CN104157718A - 一种高速硅基光探测器 - Google Patents
一种高速硅基光探测器 Download PDFInfo
- Publication number
- CN104157718A CN104157718A CN201310179786.3A CN201310179786A CN104157718A CN 104157718 A CN104157718 A CN 104157718A CN 201310179786 A CN201310179786 A CN 201310179786A CN 104157718 A CN104157718 A CN 104157718A
- Authority
- CN
- China
- Prior art keywords
- single crystal
- crystal layer
- type
- silicon single
- germanium silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 20
- 239000010703 silicon Substances 0.000 title claims abstract description 20
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 74
- 239000013078 crystal Substances 0.000 claims description 63
- 239000000377 silicon dioxide Substances 0.000 claims description 37
- 239000000758 substrate Substances 0.000 claims description 19
- 230000003287 optical effect Effects 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 abstract 7
- 239000000969 carrier Substances 0.000 abstract 2
- 230000004044 response Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310179786.3A CN104157718B (zh) | 2013-05-15 | 2013-05-15 | 一种高速硅基光探测器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201310179786.3A CN104157718B (zh) | 2013-05-15 | 2013-05-15 | 一种高速硅基光探测器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104157718A true CN104157718A (zh) | 2014-11-19 |
CN104157718B CN104157718B (zh) | 2018-08-28 |
Family
ID=51883173
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310179786.3A Active CN104157718B (zh) | 2013-05-15 | 2013-05-15 | 一种高速硅基光探测器 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104157718B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111416016A (zh) * | 2020-03-30 | 2020-07-14 | 西安交通大学 | 一种用于核辐射粒子探测的异质结晶体管探测器及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020030206A1 (en) * | 2000-09-08 | 2002-03-14 | Takahiro Takimoto | Photodetector with built-in circuit and method for producing the same |
JP2008544563A (ja) * | 2005-06-27 | 2008-12-04 | エヌエックスピー ビー ヴィ | 半導体デバイスおよびその製造方法 |
CN102054689A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管的制作方法 |
CN102064100A (zh) * | 2009-11-12 | 2011-05-18 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管的发射极制作工艺方法 |
CN102088029A (zh) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | SiGe BiCMOS工艺中的PNP双极晶体管 |
US20110156202A1 (en) * | 2009-12-31 | 2011-06-30 | Chiu Tzuyin | Parasitic Vertical PNP Bipolar Transistor in BICMOS Process |
-
2013
- 2013-05-15 CN CN201310179786.3A patent/CN104157718B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020030206A1 (en) * | 2000-09-08 | 2002-03-14 | Takahiro Takimoto | Photodetector with built-in circuit and method for producing the same |
CN1344030A (zh) * | 2000-09-08 | 2002-04-10 | 夏普公司 | 具有内建电路的光探测器及其生产方法 |
JP2008544563A (ja) * | 2005-06-27 | 2008-12-04 | エヌエックスピー ビー ヴィ | 半導体デバイスおよびその製造方法 |
CN102054689A (zh) * | 2009-11-05 | 2011-05-11 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管的制作方法 |
CN102064100A (zh) * | 2009-11-12 | 2011-05-18 | 上海华虹Nec电子有限公司 | SiGe异质结双极晶体管的发射极制作工艺方法 |
CN102088029A (zh) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | SiGe BiCMOS工艺中的PNP双极晶体管 |
US20110156202A1 (en) * | 2009-12-31 | 2011-06-30 | Chiu Tzuyin | Parasitic Vertical PNP Bipolar Transistor in BICMOS Process |
CN102117827A (zh) * | 2009-12-31 | 2011-07-06 | 上海华虹Nec电子有限公司 | BiCMOS工艺中的寄生垂直型PNP器件 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111416016A (zh) * | 2020-03-30 | 2020-07-14 | 西安交通大学 | 一种用于核辐射粒子探测的异质结晶体管探测器及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104157718B (zh) | 2018-08-28 |
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GR01 | Patent grant | ||
DD01 | Delivery of document by public notice | ||
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Addressee: Yuan Xiao Document name: Business Review letter |
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TR01 | Transfer of patent right |
Effective date of registration: 20230807 Address after: 200438 room 1011-4, building 2, No. 335, Guoding Road, Yangpu District, Shanghai Patentee after: SHANGHAI GUITONG SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 200437, 1st Floor, Comprehensive Building, No. 135 Yixian Road, Yangpu District, Shanghai Patentee before: Li Bing |
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Addressee: Yuan Xiao Document name: Notification of Qualified Procedures |