CN104155541B - Electromagnetic and thermal stress complex environmental sensitivity testing system and method for microprocessor - Google Patents
Electromagnetic and thermal stress complex environmental sensitivity testing system and method for microprocessor Download PDFInfo
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Abstract
The invention relates to an electromagnetic and thermal stress complex environmental sensitivity testing method for a microprocessor. An RF interference signal source (1), a power amplifier (2), a coupling capacitor (3), a power supply distribution network (4), a tested microprocessor (5), a PCB (6), a thermostatic heating tank (7), a DC power supply (8) and an oscilloscope (9) are included. The method also provides a capacity coupling injection interference based method for testing the electromagnetic and thermal stress complex environmental sensitivity of a microprocessor. The system is easy to build, low in cost and quick and convenient in testing, and solves the problem that the testing of the electromagnetic and thermal stress complex sensitivity of the microprocessor is difficult; meanwhile, the testing method is simple, the operating process is definite, the electromagnetic sensitivity of the microprocessor at different work environment temperatures can be accurately tested within the whole frequency band ranging from 150 KHz to 1 GHz, and sample testing can be carried out at an appointed operating temperature or a certain frequency point.
Description
Technical field
The present invention relates to microprocessor electromagnetism robustness testing field is and in particular to a kind of microprocessor electromagnetism and thermal stress
Combinational environment sensitivity testses method.
Background technology
Microprocessor as the core of electronic information, in Aero-Space, space technology, transportation and national defence troops
The key areas such as thing are extensively applied.Under complicated electromagnetism and severe temperature environment, the intrinsic index meeting of microprocessor Electro Magnetic Compatibility
Drift deteriorates, and leads to chip and the electromagnetism robustness problems of the sensitive aggravation of system electromagnetic environment and reliability decrease.Electromagnetism is healthy and strong
Property refer in the electromagnetic compatibility durability of complicated electromagnetism and climatic environment chips or system life-cycle mission profile and function peace
Full reliability.The electromagnetism vigorousness of microprocessor not only embodies its own spurious electromagnetic compatibility feature, also the extraneous ring of reflection experience
Border aging at temperature resist electromagnetic interference capability, and concern constitution equipment, the functional safety of system, comprehensive effectiveness and reliable longevity
Life.
It is simultaneous that research for ic core chip level electromagnetism vigorousness in recent years is primarily directed to processor chips level electromagnetism
Hold and component reliability carries out correlational study respectively, will be relatively fewer with the research that reliability merges for chip level electromagnetic compatible,
Status both at home and abroad shows to become focus direction at present.For IC chip electromagnetic compatibility direction, ieee electromagnetic compatibility
Report (m ramdani, e sicard, a boyer, s b dhia, j j whalen, t h.hubing, m.coenen,
o.wada.the electromagnetic compatibility of integrated circuits—past,
present,and future.ieee transactions on electromagnetic compatibility,
February 2009vol.51, no.1:78-99) review correlational study.Integrated circuit electromagnetic susceptibility method of testing and system
Meter result continues to bring out, and progressively gos deep in integrated circuit electromagnetic compatibility theoretical basiss and experimentation.Sensitive for integrated circuit
The test of property, ice62132-3 gives the testing standard of Direct Power injection method (dpi), solves the test of device sensitivity
Problem, but this electromagnetic compatible testing method does not account for variation of ambient temperature influence factor, and power decoupling network and interference
Signal isolation deficiency leads to direct-flow voltage regulation source easily to be affected by injection interference signal.For components and parts reliability degradation,
Gjb548b-2005 and mil-std-883h (department of defense test method standard,
Microcircuits, 26february 2010) standardization has been carried out to relevant test method, but the method does not account for electricity
Magnetic stress affects.Chinese patent disclosed in 3 days October in 2012 " a kind of test system of car body controller electromagnetic immunity performance and
Its method of testing " (cn102707706), gives a kind of method of testing of car body controller electromagnetism interference free performance, solves
The electromagnetic compatibility test problem of car body controller, but the method affects anti-interference sexual factor without reference to temperature, and test needs
Want microwave dark room environment, cost intensive.Said method considers that unit environments factor is tested respectively, not by temperature and electromagnetism
Environment comprehensive gets up to measure, and cannot get the vigorousness under microprocessor electromagnetism and thermal stress combinational environment.The present invention provides
A kind of microprocessor electromagnetism and thermal stress combinational environment sensitivity testses method it is contemplated that electromagnetism and thermal stress complex effect because
Element, solves complicated electromagnetism and physical temperature environment robust test problem.
Content of the invention
In consideration of it, the present invention establishes microprocessor electromagnetism and thermal stress combinational environment sensitivity testses method, and it is based on
The method constructs corresponding test system, and this test system is easy to build, low cost, and method of testing is simple, and operating process is clear
Clear, can quickly test the conduction sensitivity characteristic of microprocessor under thermal stress and Electromagnetic heating environment, contribute to microprocessor electricity
The forecast analysis of magnetic vigorousness, provide foundation for improving microprocessor electromagnetism vigorousness in actual applications.
The technical scheme is that offer one kind is used for testing thermal stress and microprocessor sensitivity under Electromagnetic heating environment
Property system, comprising: heated at constant temperature case, rf interference signal source, power amplifier, injection coupled capacitor, one-way electric power distribution of net
Network, tested microprocessor, printed circuit board (PCB), DC source, oscillograph it is characterised in that: heated at constant temperature case produce test
Thermal stress, places tested microprocessor brassboard in it；Rf interference signal source produces the high-frequency interferencing signal of test, and it passes through
Sma adapter is connected with power amplifier；The interference signal that power amplifier is used to test carries out power amplification, and by sma
Adapter is connected with coupled capacitor；Interference signal coupling after amplifying is injected into drawing of tested microprocessor by coupled capacitor
On foot, coupled capacitor is connected with the test pin of tested microprocessor；Tested microprocessor output connects oscillograph；Oscillograph is used
In the output signal observing tested microprocessor；DC source provides running voltage for tested microprocessor, and it connects power supply and divides
Cloth network；Power distribution network is made up of inductance and low voltage difference diode, forms logical direct current, goes the one-way feed power supply exchanging to divide
Cloth network, is connected with the power pins of tested microprocessor；Coupled capacitor, power distribution network and tested microprocessor are respectively mounted
On a printed circuit.
Present invention also offers a kind of method that thermal stress is tested with microprocessor electromagnetic susceptibility under Electromagnetic heating environment,
It is characterized in that, the method to be realized using following steps:
1st step, build microprocessor electromagnetism and thermal stress combinational environment sensitivity testses system, tested microprocessor is put
In calorstat, set constant temperature the temperature inside the box in 25 DEG C to 85 DEG C operating ambient temperatures, other equipment is connected by high temperature resistant line
Test microprocessor, is placed in outside calorstat, and place is at room temperature.The output signal frequency bandwidth setting rf interference signal source exists
150khz-1ghz, coupled capacitor value 6.8nf, power distribution network comprises 4.7 μ h inductance and low voltage difference diode, unidirectional current
Source obtains stable power-supplying voltage by power distribution network；
2nd step, setting microprocessor electromagnetism and thermal stress combinational environment sensitivity physical quantity, i.e. conducted susceptibility；
3rd step, structure microprocessor Conduction Interference coupled transfer path
Build microprocessor Conduction Interference coupled transfer path by 50 ω impedances, including rf interference signal source, power amplification
The pcb terminal that device, coupled capacitor are located with tested microprocessor；Configuring high-frequency interference signal source, wideband power amplifer, design
Injection route matching impedance, power distribution network；The interference and coupling injection circuit of design, orientation injection radiofrequency signal interference is tested
Micro processor leg or position, simultaneously isolated DC signal component be applied directly to device under test pin；The Power Distribution Network of design
Network it is ensured that tested microprocessor or element circuit normal DC are powered, block high-frequency ac interference feed-in external power source or other
Non- tested circuit；
4th step, the ambient temperature of setting microprocessor work
The temperature of adjustment calorstat, at 25 DEG C to 85 DEG C, tests required ambient temperature to provide.Calorstat can show in real time
Show the temperature in case, when calorstat temperature reaches assigned temperature, Device under test is put into calorstat stably should be not less than 10 points
Clock is so that Device under test physical attribute reaches stably；
5th step, define microprocessor electromagnetic susceptibility threshold criterion
Monitor the power of injection interference signal using rf signal source, set microprocessor chip operating ambient temperature, pass through
Oscillograph observes microprocessor output pin signal waveform, monitoring state, when microprocessor work abnormal state, defines
The power of injection interference signal is as microprocessor sensitivity threshold；
6th step, setting coupling injection disturbing pulse signal
The continuous sine wave modulated using continuous sine wave and am is as disturbing pulse signal；
7th step, setting interference signal frequency test conducted susceptibility
During test on the setting original frequency point of interference signal, step up the power of interference signal, work as microprocessor
Working condition is abnormal, then judge chip failure, record the power of the front interference signal that breaks down；Otherwise continue to increase work(
Rate, until power target value terminates；
8th step, change interference signal frequency test conducted susceptibility
Increase the frequency of interference signal, repeat the test of the 7th step, until the upper limit that frequency reaches test frequency terminates；
9th step, change calorstat temperature, after temperature stabilization, repeat the experiment of the 7th step and the 8th step, until temperature reaches
The maximum setting；
10th step, analyzing test data and result
Gather, record, export and be stored in microprocessor sensitivity testses dependency number under electromagnetism and thermal stress combinational environment
According to, shape information, carry out test result analysis, obtain tested microprocessor electromagnetism and thermal stress combinational environment sensitivity；
The invention has the beneficial effects as follows:
(1) electromagnetism and microprocessor sensitivity testses system under thermal stress combinational environment are easy to build, low cost, and test is fast
Speed is convenient, solves the problems, such as that microprocessor sensitivity testses under combinational environment stress are difficult.
(2) this method combines the impact to microprocessor of thermal stress and electromagnetic environment, can draw temperature and electromagnetic environment
Compound influence ability to microprocessor sensitivity.
(3) method of testing of the present invention is simple, and operating process is clear, can be under 20 DEG C to 85 DEG C temperature ranges, and 150khz is extremely
DCO detailed checkout electromagnetic susceptibility in the whole frequency range of 1ghz, also can be sampled in certain Frequency point of assigned temperature or certain frequency range
Test.
(4) method of testing of the present invention can obtain microprocessor sensitivity threshold data under different thermal stress, for varying environment
The forecast analysis of temperature work microprocessor electromagnetic susceptibility, provide for improving microprocessor electromagnetic susceptibility in actual applications
Foundation.
Brief description
Fig. 1 is electromagnetism of the present invention and microprocessor sensitivity testses system block diagram under thermal stress combinational environment；
Fig. 2 is electromagnetism of the present invention and microprocessor sensitivity testses method flow diagram under thermal stress combinational environment；
Fig. 3 is electromagnetism of the present invention and microprocessor sensitivity testses flow chart under thermal stress combinational environment；
Fig. 4 is electromagnetism of the present invention and microprocessor sensitivity testses result curve figure under thermal stress combinational environment.
Wherein 1-rf interference signal source；2- power amplifier；3- coupled capacitor；4- power distribution network；The tested micro- place of 5-
Reason device, 6- printed circuit board (PCB)；7- calorstat；8- DC source；9- oscillograph.
Specific embodiment
The present invention is further detailed explanation for 1-4 with reference to the accompanying drawings.
A kind of electromagnetism proposed by the present invention and microprocessor sensitivity testses method under thermal stress combinational environment, mainly not
With under thermal stress conditions, real time sensitive test is carried out to the tested pin of microprocessor, specified temp is applied by calorstat
Thermal stress, injects electromagnetic interference signal (sine, amplitude modulation, frequency modulation, fast-pulse etc.), test chip work shape by Capacitance Coupled
State and Injection Signal power, frequency and temperature relation, mainly reflect that the electromagnetism of tested microprocessor and the compound conduction of thermal stress are quick
Sense characteristic.Specific practice is that tested microprocessor is placed into calorstat, and rf interference signal is injected into by coupled transfer path
On tested micro processor leg, by oscillograph real-time monitoring output signal, judge the working condition of tested microprocessor, research
The thermal stress of tested microprocessor and electromagnetic conductive sensitivity composite attribute.
As shown in figure 1, under a kind of electromagnetism proposed by the present invention and thermal stress combinational environment microprocessor sensitivity system,
This system includes: rf interference signal source 1, power amplifier 2, coupled capacitor 3, power distribution network 4, tested microprocessor 5, print
Printed circuit board 6, calorstat 7, DC source 8, oscillograph 9；Wherein, rf interference signal source 1 produces the interference signal of test, main
Continuous sine wave to be had and am modulation continuous sine wave signal, have the function of monitoring input nonlinearities signal power size, it leads to
Cross sma adapter to be connected with power amplifier 2；Power amplifier 2 to test use interference signal carry out power amplification, with satisfaction
Test request, and be connected with coupled capacitor 3 by sma adapter；Interference signal after amplifying is coupled to by coupled capacitor 3
On the pin of tested microprocessor, the selection of its capacitance will consider to input the effect of stray inductance on path, and interference signal will
Loss-free be added in the first-class factor of chip testing pin, coupled capacitor 3 is connected with the test pin of tested microprocessor 5；Tested
Microprocessor 5 output connects oscillograph 9；The output signal of tested microprocessor 5 observed by oscillograph 9；DC source 7 is tested micro-
Processor provides running voltage, and it connects power distribution network 4；Power distribution network 4 is made up of inductance and low voltage difference diode,
Form the one-way feed power distribution network leading to direct current, going exchange, be connected with the power pins of tested microprocessor 5, effect is
The isolation impact to DC source for the AC influence signal；Coupled capacitor 3, power distribution network 4 and tested microprocessor 5 are respectively mounted
On printed circuit board (PCB) 6；Printed circuit board (PCB) 6 is placed in calorstat 7, is put with the power outside case by coaxial line and high temperature resistant line
Big device 2, DC source 8, oscillograph 9 is connected.
It is true that electromagnetism reflects its electromagnetism health indices with the microprocessor sensitivity under thermal stress combinational environment, electricity
Magnetic vigorousness is the new ideas merging Electro Magnetic Compatibility, functional safety and three problem in science of reliability.Its basic intension
Refer to the electromagnetic compatibility durability of system life-cycle mission profile and functional safety reliability in complicated electromagnetism with climatic environment.
Electromagnetism vigorousness reflects chip and the internal association of system EMC, functional safety and reliability, embodies system
Electromagnetic environmental effects, electromagnetic compatibility stability and the functional safety degree of reliability, are related to the combinational environment effect from components and parts to system
Answer mechanism, electromagnetic compatibility deterioration law and the key technical problem such as systemic-function safety and risk assessment.Internal system is electric
Structure and feature determine its spurious electromagnetic compatibility and inherent reliability, when the complicated electromagnetism of experience and physical environment stress with
After aging effect, system electromagnetism vigorousness can be caused to decline, functional safety risk is the problems such as aggravate.
Therefore, the present invention proposes a kind of electromagnetism and microprocessor sensitivity testses method under thermal stress combinational environment, if
Determine the problem that electromagnetism and thermal stress combinational environment microprocessor sensitivity characteristic are present invention research；Build electromagnetism to be combined with thermal stress
Environment is premise and the basis of analysis microprocessor electromagnetic susceptibility；Define microprocessor Capacitance Coupled under different thermal stress conditions
The port sensitivity threshhold criterion of injection interference is to judge the foundation whether chip lost efficacy；Inject different types of coupled interference letter
Number, observe the responsive state of microprocessor；Based on above-mentioned principle test system building, according to electromagnetic susceptibility testing process not
Under same thermal stress conditions, microprocessor is carried out with real time sensitive test, analysis result, solves microprocessor under thermal stress conditions
Device electromagnetic susceptibility test problem.
As shown in Fig. 2 test side of the present invention is described taking 32-bit number signal processor tms320f2812 as a example
Method, specifically includes following steps:
1st step, build electromagnetism and thermal stress combinational environment microprocessor electromagnetic susceptibility test system
Conduct electromagnetic susceptibility test system according to building microprocessor shown in Fig. 1.This system mainly includes rf interference letter
Number source 1, power amplifier 2, coupled capacitor 3, power distribution network 4, tested microprocessor 5, printed circuit board (PCB) 6, calorstat 7,
DC source 8 and oscillograph 9.The temperature control of calorstat at 25 DEG C -85 DEG C, the output signal frequency bandwidth of rf interference signal source
150khz-1ghz, coupled capacitor value 6.8nf, power distribution network comprises 4.7 μ h inductance and low voltage difference diode, unidirectional current
Source adopts adjustable D. C regulated.
2nd step, setting microprocessor electromagnetic conductive sensitivity characteristic physical quantity, i.e. conducted susceptibility；
Under electromagnetism and thermal stress combinational environment, microprocessor sensitivity refers to microprocessor at different ambient temperatures
Electromagnetic susceptibility characteristic；The presence of rf interference signal leads to microprocessor chip logical miss, produces mistake at different ambient temperatures
Signal by mistake and instruction or when leading to microprocessor misoperation, show to enter sensitizing range, set microprocessor chip different operating
Ambient temperature, reflection microprocessor electromagnetism and thermal stress combinational environment sensitivity characteristic；Electromagnetic susceptibility include conducted susceptibility and
Radiosensitivity, the sensitivity herein mentioned is not added with specified otherwise and refers both to conducted susceptibility；
Due to the presence of rf interference signal, the supply voltage of microprocessor produces fluctuation, when mains fluctuations are more than volume
Determine the 20% of voltage, or the difference of supply voltage vdd and vss reduce by more than vdd 30% when, microprocessor enters sensitive
Area.
3rd step, structure microprocessor Conduction Interference coupled transfer path
Build microprocessor Conduction Interference coupled transfer path by 50 ω impedances, including rf interference signal source, power amplification
The pcb terminal that device, coupled capacitor are located with tested microprocessor.For reducing the impact of signaling reflex, test system adopts 50 ω
Each ingredient of cable connection, including the pcb cabling mating with 50 ω it is ensured that from rf interference signal source 1 to tested micro- from
Interference signal transmission path input impedance between reason device 5 is 50 ω.
4th step, the ambient temperature of setting microprocessor work
The temperature of adjustment calorstat, at 25 DEG C to 85 DEG C, tests required ambient temperature to provide.Calorstat can show in real time
Show the temperature in case, when calorstat temperature reaches assigned temperature, Device under test is put into calorstat stably should be not less than 10 points
Clock is so that Device under test physical attribute reaches stably.
5th step, the microprocessor electromagnetic susceptibility threshold criterion defining under specified temp utilize the monitoring injection of rf signal source
The power of interference signal, observes microprocessor output pin signal waveform, monitoring state by oscillograph, works as microprocessor
When working condition is abnormal, defining the interfering signal power now injecting is microprocessor sensitivity threshold, is injected into microprocessor and draws
Signal on foot is the superposition of rf interference signal and+3.3v DC power signal.
Not plus interference when, output signal can be obtained on oscillograph and set its marginal range, this marginal range is in this reality
Apply and in example, be set as the 20% of output voltage level, on each Frequency point of input nonlinearities signal, continue to increase interference signal
Power, until the voltage levvl of output signal exceedes marginal range then it is assumed that microprocessor lost efficacy, record now input nonlinearities letter
Number power, under different input nonlinearities signal frequencies, sensitizing range critical power value is different, and representative value is 36dbm.
6th step, the continuous sine wave modulated using continuous sine wave (cw) and am are as disturbing pulse signal source setting coupling
Close injection disturbing pulse signal.
In this embodiment, modulated signal is 1khz sine wave, and modulation factor is fixed as 80%, microprocessor is surveyed
During examination, cw and am signal uses same constant peak value, the signal peak p of amamSignal peak p with cwcwBetween relation
As shown in formula (1):
Wherein m is modulation factor, when m=0.8 (namely 80%), shown in cw and am signal peak relation such as formula (2):
pam=0.407pcw(2)
When being used the am signal that modulation factor is 80% as interference signal, for cw interference signal, signal
The signal level in source have dropped 5.1db.
Interference signal in this embodiment adopts continuous sine wave signal, and frequency is 150khz-1ghz, arranges power mesh
Scale value is 5w (36dbm), prevents the damage that the too high circuit to chip internal of power causes physically.In test process, interference
Signal function is at least long than microprocessor Best-case Response Time in the time of microprocessor, and under any circumstance, during effect
Between be no less than 1 second.
7th step, setting interference signal frequency test conducted susceptibility
Testing process is as shown in Figure 3.During test, the original frequency of interference signal, from the beginning of 150khz or a certain setting value, is
Save the testing time, the initial power of interference signal is set as plimit- xdbm, wherein x are the allowances of power, plimitFor power
Desired value, on each Frequency point, steps up the power of interference signal, until power target value reaches 5w (36dbm) knot
Bundle, if microprocessor work abnormal state, judges chip failure, records the power of the front interference signal that breaks down；No
Then continue to increase power, until power target value terminates.
8th step, change interference signal frequency test conducted susceptibility
Increase or change the frequency of interference signal, repeat the test of the 7th step, until frequency reaches the upper limit of test frequency
(1ghz) or target setting value terminates, when carrying out next frequency test, initial power can be set to 6dbm less than previous frequency,
To reduce the loop iteration of power.
9th step, the temperature test conducted susceptibility of change calorstat
Increased or decrease the design temperature of calorstat, repeat the test of the 7th step and the 8th step, until temperature reaches setting
Temperature upper limit or reach at a temperature of setting limit.
10th step, analyzing test data and result
Collection, record, output and microprocessor conduction electromagnetic susceptibility test under storage thermal stress and Electromagnetic heating environment
The information such as related data, waveform, typical data is as shown in Figure 4.
According to the result of measured data, obtain injection interference signal frequency and microprocessor port under different thermal stress
The change curve of sensitivity threshold, Fig. 4 is 32-bit microprocessor tms320f2812 electromagnetic susceptibility test under different thermal stress conditions
Result curve.Can be concluded that with microprocessor sensitivity testses under Electromagnetic heating environment by thermal stress
(1) under identical thermal stress conditions, disturbance signal frequency lower threshold value is different, near 400mhz and 700mhz
Threshold value is relatively low, and sensitivity is higher, and reflection microprocessor is easily disturbed by outer signals in this frequency range；
(2) under identical frequency, microprocessor sensitivity threshold values slightly improves with the rising of temperature, illustrates that temperature is higher
The capacity of resisting disturbance of microprocessor is weaker, needs to be optimized measure to the microprocessor under hot operation.
(3) impact to microprocessor sensitivity threshold values for the frequency is higher than significantly temperature, illustrates to rise in combinational environment leading
Influence factor be electromagnetic environment intensity.
(4) in the nominal operating temperature range of chip, microprocessor port sensitivity threshold most of in more than 20dbm,
Meet common engineering application (20dbm) to require；In the application scenario (30dbm) higher to sensitive requirements, need to microprocessor
The relatively low frequency range of device sensitivity threshold implements Optimized Measures.
Although being described in detail to the present invention already in connection with embodiment, skilled artisan would appreciate that
Ground is that the present invention is not limited only to specific embodiment, on the contrary, in the various corrections without departing from the application spirit and essence, becomes
Shape and replacement all fall among the protection domain of the application.
Claims (2)
1. a kind of system for testing microprocessor electromagnetism and thermal stress combinational environment sensitivity, comprising: rf interference signal source
(1), power amplifier (2), coupled capacitor (3), power distribution network (4), tested microprocessor (5), printed circuit board (PCB) (6),
Heated at constant temperature case (7), DC source (8), oscillograph (9) it is characterised in that:
Rf interference signal source (1) produces the interference signal of test, and it is connected with power amplifier (2) by sma adapter；Work(
Rate amplifier (2) to test with interference signal carry out power amplification, and be connected with coupled capacitor (3) by sma adapter；Coupling
Close electric capacity (3) and adopt high power capacity, and the interference signal after amplifying is coupled on the pin of tested microprocessor, coupling
Close electric capacity (3) to be connected with the test pin of tested microprocessor (5)；Tested microprocessor (5) output connects oscillograph (9)；Show
Ripple device (9) is used for observing the output signal of tested microprocessor (5)；DC source (8) is tested microprocessor offer work electricity
Pressure, it connects power distribution network (4)；Power distribution network (4) is used for providing galvanic current source, and isolation power is put simultaneously
The interference signal that big device (2) exports is coupled to DC source (8), and power distribution network (4) includes inductance and diode, and power supply divides
Cloth network (4) is connected with the power pins of tested microprocessor (5)；Printed circuit board (PCB) (6) is used for installing coupled capacitor (3), electricity
Source distribution network (4) and tested microprocessor (5), and be placed in heated at constant temperature case (7)；Heated at constant temperature case (7) is used for providing
The adjustable operating ambient temperature of tested microprocessor (5).
2. the side of microprocessor electromagnetism and thermal stress combinational environment sensitivity testses is realized using the system described in claim 1
Method is it is characterised in that the method to be realized using following steps:
1st step, build microprocessor electromagnetism and thermal stress combinational environment sensitivity testses system, the micro- place of calorstat build-in test is set
25 DEG C to 85 DEG C of device chip operation ambient temperature of reason, the output signal frequency bandwidth setting rf interference signal source is in 150khz-
1ghz, coupled capacitor value 6.8nf, power distribution network comprises 4.7 μ h inductance and low voltage difference diode, and DC source passes through electricity
Source distribution network provides supply voltage for tested microprocessor, and DC source adopts adjustable stabilized voltage supply；
2nd step, setting reflection microprocessor electromagnetism and thermal stress combinational environment sensitivity characteristic physical quantity, i.e. conducted susceptibility；
3rd step, structure microprocessor Conduction Interference coupled transfer path
Build microprocessor Conduction Interference coupled transfer path by 50 ω impedances, including rf interference signal source, power amplifier, coupling
Close the pcb terminal that electric capacity, power distribution network and tested microprocessor are located, interference signal is injected into by coupled capacitor orientation
Tested micro processor leg, power distribution network ensures tested microprocessor direct current supply, blocks high-frequency ac interference feedback simultaneously
Enter external power source；
4th step, the ambient temperature of setting microprocessor work
The temperature of adjustment calorstat, at 25 DEG C to 85 DEG C, tests required ambient temperature to provide；Calorstat can show case in real time
Interior temperature, whne calorstat temperature reach assigned temperature when, by Device under test put into calorstat should stably be not less than 10 minutes with
Device under test physical attribute is made to reach stable；
5th step, define microprocessor electromagnetism and thermal stress combinational environment sensitivity threshhold criterion
Monitor the power of injection interference signal using rf signal source, microprocessor output pin signal wave is observed by oscillograph
Shape, monitoring state, when microprocessor work abnormal state, the power defining injection interference signal is as setting microprocessor
Device operating ambient temperature electromagnetic susceptibility threshold value；
6th step, the continuous sine wave modulated using continuous sine wave and am are dry as the setting coupling injection of disturbing pulse signal source
Disturb pulse signal；
7th step, setting interference signal frequency test conducted susceptibility
During test on the interference signal original frequency point setting, step up the power of interference signal, if microprocessor work
Make abnormal state, then judge chip failure, record the power of the front interference signal that breaks down；Otherwise continue to increase power,
Terminate when reaching power target value；
8th step, change interference signal frequency test conducted susceptibility
Increase the frequency of interference signal, repeat the test of the 6th step, terminate when frequency reaches the upper limit of test frequency；
9th step, change calorstat temperature, after temperature stabilization, repeat the experiment of the 6th step and the 7th step, until temperature reaches setting
Maximum；
10th step, analyzing test data and result
Collection, record, output and storage microprocessor electromagnetism and thermal stress combinational environment sensitivity testses related data, waveform letter
Breath, carries out test result analysis, and then obtains varying environment temperature microprocessor sensitivity.
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| CN115575862B (en) * | 2022-09-29 | 2023-06-09 | 北京航空航天大学 | Electromagnetic sensitivity testing device and method for rotary transformer system of electric automobile |
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