CN104164657A - Vacuum equipment for forming photoelectric device thin film - Google Patents
Vacuum equipment for forming photoelectric device thin film Download PDFInfo
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- CN104164657A CN104164657A CN201410380040.3A CN201410380040A CN104164657A CN 104164657 A CN104164657 A CN 104164657A CN 201410380040 A CN201410380040 A CN 201410380040A CN 104164657 A CN104164657 A CN 104164657A
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Abstract
The invention relates to the technical field of vacuum film coating, and in particular relates to vacuum equipment for forming a photoelectric device thin film. The equipment comprises a plurality of vacuum cavities, wherein cathodes and anodes are arranged in at least two vacuum cavities, each cathode and each anode are arranged in parallel oppositely, a high-frequency power supply is connected between each cathode and each anode, a plurality of air supply holes for conveying film forming gas and more than two air exhaust holes are formed in each cathode, an air supply pipe is arranged in each air supply hole, the air supply pipe is communicated with an air supply cylinder which is arranged on the back surface of each cathode, the air supply cylinder is used for conveying dilute gas, and a thermal catalyst is arranged in the air supply cylinder. Because the dilute gas is heated by adopting the thermal catalyst, the gas is activated and decomposed, and more H atoms are formed, so that the problem that the quality of a thin film is reduced due to high-order silane gas which is formed by heating the film forming gas in PECVD (plasma enhanced chemical vapor deposition) can be solved; the thin film formed by using the vacuum equipment disclosed by the invention is small in damage and high in quality, and is also high in conversion efficiency.
Description
Technical field
The present invention relates to technical field of vacuum plating, particularly a kind of vacuum apparatus that forms photoelectric device film.
Background technology
Mostly integrated by the film of very thin thickness in nearly all electron devices such as semiconductor integrated circuit, solar cell, liquid-crystal display.The characteristic of this film is determining the characteristic of electron device.In order not damage lower film, while forming this film, require temperature below 500 DEG C, particularly use the device of glass, plastic base, technological temperature requires below 300 DEG C, therefore, and in the time of heated air, can not be too near apart from the distance of substrate, can not make the temperature of substrate too high, otherwise can cause that substrate produces the problems such as stress deforms, the more important thing is and can change because of the too high generation device property of temperature, therefore, the equipment of formation device seems important all the more.
High quality, high-speed film deposition techniques and equipment are to realize in high-performance, the various thin-film devices of low cost fabrication in indispensable key element, particularly in electrooptical device, during representative silicon film solar batteries is manufactured, require silicon film to there is high quality, can complete at a high speed making, requirement simultaneously can be in big area deposit film and will there is high efficiency.
Up to now, while forming semiconducter device in photoelectric device, the equipment using generally uses plasma enhanced chemical vapor deposition (being called for short PECVD) equipment, PECVD arrives under the state of 100Pa left and right in decompression, unstripped gas, in plasma, is clashed into mutually and is made it to decompose with accelerated electronics.That is to say, gas is in the air rarefaction three-dimensional space that approaches vacuum, by point-to-point collision between gas molecule and electronics, film forming.
Roughly divide and be made by PECVD method for silicon film low temperature making method known to everybody, be mainly used in the formation of hydrogenation non crystal silicon film, polycrystal silicon film.
In PECVD, in order to realize high speed film forming, by increasing plasma electric power, promote the decomposition of silane gas and hydrogen, increase plasma electric power, nothing more than being the electronic temp T improving in plasma
e(plasma potential V
pwith T
ealso increase thereupon in direct ratio), on the contrary, increase the ionic bombardment to film surface, increase generation SiH
2formation speed, thereby, promoted the generation of high-order silane, finally can promote the generation of powder, high-order silane described herein, with Si
nh
mgas molecule formula represent, n can rise to 5 at most.But, be not the Si not existing after n rises to more greatly
nh
mgas molecule.When with gas in the SiH that exists
2after gas molecule polymerization reaction take place, particularly in plasma, if make positive ion and negative charged molecule repeatedly merge reaction, can generate in tens of nm grade sizes bunch or be greater than the particle (being called powder) of this size.Certainly, these of generation bunch and powder, for high-quality film, are a kind of unfavorable factors, can not get high-quality film, can have influence on the performance of device.
The method that replaces increase plasma electric power is also improved the method for plasma excitation frequency number, uses the frequency higher than VHF, by reducing plasma potential energy V
preduce the mutual shock between ion, the high efficiency of raising amorphous silicon hydride, crystalline membrane is had to certain effect and will form the sufficient hydrogen atom of silicon metal needs, but, no matter use which VHF frequency, as long as reach certain rate of film build, finally also be difficult to avoid increasing plasma electric power, therefore, also keep away unavoidable above-mentioned problem and occur.Therefore, be improved the extent of dilution of hydrogen atom as the method that does not improve plasma electric power, raising hydrogen atom, namely increase H
2/ SiH
4gas flow, still, can reduce like this SiH
4the dividing potential drop of gas, runs in the opposite direction with the object of high speed film forming on the contrary, final, must improve plasma electric power, promote SiH
4the decomposition of gas, same, be also difficult to avoid above-mentioned problem.As increasing plasma electric power, the method that reduces plasma key shock is to improve thin film deposition pressure, but, after once deposition pressure improves, can be because of the increase of molecular density, cause reaction to generate high-order silane, this is also the reason that causes the reduction film qualities such as dust, therefore it is more difficult, addressing this problem.
In addition, Cat-CVD method is equally under pressure reduction space state, molecular raw material gas with clashed into mutually by the solid material surface of fine and close atomic building, utilize contact reacts to be decomposed to form film.That is to say that Cat-CVD method is point and the shock of face.Therefore, gas molecule decomposition efficiency in Cat-CVD method, the utilising efficiency of unstripped gas is far longer than PECVD method (generally between 5 times to 10 times).Only this point, in the consumption of manufacture unstripped gas large solar energy in large area battery and liquid-crystal display manufacture, tool has very important significance.Due to the decomposition of integrated thin-film, the free base unit weight of generation is very large, therefore, can increase film and form speed, enhances productivity.Owing to not utilizing plasma, therefore, in principle, there is not the problem that produces micro powder described in PECVD method because of ion bombardment.
In addition, in Cat-CVD method, because do not utilize plasma completely, so, just can be because the ion pair substrate in plasma causes damage, can be because electric charge reason damages lower layer device yet.Therefore, Cat-CVD method is mainly used in the making of semiconducter device and due in worrying that electric charge too much in lower one deck isolator can more hurtful ultra tiny silicon integrated circuits making.
In Cat-CVD method, owing to not using plasma, there is not in principle above-mentioned plasma bombardment problem, also seldom produce meal, owing to having promoted the generation of hydrogen atom, therefore, can produce with comparalive ease crystal silicon film.Aspect big area deposition, in principle, be not also restricted, therefore, in recent years, this technology is subject to suddenly showing great attention to of industry.But, due to the radiation of hot catalyst, cannot avoid improving substrate temperature, can not form easily high-quality stabilizing films.In addition, owing to being subject to the thermal degradation of hot catalyst, be difficult to avoid producing Siliciumatom.But Siliciumatom is the composition of not wishing appearance in high quality silicon film, so very difficult high speed forms high-quality crystal silicon film.
The film that utilizes PECVD to make, more than containing hydrogen atom 10at% in unstripped gas, can make film die down, and particularly can cause characteristic attenuation.Even and Cat-CVD method is used identical unstripped gas; in film, only existing lower than 3at% hydrogen atom. the film of making is for this reason very fine and close; have chemically-resistant, suppress the characteristic of the infiltrations such as water, impurity, the film of formation occupy good characteristic as surface protection film.In addition, the film that profit is made in this way, its characteristic is highly stable.
Cat-CVD (chemical vapour deposition of Catalytic Chemical Vapor Deposition=catalyst) method, in thin-film device in indispensable key element, particularly in electrooptical device, during representative silicon film solar batteries is manufactured, require silicon film to there is high quality, can complete at a high speed making, requirement simultaneously can be in big area deposit film and will there is high efficiency.In addition, in the method, greatly promote the generation of hydrogen atom, therefore, there is the advantage that is easy to the Si film that forms crystallization.
But reason is due to thermal radiation, improve the temperature of film surface, promote high-order silane to generate, at present, still do not establish the method for fundamentally improving this phenomenon.Reason is to work as SiH
4gas generates H atom and Si atom after utilizing catalyst to decompose, although H atom is applicable to forming silicon film very much,, can not expect to utilize Si atom to form high-quality silicon film because Si atom is in gas phase, can with gas in H, H
2deng reacting, generate SiH and SiH
2radical, the equally time of the meeting high-quality silicon film to be formed not.For above-mentioned problem, in the patent of Japanese patent application No. 2000-130858, the basic structure of the cathode type PECVD equipment disclosing at in-built hot catalyst.That is to say, in plasma CVD equipment, at the gas stream that produces isoionic region upside through position, the catalyst (heated filament) being made up of the metal such as tungsten or tantalum is set, or different hot catalyst is set through position at different gas streams or hot catalyst is only set through position at hydrogen stream, then after gas spray, carry out gas mixing.But, also exist and guarantee that uniform film thickness distributes, controls the problem such as the method for active hydrogen air tightness, partition heat radiation method and needs to solve.
As mentioned above, in film-type photoelectric device, consider from large-area applications, as: polysilicon and microcrystalline silicon film are at phototubes such as solar cell, the demonstrations of giant-screen plane, adopting at present and studying more preparation method is mainly PECVD technology, this technology is full-fledged aspect the preparation of non-crystalline silicon (a-Si:H), advantage be can carry out big area deposition, film forming is more even, but exist and under superpower, produce ion dam age and be unfavorable for film crystallization, the shortcoming that film deposition rate is lower.For PECVD, hot-wire chemical gas-phase deposition (HWCVD) is a kind of more novel technology, and high temperature heated filament fully decomposes reactant gases, and sedimentation rate is high, meanwhile, provides a large amount of high-energy atom H, is conducive to crystallization.But, in the situation that sedimentation rate is too high, in film, form micro-cavity, easily oxidation in air.
Summary of the invention
The present invention is directed to a kind of vacuum apparatus that forms photoelectric device film that is difficult at present to form at a high speed the problem of little, high quality of long lifetime, efficiency of conversion decay, homogenizing film and provide on large substrate.
For reaching above-mentioned functions, technical scheme provided by the invention is:
A kind of vacuum apparatus that forms photoelectric device film, comprise multiple vacuum cavities, have at least and in the vacuum cavity described in 2, be provided with negative electrode and anode, described negative electrode is parallel with described anode to be oppositely arranged, described negative electrode, between described anode, be connected with high frequency electric source, on described negative electrode, be provided with a plurality of injection wells for delivery of film forming gas and 2 above venting holes, in each described injection well, be provided with induction pipe, described induction pipe is connected with the cylinder of supplying gas that is arranged on described cathode back, the described cylinder of supplying gas is for delivery of diluent gas, in the described cylinder of supplying gas, be provided with the hot catalyst for diluent gas is heated.
Preferably, described anode and described negative electrode are erect and are oppositely arranged in described vacuum cavity, and substrate is placed near the tow sides of described anode.
Preferably, the air feed port of described injection well is less than the venting port of described venting hole to the distance of described substrate to the distance of described substrate.
Preferably, the temperature of described hot catalyst is between 300 DEG C～2000 DEG C.
Preferably, a plurality of described injection wells are arranged on described negative electrode equably, and the distance between two adjacent injection wells is not more than 8mm.
Preferably, the total gas flow rate of described injection well is greater than the total gas flow rate of described venting hole.
Preferably, the temperature of described hot catalyst is between 500 DEG C～1900 DEG C.
Preferably, the distance between two adjacent described injection wells is not more than 6mm.
Preferably, described negative electrode is fixedly mounted in described vacuum cavity, and described anode is fixed on dolly, between described dolly and described vacuum cavity, is provided with line slideway.
Preferably, the vacuum apparatus of described formation photoelectric device film also comprises a vacuum carrying chamber, and described vacuum carrying is provided with conveying robot in chamber, and described vacuum cavity is connected with described vacuum carrying chamber.
Beneficial effect of the present invention is: owing to utilizing hot catalyst heating diluent gas, activate, decompose gas, form more H atom, reduce owing to heating film forming gas in PECVD and formed high-order silane gas, reduce the problem of film quality, the diluent gas that is provided with built-in heated filament at cathode back due to the present invention cylinder of supplying gas, can not form problems of excessive heat to glass substrate, the non-C gas of non-SI and film forming gas are film forming in air feed port hybrid reaction, and after reacting by venting port in time, gas is discharged, reduce the formation of high-order silane, particularly can form rapidly silicon metal or microcrystalline silicon film, improve significantly production efficiency, the film that utilizes the present invention to form is little owing to damaging, quality is high, therefore, its efficiency of conversion is also high, in addition, can utilize multiple vacuum cavities to form respectively different films, by rational collocation, can increase substantially the productivity effect of product.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is the diagrammatic cross-section of vacuum cavity Anodic and negative electrode;
Fig. 3 is the structural representation that air feed gas circuit is set on negative electrode.
Embodiment
Below in conjunction with accompanying drawing 1, to accompanying drawing 3, the present invention is further elaborated:
A kind of vacuum apparatus that forms photoelectric device film as depicted in figs. 1 and 2, comprises 603 and 1 vacuum carrying chamber 602 of 100,1 transport passage for transporting of 7 vacuum cavities.Vacuum cavity 100 is fixedly connected with vacuum carrying chamber 602 with transport passage for transporting 603.The middle part in vacuum carrying chamber 602 is provided with conveying robot 601, and conveying robot 601 is respectively to transferring substrates 103 in multiple vacuum cavities 100; The two ends of transport passage for transporting 603 are connecting respectively the vacuum side door 606 and the atmosphere side door 607 that keep internal vacuum not to be lowered, vacuum side door 606 and atmosphere side door 607 are in carrying substrate 103 processes, can not open simultaneously, otherwise can reduce internal vacuum, affect quality product.
As shown in Figure 2, have at least and in 2 vacuum cavities 100, be provided with negative electrode 102 and anode 101, negative electrode 102 is parallel with anode 101 to be oppositely arranged, between negative electrode 102, anode 101, be connected with high frequency electric source, on negative electrode 102, be provided with a plurality of 105 and 2 above venting holes 107 of injection well for delivery of film forming gas, in each injection well 105, be provided with induction pipe 401, induction pipe 401 is connected with the cylinder 402 of supplying gas that is arranged on negative electrode 102 back sides, supply gas cylinder 402 for delivery of diluent gas, in the cylinder 402 of supplying gas, be provided with hot catalyst 403.In the present embodiment, anode 101 and negative electrode 102 are oppositely arranged in the interior setting of vacuum cavity 100, substrate 103 is placed near the tow sides of anode 101, anode 101 is fixedly mounted on dolly 009, and dolly 009 drives substrate 103 to move between vacuum cavity 100, transport passage for transporting 603 and vacuum carrying chamber 602.
The gas that the present invention uses is roughly divided into two kinds, and a kind of is Si or the C series raw material gas that contains Si or C in molecular formula, as: SiH
4, Si
2h
6, Si
3h
8, SiF
4, SiCl
4, SiCl
2h
2do not contain the non-Si of Si or C or the diluent gas of C series, as: H
2, N
2, He, Ar, the gas such as Ne, Xe, these two kinds of gases are sent to separately respectively, the Si that the former contains Si or C or the film forming gas of C, below with SiH
4for representative, do not contain the non-Si of Si or C or the diluent gas of C series, below with H
2for representative, describe.The supply gas hot catalyst 403 of cylinder 402 interior settings of diluent gas utilization heats, activates, then, after mixing, forms rapidly film with containing the serial film forming gas of Si or C in plasma space 111.That is to say, under high frequency situation, make film forming gas become enhancement type plasma, utilize hot catalyst 403 to heat, decompose after diluent gas, mix at air feed port, even therefore under high speed filming condition, also can form easily that crystallinity is high, the crystal silicon film of Functionality, quality and appealing design.
Particularly: freely control hot catalyst 403 to H by independent
2heat, activate, with the independent SiH freely controlling
4under high frequency condition, forming isoionic gas mixes, thereby avoid utilizing hot catalyst 403 to produce and do not expected the radical generating, because these hot catalyst 403 heating are that the cylinder 402 of supplying gas arranging at negative electrode 102 back sides carries out, can avoid hot catalyst 403 direct radiations to substrate 103, thereby avoid the Upgrade Problem of film surface temperature, the side effect that has also suppressed hot catalyst 403 is the high-order silane reaction that gas heating effect produces in gas, because SiH
2the insertion reaction of gas, the reaction that generates high-order silane is exothermic reaction, and gas heating effect can make gas temperature rise, inhibited to generating high-order silane.
On negative electrode 102, the air feed port 1051 of injection well 105 is less than the venting port 1071 of venting hole 107 to the distance of substrate 103 to the distance of substrate 103, by using close to air feed port 1051 air feed of substrate 103 and venting port 1071 exhausts far away apart from substrate 103, realize and on large-area substrates 103, generate homogeneous film thickness, even membranous film.Utilize the present invention, can on the length of side is the substrate 103 of 1400 × 1100 meters, form at a high speed, in high quality that homogeneous film thickness distributes, even membranous film.
Hot catalyst 403 at least surface is to be made up of metallic substance, and this metallic substance is to be that main component forms by the one in the metals such as dystectic tantalum, tungsten, rhenium, osmium, iridium, niobium, molybdenum, ruthenium, platinum, and hot catalyst 403403 uses thread metallic substance conventionally.In addition, when hot catalyst 403 when deposit film, if while containing dopant material in hot catalyst 403, before thin film deposition, utilizes in advance the temperature higher than depositing temperature on metallic substance, hot catalyst 403 is carried out to several minutes thermal pretreatment, can effectively reduce impurity.
Hot catalyst 403 is arranged on diluent gas and supplies gas in cylinder 402, at the two ends of supplying gas cylinder 402, be provided with insulated enclosure lid, hot catalyst 403 is through the center of sealing cover, the other air inlet port of carrying non-Si or non-C diluent gas that arranges of sealing cover is hollow state in the cylinder 402 of supplying gas.
It should be noted that, although the cylinder 402 of supplying gas in Fig. 3 is arranged transverselys,, in actual use, we also can adopt longitudinal setting as required.
Carry the induction pipe 401 of diluent gas to be arranged on the centre of injection well 105, induction pipe 401 around can be by containing the film forming gas of Si or C in molecular formula, and induction pipe 401 length are no more than air feed port 1051, are so more conducive to gas and mix.
Although above-mentioned non-C, non-Si gas utilize after 403 heating of hot catalyst, deliver in plasma space 111,, a part of gas can decompose, activate after heating, and the temperature of this and hot catalyst 403 is in direct ratio.For example, although hydrogen gas has pressure reason,, in the time that the temperature of hot catalyst 403 exceedes 1000 DEG C of left and right, because decomposition reaction generates hydrogen atom.This hydrogen atom is described above, has the effect that promotes crystallization.Even if the temperature of hot catalyst 403 is in the time of the temperature condition lower than 1000 DEG C, the hydrogen atom generating is not clearly, degree of crystallinity facilitation effect is also futureless good like that, but, by using the side effect of hot catalyst 403, that is: by the heating to gas, can suppress to produce the formation reaction of high-order silane, also there is certain effect to forming high-quality amorphous silicon hydride.Minimum also must the reaching more than 300 DEG C of temperature of hot catalyst 403, more wishes more than 500 DEG C, to obtain better effect.By by more than the temperature increase to 500 of hot catalyst 403 DEG C, gas heating effect can be very obvious.In addition, top temperature wishes, below 2000 DEG C, to be preferably in below 1900 DEG C.At temperature more than 1900 DEG C, can from hot catalyst 403 and circumferential component, produce foreign gas, also can produce the problem such as evaporation of hot catalyst 403 materials self.
In this enforcement example, on negative electrode 102, be provided with multiple injection wells 105, between injection well 105, be provided with equably multiple venting holes 107.Distance between adjacent injection well 105 is within 8mm, if be greater than 8mm, the concentrated electric field junction forming between the air feed port 1051 of injection well 105 will die down, and the plasma therefore producing will be more weak, is difficult to ensure form on substrate 103 uniform film.In order to obtain film more uniformly, within the distance between adjacent injection well 105 is preferably in 6mm.
In the present invention, enter from the entrance of vacuum cavity 100 location, depths of vacuum cavity 100 when carrying the dolly of substrate 103 near the anode 101 of erectting setting, anode surface and gravity direction almost parallel because anode 101 is erect are set.In the time that substrate 103 uses glass substrate, because glass substrate can be carried under the situation of erectting, therefore glass substrate not only can not produce lower curved phenomenon, and convenient operation.
Because anode 101 of the present invention and negative electrode 102 adopt erect-type setting, therefore on an anode 101, two substrates 103 can be set, traditional 2 times of being horizontally disposed with number, 2 anodes 101 are set 4 plate bases 103 just can be set, along with anode 101 arranges increasing of number, the quantity of substrate 103, compared with being horizontally disposed with the number of substrate 103, can improve exponentially, therefore, erectting the mode that substrate 103 is set can enhance productivity significantly.
In anode 101, be provided with well heater 104, well heater 104 can utilize radiation heating by near the substrate 103 of that is arranged on anode 101, make substrate 103 keep constant temp, the well heater 104 of anode 101 interior settings utilizes temperature regulator (not marking in figure) to control, temperature regulator is according to the detected temperatures to substrate 103, temperature to well heater 104 is controlled, the temperature of substrate 103 is remained in certain temperature range, the stable of film-forming temperature be can guarantee like this, homogeneous film thickness and even membranous film are conducive to form.Substrate 103 utilizes substrate fixture 109 by fixing substrate 103.
Air feed port 1051 is less than the distance of venting port 1071 apart from substrate 103 apart from the distance of substrate 103.Because film forming gas will react between the gas in vacuum cavity 100, on substrate 103, want film former, therefore, the gas flow of injection well 105 is greater than the gas flow of venting hole 107, and air feed port 1051 end faces are as far as possible little, that is to say, the area of all air feed ports 1051 is greater than the area of venting port 1071, could keep so stable gas reaction, by reasonably configuring off-gas pump, avoid energy dissipation simultaneously.
In this enforcement example, two that on negative electrode 102 surfaces, arrange equably with upper air-vent 107, venting hole 107 communicates with exhaust gas circuit 108, equally, be provided with multiple injection wells 105 surface uniform of negative electrode 102, injection well 105 communicates with air feed gas circuit 106, after the present invention utilizes vacuum pump (not marking in figure) that vacuum cavity 100 is vacuumized, under under the environment of high vacuum, between negative electrode 102 and anode 101, apply high frequency electric source, form electric field, can form electric field concentration phenomenon effect in the end of the air feed port 1051 of negative electrode 102, under electric field action, electronics and gas molecule collision, diluent gas utilizes the rear gas delivery of hot catalyst 403 heating, near air feed port 1051, mix with film forming gas, form and produce isoionic starting point, the heated excitation of gas of sending to, in plasma space 111, produce glow discharge, on substrate 103, deposit thin film.
In the time of deposit film, because diluent gas catalyst 403 as heated in: hydrogen heats and decomposes, within very short time, can activate film forming gas as silane, can form at short notice plasma body, the pressure reduction of air feed port 1051 is greater than the pressure reduction in plasma space 111, simultaneously, be connected with vacuum pump for vent (not shown) apart from venting port 1071 on substrate 103 negative electrode 102 far away, therefore, the gas that reacted gas can newly be sent in time squeezes a side far away apart from substrate 103, that is to say near that reaction gas later can be squeezed the venting port 1071 of negative electrode 102 in time, finally can be processed accordingly from the timely device for transferring of relief outlet by exhaust gas circuit 108 by vacuum exhaust pump.The negative electrode 102 of this structure can avoid reacting rear gas as SiH
2deng with the secondary response again of silane gas, generate high-order silane (Si
nh
m) gas.Suppress the reaction repeatedly of gas after reaction, reduce or got rid of and in film former, do not wished that the high-order silane etc. occurring forms film, the powder or the film that generate due to high-order silane etc. are reduced, the quality of the film improving, avoid the photo attenuation phenomenon causing due to high-order silane etc., thereby can further improve the efficiency of conversion of electrooptical device.In order further to improve quality of forming film, air feed port 1051 exceeds electrode.
Although utilize at least 2 venting ports 1071 can exclude the rear gas of reaction, but, in order to make as much as possible substrate 103 surfaces have uniform gaseous mass, or uniform gas distribution, equably gas after reaction being got rid of is in time one of reason ensureing quality product, therefore, be preferably in multiple venting ports 1071 are set on negative electrode 102 equably.Distance between venting port 1071 is preferably in 8cm, more wishes in 6cm.
Due to the maximization of product, be unfavorable for the independent carrying of substrate 103, in order can easily substrate 103 to be arranged near anode 101, in the present embodiment, anode 101 is fixedly mounted on dolly 009, becomes one with dolly 009, and negative electrode 102 is fixedly installed in vacuum cavity 100, the bottom of dolly 009 is provided with line slideway 112, and dolly 009 can be moved between vacuum cavity 100 is inside and outside.Be convenient to like this from vacuum cavity 100 outsides, substrate 103 be arranged near anode 101, in process of production, generally by mechanical manipulator or special loader, substrate 103 sent into dolly 009.In order to prevent bringing damage to the film on substrate 103 surfaces or substrate 103 surfaces, in the present invention, not directly contact between substrate 103 and anode 101, but substrate fixture 109 fixing bases 103 that utilize anode 101 top and the bottom to arrange, thereby reduce some unnecessary contacts, prevented the defects such as the scuffing of product.
Vacuum cavity 100 inside are fixed wtih negative electrode 102, air feed gas circuit 106 on negative electrode 102 is connected with the corresponding gas circuit outside equipment respectively with exhaust gas circuit 108, exhaust gas circuit 108 is connected with exhaust vacuum valve (not shown), dolly 009 enter vacuum cavity 100 interior after, substrate 103 with negative electrode 102 in relative and parastate, utilize well heater 104 radiation of anode 101 interior settings, substrate 103 is heated equably, anode 101, negative electrode 102 are connecting respectively high frequency electric source, vacuumizing under state, carry out thin film deposition.
On the inlet mouth of the air feed gas circuit 106 of negative electrode 102, be provided with multiple gas inletes, connecting at least 2 airway (not shown)s, film forming desired gas is delivered to negative electrode 102 by airway, in the air feed gas circuit 106 of negative electrode 102, flow while mix, finally spray from air feed port 1051.
The above embodiment, it is preferred embodiments of the present invention, be not to limit practical range of the present invention, the equivalence of doing according to structure, feature and principle described in the present patent application the scope of the claims therefore all changes or modifies, and all should be included in patent claim of the present invention.
Claims (10)
1. one kind forms the vacuum apparatus of photoelectric device film, comprise multiple vacuum cavities, it is characterized in that: have at least and in the vacuum cavity described in 2, be provided with negative electrode and anode, described negative electrode is parallel with described anode to be oppositely arranged, described negative electrode, between described anode, be connected with high frequency electric source, on described negative electrode, be provided with a plurality of injection wells for delivery of film forming gas and 2 above venting holes, in each described injection well, be provided with induction pipe, described induction pipe is connected with the cylinder of supplying gas that is arranged on described cathode back, the described cylinder of supplying gas is for delivery of diluent gas, in the described cylinder of supplying gas, be provided with the hot catalyst for diluent gas is heated.
2. the vacuum apparatus of formation photoelectric device film as claimed in claim 1, is characterized in that: described anode and described negative electrode are erect and are oppositely arranged in described vacuum cavity, and substrate is placed near the tow sides of described anode.
3. the vacuum apparatus of formation photoelectric device film as claimed in claim 1, is characterized in that: the air feed port of described injection well is less than the venting port of described venting hole to the distance of described substrate to the distance of described substrate.
4. the vacuum apparatus of formation photoelectric device film as claimed in claim 1, is characterized in that: the temperature of described hot catalyst is between 300 DEG C～2000 DEG C.
5. the vacuum apparatus of formation photoelectric device film as claimed in claim 1, is characterized in that: a plurality of described injection wells are arranged on described negative electrode equably, and the distance between two adjacent injection wells is not more than 8mm.
6. the vacuum apparatus of formation photoelectric device film as claimed in claim 1, is characterized in that: the total gas flow rate of described injection well is greater than the total gas flow rate of described venting hole.
7. the vacuum apparatus of formation photoelectric device film as claimed in claim 4, is characterized in that: the temperature of described hot catalyst is between 500 DEG C～1900 DEG C.
8. the vacuum apparatus of formation photoelectric device film as claimed in claim 5, is characterized in that: the distance between two adjacent described injection wells is not more than 6mm.
9. the vacuum apparatus of the formation photoelectric device film as described in claim 1 to 8 any one, it is characterized in that: described negative electrode is fixedly mounted in described vacuum cavity, described anode is fixed on dolly, between described dolly and described vacuum cavity, is provided with line slideway.
10. the vacuum apparatus of the formation photoelectric device film as described in claim 1 to 8 any one, it is characterized in that: the vacuum apparatus of described formation photoelectric device film also comprises a vacuum carrying chamber, described vacuum carrying is provided with conveying robot in chamber, and described vacuum cavity is connected with described vacuum carrying chamber.
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| CN110865594A (en) * | 2019-11-18 | 2020-03-06 | 浙江长兴昊隆电子科技有限公司 | Production monitoring method and device for high-performance metallized film |
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| JP2003173980A (en) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | Heat catalyst-containing cathode type pecvd apparatus, photoelectric transducer manufactured by using the same as well as its manufacturing method, heat catalyst- containing cathode type pecvd method, cvd apparatus using the same, film formed by the same method and device formed by using the same film |
| CN1861837A (en) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | CVD device for deposit spathic silicon |
| CN103938187A (en) * | 2014-04-29 | 2014-07-23 | 东莞职业技术学院 | Large-area thin-film deposition PECVD (Plasma Enhanced Chemical Vapor Deposition) electrode structure and equipment |
| CN204039494U (en) * | 2014-08-04 | 2014-12-24 | 东莞职业技术学院 | Form the vacuum apparatus of photoelectric device film |
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| JP2003173980A (en) * | 2001-09-26 | 2003-06-20 | Kyocera Corp | Heat catalyst-containing cathode type pecvd apparatus, photoelectric transducer manufactured by using the same as well as its manufacturing method, heat catalyst- containing cathode type pecvd method, cvd apparatus using the same, film formed by the same method and device formed by using the same film |
| CN1861837A (en) * | 2005-05-12 | 2006-11-15 | 三星Sdi株式会社 | CVD device for deposit spathic silicon |
| CN103938187A (en) * | 2014-04-29 | 2014-07-23 | 东莞职业技术学院 | Large-area thin-film deposition PECVD (Plasma Enhanced Chemical Vapor Deposition) electrode structure and equipment |
| CN204039494U (en) * | 2014-08-04 | 2014-12-24 | 东莞职业技术学院 | Form the vacuum apparatus of photoelectric device film |
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| CN110865594A (en) * | 2019-11-18 | 2020-03-06 | 浙江长兴昊隆电子科技有限公司 | Production monitoring method and device for high-performance metallized film |
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