CN104157727A - 太阳能电池高散热性背电极材料制备及测试方法 - Google Patents

太阳能电池高散热性背电极材料制备及测试方法 Download PDF

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CN104157727A
CN104157727A CN201410321136.2A CN201410321136A CN104157727A CN 104157727 A CN104157727 A CN 104157727A CN 201410321136 A CN201410321136 A CN 201410321136A CN 104157727 A CN104157727 A CN 104157727A
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electrode material
back electrode
solar battery
silicon chip
heat
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宫泽吉辉
杜志攀
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TOYAL ZHAOQING Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441Electrode arrangements specially adapted for back-contact solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/547Monocrystalline silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

太阳能电池高散热性背电极材料制备及测试方法,高散热性背电极材料为太阳能电池的硅片背面电极材料与陶瓷材质散热粉材料的混合材料,测试方法如下:a)将陶瓷材质散热粉材料添加到硅片背面电极材料中进行混合,并制成混合料;b)将混合料在单结晶硅片背面进行丝网印刷和烧结,形成太阳能电池片,并将4片太阳能电池片制作成组件;c)将组件放到户外接受阳光照射,一定时间后,对组件测试表面温度和发电效率。本发明的优点是:本发明是利用在太阳能电池中的硅片背面电极材料中添加散热粉材料,而达到在受日光照射时可抑制散热,不受温度影响,维持高水平的发电效率。

Description

太阳能电池高散热性背电极材料制备及测试方法
技术领域
本发明涉及太阳能电池技术领域,具体涉及太阳能电池高散热性背电极材料制备及测试方法。
背景技术
目前,现有的太阳能电池组件受到直射日光照射而发电,但同时会由于受照射而不断升温。发电效率又会受温度影响而变化,温度越高,发电效率越低。并且,为了维持太阳能电池组件有持续高发电效率,不受温度升高的影响,现有的方法是在组件表面用冷水降温,在组件上设置冷风机降温,或者使用白色背板来降低反射的方法来避免温度上升。
但是,对太阳能电池组件利用冷水或冷风机降温对于长期使用成本方面,构造以及设置方面诸有不利。利用白色背板来降低反射的方法在目前也不能完全解决组件升温的问题。
发明内容
本发明的目的就是针对目前上述对太阳能电池组件利用冷水或冷风机降温对于长期使用成本方面,构造以及设置方面诸有不利。利用白色背板来降低反射的方法在目前也不能完全解决组件升温的问题之不足,而提供太阳能电池高散热性背电极材料制备及测试方法。
本发明高散热性背电极材料为太阳能电池的硅片背面电极材料与陶瓷材质散热粉材料的混合材料,测试方法如下:
a)、将陶瓷材质散热粉材料添加到硅片背面电极材料中进行混合,并制成混合料;
b)、将混合料在单结晶硅片背面进行丝网印刷和烧结,形成太阳能电池片,并将4片太阳能电池片制作成组件;
c)、将组件放到户外接受阳光照射,一定时间后,对组件测试表面温度和发电效率。
陶瓷材质散热粉材料为AlN、SiO2、Al2O3中的一种或其任意组合的混合物。
本发明的优点是:本发明是利用在太阳能电池中的硅片背面电极材料中添加散热粉材料,而达到在受日光照射时可抑制散热,不受温度影响,维持高水平的发电效率。 
具体实施方式
本发明高散热性背电极材料为太阳能电池的硅片背面电极材料与陶瓷材质散热粉材料的混合材料,测试方法如下:
a)、将陶瓷材质散热粉材料添加到硅片背面电极材料(即Alsolar电极材料,由东洋铝业株式会社制造)中进行混合,并制成混合料;
b)、将混合料在单结晶硅片背面进行丝网印刷和烧结,形成太阳能电池片,并将4片太阳能电池片制作成组件;
c)、将组件放到户外接受阳光照射,一定时间后,对组件测试表面温度和发电效率。
陶瓷材质散热粉材料为AlN、SiO2、Al2O3中的一种或其任意组合的混合物。
作为陶瓷材导热系数分别为 AlN:170W 、AL2O3:30W 、SiO2:1.5W。
表中的测试1-4是AlN,测试5-8是AL2O3,测试9-12是SiO2,分别按照不同比例的做的测试。
从各组数据可知导热系数越高的陶瓷材,表面温度越低。并且,散热粉材料的添加量越多,表面温度也越低。
但是,大部分的发电效率并没有由于温度的降低而增高。这是由于在太阳能电池片中,散热粉添加物是作为一种杂质,相反在其中有阻碍半导体化形成的不好的作用。
但是在测试数据中测试1,2的结果显示和比较对象相比发电效率有所提高,所以认为由于温度的降低反而提高了发电效率。
本发明是由于一定量的散热粉的添加,从而提高了发电效率。
在此基础,对散热粉添加物的各种组合进行了测试。
测试例 Alsolar ALN(%) Al2O3(%) SiO2(%) 表面温度(℃) 发电效率(%)
比较对象 100 0 0 0 69.8 17.5
测试13 98 1 1 0 69.1 17.3
测试14 98 0 1 1 68.2 16.9
测试15 95 3 2 0 67.7 17.7
测试16 95 2 3 0 69.1 17.2
测试17 93 3 3 1 64.9 16.5
测试18 96 2 2 0 67.8 17.4
测试19 94 2 2 2 67.3 16.4
以上数据中测试13,15的数据更明确的显示了ALN,AL2O3的混合系列的发电效率最高。

Claims (2)

1.太阳能电池高散热性背电极材料制备及测试方法,其特征在于高散热性背电极材料为太阳能电池的硅片背面电极材料与陶瓷材质散热粉材料的混合材料,测试方法如下:
a)、将陶瓷材质散热粉材料添加到硅片背面电极材料中进行混合,并制成混合料;
b)、将混合料在单结晶硅片背面进行丝网印刷和烧结,形成太阳能电池片,并将4片太阳能电池片制作成组件;
c)、将组件放到户外接受阳光照射,一定时间后,对组件测试表面温度和发电效率。
2.根据权利要1所述的太阳能电池高散热性背电极材料制备及测试方法,其特征在于陶瓷材质散热粉材料为AlN、SiO2、Al2O3中的一种或其任意组合的混合物。
CN201410321136.2A 2014-07-07 2014-07-07 太阳能电池高散热性背电极材料制备及测试方法 Pending CN104157727A (zh)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1877864A (zh) * 2006-06-30 2006-12-13 谭富彬 硅太阳能电池背场铝导电浆料组成及制备方法
CN101246760A (zh) * 2008-02-27 2008-08-20 中南大学 基于半导体芯片粘结用低温烧结型导电浆料及其制备工艺
TW201422559A (zh) * 2012-12-11 2014-06-16 Advanced Electronic Materials Inc 無鉛奈米導電漿材料

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1877864A (zh) * 2006-06-30 2006-12-13 谭富彬 硅太阳能电池背场铝导电浆料组成及制备方法
CN101246760A (zh) * 2008-02-27 2008-08-20 中南大学 基于半导体芯片粘结用低温烧结型导电浆料及其制备工艺
TW201422559A (zh) * 2012-12-11 2014-06-16 Advanced Electronic Materials Inc 無鉛奈米導電漿材料

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