CN104143581A - 钯硅纳米线室温红外探测器及其制作方法 - Google Patents
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- 238000000034 method Methods 0.000 claims description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 24
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- 238000011065 in-situ storage Methods 0.000 claims description 6
- NICDRCVJGXLKSF-UHFFFAOYSA-N nitric acid;trihydrochloride Chemical compound Cl.Cl.Cl.O[N+]([O-])=O NICDRCVJGXLKSF-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
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- 238000005260 corrosion Methods 0.000 claims description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
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- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 3
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- XRZCZVQJHOCRCR-UHFFFAOYSA-N [Si].[Pt] Chemical compound [Si].[Pt] XRZCZVQJHOCRCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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Abstract
一种钯硅纳米线室温红外探测器，包括抗反射膜层、P型外延硅衬底层、光敏层、SiO2光腔介质层和铝镜反射膜层；所述抗反射膜层、P型外延硅衬底层、光敏层、SiO2光腔介质层和铝镜反射膜层依次层叠在一起形成红外探测器；其改进在于：所述光敏层由钯硅纳米线阵列形成；所述红外探测器的工作模式采用背照方式；所述红外探测器工作于室温环境下。本发明的有益技术效果是：采用钯硅纳米线制作技术，在提高红外探测器性能的同时，大幅度提高Pd2Si/P-Si红外探测器的信噪比，探测器可在室温环境下工作。
Description
技术领域
本发明涉及一种红外探测器，尤其涉及一种钯硅纳米线室温红外探测器及其制作方法。
背景技术
发明人早先提出过一件主题名称为“铂硅纳米线红外探测器及其制作方法”的发明专利申请（申请号：201410081602.4），由该技术获得的红外探测器虽然性能得到了提升，但其工作时，需要用液氮来进行制冷，而液氮制冷结构复杂、体积较大，不利于装置的小型化。
发明内容
针对背景技术中的问题，本发明提出了一种钯硅纳米线室温红外探测器，包括抗反射膜层、P型外延硅衬底层、光敏层、SiO2光腔介质层和铝镜反射膜层；所述抗反射膜层、P型外延硅衬底层、光敏层、SiO2光腔介质层和铝镜反射膜层依次层叠在一起形成红外探测器；
创新在于：所述光敏层由钯硅纳米线阵列形成；所述红外探测器的工作模式采用背照方式；所述红外探测器工作于室温环境下。
前述钯硅纳米线室温红外探测器的工作原理是：红外辐射从探测器背面入射，经抗反射膜层进入P型外延硅衬底层， 光子能量小于Si禁带宽度的红外辐射穿过P型外延硅衬底层后透射进入由钯硅纳米线阵列构成的光敏层中，一部分红外辐射被钯硅纳米线阵列吸收，激发出电子-空穴对，另一部分红外辐射从光敏区透射出去并进入光学谐振腔，经铝镜反射膜层反射后，重新折回光敏层并被钯硅纳米线吸收，激发出电子-空穴对；由钯硅纳米线光敏层产生的电子-空穴对中，能量超过势垒高度的热空穴越过Pd2Si/P-Si势垒，进入P型外延硅衬底层，从而在钯硅纳米线光敏层内形成电子积累，同时P型外延硅衬底层内也形成空穴积累，光敏层内积累的电子被输出二极管收集，完成对红外辐射的探测。由于红外辐射在钯硅纳米线之间多次反射，增加了光敏层对红外辐射的吸收，此外，钯硅纳米线阵列与P型外延硅衬底层形成肖特基势垒接触，存在较大的边缘场效应，产生很大的边缘电场，导致光生电子发生雪崩倍增效应，提高了红外探测器的量子效率。Pd2Si/P-Si肖特基势垒高度为0.33eV，PtSi/P-Si肖特基势垒高度为0.21eV，故在相同制冷温度下，Pd2Si/P-Si红外探测器的暗电流比PtSi/P-Si红外探测器的暗电流小几十倍，PtSi/P-Si红外探测器需要在液氮制冷温度（80K）下工作。而本发明的Pd2Si/P-Si红外探测器可在无制冷器条件下工作于室温环境。
与现有技术相同地，所述钯硅纳米线室温红外探测器上还设置有输出二极管、P+沟阻、电极引线、P+扩散地和N保护环。
优选地，所述抗反射膜层由硅纳米线阵列形成。
一种钯硅纳米线室温红外探测器制作方法，按如下步骤制作钯硅纳米线室温红外探测器：
1）提供双面抛光的P型外延硅衬底层；
2）在P型外延硅衬底层上双面生长二氧化硅介质层，在P型外延硅衬底层正面的二氧化硅介质层上淀积氮化硅介质层；
3）采用硼扩散工艺在P型外延硅衬底层上分别形成P+沟阻和P+扩散地；
4）采用磷离子注入工艺在P型外延硅衬底层上分别形成输出二极管和N保护环；
5）采用光刻工艺在P型外延硅衬底层正面形成光敏区；采用等离子刻蚀工艺将光敏区内的氮化硅介质层刻蚀干净；采用湿法工艺腐蚀光敏区和P型外延硅衬底层背面，将光敏区和P型外延硅衬底层背面的二氧化硅介质层去掉；获得工艺片；
6）采用超高真空溅射工艺，在工艺片双面淀积铂膜并原位退火；采用铂辅助刻蚀工艺在光敏区和P型外延硅衬底层背面制作硅纳米线，然后用王水去除铂膜；P型外延硅衬底层背面的铂膜被去除后，P型外延硅衬底层背面的硅纳米线阵列即形成抗反射膜层；
7）用稀氢氟酸溶液去除光敏区内硅纳米线上的自然氧化层，采用超高真空溅射工艺在光敏区淀积钯膜并原位退火，形成钯硅纳米线阵列，钯硅纳米线阵列即为光敏层，用王水腐蚀去除光敏区外围未反应的钯膜；
8）利用PECVD工艺在光敏区及外围淀积低温二氧化硅光腔介质薄膜，形成SiO2光腔介质层；
9）采用光刻工艺，刻蚀出引线孔；
10）采用磁控溅射工艺在SiO2光腔介质层上淀积铝膜，然后采用光刻工艺形成铝镜反射膜层和电极引线压点。
本发明的有益技术效果是：采用钯硅纳米线制作技术，在提高红外探测器性能的同时，大幅度提高Pd2Si/P-Si红外探测器的信噪比，探测器可在室温环境下工作。
附图说明
图1、本发明的结构示意图；
图中各个标记所对应的名称分别为：抗反射膜层1、P型外延硅衬底层2、光敏层3、SiO2光腔介质层4、铝镜反射膜层5、输出二极管6、P+沟阻7、电极引线8、P+扩散地9、N保护环10、二氧化硅介质层11、氮化硅介质层12。
具体实施方式
一种钯硅纳米线室温红外探测器，包括抗反射膜层1、P型外延硅衬底层2、光敏层3、SiO2光腔介质层4和铝镜反射膜层5；所述抗反射膜层1、P型外延硅衬底层2、光敏层3、SiO2光腔介质层4和铝镜反射膜层5依次层叠在一起形成红外探测器；
其创新在于：所述光敏层3由钯硅纳米线阵列形成；所述红外探测器的工作模式采用背照方式；所述红外探测器工作于室温环境下。
进一步地，所述钯硅纳米线室温红外探测器上还设置有输出二极管6、P+沟阻7、电极引线8、P+扩散地9和N保护环10。
进一步地，所述抗反射膜层1由硅纳米线阵列形成。
一种钯硅纳米线室温红外探测器制作方法，按如下步骤制作钯硅纳米线室温红外探测器：
1）提供双面抛光的P型外延硅衬底层2；
2）在P型外延硅衬底层2上双面生长二氧化硅介质层11，在P型外延硅衬底层2正面的二氧化硅介质层11上淀积氮化硅介质层12；
3）采用硼扩散工艺在P型外延硅衬底层2上分别形成P+沟阻7和P+扩散地9；
4）采用磷离子注入工艺在P型外延硅衬底层2上分别形成输出二极管6和N保护环10；
5）采用光刻工艺在P型外延硅衬底层2正面形成光敏区；采用等离子刻蚀工艺将光敏区内的氮化硅介质层12刻蚀干净；采用湿法工艺腐蚀光敏区和P型外延硅衬底层2背面，将光敏区和P型外延硅衬底层2背面的二氧化硅介质层11去掉；获得工艺片；
6）采用超高真空溅射工艺，在工艺片双面淀积铂膜并原位退火；采用铂辅助刻蚀工艺在光敏区和P型外延硅衬底层2背面制作硅纳米线，然后用王水去除铂膜；P型外延硅衬底层2背面的铂膜被去除后，P型外延硅衬底层2背面的硅纳米线阵列即形成抗反射膜层1；
7）用稀氢氟酸溶液去除光敏区内硅纳米线上的自然氧化层，采用超高真空溅射工艺在光敏区淀积钯膜并原位退火，形成钯硅纳米线阵列，钯硅纳米线阵列即为光敏层3，用王水腐蚀去除光敏区外围未反应的钯膜；
8）利用PECVD工艺在光敏区及外围淀积低温二氧化硅光腔介质薄膜，形成SiO2光腔介质层4；
9）采用光刻工艺，刻蚀出引线孔；
10）采用磁控溅射工艺在SiO2光腔介质层4上淀积铝膜，然后采用光刻工艺形成铝镜反射膜层5和电极引线压点。
Claims (4)
1.一种钯硅纳米线室温红外探测器，包括抗反射膜层（1）、P型外延硅衬底层（2）、光敏层（3）、SiO2光腔介质层（4）和铝镜反射膜层（5）；所述抗反射膜层（1）、P型外延硅衬底层（2）、光敏层（3）、SiO2光腔介质层（4）和铝镜反射膜层（5）依次层叠在一起形成红外探测器；
其特征在于：所述光敏层（3）由钯硅纳米线阵列形成；所述红外探测器的工作模式采用背照方式；所述红外探测器工作于室温环境下。
2.根据权利要求1所述的钯硅纳米线室温红外探测器，其特征在于：所述钯硅纳米线室温红外探测器上还设置有输出二极管（6）、P+沟阻（7）、电极引线（8）、P+扩散地（9）和N保护环（10）。
3.根据权利要求1所述的钯硅纳米线室温红外探测器，其特征在于：所述抗反射膜层（1）由硅纳米线阵列形成。
4.一种钯硅纳米线室温红外探测器制作方法，其特征在于：按如下步骤制作钯硅纳米线室温红外探测器：
1）提供双面抛光的P型外延硅衬底层（2）；
2）在P型外延硅衬底层（2）上双面生长二氧化硅介质层（11），在P型外延硅衬底层（2）正面的二氧化硅介质层（11）上淀积氮化硅介质层（12）；
3）采用硼扩散工艺在P型外延硅衬底层（2）上分别形成P+沟阻（7）和P+扩散地（9）；
4）采用磷离子注入工艺在P型外延硅衬底层（2）上分别形成输出二极管（6）和N保护环（10）；
5）采用光刻工艺在P型外延硅衬底层（2）正面形成光敏区；采用等离子刻蚀工艺将光敏区内的氮化硅介质层（12）刻蚀干净；采用湿法工艺腐蚀光敏区和P型外延硅衬底层（2）背面，将光敏区和P型外延硅衬底层（2）背面的二氧化硅介质层（11）去掉；获得工艺片；
6）采用超高真空溅射工艺，在工艺片双面淀积铂膜并原位退火；采用铂辅助刻蚀工艺在光敏区和P型外延硅衬底层（2）背面制作硅纳米线，然后用王水去除铂膜；P型外延硅衬底层（2）背面的铂膜被去除后，P型外延硅衬底层（2）背面的硅纳米线阵列即形成抗反射膜层（1）；
7）用稀氢氟酸溶液去除光敏区内硅纳米线上的自然氧化层，采用超高真空溅射工艺在光敏区淀积钯膜并原位退火，形成钯硅纳米线阵列，钯硅纳米线阵列即为光敏层（3），用王水腐蚀去除光敏区外围未反应的钯膜；
8）利用PECVD工艺在光敏区及外围淀积低温二氧化硅光腔介质薄膜，形成SiO2光腔介质层（4）；
9）采用光刻工艺，刻蚀出引线孔；
10）采用磁控溅射工艺在SiO2光腔介质层（4）上淀积铝膜，然后采用光刻工艺形成铝镜反射膜层（5）和电极引线压点。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841823A (zh) * | 2016-04-14 | 2016-08-10 | 董友强 | 一种锰硅纳米线红外探测器及其制作方法 |
| CN110164992A (zh) * | 2019-05-30 | 2019-08-23 | 中国电子科技集团公司第四十四研究所 | 一种改进凹透镜模块的apd光电器件及其制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3968272A (en) * | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
| US4875082A (en) * | 1986-06-20 | 1989-10-17 | Ford Aerospace Corporation | Schottky barrier photodiode structure |
| CN103794673A (zh) * | 2014-03-07 | 2014-05-14 | 中国电子科技集团公司第四十四研究所 | 铂硅纳米线红外探测器及其制作方法 |
| CN103915517A (zh) * | 2012-12-28 | 2014-07-09 | 首尔伟傲世有限公司 | 光检测元件 |
-
2014
- 2014-08-12 CN CN201410393284.5A patent/CN104143581A/zh active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3968272A (en) * | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
| US4875082A (en) * | 1986-06-20 | 1989-10-17 | Ford Aerospace Corporation | Schottky barrier photodiode structure |
| CN103915517A (zh) * | 2012-12-28 | 2014-07-09 | 首尔伟傲世有限公司 | 光检测元件 |
| CN103794673A (zh) * | 2014-03-07 | 2014-05-14 | 中国电子科技集团公司第四十四研究所 | 铂硅纳米线红外探测器及其制作方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105841823A (zh) * | 2016-04-14 | 2016-08-10 | 董友强 | 一种锰硅纳米线红外探测器及其制作方法 |
| CN110164992A (zh) * | 2019-05-30 | 2019-08-23 | 中国电子科技集团公司第四十四研究所 | 一种改进凹透镜模块的apd光电器件及其制作方法 |
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