CN104135283A - Device and method of bandwidth test of wide band gap semiconductor power device - Google Patents
Device and method of bandwidth test of wide band gap semiconductor power device Download PDFInfo
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Abstract
The invention discloses a device and a method of a bandwidth test of a wide band gap semiconductor power device. According to the device and the method, special requirements of a high-voltage, large-current and high-power wide band gap semiconductor power device on the bandwidth test are met, damage on the wide band gap semiconductor power device, which is caused by a series of problems, such as co-occurrence of high voltage and large current, is avoided, so that the power output by a test system is stabilized on a set reference power point, and the precise bandwidth test of the wide band gap semiconductor power device is effectively guaranteed.
Description
Technical field
The present invention relates to bandwidth test field, specifically a kind of bandwidth test device and method of Wide Bandgap Semiconductor Power Devices.
Background technology
Because Si power device is subject to the limit of its development, especially in high frequency, high temperature and high power field, more demonstrate its limitation, therefore develop wide band gap semiconductor device and more and more by people, paid close attention to.So-called wide bandgap semiconductor (WBG) mainly refers to the semi-conducting material that energy gap is greater than 2.2 electron-volts, comprises II-O, II-S, II-Se, III-N, SiC, diamond and some other compound semiconductor materials.These materials generally all have wider forbidden band, high breakdown electric field, high thermal conductivity, high electron saturation velocities, so they are more suitable in making high temperature, high frequency and high-power component than Si and GaAs.
Thus, realtime power monitoring when the accurate bandwidth test of broad stopband power semiconductor, full bandwidth operating characteristic and test just seems particularly important.
At present, the detection method that the tested semiconductor power device response signal of telecommunication can adopt has multiple: peak value keeps method, comparative measurement method, correlation detection etc., and different algorithms has pluses and minuses separately.Peak value keeps method: according to test gained pulse energy maximum and pulse width values, by calculating, try to achieve pulse peak power; But high repetitive frequency pulsed in the situation that, directly measure individual pulse energy and have any problem.Comparative measurement method: comparison expression is measured and introduce exactly a reference arm in original Fundamentals of Measurement, the measurement result of two measurement pickup arms is compared to computing and just can eliminate the impact of some extraneous factors, but its remarkable shortcoming is to be only applicable to lower-powered situation.Correlation detection: by analyzing the characteristic of noise and signal, know that signal is relevant to signal itself, and it is uncorrelated with noise, between noise, be also incoherent, according to the feature of the correlation of signal and noise randomness, processing signals, suppresses noise, improve the signal to noise ratio after decay, therefore use the signal detection system of Theory of correlation detection design to detect more accurately.
summary of the inventionthe bandwidth test device and method that the object of this invention is to provide a kind of Wide Bandgap Semiconductor Power Devices, the problem existing to solve prior art.
In order to achieve the above object, the technical solution adopted in the present invention is:
A bandwidth test device for Wide Bandgap Semiconductor Power Devices, is characterized in that: mainly comprise phase-locked loop frequency signal synthesis circuit, controlling of amplitude circuit, modulation circuit, delay circuit, signal source, realtime power monitoring, coherent detection, integrating circuit, analog to digital converter, cpu circuit, automatic gain control circuit, temperature phase-control circuit, time base circuit for generating etc.Described phase-locked loop frequency signal synthesis circuit output is connected with controlling of amplitude circuit input end, controlling of amplitude circuit output end is connected with modulation circuit input, modulation circuit output is connected with signal source circuit input, signal source circuit output is connected with realtime power supervisory circuit input, realtime power supervisory circuit output is connected with tested semiconductor device input, tested semiconductor device output signal access correlation detecting circuit; Meanwhile, modulation circuit output is connected with delay circuit input, and delay circuit output signal also accesses correlation detecting circuit; Tested semiconductor device output signal and delay circuit output signal are after correlation detecting circuit is processed, its output signal access integrating circuit, integrating circuit output is connected with digital to analog converter input, digital to analog converter and CPU processing unit communicate and are subject to it to control, and CPU processing unit is also controlled phase-locked loop frequency signal synthesis circuit.In addition, time base circuit for generating provide required time-base signal for phase-locked loop frequency signal synthesis circuit, it is steady that automatic gain control unit makes controlling of amplitude circuit realize signal amplitude
Fixed, temperature, phase control unit are realized temperature stability and the phase stability of signal source.
The bandwidth test method of described a kind of Wide Bandgap Semiconductor Power Devices, it is characterized in that: phase-locked loop frequency signal synthesis circuit is the required sinusoidal frequency signal of synthetic test under the control of CPU, through having after the controlling of amplitude circuit of automatic gain level function, by modulation circuit, carry out signal modulation, again by thering is temperature, the signal source circuit of phase control function is processed, through realtime power supervisory circuit, carry out signal power detection, after control, the required excitation modulation signal of tested semiconductor device in being tested, tested semiconductor device produces corresponding output sinusoidal electric signals to this, simultaneously, the modulation signal of modulation circuit output is through the time delay of delay circuit, after shaping, export corresponding modulation reference signals, then, the output sinusoidal electric signals of modulation reference signals and tested semiconductor device is carried out Autocorrelation Detection, this correlation detection signal is the response signal of the tested semiconductor device under this modulating frequency through the integral output voltage of integrating circuit, tested semiconductor device responds signal is analog signal, and after analog to digital converter carries out A/D conversion, the digital signal that generation can be identified by CPU, delivers to CPU processing unit circuit and carry out the control processing that tested semiconductor device is corresponding.When carrying out analog bandwidth actual measurement, the sinusoidal signal generator that signal source output voltage is proofreaied and correct drives, the first output current in low-signal frequencies (the 1kHz order of magnitude) measurement products, then make signal frequency progressively increase, increase modulating frequency until the response of tested semiconductor power device reaches regulation requirement, until measured electric current drops to 0.70 times of low-signal frequencies, now corresponding frequency is half-power frequency or 3dB droping frequency, can obtain the analog bandwidth of tested semiconductor power device.
The present invention is in the accurate bandwidth test of broad stopband power semiconductor, adopted a kind of bandwidth test technology with the Wide Bandgap Semiconductor Power Devices of realtime power monitoring function, the i.e. semiconductor power device analog bandwidth measuring technology based on correlation detection, this technical conceive is ingenious, and circuit is reliable and practical.Basic ideas are as follows: phase-locked loop is the required sinusoidal frequency signal of synthetic test under the control of CPU, after ALC automatic gain level controlling of amplitude, carry out signal modulation, obtain testing required excitation modulation signal, tested semiconductor power device produces corresponding output sinusoidal electric signals to this, it carries out auto-correlation with the modulation reference signals after time delay, shaping, and the voltage of integration output is the response of semiconductor power device under this modulating frequency.Increase modulating frequency until the response of tested semiconductor power device reaches regulation requirement, can obtain the analog bandwidth of tested semiconductor power device.
The present invention adopts a kind of coherent detection bandwidth test method of realtime power monitoring, can realize quick bandwidth test and realtime power monitoring.There is wider bandwidth test ability, and lower bandwidth frequency test error; Realize stronger power monitoring ability, and lower power monitoring error.
The invention has the beneficial effects as follows: first adopt phase-locked loop frequency signal synthetic technology, improve frequency response performance, improve frequency accuracy and stability; Next adopts correlation detection technology, has realized the precision measurement of bandwidth; Creatively adopt in addition realtime power monitoring technique, realize the power stability of test macro, guaranteed tested semi-conductive Security of test.
Accompanying drawing explanation
Fig. 1 is apparatus of the present invention structural principle block diagram.
Fig. 2 is phase-locked loop frequency signal composition principle figure.
Fig. 3 is controlling of amplitude schematic diagram.
Fig. 4 is realtime power monitoring schematic diagram.
Embodiment
Shown in Figure 1, a bandwidth test device for Wide Bandgap Semiconductor Power Devices, is characterized in that: mainly comprise phase-locked loop frequency signal synthesis circuit, controlling of amplitude circuit, modulation circuit, delay circuit, signal source, realtime power monitoring, coherent detection, integrating circuit, analog to digital converter, cpu circuit, automatic gain control circuit, temperature phase-control circuit, time base circuit for generating etc.Described phase-locked loop frequency signal synthesis circuit output is connected with controlling of amplitude circuit input end, controlling of amplitude circuit output end is connected with modulation circuit input, modulation circuit output is connected with signal source circuit input, signal source circuit output is connected with realtime power supervisory circuit input, realtime power supervisory circuit output is connected with tested semiconductor device input, tested semiconductor device output signal access correlation detecting circuit; Meanwhile, modulation circuit output is connected with delay circuit input, and delay circuit output signal also accesses correlation detecting circuit; Tested semiconductor device output signal and delay circuit output signal are after correlation detecting circuit is processed, its output signal access integrating circuit, integrating circuit output is connected with digital to analog converter input, digital to analog converter and CPU processing unit communicate and are subject to it to control, and CPU processing unit is also controlled phase-locked loop frequency signal synthesis circuit.In addition, time base circuit for generating provide required time-base signal for phase-locked loop frequency signal synthesis circuit, automatic gain control unit makes controlling of amplitude circuit
Realize signal amplitude stable, temperature, phase control unit are realized temperature stability and the phase stability of signal source.
Phase-locked loop frequency signal synthesis circuit is the required sinusoidal frequency signal of synthetic test under the control of CPU, through having after the controlling of amplitude circuit of automatic gain level function, by modulation circuit, carry out signal modulation, again by thering is temperature, the signal source circuit of phase control function is processed, through realtime power supervisory circuit, carry out signal power detection, after control, the required excitation modulation signal of tested semiconductor device in being tested, tested semiconductor device produces corresponding output sinusoidal electric signals to this, simultaneously, the modulation signal of modulation circuit output is through the time delay of delay circuit, after shaping, export corresponding modulation reference signals, then, the output sinusoidal electric signals of modulation reference signals and tested semiconductor device is carried out Autocorrelation Detection, this correlation detection signal is the response signal of the tested semiconductor device under this modulating frequency through the integral output voltage of integrating circuit, tested semiconductor device responds signal is analog signal, and after analog to digital converter carries out A/D conversion, the digital signal that generation can be identified by CPU, delivers to CPU processing unit circuit and carry out the control processing that tested semiconductor device is corresponding.When carrying out analog bandwidth actual measurement, the sinusoidal signal generator that signal source output voltage is proofreaied and correct drives, the first output current in low-signal frequencies (the 1kHz order of magnitude) measurement products, then make signal frequency progressively increase, increase modulating frequency until the response of tested semiconductor power device reaches regulation requirement, until measured electric current drops to 0.70 times of low-signal frequencies, now corresponding frequency is half-power frequency or 3dB droping frequency, can obtain the analog bandwidth of tested semiconductor power device.
Operation principle flow process by above-mentioned theory diagram can be found out, in the accurate bandwidth test of broad stopband power semiconductor, adopted the signal testing method of unique coherent detection, realized the precision measurement of broad stopband power semiconductor bandwidth, on this basis, also creatively adopt a kind of realtime power monitoring technique of uniqueness, guaranteed the power stability of whole test macro, further improved reliability, the accuracy of the bandwidth test of Wide Bandgap Semiconductor Power Devices.
Analog bandwidth test circuit embodiment of the present invention is as shown in Figure 1: according to standard, when analog bandwidth is measured, the sinusoidal signal generator that signal source should be proofreaied and correct with constant voltage or output voltage drives, the first output current in low-signal frequencies (the 1kHz order of magnitude) measurement products, then make signal frequency progressively increase, until measured electric current drops to 0.70 times of low-signal frequencies, now corresponding frequency is half-power frequency or 3dB droping frequency, i.e. analog bandwidth.
Circuit theory diagrams of the present invention are as shown in Fig. 1.In figure, for key parameter aspects such as frequency, amplitude, power, adopted respectively corresponding innovative design method, main circuit parameter designing is as follows:
1. the synthetic design of phase-locked loop frequency signal
In the synthetic design of phase-locked loop frequency signal, adopted a kind of method for designing that can follow the tracks of the closed loop automatic control technology of input signal phase place, as shown in Figure 2.Phase-locked loop frequency synthesizer is a kind of designing technique that adopts phase-locked loop to carry out frequency synthesis, its operation principle is that the reference signal of the radiofrequency signal of voltage controlled oscillator generation and crystal oscillator output is carried out respectively to frequency division, obtain two approximately equalised signals of frequency, and deliver to phase discriminator and compare, output error signal, after filtering, go to control the output of voltage controlled oscillator, make the frequency signal of voltage controlled oscillator output keep stable.
In figure, phase discriminator adopts HMC439, and frequency is up to 1300MHz, and single-side belt phase noise is only-153dBc/Hz that the operating frequency that it is higher and ultralow sideband noise, make loop have wide loop bandwidth, high conversion rate, low phase noise; Frequency divider adopts SP8680 variable-modulus divider, its operating rate up to 650MHz and 1/10
4frequency division ability, make loop realize higher frequency resolution; Voltage controlled oscillator adopts 1L035 high stable frequency output voltage controlled oscillator, has good temperature compensation function, and temperature response frequency error is only ± 2.5ppm.Circuit design has reached the synthetic target of low frequency signal spuious, full frequency band.
2. controlling of amplitude design
In controlling of amplitude design, adopted the method for designing of the controlled adjustment of low noise, as shown in Figure 3.Its operation principle is first output signal to be carried out to signal demodulator, signal demodulator level is input to the inverting input of low noise amplifier, carrying out low noise with the reference voltage of in-phase end relatively amplifies, the error amplification signal of low noise amplifier is input to low pass filter, low-pass filtering produces corresponding voltage signal, finally by controllable amplifier adjustment, output signal amplitude is equated with reference value.
In figure, wave detector adopts the rms detector AD637 of high-precision and high-stability.The feature of this wave detector is: can directly record the authentic and valid value of various waveforms, certainty of measurement is high, and response time and signal amplitude are irrelevant; Comparator adopts the OP27G comparator of high accuracy, low noise, low input bias current; Controllable amplifier adopts the PMOS power amplifier that line regulation is superior, makes the reference voltage level of output be easy to control.Circuit design has reached the better design object of amplitude 500mV, error 2%.
3. realtime power monitoring system design
In realtime power monitoring system design, adopted the realtime power method for designing based on digital program controlled technology, as shown in Figure 4.CPU delivers to the digital power parameter of setting the DA transducer of 12, DA transducer is converted to digital power parameter after corresponding analog signal, output to preamplifying circuit, through amplifying rear drive power amplifier unit, detecting unit detects the power output of power amplifier unit, detection signal is outputed to the DA transducer of 12, and AD converter is converted to simulated power parameter after corresponding digital signal, deliver to again CPU element and carry out processing controls, thereby complete the monitoring of realtime power closed loop.
In figure, CPU adopts the dsp processor LF2407 processor of TI company, it can expand 16 fixed-point calculation DSP control abilities of external memory storage, and the conversion speed characteristic of minimum 500nS, at aspects such as processing speed, intellectualities, there is powerful processing controls function; Power detection part adopts the AD of 12, and power is controlled the DA that drive part adopts 12, is detecting and controlling the required precision that all reaches realtime power monitoring system design aspect two; Power amplifier unit adopts AD8367 circuit, the Shi YidBWei unit's linear change that guarantees to gain in input signal is from audio frequency to 500MH z bandwidth.
In the present invention, lowest-bandwidth frequency test value is 100Hz, and high bandwidth frequency test value is 500MHz; Minimum power test value is 1mW, and maximum power test value is 1000W.
By experimental circuit test data result, shown: 1, circuit has wider bandwidth test ability, can realize the bandwidth test in 100Hz to 500MHz scope, the full test error of bandwidth frequency is only 0.34%; 2, circuit has stronger power monitoring ability, can realize the power monitoring in 1mW to 1000W scope, and the full test error of power monitoring is only 0.31%; Illustrate that circuit has very wide bandwidth test scope and good realtime power monitoring function, has reached the design object of patent of the present invention.
The present invention has adopted a kind of accurate measuring technology of bandwidth with the Wide Bandgap Semiconductor Power Devices of realtime power monitoring function, high pressure, large electric current, the specific (special) requirements of high-power Wide Bandgap Semiconductor Power Devices to bandwidth test have been met, avoided that the common generation etc. of high pressure, large electric current is a series of causes tested Wide Bandgap Semiconductor Power Devices to damage problem, make the power stability of test macro output on the reference power point arranging, and effectively guaranteed the precise bandwidth test of Wide Bandgap Semiconductor Power Devices.
Claims (2)
1. a bandwidth test device for Wide Bandgap Semiconductor Power Devices, is characterized in that: mainly comprise phase-locked loop frequency signal synthesis circuit, controlling of amplitude circuit, modulation circuit, delay circuit, signal source, realtime power monitoring, coherent detection, integrating circuit, analog to digital converter, cpu circuit, automatic gain control circuit, temperature phase-control circuit, time base circuit for generating etc.; Described phase-locked loop frequency signal synthesis circuit output is connected with controlling of amplitude circuit input end, controlling of amplitude circuit output end is connected with modulation circuit input, modulation circuit output is connected with signal source circuit input, signal source circuit output is connected with realtime power supervisory circuit input, realtime power supervisory circuit output is connected with tested semiconductor device input, tested semiconductor device output signal access correlation detecting circuit; Meanwhile, modulation circuit output is connected with delay circuit input, and delay circuit output signal also accesses correlation detecting circuit; Tested semiconductor device output signal and delay circuit output signal are after correlation detecting circuit is processed, its output signal access integrating circuit, integrating circuit output is connected with digital to analog converter input, digital to analog converter and CPU processing unit communicate and are subject to it to control, and CPU processing unit is also controlled phase-locked loop frequency signal synthesis circuit; In addition, time base circuit for generating provide required time-base signal for phase-locked loop frequency signal synthesis circuit, it is stable that automatic gain control unit makes controlling of amplitude circuit realize signal amplitude, and temperature, phase control unit are realized temperature stability and the phase stability of signal source.
2. the bandwidth test method of a kind of Wide Bandgap Semiconductor Power Devices according to claim 1, it is characterized in that: phase-locked loop frequency signal synthesis circuit is the required sinusoidal frequency signal of synthetic test under the control of CPU, through having after the controlling of amplitude circuit of automatic gain level function, by modulation circuit, carry out signal modulation, again by thering is temperature, the signal source circuit of phase control function is processed, through realtime power supervisory circuit, carry out signal power detection, after control, the required excitation modulation signal of tested semiconductor device in being tested, tested semiconductor device produces corresponding output sinusoidal electric signals to this, simultaneously, the modulation signal of modulation circuit output is through the time delay of delay circuit, after shaping, export corresponding modulation reference signals, then, the output sinusoidal electric signals of modulation reference signals and tested semiconductor device is carried out Autocorrelation Detection, this correlation detection signal is the response signal of the tested semiconductor device under this modulating frequency through the integral output voltage of integrating circuit, tested semiconductor device responds signal is analog signal, and after analog to digital converter carries out A/D conversion, the digital signal that generation can be identified by CPU, delivers to CPU processing unit circuit and carry out the control processing that tested semiconductor device is corresponding, when carrying out analog bandwidth actual measurement, the sinusoidal signal generator that signal source output voltage is proofreaied and correct drives, the first output current in low-signal frequencies (the 1kHz order of magnitude) measurement products, then make signal frequency progressively increase, increase modulating frequency until the response of tested semiconductor power device reaches regulation requirement, until measured electric current drops to 0.70 times of low-signal frequencies, now corresponding frequency is half-power frequency or 3dB droping frequency, can obtain the analog bandwidth of tested semiconductor power device.
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| CN109521407B (en) * | 2018-12-20 | 2020-10-27 | 陕西黄河集团有限公司 | Working bandwidth testing method for radar emission subsystem |
| CN112187573A (en) * | 2020-09-21 | 2021-01-05 | 英彼森半导体(珠海)有限公司 | Signal bandwidth test circuit of communication device |
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Application publication date: 20141105 |