CN104141722B - The phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap is adjustable - Google Patents
The phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap is adjustable Download PDFInfo
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- CN104141722B CN104141722B CN201410377170.1A CN201410377170A CN104141722B CN 104141722 B CN104141722 B CN 104141722B CN 201410377170 A CN201410377170 A CN 201410377170A CN 104141722 B CN104141722 B CN 104141722B
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Abstract
The phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap is adjustable, it relates to a kind of vibration isolator, less with the periodicity of the cycle material solving current one dimension phonon crystal vibration isolator, vibration isolating effect is poor, the band gap of limited working space system and one dimension phonon crystal vibration isolator is unadjustable, the problem that isolation frequency scope is narrower, its involving vibrations input bearing, side skin, upper covering, lower covering, secondary vibration isolation upper bracket, vibration exports bearing, one-level vibration isolation undersetting, three one-level vibration isolation phonon crystal supporting posts, three secondary vibration isolation phonon crystal supporting posts, three three grades vibration isolation phonon crystal supporting posts, three groups of one-level vibration isolation marmems compress driven unit, three groups of secondary vibration isolation marmems compress driven unit, three groups of three grades of vibration isolation marmems compress driven unit, three groups of one-level vibration isolation phonon crystal assemblies, three groups of secondary vibration isolation phonon crystal assemblies and three groups three grades vibration isolation phonon crystal assemblies.The present invention is used for vibration insulation and noise reduction.
Description
Technical field
What the present invention relates to is a kind of vibration isolator of vibration insulation and noise reduction field.
Background technique
All there is various vibration problem in mechanical industry and other industrial departments, wherein many vibrations are all nuisance vibrations, and excessive vibration and the noise caused because of vibration, pollute the environment, and infringement people's is healthy.
People achieve major progress in the research of photonic crystal, and in view of the analogy of phonon crystal and photonic crystal, in recent ten years, phonon crystal becomes new study hotspot gradually.A key character of phonon crystal is its acoustic band gap, the functional material with periodic structure and elastic wave band gaps characteristic be namely made up of two or more Elastic medium at phonon crystal or structure.When elastic wave is propagated in phonon crystal, by the effect of its intercycle structure, form special dispersion relations (also claiming band structure), the frequency range between dispersion relations curve is called band gap.In theory, the elastic wave propagation of bandgap frequency scope is suppressed.Therefore phonon crystal has broad application prospects in vibration isolation, noise reduction field.
Marmem has shape memory effect, when material is in after certain distortion occurs below martensite finish temperature under external force, heating-up temperature exceedes the phase transformation conversion temperature of material, martensite will be there is to austenitic transformation, now Material shrinkage, attempt the shape before returning to distortion, if material two ends Constrained, material internal can produce very large restoring force.The marmem with double process shape-memory effect realizes repeatedly shrinking by heating cooling.This feature is utilized to make marmen.
The method of current reduction mechanical structure noise mainly contains two classes, and one is the generation as far as possible reducing vibration and noise, and this can pass through structure optimization on the one hand, improves precision, or the method such as reduction alignment error realizes; Two is take the measures such as shielding, vibration isolation to the vibration and noise produced.This can control by increasing damping on the one hand, adds the measures such as acoustic hood to realize.But it must be noted that, we can only make vibration weaken by various means, within the scope that the impact making it cause requires at us, and can not eliminate completely.
The periodicity of the cycle material that the one dimension phonon crystal vibration isolator of current use reaches when certain whole geometry size and fixing lattice parameter is less, vibration isolating effect in band gap is poor, want to obtain good vibration isolating effect, the whole geometry size needed is larger, the environment of the limited working space system of being not suitable for exigent vibration isolating effect again, the band gap of existing one dimension phonon crystal vibration isolator is unadjustable simultaneously, makes its isolation frequency scope narrower.
Summary of the invention
The present invention is that the periodicity of cycle material for solving current one dimension phonon crystal vibration isolator is less, vibration isolating effect is poor, the band gap of limited working space system and one dimension phonon crystal vibration isolator is unadjustable, the problem that isolation frequency scope is narrower, and then the phonon crystal vibration isolator providing a kind of Shape-based interpolation memory alloy band gap adjustable.
The present invention solves the problems of the technologies described above the technological scheme taked to be: the phonon crystal vibration isolator involving vibrations input bearing that a kind of Shape-based interpolation memory alloy band gap of the present invention is adjustable, side skin, upper covering, lower covering, secondary vibration isolation upper bracket, vibration exports bearing, one-level vibration isolation undersetting, three one-level vibration isolation phonon crystal supporting posts, three secondary vibration isolation phonon crystal supporting posts, three three grades vibration isolation phonon crystal supporting posts, three groups of one-level vibration isolation marmems compress driven unit, three groups of secondary vibration isolation marmems compress driven unit, three groups of three grades of vibration isolation marmems compress driven unit, three groups of one-level vibration isolation phonon crystal assemblies, three groups of secondary vibration isolation phonon crystal assemblies and three groups three grades vibration isolation phonon crystal assemblies, first-order traverse, secondary wire, three grades of wires and Line concentrator,
Secondary vibration isolation upper bracket is positioned at the top that vibration exports bearing, the top that vibration exports bearing is furnished with one-level vibration isolation undersetting, the middle part of secondary vibration isolation upper bracket is furnished with vibration input bearing, side skin respectively coated secondary vibration isolation upper bracket and vibration exports bearing, and side skin is respectively with secondary vibration isolation upper bracket with vibrate and export bearing and removably connect, upper covering covers on secondary vibration isolation upper bracket, lower covering covers and exports on bearing in vibration, and upper covering and lower covering removably connect with side skin respectively;
Three groups of one-level vibration isolation marmem compression driven units, three groups of secondary vibration isolation marmem compression driven units are identical with the structure that three groups of three grades of vibration isolation marmems compress driven units; Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap, shape memory alloy bar and lower compression end cap, and shape memory alloy bar is removably connected by upper compression end cap and lower compression end cap and is integrated;
Three one-level vibration isolation phonon crystal supporting posts and three groups of one-level vibration isolation marmems compress that driven unit is uniform to be respectively arranged between vibration input bearing and one-level vibration isolation undersetting, one-level vibration isolation phonon crystal supporting post and shape memory alloy bar are vertically set up in parallel, the upper end of every root one-level vibration isolation phonon crystal supporting post is inserted into and vibrates on input bearing and the two Spielpassung, the lower end of every root one-level vibration isolation phonon crystal supporting post is connected with one-level vibration isolation undersetting, upper compression end cap inputs bearing with vibration and is connected, and lower compression end cap is connected with one-level vibration isolation undersetting;
Three secondary vibration isolation phonon crystal supporting posts and three groups of secondary vibration isolation marmems compress that driven unit is uniform to be respectively arranged between secondary vibration isolation upper bracket and one-level vibration isolation undersetting, secondary vibration isolation phonon crystal supporting post and shape memory alloy bar are vertically set up in parallel, the upper end of every root secondary vibration isolation phonon crystal supporting post to be inserted on secondary vibration isolation upper bracket and the two Spielpassung, the lower end of every root secondary vibration isolation phonon crystal supporting post is connected with one-level vibration isolation undersetting, upper compression end cap is connected with secondary vibration isolation upper bracket, lower compression end cap is connected with one-level vibration isolation undersetting,
Three three grades of vibration isolation phonon crystal supporting posts and three groups of three grades of vibration isolation marmems compress that driven unit is uniform is respectively arranged on secondary vibration isolation upper bracket and vibration exports between bearing, three grades of vibration isolation phonon crystal supporting posts and shape memory alloy bar are vertically set up in parallel, the upper end of every root three grades of vibration isolation phonon crystal supporting posts to be inserted on secondary vibration isolation upper bracket and the two Spielpassung, the lower end of every root three grades of vibration isolation phonon crystal supporting posts exports bearing with vibration and is connected, upper compression end cap is connected with secondary vibration isolation upper bracket, and lower compression end cap exports bearing with vibration and is connected;
Every root one-level vibration isolation phonon crystal supporting post is set with one group of one-level vibration isolation phonon crystal vibrator component, every root secondary vibration isolation phonon crystal supporting post is set with one group of secondary vibration isolation phonon crystal vibrator component, every root three grades of vibration isolation phonon crystal supporting posts are set with one group three grades vibration isolation phonon crystal vibrator component;
Three groups of one-level vibration isolation marmems compress top and bottom each self-forming one-level closed circuit ring of the shape memory alloy bar in driven unit, these two one-level closed circuit rings are electrically connected with Line concentrator by first-order traverse, three groups of secondary vibration isolation marmems compress top and bottom each self-forming secondary closed circuit ring of the shape memory alloy bar in driven unit, these two secondary closed circuit rings are electrically connected with Line concentrator by secondary wire, three groups of three grades of vibration isolation marmems compress each self-forming in top and bottom three grades of closed circuit rings of the shape memory alloy bar in driven unit, these two three grades of closed circuit rings are electrically connected with Line concentrator by three grades of wires, Line concentrator is connected with power electric.
Beneficial effect of the present invention: one, the present invention creatively compresses driven unit to three grades of vibration isolation marmems and is optimized layout, the periodicity achieving the cycle material in one dimension phonon crystal under the constraint conditio that vibration isolator physical dimension is fixed increases, and the vibration isolating effect in band gap improves 60%-80%.Two, the present invention takes full advantage of the shape memory effect of marmem, achieve the adjustment of phonon crystal band gap, power on/off situation and the power-up sequence of driven unit can be compressed by changing vibration isolation marmem at different levels, thus realize the free adjustment of isolation frequency scope, expand isolation frequency or the frequency band range of phonon crystal vibration isolator.Three, overall structure of the present invention is simple, easily manufactured, have wide range of applications, three grades of vibration isolation on phonon crystal cycle direction can be realized, vibration isolating effect is given prominence to, and there is the features such as environmental requirement is lower, the band gap of phonon crystal can regulate, be applicable to the various platform structures such as various precision type instrument support platform, vibration-isolating platform, frangible explosive material carrier frame.
Accompanying drawing explanation
Fig. 1 is perspective view of the present invention, Fig. 2 is the overall structure schematic diagram of embodiment ten, Fig. 3 is the overall structure schematic diagram after removing side skin, upper covering and lower covering, Fig. 4 is the structural representation that vibration isolation marmem of the present invention compresses driven unit, Fig. 5 is the structural representation that the present invention adopts locally resonant type phonon crystal oscillator, and Fig. 6 is the locally resonant type phonon crystal local oscillator structure schematic diagram of the specific embodiment of the present invention three.
Embodiment
Embodiment one: composition graphs 1-Fig. 3 and Fig. 4 explanation, the phonon crystal vibration isolator involving vibrations that a kind of Shape-based interpolation memory alloy band gap of present embodiment is adjustable inputs bearing 1, side skin 2, upper covering 3-1, lower covering 3-2, secondary vibration isolation upper bracket 10, vibration exports bearing 4, one-level vibration isolation undersetting 17, three one-level vibration isolation phonon crystal supporting posts 13, three secondary vibration isolation phonon crystal supporting posts 11, three three grades vibration isolation phonon crystal supporting posts 12, three groups of one-level vibration isolation marmems compress driven unit 14, three groups of secondary vibration isolation marmems compress driven unit 16, three groups of three grades of vibration isolation marmems compress driven unit 15, three groups of one-level vibration isolation phonon crystal assemblies 5, three groups of secondary vibration isolation phonon crystal assemblies 6 and three groups three grades vibration isolation phonon crystal assemblies 7,
Secondary vibration isolation upper bracket 10 is positioned at the top that vibration exports bearing 4, the top that vibration exports bearing 4 is furnished with one-level vibration isolation undersetting 17, the middle part of secondary vibration isolation upper bracket 10 is furnished with vibration input bearing 1, side skin 2 respectively coated secondary vibration isolation upper bracket 10 and vibration exports bearing 4, and side skin 2 is respectively with secondary vibration isolation upper bracket 10 with vibrate and export bearing 4 and removably connect, upper covering 3-1 covers on secondary vibration isolation upper bracket 10, lower covering 3-2 covers and exports on bearing 4 in vibration, and upper covering 3-1 and lower covering 3-2 removably connects with side skin 2 respectively;
It is identical with the structure that three groups of three grades of vibration isolation marmems compress driven units 15 that three groups of one-level vibration isolation marmem compression driven units, 14, three groups of secondary vibration isolation marmems compress driven units 16; Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap 18, shape memory alloy bar 19 and lower compression end cap 20, and shape memory alloy bar 19 is removably connected by upper compression end cap 18 and lower compression end cap 20 and is integrated;
Three one-level vibration isolation phonon crystal supporting posts 13 and three groups of one-level vibration isolation marmems compress that driven unit 14 is uniform to be respectively arranged between vibration input bearing 1 and one-level vibration isolation undersetting 17, one-level vibration isolation phonon crystal supporting post 13 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every root one-level vibration isolation phonon crystal supporting post 13 is inserted into and vibrates on input bearing 1 and the two Spielpassung, the lower end of every root one-level vibration isolation phonon crystal supporting post 13 is connected with one-level vibration isolation undersetting 17, upper compression end cap 18 inputs bearing 1 with vibration and is connected, lower compression end cap 20 is connected with one-level vibration isolation undersetting 17,
Three secondary vibration isolation phonon crystal supporting posts 11 and three groups of secondary vibration isolation marmems compress that driven unit 16 is uniform to be respectively arranged between secondary vibration isolation upper bracket 10 and one-level vibration isolation undersetting 17, secondary vibration isolation phonon crystal supporting post 11 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every root secondary vibration isolation phonon crystal supporting post 11 to be inserted on secondary vibration isolation upper bracket 10 and the two Spielpassung, the lower end of every root secondary vibration isolation phonon crystal supporting post 11 is connected with one-level vibration isolation undersetting 17, upper compression end cap 18 is connected with secondary vibration isolation upper bracket 10, lower compression end cap 20 is connected with one-level vibration isolation undersetting 17,
Three three grades vibration isolation phonon crystal supporting posts 12 and three groups of three grades of vibration isolation marmems compress that driven unit 15 is uniform is respectively arranged on secondary vibration isolation upper bracket 10 and vibration exports between bearing 4, three grades of vibration isolation phonon crystal supporting posts 12 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every root three grades of vibration isolation phonon crystal supporting posts 12 to be inserted on secondary vibration isolation upper bracket 10 and the two Spielpassung, the lower end of every root three grades of vibration isolation phonon crystal supporting posts 12 exports bearing 4 with vibration and is connected, upper compression end cap 18 is connected with secondary vibration isolation upper bracket 10, lower compression end cap 20 exports bearing 4 with vibration and is connected,
Every root one-level vibration isolation phonon crystal supporting post 13 is set with one group of one-level vibration isolation phonon crystal vibrator component 5, every root secondary vibration isolation phonon crystal supporting post 11 is set with one group of secondary vibration isolation phonon crystal vibrator component 6, every root three grades of vibration isolation phonon crystal supporting posts 12 are set with one group three grades vibration isolation phonon crystal vibrator component 7.
The Spielpassung of present embodiment, when shape memory alloy bar 19 contraction and elongation strain, ensure that vibration input bearing 1, secondary vibration isolation upper bracket 10 is along one-level vibration isolation phonon crystal supporting post 13, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12 downwards synchronous and move upward, be conducive to compressing vibration input bearing 1 and one-level vibration isolation undersetting 17, secondary vibration isolation upper bracket 10 exports bearing 4 with one-level vibration isolation undersetting 17 and secondary vibration isolation upper bracket 10 with vibration, and then realize one-level vibration isolation phonon crystal assembly 5, the rigidity of secondary vibration isolation phonon crystal assembly 6 and three grades of vibration isolation phonon crystal assemblies 7 changes, thus change the band gap of phonon crystal, realize the free adjustment of isolation frequency scope well.
Embodiment two: composition graphs 2 and Fig. 3 explanation, the often group one-level vibration isolation phonon crystal vibrator component 5 of present embodiment, often organize secondary vibration isolation phonon crystal vibrator component 6 and often organize three grades of vibration isolation phonon crystal vibrator component 7 and form by multiple ring first vibration isolation phonon crystal oscillator 22 and multiple rings second vibration isolation phonon crystal oscillator 23 consistent with ring first vibration isolation phonon crystal oscillator 22 quantity, each ring first vibration isolation phonon crystal oscillator 22 is by aluminium, plumbous or copper becomes, each ring second vibration isolation phonon crystal oscillator 23 is made up of epoxy resin or nitrile rubber, one-level vibration isolation phonon crystal vibrator component 5, secondary vibration isolation phonon crystal vibrator component 6 and three grades of vibration isolation phonon crystal vibrator component 7 form with ring second vibration isolation phonon crystal oscillator 23 mutual splicing by the ring first vibration isolation phonon crystal oscillator 22 that the cycle is alternately arranged.Setting like this, the ring first vibration isolation phonon crystal oscillator 22 that the cycle is alternately arranged forms Bragg diffraction type phonon crystal with ring second vibration isolation phonon crystal oscillator 23 mutual splicing, is conducive to vibration insulation and noise reduction.Other is identical with embodiment one.
Embodiment three: composition graphs 5 and Fig. 6 explanation, the often group one-level vibration isolation phonon crystal vibrator component 5 of present embodiment, often group secondary vibration isolation phonon crystal vibrator component 6 and often group three grades of vibration isolation phonon crystal vibrator component 7 include multiple locally resonant type phonon crystal local oscillator 21, and each locally resonant type phonon crystal local oscillator 21 is that inside and outside bilayer glueds joint the cylindrical structural be integrated; One-level vibration isolation phonon crystal supporting post 13, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12 all glued joint the multiple locally resonant type phonon crystal local oscillators 21 having the cycle equidistantly to arrange.Setting like this, the overall locally resonant type phonon crystal local oscillator of inside and outside double-layer circular structure composition is conducive to reducing bandgap frequency, and realizes small size and control large wavelength.Other is identical with embodiment one.
Embodiment four: composition graphs 6 illustrates, the endothecium structure 21-1 of each locally resonant type phonon crystal local oscillator 21 of present embodiment is nitrile rubber material, and the layer structure 21-2 of each locally resonant type phonon crystal local oscillator 21 is epoxy resin or aluminium material.Setting like this, meets actual demand.Other is identical with embodiment three.
Embodiment five: composition graphs 5 illustrates, the one-level vibration isolation phonon crystal supporting post 13 of present embodiment, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12 are made by plumbous or Steel material.Setting like this, is conducive to the connection of locally resonant type phonon crystal local oscillator 21.Other is identical with embodiment three or four.
Embodiment six: composition graphs 1 illustrates, the shape that the secondary vibration isolation upper bracket 10 described in present embodiment and vibration export bearing 4 is triangle, square, regular pentagon, regular hexagon or circle.Setting like this, simple and easy to do, meet actual demand.Other with embodiment one, two, three or four identical.
Embodiment seven: composition graphs 3 illustrates, every root one-level vibration isolation phonon crystal supporting post 13 of present embodiment, the lower end of every root secondary vibration isolation phonon crystal supporting post 11 all glued joint with one-level vibration isolation undersetting 17, the lower end of every root three grades of vibration isolation phonon crystal supporting posts 12 exports bearing 4 with vibration and glueds joint, upper compression end cap 18 input bearing 1 and secondary vibration isolation upper bracket 10 glueds joint with vibration respectively, and lower compression end cap 20 exports bearing 4 with one-level vibration isolation undersetting 17 glued joint with vibrating respectively.Setting like this, connects simple and reliable, and adaptability is good, meets actual demand.Other with embodiment one, two or three identical.
Embodiment eight: composition graphs 3 illustrates, the one-level vibration isolation undersetting 17 of present embodiment is fork-shaped bearing, this fork-shaped bearing has six support arms, the lower end of every root one-level vibration isolation phonon crystal supporting post 13 and every root secondary vibration isolation phonon crystal supporting post 11 is all gluedd joint with the corresponding support arm of one-level vibration isolation undersetting 17, the lower end of every root three grades of vibration isolation phonon crystal supporting posts 12 exports bearing 4 with vibration and glueds joint, and the support arm compressing end cap 20 under six corresponding with on one-level vibration isolation undersetting 17 glueds joint.Setting like this, one-level vibration isolation undersetting structure is simple, and glued joint simple and reliable, adaptability is good, meets actual demand.Other is identical with embodiment six.
Embodiment nine: composition graphs 1 illustrates, vibration isolator described in present embodiment also comprises multiple first screw and multiple second screw, secondary vibration isolation upper bracket 10 and vibration are exported bearing 4 and are removably connected by multiple first screw with side skin 2 respectively, and upper covering 3-1 and lower covering 3-2 is removably connected by multiple second screw with side skin 2 respectively.Setting like this, reliably easy to connect, meet actual demand.Other is identical with embodiment one or eight.
Embodiment ten: composition graphs 1 illustrates, vibration isolator described in present embodiment also comprises first-order traverse 8-1, secondary wire 8-2, three grades of wire 8-3 and Line concentrator 9, three groups of one-level vibration isolation marmems compress top and bottom each self-forming one-level closed circuit ring of the shape memory alloy bar 19 in driven unit 14, these two one-level closed circuit rings are electrically connected with Line concentrator 9 by first-order traverse 8-1, three groups of secondary vibration isolation marmems compress top and bottom each self-forming secondary closed circuit ring of the shape memory alloy bar 19 in driven unit 16, these two secondary closed circuit rings are electrically connected with Line concentrator 9 by secondary wire 8-2, three groups of three grades of vibration isolation marmems compress each self-forming in top and bottom three grades of closed circuit rings of the shape memory alloy bar 19 in driven unit 15, these two three grades of closed circuit rings are electrically connected with Line concentrator 9 by three grades of wire 8-3, Line concentrator 9 is connected with power electric.Setting like this, during actual use, compress driven unit 14 to one-level vibration isolation marmem, secondary vibration isolation marmem compression driven unit 16, three grades of vibration isolation marmems compress driven units 15 and are connected rear energising with Line concentrator 9, finally make one-level vibration isolation phonon crystal assembly 5, the rigidity of secondary vibration isolation phonon crystal assembly 6, three grades of vibration isolation phonon crystal assemblies 7 changes, thus change the band gap of phonon crystal, meet actual demand.Other is identical with embodiment one or eight.
Working procedure
Composition graphs 1-Fig. 6, vibration isolator of the present invention can realize the vibration in phonon crystal cycle direction by the input of vibration input bearing, owing to there being the band gap effect of the phonon crystal of pretightening force, this vibration excitation is decayed in certain frequency band range phonon crystal vibration band gaps, export bearing by vibration after eventually passing through the vibration attenuation of three grades of vibration isolation phonon crystal assemblies vibration is spread out of, the function of three grades of vibration isolation can be realized, owing to adding the periodicity of cycle material in one dimension phonon crystal, so the vibration isolating effect in band gap significantly improves.First carry out pretreatment to shape memory alloy bar 19, under austenitic temperature, shape memory alloy bar 19 is in contracted state, when being cooled under Martensite temperature, by applying pulling force, shape memory alloy bar 19 is extended.Driven unit 14 is compressed when giving one-level vibration isolation marmem, secondary vibration isolation marmem compresses driven unit 16, three grades of vibration isolation marmems compress driven unit 15 and are connected rear energising (as shown in Figure 2) with Line concentrator 9, shape memory alloy bar 19 can be made to shrink distortion thus compress vibration input bearing 1 and one-level vibration isolation undersetting 17, secondary vibration isolation upper bracket 10 exports bearing 4 with one-level vibration isolation undersetting 17 and secondary vibration isolation upper bracket 10 with vibration, finally make one-level vibration isolation phonon crystal assembly 5, secondary vibration isolation phonon crystal assembly 6, the rigidity of three grades of vibration isolation phonon crystal assemblies 7 changes, thus change the band gap of phonon crystal.Compressing power on/off situation and the power-up sequence of driven unit by changing vibration isolation marmem at different levels, the free adjustment of isolation frequency scope can be realized.
Claims (9)
1. the phonon crystal vibration isolator that Shape-based interpolation memory alloy band gap is adjustable, is characterized in that: its involving vibrations input bearing (1), side skin (2), upper covering (3-1), lower covering (3-2), secondary vibration isolation upper bracket (10), vibration exports bearing (4), one-level vibration isolation undersetting (17), three one-level vibration isolation phonon crystals supporting post (13), three secondary vibration isolation phonon crystals supporting post (11), three three grades vibration isolation phonon crystal supporting posts (12), three groups of one-level vibration isolation marmems compress driven unit (14), three groups of secondary vibration isolation marmems compress driven unit (16), three groups of three grades of vibration isolation marmems compress driven unit (15), three groups of one-level vibration isolation phonon crystals assembly (5), three groups of secondary vibration isolation phonon crystals assembly (6) and three groups three grades vibration isolation phonon crystal assemblies (7), first-order traverse (8-1), secondary wire (8-2), three grades of wires (8-3) and Line concentrator (9),
Secondary vibration isolation upper bracket (10) is positioned at the top that vibration exports bearing (4), the top that vibration exports bearing (4) is furnished with one-level vibration isolation undersetting (17), the middle part of secondary vibration isolation upper bracket (10) is furnished with vibration input bearing (1), side skin (2) respectively coated secondary vibration isolation upper bracket (10) and vibration exports bearing (4), and side skin (2) is respectively with secondary vibration isolation upper bracket (10) with vibrate and export bearing (4) and removably connect, upper covering (3-1) covers on secondary vibration isolation upper bracket (10), lower covering (3-2) covers and exports on bearing (4) in vibration, upper covering (3-1) and lower covering (3-2) removably connect with side skin (2) respectively,
The structure that three groups of one-level vibration isolation marmems compress driven unit (14), three groups of secondary vibration isolation marmems compress driven unit (16) and three groups of three grades of vibration isolation marmems compression driven unit (15) is identical; Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap (18), shape memory alloy bar (19) and lower compression end cap (20), and shape memory alloy bar (19) is removably connected by upper compression end cap (18) and lower compression end cap (20) and is integrated;
Three one-level vibration isolation phonon crystals supporting post (13) and three groups of one-level vibration isolation marmems compress that driven unit (14) is uniform to be respectively arranged between vibration input bearing (1) and one-level vibration isolation undersetting (17), one-level vibration isolation phonon crystal supporting post (13) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every root one-level vibration isolation phonon crystal supporting post (13) is inserted into and vibrates in input bearing (1) and the two Spielpassung, the lower end of every root one-level vibration isolation phonon crystal supporting post (13) is connected with one-level vibration isolation undersetting (17), upper compression end cap (18) inputs bearing (1) with vibration and is connected, lower compression end cap (20) is connected with one-level vibration isolation undersetting (17),
Three secondary vibration isolation phonon crystals supporting post (11) and three groups of secondary vibration isolation marmems compress that driven unit (16) is uniform to be respectively arranged between secondary vibration isolation upper bracket (10) and one-level vibration isolation undersetting (17), secondary vibration isolation phonon crystal supporting post (11) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every root secondary vibration isolation phonon crystal supporting post (11) is inserted into secondary vibration isolation upper bracket (10) and goes up and the two Spielpassung, the lower end of every root secondary vibration isolation phonon crystal supporting post (11) is connected with one-level vibration isolation undersetting (17), upper compression end cap (18) is connected with secondary vibration isolation upper bracket (10), lower compression end cap (20) is connected with one-level vibration isolation undersetting (17),
Three three grades vibration isolation phonon crystal supporting posts (12) and three groups of three grades of vibration isolation marmems compress that driven unit (15) is uniform to be respectively arranged between secondary vibration isolation upper bracket (10) and vibration output bearing (4), three grades of vibration isolation phonon crystal supporting posts (12) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every root three grades of vibration isolation phonon crystal supporting posts (12) is inserted into secondary vibration isolation upper bracket (10) and goes up and the two Spielpassung, the lower end of every root three grades of vibration isolation phonon crystal supporting posts (12) exports bearing (4) with vibration and is connected, upper compression end cap (18) is connected with secondary vibration isolation upper bracket (10), lower compression end cap (20) exports bearing (4) with vibration and is connected,
Every root one-level vibration isolation phonon crystal supporting post (13) is set with one group of one-level vibration isolation phonon crystal vibrator component (5), every root secondary vibration isolation phonon crystal supporting post (11) is set with one group of secondary vibration isolation phonon crystal vibrator component (6), every root three grades of vibration isolation phonon crystal supporting posts (12) are set with one group three grades vibration isolation phonon crystal vibrator component (7);
Three groups of one-level vibration isolation marmems compress top and bottom each self-forming one-level closed circuit ring of the shape memory alloy bar (19) in driven unit (14), these two one-level closed circuit rings are electrically connected with Line concentrator (9) by first-order traverse (8-1), three groups of secondary vibration isolation marmems compress top and bottom each self-forming secondary closed circuit ring of the shape memory alloy bar (19) in driven unit (16), these two secondary closed circuit rings are electrically connected with Line concentrator (9) by secondary wire (8-2), three groups of three grades of vibration isolation marmems compress each self-forming in top and bottom three grades of closed circuit rings of the shape memory alloy bar (19) in driven unit (15), these two three grades of closed circuit rings are electrically connected with Line concentrator (9) by three grades of wires (8-3), Line concentrator (9) is connected with power electric.
2. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 1 is adjustable, it is characterized in that: often organize one-level vibration isolation phonon crystal vibrator component (5), often organize secondary vibration isolation phonon crystal vibrator component (6) and often organize three grades of vibration isolation phonon crystal vibrator component (7) and form by multiple ring first vibration isolation phonon crystal oscillator (22) and multiple rings second vibration isolation phonon crystal oscillator (23) consistent with ring first vibration isolation phonon crystal oscillator (22) quantity, each ring first vibration isolation phonon crystal oscillator (22) is by aluminium, plumbous or copper becomes, each ring second vibration isolation phonon crystal oscillator (23) is made up of epoxy resin or nitrile rubber, one-level vibration isolation phonon crystal vibrator component (5), secondary vibration isolation phonon crystal vibrator component (6) and three grades of vibration isolation phonon crystal vibrator component (7) form with ring second vibration isolation phonon crystal oscillator (23) mutual splicing by ring first vibration isolation phonon crystal oscillator (22) that the cycle is alternately arranged.
3. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 1 is adjustable, it is characterized in that: often organize one-level vibration isolation phonon crystal vibrator component (5), often organize secondary vibration isolation phonon crystal vibrator component (6) and often organize three grades of vibration isolation phonon crystal vibrator component (7) and include multiple locally resonant type phonon crystal local oscillator (21), the cylindrical structural that each locally resonant type phonon crystal local oscillator (21) is integrated for inside and outside double-deck splicing; One-level vibration isolation phonon crystal supporting post (13), secondary vibration isolation phonon crystal supporting post (11) and three grades of vibration isolation phonon crystal supporting posts (12) are all gluedd joint multiple locally resonant type phonon crystals local oscillator (21) having the cycle equidistantly to arrange.
4. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 3 is adjustable, it is characterized in that: the endothecium structure (21-1) of each locally resonant type phonon crystal local oscillator (21) is nitrile rubber material, the layer structure (21-2) of each locally resonant type phonon crystal local oscillator (21) is epoxy resin or aluminium material.
5. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 3 or 4 is adjustable, is characterized in that: one-level vibration isolation phonon crystal supporting post (13), secondary vibration isolation phonon crystal supporting post (11) and three grades of vibration isolation phonon crystal supporting posts (12) are made by plumbous or Steel material.
6. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 1,2,3 or 4 is adjustable, is characterized in that: the shape that described secondary vibration isolation upper bracket (10) and vibration export bearing (4) is triangle, square, regular pentagon, regular hexagon or circle.
7. according to claim 1, the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap described in 2 or 3 is adjustable, it is characterized in that: every root one-level vibration isolation phonon crystal supporting post (13), the lower end of every root secondary vibration isolation phonon crystal supporting post (11) is all gluedd joint with one-level vibration isolation undersetting (17), the lower end of every root three grades of vibration isolation phonon crystal supporting posts (12) exports bearing (4) with vibration and glueds joint, upper compression end cap (18) inputs bearing (1) with vibration respectively and secondary vibration isolation upper bracket (10) glueds joint, lower compression end cap (20) is respectively with one-level vibration isolation undersetting (17) with vibrate and export bearing (4) and glued joint.
8. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 6 is adjustable, it is characterized in that: one-level vibration isolation undersetting (17) is fork-shaped bearing, this fork-shaped bearing has six support arms, the lower end of every root one-level vibration isolation phonon crystal supporting post (13) and every root secondary vibration isolation phonon crystal supporting post (11) is all gluedd joint with the corresponding support arm of one-level vibration isolation undersetting (17), the lower end of every root three grades of vibration isolation phonon crystal supporting posts (12) exports bearing (4) with vibration and glueds joint, compress end cap (20) under six to glued joint with the upper corresponding support arm of one-level vibration isolation undersetting (17).
9. the phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap according to claim 1 or 8 is adjustable, it is characterized in that: described vibration isolator also comprises multiple first screw and multiple second screw, secondary vibration isolation upper bracket (10) and vibration are exported bearing (4) and are removably connected by multiple first screw with side skin (2) respectively, and upper covering (3-1) and lower covering (3-2) are removably connected by multiple second screw with side skin (2) respectively.
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| CN107289055B (en) * | 2017-07-12 | 2019-12-31 | 广东科学技术职业学院 | Three-dimensional tunable local resonance type metamaterial magnetorheological vibration isolation support |
| CN108036017B (en) * | 2017-12-07 | 2019-10-18 | 上海宇航系统工程研究所 | Multimode locally resonant type phonon crystal vibration isolator |
| CN108374858B (en) * | 2018-01-26 | 2020-07-28 | 西安交通大学 | Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect |
| CN108662081B (en) * | 2018-04-16 | 2020-12-04 | 哈尔滨工程大学 | Three-dimensional phononic crystal vibration damper based on compaction force |
| CN110081111B (en) * | 2019-05-29 | 2024-08-09 | 北京林业大学 | Multi-ligament chiral structure with flexible hinge |
| CN110715008B (en) * | 2019-10-16 | 2020-11-27 | 中国人民解放军国防科技大学 | Local resonance superstructure isolator |
| CN111853141B (en) * | 2020-07-22 | 2021-05-18 | 四川大学 | Combined phonon crystal vibration isolator |
| CN113096632A (en) * | 2021-03-29 | 2021-07-09 | 杭州电子科技大学 | Shape memory alloy-based adjustable band gap phononic crystal and adjusting method |
| CN112901697A (en) * | 2021-03-29 | 2021-06-04 | 杭州电子科技大学 | Phononic crystal vibration isolation platform based on shape memory alloy and use method |
| CN113284479B (en) * | 2021-05-12 | 2024-02-13 | 杭州电子科技大学 | Phonon crystal with adjustable band gap based on deformed scatterer and adjusting method |
| CN114800982B (en) * | 2022-04-26 | 2023-08-29 | 北京航空航天大学宁波创新研究院 | Frequency-adjustable one-dimensional phonon crystal based on periodic thermal field and preparation method thereof |
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