CN104135141A - Energy obtaining circuit for series-connected IGBT dynamic voltage balancing control - Google Patents
Energy obtaining circuit for series-connected IGBT dynamic voltage balancing control Download PDFInfo
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- CN104135141A CN104135141A CN201410401656.4A CN201410401656A CN104135141A CN 104135141 A CN104135141 A CN 104135141A CN 201410401656 A CN201410401656 A CN 201410401656A CN 104135141 A CN104135141 A CN 104135141A
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- 230000003068 static effect Effects 0.000 claims abstract description 32
- 239000003990 capacitor Substances 0.000 claims abstract description 17
- 230000000694 effects Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Abstract
The invention relates to an energy obtaining circuit for series-connected IGBT dynamic voltage balancing control. The energy obtaining circuit comprises an RCD buffer circuit energy obtaining circuit and a static resistor energy obtaining circuit, wherein the RCD buffer circuit energy obtaining circuit obtains energy from a capacitor of an RCD buffer circuit connected with an IGBT in parallel, and the static resistor energy obtaining circuit obtains energy from a static resistor connected with the IGBT in parallel. The RCD buffer circuit energy obtaining circuit and the static resistor energy obtaining circuit respectively achieve collected output through an output diode. Switching losses of the IGBT are converted into electric energy necessary for control systems. According to the energy obtaining circuit, a stable direct current power supply is provided, the control circuit complexity degree and cost are reduced, system stability is improved, meanwhile, the impact of overvoltage and large current on a device is reduced, switching losses of the device are reduced, the buffer effect of the series-connected IGBT buffer circuit is improved, switching losses and temperature rise of the device are reduced, and system efficiency is improved.
Description
Technical field
The present invention relates to a kind of energy conversion technique, particularly a kind of getting of controlling for series IGBT dynamic voltage balancing can circuit.
Background technology
In widely applying the high voltage device of power electronic technology system, single IGBT cannot meet the demands, and must be composed in series with a plurality of IGBT.Large capacity flexible DC power transmission system for example, its voltage often reaches hundreds of kilovolt, and wherein converter valve is composed in series by powerful IGBT exactly, and its valve section device series connection quantity is in series according to the IGBT that carries voltage by different capabilities.Large capacity inverter, dynamic reactive compensation circuit also often can be used IGBT cascaded structure.
But IGBT when series connection, the static parameter causing in semiconductor technology due to device is different, and the dynamic parameter causing on circuit topology is different, and gate drive signal is asynchronous, has all caused the Voltage unbalance of series connection device.Especially dynamically time, problem can be more serious, sometimes even causes device to damage because of overvoltage.Therefore must control to dynamic electric voltage dynamic voltage balancing technology that Here it is.
In dynamic voltage balancing control circuit, there are operational amplifier chip, fpga chip and other device.Each IGBT needs a control circuit, also needs the fixed power source that an E end of take IGBT is common segment.If employing power source special, due to the high voltage of IGBT itself, DC power supply there will be the series of problems such as electrical isolation, position, circuit, has increased cost, complexity and the unsteadiness of control system.
To sum up, the string of powerful IGBT need the control system of dynamic voltage balancing to guarantee the safety of the stable and device of circuit topology.The dynamic voltage balancing of each IGBT of this system is controlled all needs a stable low-voltage dc power supply.
Summary of the invention
The present invention be directed to the unbalanced dynamic voltage balancing control problem of series IGBT dynamic electric voltage, having proposed a kind of getting of controlling for series IGBT dynamic voltage balancing can circuit, utilize the electric capacity in buffer circuit, convert the switching loss in IGBT to dynamic voltage balancing and control needed low-voltage dc power supply, reduced the switching loss of IGBT simultaneously, improve the voltage current impact in IGBT switching process, improved system effectiveness.
Technical scheme of the present invention is: a kind of getting of controlling for series IGBT dynamic voltage balancing can circuit, comprise from the RCD buffer circuit in parallel with IGBT electric capacity get can RCD buffer circuit get can circuit, and from the static resistance in parallel with IGBT, get can static resistance get can circuit, RCD buffer circuit get can circuit and static resistance get and can through output diode, collect output respectively by circuit.
Described RCD buffer circuit is got and can be formed by circuit:
After the first electric capacity, auxiliary switch device, fly-wheel diode series connection, be connected in parallel on the electric capacity two ends in the RCD buffer circuit of IGBT, wherein auxiliary switch device and fly-wheel diode differential concatenation, the first isolating transformer primary side is connected in parallel on fly-wheel diode two ends, the first isolating transformer secondary side output is after rectifier bridge rectification, through filter capacitor and storage capacitor in parallel, finally again through output diode output.
The base drive signal of described auxiliary switch device and IGBT gate drive signal frequency, duty ratio are identical, open simultaneously or turn-off.
Described static resistance is got and can be formed by circuit:
The 3rd Capacitance parallel connection is at static voltage sharing two ends, two diodes are connected in parallel on the 3rd electric capacity two ends after connecting with two switching devices respectively, the negative electrode of one of them diode connects second transformer primary side one end, and the anode of another diode connects the primary side other end of the second transformer; The secondary side two ends of the second transformer connect through another two diode anodes respectively, their negative electrode all connects inductance one end, another termination static resistance of inductance is got energy circuit output diode, between secondary side one end of the second transformer and inductance other end output, connects the 4th electric capacity.。
Beneficial effect of the present invention is: the present invention controls for series IGBT dynamic voltage balancing, and get can circuit, and the switching loss of IGBT is converted into the necessary electric energy of various control system.This circuit can not only provide galvanic current source, has reduced complexity and the cost of control circuit, has improved the stability of a system; Meanwhile, reduce overvoltage, the impact of large electric current to device, reduced the switching loss of device, improved the buffering effect of series IGBT buffer circuit; And reduced switching loss and the temperature rise of device, improved system effectiveness.The active voltage control system that can be widely used in as series IGBT in high voltage direct current transmission, high-vol provides required electric energy, also electrical power storage can be got up supply with monitoring, sensor use simultaneously, has improved non-maintaining property, reliability.
Accompanying drawing explanation
Fig. 1 is that the present invention gets circuit diagram that can and realize efficient buffering from IGBT switching loss;
Fig. 2 is that RCD buffer circuit of the present invention is got energy circuit diagram;
Fig. 3 is that the present invention installs the devices switch loss comparison diagram that RCD buffer circuit is got energy circuit front and back;
Fig. 4 is that static voltage sharing of the present invention is got energy circuit diagram.
Embodiment
From IGBT switching loss, get as shown in Figure 1 circuit diagram that can and realize efficient buffering, originally get and can comprise the electric capacity from the RCD buffer circuit in parallel with IGBT by circuit, and obtain electric energy in the static resistance in parallel with IGBT, static resistance is got can circuit to get can hold and is connected in parallel on static voltage sharing Rs2 two ends, and static resistance is got energy circuit output end and exported through diode D2; RCD buffer circuit is got can circuit to get and can hold on the electric capacity being connected in parallel in RCD buffer circuit, RCD buffer circuit get can circuit output end through diode D3 output, after two parts output collects, as the whole energy circuit of getting, export together.
RCD buffer circuit is got energy circuit diagram as shown in Figure 2, after 4 series connection of capacitor C 1, auxiliary switch device Q, sustained diode, be connected in parallel on the capacitor C two ends in the RCD buffer circuit of IGBT, wherein auxiliary switch device Q and sustained diode 4 differential concatenations, isolating transformer T1 primary side is connected in parallel on diode D4 two ends, the output of isolating transformer T1 secondary side is after rectifier bridge D5 rectification, through filter capacitor C2 and storage capacitor Cout in parallel, then through output diode D3 output.IGBT gate drive signal is identical with base drive signal frequency, the duty ratio of auxiliary switch device Q, opens simultaneously or turn-offs.
It can circuit working principle be that when IGBT turn-offs, buffer capacitor C is recharged, capacitor C energy storage that RCD buffer circuit is got.When IGBT triggering and conducting, the auxiliary switch device Q conducting that is also triggered.At this moment, buffer capacitor C and C1 and transformer primary side inductance form CL resonant circuit, and electric energy is by transformer coupled to secondary side, and the loss of rectification circuit during by IGBT switch absorbs and be converted into electric energy.Because CL resonant circuit has less AC impedance, electric energy in buffer capacitor C is mainly changed to transformer by CL resonant circuit, electric current in buffer capacitor C does not discharge by IGBT substantially, has reduced rush of current and switching loss when IGBT opens, can realize zero current turning-on in theory.RCD buffer circuit is got and can in switching process, be got energy by circuit.Realized IGBT over commutation, direct voltage conversion simultaneously, electrical power storage has been got up.Get and can strengthen, to the upper large electric current of IGBT, superpotential buffer capacity, having lowered the switching loss of series IGBT by circuit simultaneously.As Fig. 3 gets the devices switch loss comparison diagram of energy circuit front and back for RCD buffer circuit is installed.
Static voltage sharing is got energy circuit diagram as shown in Figure 4, capacitor C 3 is connected in parallel at static voltage sharing Rs2 two ends, diode D6, D7 in the same way respectively with switching device SW1, after SW2 series connection, be connected in parallel on capacitor C 3 two ends, diode D6 anode, the negative electrode of D7 connects respectively the primary side of transformer T2, secondary side two outputs of transformer T2 respectively with diode D8, D9 anodic bonding, their negative electrode connects inductance L 1 one end, inductance L 1 other end output termination static resistance is got energy circuit output diode D2, between secondary side one end of transformer T2 and inductance L 1 other end output, connect capacitor C 4.
Static voltage sharing is got and can circuit working principle is, under quiescent conditions, gets and can from static resistance, obtain electric energy by circuit in static resistance, and its operation principle is identical with isolated DC translation circuit.When switching device is not also worked, RCD buffer circuit is got and can be can not get energy by circuit.When IGBT turn-offs always, static voltage sharing is got energy, and namely under starting state, the required electric energy of control circuit is got in having static resistance and can be provided by circuit.
RCD buffer circuit is got and can be passed through respectively output diode D2 separately by circuit with static getting by circuit, and D3 is in parallel.There is control circuit control to stop static state and get energy circuit working, to improve system effectiveness.
The present invention is converted into the available electric energy of conversion by the switching loss of IGBT, and can reduce significantly the switching loss in its course of work, alleviates electric current excessive in switching process and voltage build-up rate, improves the efficiency of convertor assembly.Originally get the electric energy that energy circuit is obtained, can directly provide electric energy for various control system and other equipment, simplified extra power supply and buffer circuit thereof.Particularly can provide electric energy for the dynamic voltage balancing control circuit of the large capacity IGBT that connects in direct current transportation valve section.
The active voltage control system that the present invention can be widely used in as series IGBT in high voltage direct current transmission, high-vol provides required electric energy, also electrical power storage can be got up supply with monitoring, sensor use simultaneously, improve non-maintaining property, reliability.Therefore the present invention has wide practical use.
Claims (4)
1. getting of controlling for series IGBT dynamic voltage balancing can circuit, it is characterized in that, comprise from the RCD buffer circuit in parallel with IGBT electric capacity get can RCD buffer circuit get can circuit, and from the static resistance in parallel with IGBT, get can static resistance get can circuit, RCD buffer circuit get can circuit and static resistance get and can through output diode, collect output respectively by circuit.
2. getting of controlling for series IGBT dynamic voltage balancing according to claim 1 can circuit, it is characterized in that, described RCD buffer circuit is got and can be formed by circuit:
After the first electric capacity, auxiliary switch device, fly-wheel diode series connection, be connected in parallel on the electric capacity two ends in the RCD buffer circuit of IGBT, wherein auxiliary switch device and fly-wheel diode differential concatenation, the first isolating transformer primary side is connected in parallel on fly-wheel diode two ends, the first isolating transformer secondary side output is after rectifier bridge rectification, through filter capacitor and storage capacitor in parallel, finally again through output diode output.
3. getting of controlling for series IGBT dynamic voltage balancing according to claim 2 can circuit, it is characterized in that, the base drive signal of described auxiliary switch device and IGBT gate drive signal frequency, duty ratio are identical, open simultaneously or turn-off.
4. getting of controlling for series IGBT dynamic voltage balancing according to claim 1 can circuit, it is characterized in that, described static resistance is got and can be formed by circuit:
The 3rd Capacitance parallel connection is at static voltage sharing two ends, two diodes are connected in parallel on the 3rd electric capacity two ends after connecting with two switching devices respectively, the negative electrode of one of them diode connects second transformer primary side one end, and the anode of another diode connects the primary side other end of the second transformer; The secondary side two ends of the second transformer connect through another two diode anodes respectively, their negative electrode all connects inductance one end, another termination static resistance of inductance is got energy circuit output diode, between secondary side one end of the second transformer and inductance other end output, connects the 4th electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410401656.4A CN104135141B (en) | 2014-08-15 | 2014-08-15 | Energy obtaining circuit for series-connected IGBT dynamic voltage balancing control |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410401656.4A CN104135141B (en) | 2014-08-15 | 2014-08-15 | Energy obtaining circuit for series-connected IGBT dynamic voltage balancing control |
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| CN104135141A true CN104135141A (en) | 2014-11-05 |
| CN104135141B CN104135141B (en) | 2017-05-03 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377942A (en) * | 2014-12-12 | 2015-02-25 | 中国电建集团中南勘测设计研究院有限公司 | High-voltage IGBT (insulated gate bipolar transistor) series conversion voltage-sharing circuit |
| CN105186864A (en) * | 2015-09-08 | 2015-12-23 | 国网智能电网研究院 | Self-energy-supply direct-current conversion circuit in press-packIGBT (Insulated Gate Bipolar Translator) serial application mode |
| CN105186903A (en) * | 2015-09-18 | 2015-12-23 | 国网智能电网研究院 | Two-level inverter energy-taking circuit and start control method thereof |
| CN105720822A (en) * | 2015-12-08 | 2016-06-29 | 国家电网公司 | Bidirectional DC/DC converter based on serial connection of SiC devices |
| CN107612311A (en) * | 2017-08-18 | 2018-01-19 | 全球能源互联网研究院 | A kind of IGBT tandem types power model and its electric power system and control method |
| CN108667441A (en) * | 2017-03-31 | 2018-10-16 | 通用电气公司 | Power semiconductor and its buffer circuit |
| CN110380598A (en) * | 2019-07-11 | 2019-10-25 | 清华大学 | Device pressure resistance improvement method and device based on mixing dynamic electric voltage balance |
| CN111293867A (en) * | 2020-01-19 | 2020-06-16 | 浙江省计量科学研究院 | Direct current output circuit of stack AC ripple |
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| DE10045093A1 (en) * | 2000-09-12 | 2002-03-28 | Siemens Ag | Circuit arrangement for energy supply for a control circuit of a power semiconductor switch and method for providing the control energy for a power semiconductor switch |
| JP2002281737A (en) * | 2001-03-21 | 2002-09-27 | Fuji Electric Co Ltd | Igbt series connection type gate drive circuit |
| CN1645733A (en) * | 2004-01-23 | 2005-07-27 | 惠普开发有限公司 | Alternating current switching circuit |
| CN101719727A (en) * | 2009-12-14 | 2010-06-02 | 北京理工大学 | dc-dc converter |
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2014
- 2014-08-15 CN CN201410401656.4A patent/CN104135141B/en not_active Expired - Fee Related
Patent Citations (4)
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| DE10045093A1 (en) * | 2000-09-12 | 2002-03-28 | Siemens Ag | Circuit arrangement for energy supply for a control circuit of a power semiconductor switch and method for providing the control energy for a power semiconductor switch |
| JP2002281737A (en) * | 2001-03-21 | 2002-09-27 | Fuji Electric Co Ltd | Igbt series connection type gate drive circuit |
| CN1645733A (en) * | 2004-01-23 | 2005-07-27 | 惠普开发有限公司 | Alternating current switching circuit |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377942A (en) * | 2014-12-12 | 2015-02-25 | 中国电建集团中南勘测设计研究院有限公司 | High-voltage IGBT (insulated gate bipolar transistor) series conversion voltage-sharing circuit |
| CN105186864A (en) * | 2015-09-08 | 2015-12-23 | 国网智能电网研究院 | Self-energy-supply direct-current conversion circuit in press-packIGBT (Insulated Gate Bipolar Translator) serial application mode |
| CN105186864B (en) * | 2015-09-08 | 2019-02-05 | 国网智能电网研究院 | A kind of self-energizing DC transfer circuit that crimp type IGBT connects under application model |
| CN105186903A (en) * | 2015-09-18 | 2015-12-23 | 国网智能电网研究院 | Two-level inverter energy-taking circuit and start control method thereof |
| CN105186903B (en) * | 2015-09-18 | 2019-09-06 | 国网智能电网研究院 | A kind of taking for two-level inverter can circuit and its starting control method |
| CN105720822A (en) * | 2015-12-08 | 2016-06-29 | 国家电网公司 | Bidirectional DC/DC converter based on serial connection of SiC devices |
| CN108667441A (en) * | 2017-03-31 | 2018-10-16 | 通用电气公司 | Power semiconductor and its buffer circuit |
| CN108667441B (en) * | 2017-03-31 | 2022-07-26 | 通用电气公司 | Power semiconductor device and buffer circuit thereof |
| CN107612311A (en) * | 2017-08-18 | 2018-01-19 | 全球能源互联网研究院 | A kind of IGBT tandem types power model and its electric power system and control method |
| CN110380598A (en) * | 2019-07-11 | 2019-10-25 | 清华大学 | Device pressure resistance improvement method and device based on mixing dynamic electric voltage balance |
| CN111293867A (en) * | 2020-01-19 | 2020-06-16 | 浙江省计量科学研究院 | Direct current output circuit of stack AC ripple |
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| CN104135141B (en) | 2017-05-03 |
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| CB03 | Change of inventor or designer information |
Inventor after: Yang Dirui Inventor after: Yang Wenhuan Inventor after: Wang Chaoli Inventor after: Zhao Dongyuan Inventor before: Yang Dirui Inventor before: Yang Wenhuan Inventor before: Wang Chaoli |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: YANG DIRUI YANG WENHUAN WANG CHAOLI TO: YANG DIRUI YANG WENHUAN WANG CHAOLI ZHAO DONGYUAN |
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Effective date of registration: 20171115 Address after: 200093 Shanghai military road, Yangpu District, No. 516 Co-patentee after: GLOBAL ENERGY INTERCONNECTION RESEARCH INSTITUTE Patentee after: University of Shanghai for Science and Technology Co-patentee after: State Grid Zhejiang Electric Power Company Address before: 200093 Shanghai military road, Yangpu District, No. 516 Patentee before: University of Shanghai for Science and Technology |
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Granted publication date: 20170503 Termination date: 20190815 |