CN104157586A - Method of precisely positioning and analyzing repeated structure defects found by electron beam defect detection - Google Patents
Method of precisely positioning and analyzing repeated structure defects found by electron beam defect detection Download PDFInfo
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- CN104157586A CN104157586A CN201410390740.0A CN201410390740A CN104157586A CN 104157586 A CN104157586 A CN 104157586A CN 201410390740 A CN201410390740 A CN 201410390740A CN 104157586 A CN104157586 A CN 104157586A
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- repetitive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Abstract
The invention discloses a method of precisely positioning and analyzing repeated structure defects found by electron beam defect detection. The method comprises steps: the electron beam defect detection equipment is used for looking for repeated structure devices on chips with chip numbers on a wafer, and the found repeated structure devices are provided with repeated structure numbers; the minimal repeated structure for making up each repeated structure device is determined and minimal structure sequence numbers are set for all repeated structure devices; the electron beam defect detection equipment is used for looking for the abnormal minimal repeated structure through comparing chip data; the chip number, the repeated structure number and the minimal structure sequence number corresponding to the found abnormal minimal repeated structure are sent to focused ion beam analyzing equipment; and the focused ion beam analyzing equipment is used for moving the wafer to enable the focused ion beam to be located in the initial position of the defect circuit region according to the chip number, the repeated structure number and the minimal structure sequence number.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, the present invention relates to a kind of method of repetitive structure defect of accurate positioning analysis electron beam defects detection discovery.
Background technology
Advanced integrated circuit fabrication process generally all comprises the operation of hundreds of step, the small mistake of any link all will cause the inefficacy of whole chip, constantly dwindling along with circuit critical size particularly, it is just stricter to the requirement of technology controlling and process, so in process of production for finding timely and the defect detection equipment that all disposes optics and electron beam of dealing with problems carries out online detection to product.
The basic principle of electron beam defects detection is that the electron beam of detection is projected on chip, carrys out the Electric Field Characteristics on control chip surface by controlling the energy of incident electron, and it is positive electric field that wafer forms rear surface at tungsten contact hole.Because the electric property of the device below contact hole is different, so the electric microfield with respect to whole wafer on different contact holes is different, as Fig. 1 is expressed as contact hole on the different components of duplicate devices structure, under same electric field, show as different bright dark.
When certain device occurs when abnormal, so coupled contact hole will from the contact hole of proper device around show as different bright dark as shown in the dotted line frame of Fig. 2, thereby by electron beam defects detection, found.In order in wafer manufacturing process, device effectively to be monitored, in actual production process, often the circuit region of the single repetitive structure memory of electric property as shown in Figure 3 on chip is carried out to online electron beam detection.But for the location of defective locations, what adopt at present is to determine that its particular location on wafer shows as coordinate in plane as (x, y).And for the defect of the type, form the analysis of reason, the analysis that generally need to carry out section by means of focused ion beam just can be carried out a step and analyze its real failure mode, has plenty of as shown in Figure 4 because etching is insufficient, have plenty of particle and forms the bright dark difference of contact hole.Because electron beam detects and the center of focused ion beam analytical equipment defines and has certain error, so go to locate repetitive structure defect as shown in Figure 3 in focused ion beam analytical equipment, be a very difficult job.
Summary of the invention
Technical problem to be solved by this invention is for there being above-mentioned defect in prior art, and a kind of method of repetitive structure defect of accurately positioning analysis electron beam defects detection discovery is provided.
In order to realize above-mentioned technical purpose, according to the present invention, provide a kind of method of repetitive structure defect of accurate positioning analysis electron beam defects detection discovery, comprising:
First step, for utilizing electron beam defect detection equipment to search the repetitive structure device on the chip with chip number on wafer, and utilizes electron beam defect detection equipment to set repetitive structure numbering to the repetitive structure device finding out;
Second step, for determining the minimum repetitive structure that forms single repetitive structure device, and sets minimal structure sequence number to all repetitive structure devices;
Third step, for utilizing electron beam defect detection equipment to go out to exist abnormal minimum repetitive structure by comparable chip data search;
The 4th step, for passing to focused ion beam analytical equipment by finding out the abnormal corresponding chip of minimum repetitive structure number, repetitive structure numbering and minimal structure sequence number;
The 5th step, for coming mobile wafer that focused ion beam is positioned to defective circuits region original position by focused ion beam analytical equipment according to chip number, repetitive structure numbering and minimal structure sequence number.
For example, described repetitive structure device is memory circuitry.
Utilize method of the present invention, can in focused ion beam analytical equipment, directly find the repetitive structure defect of being determined by electron beam defect detection equipment that need to carry out fractograph analysis.
Accompanying drawing explanation
By reference to the accompanying drawings, and by reference to detailed description below, will more easily to the present invention, there is more complete understanding and more easily understand its advantage of following and feature, wherein:
Fig. 1 schematically shows duplicate devices structure contact hole schematic diagram under same electric field.
Fig. 2 schematically shows device definite defect schematic diagram of electron detection device when abnormal.
Fig. 3 schematically shows the surveyed area schematic diagram of repetitive structure device on chip.
Fig. 4 schematically shows the bright dark difference schematic diagram in device contacts hole forming according to the different reasons of prior art.
Fig. 5 schematically shows the flow chart of the method for the repetitive structure defect that accurately positioning analysis electron beam defects detection is found according to the preferred embodiment of the invention.
Fig. 6 schematically shows repetitive structure units test zone number schematic diagram on chip.
Fig. 7 schematically shows the schematic diagram of setting minimum repetitive structure device.
Fig. 8 schematically shows defective schematic diagram on the surveyed area of chip on wafer.
Fig. 9 schematically shows testing circuit region original position schematic diagram.
It should be noted that, accompanying drawing is used for illustrating the present invention, and unrestricted the present invention.Note, the accompanying drawing that represents structure may not be to draw in proportion.And in accompanying drawing, identical or similar element indicates identical or similar label.
Embodiment
In order to make content of the present invention more clear and understandable, below in conjunction with specific embodiments and the drawings, content of the present invention is described in detail.
Fig. 5 schematically shows the flow chart of the method for the repetitive structure defect that accurately positioning analysis electron beam defects detection is found according to the preferred embodiment of the invention.
Specifically, as shown in Figure 5, the method for the repetitive structure defect that accurately positioning analysis electron beam defects detection is found according to the preferred embodiment of the invention comprises:
First step S1, for utilizing electron beam defect detection equipment, search the repetitive structure device on the chip with chip number on wafer, and electron beam defect detection equipment is checked the repetitive structure device finding out and is set repetitive structure numbering, for example as shown in Figure 6, by a plurality of repetitive structure devices respectively label be 1,2,3,4,5 and 6.
Second step S2, be used for the minimum repetitive structure of the single repetitive structure device of definite composition (, each repetitive structure device is comprised of one or more minimum repetitive structures, for example, as shown in the dotted line frame of Fig. 7), and all repetitive structure devices are set to minimal structure sequence number;
Third step S3, for utilizing electron beam defect detection equipment to go out to exist abnormal minimum repetitive structure by comparable chip data search, as shown in the reference number 7 in Fig. 8;
The 4th step S4, electron beam defect detection equipment is looked into and is passed to focused ion beam analytical equipment by finding out the abnormal corresponding chip of minimum repetitive structure number, repetitive structure numbering and minimal structure sequence number; Wherein, particularly, for example, focused ion beam analytical equipment can import the data relevant to minimum repetitive structure from electron beam defect detection equipment in advance, thereby carries out file-sharing.
The 5th step S5, for coming mobile wafer that focused ion beam is positioned to defective circuits region original position by focused ion beam analytical equipment according to chip number, repetitive structure numbering and minimal structure sequence number.
In specific embodiment, for example, when at electron beam defect detection equipment, surveyed area (repetitive structure device being carried out in chip detection region as shown in Figure 3, for example, during setting memory circuitry), it is carried out to label (as shown in Figure 6), and then the minimum repetitive structure (as shown in Figure 7) of definite memory circuitry, all circuit are all comprised of this minimum repetitive structure.So, the memory circuitry of every detection all can have corresponding original position, when device that electron beam defect detection equipment relatively notes abnormalities by data, the position of its defect can be expressed as the chip number of detection, surveyed area label (repetitive structure numbering) and the minimal structure sequence number in chip.If this defect need to position while analyzing in focused ion beam analytical equipment so, first the defective locations in the present invention is transferred in focused ion beam analytical equipment, then be first easy to just can find concrete defective circuit region in defective chip as shown in Figure 8, mobile wafer is positioned at focused ion beam in defective circuits region original position as shown in Figure 9, at the same minimum repetitive structure of setting reservoir circuit the same as electron beam defect detection equipment, finally input the sequence number of the repetitive structure that electron beam defect detection equipment obtains, so just can directly find very accurately the defect in repeat circuit structure to carry out the analysis of section.
By this invention technology, for example on electron beam defect detection equipment discovery wafer, on the 3rd detection zone (repetitive structure is numbered 3) on the 6th chip (chip number is 6), there is an abnormal defect, it is numbered 1115 on repetitive structure, so the recognizing site of its defect is (6,3,1115).When needs carry out focused ion beam while carrying out fractograph analysis, by wafer transfer in section analysis equipment of focused ion beam, ion beam is moved on the 3rd detection zone of the 6th chip, then in the original position that navigates to the 3rd detection zone as shown in Figure 9, then setting the minimum constitutional repeating unit the same with electron beam defect detection equipment, that finally inputs defect repeats to number 1115, just the defective locations that need to position analysis can be directly found, so just the positioning analysis of exact position can be carried out to the abnormity point on repetitive structure device.
In addition, it should be noted that, unless stated otherwise or point out, otherwise the descriptions such as the term in specification " first ", " second ", " the 3rd " are only for distinguishing each assembly, element, step of specification etc., rather than for representing logical relation between each assembly, element, step or ordinal relation etc.
Be understandable that, although the present invention with preferred embodiment disclosure as above, yet above-described embodiment is not in order to limit the present invention.For any those of ordinary skill in the art, do not departing from technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement to make many possible changes and modification to technical solution of the present invention, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not depart from technical solution of the present invention,, all still belongs in the scope of technical solution of the present invention protection any simple modification made for any of the above embodiments, equivalent variations and modification according to technical spirit of the present invention.
Claims (2)
1. a method for the repetitive structure defect that accurate positioning analysis electron beam defects detection is found, is characterized in that comprising:
First step, for utilizing electron beam defect detection equipment to search the repetitive structure device on the chip with chip number on wafer, and utilizes electron beam defect detection equipment to set repetitive structure numbering to the repetitive structure device finding out;
Second step, for determining the minimum repetitive structure that forms single repetitive structure device, and sets minimal structure sequence number to all repetitive structure devices;
Third step, for utilizing electron beam defect detection equipment to go out to exist abnormal minimum repetitive structure by comparable chip data search;
The 4th step, for passing to focused ion beam analytical equipment by finding out the abnormal corresponding chip of minimum repetitive structure number, repetitive structure numbering and minimal structure sequence number;
The 5th step, for coming mobile wafer that focused ion beam is positioned to defective circuits region original position by focused ion beam analytical equipment according to chip number, repetitive structure numbering and minimal structure sequence number.
2. the method for the repetitive structure defect that accurate positioning analysis electron beam defects detection according to claim 1 is found, is characterized in that, described repetitive structure device is memory circuitry.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410390740.0A CN104157586B (en) | 2014-08-08 | 2014-08-08 | The method being accurately positioned the repetitive structure defect that analysis electron beam defects detection finds |
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| CN201410390740.0A CN104157586B (en) | 2014-08-08 | 2014-08-08 | The method being accurately positioned the repetitive structure defect that analysis electron beam defects detection finds |
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| CN104157586A true CN104157586A (en) | 2014-11-19 |
| CN104157586B CN104157586B (en) | 2017-03-08 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231617A (en) * | 2016-12-21 | 2018-06-29 | Fei公司 | Defect analysis |
| CN109659248A (en) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | Method of the defect to graph layer setting accuracy on raising mating plate |
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| US20050213086A1 (en) * | 2004-03-29 | 2005-09-29 | Akira Hamamatsu | Method of apparatus for detecting particles on a specimen |
| CN102789999A (en) * | 2012-08-16 | 2012-11-21 | 上海华力微电子有限公司 | Defect detecting method for utilizing graphic features to scan and manufacturing method of semiconductor chip |
| CN103065991A (en) * | 2012-11-12 | 2013-04-24 | 上海华力微电子有限公司 | Semiconductor device repeated defect detection method |
| CN103344660A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Electron microscope analysis method for defect detection according to circuit pattern |
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2014
- 2014-08-08 CN CN201410390740.0A patent/CN104157586B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040126003A1 (en) * | 2002-12-27 | 2004-07-01 | Ikunao Isomura | Pattern inspection apparatus |
| US20050213086A1 (en) * | 2004-03-29 | 2005-09-29 | Akira Hamamatsu | Method of apparatus for detecting particles on a specimen |
| CN102789999A (en) * | 2012-08-16 | 2012-11-21 | 上海华力微电子有限公司 | Defect detecting method for utilizing graphic features to scan and manufacturing method of semiconductor chip |
| CN103065991A (en) * | 2012-11-12 | 2013-04-24 | 上海华力微电子有限公司 | Semiconductor device repeated defect detection method |
| CN103344660A (en) * | 2013-06-27 | 2013-10-09 | 上海华力微电子有限公司 | Electron microscope analysis method for defect detection according to circuit pattern |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108231617A (en) * | 2016-12-21 | 2018-06-29 | Fei公司 | Defect analysis |
| CN108231617B (en) * | 2016-12-21 | 2023-03-28 | Fei公司 | Defect analysis |
| CN109659248A (en) * | 2018-12-19 | 2019-04-19 | 上海华力集成电路制造有限公司 | Method of the defect to graph layer setting accuracy on raising mating plate |
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| CN104157586B (en) | 2017-03-08 |
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