CN104143576A - 一种CVD石墨烯-SiC薄膜的太阳能光伏硅片 - Google Patents
一种CVD石墨烯-SiC薄膜的太阳能光伏硅片 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 40
- 239000010703 silicon Substances 0.000 title claims abstract description 40
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 33
- 125000000524 functional group Chemical group 0.000 claims abstract description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 4
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- 238000002834 transmittance Methods 0.000 abstract description 2
- 238000000407 epitaxy Methods 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 2
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- HUTDUHSNJYTCAR-UHFFFAOYSA-N ancymidol Chemical compound C1=CC(OC)=CC=C1C(O)(C=1C=NC=NC=1)C1CC1 HUTDUHSNJYTCAR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
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- PYTMYKVIJXPNBD-UHFFFAOYSA-N clomiphene citrate Chemical compound [H+].[H+].[H+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.C1=CC(OCCN(CC)CC)=CC=C1C(C=1C=CC=CC=1)=C(Cl)C1=CC=CC=C1 PYTMYKVIJXPNBD-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
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- 239000003365 glass fiber Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 230000008569 process Effects 0.000 description 1
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Abstract
本发明公开了一种CVD石墨烯-SiC薄膜的太阳能光伏硅片，其特征在于由硅片和覆盖在其表面的石墨烯薄膜构成。所述的硅片为单晶硅、多晶硅或带状硅中的一种。所述的石墨烯薄膜上有SiC、CSiC或Si的一种或多种官能团，石墨烯薄膜厚度为10-1000nm，石墨烯薄膜与硅片外延粘接。该材料中由于SiC、CSiC或Si的一种或多种官能团的加入能够使石墨烯薄膜与基体紧密结合，且该石墨烯-SiC薄膜具有90％以上的透光率，并且对红外光有强烈的吸收，能够显著提高光电转化效率。
Description
技术领域
本发明涉及一种太阳能光伏硅片，特别是涉及一种CVD石墨烯-SiC薄膜的太阳能光伏硅片。
背景技术
传统的化石能源给人类带来巨大利益的同时也带来了环境污染、温室效应等一系列严重后果，近年来形势更加恶化。而太阳能光伏发电有无可比拟的优点：充分的清洁性、绝对的安全性、相对的广泛性、确实的长寿命和免维护性、资源的充足性及潜在的经济性等。但是由于光伏太阳能电池的光电转化率低，使得硅太阳能电池的电力价格是比较高的，短时间内不可能把太阳能供电普及。在硅太阳能电池的研究中，成本和电池转换效率是需要同时考虑的两个因素。所以进一步提高光电转换效率，也就成为该领域急需攻克的热点和难点。石墨烯(Graphene，GNS)是一种碳二维纳米材料，具有独特的物理化学特性，它几乎是完全透明的，只吸收2.3％的可见光，却对红外线有着强烈的吸收，可有效提高光伏电池的光电转化效率，同时其导电、导热性能超强。将石墨烯自组装到硅片表面，可以提高太阳能电池片的光电性能。
然而石墨烯是一种由单层碳原子组成的平面二维结构，与石墨类，碳原子4个价电子中的3个以sp2杂化的形式与最近邻三个碳原子形成平面正六边形连接的蜂巢结构，另一个垂直于碳原子平面的σz轨道电子在晶格平面两侧如苯环一样形成高度巡游的大π键。这就使得石墨烯层与玻璃纤维之间无法形成紧密的键合，易使得石墨烯与基材脱落，限制了石墨烯的潜在使用。因此，而通过CVD的方法制备含有碳化硅官能团的石墨烯薄膜，由于石墨烯官能团可键与硅基体形成强健，可将石墨烯与基体牢牢结合。
文献“申请号为200910219530.4的中国专利”公开了一种基于石墨烯/硅肖特基结的光伏电池及其制备方法，该方法采用直接转移、甩膜、喷涂、浸沾、过滤、干燥的方法制备石墨烯薄膜使其与基底电极上的n-Si紧密结合；该光伏电池具有降低硅的使用率，组装工艺简单、成本低的特点。但是该现有技术仅将石墨烯进行简单共混。因此共混制备成复合材料后存在界面粘结性能差等缺点。
发明内容
本发明的目的旨在克服上述现有技术存在的缺陷，提供一种能改善石墨烯和硅片基体的界面结合力的石墨烯-SiC薄膜的太阳能光伏硅片。
为实现本发明的目的所采用的技术方案是：一种CVD石墨烯-SiC薄膜的太阳能光伏硅片，其特征在于由硅片和覆盖在其表面的石墨烯薄膜构成。所述的硅片为单晶硅、多晶硅或带状硅中的一种。所述的石墨烯薄膜成分包括石墨烯、SiC、CSiC或Si的一种或多种官能团，石墨烯薄膜厚度为10-1000nm，石墨烯薄膜与硅片外延粘接。
本发明的有益效果：1.SiC、CSiC或Si的一种或多种官能团的加入能够使石墨烯薄膜与基体紧密结合，同时并不影响石墨烯的性能；2.石墨烯-SiC薄膜具有90％以上的透光率，并且对红外光有强烈的吸收，能够显著提高光电转化效率。
附图说明
图1是本发明的结构示意图：
10 为硅基体；20 为石墨烯-SiC薄膜；30 为官能团位点。
具体实施方式
下面结合具体实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定。
实施例1
参照图1，是一种CVD石墨烯-SiC薄膜的太阳能光伏硅片的结构示意图，其中10是硅片，20是石墨烯-SiC薄膜，30是SiC、CSiC和Si三种官能团位点。所述的硅片为单晶硅，石墨烯-SiC薄膜厚度为50nm。
实施例2
一种CVD石墨烯-SiC薄膜的太阳能光伏硅片，其特征在于由硅片和覆盖在其表面的石墨烯薄膜构成。所述的硅片为多晶硅。所述的石墨烯薄膜上有SiC官能团，石墨烯-SiC薄膜厚度为100nm，石墨烯薄膜与硅片外延粘接。
上述仅为本发明的两个具体实施方式，但本发明的设计构思并不局限于此，凡利用此构思对本发明进行非实质性的改动，均应属于侵犯本发明保护的范围的行为。但凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所作的任何形式的简单修改、等同变化与改型，仍属于本发明技术方案的保护范围。
Claims (5)
1.一种CVD石墨烯-SiC薄膜的太阳能光伏硅片，其特征在于由硅片和覆盖在其表面的石墨烯薄膜构成。
2.根据权利要求1所述的太阳能光伏硅片，其特征在于所述的硅片为单晶硅、多晶硅或带状硅中的一种。
3.根据权利要求1所述的太阳能光伏硅片，其特征在于所述的石墨烯薄膜成分包括石墨烯、SiC、CSiC或Si的一种或多种官能团。
4.根据权利要求1所述的太阳能光伏硅片，其特征在于所述的石墨烯薄膜厚度为10-1000nm。
5.根据权利要求1所述的太阳能光伏硅片，其特征在于所述的石墨烯薄膜与硅片外延粘接。
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024935A (zh) * | 2016-08-11 | 2016-10-12 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
| WO2017049682A1 (zh) * | 2015-09-25 | 2017-03-30 | 上海史墨希新材料科技有限公司 | 一种具有石墨烯涂层的太阳能电池板的制备方法 |
| CN106835067A (zh) * | 2017-01-14 | 2017-06-13 | 太原理工大学 | 一种锆合金表面石墨烯钝化处理防腐涂层的方法 |
| CN109437914A (zh) * | 2018-12-29 | 2019-03-08 | 杭州坚膜科技有限公司 | 碳化硅膜及其制备方法 |
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| CN102886270A (zh) * | 2011-07-19 | 2013-01-23 | 中国科学院物理研究所 | SiC纳米晶/石墨烯异质结及制备方法和应用 |
| CN103204493A (zh) * | 2012-01-12 | 2013-07-17 | 中国科学院微电子研究所 | 石墨烯晶片的制备方法 |
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| WO2017049682A1 (zh) * | 2015-09-25 | 2017-03-30 | 上海史墨希新材料科技有限公司 | 一种具有石墨烯涂层的太阳能电池板的制备方法 |
| CN106024935A (zh) * | 2016-08-11 | 2016-10-12 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
| CN106024935B (zh) * | 2016-08-11 | 2018-01-23 | 绍兴文理学院 | 一种掺杂型光伏薄膜材料 |
| CN106835067A (zh) * | 2017-01-14 | 2017-06-13 | 太原理工大学 | 一种锆合金表面石墨烯钝化处理防腐涂层的方法 |
| CN109437914A (zh) * | 2018-12-29 | 2019-03-08 | 杭州坚膜科技有限公司 | 碳化硅膜及其制备方法 |
| CN109437914B (zh) * | 2018-12-29 | 2021-06-22 | 浙江坚膜科技有限公司 | 碳化硅膜及其制备方法 |
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Application publication date: 20141112 |