CN104131259A - Metal ion source and vacuum coating system - Google Patents
Metal ion source and vacuum coating system Download PDFInfo
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- CN104131259A CN104131259A CN201410268732.9A CN201410268732A CN104131259A CN 104131259 A CN104131259 A CN 104131259A CN 201410268732 A CN201410268732 A CN 201410268732A CN 104131259 A CN104131259 A CN 104131259A
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Abstract
The invention discloses a metal ion source and a vacuum coating system. In the metal ion source, a magnetic-control target is designed into a cylinder shape and is mounted in an outer shell of the cylinder; magnetic components and a cooling system are correspondingly mounted in the outer shell, and a leading-out gate is used for leading out an ion beam flow. In the metal ion source, magnetic-control discharge is relatively closed in the cylinder; when in work, the leading-out gate is used for leading out the ion beam flow, 100% of the ion beam flow can be led out, and the beam flow does not contain 'metal droplets'; at the same time, the target surface area is far greater than the led-out beam flow area, and the led-out beam flow density is greatly improved, so that the vacuum coating system has the superiorities of no need of a filter device, fast deposition or large-dose injection, and can be used for fast routine 'beam linear' thin film deposition or large-dose high-energy ion injection.
Description
Technical field
The application relates to ion film plating field, particularly relates to a kind of metal ion source and vacuum coating system.
Background technology
The exploitation early start of metal ion source is in nineteen eighty-two, the I.G.Brown of Berkeley Lorenz National Laboratory of the U.S. has designed metal steam arcing ion source first, be commonly called as MeVVA source, injection and thin film deposition work (BrownIG.Metalvaporvacuumarcionsource.Rev.Sci.Instrum. based on metal ion are started, 1986,57 (6): 1069-1084).Subsequently, metal ion injects with deposition technique and is widely used in the industrial engineering fields such as instrument, mould, mechanical protection, semi-conductor, thin-film solar cells, lithium cell, and in the daily life such as mobile phone, wrist-watch, illumination, embody huge marketable value.
But, MeVVA source structure relative complex, and it is developed based on vacuum arc discharge principle, be subject to the restriction of cooling conditions and target structure, its discharge pulse is shorter, and the output dose in the unit time is limited, efficiency is lower, is just used at first in the injection and doping of the materials such as semi-conductor.Afterwards researchist again the principle based on cathode arc developed pulsed cathode arc metal ion source, and the application extension of metal ion is arrived to conventional thin film deposition field, but the arc heat that cathode arc produces, in the metal ion line that makes to produce, contain a large amount of " molten drop ", splash out damages the film of deposition.At this moment, US Patent No. 5279723 discloses a kind of pulsed cathode arc metal ion source that adds magnetic filtering system, for filtering by electric arc thermogenetic " molten drop ", but strainer tube causes again sedimentation effect greatly to reduce, and " drop " and efficiency form a pair of implacable contradiction.Also there is afterwards the metal ion source of some software engineering researchers invent based on evaporation coating and magnetron sputtering electric discharge, be disclosed in patent CN1030777C, due to the atoms metal that is of conventional evaporation coating and magnetron sputtering technique acquisition, so need to increase extra ionization device, although can realize the ionization of certain atom, but efficiency is not high, additional device also can form " shade influence " etc. in coating process simultaneously.
The people such as V.Kouznetsov in 1999 have proposed high-power impulse magnetron sputtering technology, and apply for a patent US6296742B1, wherein, adopt higher peak power that the ionization level of magnetron sputtering technique is improved, can reach 60%-90% according to different target material ionization levels, and not containing " molten drop ", be therefore considered to the hope of modern PVD coating technique in the particle beam of this high ionization level.Simultaneously, this technology is also for the exploitation of metal ion source provides opportunity, before present inventor, also once in patent CN101838795, proposed the high-power impulse magnetron sputtering ion implantation and deposition technology based on planar target, the metal ion of the high ionization level that this technology is produced is for ion implantation and deposition.Simultaneously, the people such as A.Anders also the high-power impulse magnetron sputtering technological development based on planar target corresponding metal ion source (OksE, AndersA.Aself-sputteringionsource:Anewapproachtoquiescen tmetalionbeams[J] .Rev.Sci.Instrum., 2010,81 (2): 02B306-303).But high-power impulse magnetron sputtering is operated in the anomalous glow discharge stage that approaches arc-over, discharge very unstable, " beat arc " once in a while and also can cause the splash of " molten drop ".Secondly, for different target materials, its deposited particles ionization level differs greatly, and is difficult to obtain the line of 100% ionization.In addition, because target voltage current potential is lower, the sputter material ion after ionization is sucked back into again target material surface under electric field action, causes lower sedimentation rate, and obvious this ion source also exists the obstacle of commercial application.
Summary of the invention
The application's object is to provide a kind of metal ion source of texture improvement and the vacuum coating system based on this metal ion source.
To achieve these goals, the application has adopted following technical scheme:
The application discloses a kind of metal ion source, comprises drawing grid and drawing electric field positive pole of shell, several magneticss, copper sheathing, magnetic controlling target, blow-out cover, cooling system, magnet steel, mesh; Shell is the cylindrical tube shape of hollow; Magnet steel, cooling system, copper sheathing and magnetic controlling target be stacked being layed in shell sequentially, and not with shell conducting; Magnetic controlling target is embedded in copper sheathing, and several magneticss are embedded on magnet steel uniformly; Blow-out cover is fixed on the two ends of cylindrical drum shell, and the two ends of sequentially stacked setting magnet steel, cooling system, copper sheathing and magnetic controlling target are in the enclosure wrapped, and between blow-out cover and magnetics, copper sheathing, magnetic controlling target and magnet steel, leaves gap, is not all communicated with; Draw grid and be fixed on one end of cylindrical tube shape shell, draw electric field positive pole and be fixed on the other end of cylindrical tube shape shell, draw grid and draw electric field positive pole and all adopt insulating material to be fixedly connected with shell.
It should be noted that, wherein draw grid and be the negative pole of drawing power supply for connecting, so that ion beam current is drawn, be designed to mesh and draw grid, be to be convenient in use, ion beam current faces on the workpiece of drawing grid by drawing grid arrival, realizes deposition plating.When use, magnetic controlling target connects magnetron sputtering power supply, drawing grid connects and draws power supply, because magnetic controlling target is that design is cylindraceous, be placed in shell cylindraceous, in the cavity that whole sputter procedure all surrounds at magnetic controlling target, carry out, only have the particle of ionization could be drawn grid and draw arrival workpiece, therefore can obtain the line of 100% ionization; Meanwhile, even if there is once in a while " beating arc ", be also in cylindrical drum inside, " molten drop " can splash yet to workpiece; In addition, the line of drawing has left the target voltage sheath layer of magnetic controlling target, can not adsorbed go back to magnetic controlling target surface again, thereby improve beam current density.
Also it should be noted that, wherein magnet steel is one end connection of several magneticss to be realized to magnet short-cut path use; The number of magnetics, by needed magneticstrength and the decision that distributes, is not specifically limited at this.In a kind of implementation of the application, cooling system is preferably circulating water cooling system, for lowering the temperature to magnetic controlling target.Magnetic controlling target and the conducting of copper sheathing one, with shell or the conducting of blow-out cover.In the application, conducting refers to conductive communication, is conductive communication state while energising.Blow-out cover is arranged on shell, between the two can conducting, and also can not conducting, between itself and magnetics, copper sheathing, magnetic controlling target and magnet steel, leave space, all not conductings, and magnet steel and not conducting of shell, between magnet steel and shell, leave space, both adopt the screw of insulation to fix; And, between magnetics, cooling system and shell, be all disconnected, do not contact between the two.
Preferably, the application's metal ion source also comprises Faraday cup, and Faraday cup, after drawing grid, is fixedly connected with shell.It should be noted that, draw grid for ion beam current is drawn, the ion beam current of drawing arrives workpiece surface by drawing grid, and Faraday cup is amount for measuring the ion beam current of drawing, and to realize, to draw ion beam current controlled; Be appreciated that the measurement that will realize Faraday cup, also must connect an oscilloscope, for the intensity of drawing ion beam current of display measurement, oscilloscope can option and installment, does not do in this application concrete restriction.
Preferably, draw electric field positive pole by the port closed of the cylindrical tube shape shell being attached thereto.
Preferably, draw anodal any one preparation adopting in stainless steel, Cu, Al, V, Ti, Cr, Mn, Ni, Zn, Zr, Nb, Mo, Pd, Ag, Ta, W, Pt, Au and conduction and non-magnetic alloy of electric field.
Preferably, the grid (18) of drawing of mesh are to adopt the reticulated structure of metal wire knitted or the sheet metal structure of porous, and wire or tinsel adopt any one preparation in stainless steel, Cu, Al, V, Ti, Cr, Mn, Ni, Zn, Zr, Nb, Mo, Pd, Ag, Ta, W, Pt, Au and conduction and non-magnetic alloy.
The distance of preferably, drawing between the magnetic controlling target in grid and cylindrical tube shape shell is 2-20cm.
On the basis of metal ion source of application, the application's another side discloses a kind of vacuum coating system, comprise the application metal ion source, vacuum chamber, draw power supply, high-power impulse magnetron sputtering power supply and place the worktable of pending workpiece; Vacuum chamber is enclosed cavity, and metal ion source and worktable are fixed in vacuum chamber, and worktable is relative with one end that grid are drawn in the installation of metal ion source, is positioned at its right opposite; Draw power supply and high-power impulse magnetron sputtering power supply is arranged at outside vacuum chamber, draw the negative pole of power supply and the grid of drawing of metal ion source are electrically connected, anodal and metal ion source draw that electric field is anodal be electrically connected, or anodal with draw electric field positive pole and be electrically connected the rear ground connection that is total to; The negative pole of high-power impulse magnetron sputtering power supply is electrically connected with the copper sheathing of metal ion source and magnetic controlling target, plus earth.
It should be noted that, after the drawing that electric field is anodal and be electrically connected of the positive pole of wherein drawing power supply and metal ion source, drawing electric field positive pole can ground connection, also can be earth-free; It is earth-free that can to avoid high-power impulse magnetron sputtering when electric discharge electronics to arrive fast electric discharge anodal and disappear.Worktable is relative with one end that grid are drawn in the installation of metal ion source, be because, the one end of drawing grid is the one end of drawing ion beam current, worktable is positioned at its right opposite so that workpiece plated film.
One or more in the high power pulsed source of the compound high power pulsed source of high power pulsed source, pulse and direct current that preferably, high-power impulse magnetron sputtering power supply is single pulse mode, modulation.
Preferably, drawing power supply is the low-voltage power supply for the output voltage 50V～10kV of conventional thin film deposition, or is the high-voltage pulse power source for the output voltage 1kV～100kV of Plasma ion implantation; Wherein, low-voltage power supply is selected from direct supply, the pulse power, or one or more of DC pulse composite power source.
Preferably, the distance between metal ion source and worktable is 5～50cm.
Owing to adopting above technical scheme, the application's beneficial effect is:
The application's metal ion source, magnetic controlling target is designed to cylindrical tube shape, be arranged in cylindrical tube shape shell, when work, ion is sputter in the cavity surrounding in cylindrical tube shape target source, then utilizes and draws grid ion beam current is drawn, and the not charged atom not ionizing in other words can not be drawn, therefore, can realize 100% ion beam current.In addition, because sputter is to carry out in cylinder, even if there is " beating arc " also just in cylinder interior, " molten drop " can not draw with educt beaming flow.In addition, the application's metal ion source employing is drawn grid and is drawn target source ion, and the ion of drawing is subject to target voltage to attract to weaken, and meanwhile, the application's educt beaming flow area is far smaller than target surface area, and therefore, educt beaming flow density improves greatly.
Brief description of the drawings
Fig. 1: the internal structure schematic diagram that is metal ion source in the embodiment of the present application;
Fig. 2: the sectional view that is A-B direction in Fig. 1;
Fig. 3: the structural representation that is vacuum coating system in the embodiment of the present application.
Embodiment
In existing high-power impulse magnetron sputtering technology, the plane magnetic controlled sputtering target source that its metal ion source directly follows conventional lines, or existing cylindrical magnetic control sputtering target source, its electric discharge and sputter are all directly in the face of workpiece carries out.This metal ion source is in the time carrying out high-power impulse magnetron sputtering, as said above, there are at least three problems, first, this technical work is in the anomalous glow discharge stage that approaches arc-over, be easy to be transitioned into arc-over and produce " beating arc ", " molten drop " of formation affects coating quality; The second, because the magnetic controlling target of metal ion source is directly facing to workpiece, the particle such as neutral target atom or molecule sputtering all can Direct precipitation to workpiece surface, therefore, be difficult to acquisition 100% ion beam current; The 3rd, because magnetic controlling target is directly workpiece to be carried out to sputter coating, in fact the target surface area of magnetic controlling target is exactly educt beaming flow area or suitable with educt beaming flow area, and, because target voltage current potential is lower, target ion after ionization is sucked back into again magnetic controlling target surface under electric field action, causes sedimentation rate lower.The application's metal ion source, magnetic controlling target is designed to cylindric, when work, in the cavity surrounding at magnetic controlling target, to carry out sputter, and, utilization is drawn grid and is drawn ionic fluid, first, ensure 100% ion beam current, second, " beating arc " is also the inside in cylindrical drum, can in line, not carry secretly " molten drop ", the 3rd, the surface-area of cylindrical drum inwall is much larger than the bottom end opening area of cylindrical drum, the target surface area of the magnetic controlling target of laying is much larger than educt beaming flow area, therefore, improve beam current density, simultaneously, employing is drawn after electric field draws, ion has left target voltage sheath layer, be subject to target voltage to attract to weaken, can more deposit to workpiece surface, thereby further improve educt beaming flow density.
Visible, the application's crucial invention thinking is, the magnetic controlling target of metal ion source is designed to cylindric, be that magnetic controlling target is arranged in the shell of cylindrical tube shape, by magnetic charging relative closure in cylindrical drum, make educt beaming flow direction and sputter direction not in same direction, thereby ensured the quality of educt beaming flow, that has also avoided existing in direct sputter plays the detrimentally affect to film quality such as arc.On the basis of the application's metal ion source, the application provides a vacuum coating system, in this system, except the application's metal ion source, also comprises vacuum chamber, magnetron sputtering power supply, draws power supply, worktable etc.; Be appreciated that except the application's metal ion source, other assembly can, with reference to existing high-power impulse magnetron sputtering technology, not tire out and state at this.Just, in the application's preferred version, in order to reach good coating effects, to magnetron sputtering power supply, draw power supply and limit respectively, this will introduce in the following embodiments in detail.In addition,, in magnetron sputtering target source, the Distribution of Magnetic Field of cylindrical drum inside and magneticstrength are also the factors that affects magnetron sputtering; Be appreciated that, magnetics distribution and quantity all affect homogeneity and the size of the transverse magnetic field on target surface, emphasis in the application is the even transverse magnetic field that target internal surface exists some strength, and therefore, the number to magnetics and distribution specifically do not limit.
Below by specific embodiment, the application is described in further detail.Following examples are only further described the application, should not be construed as the restriction to the application.
Embodiment
The metal ion source that this is routine, as shown in Figure 1, comprises drawing grid 18 and drawing electric field positive pole 19 of shell 11, magnetics 12, copper sheathing 13, magnetic controlling target 14, blow-out cover 15, cooling system 16, magnet steel 17, mesh; Shell 11 is the cylindrical tube shape of hollow; Magnet steel 17, cooling system 16, copper sheathing 13 and magnetic controlling target 14 be stacked being layed in shell 11 sequentially, and not with shell 11 conductings; Magnetic controlling target 14 is embedded in copper sheathing 13, and magnetics 12 is embedded on magnet steel 17 uniformly; Blow-out cover 15 is fixed on the two ends of cylindrical drum shell, and stacked two ends that are arranged on magnet steel 17, cooling system 16, copper sheathing 13 and magnetic controlling target 14 in shell 11 are sequentially wrapped, between blow-out cover 15 and magnetics 12, copper sheathing 13, magnetic controlling target 14 and magnet steel 17, leave gap, all not conductings; Draw grid 18 and be fixed on one end of cylindrical tube shape shell 11, draw electric field positive pole 19 and be fixed on the other end of cylindrical tube shape shell 11, draw grid 18 and draw electric field positive pole 19 and all adopt insulating material to be fixedly connected with shell 11; Draw electric field positive pole 19 by the port closed of the cylindrical tube shape shell 11 being attached thereto.In this example, magnetics adopts magnet, specifically adopts eight blocks of magnet to be embedded in uniformly in magnet steel 17, magnet is evenly arranged in cylindrical tube shape shell, magnet is arranged between magnet steel 17 and cooling system 16, and cooling system 16 is that magnet is wrapped up wherein, as shown in Figure 2.This routine cooling system is hydrologic cycle cooling system.In this example, although magnet steel 17, cooling system 16, copper sheathing 13 and magnetic controlling target 14 are sequentially stacked layings, in fact, magnet steel 17 separates with shell 11, leaves space in the middle of both, adopts and fixes with the screw of insulation covering; Magnetics 12, cooling system 16 are fixedly connected with copper sheathing 13; Magnetic controlling target 14 is embedded in the entirety of a conducting of the interior formation of copper sheathing 13, without insulation; The effect of blow-out cover 15 is that the magnetic charging of generation is limited in the cavity that magnetic controlling target surrounds, and avoids the conductive region electric discharge except magnetic controlling target target surface.
When use, ion beam current is drawn to power supply and be electrically connected with drawing grid 18, magnetron sputtering power supply is electrically connected with magnetic controlling target 14; In the cavity that whole sputter procedure surrounds at magnetic controlling target 14, complete, draw grid 18 ion beam current is drawn, ion beam current, through the cancellated grid 18 of drawing, reaches workpiece surface deposition plating.
In a kind of preferred version of this example, in order to realize the controlled of ion beam current, also in the outlet of ion beam current, Faraday cup 110 has been installed, Faraday cup 110, after drawing grid 18, is fixedly connected with shell 11.When use, in order to show intuitively ion beam current intensity, also prepare an oscilloscope and be connected with Faraday cup 110, for showing the intensity of ion beam current, to ion beam current is detected, regulated and controled.
In this example, draw electric field positive pole 19, draw grid 18, shell 11, blow-out cover 15, and the worktable 5 of mentioning is below all to adopt electro-conductive material preparation, preferably adopts stainless material.Be appreciated that except stainless steel, other electro-conductive material, as Cu, Al, V, Ti, Cr, Mn, Ni, Zn, Zr, Nb, Mo, Pd, Ag, Ta, W, Pt, Au and conduction thereof and non-magnetic alloy may be used to this example.Wherein, the grid 18 of drawing of mesh specifically adopt metal wire knitted to reticulate the sheet metal structure of structure or porous.In addition,, in order effectively ion beam current to be drawn, the distance of drawing between the magnetic controlling target 14 in grid 18 and cylindrical tube shape shell is 2-20cm.
On the basis of above metal ion source, this example further provides a kind of vacuum coating system, as shown in Figure 3, comprise this routine metal ion source 1, vacuum chamber 2, draw power supply 3, high-power impulse magnetron sputtering power supply 4 and place the worktable 5 of pending workpiece; Vacuum chamber 2 is enclosed cavity, and metal ion source 1 and worktable 5 are fixed in vacuum chamber 2, and worktable 5 is relative with one end that grid 18 are drawn in metal ion source 1 installation, is positioned at its right opposite, and concrete, in this example, worktable 5 is positioned under metal ion source 1; Draw power supply 3 and high-power impulse magnetron sputtering power supply 4 is arranged at outside vacuum chamber 2, draw the negative pole of power supply 3 and the grid 18 of drawing of metal ion source 1 are electrically connected, the electric field anodal 19 of drawing of anodal and metal ion source 1 be electrically connected and is total to afterwards ground connection; The negative pole of high-power impulse magnetron sputtering power supply 4 is electrically connected with copper sheathing 13 and the magnetic controlling target 14 of metal ion source 1, plus earth.
High-power impulse magnetron sputtering power supply 4 in this example can adopt in the high power pulsed source of the compound high power pulsed source of high power pulsed source, pulse and the direct current of single pulse mode, modulation any one or be used in combination.Drawing power supply 3 can be the low-voltage power supply for the output voltage 50V～10kV of conventional thin film deposition, optionally from direct supply, the pulse power, or DC pulse composite power source a kind of or be used in combination.Or, draw power supply 3 and also can adopt the high-voltage pulse power source for the output voltage 1kV～100kV of Plasma ion implantation.In this routine vacuum coating system, the distance between metal ion source 1 and worktable 5 is designed to 5～50cm all can meet user demand.
When use, first coated element is placed on the worktable 5 of vacuum coating system, vacuum chamber 2 vacuumizes, until vacuum tightness is less than 10
-2when Pa, pass into working gas to 1Pa, then open and draw power supply 3 and high-power impulse magnetron sputtering power supply 4, carry out ion film plating.Wherein, the air pressure of working gas can require to adjust according to actual plated film, and the operating air pressure of this routine apparatus for ionically plating all can at 0.01Pa～10Pa.In this example, the crest voltage of high-power impulse magnetron sputtering power supply 4 is 400V～2500V, and pulsewidth is 0 μ s～1000 μ s, 0Hz～1000Hz.Specifically, can be according to practical situation adjustment.In addition, this example draw power supply also when the pulse power, its pulse can with the pulse synchronization of magnetron sputtering, also can be asynchronous, when both are synchronous, be more conducive to drawing of ion beam current.In addition, the working gas in this example is Ar rare gas element; Be appreciated that the current conventional working gas using, comprise that rare gas element and reactant gas may be used to this routine apparatus for ionically plating, wherein rare gas element comprises any one or its combination in He, Ne, Ar, Kr, and reactant gas comprises O
2, N
2, CH
4, C
2h
2, H
2s, SiH
4, BH
3, any one or its combination in HF, HCl, HBr.
The metal ion source that this is routine, is creationaryly designed to cylindrical tube shape by magnetic controlling target 14, is arranged in the shell 11 of cylindrical tube shape, and when work, sputter directly completes in cylindrical drum inside, and ionic fluid adopts draws power supply and draw, and is deposited on workpiece surface; Because sputter completes in cylindrical drum inside, only have charged ion to be drawn, therefore ensure 100% ion deposition; And, because the processes such as sputter all complete in cylindrical drum inside, be also cylindrical drum inside even if occur to beat arc, can not impact work; In addition, magnetic controlling target is designed to cylindrical tube shape, and its target surface area improves greatly, and far above the area of its educt beaming flow, namely the port area of cylindrical drum bottom, effectively raises sedimentation rate.
Above content is the further description of the application being done in conjunction with concrete embodiment, can not assert that the application's concrete enforcement is confined to these explanations.For the application person of an ordinary skill in the technical field, not departing under the prerequisite of the application's design, can also make some simple deduction or replace, all should be considered as belonging to the application's protection domain.
Claims (10)
1. a metal ion source, is characterized in that: comprise drawing grid (18) and drawing electric field positive pole (19) of shell (11), several magneticss (12), copper sheathing (13), magnetic controlling target (14), blow-out cover (15), cooling system (16), magnet steel (17), mesh;
Described shell (11) is the cylindrical tube shape of hollow; Described magnet steel (17), cooling system (16), copper sheathing (13) and magnetic controlling target (14) be stacked being layed in shell (11) sequentially, and not with shell (11) conducting; Magnetic controlling target (14) is embedded in copper sheathing (13), and several magneticss (12) are embedded on magnet steel (17) uniformly;
Blow-out cover (15) is fixed on the two ends of cylindrical drum shell, and stacked two ends that are arranged on magnet steel (17), cooling system (16), copper sheathing (13) and magnetic controlling target (14) in shell (11) are sequentially wrapped, between blow-out cover (15) and magnetics (12), copper sheathing (13), magnetic controlling target (14) and magnet steel (17), leave gap, all not conductings;
Described one end of drawing grid (18) and be fixed on cylindrical tube shape shell (11), the described the other end of drawing electric field positive pole (19) and be fixed on cylindrical tube shape shell (11), draws grid (18) and draws electric field positive pole (19) and all adopt insulating material to be fixedly connected with shell (11).
2. metal ion source according to claim 1, is characterized in that: also comprise Faraday cup (110), Faraday cup (110), in drawing grid (18) afterwards, is fixedly connected with shell (11).
3. metal ion source according to claim 1, is characterized in that: described in draw electric field positive pole (19) by the port closed of the cylindrical tube shape shell (11) being attached thereto.
4. metal ion source according to claim 3, is characterized in that: described in draw electric field positive pole (19) and adopt any one preparation in stainless steel, Cu, Al, V, Ti, Cr, Mn, Ni, Zn, Zr, Nb, Mo, Pd, Ag, Ta, W, Pt, Au and conduction and non-magnetic alloy.
5. metal ion source according to claim 1, it is characterized in that: the grid (18) of drawing of described mesh are to adopt the reticulated structure of metal wire knitted or the sheet metal structure of porous, and wire or tinsel adopt any one preparation in stainless steel, Cu, Al, V, Ti, Cr, Mn, Ni, Zn, Zr, Nb, Mo, Pd, Ag, Ta, W, Pt, Au and conduction and non-magnetic alloy.
6. metal ion source according to claim 1, is characterized in that: described in the distance of drawing between the magnetic controlling target (14) in grid (18) and cylindrical tube shape shell be 2-20cm.
7. a vacuum coating system, is characterized in that: comprise metal ion source (1), vacuum chamber (2) described in claim 1-6 any one, draw power supply (3), high-power impulse magnetron sputtering power supply (4) and place the worktable (5) of pending workpiece;
Vacuum chamber (2) is enclosed cavity, metal ion source (1) and worktable (5) are fixed in vacuum chamber (2), worktable (5) is relative with one end that grid (18) are drawn in metal ion source (1) installation, is positioned at its right opposite;
Drawing power supply (3) and high-power impulse magnetron sputtering power supply (4) is arranged at outside vacuum chamber (2), draw the negative pole of power supply (3) and the grid (18) of drawing of metal ion source (1) are electrically connected, anodal be electrically connected with the electric field positive pole (19) of drawing of metal ion source (1), or anodal with draw electric field positive pole (19) and be electrically connected and be total to afterwards ground connection; The negative pole of high-power impulse magnetron sputtering power supply (4) is electrically connected with copper sheathing (13) and the magnetic controlling target (14) of metal ion source (1), plus earth.
8. vacuum coating system according to claim 7, is characterized in that: described high-power impulse magnetron sputtering power supply (4) is one or more in the high power pulsed source of the compound high power pulsed source of high power pulsed source, pulse and the direct current of single pulse mode, modulation.
9. apparatus for ionically plating according to claim 7, it is characterized in that: described in draw power supply (3) for the low-voltage power supply for the output voltage 50V～10kV of conventional thin film deposition, or be the high-voltage pulse power source for the output voltage 1kV～100kV of Plasma ion implantation; Described low-voltage power supply is selected from direct supply, the pulse power, or one or more of DC pulse composite power source.
10. apparatus for ionically plating according to claim 7, is characterized in that: the distance between described metal ion source (1) and worktable (5) is 5～50cm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105239048A (en) * | 2015-10-09 | 2016-01-13 | 北京大学深圳研究生院 | Metal plasma source and application thereof |
| CN105543791A (en) * | 2015-12-08 | 2016-05-04 | 北京大学深圳研究生院 | Metal plasma source and application thereof |
| CN109504948A (en) * | 2018-12-28 | 2019-03-22 | 北京大学深圳研究生院 | A kind of tubular sputter cathode and Ion Extraction system |
| CN114381702A (en) * | 2021-12-31 | 2022-04-22 | 北京航空航天大学 | Novel high-energy ion beam flow generation method |
| CN114540777A (en) * | 2022-01-12 | 2022-05-27 | 温州瑞明工业股份有限公司 | Ion implantation method combined with magnetron sputtering |
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| CN1087129A (en) * | 1992-11-16 | 1994-05-25 | 四川大学 | Apparatus for sputtering and codeposition with multiple plasma beams |
| CN1086853A (en) * | 1993-11-24 | 1994-05-18 | 中国科学院空间科学与应用研究中心 | Electronic beam evapouring metal ion source for material surface modification |
| CN1594649A (en) * | 2004-07-06 | 2005-03-16 | 西安交通大学 | Metal ion source |
| CN101945689A (en) * | 2008-01-30 | 2011-01-12 | 应用材料股份有限公司 | System and method for pre-ionization of surface wave launched plasma discharge sources |
| CN101285167A (en) * | 2008-06-03 | 2008-10-15 | 西安工业大学 | Ion beam emission source for outputting single ionic energy |
| CN101851747A (en) * | 2009-03-30 | 2010-10-06 | 核工业西南物理研究院 | High-current metal ion source |
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| CN105239048B (en) * | 2015-10-09 | 2018-11-09 | 北京大学深圳研究生院 | A kind of metal plasma source and its application |
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| CN114381702A (en) * | 2021-12-31 | 2022-04-22 | 北京航空航天大学 | Novel high-energy ion beam flow generation method |
| CN114381702B (en) * | 2021-12-31 | 2023-01-06 | 北京航空航天大学 | Novel high-energy ion beam flow generation method |
| CN114540777A (en) * | 2022-01-12 | 2022-05-27 | 温州瑞明工业股份有限公司 | Ion implantation method combined with magnetron sputtering |
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