CN104164657B - Form the vacuum equipment of photoelectric device film - Google Patents

Abstract

The present invention relates to technical field of vacuum plating, a kind of vacuum equipment forming photoelectric device film；Including multiple vacuum cavities, at least it is provided with negative electrode and anode in 2 vacuum cavities, negative electrode and anode are oppositely arranged in parallel, connect between negative electrode, anode and have high frequency electric source, being provided with a plurality of injection well for carrying film forming gas and the steam vent of more than 2 on negative electrode, be provided with snorkel in each injection well, snorkel is connected with the cylinder of supplying gas being arranged on cathode back, cylinder of supplying gas, for carrying diluent gas, is provided with hot catalyst in cylinder of supplying gas；Owing to utilizing hot catalyst to heat diluent gas, activate, decomposed gas, define more H atom, decrease owing to PECVD heating film forming gas formation higher order silanes gas, the problem reducing film quality, utilizing the film that the present invention is formed owing to damage is little, quality is high, therefore, its conversion efficiency is the highest.

Description

Form the vacuum equipment of photoelectric device film

Technical field

The present invention relates to technical field of vacuum plating, particularly a kind of formation photoelectric device film Vacuum equipment.

Background technology

Nearly all electronics devices such as semiconductor integrated circuit, solar cell, liquid crystal display Mostly by the thin-film integration of very thin thickness in part.The characteristic of this film decides electronic device Characteristic.In order to not damage lower film, when forming this film, it is desirable to temperature 500 DEG C with Under, especially with glass, the device of plastic base, technological temperature requires below 300 DEG C, Therefore, when adding hot gas, it is impossible to the distance of distance substrate is the nearest, it is impossible to make the temperature of substrate Du Taigao, otherwise can cause substrate to produce the problems such as stress deforms, it is often more important that meeting Because temperature the highest generation device property changes, therefore, the equipment forming device seems the heaviest Want.

High-quality, film deposition techniques and the equipment of high speed are to realize high-performance, low cost Manufacture in indispensable key element in various thin-film device, particularly in electrooptical device, During representative silicon film solar batteries manufactures, it is desirable to silicon thin film have high-quality, Can complete at high speed to make, requirement simultaneously can deposit film over a large area and to have There is high efficiency.

Up to now, when forming semiconductor devices in photoelectric device, the equipment of use typically makes With plasma enhanced chemical vapor deposition (being called for short PECVD) equipment, PECVD is in decompression Under the state of about 100Pa, unstrpped gas is in plasma, with accelerated electronics phase Shock is allowed to decompose.It is to say, gas is in the rarefaction of air three dimensions of vacuum, By collision point-to-point between gas molecule and electronics, form film.

Substantially divide for known silicon thin film low temperature preparation method and made by PECVD , it is mainly used in the formation of hydrogenation non crystal silicon film, polycrystal silicon film.

In pecvd, in order to realize high speed film forming, by increasing plasma electric power, promote Silane gas and the decomposition of hydrogen, plasma electric power to be increased, nothing more than being raising plasma In electron temperature Te (plasma potential Vp and Te be in direct ratio increase the most therewith), On the contrary, increase the ionic bombardment to film surface, increase the formation speed generating SiH2, Thus, promote the generation of higher order silanes, be eventually promoting the generation of powder, said Higher order silanes, represent with the gas molecule formula of SinHm, n at most can rise to 5.But, It is not to say that and there is not the SinHm gas molecule after n rises to more greatly.When depositing in gas SiH2 gas molecule generation polymerisation after, particularly in plasma, if make just from If son and negative charged molecule are repeated merging reaction, tens of nm grade size can be generated In bunch or more than the particle (referred to as powder) of this size.Certainly, these bunches of generation And powder is for high-quality film, it is a kind of unfavorable factor, can not get high-quality Film, influence whether the performance of device.

The method replacing increase plasma electric power is also improved the side of plasma excitation frequency number Method, uses the frequency higher than VHF, reduces between ion by reducing plasma potential energy Vp Mutually clash into, raising amorphous silicon hydride, the high efficiency of crystalline membrane are had certain effect Silicon metal to be formed needs sufficient hydrogen atom, but, no matter use which VHF frequency, As long as reaching certain rate of film build, being finally also difficult to avoid that and increasing plasma electric power, therefore, Also it is not fee from above-mentioned problem to occur.Accordingly, as not improving plasma electric power, raising The method of hydrogen atom is improved the dilution factor of hydrogen atom, namely increases the gas of H2/SiH4 Flow, but, so can reduce the dividing potential drop of SiH4 gas, on the contrary with the purpose of high speed film forming Run in the opposite direction, finally, plasma electric power, the decomposition of promotion SiH4 gas must be improved, with Sample, it is also difficult to avoid above-mentioned problem.As increasing plasma electric power, reduce plasma key The method clashed into is to improve thin film deposition pressure, but, after once deposition pressure improves, meeting Because of the increase of molecular density, causing reaction to generate higher order silanes, this is also to cause the falls such as dust The reason of low film quality, therefore, it is relatively difficult for will solving this problem.

It addition, Cat-CVD method is also under pressure reduction space state, molecular raw material gas with Clashed into mutually by the solid material surface of fine and close atomic building, utilize haptoreaction to be decomposed to form thin Film.That is Cat-CVD method is the shock of point and face.Therefore, gas in Cat-CVD method It is (general that body molecular breakdown efficiency, the i.e. utilization ratio of unstrpped gas are far longer than PECVD Between 5 times to 10 times).Only this point, consumes big big face manufacturing unstrpped gas During long-pending solar cell and liquid crystal display manufacture, tool has very important significance.Due to integrated The decomposition of film, the free base unit weight of generation is very big, therefore, it is possible to increase film synthesis speed, Improve production efficiency.Owing to not utilizing plasma, therefore, it is, in principle, that do not exist The problem producing micro powder because of Ions Bombardment described in PECVD.

It addition, in Cat-CVD method, because the most not utilizing plasma, so, the most not Damage can be caused because of the ion pair substrate in plasma, also will not be owing to electric charge reason be to lower floor Device damages.Therefore, Cat-CVD method be mainly used in semiconductor devices making and by In worry electric charge too much in next layer of insulator can more hurtful ultra tiny silicon integrated In circuit production.

In Cat-CVD method, owing to not using plasma, do not exist State plasma bombardment problem, seldom produce powder, owing to promoting the generation of hydrogen atom, Therefore, it is possible to produce crystal silicon film with comparalive ease.From principle in terms of extensive deposition On say, being also not limited, therefore, in recent years, this technology is suddenly by the height of industry Degree is paid close attention to.But, due to the radiation of hot catalyst, it is impossible to avoid improving substrate temperature, it is impossible to It is readily formed high-quality stabilizing films.Further, since divided by the heating of hot catalyst Solve, be difficult to avoid producing silicon atom.But, silicon atom is to be not intended in high quality silicon film The composition occurred, and therefore, it is very difficult to form high-quality crystal silicon film at a high speed.

Utilize the film that PECVD makes, due in unstrpped gas containing hydrogen atom 10at% with On, film can be made to die down, particularly can cause characteristic attenuation.Even and if Cat-CVD method makes By identical unstrpped gas, only exist in the film less than 3at% hydrogen atom. due to this The film that reason makes is the finest and close, has chemically-resistant, suppresses the characteristic of the infiltration such as water, impurity, The film formed occupy good characteristic as surface protection film.It addition, profit is in this way The film made, its characteristic is highly stable.

Cat-CVD (Catalytic Chemical Vapor Deposition=catalyst chemistry gas Deposition mutually) method, in indispensable key element in thin-film device, particularly at electrooptical device In, during representative silicon film solar batteries manufactures, it is desirable to silicon thin film has high-quality Amount, can complete at high speed make, requirement simultaneously can deposit film over a large area and High efficiency to be had.It addition, in the method, it is greatly promoted the life of hydrogen atom Become, therefore, there is the advantage of the Si film being readily formed crystallization.

But, reason is due to heat radiation, improves the temperature of film surface, promotes height Rank silane generates, and at present, does not the most establish the method fundamentally improving this phenomenon.Former Because being after SiH4 gas utilizes catalyst to decompose, generate H atom and Si atom, although H Atom is especially suitable for forming silicon thin film, it can however not expect to utilize Si atom to form high-quality Silicon thin film because Si atom is in the gas phase, can react with H, the H2 etc. in gas, Generate SiH and SiH2 free radical, will not expect equally to form high-quality silicon thin film.For Above-mentioned problem, in the patent of Japanese patent application No. 2000-130858, disclose including Fill the basic structure of the cathode type PECVD device of hot catalyst.It is to say, at plasma CVD In equipment, flow through position producing the gas on the upside of isoionic region, arrange by tungsten or tantalum The catalyst (heated filament) constituted on metal, or flow through position at different gas and arrange different Hot catalyst or only flow through position at hydrogen hot catalyst is set, then after gas shower Carry out gas mixing.But, there is also and guarantee uniform film thickness distribution, control activity hydrogen The problems such as the method for density, partition heat radiation method need to solve.

As it has been described above, in thin film photovoltaic device, consider from large-area applications, such as: many Crystal silicon and microcrystalline silicon film the phototube such as show in solar cell, giant-screen plane, at present Using and study more preparation method and be mainly PECVD technique, this technology is at non-crystalline silicon (a-Si:H) preparation aspect is full-fledged, and advantage is to carry out extensive deposition, film forming ratio More uniform, but deposit generation ion dam age at high power and be unfavorable for film crystallization, thin film deposition The shortcoming that speed ratio is relatively low.For PECVD, hot-wire chemical gas-phase deposition (HWCVD) Being a kind of relatively new technology, high temperature heated filament makes reacting gas fully decompose, sedimentation rate Height, simultaneously, it is provided that a large amount of high-energy atom H, beneficially crystallization.But, in sedimentation rate In the case of too high, film formed Microfocus X-ray tube, the most easily aoxidizes.

Summary of the invention

The present invention is directed to be difficult at present form long-life, conversion effect at high speed on large substrate What rate decayed little, high-quality, the problem of homogenization film and provided a kind of forms photoelectric device The vacuum equipment of film.

For reaching above-mentioned functions, present invention provide the technical scheme that

A kind of vacuum equipment forming photoelectric device film, including multiple vacuum cavities, at least Negative electrode and anode, described negative electrode and described anode it is provided with in having 2 described vacuum cavities Being oppositely arranged in parallel, connecting between described negative electrode, described anode has high frequency electric source, described the moon A plurality of injection well for carrying film forming gas and the steam vent of more than 2 it is provided with on extremely, Being provided with snorkel in each described injection well, described snorkel is carried on the back with being arranged on described negative electrode The cylinder of supplying gas in face is connected, described in cylinder of supplying gas for carrying diluent gas, described in supply gas in cylinder Being provided with the hot catalyst for heating diluent gas, the length of described snorkel does not surpasses Crossing the air supply opening of described injection well, two kinds of gases mix near described air supply opening.

Preferably, described anode and described negative electrode are erect in described vacuum cavity and are oppositely arranged, Substrate is placed near the tow sides of described anode.

Preferably, the air supply opening of described injection well is less than described exhaust to the distance of described substrate The exhaust outlet in hole is to the distance of described substrate.

Preferably, the temperature of described hot catalyst is between 300 DEG C～2000 DEG C.

Preferably, a plurality of described injection wells are evenly provided on described negative electrode, two The adjacent distance between injection well is not more than 8mm.

Preferably, the total gas flow rate of described injection well always flows more than the gas of described steam vent Amount.

Preferably, the temperature of described hot catalyst is between 500 DEG C～1900 DEG C.

Preferably, the distance between two adjacent described injection wells is not more than 6mm.

Preferably, described negative electrode is fixedly mounted in described vacuum cavity, and described anode is fixed On dolly, between described dolly and described vacuum cavity, it is provided with line slideway.

Preferably, the described vacuum equipment forming photoelectric device film also includes that a vacuum is removed Fortune chamber, is provided with conveying robot in described vacuum carrying chamber, described vacuum cavity is with described Vacuum carrying chamber is connected.

The beneficial effects of the present invention is:, owing to utilizing hot catalyst to heat diluent gas, activate, Decompose gas, defined more H atom, decreased owing to PECVD heating film forming Gas forms higher order silanes gas, and the problem reducing film quality, owing to the present invention is at negative electrode The back side is provided with the diluent gas of built-in heated filament and supplies gas cylinder, and it is overheated to form glass substrate Problem, non-SI non-C gas and film forming gas form film in air supply opening hybrid reaction, and After being reacted by exhaust outlet in time, gas is discharged, and reduces the formation of higher order silanes, especially It is to be able to quickly form silicon metal or microcrystalline silicon film, production efficiency has been significantly increased, Utilizing the film that the present invention is formed owing to damage is little, quality is high, therefore, its conversion efficiency is also High；It addition, available multiple vacuum cavities form different film respectively, by reasonably taking Join, the productivity effect of product can be increased substantially.

Accompanying drawing explanation

Fig. 1 is the structural representation of the present invention；

Fig. 2 is the generalized section of vacuum cavity Anodic and negative electrode；

Fig. 3 is the structural representation arranging feeding pneumatic on negative electrode.

Detailed description of the invention

The present invention is further elaborated for 1 to accompanying drawing 3 below in conjunction with the accompanying drawings:

A kind of vacuum equipment forming photoelectric device film as depicted in figs. 1 and 2, including 7 100,1 transport passage for transporting 603 of individual vacuum cavity and 1 vacuum carrying chamber 602.Vacuum chamber Body 100 and transport passage for transporting 603 are fixed with vacuum carrying chamber 602 and are connected.Vacuum carrying chamber 602 Middle part be provided with conveying robot 601, conveying robot 601 is respectively to multiple vacuum cavities Transferring substrates 103 in 100；The two ends of transport passage for transporting 603 respectively connected one and keep internal Vacuum side door 606 that vacuum is not lowered and air side door 607, vacuum side door 606 and big Gas side door 607 is during carrying substrate 103, it is impossible to open simultaneously, in otherwise reducing Portion's vacuum, affects product quality.

As in figure 2 it is shown, be at least provided with negative electrode 102 and sun in 2 vacuum cavities 100 Pole 101, negative electrode 102 and anode 101 are oppositely arranged in parallel, negative electrode 102, anode 101 it Between connect have high frequency electric source, negative electrode 102 is provided with a plurality of for carrying film forming gas Injection well 105 and the steam vent 107 of more than 2, be provided with in each injection well 105 and supply gas Pipe 401, snorkel 401 is connected with the cylinder 402 of supplying gas being arranged on negative electrode 102 back side, send Inflator 402 is used for carrying diluent gas, is provided with hot catalyst 403 in cylinder 402 of supplying gas.At this In embodiment, anode 101 and negative electrode 102 are erect in vacuum cavity 100 and are oppositely arranged, Substrate 103 is placed near the tow sides of anode 101, and anode 101 is fixedly mounted on little On car 009, dolly 009 drives substrate 103 in vacuum cavity 100, transport passage for transporting 603 And move between vacuum carrying chamber 602.

The gas that the present invention uses is roughly divided into two kinds, and one is containing Si or C in molecular formula Si or C series raw material gas, such as: SiH 4, Si 2H 6, Si 3H 8, SiF 4, SiCl 4, SiCl 2H 2 and do not contain Si or C non-Si or C series diluent gas, As: the gas such as H 2, N 2, He, Ar, Ne, Xe, both gas is individually to send Entering, the former contains the film forming gas of Si or C of Si or C, below with SiH 4 as representative, Do not contain the diluent gas of non-Si or the C series of Si or C, below with H2 as representative, enter Row explanation.The hot catalyst 403 that diluent gas is arranged in utilizing the cylinder 402 of supplying gas carries out heating, Activate, then, after mixing in plasma space 111 with the series film forming gas containing Si or C, It is rapidly formed film.It is to say, make film forming gas become enhancement mode under high frequency situation Plasma, after utilizing hot catalyst 403 to heat, decomposing diluent gas, mixes at air supply opening, Even therefore under high speed membrance casting condition, it is also possible to be easily formed crystallinity height, matter Measure excellent crystal silicon film.

Specifically: H2 is heated by individually freely controlling hot catalyst 403, activates, Under high frequency condition, form isoionic gas with the SiH4 individually freely controlled to mix, thus Avoid and utilize hot catalyst 403 to produce the free radical undesirably generated, due to this hot catalyst 403 Heating is that the cylinder 402 of supplying gas arranged at negative electrode 102 back side is carried out, and can avoid hot catalyst 403 Directly it is radiated on substrate 103, thus avoids the Upgrade Problem of film surface temperature, also Inhibit the side effect high-order silicon that i.e. gas heating effect produces in gas of hot catalyst 403 Alkane reacts, because the intercalation reaction of SiH2 gas, the reaction generating higher order silanes is that heating is anti- Answer, and gas heating effect can make gas temperature rise, to generating higher order silanes, there is suppression Effect.

On negative electrode 102, the air supply opening 1051 of injection well 105 is less than row to the distance of substrate 103 The exhaust outlet 1071 of pore 107 is to the distance of substrate 103, by using close to substrate 103 Air supply opening 1051 supply and distance substrate 103 exhaust outlet 1071 farther out is vented, real Generate homogeneous film thickness, the film of uniform film quality on large-area substrates 103 now.Utilize this Bright, it is possible to high speed, high-quality landform on the substrate 103 that the length of side is 1400 × 1100 meters Uniformly film thickness distribution, the film of uniform film quality.

Hot catalyst 403 at least surface is made up of metal material, and this metal material is by Gao Rong One in the metals such as the tantalum of point, tungsten, rhenium, osmium, iridium, niobium, molybdenum, ruthenium, platinum is main Composition is constituted, and hot catalyst 403403 generally uses thread metal material.Additionally, when heat is touched When matchmaker 403 deposits film on the metal material, if containing dopant material in hot catalyst 403 Time, before thin film deposition, utilize the temperature higher than depositing temperature in advance, to hot catalyst 403 Carry out a few minutes the pre-heat treatment, it is possible to be effectively reduced impurity.

Hot catalyst 403 is arranged on diluent gas and supplies gas in cylinder 402, at the two of cylinder 402 of supplying gas End, is provided with insulated enclosure lid, and hot catalyst 403, through sealing the center covered, seals lid other The air admission hole of conveying non-Si or non-C diluent gas is set, for hollow state in cylinder 402 of supplying gas.

Although cylinder 402 is horizontally set it should be noted that supply gas in Fig. 3, but, In actual use, we can also use longitudinally disposed as required.

The snorkel 401 of conveying diluent gas is arranged on the centre of injection well 105, snorkel Can be by molecular formula contain the film forming gas of Si or C around 401, snorkel 401 is long Degree, less than air supply opening 1051, is so more beneficial for gas mixing.

Although above-mentioned non-C, non-Si gas be utilize the heating of hot catalyst 403 after, deliver to etc. from In subspace 111, but, can decompose after a part of gas is heated, activate, this with The temperature of hot catalyst 403 is in direct ratio.Such as, hydrogen gas despite pressure considerations, but It is, when the temperature of hot catalyst 403 is more than about 1000 DEG C, because decomposition reaction generation hydrogen is former Son.This hydrogen atom is as it has been described above, have the effect promoting crystallization.Even if hot catalyst 403 Temperature when the temperature conditions less than 1000 DEG C, the hydrogen atom of generation be not it is obvious that knot As crystalline substance degree facilitation effect is the most hopeless good, but, by using hot catalyst 403 Side effect, it may be assumed that by the heating to gas, it is possible to the generation that suppression produces higher order silanes is anti- Should, also the high-quality amorphous silicon hydride of formation is had certain effect.Hot catalyst 403 Temperature is minimum also must reach more than 300 DEG C, is more desirable to more than 500 DEG C, to obtain preferably Effect.By the temperature of hot catalyst 403 is risen to more than 500 DEG C, gas heating effect meeting Clearly.It addition, maximum temperature is wished below 2000 DEG C, preferably below 1900 DEG C. At a temperature of more than 1900 DEG C, impurity gas can be produced from hot catalyst 403 and circumferential component Body, the problem such as evaporation that also can produce hot catalyst 403 material self.

In this enforcement example, negative electrode 102 is provided with multiple injection well 105, at injection well Multiple steam vent 107 it is provided with equably between 105.Between adjacent injection well 105 away from From within 8mm, if greater than 8mm, formed between the air supply opening 1051 of injection well 105 Concentration electric field junction will die down, the plasma therefore produced will be more weak, it is difficult to Ensure to form uniform film on a substrate 103.In order to obtain more uniform film, phase The adjacent distance between injection well 105 is preferably within 6mm.

In the present invention, near the anode 101 erectting setting, the little of substrate 103 is carried Car from the entrance of vacuum cavity 100 enter vacuum cavity 100 deeply located after because positive Pole 101 is erect and is arranged, and anode surface and gravity direction are almost parallel.When substrate 103 uses glass During glass substrate, owing to glass substrate can be carried under the situation erect, therefore glass Substrate not only will not produce down curved phenomenon, and convenient to operate.

Owing to the anode 101 of the present invention and negative electrode 102 use erect-type setting, therefore one Two substrates 103 can be set on anode 101, be traditional 2 times that are horizontally disposed with number, 2 anodes 101 are set 4 plate bases 103 just can be set, along with anode 101 arranges number Increase, the quantity of substrate 103, can at double compared with the number being horizontally disposed with substrate 103 Ground improves, and therefore, setting arranges the mode of substrate 103 can be significantly increased production effect Rate.

Being provided with heater 104 in anode 101, heater 104 can will be arranged on anode The substrate 103 of the vicinity of 101 utilizes radiation heating, makes substrate 103 keep stationary temperature, The heater 104 arranged in anode 101 utilizes temperature controller (not marking in figure) to carry out Controlling, temperature controller is according to the detection temperature to substrate 103, the temperature to heater 104 Degree is controlled, and makes the temperature of substrate 103 be maintained in certain temperature range, so can Guarantee stablizing of film-forming temperature, advantageously form homogeneous film thickness and the film of uniform film quality.Base Plate 103 utilizes substrate fixture 109 to be fixed by substrate 103.

Air supply opening 1051 is less than exhaust outlet 1071 apart from substrate 103 apart from the distance of substrate 103 Distance.Owing to film forming gas to react between the gas in vacuum cavity 100, Film to be generated, therefore, the gas flow of injection well 105 is greater than row The gas flow of pore 107, air supply opening 1051 end face is the least, say, that all The area of air supply opening 1051 is greater than the area of exhaust outlet 1071, so could keep stable Gas reaction, simultaneously by reasonably configuring exhaust pump, it is to avoid energy waste.

In this enforcement example, the two or more exhaust that negative electrode 102 is arranged uniformly over the surface Hole 107, steam vent 107 communicates with exhaust gas circuit 108, and equally, the surface of negative electrode 102 is equal Being provided with multiple injection well 105, injection well 105 communicates with feeding pneumatic 106 evenly, when this After invention utilizes vavuum pump (not marking in figure) to be vacuumized by vacuum cavity 100, at Gao Zhen Under in the environment of sky, between negative electrode 102 and anode 101, apply high frequency electric source, define Electric field, can form electric field concentration phenomenon effect in the end of the air supply opening 1051 of negative electrode 102, Under electric field action, electronics and gas molecule collision, diluent gas utilizes hot catalyst 403 to add After heat gas separate, mix with film forming gas air supply opening 1051 near, formation generation grade from The starting point of son, the heated excitation of the gas of feeding, plasma space 111 produces aura Electric discharge, deposits thin film on a substrate 103.

Deposit film time, due to diluent gas such as: hydrogen be heated catalyst 403 heating and Decompose, within a very short time, film forming gas can be activated such as: silane, it is possible in the short time Interior formation plasma, the pressure reduction of air supply opening 1051 is more than the pressure reduction in plasma space 111, Meanwhile, exhaust outlet 1071 and vacuum pump for vent (figure on distance substrate 103 negative electrode 102 farther out Not shown in) be connected, therefore, the gas that reacted gas can newly be sent in time is arranged It is extruded into the side that distance substrate 103 is remote, say, that the gas after reaction can be by time Exclusion, to the vicinity of the exhaust outlet 1071 of negative electrode 102, finally can be vacuum exhausted pump by row Gas gas circuit 108 processes from the timely device for transferring of outlet accordingly.This structure Negative electrode 102 is it can be avoided that the secondary response again of gas such as SiH2 etc. and silane gas after Fan Ying, raw Become higher order silanes (SinHm) gas.Inhibit the reaction repeatedly of gas after reaction, reduce or Eliminate undesirable higher order silanes etc. in generation film and form film, reduce due to Powder that higher order silanes etc. generate or film, the quality of the film of raising, it is to avoid due to height The photo attenuation phenomenon that rank silane etc. causes such that it is able to improve electrooptical device further Conversion efficiency.In order to improve quality of forming film further, air supply opening 1051 exceeds electrode.

Although utilizing at least 2 exhaust outlets 1071 can exclude gas after reaction, but, In order to make substrate 103 surface there is uniform gaseous mass, or uniform gas as much as possible Distribution, gets rid of one of reason being to ensure that product quality in time by gas after reaction equably, Therefore, multiple exhaust outlet 1071 is preferably set on negative electrode 102 equably.Exhaust outlet 1071 Between distance preferably within 8cm, be more desirable within 6cm.

Due to the maximization of product, it is unfavorable for the independent carrying of substrate 103, in order to side Just substrate 103 is arranged near anode 101, in the present embodiment, anode 101 is solid Dingan County is contained on dolly 009, is integrally forming with dolly 009, and negative electrode 102 is fixedly installed on In vacuum cavity 100, the bottom of dolly 009 is provided with line slideway 112, makes dolly 009 Can move between vacuum cavity 100 is inside and outside.So it is easy to from vacuum cavity 100 outside Substrate 103 is arranged near anode 101, in process of production, typically by manipulator, Or substrate 103 sent into dolly 009 by special loading machine.In order to prevent to substrate 103 The film on surface or substrate 103 surface brings damage, in the present invention, and substrate 103 and anode The most directly contact between 101, but utilize the substrate fixture that anode 101 top and the bottom arrange 109 fix substrate 103, thus decrease some unnecessary contacts, it is therefore prevented that drawing of product The defects such as wound.

The internal fixed negative electrode 102 of vacuum cavity 100, the feeding pneumatic 106 on negative electrode 102 With exhaust gas circuit 108 respectively to equipment outside corresponding gas circuit connect, exhaust gas circuit 108 and row Gas vacuum valve (not shown) is connected, after dolly 009 enters in vacuum cavity 100, Substrate 103 is in relative and parastate with negative electrode 102, arranges in utilizing anode 101 Heater 104 radiates, and makes substrate 103 be heated equably, and anode 101, negative electrode 102 are respectively It is connected to high frequency electric source, under vacuumizing state, carries out thin film deposition.

On the air inlet of the feeding pneumatic 106 of negative electrode 102, it is provided with multiple gas access, Being connected at least 2 wireway (not shown)s, film forming desired gas is delivered to by wireway Negative electrode 102, finally sprays from air supply opening 1051.

Embodiment described above, the simply preferred embodiments of the present invention, not limit the present invention Practical range, therefore all according to the structure described in scope of the present invention patent, feature and principle The equivalence change done or modification, in the range of all should being included in present patent application.

Claims (10)

1. form a vacuum equipment for photoelectric device film, including multiple vacuum cavities, its It is characterised by: be at least provided with negative electrode and anode in 2 described vacuum cavities, described Negative electrode and described anode are oppositely arranged in parallel, and connecting between described negative electrode, described anode has height Frequency power, described negative electrode is provided with a plurality of injection well for carrying film forming gas and 2 Individual above steam vent, is provided with snorkel in each described injection well, described snorkel with The cylinder of supplying gas being arranged on described cathode back is connected, described in supply gas cylinder for carrying carrier gas Body, described in supply gas and be provided with the hot catalyst for diluent gas is heated in cylinder, described The length of snorkel is less than the air supply opening of described injection well, and two kinds of gases are at described air supply opening Neighbouring mixing.

2. the vacuum equipment forming photoelectric device film as claimed in claim 1, its feature It is: described anode and described negative electrode are erect in described vacuum cavity and be oppositely arranged, substrate It is placed near the tow sides of described anode.

3. the vacuum equipment forming photoelectric device film as claimed in claim 2, its feature It is: the distance of the air supply opening of described injection well to described substrate is less than the row of described steam vent Gas port is to the distance of described substrate.

4. the vacuum equipment forming photoelectric device film as claimed in claim 1, its feature It is: the temperature of described hot catalyst is between 300 DEG C～2000 DEG C.

5. the vacuum equipment forming photoelectric device film as claimed in claim 1, its feature Being: a plurality of described injection wells are evenly provided on described negative electrode, two adjacent Distance between injection well is not more than 8mm.

6. the vacuum equipment forming photoelectric device film as claimed in claim 1, its feature It is: the total gas flow rate of described injection well is more than the total gas flow rate of described steam vent.

7. the vacuum equipment forming photoelectric device film as claimed in claim 4, its feature It is: the temperature of described hot catalyst is between 500 DEG C～1900 DEG C.

8. the vacuum equipment forming photoelectric device film as claimed in claim 5, its feature It is: the distance between two adjacent described injection wells is not more than 6mm.

9. the vacuum forming photoelectric device film as described in claim 1 to 8 any one Equipment, it is characterised in that: described negative electrode is fixedly mounted in described vacuum cavity, described sun Pole is fixed on dolly, is provided with line slideway between described dolly and described vacuum cavity.

10. the formation photoelectric device film as described in claim 1 to 8 any one is true Null device, it is characterised in that: the described vacuum equipment forming photoelectric device film also includes One vacuum carrying chamber, is provided with conveying robot, described vacuum chamber in described vacuum carrying chamber Body is connected with described vacuum carrying chamber.