CN104141722A - Band gap adjustable type phononic crystal vibration isolator based on shape memory alloy - Google Patents
Band gap adjustable type phononic crystal vibration isolator based on shape memory alloy Download PDFInfo
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Abstract
The invention discloses a band gap adjustable type phononic crystal vibration isolator based on shape memory alloy and relates to a vibration isolator. The band gap adjustable type phononic crystal vibration isolator based on shape memory alloy aims to solve the problems of existing one-dimensional phononic crystal vibration isolators that the periodicity of period materials is low, vibration isolating effect is poor, working space is limited, the band gap can not be adjusted, and the vibration isolation frequency range is narrow. The band gap adjustable type phononic crystal vibration isolator comprises a vibration input support, lateral skin, upper skin, lower skin, a secondary vibration isolation upper support, a vibration output support, a primary vibration isolation lower support, three primary vibration isolation phononic crystal support pillars, three secondary vibration isolation phononic crystal support pillars, three trinary vibration isolation phononic crystal support pillars, three sets of primary vibration isolation shape memory alloy compression driving components, three sets of secondary vibration isolation shape memory alloy compression driving components, three sets of trinary vibration isolation shape memory alloy compression driving components, three sets of primary vibration isolation phononic crystal components, three sets of seconday vibration isolation phononic crystal components and three sets of trinary vibration isolation phononic crystal components. The band gap adjustable type phononic crystal vibration isolator is used for vibration isolation and noise reduction.
Description
Technical field
What the present invention relates to is the vibration isolator in a kind of vibration insulation and noise reduction field.
Background technique
All exist various vibration problems in mechanical industry and other industrial departments, wherein many vibrations are all nuisance vibrations, and excessive vibration and the noise causing because of vibration, pollute the environment, and infringement people's is healthy.
People are having obtained major progress aspect the research of photonic crystal, and in view of the analogy of phonon crystal and photonic crystal, in recent ten years, phonon crystal becomes new study hotspot gradually.A key character of phonon crystal is its acoustic band gap, functional material or the structure with periodic structure and elastic wave band gap properties that are made up of two or more Elastic medium at phonon crystal.When elastic wave is propagated in phonon crystal, be subject to the effect of its intercycle structure, form special dispersion relations (also claiming band structure), the frequency range between dispersion relations curve is called band gap.In theory, the elastic wave propagation of band gap frequency range is suppressed.Therefore phonon crystal has broad application prospects in vibration isolation, noise reduction field.
Marmem has shape memory effect, when material occurs after certain distortion below under external force in martensite end temp, heating-up temperature exceedes the phase transformation conversion temperature of material, to there is martensite to austenitic transformation, now Material shrinkage, attempt to return to the shape before distortion, if material two ends Constrained, material internal can produce very large restoring force.The marmem with double process shape-memory effect shrinks repeatedly by heating cooling realization.Utilize this feature can make marmen.
The method that reduces at present mechanical structure noise mainly contains two classes, and the one, reduce the generation of vibration and noise as far as possible, this on the one hand can be by structure optimization, raising precision, or reduce the methods such as alignment error and realize; The 2nd, the vibration and noise having produced is taked to the measures such as shielding, vibration isolation.This can, by increasing damping control, add the measures such as acoustic hood and realize on the one hand.But it must be noted that, we can only weaken vibration by various means, make its impact causing within the scope of our requirement, and can not eliminate completely.
The periodicity of the cycle material that the one dimension phonon crystal vibration isolator using at present reaches in the time of certain whole geometry size and fixing lattice parameter is less, vibration isolating effect in band gap is poor, want to obtain good vibration isolating effect, the whole geometry size needing is larger, be not suitable for the environment of the restricted exigent vibration isolating effect again of working space, the band gap of existing one dimension phonon crystal vibration isolator is unadjustable simultaneously, makes its isolation frequency scope narrower.
Summary of the invention
The present invention is that the periodicity of the cycle material for solving current one dimension phonon crystal vibration isolator is less, vibration isolating effect is poor, working space band gap restricted and one dimension phonon crystal vibration isolator is unadjustable, the problem that isolation frequency scope is narrower, and then provide a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap.
The present invention solves the problems of the technologies described above the technological scheme of taking to be: of the present invention a kind of based on the adjustable phonon crystal vibration isolator involving vibrations input bearing of marmem band gap, side skin, upper covering, lower covering, secondary vibration isolation upper bracket, vibration output bearing, one-level vibration isolation undersetting, three one-level vibration isolation phonon crystal supporting posts, three secondary vibration isolation phonon crystal supporting posts, three three grades vibration isolation phonon crystal supporting posts, three groups of one-level vibration isolation marmems compress driven unit, three groups of secondary vibration isolation marmems compress driven unit, three groups of three grades of vibration isolation marmems compress driven unit, three groups of one-level vibration isolation phonon crystal assemblies, three groups of secondary vibration isolation phonon crystal assemblies and three groups three grades vibration isolation phonon crystal assemblies,
Secondary vibration isolation upper bracket is positioned at the top of vibration output bearing, the top of vibration output bearing is furnished with one-level vibration isolation undersetting, the middle part of secondary vibration isolation upper bracket is furnished with vibration input bearing, side skin is coated secondary vibration isolation upper bracket and vibration output bearing respectively, and side skin removably connects with secondary vibration isolation upper bracket and vibration output bearing respectively, upper covering covers on secondary vibration isolation upper bracket, lower covering covers on vibration output bearing, and upper covering and lower covering removably connect with side skin respectively;
It is identical with the structure that three groups of three grades of vibration isolation marmems compress driven units that three groups of one-level vibration isolation marmems compress driven units, three groups of secondary vibration isolation marmems compress driven units; Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap, shape memory alloy bar and lower compression end cap, and shape memory alloy bar is removably connected and is integrated by upper compression end cap and lower compression end cap;
Three one-level vibration isolation phonon crystal supporting posts and three groups of one-level vibration isolation marmems compress driven unit uniform being arranged between vibration input bearing and one-level vibration isolation undersetting respectively, one-level vibration isolation phonon crystal supporting post and shape memory alloy bar are vertically set up in parallel, the upper end of every one-level vibration isolation phonon crystal supporting post is inserted on vibration input bearing and the two Spielpassung, the lower end of every one-level vibration isolation phonon crystal supporting post is connected with one-level vibration isolation undersetting, upper compression end cap is connected with vibration input bearing, and lower compression end cap is connected with one-level vibration isolation undersetting;
Three secondary vibration isolation phonon crystal supporting posts and three groups of secondary vibration isolation marmems compress driven unit uniform being arranged between secondary vibration isolation upper bracket and one-level vibration isolation undersetting respectively, secondary vibration isolation phonon crystal supporting post and shape memory alloy bar are vertically set up in parallel, the upper end of every secondary vibration isolation phonon crystal supporting post is inserted on secondary vibration isolation upper bracket and the two Spielpassung, the lower end of every secondary vibration isolation phonon crystal supporting post is connected with one-level vibration isolation undersetting, upper compression end cap is connected with secondary vibration isolation upper bracket, lower compression end cap is connected with one-level vibration isolation undersetting,
Three three grades of vibration isolation phonon crystal supporting posts and three groups of three grades of vibration isolation marmems compress driven unit uniform being arranged between secondary vibration isolation upper bracket and vibration output bearing respectively, three grades of vibration isolation phonon crystal supporting posts and shape memory alloy bar are vertically set up in parallel, the upper end of every three grades vibration isolation phonon crystal supporting posts is inserted on secondary vibration isolation upper bracket and the two Spielpassung, the lower end of every three grades vibration isolation phonon crystal supporting posts is connected with vibration output bearing, upper compression end cap is connected with secondary vibration isolation upper bracket, and lower compression end cap is connected with vibration output bearing;
On every one-level vibration isolation phonon crystal supporting post, be set with one group of one-level vibration isolation phonon crystal vibrator component, on every secondary vibration isolation phonon crystal supporting post, be set with one group of secondary vibration isolation phonon crystal vibrator component, on every three grades vibration isolation phonon crystal supporting posts, be set with one group three grades vibration isolation phonon crystal vibrator component.
Beneficial effect of the present invention: one, the present invention creatively compresses driven unit to three grades of vibration isolation marmems and is optimized layout, the periodicity of having realized the cycle material in one dimension phonon crystal under the fixing constraint conditio of vibration isolator physical dimension increases, and the vibration isolating effect in band gap improves 60%-80%.Two, the present invention takes full advantage of the shape memory effect of marmem, realize the adjusting of phonon crystal band gap, can compress by changing vibration isolation marmems at different levels power on/off situation and the power-up sequence of driven unit, thereby realize the free adjustment of isolation frequency scope, expanded isolation frequency or the frequency band range of phonon crystal vibration isolator.Three, overall structure of the present invention is simple, easily manufactured, have wide range of applications, can realize three grades of vibration isolation in phonon crystal cycle direction, vibration isolating effect is outstanding, and there is the features such as environmental requirement is lower, the band gap of phonon crystal can regulate, applicable to various platform structures such as various precision type instrument support platforms, vibration-isolating platform, frangible explosive material carrier frames.
Brief description of the drawings
Fig. 1 is perspective view of the present invention, Fig. 2 is the overall structure schematic diagram of embodiment ten, Fig. 3 is the overall structure schematic diagram of removing after side skin, upper covering and lower covering, Fig. 4 is the structural representation that vibration isolation marmem of the present invention compresses driven unit, Fig. 5 is the structural representation that the present invention adopts local resonance type phonon crystal oscillator, and Fig. 6 is the local resonance type phonon crystal local oscillator structure schematic diagram of the specific embodiment of the present invention three.
Embodiment
Embodiment one: in conjunction with Fig. 1-Fig. 3 and Fig. 4 explanation, the a kind of of present embodiment inputs bearing 1 based on the adjustable phonon crystal vibration isolator involving vibrations of marmem band gap, side skin 2, upper covering 3-1, lower covering 3-2, secondary vibration isolation upper bracket 10, vibration output bearing 4, one-level vibration isolation undersetting 17, three one-level vibration isolation phonon crystal supporting posts 13, three secondary vibration isolation phonon crystal supporting posts 11, three three grades vibration isolation phonon crystal supporting posts 12, three groups of one-level vibration isolation marmems compress driven unit 14, three groups of secondary vibration isolation marmems compress driven unit 16, three groups of three grades of vibration isolation marmems compress driven unit 15, three groups of one-level vibration isolation phonon crystal assemblies 5, three groups of secondary vibration isolation phonon crystal assemblies 6 and three groups three grades vibration isolation phonon crystal assemblies 7,
Secondary vibration isolation upper bracket 10 is positioned at the top of vibration output bearing 4, the top of vibration output bearing 4 is furnished with one-level vibration isolation undersetting 17, the middle part of secondary vibration isolation upper bracket 10 is furnished with vibration input bearing 1, side skin 2 is coated secondary vibration isolation upper bracket 10 and vibration output bearing 4 respectively, and side skin 2 removably connects with secondary vibration isolation upper bracket 10 and vibration output bearing 4 respectively, upper covering 3-1 covers on secondary vibration isolation upper bracket 10, lower covering 3-2 covers on vibration output bearing 4, and upper covering 3-1 and lower covering 3-2 removably connect with side skin 2 respectively;
It is identical with the structure that three groups of three grades of vibration isolation marmems compress driven units 15 that three groups of one-level vibration isolation marmems compress driven unit 14, three groups of secondary vibration isolation marmems compress driven unit 16; Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap 18, shape memory alloy bar 19 and lower compression end cap 20, and shape memory alloy bar 19 is removably connected and is integrated by upper compression end cap 18 and lower compression end cap 20;
Three one-level vibration isolation phonon crystal supporting posts 13 and three groups of one-level vibration isolation marmems compress driven unit 14 uniform being arranged between vibration input bearing 1 and one-level vibration isolation undersetting 17 respectively, one-level vibration isolation phonon crystal supporting post 13 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every one-level vibration isolation phonon crystal supporting post 13 is inserted on vibration input bearing 1 and the two Spielpassung, the lower end of every one-level vibration isolation phonon crystal supporting post 13 is connected with one-level vibration isolation undersetting 17, upper compression end cap 18 is connected with vibration input bearing 1, lower compression end cap 20 is connected with one-level vibration isolation undersetting 17,
Three secondary vibration isolation phonon crystal supporting posts 11 and three groups of secondary vibration isolation marmems compress driven unit 16 uniform being arranged between secondary vibration isolation upper bracket 10 and one-level vibration isolation undersetting 17 respectively, secondary vibration isolation phonon crystal supporting post 11 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every secondary vibration isolation phonon crystal supporting post 11 is inserted on secondary vibration isolation upper bracket 10 and the two Spielpassung, the lower end of every secondary vibration isolation phonon crystal supporting post 11 is connected with one-level vibration isolation undersetting 17, upper compression end cap 18 is connected with secondary vibration isolation upper bracket 10, lower compression end cap 20 is connected with one-level vibration isolation undersetting 17,
Three three grades vibration isolation phonon crystal supporting posts 12 and three groups of three grades of vibration isolation marmems compress driven unit 15 uniform being arranged between secondary vibration isolation upper bracket 10 and vibration output bearing 4 respectively, three grades of vibration isolation phonon crystal supporting posts 12 and shape memory alloy bar 19 are vertically set up in parallel, the upper end of every three grades vibration isolation phonon crystal supporting posts 12 is inserted on secondary vibration isolation upper bracket 10 and the two Spielpassung, the lower end of every three grades vibration isolation phonon crystal supporting posts 12 is connected with vibration output bearing 4, upper compression end cap 18 is connected with secondary vibration isolation upper bracket 10, lower compression end cap 20 is connected with vibration output bearing 4,
On every one-level vibration isolation phonon crystal supporting post 13, be set with one group of one-level vibration isolation phonon crystal vibrator component 5, on every secondary vibration isolation phonon crystal supporting post 11, be set with one group of secondary vibration isolation phonon crystal vibrator component 6, on every three grades vibration isolation phonon crystal supporting posts 12, be set with one group three grades vibration isolation phonon crystal vibrator component 7.
The Spielpassung of present embodiment, in the time of shape memory alloy bar 19 contractions and elongation strain, ensure vibration input bearing 1, secondary vibration isolation upper bracket 10 is along one-level vibration isolation phonon crystal supporting post 13, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12 are downwards synchronous and move upward, be conducive to compress vibration input bearing 1 and one-level vibration isolation undersetting 17, secondary vibration isolation upper bracket 10 and one-level vibration isolation undersetting 17 and secondary vibration isolation upper bracket 10 and vibration output bearing 4, and then realize one-level vibration isolation phonon crystal assembly 5, the rigidity of secondary vibration isolation phonon crystal assembly 6 and three grades of vibration isolation phonon crystal assemblies 7 changes, thereby change the band gap of phonon crystal, realize well the free adjustment of isolation frequency scope.
Embodiment two: in conjunction with Fig. 2 and Fig. 3 explanation, every group of one-level vibration isolation phonon crystal vibrator component 5 of present embodiment, every group of secondary vibration isolation phonon crystal vibrator component 6 and three grades every group vibration isolation phonon crystal vibrator component 7 form by multiple ring the first vibration isolation phonon crystal oscillators 22 and multiple rings the second vibration isolation phonon crystal oscillator 23 consistent with ring the first vibration isolation phonon crystal oscillator 22 quantity, each ring the first vibration isolation phonon crystal oscillator 22 is by aluminium, lead or copper become, each ring the second vibration isolation phonon crystal oscillator 23 is made up of epoxy resin or nitrile rubber, one-level vibration isolation phonon crystal vibrator component 5, secondary vibration isolation phonon crystal vibrator component 6 and three grades of vibration isolation phonon crystal vibrator component 7 are mutually gluedd joint and are formed with ring the second vibration isolation phonon crystal oscillator 23 by the ring first vibration isolation phonon crystal oscillator 22 of cycle alternative arrangement.So arrange, the ring first vibration isolation phonon crystal oscillator 22 of cycle alternative arrangement mutually glueds joint and forms Bragg diffraction type phonon crystal with ring the second vibration isolation phonon crystal oscillator 23, is conducive to vibration insulation and noise reduction.Other is identical with embodiment one.
Embodiment three: in conjunction with Fig. 5 and Fig. 6 explanation, every group of one-level vibration isolation phonon crystal vibrator component 5 of present embodiment, every group of secondary vibration isolation phonon crystal vibrator component 6 and three grades every group vibration isolation phonon crystal vibrator component 7 include multiple local resonance type phonon crystal local oscillators 21, and each local resonance type phonon crystal local oscillator 21 is the inside and outside double-deck cylindrical structural being integrated that glueds joint; On one-level vibration isolation phonon crystal supporting post 13, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12, all glued joint the multiple local resonance type phonon crystal local oscillators 21 that have the cycle equidistantly to arrange.So arrange, the overall local resonance type phonon crystal local oscillator of inside and outside double-layer circular structure composition is conducive to reduce band gap frequency, and realizes the large wavelength of small size control.Other is identical with embodiment one.
Embodiment four: in conjunction with Fig. 6 explanation, the endothecium structure 21-1 of each local resonance type phonon crystal local oscillator 21 of present embodiment is nitrile rubber material, and the layer structure 21-2 of each local resonance type phonon crystal local oscillator 21 is epoxy resin or aluminium material.So arrange, meet actual demand.Other is identical with embodiment three.
Embodiment five: in conjunction with Fig. 5 explanation, one-level vibration isolation phonon crystal supporting post 13, secondary vibration isolation phonon crystal supporting post 11 and three grades of vibration isolation phonon crystal supporting posts 12 of present embodiment are made by lead or Steel material.So arrange, be conducive to the connection of local resonance type phonon crystal local oscillator 21.Other is identical with embodiment three or four.
Embodiment six: in conjunction with Fig. 1 explanation, the secondary vibration isolation upper bracket 10 described in present embodiment and the shape of vibration output bearing 4 are triangle, square, regular pentagon, regular hexagon or circle.So arrange, simple and easy to do, meet actual demand.Other is identical with embodiment one, two, three or four.
Embodiment seven: in conjunction with Fig. 3 explanation, all glued joint with one-level vibration isolation undersetting 17 every one-level vibration isolation phonon crystal supporting post 13 of present embodiment, the lower end of every secondary vibration isolation phonon crystal supporting post 11, glued joint with vibration output bearing 4 lower end of every three grades vibration isolation phonon crystal supporting posts 12, upper compression end cap 18 glueds joint with vibration input bearing 1 and secondary vibration isolation upper bracket 10 respectively, and lower compression end cap 20 glueds joint with one-level vibration isolation undersetting 17 and vibration output bearing 4 respectively.So arrange, connect simple and reliablely, adaptability is good, meets actual demand.Other is identical with embodiment one, two or three.
Embodiment eight: in conjunction with Fig. 3 explanation, the one-level vibration isolation undersetting 17 of present embodiment is fork-shaped bearing, this fork-shaped bearing has six support arms, all glued joint with the corresponding support arm of one-level vibration isolation undersetting 17 lower end of every one-level vibration isolation phonon crystal supporting post 13 and every secondary vibration isolation phonon crystal supporting post 11, the lower end of every three grades vibration isolation phonon crystal supporting posts 12 with glued joint with vibration output bearing 4, compress end cap 20 and support arm splicing corresponding on one-level vibration isolation undersetting 17 under six.So arrange, one-level vibration isolation undersetting is simple in structure, glueds joint simple and reliablely, and adaptability is good, meets actual demand.Other is identical with embodiment six.
Embodiment nine: in conjunction with Fig. 1 explanation, described in present embodiment, vibration isolator also comprises multiple the first screws and multiple the second screw, secondary vibration isolation upper bracket 10 and vibration output bearing 4 removably connect by multiple the first screws with side skin 2 respectively, and upper covering 3-1 and lower covering 3-2 removably connect by multiple the second screws with side skin 2 respectively.So arrange, easy to connect reliable, meet actual demand.Other is identical with embodiment one or eight.
Embodiment ten: in conjunction with Fig. 1 explanation, described in present embodiment, vibration isolator also comprises first-order traverse 8-1, secondary wire 8-2, three grades of wire 8-3 and Line concentrator 9, three groups of one-level vibration isolation marmems compress top and bottom each self-forming one-level closed circuit ring of the shape memory alloy bar 19 in driven unit 14, these two one-level closed circuit rings are electrically connected with Line concentrator 9 by first-order traverse 8-1, three groups of secondary vibration isolation marmems compress top and bottom each self-forming secondary closed circuit ring of the shape memory alloy bar 19 in driven unit 16, these two secondary closed circuit rings are electrically connected with Line concentrator 9 by secondary wire 8-2, three groups of three grades of vibration isolation marmems compress three grades of closed circuit rings of the each self-forming in top and bottom of the shape memory alloy bar 19 in driven unit 15, these two three grades of closed circuit rings are electrically connected with Line concentrator 9 by three grades of wire 8-3, Line concentrator 9 is electrically connected with power supply.So arrange, when actual use, compress that driven unit 14, secondary vibration isolation marmem compress driven unit 16, three grades of vibration isolation marmems compress driven unit 15 and are connected rear energising with Line concentrator 9 to one-level vibration isolation marmem, finally make the rigidity of one-level vibration isolation phonon crystal assembly 5, secondary vibration isolation phonon crystal assembly 6, three grades of vibration isolation phonon crystal assemblies 7 change, thereby the band gap that changes phonon crystal, meets actual demand.Other is identical with embodiment one or eight.
Working procedure
In conjunction with Fig. 1-Fig. 6, vibration isolator of the present invention can be realized the vibration of phonon crystal cycle direction and input bearing input by vibration, owing to there being the band gap effect of phonon crystal of pretightening force, this vibration excitation is decayed in certain frequency band range phonon crystal vibration band gap, finally after the vibration attenuation of three grades of vibration isolation phonon crystal assemblies, exporting bearing by vibration spreads out of vibration, can realize the function of three grades of vibration isolation, owing to having increased the periodicity of cycle material in one dimension phonon crystal, so the vibration isolating effect in band gap significantly improves.First shape memory alloy bar 19 is carried out to pretreatment, under austenitic temperature, shape memory alloy bar 19, in contracted state, when being cooled to Martensite temperature lower time, extends shape memory alloy bar 19 by applying pulling force.When compressing driven unit 14 to one-level vibration isolation marmem, secondary vibration isolation marmem compresses driven unit 16, three grades of vibration isolation marmems compress after driven unit 15 is connected with Line concentrator 9 and switch on (as shown in Figure 2), thereby can make shape memory alloy bar 19 shrink distortion and compress vibration input bearing 1 and one-level vibration isolation undersetting 17, secondary vibration isolation upper bracket 10 and one-level vibration isolation undersetting 17 and secondary vibration isolation upper bracket 10 and vibration output bearing 4, finally make one-level vibration isolation phonon crystal assembly 5, secondary vibration isolation phonon crystal assembly 6, the rigidity of three grades of vibration isolation phonon crystal assemblies 7 changes, thereby change the band gap of phonon crystal.Compress power on/off situation and the power-up sequence of driven unit by changing vibration isolation marmems at different levels, can realize the free adjustment of isolation frequency scope.
Claims (10)
1. one kind based on the adjustable phonon crystal vibration isolator of marmem band gap, it is characterized in that: its involving vibrations input bearing (1), side skin (2), upper covering (3-1), lower covering (3-2), secondary vibration isolation upper bracket (10), vibration output bearing (4), one-level vibration isolation undersetting (17), three one-level vibration isolation phonon crystal supporting posts (13), three secondary vibration isolation phonon crystal supporting posts (11), three three grades vibration isolation phonon crystal supporting posts (12), three groups of one-level vibration isolation marmems compress driven unit (14), three groups of secondary vibration isolation marmems compress driven unit (16), three groups of three grades of vibration isolation marmems compress driven unit (15), three groups of one-level vibration isolation phonon crystal assemblies (5), three groups of secondary vibration isolation phonon crystal assemblies (6) and three groups three grades vibration isolation phonon crystal assemblies (7),
Secondary vibration isolation upper bracket (10) is positioned at the top of vibration output bearing (4), the top of vibration output bearing (4) is furnished with one-level vibration isolation undersetting (17), the middle part of secondary vibration isolation upper bracket (10) is furnished with vibration input bearing (1), side skin (2) is coated secondary vibration isolation upper bracket (10) and vibration output bearing (4) respectively, and side skin (2) removably connects with secondary vibration isolation upper bracket (10) and vibration output bearing (4) respectively, upper covering (3-1) covers on secondary vibration isolation upper bracket (10), lower covering (3-2) covers on vibration output bearing (4), upper covering (3-1) and lower covering (3-2) removably connect with side skin (2) respectively,
It is identical that three groups of one-level vibration isolation marmems compress the structure that driven units (14), three groups of secondary vibration isolation marmems compress driven units (16) and three groups of three grades of vibration isolation marmems compression driven units (15); Every grade of vibration isolation marmem compresses driven unit and comprises compression end cap (18), shape memory alloy bar (19) and lower compression end cap (20), and shape memory alloy bar (19) is removably connected and is integrated by upper compression end cap (18) and lower compression end cap (20);
Three one-level vibration isolation phonon crystal supporting posts (13) and three groups of one-level vibration isolation marmems compress driven unit (14) uniform being arranged between vibration input bearing (1) and one-level vibration isolation undersetting (17) respectively, one-level vibration isolation phonon crystal supporting post (13) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every one-level vibration isolation phonon crystal supporting post (13) is inserted into vibration input bearing (1) above and the two Spielpassung, the lower end of every one-level vibration isolation phonon crystal supporting post (13) is connected with one-level vibration isolation undersetting (17), upper compression end cap (18) is connected with vibration input bearing (1), lower compression end cap (20) is connected with one-level vibration isolation undersetting (17),
Three secondary vibration isolation phonon crystal supporting posts (11) and three groups of secondary vibration isolation marmems compress driven unit (16) uniform being arranged between secondary vibration isolation upper bracket (10) and one-level vibration isolation undersetting (17) respectively, secondary vibration isolation phonon crystal supporting post (11) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every secondary vibration isolation phonon crystal supporting post (11) is inserted into secondary vibration isolation upper bracket (10) above and the two Spielpassung, the lower end of every secondary vibration isolation phonon crystal supporting post (11) is connected with one-level vibration isolation undersetting (17), upper compression end cap (18) is connected with secondary vibration isolation upper bracket (10), lower compression end cap (20) is connected with one-level vibration isolation undersetting (17),
Three three grades vibration isolation phonon crystal supporting posts (12) and three groups of three grades of vibration isolation marmems compress driven unit (15) uniform being arranged between secondary vibration isolation upper bracket (10) and vibration output bearing (4) respectively, three grades of vibration isolation phonon crystal supporting posts (12) and shape memory alloy bar (19) are vertically set up in parallel, the upper end of every three grades vibration isolation phonon crystal supporting posts (12) is inserted into secondary vibration isolation upper bracket (10) above and the two Spielpassung, the lower end of every three grades vibration isolation phonon crystal supporting posts (12) is connected with vibration output bearing (4), upper compression end cap (18) is connected with secondary vibration isolation upper bracket (10), lower compression end cap (20) is connected with vibration output bearing (4),
On every one-level vibration isolation phonon crystal supporting post (13), be set with one group of one-level vibration isolation phonon crystal vibrator component (5), on every secondary vibration isolation phonon crystal supporting post (11), be set with one group of secondary vibration isolation phonon crystal vibrator component (6), on every three grades vibration isolation phonon crystal supporting posts (12), be set with one group three grades vibration isolation phonon crystal vibrator component (7).
2. according to claim 1 a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap, it is characterized in that: every group of one-level vibration isolation phonon crystal vibrator component (5), every group of secondary vibration isolation phonon crystal vibrator component (6) and three grades every group vibration isolation phonon crystal vibrator component (7) are by multiple ring the first vibration isolation phonon crystal oscillators (22) and multiple rings second vibration isolation phonon crystal oscillator (23) composition consistent with ring the first vibration isolation phonon crystal oscillator (22) quantity, each ring the first vibration isolation phonon crystal oscillator (22) is by aluminium, lead or copper become, each ring the second vibration isolation phonon crystal oscillator (23) is made up of epoxy resin or nitrile rubber, one-level vibration isolation phonon crystal vibrator component (5), secondary vibration isolation phonon crystal vibrator component (6) and three grades of vibration isolation phonon crystal vibrator component (7) are mutually gluedd joint and are formed with ring the second vibration isolation phonon crystal oscillator (23) by the ring first vibration isolation phonon crystal oscillator (22) of cycle alternative arrangement.
3. according to claim 1 a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap, it is characterized in that: every group of one-level vibration isolation phonon crystal vibrator component (5), every group of secondary vibration isolation phonon crystal vibrator component (6) and three grades every group vibration isolation phonon crystal vibrator component (7) include multiple local resonance type phonon crystal local oscillators (21), each local resonance type phonon crystal local oscillator (21) is the inside and outside double-deck cylindrical structural being integrated that glueds joint; On one-level vibration isolation phonon crystal supporting post (13), secondary vibration isolation phonon crystal supporting post (11) and three grades of vibration isolation phonon crystal supporting posts (12), all glued joint the multiple local resonance type phonon crystal local oscillators (21) that have the cycle equidistantly to arrange.
4. according to claim 3 a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap, it is characterized in that: the endothecium structure (21-1) of each local resonance type phonon crystal local oscillator (21) is nitrile rubber material, and the layer structure (21-2) of each local resonance type phonon crystal local oscillator (21) is epoxy resin or aluminium material.
5. a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap according to described in claim 3 or 4, is characterized in that: one-level vibration isolation phonon crystal supporting post (13), secondary vibration isolation phonon crystal supporting post (11) and three grades of vibration isolation phonon crystal supporting posts (12) are made by lead or Steel material.
6. a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap according to described in claim 1,2,3 or 4, is characterized in that: the shape of described secondary vibration isolation upper bracket (10) and vibration output bearing (4) is triangle, square, regular pentagon, regular hexagon or circle.
7. according to claim 1, a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap described in 2 or 3, it is characterized in that: every one-level vibration isolation phonon crystal supporting post (13), all glued joint with one-level vibration isolation undersetting (17) lower end of every secondary vibration isolation phonon crystal supporting post (11), glued joint with vibration output bearing (4) lower end of every three grades vibration isolation phonon crystal supporting posts (12), upper compression end cap (18) glueds joint with vibration input bearing (1) and secondary vibration isolation upper bracket (10) respectively, lower compression end cap (20) glueds joint with one-level vibration isolation undersetting (17) and vibration output bearing (4) respectively.
8. according to claim 6 a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap, it is characterized in that: one-level vibration isolation undersetting (17) is fork-shaped bearing, this fork-shaped bearing has six support arms, all glued joint with the corresponding support arm of one-level vibration isolation undersetting (17) lower end of every one-level vibration isolation phonon crystal supporting post (13) and every secondary vibration isolation phonon crystal supporting post (11), the lower end of every three grades vibration isolation phonon crystal supporting posts (12) with glued joint with vibration output bearing (4), under six, compressing end cap (20) glueds joint with the upper corresponding support arm of one-level vibration isolation undersetting (17).
9. a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap according to described in claim 1 or 8, it is characterized in that: described vibration isolator also comprises multiple the first screws and multiple the second screw, secondary vibration isolation upper bracket (10) and vibration output bearing (4) removably connect by multiple the first screws with side skin (2) respectively, and upper covering (3-1) and lower covering (3-2) removably connect by multiple the second screws with side skin (2) respectively.
10. a kind of based on the adjustable phonon crystal vibration isolator of marmem band gap according to described in claim 1 or 8, it is characterized in that: described vibration isolator also comprises first-order traverse (8-1), secondary wire (8-2), three grades of wires (8-3) and Line concentrator (9), three groups of one-level vibration isolation marmems compress top and bottom each self-forming one-level closed circuit ring of the shape memory alloy bar (19) in driven unit (14), these two one-level closed circuit rings are electrically connected with Line concentrator (9) by first-order traverse (8-1), three groups of secondary vibration isolation marmems compress top and bottom each self-forming secondary closed circuit ring of the shape memory alloy bar (19) in driven unit (16), these two secondary closed circuit rings are electrically connected with Line concentrator (9) by secondary wire (8-2), three groups of three grades of vibration isolation marmems compress three grades of closed circuit rings of the each self-forming in top and bottom of the shape memory alloy bar (19) in driven unit (15), these two three grades of closed circuit rings are electrically connected with Line concentrator (9) by three grades of wires (8-3), Line concentrator (9) is electrically connected with power supply.
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| CN201410377170.1A CN104141722B (en) | 2014-08-01 | 2014-08-01 | The phonon crystal vibration isolator that a kind of Shape-based interpolation memory alloy band gap is adjustable |
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| CN107289055A (en) * | 2017-07-12 | 2017-10-24 | 广东科学技术职业学院 | The magnetorheological vibration isolating suspension of three-dimensional tunable locally resonant type Meta Materials |
| CN108036017A (en) * | 2017-12-07 | 2018-05-15 | 上海宇航系统工程研究所 | Multimode locally resonant type phonon crystal vibration isolator |
| CN108374858A (en) * | 2018-01-26 | 2018-08-07 | 西安交通大学 | One kind being based on the adjustable simple substance phonon crystal vibration isolator of Stress stiffening effect band gap |
| CN108662081A (en) * | 2018-04-16 | 2018-10-16 | 哈尔滨工程大学 | Three-dimensional phonon crystal vibration absorber based on pressing force formula |
| CN110081111A (en) * | 2019-05-29 | 2019-08-02 | 北京林业大学 | A kind of more ligament chiral structures containing flexible hinge |
| CN110715008A (en) * | 2019-10-16 | 2020-01-21 | 中国人民解放军国防科技大学 | Local resonance superstructure isolator |
| CN111853141A (en) * | 2020-07-22 | 2020-10-30 | 四川大学 | Combined phonon crystal vibration isolator |
| CN112901697A (en) * | 2021-03-29 | 2021-06-04 | 杭州电子科技大学 | Phononic crystal vibration isolation platform based on shape memory alloy and use method |
| CN113096632A (en) * | 2021-03-29 | 2021-07-09 | 杭州电子科技大学 | Shape memory alloy-based adjustable band gap phononic crystal and adjusting method |
| CN113284479A (en) * | 2021-05-12 | 2021-08-20 | 杭州电子科技大学 | Adjustable band gap phononic crystal based on deformable scatterer and adjusting method |
| CN114800982A (en) * | 2022-04-26 | 2022-07-29 | 北京航空航天大学宁波创新研究院 | Frequency-adjustable one-dimensional phonon crystal based on periodic thermal field and preparation method thereof |
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| CN107289055A (en) * | 2017-07-12 | 2017-10-24 | 广东科学技术职业学院 | The magnetorheological vibration isolating suspension of three-dimensional tunable locally resonant type Meta Materials |
| CN107289055B (en) * | 2017-07-12 | 2019-12-31 | 广东科学技术职业学院 | Three-dimensional tunable local resonance type metamaterial magnetorheological vibration isolation support |
| CN108036017A (en) * | 2017-12-07 | 2018-05-15 | 上海宇航系统工程研究所 | Multimode locally resonant type phonon crystal vibration isolator |
| CN108036017B (en) * | 2017-12-07 | 2019-10-18 | 上海宇航系统工程研究所 | Multimode locally resonant type phonon crystal vibration isolator |
| CN108374858B (en) * | 2018-01-26 | 2020-07-28 | 西安交通大学 | Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect |
| CN108374858A (en) * | 2018-01-26 | 2018-08-07 | 西安交通大学 | One kind being based on the adjustable simple substance phonon crystal vibration isolator of Stress stiffening effect band gap |
| CN108662081A (en) * | 2018-04-16 | 2018-10-16 | 哈尔滨工程大学 | Three-dimensional phonon crystal vibration absorber based on pressing force formula |
| CN110081111A (en) * | 2019-05-29 | 2019-08-02 | 北京林业大学 | A kind of more ligament chiral structures containing flexible hinge |
| CN110715008A (en) * | 2019-10-16 | 2020-01-21 | 中国人民解放军国防科技大学 | Local resonance superstructure isolator |
| CN111853141A (en) * | 2020-07-22 | 2020-10-30 | 四川大学 | Combined phonon crystal vibration isolator |
| CN112901697A (en) * | 2021-03-29 | 2021-06-04 | 杭州电子科技大学 | Phononic crystal vibration isolation platform based on shape memory alloy and use method |
| CN113096632A (en) * | 2021-03-29 | 2021-07-09 | 杭州电子科技大学 | Shape memory alloy-based adjustable band gap phononic crystal and adjusting method |
| CN113284479A (en) * | 2021-05-12 | 2021-08-20 | 杭州电子科技大学 | Adjustable band gap phononic crystal based on deformable scatterer and adjusting method |
| CN113284479B (en) * | 2021-05-12 | 2024-02-13 | 杭州电子科技大学 | Phonon crystal with adjustable band gap based on deformed scatterer and adjusting method |
| CN114800982A (en) * | 2022-04-26 | 2022-07-29 | 北京航空航天大学宁波创新研究院 | Frequency-adjustable one-dimensional phonon crystal based on periodic thermal field and preparation method thereof |
| CN114800982B (en) * | 2022-04-26 | 2023-08-29 | 北京航空航天大学宁波创新研究院 | Frequency-adjustable one-dimensional phonon crystal based on periodic thermal field and preparation method thereof |
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