CN104159051B - 图像传感器以及包括该图像传感器的装置 - Google Patents

图像传感器以及包括该图像传感器的装置 Download PDF

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Publication number
CN104159051B
CN104159051B CN201410097512.4A CN201410097512A CN104159051B CN 104159051 B CN104159051 B CN 104159051B CN 201410097512 A CN201410097512 A CN 201410097512A CN 104159051 B CN104159051 B CN 104159051B
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charge
signal
storage node
supplied
storage
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Chinese (zh)
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CN104159051A (zh
Inventor
王一兵
艾瑞克·弗森
伊利亚·奥夫桑尼科夫
朴允童
闵桐基
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
CN201410097512.4A 2013-03-15 2014-03-17 图像传感器以及包括该图像传感器的装置 Active CN104159051B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US13/832,289 2013-03-15
US13/832,289 US8994867B2 (en) 2013-03-15 2013-03-15 Image sensor, operating method thereof, and device including the image sensor
KR10-2013-0035437 2013-04-01
KR1020130035437A KR102074949B1 (ko) 2013-03-15 2013-04-01 이미지 센서, 및 이의 동작 방법

Publications (2)

Publication Number Publication Date
CN104159051A CN104159051A (zh) 2014-11-19
CN104159051B true CN104159051B (zh) 2019-08-06

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US (1) US8994867B2 (ko)
KR (1) KR102074949B1 (ko)
CN (1) CN104159051B (ko)

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CN112601981B (zh) * 2018-09-07 2023-07-18 深圳帧观德芯科技有限公司 辐射探测器
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US11496703B2 (en) 2019-07-25 2022-11-08 Trustees Of Dartmouth College High conversion gain and high fill-factor image sensors with pump-gate and vertical charge storage well for global-shutter and high-speed applications
CN110278397B (zh) * 2019-07-26 2021-04-13 北京思比科微电子技术股份有限公司 一种用于cmos图像传感器的低功耗列电路
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KR20210123602A (ko) * 2020-04-03 2021-10-14 에스케이하이닉스 주식회사 이미지 센싱 장치 및 그의 동작 방법
KR20220125025A (ko) 2021-03-04 2022-09-14 에스케이하이닉스 주식회사 이미지 센싱 장치

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Also Published As

Publication number Publication date
KR20140113225A (ko) 2014-09-24
US8994867B2 (en) 2015-03-31
US20140267859A1 (en) 2014-09-18
KR102074949B1 (ko) 2020-02-07
CN104159051A (zh) 2014-11-19

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