CN104143575A - 一种薄膜晶体管、阵列基板和显示装置 - Google Patents
一种薄膜晶体管、阵列基板和显示装置 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims abstract description 96
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 22
- 239000002120 nanofilm Substances 0.000 claims description 23
- 238000009413 insulation Methods 0.000 claims description 19
- 150000004706 metal oxides Chemical class 0.000 claims description 18
- 238000002161 passivation Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 7
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910003087 TiOx Inorganic materials 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 10
- 239000001301 oxygen Substances 0.000 abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 239000002184 metal Substances 0.000 abstract description 9
- 239000002800 charge carrier Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 8
- 230000007704 transition Effects 0.000 abstract description 5
- 150000001768 cations Chemical class 0.000 abstract description 4
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910000314 transition metal oxide Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
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Abstract
本发明涉及显示技术领域,公开了一种薄膜晶体管、一种阵列基板和一种显示装置。所述薄膜晶体管包括有源层,所述有源层的材质为缺氧相金属氧化物纳米薄膜。有源层采用缺氧相金属氧化物纳米薄膜,缺氧相金属氧化物的氧空位的存在使得金属阳离子周围的电子密度增加,进而造成在离氧化物导带边缘的下方很近处形成类似于施主态的能级,使得其禁带宽度减小,载流子需要较低的能量就可以产生跃迁,另外,由于纳米薄膜具有较大的比表面积和高表面能,氧空位很容易暴露在纳米颗粒表面,因此,采用缺氧相金属氧化物纳米薄膜作为有源层,使得载流子具有高的迁移率,进而可以提高薄膜晶体管的响应速度。
Description
技术领域
本发明涉及显示技术领域,尤其涉及一种薄膜晶体管、一种阵列基板和一种显示装置。
背景技术
薄膜晶体管(Thin Film Transistor,简称TFT)是一种以沉积形成的半导体、金属和绝缘体薄膜组成的器件。包括TFT的阵列基板已经在液晶显示器(LiquidCrystal Display,简称LCD)中得到了广泛的应用。
TFT的有源层作为导电沟道,在薄膜晶体管中起着举足轻重的作用,随着手机等移动电子产品的不断发展,对TFT的有源层的要求越来越苛刻。有源层常用的材质主要分为非晶硅和多晶硅。其中非晶硅(a-Si)是非晶态,无晶界,其均匀性较好,并且成本低,但是非晶硅的载流子迁移率较低(0.5~1cm2V-1s-1);而多晶硅(p-Si)是晶体,其载流子迁移率高,但是成本也很高,并且工艺复杂。
由上述可知,现有技术中有源层为非晶硅的TFT的载流子迁移率低,响应速度慢,并且由其制备的显示装置的分辨率和亮度低;而有源层为多晶硅的TFT的成本高,工艺复杂。
发明内容
本发明的目的是提供一种薄膜晶体管、一种阵列基板和一种显示装置,用以提高载流子迁移率,进而提高响应速度。
本发明实施例首先提供一种薄膜晶体管,所述薄膜晶体管包括有源层,所述有源层的材质为缺氧相金属氧化物纳米薄膜。
在本发明技术方案中,有源层采用缺氧相金属氧化物纳米薄膜,缺氧相金属氧化物的氧空位的存在使得金属阳离子周围的电子密度增加,进而造成在离氧化物导带边缘的下方很近处形成类似于施主态的能级,使得其禁带宽度减小,载流子需要较低的能量就可以产生跃迁,另外,由于纳米薄膜具有较大的比表面积和高表面能,氧空位很容易暴露在纳米颗粒表面,因此,采用缺氧相金属氧化物纳米薄膜作为有源层,使得载流子具有高的迁移率,进而可以提高薄膜晶体管的响应速度。相对于多晶硅有源层的薄膜晶体管,本发明的薄膜晶体管成本低,工艺简单。
缺氧相金属氧化物纳米薄膜可以为过渡金属氧化物薄膜,鉴于不同的过渡金属氧化物纳米薄膜的形态是否稳定,以及制备效率的问题,优选的,所述缺氧相金属氧化物的纳米薄膜包括氧化钨纳米薄膜、氧化锌纳米薄膜、氧化钛纳米薄膜或氧化锡纳米薄膜。
特别优选的,所述氧化钨纳米薄膜为W18O49纳米薄膜。
优选的,所述有源层的厚度范围为200~300纳米。
薄膜晶体管除有源层以外,以下分为两种结构的薄膜晶体管,一种为底栅型薄膜晶体管:对上述任一种薄膜晶体管,所述薄膜晶体管还包括:
栅极;
位于所述栅极和所述有源层之间的栅绝缘层;
位于所述有源层之上的源漏电极。
另一种为顶栅型薄膜晶体管:所述薄膜晶体管还包括:
源漏电极,所述有源层位于所述源漏电极之上;
位于所述有源层之上的栅绝缘层;以及
位于所述栅绝缘层之上的栅极。
本发明实施例还提供一种阵列基板,所述阵列基板包括衬底基板以及位于所述衬底基板之上呈阵列分布的多个薄膜晶体管,其中至少一个所述薄膜晶体管为上述任一种薄膜晶体管。
由于阵列基板上的薄膜晶体管采用上述任一种薄膜晶体管,该薄膜晶体管具有较高的载流子迁移率,因此,可以降低阵列基板的工作电压和功耗。
优选的,所述的阵列基板,还包括位于所述多个薄膜晶体管之上的钝化层以及位于所述钝化层之上的像素电极。
本发明实施例还提供一种显示装置,包括上述任一种阵列基板。由于显示装置采用上述任一种阵列基板,因此,显示装置具有较低的工作电压和功耗,利于提高显示装置的分辨率和亮度。
附图说明
图1为本发明第一实施例提供的薄膜晶体管的结构示意图;
图2为本发明第二实施例提供的薄膜晶体管的结构示意图;
图3为本发明第三实施例提供的阵列基板的结构示意图。
附图标记:
1-衬底基板 2-栅极 3-栅绝缘层 4-有源层
5-源漏电极 6-钝化层 7-像素电极 8-过孔
具体实施方式
为了提高载流子迁移率,本发明实施例提供了一种薄膜晶体管、一种阵列基板和一种显示装置。该技术方案中,有源层采用缺氧相金属氧化物纳米薄膜,缺氧相金属氧化物的氧空位的存在使得金属阳离子周围的电子密度增加,进而造成在离氧化物导带边缘的下方很近处形成类似于施主态的能级,使得其禁带宽度减小,载流子需要较低的能量就可以产生跃迁,另外,由于纳米薄膜具有较大的比表面积和高表面能,氧空位很容易暴露在纳米颗粒表面,因此,采用缺氧相金属氧化物纳米薄膜作为有源层,使得载流子具有高的迁移率,进而可以提高薄膜晶体管的响应速度。为使本发明的目的、技术方案和优点更加清楚,以下举具体实施例对本发明作进一步详细说明。
本发明实施例首先提供一种薄膜晶体管,如图1所示,图1为本发明第一实施例提供的薄膜晶体管的结构示意图,所述薄膜晶体管包括有源层4,有源层4的材质为缺氧相金属氧化物纳米薄膜。
在本发明技术方案中,有源层4采用缺氧相金属氧化物纳米薄膜,缺氧相金属氧化物的氧空位的存在使得金属阳离子周围的电子密度增加,进而造成在离氧化物导带边缘处和费米面之间形成类似于施主态的能级,这使得费米能级附近的电子态密度增加,使得其禁带宽度减小,载流子需要较低的能量就可以在导带和价带间产生跃迁,另外,由于纳米薄膜具有较大的比表面积和高表面能,氧空位很容易暴露在纳米颗粒表面,因此,采用缺氧相金属氧化物纳米薄膜作为有源层4,使得载流子具有高的迁移率,进而可以提高薄膜晶体管的响应速度。相对于多晶硅有源层的薄膜晶体管,本发明的薄膜晶体管成本低,工艺简单。现有的非晶硅有源层的薄膜晶体管由于其电子迁移率较低,因此还需在有源层和源漏电极之间增加一层欧姆接触层,材质一般为掺杂的非晶硅,而本发明的技术方案中有源层采用的缺氧相金属氧化物纳米薄膜本身具有高的迁移率,不需要另外增加位于源漏电极与有源层之间欧姆接触层,因此也简化了工艺。
缺氧相金属氧化物纳米薄膜可以为过渡金属氧化物薄膜,鉴于不同的过渡金属氧化物纳米薄膜的形态是否稳定,以及制备效率的问题,优选的,所述缺氧相金属氧化物的纳米薄膜包括氧化钨纳米薄膜、氧化锌纳米薄膜、氧化钛纳米薄膜或氧化锡纳米薄膜。
特别优选的,所述氧化钨纳米薄膜为W18O49纳米薄膜。W18O49纳米薄膜具有较小的禁带宽度,利于导带和价带之间的电子跃迁,因此能进一步提高载流子迁移率。W18O49纳米薄膜的电子迁移率实验室中测得的值大约为是a-Si的几十倍到几千倍以上,由于纳米薄膜的颗粒大小、相结构、表面态的不同使得电子的迁移率不同,由于W18O49纳米薄膜的载流子迁移很高,因此薄膜晶体管的响应速度很快。
请继续参照图1所示,优选的,所述有源层的厚度范围为200~300纳米。例如,有源层的厚度为200nm、220nm、240nm、260nm、280nm或300nm。有源层的厚度小会影响纳米薄膜表面的平坦度,厚度较大会浪费纳米材料,增加工艺成本。
薄膜晶体管除有源层以外,以下分为两种结构的薄膜晶体管,一种为底栅型薄膜晶体管,即图1所示的薄膜晶体管,请继续参照图1所示:对上述任一种薄膜晶体管,薄膜晶体管还包括:
栅极2;
位于栅极2和有源层4之间的栅绝缘层3;
位于有源层4之上的源漏电极5。
另一种为顶栅型薄膜晶体管,即图2所示的薄膜晶体管,图2为本发明第二实施例提供的薄膜晶体管的结构示意图,如图2所示,薄膜晶体管还包括:
源漏电极5,有源层4位于源漏电极5之上;
位于有源层4之上的栅绝缘层3;以及
位于栅绝缘层3之上的栅极2。
本发明实施例还提供一种阵列基板,如图3所示,图3为本发明第三实施例提供的阵列基板的结构示意图,所述阵列基板包括衬底基板1以及位于衬底基板1之上呈阵列分布的多个薄膜晶体管,其中至少一个所述薄膜晶体管为上述任一种薄膜晶体管。图3所示的阵列基板上的薄膜晶体管为底栅型薄膜晶体管,栅极2位于衬底基板1之上,栅绝缘层3覆盖栅极2和衬底基板1,有源层4位于栅绝缘层3之上且遮盖栅极2,源漏电极5位于有源层4之上,源漏电极5分为源极和漏极,源极和漏极分别位于正对栅极2位置的两侧。衬底基板1材质可以为玻璃,栅绝缘层3材质可以为氮化硅(SiNx),栅绝缘层3的材质为SiNx,其在一定程度上能阻挡温度传递,保护衬底基板1。
由于阵列基板上的薄膜晶体管采用上述任一种薄膜晶体管,该薄膜晶体管具有较高的载流子迁移率,因此,可以降低阵列基板的工作电压和功耗。
请继续参照图3所示,优选的,所述的阵列基板,还包括位于多个薄膜晶体管之上的钝化层6以及位于钝化层6之上的像素电极7。图3所示,像素电极7可以通过过孔8与漏极电连接。
像素电极7材质可以为ITO(氧化铟锡)或IGZO(铟镓锌氧化物)。钝化层6材质可以为SiNx。
本发明实施例还提供一种显示装置,包括上述任一种阵列基板。由于显示装置采用上述任一种阵列基板,因此,显示装置具有较低的工作电压和功耗,利于提高显示装置的分辨率和亮度。
所述显示装置可以为:液晶面板、电子纸、液晶电视、液晶显示器、数码相框、手机、平板电脑等具有任何显示功能的产品或部件。
现有的阵列基板制备工艺为,在衬底基板上溅射形成栅电极,沉积栅绝缘层,沉积a-Si半导体有源层,对a-Si半导体有源层进行掺杂形成欧姆接触层,溅射源漏电极,沉积钝化层,制作过孔,溅射像素电极。
以下为本发明提供的一种阵列基板的制作方法的实施例,该制作方法具体包括以下步骤:
在衬底基板上溅射金属铜(Cu)形成栅极,利用气体轰击金属Cu靶材,将Cu原子溅射到衬底基板上,形成栅电极层,采用第一次掩模构图工艺,对栅电极层图形化,形成栅极;
在形成栅极的基板上形成覆盖栅极和基板的栅绝缘层,具体可以采用离子增强型化学气相沉积,栅绝缘层所用材料为SiNx,SiNx具有一定的阻挡温度传递的作用,该栅绝缘层对衬底基板有保护作用;
在栅绝缘层上形成位于栅极上方的有源层,有源层的材质具体可以采用W18O49纳米薄膜,采用溅射法制作,以钨作为靶材,通过调整溅射速率、溅射时间、氧分压等参数进行W18O49纳米薄膜的沉积,由于溅射镀膜的设备有差异,工艺参数也有差别,基本工艺参数:溅射功率70-100W,溅射速率20-30nm/min,溅射时间10-20min,工作压强3Pa,氧分压0.3Pa,得到厚度为200~300nm左右的薄膜,除采用溅射法以外,还可以采用溶胶凝胶法、溶解热法或热蒸发沉积法制备W18O49纳米薄膜;采用第二次掩模构图工艺,形成正对栅极上方的有源层;
在有源层上形成源漏金属层,采用磁控溅射的方法,利用气体轰击金属Cu靶材,将Cu原子溅射到有源层上,形成源漏电极层,采用第三次掩模构图工艺,对源漏电极层图形化,形成源漏电极;
刻蚀半导体有源层,形成沟槽;
形成像素电极层,可以根据工艺需要在制作完源漏电极以后制作该层,也可以先制作该层再制作源漏电极层,只要保证漏电极和像素电极电连接即可,像素电极层可以采用氧化铟锡制作,经过第四次掩模构图工艺形成像素电极;在该步骤之前,也可以在有源层上先沉积一层钝化层,再在钝化层上制作过孔,通过过孔可以电连接漏极和像素电极;
在本发明技术方案中,阵列基板的制作方法还可以包括在像素电极制作之后继续制作覆盖整个基板的一层钝化层,该钝化层所用材料可以为SiNx,采用第五次掩模构图工艺对该钝化层进行图形化;在该钝化层上沉积ITO或IGZO作为公共电极层,进行第六次掩模构图工艺对公共电极层图形化,形成公共电极。
可见,通过上述制作方法,制得的薄膜晶体管的有源层为氧化钨纳米薄膜,利于提高载流子迁移率,进而提高薄膜晶体管的响应速度。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。
Claims (9)
1.一种薄膜晶体管,其特征在于,所述薄膜晶体管包括有源层,所述有源层的材质为缺氧相金属氧化物纳米薄膜。
2.如权利要求1所述的薄膜晶体管,其特征在于,所述缺氧相金属氧化物的纳米薄膜包括氧化钨纳米薄膜、氧化锌纳米薄膜、氧化钛纳米薄膜或氧化锡纳米薄膜。
3.如权利要求2所述的薄膜晶体管,其特征在于,所述氧化钨纳米薄膜为W18O49纳米薄膜。
4.如权利要求1所述的薄膜晶体管,其特征在于,所述有源层的厚度范围为200~300纳米。
5.如权利要求1~4任一项所述的薄膜晶体管,其特征在于,所述薄膜晶体管还包括:
栅极;
位于所述栅极和所述有源层之间的栅绝缘层;
位于所述有源层之上的源漏电极。
6.如权利要求1~4任一项所述的薄膜晶体管,其特征在于,所述薄膜晶体管还包括:
源漏电极,所述有源层位于所述源漏电极之上;
位于所述有源层之上的栅绝缘层;以及
位于所述栅绝缘层之上的栅极。
7.一种阵列基板,其特征在于,所述阵列基板包括衬底基板以及位于所述衬底基板之上呈阵列分布的多个薄膜晶体管,其中至少一个所述薄膜晶体管为如权利要求1~6任一项所述的薄膜晶体管。
8.如权利要求7所述的阵列基板,其特征在于,还包括位于所述多个薄膜晶体管之上的钝化层以及位于所述钝化层之上的像素电极。
9.一种显示装置,其特征在于,包括如权利要求7或8所述的阵列基板。
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