CN108374858B - Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect - Google Patents

Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect Download PDF

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CN108374858B
CN108374858B CN201810079465.9A CN201810079465A CN108374858B CN 108374858 B CN108374858 B CN 108374858B CN 201810079465 A CN201810079465 A CN 201810079465A CN 108374858 B CN108374858 B CN 108374858B
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vibration isolation
photonic crystal
band gap
vibration
crystal
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CN108374858A (en
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李跃明
朱昀
周俊辰
耿谦
王迪
李珍
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Xian Jiaotong University
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Xian Jiaotong University
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16FSPRINGS; SHOCK-ABSORBERS; MEANS FOR DAMPING VIBRATION
    • F16F7/00Vibration-dampers; Shock-absorbers

Abstract

The invention discloses a simple substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect, which comprises an upper base, a lower base, a concentrator and a direct-current power supply, wherein the upper base is provided with a first hole; a plurality of vibration isolation photonic crystal supporting shafts are arranged between the upper base and the lower base, a group of photonic crystal unit components are sleeved on each vibration isolation photonic crystal supporting shaft, a pair of electromagnets with opposite homopolarity are detachably assembled on each photonic crystal unit, the electromagnets on the same group of photonic crystal units are mutually connected in series to form a closed circuit, each closed circuit ring is connected with a concentrator through a wire, and the concentrator is connected with a direct current power supply. The invention can solve the problems that the band gap of the conventional phononic crystal vibration isolator can not be adjusted, the preparation process is complicated and the vibration isolation frequency range is narrow.

Description

Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect
Technical Field
The invention belongs to the technical field of vibration isolation, relates to a vibration isolator, and particularly relates to a simple substance phonon crystal vibration isolator with adjustable band gap based on a stress rigidization effect.
Background
Various vibration problems exist in areas such as machine manufacturing, aerospace, and other engineering. Excessive harmful vibrations tend to cause fatigue failure or malfunction of structures, equipment, and especially for environmentally demanding sophisticated equipment. At present, methods for reducing vibration of mechanical structures can be mainly classified into two types: firstly, the vibration source is controlled, namely the generation of vibration and noise is reduced, on one hand, the vibration source can be realized by methods of structure optimization design, improvement of manufacturing precision, reduction of installation errors and the like; secondly, measures such as isolation, attenuation and the like are taken for the generated vibration and noise, so that the generated vibration and noise are weakened in the transmission process, and the damping system can be added to realize the purpose. However, the existing method can only weaken the vibration by various means, so that the influence caused by the vibration is within the required range and cannot be eliminated.
Phononic crystal materials that have emerged in recent years have vibrational characteristics, so-called elastic bandgaps, that are not found in conventional materials. When the elastic wave is transmitted in the phononic crystal, only the elastic wave with the characteristic frequency within a certain range can be smoothly transmitted due to the modulation effect of the internal periodic structure, and the elastic waves with other frequencies can be blocked. The elastic wave band gap of the phononic crystal has important significance in the fields of vibration reduction, noise reduction design and the like in the equipment structure, and is particularly applied to the range where the conventional damping material cannot exert the efficiency. Therefore, the novel material has wide application prospect in the aspects of structural vibration reduction, sound insulation, novel acoustic device research and development and the like.
However, the conventional preparation method of the multi-material phononic crystal is complex, the band gap range is determined by the initial design, the adjustability is not provided, and a proper micro-vibration working environment cannot be provided for precise tip equipment, so that the application of the multi-material phononic crystal is limited to a great extent.
Disclosure of Invention
The invention aims to provide a simple substance phononic crystal vibration isolator with adjustable band gap based on stress rigidization effect, which can solve the problems of unadjustable band gap, complex preparation process and narrower vibration isolation frequency range of the traditional phononic crystal vibration isolator.
The invention is realized by the following technical scheme:
the invention discloses a simple substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect, which comprises an upper base, a lower base, a concentrator and a direct-current power supply, wherein the upper base is provided with a first hole;
a plurality of vibration isolation photonic crystal supporting shafts are arranged between the upper base and the lower base, a group of photonic crystal unit components are sleeved on each vibration isolation photonic crystal supporting shaft, a pair of electromagnets with opposite homopolarity are detachably assembled on each photonic crystal unit, the electromagnets on the same group of photonic crystal units are mutually connected in series to form a closed circuit, each closed circuit ring is connected with a concentrator through a wire, and the concentrator is connected with a direct current power supply.
Preferably, the upper part of the lower base is provided with a lower vibration isolation support, the upper end of each support shaft of the vibration isolation phononic crystal is inserted on the upper base, and the lower end of each support shaft of the vibration isolation phononic crystal is connected with the lower vibration isolation support; and the upper part of the upper base and the lower part of the vibration isolation lower support are provided with pressing end covers.
Preferably, the vibration isolator further comprises an upper skin covering the upper base, a lower skin covering the lower base, and a side skin connected with the upper skin and the lower skin, wherein the side skin, the upper skin and the lower skin cover the periphery of the vibration isolator together.
Preferably, the lower end of the vibration isolation phononic crystal support shaft is in transition fit with the vibration isolation lower support, the upper compression end cover is connected with the upper base in a glued mode, and the lower compression end cover is connected with the vibration isolation lower support in a glued mode.
Preferably, the positive electrode and the negative electrode of each closed circuit ring are connected with binding posts uniformly distributed on the upper base, and the outer lead is connected with the inner lead through the binding posts.
Preferably, each phononic crystal unit comprises a first-stage scatterer and a second-stage scatterer which are sleeved on the vibration isolation phononic crystal supporting shaft from bottom to top, four resonance cantilevers are uniformly distributed on the first-stage scatterer at equal angles, and two groups of electromagnets with homopolar opposite polarities are correspondingly sleeved on the four resonance cantilevers.
Further preferably, each local resonance type phononic crystal cell is made of a non-ferromagnetic material by machining or an additive manufacturing process.
Still further preferably, the non-ferromagnetic material is aluminum, copper, engineering plastic or the like.
Further preferably, the input current is adjusted to adjust the magnetic field intensity between the electromagnets with the same poles oppositely arranged at the resonant cantilever end, so as to change the stress field inside the unit, and the vibration control equation is as follows:
[K+Kσ]-ω2[M]=[0];
where K is the structural stiffness matrix, M is the mass matrix, ω is the circular frequency, KσAdd stiffness matrix to the stress.
Preferably, the upper and lower bases are square, regular hexagonal or circular in shape.
Compared with the prior art, the invention has the following beneficial technical effects:
the simple substance phononic crystal vibration isolator based on the stress rigidization effect and with the adjustable band gap can realize the control of vibration in a band gap frequency range, vibration transmitted along the periodic direction of a phononic crystal unit is input through the upper base, the vibration in a certain frequency range is attenuated by utilizing the band gap characteristic of a local resonance type phononic crystal unit cell, and then the vibration passing through a local resonance type phononic crystal assembly is attenuated and then is transmitted out through the lower base. The advantages are embodied in particular in that:
1. the effective control of the vibration in the band gap frequency range is realized by depending on the energy band characteristics of the phononic crystal;
2. the stress rigidization effect of the structure is fully utilized, the adjustment of the photonic crystal band gap is realized, and the internal stress field of the photonic crystal unit can be changed by controlling the current of the electromagnet, so that the adjustment of the vibration isolation frequency range is realized, and the vibration isolation range of the photonic crystal vibration isolator is expanded;
3. the invention has simple integral structure, convenient manufacture, outstanding vibration isolation effect and wide application range, and is suitable for various platform structures such as various precision instrument supporting platforms, vibration isolation platforms and the like, and novel acoustic devices such as elastic wave channel switches and the like.
Drawings
FIG. 1 is a schematic view of the overall assembly structure of the present invention;
FIG. 2 is a schematic view of the overall assembly structure with the side, upper and lower skins removed;
FIG. 3 is a schematic partial detail view of FIG. 2;
FIG. 4 is a schematic diagram of a closed circuit loop connected to a hub and a DC power source via external conductors;
FIG. 5 is a schematic view of the assembly of a photonic crystal oscillator assembly of the present invention using a local resonance type;
FIG. 6 is a schematic diagram of a local resonance type photonic crystal unit according to the present invention.
Wherein, 1 is an upper base; 2 is an upper skin; 3 is a side skin; 4 is a lower skin; 5 is a pressing end; 6 is a vibration isolation phononic crystal supporting shaft; 7 is a binding post; 8 is a vibration isolation lower support; 9 is a lower base; 10 is a local resonance type phononic crystal component; 11 is a local resonance type phonon crystal unit cell; 12 is a resonant cantilever; 13-1 is a primary scatterer; 13-2 is a secondary scatterer; 14 is an electromagnet; 15 is an outer lead; 16 is an inner lead; 17 is a hub; 18 is a dc power supply.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
Referring to fig. 1-6, the invention discloses a simple substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect, which comprises an upper base 1, a lower base 9, a concentrator 17 and a direct current power supply 18; a plurality of vibration isolation photonic crystal supporting shafts 6 are arranged between an upper base 1 and a lower base 9, each vibration isolation photonic crystal supporting shaft 6 is sleeved with a group of local resonance type photonic crystal assemblies 10, each group of local resonance type photonic crystal assemblies 10 is composed of a plurality of local resonance type photonic crystal unit cells 11, each local resonance type photonic crystal unit cell 11 is detachably provided with a pair of electromagnets 14 with opposite poles, the electromagnets 14 on the same group of local resonance type photonic crystal assemblies 10 are mutually connected in series through an inner lead 16 to form a closed circuit, the positive pole and the negative pole of each closed circuit ring are connected with wiring terminals 7 evenly distributed on the upper base, the outer lead 15 is connected with the inner lead 16 through the wiring terminals 7, each closed circuit ring is connected with a concentrator 17 through the outer lead 15, and the concentrator 17 is connected with a direct current power supply 18.
The upper part of the lower base 9 is provided with a lower vibration isolation support 8, the upper end of each vibration isolation phonon crystal support shaft 6 is inserted on the upper base 1, and the lower end is connected with the lower vibration isolation support 8; all set up above last base 1 and vibration isolation undersetting below 8 and compress tightly end cover 5, still close last covering 2 on last base 1 including the lid, cover and close lower covering 4 on lower base 9 to and the side covering 3 of being connected with last covering 2 and lower covering 4, side covering 3 cladding isolator periphery. The lower end of the phononic crystal support shaft 6 is in transition fit with the vibration isolation lower support 8, the upper compression end cover 5 is connected with the upper base 1 in a glued mode, and the lower compression end cover 5 is connected with the vibration isolation lower support 8 in a glued mode.
Referring to fig. 3, each group of local resonance type photonic crystal assemblies 10 includes a plurality of local resonance type photonic crystal unit cells 11, and each local resonance type photonic crystal unit cell 11 has a certain complex spatial structure; the vibration isolation phononic crystal support column 6 is detachably connected with a plurality of periodically arranged local resonance type phononic crystal unit cells 11 through screws. Referring to fig. 6, each local resonance type phononic crystal unit cell 11 comprises a first-stage scatterer 13-1 and a second-stage scatterer 13-2 which are sleeved on the phononic crystal support shaft 6 from bottom to top, four resonance cantilevers 12 are uniformly distributed on the first-stage scatterer 13-1 at equal angles, and two groups of electromagnets 14 with the same poles opposite are correspondingly sleeved on the four resonance cantilevers 12. Each of the local resonance type phonon crystal cells 11 is divided into a connection portion having a large flexibility and a resonance portion having a concentrated mass according to its functionality.
Each local resonance type phononic crystal unit cell 11 is prepared by the means of mechanical processing, additive manufacturing and the like of the same non-ferromagnetic material such as aluminum, copper, engineering plastics and the like. The vibration-isolating phononic crystal support shaft 6 is made of the same non-ferromagnetic material as that used for the local resonance type phononic crystal unit cell 11, such as aluminum, copper, engineering plastics and the like.
Preferably, the upper and lower bases 1 and 9 are square, regular hexagonal or circular in shape.
The input current is adjusted, the magnetic field intensity between the groups of electromagnets 14 which are oppositely arranged at the end of the resonant cantilever 12 in the same pole can be adjusted, the stress field in the unit is changed, namely the so-called stress rigidization effect, and the vibration control equation considering the effect is as follows:
[K+Kσ]-ω2[M]=[0](1)
in the formula: k is the structural stiffness matrix, M is the mass matrix, omega is the circular frequency, KσAdd stiffness matrix to the stress. As shown in the above formula, the internal stress of the unit can generate additional rigidity to the structure, and affect the vibration characteristics of the local resonance type phononic crystal unit cell, thereby causing the energy band position and size of the phononic crystal to change.
Taking the photosensitive resin as an example, when the single-cell resonance cantilever bears an equivalent tensile stress with the magnitude of 12.5MPa (the tensile strength of the photosensitive resin is 51MPa), the front second-order band gap width is increased by more than 15%; the first order bandgap center frequency is raised by 410.5Hz, and the second order bandgap center frequency is raised by 203.5 Hz.
Referring to fig. 4, when the positive and negative ends of each circuit are connected to the concentrator 17 and powered on, each pair of electromagnets generates a repulsive magnetic force, and the resonance cantilever connected to the electromagnets is stretched, thereby generating a stress field inside the local resonance type photonic crystal unit cell. The phononic crystal band gap rises due to the stress-hardening effect of the structure. The vibration isolation frequency range can be freely adjusted by changing the input current to control the magnetic field force.
In summary, the vibration isolator of the present invention can realize control of vibration within a band gap frequency range, wherein vibration propagating along a periodic direction of the photonic crystal is input through the upper base, and is attenuated within a certain frequency range by using the band gap characteristics of the photonic crystal, and then the vibration is attenuated by the vibration isolation photonic crystal assembly and then is transmitted through the lower base. The phononic crystal unit piece in the invention can be prepared by any kind of non-ferromagnetic materials, the resonant cantilever in the unit is utilized to replace the cladding layer and the scatterer structure in the multi-phononic crystal, and the requirement on the manufacturing process is greatly reduced because the preparation material is single and the connection combination mode of materials among different components in the multi-phononic crystal does not need to be considered. The invention can solve the problems that the band gap of the conventional phononic crystal vibration isolator can not be adjusted, the preparation process is complicated and the vibration isolation frequency range is narrow.

Claims (8)

1. The simple substance phonon crystal vibration isolator is characterized by comprising an upper base (1), a lower base (9), a concentrator (17) and a direct current power supply (18);
a plurality of vibration isolation photonic crystal supporting shafts (6) are arranged between an upper base (1) and a lower base (9), each vibration isolation photonic crystal supporting shaft (6) is sleeved with a group of local resonance type photonic crystal assemblies (10), each group of local resonance type photonic crystal assemblies (10) consists of a plurality of local resonance type photonic crystal unit cells (11), each local resonance type photonic crystal unit cell (11) is detachably provided with two pairs of electromagnets (14) with opposite homopolarity, the electromagnets (14) on the same group of local resonance type photonic crystal assemblies (10) are mutually connected in series to form a closed circuit, each closed circuit ring is connected with a concentrator (17) through an external lead (15), and the concentrator (17) is connected with a direct current power supply (18);
each local resonance type phononic crystal unit cell (11) is made of a non-ferromagnetic material through a mechanical processing or additive manufacturing process, and the vibration isolation phononic crystal support shaft (6) is made of the same non-ferromagnetic material as the local resonance type phononic crystal unit cell (11);
each local resonance type phononic crystal unit cell (11) comprises a primary scatterer (13-1) and a secondary scatterer (13-2) which are sleeved on the vibration isolation phononic crystal supporting shaft (6) from bottom to top, four resonance cantilevers (12) are uniformly distributed on the primary scatterer (13-1) at equal angles, and two groups of electromagnets (14) with the same poles opposite are correspondingly sleeved on the four resonance cantilevers (12).
2. The elementary photonic crystal vibration isolator with the adjustable band gap based on the stress rigidization effect as claimed in claim 1, wherein a lower vibration isolation support (8) is arranged on the upper part of the lower base (9), the upper end of each supporting shaft (6) of the vibration isolation photonic crystal is inserted on the upper base (1), and the lower end is connected with the lower vibration isolation support (8); and the upper part of the upper base (1) and the lower part of the vibration isolation lower support (8) are respectively provided with a pressing end cover (5).
3. The elementary phonon crystal vibration isolator based on the stress rigidization effect and adjustable band gap according to claim 2, further comprising an upper skin (2) covered on the upper base (1), a lower skin (4) covered on the lower base (9), and a side skin (3) connected with the upper skin (2) and the lower skin (4), wherein the side skin (3) is wrapped on the periphery of the vibration isolator together with the upper skin (2) and the lower skin (4).
4. The elementary phononic crystal vibration isolator based on stress hardening effect band gap adjustment of claim 2, characterized in that the lower end of the vibration isolation phononic crystal supporting shaft (6) is in transition fit with the vibration isolation lower support (8), the upper compression end cover (5) is connected with the upper base (1) in a bonding mode, and the lower compression end cover (5) is connected with the vibration isolation lower support (8) in a bonding mode.
5. The elementary phonon crystal vibration isolator based on stress rigidization effect band gap adjustment according to claim 1, wherein the positive and negative poles of each closed circuit ring are connected with terminals (7) uniformly distributed on the upper base (1), and an outer lead (15) is connected with an inner lead (16) through the terminals (7).
6. The band gap adjustable elementary phononic crystal vibration isolator based on stress rigidization effect according to claim 1, wherein the non-ferromagnetic material is aluminum, copper or engineering plastic.
7. The elementary phononic crystal vibration isolator with adjustable band gap based on stress rigidization effect according to claim 1, wherein the intensity of magnetic field between electromagnets (14) which are installed at the end of a resonant cantilever (12) and have the same polarity oppositely can be adjusted by adjusting the magnitude of input current, the stress field inside the unit is changed, and the vibration control equation is as follows:
[K+Kσ]-ω2[M]=[0];
where K is the structural stiffness matrix, M is the mass matrix, ω is the circular frequency, KσAdd stiffness matrix to the stress.
8. The simple substance phonon crystal vibration isolator based on the stress rigidization effect band gap adjustability as claimed in any one of claims 1-7, characterized in that the shape of the upper base (1) and the lower base (9) is square, regular hexagon or round.
CN201810079465.9A 2018-01-26 2018-01-26 Elementary substance phonon crystal vibration isolator with adjustable band gap based on stress rigidization effect Active CN108374858B (en)

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CN109538674A (en) * 2018-11-22 2019-03-29 中国船舶重工集团公司第七〇九研究所 A kind of adjustable limiter in three-dimensional gap
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102635657A (en) * 2012-04-23 2012-08-15 哈尔滨工程大学 Phonon crystal angle bar with multidimensional damping function
CN104141721A (en) * 2014-08-01 2014-11-12 哈尔滨工业大学 Modular local resonance type photonic crystal vibration isolation pad
CN104141722A (en) * 2014-08-01 2014-11-12 哈尔滨工业大学 Band gap adjustable type phononic crystal vibration isolator based on shape memory alloy
CN104141720A (en) * 2014-07-29 2014-11-12 哈尔滨工业大学 Square grid plate with vibration isolation characteristic
EP3239973A1 (en) * 2016-04-28 2017-11-01 Eidgenössische Materialprüfungs- und Forschungsanstalt EMPA Phononic crystal vibration isolator with inertia amplification mechanism
CN107542827A (en) * 2017-10-17 2018-01-05 吉林大学 A kind of composite construction phonon crystal vibration isolating suspension

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102635657A (en) * 2012-04-23 2012-08-15 哈尔滨工程大学 Phonon crystal angle bar with multidimensional damping function
CN104141720A (en) * 2014-07-29 2014-11-12 哈尔滨工业大学 Square grid plate with vibration isolation characteristic
CN104141721A (en) * 2014-08-01 2014-11-12 哈尔滨工业大学 Modular local resonance type photonic crystal vibration isolation pad
CN104141722A (en) * 2014-08-01 2014-11-12 哈尔滨工业大学 Band gap adjustable type phononic crystal vibration isolator based on shape memory alloy
EP3239973A1 (en) * 2016-04-28 2017-11-01 Eidgenössische Materialprüfungs- und Forschungsanstalt EMPA Phononic crystal vibration isolator with inertia amplification mechanism
CN107542827A (en) * 2017-10-17 2018-01-05 吉林大学 A kind of composite construction phonon crystal vibration isolating suspension

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