CN104132740B - A kind of self-power digital thermometer - Google Patents
A kind of self-power digital thermometer Download PDFInfo
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- CN104132740B CN104132740B CN201410355217.4A CN201410355217A CN104132740B CN 104132740 B CN104132740 B CN 104132740B CN 201410355217 A CN201410355217 A CN 201410355217A CN 104132740 B CN104132740 B CN 104132740B
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Abstract
The invention provides a kind of self-power digital thermometer, described thermometer includes temperature sense chip, modulus conversion chip and LED；Wherein temperature sense chip includes single-crystal semiconductor junction device, radioactive isotope power supply and accessory；Single-crystal semiconductor junction device is arranged successively by N-type layer, P-type layer and is formed PN junction device, arranges i type layer and form PiN junction device between N-type layer, P-type layer.It is loaded with radioactive source Ni 63 on P-type layer surface；Accessory is included in the annular metal anelectrode that P-type layer surface makes, at the metal negative electrode covering whole surface that N-type layer outer surface makes；Connect anelectrode and the just lead-in wire of modulus conversion chip, connect negative electrode and the negative lead of modulus conversion chip；The interior encapsulated layer being filled in the space between radioactive source and PN junction device and outer package layer, and the outer package layer of outer cladding；Just going between and negative lead is through interior encapsulated layer and outer package layer, be connected with analog-to-digital conversion module and LED.
Description
Technical field
The invention belongs to temperature measuring equipment technical field, be specifically related to a kind of self-power digital thermometer.
Background technology
Temperature is the physical quantity characterizing the cold and hot degree of object, and it is in various aspects such as industry, agricultural, military affairs and scientific researches all
Very important underlying parameter.Temperature is to be most difficult to one of fundamental physical quantity of accurately measuring, it can not as length, quality, time
Between etc. physical quantity can directly measure like that, but a lot of physical characteristics of material all have substantial connection with temperature, such as size, conductance
Rate, thermoelectrical potential, radiant power and other a lot of intrinsic characteristics all change along with the difference of temperature, thus can by material with
Some characteristic of variations in temperature measures temperature indirectly.These feature developments have been utilized to go out some temperature sensors at present, bag
(Du Huimin etc. use integrated temperature sensor to include thermocouple, critesistor, platinum resistance (RTD) and integrated circuit (IC) etc.
Digital thermometer designs, Wuhan University of Technology's journal, and 2010,32(6), P904).These temperature sensors are respectively arranged with feature, such as heat
Thermocouple sensor has wide temperature range and is suitable for various atmospheres, but its physical characteristic and the non-linear relation of variations in temperature
And change value the least be difficult to measure；Thermistor (temperature) sensor test rapid sensitive, but its physical characteristic and the line of variations in temperature
Sexual relationship is very poor, can cause permanent damages in high thermal environment；Platinum sensor measurement result accuracy can be stable, and its physics is special
Property be better than thermocouple and critesistor with the linear relationship of variations in temperature, but measuring speed is slower.Integrated circuit sensor is
Utilize the linear relationship of the inherent inherent character that semiconductor material performance varies with temperature, its physical characteristic and variations in temperature very
Good, however it is necessary that in the necessary embedded circuit of outer power supply source.
Summary of the invention
It is an object of the invention to provide a kind of self-power digital thermometer, semi-conducting material (such as monocrystal silicon) is fabricated to spy
Different junction device, loads the radiosiotope launched containing energy ray particle, can form the temperature sense externally exporting electric current
Answer chip, show in conjunction with modulus conversion chip and LED, a kind of self-power digital thermometer can be made.Utilize semi-conducting material
The inherent inherent character that performance varies with temperature, is made into the device that radioactive ray particle energy can be converted into the signal of telecommunication
Part, loads and the radiosiotope of band energy ray particle can be provided to form temperature sense chip, in conjunction with modulus conversion chip and LED
Display, makes a kind of novel self-power digital thermometer.
The technical solution adopted for the present invention to solve the technical problems is: self-power digital thermometer contains temperature sense core
Sheet, modulus conversion chip and LED show, wherein temperature sense chip includes single-crystal semiconductor junction device, radioactivity coordination
Element source and accessory.Single-crystal semiconductor junction device is PN or the PiN junction device utilizing single crystal silicon material to make, radiation
Property isotopic source be the Ni-63 radioactive isotope power supply made with certain Chemical Physics form, accessory include device electricity
Pole, lead-in wire and chip-packaging structure.Single-crystal semiconductor device is PN junction device, with phosphorus doping density for 1 × 1013 cm-3～1 × 1017 cm-3N type single crystal silicon sheet be substrate, its diffusion into the surface boron formed concentration be 1 × 1016 cm-3～1 × 1019
cm-3P-type layer, constitute PN junction；Scheme is with the intrinsic monocrystalline silicon piece of undoped as substrate, is formed dense at surface thereof diffusion phosphorus
Degree is 1 × 1013 cm-3～1 × 1017 cm-3N-type layer, its another diffusion into the surface boron formed concentration be 1 × 1016 cm-3～1
×1019 cm-3P-type layer, constitute PiN knot.Radiosiotope Ni-63 source loads on P(i) surface, N device p type island region.Auxiliary
Parts are included in surface, device p type island region and make circular metal electrode is anelectrode, is connected to modulus conversion chip through just going between,
It is negative electrode that device N-type region surface makes the metal covering electrode of the whole N-type region of covering, is connected to analog digital conversion core through negative lead
Sheet；Interior encapsulated layer uses radiation-resistant composite, is watered between the components (except radiosiotope by die perfusion method
Between source sheet and device) space in, play fixing and radiation proof effect.Outer package layer FeNi kovar alloy makes,
Play enhancing chip bulk strength and radiation proof effect.Positive and negative electrode goes between through interior outer package layer.Whole temperature sense
Chip is from the appearance cylindric with two contact conductors.Modulus conversion chip one side is through positive and negative electrode lead-in wire and temperature
Induction chip connects, and another side shows with LED and is connected.Modulus conversion chip and LED show by the output of temperature sense chip
Electric current is powered.
The invention has the beneficial effects as follows: self-powered, service life is long, it is ensured that in many decades non-maintaining and without the external world supply
Electricity (energy), physical characteristic and variations in temperature relation good linearity, accurate to temperature sense, it is adaptable to need not the external world as independent
The long-life wireless digital thermometer of power supply (energy).
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention a kind of self-power digital thermometer；
In figure, 1. LED 2. negative lead 3. negative electrode 4. N-type layer 5. i type layer 6. P-type layer 7.
In anelectrode 8. modulus conversion chip 9. outer package layer 10., encapsulated layer 11. is just going between 12. radioactivity together
Element source, position.
Detailed description of the invention
Below in conjunction with the accompanying drawings present disclosure is further illustrated.
Fig. 1 is the structural representation of the present invention a kind of self-power digital thermometer, in the particular embodiment, and a kind of confession
Electricity digital thermometer is shown by temperature sense chip, modulus conversion chip 8 and LED and constitutes, and wherein temperature sense chip includes list
Crystal silicon semiconductor junction device, radioactive isotope power supply and accessory；Single-crystal semiconductor junction device is by N-type layer 4, p-type
Layer 6 arrangement successively forms PN junction device, and scheme is to arrange i type layer 5 between N-type layer 4, P-type layer 6 to form PiN junction device；
It is loaded with radioactive isotope power supply 1 on P-type layer 6 surface；Accessory is included in the annular metal positive electricity that P-type layer 6 surface makes
Pole 7, at the metal negative electrode 3 covering whole surface that N-type layer 4 outer surface makes；Just going between 11 connection anelectrodes 7 and modulus is turning
Changing chip 8, negative lead 2 connects negative electrode 3 and modulus conversion chip 8；Interior encapsulated layer 10 is filled in above each parts (except modulus turns
Change chip 8) between (except between radioactive isotope power supply 12 and P-type layer 6) space in, it is outer is coated with by outer package layer 9 again；Just
Lead-in wire 11 and negative lead 2, through interior encapsulated layer 10 and outer package layer 9, are connected with modulus conversion chip 8 and LED1, for analog digital conversion
Chip 8 and LED1 is powered；The voltage analog signal of input is converted to digital signal by modulus conversion chip 8, LED1 show.
Radioactive ray particle containing energy enters semiconductor junction device material, owing to ionisation effect will produce a large amount of electric
Son-hole pair, these electron-hole pairs can separate under junction device built in field effect, and device the two poles of the earth are accessed external circuit
In will export DC signal, can be that other electrical appliance is powered；The voltage of this signal of telecommunication and temperature have good line simultaneously
Type inverse relation.Utilize modulus conversion chip this voltage analog signal can be converted to digital signal and shown by LED.Due to
This temperature sense chip self can export electric current, and therefore (analog digital conversion and LED) electric energy supply of its rear end can be by this chip
Thering is provided, the most whole thermometer is without externally fed (energy).
The principles of science of the technical solution used in the present invention institute foundation is: semi-conducting material (such as monocrystal silicon) is fabricated to spy
Different junction device, when the radioactive ray particle containing energy enters device material, owing to ionisation effect will produce a large amount of electronics-sky
Cave pair, these electron-hole pairs can separate under junction device built in field effect, and being accessed at device the two poles of the earth will in external circuit
Output DC signal, can be that other electrical appliance is powered.Simultaneously semi-conducting material a lot of important performance characteristic such as diffusion length,
Intrinsic carrier concentrations etc. are all the functions of temperature, can change along with the change of temperature, and the change to temperature is very sensitive, and
The change of these performance parameters will directly influence the change of the intensity of DC signal, especially its output voltage clearly.
The analogue signal of this change in voltage can be converted to digital signal by modulus conversion chip, and be shown by LED.Modulus turns
Change chip and LED shows, temperature sense chip the electric current exported provides electric energy.
The performance parameter of single-crystal semiconductor material is as follows with the relation of temperature:
Diffusion length L can be expressed as:
Wherein diffusion coefficient D can be by mobility [mu]n, pObtain with Einstein's relation.Different temperatures T and difference are mixed
Miscellaneous concentration (ND+ NACarrier mobility μ in semi-conducting material under the conditions of)n, p:
Einstein relation:
In the case of non high temperature, D's varies less, so it is little on the impact of L.The temperature-independent of minority carrier life time τ
Relation is determined by monoenergetic level statistics, then the minority carrier life time in n district and p district is respectively as follows:
For monocrystal silicon, its intrinsic carrier concentration niCan be expressed as with the relation of temperature T:
By above functional relationship it will be seen that the performance parameter of these materials and the relation of temperature are the closest.These
Parameter is directly related with the signal of telecommunication of output, and that wherein impact is maximum is its open-circuit voltage Voc, there is following relation:
Device reverse saturation current density J0Computing formula:
Open-circuit voltage and the relation of reverse saturation current density:
According to above functional relationship, we illustrate the graph of a relation of signal of telecommunication open-circuit voltage and temperature.
Within the temperature range of we examine or check (230.15K～390.15K, i.e.-43 DEG C～117 DEG C), open-circuit voltage and temperature
Degree presents obvious inverse relation and one_to_one corresponding.Divide especially suitable it is true that such pass ties up to low-temp. portion, can extend
To 203.15K(-70 DEG C) even lower.By adjusting semiconductor device structure and radioisotopic loading capacity, this pass
Within the scope of tying up to bigger temperature all will be suitable for.
Radiosiotope can be with the spontaneous emission ray particle containing energy.Wherein launch β ray particle at semi-conducting material
In there is stronger ionisation effect, such ray particle is easily shielded simultaneously, in use will not to external world environment and
Personnel damage.If the radiosiotope launching pure beta ray particle long half-lift of selection is (such as Ni-63, half-life 100
Year), it is ensured that persistently providing in long period containing energy ray particle very much, such radiosiotope is that semiconductor device converts
The signal of telecommunication provides reliable and long-life energy supply.
Based on above analysis, it is believed that combine long half-life radioisotopes isotope and single-crystal semiconductor device, can
To form the temperature sense chip externally exporting electric current, show in conjunction with modulus conversion chip and LED, a kind of self-powered can be made
Digital thermometer.
Claims (1)
1. a self-power digital thermometer, it is characterised in that: described thermometer is by temperature sense chip, modulus conversion chip
(8) constitute with LED display；Wherein temperature sense chip includes single-crystal semiconductor junction device, radioactive isotope power supply (12)
And accessory；Single-crystal semiconductor junction device is arranged successively by N-type layer (4), P-type layer (6) and is formed PN junction device, scheme
It is between N-type layer (4), P-type layer (6), to arrange i type layer (5) form PiN junction device；It is loaded with radiation on P-type layer (6) surface
Property isotopic source (12)；Accessory is included in the annular metal anelectrode (7) that P-type layer (6) surface makes, in N-type layer (4) outward
The metal negative electrode (3) covering whole surface that surface makes；Just go between (11) connection anelectrode (7) and modulus conversion chip
(8), negative lead (2) connects negative electrode (3) and modulus conversion chip (8)；Interior encapsulated layer (10) is filled in PiN junction device and puts
In space between injectivity isotope source (12) and outer package layer (9)；Just go between (11) and negative lead (2) is through interior encapsulated layer
And outer package layer (9) (10), with modulus conversion chip (8) and LED(1) it is connected, for modulus conversion chip (8) and LED(1) supplies
Electricity, modulus conversion chip (8) one side is connected with temperature sense chip through positive and negative electrode lead-in wire, another side and LED(1) display is even
Connect；The voltage analog signal of input is converted to digital signal, by LED(1 by modulus conversion chip (8)) display.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410355217.4A CN104132740B (en) | 2014-07-24 | 2014-07-24 | A kind of self-power digital thermometer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410355217.4A CN104132740B (en) | 2014-07-24 | 2014-07-24 | A kind of self-power digital thermometer |
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| Publication Number | Publication Date |
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| CN104132740A CN104132740A (en) | 2014-11-05 |
| CN104132740B true CN104132740B (en) | 2016-08-17 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006242894A (en) * | 2005-03-07 | 2006-09-14 | Ricoh Co Ltd | Temperature-sensing circuit |
| CN102564637B (en) * | 2010-12-15 | 2015-09-09 | 新科实业有限公司 | The measuring method of the intensification that bias current/bias voltage causes in magnetic tunnel-junction |
| US8710615B2 (en) * | 2011-08-31 | 2014-04-29 | Infineon Technologies Ag | Semiconductor device with an amorphous semi-insulating layer, temperature sensor, and method of manufacturing a semiconductor device |
| CN203011560U (en) * | 2012-12-27 | 2013-06-19 | 长安大学 | Silicon carbide temperature sensor |
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