CN104132740A - Self-powered digital thermometer - Google Patents
Self-powered digital thermometer Download PDFInfo
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- CN104132740A CN104132740A CN201410355217.4A CN201410355217A CN104132740A CN 104132740 A CN104132740 A CN 104132740A CN 201410355217 A CN201410355217 A CN 201410355217A CN 104132740 A CN104132740 A CN 104132740A
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Abstract
The invention provides a self-powered digital thermometer. The thermometer comprises a temperature sensing chip, an analog-digital conversion chip and an LED. The temperature sensing chip comprises a single crystal silicon semiconductor junction type component, a radioactive isotope source and an auxiliary component. The single crystal silicon semiconductor junction type component is a PN junction type component which is formed by sequentially arranging an N type layer and a P type layer. An i type layer is arranged between the N type layer and the P type layer to form a PiN junction type component. The radioactive source Ni-63 is loaded on the surface of the P type layer. The auxiliary component comprises an annular metal positive electrode, a metal negative electrode, a positive lead wire, a negative lead wire, an inner packaging layer and an outer packaging layer, wherein the annular metal positive electrode is manufactured on the surface of the P type layer, and the metal negative electrode is manufactured on the outer surface of the N type layer, wherein the whole surface is covered with the metal negative electrode. The positive lead wire is connected with the positive electrode and the analog-digital conversion chip, and the negative lead wire is connected with the negative electrode and the analog-digital conversion chip. The gaps between the radioactive source and the outer packaging layer as well as between the PN junction type component and the outer packaging layer are filled with the inner packaging layer, and the exterior is wrapped with the outer packaging layer. The positive lead wire and the negative lead wire penetrate through the inner packaging layer and the outer packaging layer and are connected with the analog-digital conversion module and the LED.
Description
Technical field
The invention belongs to temperature measuring equipment technical field, be specifically related to a kind of self-power digital thermometer.
Background technology
Temperature is the physical quantity that characterizes the cold and hot degree of object, and it is at the various aspects such as industry, agricultural, military affairs and scientific research very important underlying parameter all.Temperature is to be difficult to one of fundamental physical quantity of Measurement accuracy most, it can not can directly measure as the physical quantitys such as length, quality, time, but a lot of physical characteristicss of material all have substantial connection with temperature, as size, conductivity, thermoelectrical potential, radiation power and other a lot of intrinsic characteristics all change along with the difference of temperature, so can indirectly measure temperature by temperature variant some characteristic of material.Utilized at present these feature developments to go out some temperature sensors, comprise (the Du Huimin etc. such as thermopair, thermistor, platinum resistance (RTD) and integrated circuit (IC), adopt the digital thermometer design of integrated temperature sensor, Wuhan University of Technology's journal, 2010,32(6), P904).These temperature sensors respectively have feature, as thermocouple sensor has wide temperature range and is applicable to various atmospheres, but the very little difficult measurement of the non-linear relation of its physical characteristics and temperature variation and change value; Thermistor (temperature) sensor test rapid sensitive, but the linear relationship of its physical characteristics and temperature variation is very poor, in high thermal environment, can cause permanent damages; Platinum sensor measurement result accuracy can be stablized, and the linear relationship of its physical characteristics and temperature variation is better than thermopair and thermistor, but measuring speed is slower.Integrated circuit sensor is to utilize the temperature variant inherent inherent characteristic of semiconductor material performance, and the linear relationship of its physical characteristics and temperature variation is fine, but needs outer power supply source to embed in circuit.
Summary of the invention
The object of this invention is to provide a kind of self-power digital thermometer, semiconductor material (as monocrystalline silicon) is made into special junction device, loaded into transmit is containing the radioactive isotope of energy ray particle, can form the temperature sense chip of external output current, in conjunction with modulus conversion chip and LED, show, can make a kind of self-power digital thermometer.Utilize the temperature variant inherent inherent characteristic of semiconductor material performance, be made into and radioactive ray particle energy can be converted into the device of electric signal, loading can provide the radioactive isotope formation temperature induction chip of band energy ray particle, in conjunction with modulus conversion chip and LED, show, make a kind of novel self-power digital thermometer.
The technical solution adopted for the present invention to solve the technical problems is: self-power digital thermometer contains temperature sense chip, modulus conversion chip and LED and shows, wherein temperature sense chip comprises monocrystalline silicon semiconductor junction device, radioactive isotope power supply and accessory.Monocrystalline silicon semiconductor junction device is PN or the PiN junction device that utilizes single crystal silicon material to make, and radioactive isotope power supply is the Ni-63 radioactive source made from certain chemical physics form, and accessory comprises device electrode, lead-in wire and chip-packaging structure.Monocrystalline silicon semiconductor devices is PN junction type device, take phosphorus doping density as 1 * 10
13cm
-3～1 * 10
17cm
-3n type single crystal silicon sheet be substrate, at its surface diffusion boron, forming concentration is 1 * 10
16cm
-3～1 * 10
19cm
-3p type layer, form PN junction; Selectable scheme is that to take the intrinsic monocrystalline silicon piece of non-doping be substrate, and at surface thereof diffusion phosphorus, forming concentration is 1 * 10
13cm
-3～1 * 10
17cm
-3n-type layer, at its another surface diffusion boron, forming concentration is 1 * 10
16cm
-3～1 * 10
19cm
-3p type layer, form PiN knot.Radioactive isotope Ni-63 source loads on P(i) surface, N device p type island region.It is positive electrode that accessory is included in surface, device p type island region making circular metal electrode, through just going between, be connected to modulus conversion chip, the metal covering electrode of making covering whole N-type district on surface, device N-type district is negative electrode, through negative lead-in wire, is connected to modulus conversion chip; Interior encapsulated layer adopts radiation-resistant compound substance, by die perfusion method, waters in the space that is filled in (between radioactive source sheet and device) between each parts, plays fixing and radiation proof effect.Outer package layer is made of FeNi kovar alloy, plays and strengthens chip bulk strength and radiation proof effect.Positive and negative electrode lead-in wire is through interior outer package layer.Whole temperature sense chip is from the appearance cylindric with two contact conductors.Modulus conversion chip one side is connected with temperature sense chip through positive and negative electrode lead-in wire, and another side shows and is connected with LED.Modulus conversion chip and LED show the electric current power supply by the output of temperature sense chip.
The invention has the beneficial effects as follows: self-powered, long service life, can guarantee non-maintaining in many decades and without external world's power supply (energy), physical characteristics and temperature variation are related to good linearity, accurate to temperature sense, be applicable to as the long-life wireless digital thermometer that does not independently need extraneous power supply (energy).
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of self-power digital thermometer of the present invention;
In figure, the 1. interior encapsulated layer 11. of negative lead-in wire 3. negative electrode 4. N-type layer 5. i type layer 6. P type layer 7. positive electrode 8. modulus conversion chip 9. outer package layer 10. of LED 2. 12. radioactive sources that just going between.
Embodiment
Below in conjunction with accompanying drawing, content of the present invention is further illustrated.
Fig. 1 is the structural representation of a kind of self-power digital thermometer of the present invention, in specific embodiment, a kind of self-power digital thermometer consists of temperature sense chip, modulus conversion chip and LED demonstration, and wherein temperature sense chip comprises monocrystalline silicon semiconductor junction device, radioactive isotope power supply and accessory; Monocrystalline silicon semiconductor junction device is arranged successively and is formed PN junction type device by N-type layer 4, P type layer 6, and a selectable scheme is i type layer 5 to be set between N-type layer 4, P type layer 6 form PiN junction device; On P type layer 6 surface, be loaded with radioactive source 1; Accessory is included in the annular metal positive electrode 7 that P type layer 6 surface make, the metal negative electrode 3 on the whole surface of covering making at N-type layer 4 outside surface; Just going between 11 connection positive electrodes 7 and modulus conversion chip 8, negative lead-in wire 2 connects negative electrode 3 and modulus conversion chips 8; Interior encapsulated layer 10 is filled in the space of (between radioactive source 12 and P type layer 6) between above each parts (except modulus conversion chip 8), outside it, is coated by outer package layer 9 again; Just going between 11 and negative lead-in wire 2 through interior encapsulated layer 10 and outer package layer 9, is connected with LED1 with analog-to-digital conversion module 8, be that analog-to-digital conversion module 8 and LED1 power; Analog-to-digital conversion module 8 is converted to digital signal by the voltage analog signal of input, by LED1, is shown.
Radioactive ray particle containing energy enters semiconductor junction device material, because ionisation effect will produce a large amount of electron-hole pairs, these electron-hole pairs can be separated under the effect of junction device built in field, to in device the two poles of the earth access external circuit, will export DC signal, can be other electrical appliance power supply; The voltage of this electric signal and temperature have good line style inverse relation simultaneously.Utilize modulus conversion chip this voltage analog signal can be converted to digital signal and be shown by LED.Because this temperature sense chip self can output current, so (analog to digital conversion and LED) electric power supply of its rear end can provide by this chip, and whole thermometer is without externally fed (energy).
The principles of science of the technical solution used in the present invention institute foundation is: semiconductor material (as monocrystalline silicon) is made into special junction device, when the radioactive ray particle containing energy enters device material, because ionisation effect will produce a large amount of electron-hole pairs, these electron-hole pairs can be separated under the effect of junction device built in field, to in device the two poles of the earth access external circuit, will export DC signal, can be other electrical appliance power supply.Simultaneously a lot of important performance characteristic of semiconductor material as diffusion length, intrinsic carrier concentration etc. be all the function of temperature, can change along with the change of temperature, and the variation to temperature is very sensitive, and the variation of these performance parameters will directly have influence on the intensity of DC signal, especially the variation of its output voltage clearly.By modulus conversion chip, the simulating signal of this change in voltage can be converted to digital signal, and be shown by LED.Modulus conversion chip and LED show that the electric current of being exported by temperature sense chip provides electric energy.
The performance parameter of single-crystal semiconductor material and the relation of temperature are as follows:
Diffusion length L can be expressed as:
Wherein diffusion coefficient D can be by mobility [mu]
n,
pobtain with Einstein's relation.Different temperatures T and different levels of doping (N
d+ N
a) carrier mobility μ in semiconductor material under condition
n,
p:
Einstein relation:
In non high temperature situation, the variation of D is very little, so it is little on the impact of L.The temperature dependence of minority carrier life time τ is to be determined by monoenergetic level statistics, and the minority carrier life time in Ze n district and p district is respectively:
For monocrystalline silicon, its intrinsic carrier concentration n
ican be expressed as with the relation of temperature T:
By above funtcional relationship, can see, the performance parameter of these materials and the relation of temperature are very close.These parameters are directly related with the electric signal of output, and that wherein have the greatest impact is its open-circuit voltage V
oc, there is following relation:
Device reverse saturation current density J
0computing formula:
The relation of open-circuit voltage and reverse saturation current density:
According to above funtcional relationship, we have provided the graph of a relation of electric signal open-circuit voltage and temperature.
In the temperature range of our examination (230.15K～390.15K ,-43 ℃～117 ℃), open-circuit voltage presents obvious inverse relation and corresponding one by one with temperature.In fact, such pass ties up to low-temp. portion and divides especially applicablely, can expand to 203.15K(-70 ℃) even lower.By adjusting semiconductor device structure and radioisotopic heap(ed) capacity, this pass ties up in larger temperature range and all will be suitable for.
Radioactive isotope can spontaneous emission containing can ray particle.Wherein launch β ray particle and in semiconductor material, there is stronger ionisation effect, the easy conductively-closed of such ray particle simultaneously, in use environment and personnel do not damage to external world.If the radioactive isotope of the transmitting pure beta ray particle long half-lift of selection is (as Ni-63,100 years half life period), can guarantee very in long period, to continue to provide containing energy ray particle, such radioactive isotope provides reliable and long-life energy supply for semiconductor devices transforms electric signal.
Analysis based on above, we think in conjunction with long half-lift radioactive isotope and monocrystalline silicon semiconductor devices, can form the temperature sense chip of external output current, in conjunction with modulus conversion chip and LED, show, can make a kind of self-power digital thermometer.
Claims (1)
1. a self-power digital thermometer, is characterized in that: described thermometer is shown and formed by temperature sense chip, modulus conversion chip and LED; Wherein temperature sense chip comprises monocrystalline silicon semiconductor junction device, radioactive isotope power supply and accessory; Monocrystalline silicon semiconductor junction device is arranged successively and is formed PN junction type device by N-type layer (4), P type layer (6), and a selectable scheme is i type layer (5) to be set between N-type layer (4), P type layer (6) form PiN junction device; On P type layer (6) surface, be loaded with radioactive source (12); Accessory is included in the annular metal positive electrode (7) that P type layer (6) surface makes, the metal negative electrode (3) on the whole surface of covering making at N-type layer (4) outside surface; Just go between (11) connect positive electrode (7) and modulus conversion chip (8), negative lead-in wire (2) connection negative electrode (3) and modulus conversion chip (8); Interior encapsulated layer (10) is filled in the space between PiN junction device and radioactive source (12) and outer package layer (9); Just go between (11) and bear lead-in wire (2) through interior encapsulated layer (10) and outer package layer (9), with analog-to-digital conversion module (8) and LED(1) be connected, be analog-to-digital conversion module (8) and LED(1) power supply; Analog-to-digital conversion module (8) is converted to digital signal by the voltage analog signal of input, by LED(1) show.
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|---|---|---|---|
| CN201410355217.4A CN104132740B (en) | 2014-07-24 | 2014-07-24 | A kind of self-power digital thermometer |
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| CN201410355217.4A CN104132740B (en) | 2014-07-24 | 2014-07-24 | A kind of self-power digital thermometer |
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| CN104132740B CN104132740B (en) | 2016-08-17 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| US20120158349A1 (en) * | 2010-12-15 | 2012-06-21 | Sae Magnetics (H.K.) Ltd. | Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction |
| CN102969225A (en) * | 2011-08-31 | 2013-03-13 | 英飞凌科技股份有限公司 | Halbleiterbauelement mit einer amorphen halb-isolierenden schicht, temperatursensor und verfahren zur herstellung eines halbleiterbauelements |
| CN203011560U (en) * | 2012-12-27 | 2013-06-19 | 长安大学 | Silicon carbide temperature sensor |
-
2014
- 2014-07-24 CN CN201410355217.4A patent/CN104132740B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| US20120158349A1 (en) * | 2010-12-15 | 2012-06-21 | Sae Magnetics (H.K.) Ltd. | Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction |
| CN102969225A (en) * | 2011-08-31 | 2013-03-13 | 英飞凌科技股份有限公司 | Halbleiterbauelement mit einer amorphen halb-isolierenden schicht, temperatursensor und verfahren zur herstellung eines halbleiterbauelements |
| CN203011560U (en) * | 2012-12-27 | 2013-06-19 | 长安大学 | Silicon carbide temperature sensor |
Non-Patent Citations (1)
| Title |
|---|
| 罗顺忠 等: "《辐射伏特效应同位素电池研究进展》", 《同位素》 * |
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