 7, Nonlinear photoconductive switch to be measured, 8, glass ceramics Plate-Transmission-Line, 9, the argent electrode that flat ceramic transmission line two sides distributes, 10, matched load, 11, organic glass base, 12, the first high-voltage probe, 13, the second high-voltage probe, 14, oscillograph, 15, organic glass box, 16, transformer insulation oil, 17, limit clamp, 18, the first screw, 19, the second screw, 20, the 3rd screw, 21, the 4th screw, 22, photoconduction semiconductor, 23, Nonlinear photoconductive switch electrode to be measured.

Embodiment

Disclosed all features in this instructions, or the step in disclosed all methods or process, except mutually exclusive feature and/or step, all can combine by any way.

Disclosed arbitrary feature in this instructions (comprising any accessory claim, summary and accompanying drawing), unless narration especially all can be replaced by other equivalences or the alternative features with similar object.That is,, unless narration especially, each feature is an example in a series of equivalences or similar characteristics.

Related description of the present invention:

1, argent electrode refers to the argent electrode of the first glass ceramics Plate-Transmission-Line, two end faces of the second glass ceramics Plate-Transmission-Line.One end face argent electrode refers to the argent electrode on the first glass ceramics Plate-Transmission-Line and adjacent that end face of the second glass ceramics Plate-Transmission-Line.Other end silver electrode refers to the silver electrode on the first glass ceramics Plate-Transmission-Line and non-conterminous that end face of the second glass ceramics Plate-Transmission-Line.Glass ceramics Plate-Transmission-Line refers to the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line.The first glass ceramics Plate-Transmission-Line is the glass ceramics Plate-Transmission-Line that specification is identical with the second glass ceramics Plate-Transmission-Line.Two end faces of described glass ceramics Plate-Transmission-Line are all that argent electrode, glass ceramics Plate-Transmission-Line middle layer are glass ceramics, wherein argent electrode is fabricated into by silk-screen printing technique in the glass ceramics both ends of the surface in middle layer, forms an end face argent electrode and other end argent electrode.

2, matched load is resistance. integral body is an implication.

3, every key technical index of Nonlinear photoconductive switch to be measured, comprising: turn on delay time, shake, conducting resistance, withstand voltage and life-span.The turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, being the electricity time span of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer, for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, being the characteristic impedance of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; Under the condition of input pulse laser 6 not, improve gradually the output voltage of high-voltage pulse power source, improve gradually the charging voltage of Blumlein transmission line, until Nonlinear photoconductive switch generation self breakdown to be measured, in Nonlinear photoconductive switch generation self breakdown previous moment to be measured, on the Blumlein transmission line that oscillograph measures by the first high-voltage probe, the amplitude of high-voltage signal is the withstand voltage of Nonlinear photoconductive switch to be measured; At Nonlinear photoconductive switch to be measured, be operated under required satisfied technical indicator condition, allow Nonlinear photoconductive switch continuous firing to be measured, until Nonlinear photoconductive switch to be measured cannot normally be worked, record the work times of Nonlinear photoconductive switch to be measured, be the life-span of Nonlinear photoconductive switch to be measured.

4, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, refer between the first glass ceramics Plate-Transmission-Line one end face argent electrode and the first glass ceramics Plate-Transmission-Line other end silver electrode.

5, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, the potential pulse that Blumlein transmission line produces.Concrete production process: please refer to < < pulse power basis > >, author: Han Min, publishing house of Tsing-Hua University, the related content of chapter 3 the 5th joint Blumlein transmission line.

6, on Blumlein transmission line, high-voltage signal refers to the high-voltage signal that high-voltage pulse power source is exported.

Embodiment mono-: the turn on delay time of testing Nonlinear photoconductive switch to be measured , Nonlinear photoconductive switch to be measured shake and the conducting resistance of Nonlinear photoconductive switch to be measured etc. parameter, be to be undertaken by Nonlinear photoconductive switch proving installation to be measured.

7, the first high-voltage probe output terminal is connected with oscillograph the second port, the first two of high-voltage probes input end connects (this argent electrode grounding is connected with high-voltage pulse power source earth terminal simultaneously) with the first glass ceramics Plate-Transmission-Line one end face argent electrode (being connected with high-voltage pulse power source is anodal), other end argent electrode respectively.The second high-voltage probe output terminal is connected with oscillograph the 3rd port, and the second two of high-voltage probes input end connects respectively at matched load two ends.Oscillograph be have three road input ports at least oscillograph wherein oscillograph first via input test port be oscillograph the first port; Oscillograph the second tunnel input test port is oscillograph the second port; Oscillograph Third Road input test port is oscillograph the 3rd port.

Wherein Nonlinear photoconductive switch proving installation to be measured comprises delay synchronizer, laser instrument, optical fiber, photoelectric probe, the first high-voltage probe, the second high-voltage probe, oscillograph, high-voltage pulse power source, Blumlein transmission line, matched load, organic glass box, transformer insulation oil, limit clamp; Blumlein transmission line, comprise the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp; Described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode are in abutting connection with also conducting, the first glass ceramics Plate-Transmission-Line one end face argent electrode or the second glass ceramics Plate-Transmission-Line one end face argent electrode, for when high-voltage pulse power source is exported high-voltage signal, charge to Blumlein transmission line; After Blumlein transmission line has charged, when laser instrument is irradiated to Nonlinear photoconductive switch surface to be measured (away from that end face of Blumlein transmission line) and makes Nonlinear photoconductive switch conducting to be measured by producing laser signal after Optical Fiber Transmission, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, the potential pulse that Blumlein transmission line produces;

Delay synchronizer, for being taken up in order of priority to high-voltage pulse power source, laser instrument trigger pip; Trigger high-voltage pulse power source output high-voltage signal, trigger laser instrument and produce laser signal; Two output terminals of delay synchronizer are connected with high-voltage pulse power source, laser instrument respectively; High-voltage pulse power source is anodal to be connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and high-voltage pulse power source earth terminal is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; The laser signal that laser instrument produces is by fiber-optic illuminated surperficial to Nonlinear photoconductive switch to be measured;

Oscillograph, for surveying Blumlein transmission line charging voltage signal by the first high-voltage probe, producing laser signal and for surveying the voltage pulse waveforms on matched load by the second high-voltage probe, can obtain each waveform signal and arrive the oscillographic moment and amplitude for passing through photoelectric probe detecting laser; Wherein oscillograph is surveyed Blumlein transmission line charging voltage waveform by the first high-voltage probe, and this waveform signal is transferred to oscillograph, obtains high-voltage pulse power source output high-voltage signal magnitude of voltage on Blumlein transmission line on oscillograph ; Oscillograph is surveyed the potential pulse obtaining on matched load by the second high-voltage probe, and this voltage pulse signal is transferred to oscillograph, obtains output voltage values on matched load on oscillograph , obtain the moment that obtains output voltage pulse on matched load simultaneously , wherein, for voltage pulse signal arrives the oscillographic moment, be that the second high-voltage probe is to oscillograph connecting line length; The turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, being the electricity time span of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer, for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, being the characteristic impedance of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; Wherein Blumlein transmission line charging voltage is the high-voltage signal of high-voltage pulse power source output; The reflected light that the laser signal that wherein oscillograph the first port produces by photoelectric probe detecting laser produces while being irradiated to Nonlinear photoconductive switch to be measured surface; Oscillograph the second port is connected with the first glass ceramics Plate-Transmission-Line both ends of the surface argent electrode respectively by the first high-voltage probe, and oscillograph the 3rd port is connected with matched load two ends by the second high-voltage probe.

Test process comprises:

Step 1: the Blumlein transmission line being comprised of two glass ceramics Plate-Transmission-Lines is fixed on organic glass base by limit clamp, the making material of organic glass base and limit clamp is organic glass, its objective is under high pressure insulation, meanwhile, the convenient state of observing Nonlinear photoconductive switch to be measured in test process of transparent organic glass;

Step 2: the one end that Nonlinear photoconductive switch to be measured is arranged on to Blumlein transmission line, matched load is arranged on the other end of Blumlein transmission line, utilize respectively Nonlinear photoconductive switch gib screw to be measured and matched load gib screw to fix, wherein, the end of two gib screws all will polish smooth (roughness with fine sandpaper maximal value be 3.2 μ m, maximal value is 12.5 μ m), prevent from causing point discharge in hyperbaric environment, and Nonlinear photoconductive switch to be measured while being connected with argent electrode with matched load connecting lead wire all adopt silver foil, the width of silver foil is identical with the width of argent electrode, its objective is contact resistance when reducing connecting lead wire is connected with argent electrode; The impedance matching of the impedance of matched load and Blumlein transmission line, is 2 times of characteristic impedance of glass ceramics Plate-Transmission-Line, and object is to prevent the reflection of pulse.

Step 3: utilize high-voltage pulse power source to the charging of Blumlein transmission line, the characteristic of this voltage is determined by the required satisfied technical indicator of Nonlinear photoconductive switch to be measured; After to be charged completing, it is surperficial to Nonlinear photoconductive switch to be measured through Optical Fiber Transmission that laser instrument produces laser signal, makes Nonlinear photoconductive switch conducting to be measured; After Nonlinear photoconductive switch conducting to be measured, will between the first flat ceramic transmission line other end argent electrode, produce a potential pulse, this potential pulse propagates into the matched load between the first glass ceramics Plate-Transmission-Line and the second flat ceramic transmission line; Finally by the second high-voltage probe, detect the potential pulse obtaining on matched load; Whole proving installation in the present invention is all immersed in transformer insulation oil, has improved the insulating capacity of Nonlinear photoconductive switch to be measured and other devices, has avoided because the phenomenons such as dielectric surface flashover have a negative impact to switch the performance test results.Wherein the turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, for the electricity time span of glass ceramics Plate-Transmission-Line 8, it is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer, for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, characteristic impedance for glass ceramics Plate-Transmission-Line.

The present embodiment principle of work is: install after Nonlinear photoconductive switch to be measured, utilize high-voltage pulse power source to charge to the Blumlein transmission line being comprised of two glass ceramics Plate-Transmission-Lines, the characteristic of this voltage is determined by the required satisfied technical indicator of Nonlinear photoconductive switch to be measured; After to be charged completing, laser instrument produces laser signal process Optical Fiber Transmission to Nonlinear photoconductive switch to be measured 7 surfaces, makes Nonlinear photoconductive switch 7 conductings to be measured; After Nonlinear photoconductive switch 7 conductings to be measured, will between two argent electrodes of the first flat ceramic transmission line, produce a potential pulse, this potential pulse propagates into the matched load 10 between the first glass ceramics Plate-Transmission-Line and the second flat ceramic transmission line; Finally by the second high-voltage probe, detect the potential pulse on matched load, in conjunction with above-mentioned testing procedure, obtain Nonlinear photoconductive switch to be measured: turn on delay time, shake, conducting resistance parameter.

Embodiment bis-: the test in the withstand voltage and life-span of Nonlinear photoconductive switch to be measured is tested by Nonlinear photoconductive switch proving installation to be measured.

Wherein Nonlinear photoconductive switch proving installation to be measured comprises high-voltage pulse power source, Blumlein transmission line, the first high-voltage probe, matched load, organic glass box, transformer insulation oil, limit clamp.Blumlein transmission line, comprise the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp; Described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode are in abutting connection with also conducting; The second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency;

Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw; Matched load is arranged between the first glass ceramics Plate-Transmission-Line other end argent electrode and the second glass ceramics Plate-Transmission-Line other end argent electrode; Oscillograph the second port is connected with the first glass ceramics Plate-Transmission-Line both ends of the surface argent electrode respectively by the first high-voltage probe;

In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open;

Test process is: do not having under the condition of laser instrument input pulse laser, improve gradually the output voltage of high-voltage pulse power source, improve gradually the charging voltage of Blumlein transmission line, until Nonlinear photoconductive switch generation self breakdown to be measured, in Nonlinear photoconductive switch generation self breakdown previous moment to be measured, on the Blumlein transmission line that oscillograph measures by the first high-voltage probe, the amplitude of high-voltage signal is the withstand voltage of Nonlinear photoconductive switch to be measured; At Nonlinear photoconductive switch to be measured, be operated under required satisfied technical indicator condition, allow Nonlinear photoconductive switch continuous firing to be measured, until Nonlinear photoconductive switch to be measured cannot normally be worked, record the work times of Nonlinear photoconductive switch to be measured, be the life-span of Nonlinear photoconductive switch to be measured.

The present invention is not limited to aforesaid embodiment.The present invention expands to any new feature or any new combination disclosing in this manual, and the arbitrary new method disclosing or step or any new combination of process.

Claims

1. a Nonlinear photoconductive switch proving installation, comprise delay synchronizer, laser instrument, photoelectric probe, high-voltage probe, oscillograph, high-voltage pulse power source, characterized by further comprising Blumlein transmission line, matched load, the first high-voltage probe, the second high-voltage probe, organic glass box, organic glass base, transformer insulation oil, limit clamp;

2. a Nonlinear photoconductive switch proving installation, comprises high-voltage pulse power source, oscillograph, characterized by further comprising Blumlein transmission line, the first high-voltage probe, matched load, organic glass box, transformer insulation oil, limit clamp;

In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open.

3. a kind of Nonlinear photoconductive switch proving installation according to claim 1 and 2, it is characterized in that described Blumlein transmission line comprises the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp, described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode adjacency, described Nonlinear photoconductive switch negative electrode to be measured is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode one side, the second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency, described matched load is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode, between the second glass ceramics Plate-Transmission-Line other end argent electrode.

4. a kind of Nonlinear photoconductive switch proving installation according to claim 3, the making material that it is characterized in that described organic glass base and limit clamp is organic glass, described limit clamp is arranged on Blumlein transmission line both sides, limit clamp both sides are fixed on Blumlein transmission line on organic glass base by the second screw, the 3rd screw, and wherein limit clamp makes the first glass ceramics Plate-Transmission-Line one end face argent electrode and the seamless adjacency of the second glass ceramics Plate-Transmission-Line one end face argent electrode; Described Nonlinear photoconductive switch to be measured is arranged on the first glass ceramics Plate-Transmission-Line other end argent electrode one side, and described Nonlinear photoconductive switch to be measured is fixed on limit clamp by the first screw; Be fixed on limit clamp by the 4th screw with matched load one end that the first glass ceramics Plate-Transmission-Line other end argent electrode is connected.

5. a kind of Nonlinear photoconductive switch proving installation according to claim 3, is characterized in that described Nonlinear photoconductive switch to be measured is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; Matched load is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; The width of described silver foil is identical with argent electrode width; Described the first screw, the second screw, the 3rd screw, the 4th tip of screw roughness maximal value be 3.2 μ m, maximal value is 12.5 μ m; The connecting line of described high-voltage pulse power source and Nonlinear photoconductive switch to be measured, the described connecting line in nearly Nonlinear photoconductive switch to be measured one end adopts laciniation; The impedance matching of the impedance of described matched load and Blumlein transmission line, is the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line characteristic impedance 2 times.

6. a Nonlinear photoconductive switch method of testing, is characterized in that comprising:

Step 2: Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw; In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open; Organic glass base bottom is positioned over organic glass and bottom;

Step 5: after the high-voltage signal of high-voltage pulse output has charged to Nonlinear photoconductive switch to be measured, laser instrument produces laser signal and after Optical Fiber Transmission, is irradiated to Nonlinear photoconductive switch to be measured surface, the reflected light producing while being irradiated to Nonlinear photoconductive switch to be measured surface with photoelectric probe exploring laser light signal, and this reflected light signal is converted to electric signal transmission to oscillograph, by oscillograph, obtain the moment that laser signal is irradiated to Nonlinear photoconductive switch to be measured surface , wherein, the laser signal recording for photoelectric probe arrives the oscillographic moment, for photoelectric probe is to oscillograph connecting line length, for electromagnetic wave velocity of propagation in wire, it is known quantity;

Step 6: when laser signal makes Nonlinear photoconductive switch conducting to be measured, between two argent electrodes of the first glass ceramics Plate-Transmission-Line, produce a potential pulse, this potential pulse propagates into matched load along the first glass ceramics Plate-Transmission-Line, then oscillograph detects the potential pulse obtaining on matched load by the second high-voltage probe, and oscillograph is transferred to the moment of matched load by obtaining voltage pulse signal , wherein, for this voltage pulse signal arrives the oscillographic moment, be that the second high-voltage probe is to oscillograph connecting line length; On oscillograph, obtain output voltage values u on matched load simultaneously _o; The turn on delay time of Nonlinear photoconductive switch to be measured is , wherein, being the electricity time span of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity; The shake of Nonlinear photoconductive switch to be measured , wherein, be the inferior Nonlinear photoconductive switch turn on delay time to be measured measuring, for positive integer, for repeatedly measuring turn on delay time the mean value obtaining; The conducting resistance of Nonlinear photoconductive switch to be measured is , wherein, being the characteristic impedance of the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line, is known quantity.

7. a Nonlinear photoconductive switch method of testing, is characterized in that comprising:

Step 2: Nonlinear photoconductive switch anode to be measured is connected with the first glass ceramics Plate-Transmission-Line one end face argent electrode, and Nonlinear photoconductive switch negative electrode to be measured is connected with the first glass ceramics Plate-Transmission-Line other end argent electrode; Wherein said the first glass ceramics Plate-Transmission-Line other end argent electrode is connected with high-voltage pulse power source earth terminal; The first glass ceramics Plate-Transmission-Line one end face argent electrode is connected with high-voltage pulse power source is anodal; Nonlinear photoconductive switch negative electrode to be measured is fixed on the first glass ceramics Plate-Transmission-Line other end argent electrode by the first gib screw; In organic glass box, be full of transformer insulation oil; Described Nonlinear photoconductive switch to be measured, Blumlein transmission line, matched load are placed in organic glass box, and be immersed in transformer insulation oil, wherein said Blumlein transmission line is fixed on organic glass base by limit clamp, the organic glass container that described organic glass box is upper end open;

8. according to a kind of Nonlinear photoconductive switch method of testing described in claim 7 or 8, it is characterized in that described Blumlein transmission line comprises the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, upper and lower overlapping being placed on organic glass base of described the first glass ceramics Plate-Transmission-Line and the second glass ceramics Plate-Transmission-Line, Blumlein transmission line is fixed on organic glass base by limit clamp, described the first glass ceramics Plate-Transmission-Line one end face argent electrode and the second glass ceramics Plate-Transmission-Line one end face argent electrode adjacency, described Nonlinear photoconductive switch negative electrode to be measured is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode one side, the second glass ceramics Plate-Transmission-Line other end argent electrode and organic glass base adjacency, described matched load is connected to the first glass ceramics Plate-Transmission-Line other end argent electrode, between the second glass ceramics Plate-Transmission-Line other end argent electrode.

9. a kind of Nonlinear photoconductive switch method of testing according to claim 8, the making material that it is characterized in that organic glass base and limit clamp is organic glass, described limit clamp is arranged on Blumlein transmission line both sides, limit clamp both sides are fixed on Blumlein transmission line on organic glass base by the second screw, the 3rd screw, and wherein limit clamp makes the first glass ceramics Plate-Transmission-Line one end face argent electrode and the seamless adjacency of the second glass ceramics Plate-Transmission-Line one end face argent electrode; Described Nonlinear photoconductive switch to be measured is arranged on the first glass ceramics Plate-Transmission-Line other end argent electrode one side, and described Nonlinear photoconductive switch to be measured is fixed on limit clamp by the first screw; Be fixed on limit clamp by the 4th screw with matched load one end that the first glass ceramics Plate-Transmission-Line other end argent electrode is connected.

10. a kind of Nonlinear photoconductive switch method of testing according to claim 8, is characterized in that described Nonlinear photoconductive switch to be measured is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; Matched load is connected with the first glass ceramics Plate-Transmission-Line, the second glass ceramics Plate-Transmission-Line by silver foil respectively; The width of described silver foil is identical with argent electrode width; Described the first screw, the second screw, the 3rd screw, the 4th tip of screw roughness maximal value be 3.2 μ m, maximal value is 12.5 μ m; The connecting line of described high-voltage pulse power source and Nonlinear photoconductive switch to be measured, the described connecting line in nearly Nonlinear photoconductive switch to be measured one end adopts laciniation; The impedance matching of the impedance of described matched load and Blumlein transmission line, is the first glass ceramics Plate-Transmission-Line or the second glass ceramics Plate-Transmission-Line characteristic impedance 2 times.