CN104124499B - LTCC (low temperature co-fired ceramic) based E-band high-suppression band-pass filter - Google Patents
LTCC (low temperature co-fired ceramic) based E-band high-suppression band-pass filter Download PDFInfo
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Abstract
The invention discloses an LTCC (low temperature co fired ceramic) based E-band high-suppression band-pass filter which comprises three layers of ceramic substrate, a first metal layer with two coupling slots, a second metal layer with two coupling slots, a third metal layer, eighty-two metalized through holes, four resonant cavities, a first coupling slot, a second coupling slot, a third coupling slot, an input port and an output port. The four resonant cavities are respectively formed by eighty metalized through holes, the second layer of ceramic substrate and the third layer of ceramic substrate; the first coupling slot is formed between the first resonant cavity and the second resonant cavity, the second coupling slot is formed between the second resonant cavity and the third resonant cavity, and the third coupling slot is formed between the third resonant cavity and the fourth resonant cavity; the input port is formed by the first layer of ceramic substrate and the first metalized through hole, and the output port is formed by the first layer of ceramic substrate and the second metalized through hole. The LTCC based E-band high-suppression band-pass filter has the advantages of wide coverage of band and frequency, low insertion loss, good frequency selectivity, good resonance suppression characteristics, simple circuit structure, high controllability and the like and has excellent application prospect in the future high-rate data wireless communication.
Description
Technical field
The invention belongs to microwave technical field, it is related to a kind of bandpass filter being applied to microwave and millimeter wave circuit, especially
It is a kind of e wave band based on ltcc high suppression bandpass filter.
Background technology
Developing rapidly with radio communication, to microwave and millimeter wave system an urgent demand be that volume is less, speed faster, frequently
Rate is higher, performance is more preferable.Bandpass filter is one of most important passive device in wireless telecommunications radio system, miniaturization, height
Frequencyization and high-frequency are more and more prominent the problems such as selective.Bandpass filter is most important nothing in microwave and millimeter wave communication system
One of source device, the wave filter of a function admirable can be the more preferable signal to noise ratio improving system, carries between each channel
Isolate for more preferable, play vital effect to realizing more reliable communication system.Today's society, wireless communication system is sent out
Exhibition is swift and violent, and microwave and millimeter wave Circuits and Systems play very important effect.Whole radio communication is towards frequency is higher, speed
The aspect development such as higher, performance is more preferably, volume is less.Using substrate integration wave-guide (substrate integrated
Waveguide, abbreviation siw) millimeter wave filter receive very high attention, it can be realized high-performance and have small volume
Wave filter.It is a kind of novel waveguide, and it has the characteristics that traditional metal waveguide quality factor, easily designed, simultaneously
There is small volume, low cost, easy processing.
Traditional microwave hybrid integrated circuit by various active and passive splitter part welding or is pasted onto the outside structure of substrate
Become, it is used in combination with monolithic integrated optical circuit, so that various jumbo microwave function modules is achieved.But, conformability
Higher, manufacturing cost also sharply increases therewith, along with some restrictions of material and technology, accomplish all passive units
Part is integrated in ic, still has very big difficulty.
Content of the invention
It is an object of the invention to provide a kind of pass-band loss is low, frequency selectivity is good, structure is simple, reliability is high, one-tenth
This high suppression bandpass filter of e wave band based on ltcc low, easy to use.
The technical scheme realizing the object of the invention is: a kind of e wave band based on ltcc high suppression bandpass filter, including three
Layer ceramic substrate, the first metal layer containing two coupling gaps, the second metal layer containing two coupling gaps, the 3rd metal
Layer, 82 plated-through holes, formed by 80 plated-through holes and second layer ceramic substrate, third layer ceramic substrate
Four resonators, the first coupling gap between the first resonator and the second resonator, the second resonator and the 3rd resonator it
Between the second coupling gap, the 3rd coupling gap between the 3rd resonator and the 4th resonator, and ground floor ceramic substrate
The output port that the input port constituting with the first plated-through hole, ground floor ceramic substrate and the second plated-through hole are constituted；
Described first resonator by 23 plated-through holes be the 3rd～17 plated-through holes, the 35～tetra-
12 plated-through holes and second layer ceramic substrate, the first metal layer, second metal layer are formed；Second resonator is by 23
Plated-through hole is the 43rd～57 plated-through holes, the 75th～82 plated-through holes and third layer pottery
Substrate, second metal layer, the 3rd metal level are formed；3rd resonator is the 55th～70 by 23 plated-through holes
Seven plated-through holes and third layer ceramic substrate, second metal layer, the 3rd metal level are formed；4th resonator is by 23 gold
Genusization through hole is the 15th～37 plated-through holes and second layer ceramic substrate, the first metal layer, second metal layer are formed；
, by the first coupling slot-coupled, the second resonator and the 3rd resonator pass through second and couple for first resonator and the second resonator
Slot-coupled, the 3rd resonator and the 4th resonator are by the 3rd coupling slot-coupled.
Compared with prior art, its remarkable advantage is the present invention: (1) in-band insertion loss is little, and frequency selectivity is good, and band is outer
Suppression is high；(2) circuit realiration structure is simple, causes interior bone that waveguide cavity is divided into four resonant cavities, adjacent resonators
Coupling is changed by the spacing of through hole and the size in gap；(3) it is easily achieved in technique, relatively with common waveguide filtering
Device, because structure simply makes difficulty of processing of the present invention reduce with ltcc technology；(4) due to adopt three layers structure so that
The planar dimension of this structure is very little, and it is integrated using the structure of substrate integration wave-guide, the present invention to be easy to.
Brief description
Fig. 1 is the ground floor structure chart of the e wave band based on ltcc for the present invention high suppression bandpass filter.
Fig. 2 is the second layer structure chart of the e wave band based on ltcc for the present invention high suppression bandpass filter.
Fig. 3 is the third layer structure chart of the e wave band based on ltcc for the present invention high suppression bandpass filter.
Fig. 4 is each layer plated-through hole location drawing of the e wave band based on ltcc for the present invention high suppression bandpass filter.
Fig. 5 is the amplitude versus frequency characte simulation curve of the e wave band based on ltcc for the present invention high suppression bandpass filter.
Specific embodiment
LTCC (low temperature co-fired ceramic, ltcc) is to start the eighties in 20th century
The integrated assembly technology growing up, has become as the mainstream technology of passive integration.Ltcc technology with low dielectric loss pottery is
Substrate, using gold or silver as electrocondution slurry, has an excellent high frequency characteristics, and technique realizes disposable pressing, low temperature co-fired, significantly
Improve product and reliability and mass production capabilities.In addition ltcc technology not only allows for three-dimensionally integratedization of all passive devices
Also can realize active with passive integrated by active device labeling in chip surface.Therefore, ltcc technique provide a kind of little
The method of type, the 3d chip of lightweight, high q value and assembly, be microwave and millimeter wave frequency range high performance chipses and module great before
The integrated technique of scape.
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the present invention.
In conjunction with Fig. 1～4, the e wave band based on ltcc for the present invention high suppression bandpass filter, including three layers of ceramic substrate s1,
S2, s3, the first metal layer l1 containing two coupling gaps c1, c2, the second metal layer containing two coupling gaps c12, c34
L2, the 3rd metal level l3,82 plated-through hole v1～v82, by 80 plated-through hole v3～v82 and second layer pottery
Four resonators r1, r2, r3, r4, the first resonator r1 and the second resonator that porcelain substrate s2, third layer ceramic substrate s3 are formed
The first coupling gap c12 between r2, the second coupling gap c23 between the second resonator r2 and the 3rd resonator r3, the 3rd
The 3rd coupling gap c34 between resonator r3 and the 4th resonator r4, and ground floor ceramic substrate s1 and first metallization
The output port p2 that the input port p1, ground floor ceramic substrate s1 and the second plated-through hole v2 that through hole v1 is constituted is constituted；Institute
State the first resonator r1 by 23 plated-through holes be the 3rd～17 plated-through hole v3, v4, v5, v6, v7, v8, v9,
V10, v11, v12, v13, v14, v15, v16, v17, the 35th～42 plated-through hole v35, v36, v37, v38,
V39, v40, v41, v42 and second layer ceramic substrate s2, the first metal layer l1, second metal layer l2 are formed；Second resonator r2
By 23 plated-through holes be the 43rd～57 plated-through hole v43, v44, v45, v46, v47, v48, v49,
V50, v51, v52, v53, v54, v55, v56, v57, the 75th～82 plated-through hole v75, v76, v77, v78,
V79, v80, v81, v82 and third layer ceramic substrate s3, second metal layer l2, the 3rd metal level l3 are formed；3rd resonator r3
By 23 plated-through holes be the 55th～77 plated-through hole v55, v56, v57, v58, v59, v60, v61,
V62, v63, v64, v65, v66, v67, v68, v69, v70, v71, v72, v73, v74, v75, v76, v77 and third layer ceramic base
Plate s3, second metal layer l2, the 3rd metal level l3 are formed；4th resonator r4 by 23 plated-through holes be the 15th～
37 plated-through hole v15, v16, v17, v18, v19, v20, v21, v22, v23, v24, v25, v26, v27, v28, v29,
V30, v31, v32, v33, v34, v35, v36, v37 and second layer ceramic substrate s2, the first metal layer l1, second metal layer l2 shape
Become；First resonator r1 and the second resonator r2 is by the first coupling gap c12 coupling, the second resonator r2 and the 3rd resonator
, by the second coupling gap c23 coupling, the 3rd resonator r3 and the 4th resonator r4 is by the 3rd coupling gap c34 coupling for r3.
The effect of coupling gap c1, c2 is to couple so that signal energy can be passed through from coupling gap, plays transmission signal energy
Effect.
Described the first metal layer l1 is arranged between ground floor ceramic substrate s1 and second layer ceramic substrate s2, the second metal
Layer l2 is arranged between second layer ceramic substrate s2 and third layer ceramic substrate s3, and the 3rd metal level l3 is arranged at third layer pottery
The bottom of substrate s3.
Described 82 plated-through hole v1～v82, the wherein the first～bis- plated-through hole v1～v2 are arranged at first
Layer ceramic substrate s1, the 3rd～42 plated-through hole v3～v42 be arranged at second layer ceramic substrate s2, the 43～eight
12 plated-through hole v43～v82 is arranged at third layer ceramic substrate s3.
Described first coupling gap c12 is to couple gap between the first resonator r1 and second resonator r2, and the
One coupling gap c12 is the circular gap being arranged at second metal layer l2；Second coupling gap c23 is the 55th～57
Gap between plated-through hole v55, v56, v57 and the 75th～77 plated-through hole v75, v76, v77；3rd coupling
Joint close gap c34 is to couple gap between the 3rd resonator r3 and the 4th resonator r4, and the 3rd coupling gap c34 is to be arranged at
The symmetrical rectangular slot of two of second layer metal layer l2.
Described 15th～17 plated-through hole v15, v16, v17 and the 35th～37 plated-through hole v35
～v37 is not only the first resonator r1 and the 4th resonator r4 and provides border, and can be by adjusting the 15th～17 gold medals
Genusization through hole v15, v16, v17 and the 35th～37 plated-through hole v35～v37 the position of the first resonator r1 from
And adjust the resonant frequency of the 4th resonator r4；The circle first coupling gap c12 of second layer metal layer l2 is the first resonator
R1 and the second resonator r2 provides border, and can be by adjusting size adjustment first resonator of the first coupling gap c12
R1 and the resonant frequency of the 4th resonator r4；55th～57 plated-through hole v55, v56, v57 and the 65th～
67 plated-through hole v65, v66, v67 are not only the second resonator r2 and the 3rd resonator r3 and provide border, and can
By adjust the 55th～57 plated-through hole v55, v56, v57 and the 65th～67 plated-through hole v65,
V66, v67, the 77th metallize thus adjusting the resonant frequency of the 3rd resonator r3 in the position of the second resonator r2 simultaneously
Through hole v77 couples gap c23 with the 55th plated-through hole v55 for second and provides border；The 3rd of second layer metal layer l2
Coupling gap c34 provides border for the 3rd resonator r3 and the 4th resonator r4, and by adjusting the 3rd coupling gap c34's
Rectangle size can adjust the resonant frequency of the 3rd resonator r3 and the 4th resonator r4.
First resonator r1 by 23 plated-through holes be the 3rd～17 plated-through hole v3, v4, v5, v6, v7,
V8, v9, v10, v11, v12, v13, v14, v15, v16, v17, the 35th～42 plated-through hole v35, v36, v37,
V38, v39, v40, v41, v42 and second layer ceramic substrate s2, the first metal layer l1, second metal layer l2 are formed.Resonator is just
It is the space that these through holes and double layer of metal plate are closed, in second layer medium, effect is to play selection frequency for position
Or the effect of storage energy.Second resonator r2, the 3rd resonator r3, the 4th resonator r4 are in the same manner.
The operation principle of the e wave band based on ltcc for the present invention high suppression bandpass filter is as follows: broadband microwave signal from
Input port p1 enters the first resonator r1, and the microwave signal in passband is coupled to the second resonance by the first coupling gap c12
Chamber r2, is coupled to the 3rd resonator r3 through the second coupling gap c23, is coupled to the 4th resonance through the 3rd coupling gap c34
Chamber r4 arrives output port p2 again, and the microwave outside passband is decayed successively outside the resonant frequency of four resonators r1, r2, r3 and r4.
By changing the change of 80 plated-through hole v3～v82 positions, the resonant frequency of resonator can be finely tuned, by the first coupling
Joint close gap c12 circle gap size and location, the 3rd coupling the symmetrical rectangular slot of gap c34 two size and location,
And second coupling gap c23 the width to change passband for the width.
Embodiment 1
The ceramic substrate relative dielectric constant of the e wave band based on ltcc for the present invention high suppression bandpass filter is 6.8, loss
Angle is just being cut to 0.002, a size of 2.8mm*1.6mm*0.52mm, and the radius of plated-through hole is 0.06mm, the table of ceramic substrate
The metal wall thickness in face is 0.01mm, and the thickness of ground floor dielectric layer is 0.1mm, and the thickness of second layer dielectric layer is 0.2mm, the
The thickness of three layers of dielectric layer is 0.2mm.As seen from Figure 5, in passband, minimum insertion loss is 2.1db, and return loss is less than
18.11db, carries a width of 71ghz～76ghz, and lower sideband 67ghz suppression is better than 55db, and upper side band 81ghz suppression is better than 56db.
In sum, frequency band of the present invention is e wave band, has band frequency and covers that wide, insertion loss is little, frequency selectivity
The good, outstanding advantages such as harmonic responses are good, circuit structure is simple, controllability is good, for following high data rate radio communication
Have and have major application prospect.
Claims (4)
1. a kind of e wave band based on ltcc high suppression bandpass filter it is characterised in that include three layers of ceramic substrate (s1, s2,
S3), the first metal layer (l1) containing two couplings gap (c1, c2), the second gold medal containing two couplings gap (c12, c34)
Belong to layer (l2), the 3rd metal level (l3), 82 plated-through holes (v1～v82), by 80 plated-through holes (v3～
V82) and four resonators (r1, r2, r3, r4) being formed of second layer ceramic substrate (s2), third layer ceramic substrate (s3), first
The first coupling gap (c12), the second resonator (r2) and the 3rd resonator between resonator (r1) and the second resonator (r2)
(r3) the second coupling gap (c23) between, the 3rd coupling gap between the 3rd resonator (r3) and the 4th resonator (r4)
(c34), and the input port (p1) that constitutes of ground floor ceramic substrate (s1) and the first plated-through hole (v1), ground floor pottery
The output port (p2) that substrate (s1) and the second plated-through hole (v2) are constituted；
Described first resonator (r1) by 23 plated-through holes be the 3rd～17 plated-through holes (v3, v4, v5, v6,
V7, v8, v9, v10, v11, v12, v13, v14, v15, v16, v17), the 35th～42 plated-through holes (v35, v36,
V37, v38, v39, v40, v41, v42) and second layer ceramic substrate (s2), the first metal layer (l1), second metal layer (l2) shape
Become；Second resonator (r2) by 23 plated-through holes be the 43rd～57 plated-through holes (v43, v44,
V45, v46, v47, v48, v49, v50, v51, v52, v53, v54, v55, v56, v57), the 75th～82 metallization logical
Hole (v75, v76, v77, v78, v79, v80, v81, v82) and third layer ceramic substrate (s3), second metal layer (l2), the 3rd gold medal
Belong to layer (l3) to be formed；3rd resonator (r3) is the 55th～77 plated-through holes by 23 plated-through holes
(v55、v56、v57、v58、v59、v60、v61、v62、v63、v64、v65、v66、v67、v68、v69、v70、v71、v72、v73、
V74, v75, v76, v77) and third layer ceramic substrate (s3), second metal layer (l2), the 3rd metal level (l3) formation；4th is humorous
Shake chamber (r4) by 23 plated-through holes be the 15th～37 plated-through holes (v15, v16, v17, v18, v19,
V20, v21, v22, v23, v24, v25, v26, v27, v28, v29, v30, v31, v32, v33, v34, v35, v36, v37) and the
Two layers of ceramic substrate (s2), the first metal layer (l1), second metal layer (l2) are formed；First resonator (r1) and the second resonator
(r2) by the first coupling gap (c12) coupling, the second resonator (r2) and the 3rd resonator (r3) are by the second coupling gap
(c23) couple, the 3rd resonator (r3) and the 4th resonator (r4) are by the 3rd coupling gap (c34) coupling；
Described first coupling gap (c12) is to couple gap between the first resonator (r1) and second resonator (r2), and
First coupling gap (c12) is the circular gap being arranged at second metal layer (l2)；Second coupling gap (c23) is the 55th
～five ten seven between plated-through hole (v55, v56, v57) and the 75th～77 plated-through holes (v75, v76, v77)
Gap；3rd coupling gap (c34) is to couple gap between the 3rd resonator (r3) and the 4th resonator (r4), and the 3rd
Coupling gap (c34) is two symmetrical rectangular slot being arranged at second layer metal layer (l2).
2. e wave band based on ltcc according to claim 1 high suppression bandpass filter is it is characterised in that described first
Metal level (l1) is arranged between ground floor ceramic substrate (s1) and second layer ceramic substrate (s2), and second metal layer (l2) is arranged
Between second layer ceramic substrate (s2) and third layer ceramic substrate (s3), the 3rd metal level (l3) is arranged at third layer ceramic base
The bottom of plate (s3).
3. e wave band based on ltcc according to claim 1 high suppression bandpass filter is it is characterised in that described 80
Two plated-through holes (v1～v82), the wherein the first～bis- plated-through hole (v1～v2) is arranged at ground floor ceramic substrate
(s1), the 3rd～42 plated-through holes (v3～v42) be arranged at second layer ceramic substrate (s2), the 43rd～82
Plated-through hole (v43～v82) is arranged at third layer ceramic substrate (s3).
4. e wave band based on ltcc according to claim 1 high suppression bandpass filter is it is characterised in that the described tenth
Five～17 plated-through holes (v15, v16, v17) and the 35th～37 plated-through holes (v35～v37) are not only the
One resonator (r1) and the 4th resonator (r4) provide border, and can be by adjusting the 15th～17 plated-through holes
(v15, v16, v17) and the 35th～37 plated-through holes (v35～v37) in the position of the first resonator (r1) thus
Adjust the resonant frequency of the 4th resonator (r4)；The circle first coupling gap (c12) of second layer metal layer (l2) is humorous for first
Shake chamber (r1) and the second resonator (r2) offer border, and can be by adjusting the size adjustment of the first coupling gap (c12)
First resonator (r1) and the resonant frequency of the 4th resonator (r4)；55th～57 plated-through holes (v55, v56,
V57) it is not only the second resonator (r2) and the 3rd resonator with the 65th～67 plated-through holes (v65, v66, v67)
(r3) provide border, and can be by adjusting the 55th～57 plated-through holes (v55, v56, v57) and the 60th
Five～67 plated-through holes (v65, v66, v67) are in the position of the second resonator (r2) thus adjusting the 3rd resonator (r3)
Resonant frequency, simultaneously the 77th plated-through hole (v77) couple gap with the 55th plated-through hole (v55) for second
(c23) provide border；3rd coupling gap (c34) of second layer metal layer (l2) is the 3rd resonator (r3) and the 4th resonator
(r4) provide border, and the 3rd resonator (r3) can be adjusted by the rectangle size adjusting the 3rd coupling gap (c34)
Resonant frequency with the 4th resonator (r4).
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| CN201410378043.3A CN104124499B (en) | 2014-08-01 | 2014-08-01 | LTCC (low temperature co-fired ceramic) based E-band high-suppression band-pass filter |
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| CN109244618A (en) * | 2018-10-31 | 2019-01-18 | 深圳市麦捷微电子科技股份有限公司 | Novel multiple layer ceramic dielectric substrate waveguide bandpass filter |
| CN112701431A (en) * | 2020-12-15 | 2021-04-23 | 电子科技大学 | Filter and wireless communication system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2010040119A1 (en) * | 2008-10-03 | 2010-04-08 | Purdue Research Foundation | Tunable evanescent-mode cavity filter |
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| CN2798332Y (en) * | 2005-06-08 | 2006-07-19 | 东南大学 | Integrated waveguide cavity filter with damaged bottom structure substrate |
| US8258892B2 (en) * | 2008-02-19 | 2012-09-04 | The Royal Institution For The Advancement Of Learning/Mcgill University | High-speed bandpass serial data link |
| CA2629035A1 (en) * | 2008-03-27 | 2009-09-27 | Her Majesty The Queen In Right Of Canada, As Represented By The Minister Of Industry, Through The Communications Research Centre Canada | Waveguide filter with broad stopband based on sugstrate integrated waveguide scheme |
| CN102354781A (en) * | 2011-08-09 | 2012-02-15 | 电子科技大学 | Planar integrated waveguide bandpass filter with quasi-elliptic function type |
| CN102800906B (en) * | 2012-07-27 | 2015-04-15 | 电子科技大学 | Multilayer ceramic substrate integrated waveguide filter |
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| WO2010040119A1 (en) * | 2008-10-03 | 2010-04-08 | Purdue Research Foundation | Tunable evanescent-mode cavity filter |
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Inventor after: Dai Yongsheng Inventor after: Chen Long Inventor after: Zhou Wei Inventor after: Xu Xinying Inventor after: Gu Jia Inventor before: Chen Long Inventor before: Zhou Wei Inventor before: Xu Xinying Inventor before: Gu Jia Inventor before: Dai Yongsheng |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: CHEN LONG ZHOU WEI XU XINYING GU JIA DAI YONGSHENG TO: DAI YONGSHENG CHEN LONG ZHOU WEI XU XINYING GU JIA |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170125 Termination date: 20200801 |