CN104124499A - LTCC (low temperature co-fired ceramic) based E-band high-suppression band-pass filter - Google Patents
LTCC (low temperature co-fired ceramic) based E-band high-suppression band-pass filter Download PDFInfo
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Abstract
The invention discloses an LTCC (low temperature co fired ceramic) based E-band high-suppression band-pass filter which comprises three layers of ceramic substrate, a first metal layer with two coupling slots, a second metal layer with two coupling slots, a third metal layer, eighty-two metalized through holes, four resonant cavities, a first coupling slot, a second coupling slot, a third coupling slot, an input port and an output port. The four resonant cavities are respectively formed by eighty metalized through holes, the second layer of ceramic substrate and the third layer of ceramic substrate; the first coupling slot is formed between the first resonant cavity and the second resonant cavity, the second coupling slot is formed between the second resonant cavity and the third resonant cavity, and the third coupling slot is formed between the third resonant cavity and the fourth resonant cavity; the input port is formed by the first layer of ceramic substrate and the first metalized through hole, and the output port is formed by the first layer of ceramic substrate and the second metalized through hole. The LTCC based E-band high-suppression band-pass filter has the advantages of wide coverage of band and frequency, low insertion loss, good frequency selectivity, good resonance suppression characteristics, simple circuit structure, high controllability and the like and has excellent application prospect in the future high-rate data wireless communication.
Description
Technical field
The invention belongs to microwave technical field, relate to a kind of band pass filter that is applied to microwave and millimeter wave circuit, particularly the high inhibition zone bandpass filter of a kind of E wave band based on LTCC.
Background technology
Along with the develop rapidly of radio communication, to microwave and millimeter wave system, an urgent demand is that volume is less, speed is faster, frequency is higher, performance is better.Band pass filter is one of most important passive device in wireless telecommunications radio system, and the problems such as miniaturization, high frequency and high-frequency selectivity are more and more outstanding.Band pass filter is one of most important passive device in microwave and millimeter wave communication system, the filter of a function admirable can be the signal to noise ratio of better improvement system, for better isolation is provided between each channel, play vital effect to realizing more reliable communication system.Society, development of wireless communication systems is swift and violent, and microwave and millimeter wave Circuits and Systems are being brought into play very important effect.The aspects such as whole radio communication is higher towards frequency, speed is higher, performance is better, volume is less development.Adopt the millimeter wave filter of substrate integration wave-guide (Substrate Integrated Waveguide is called for short SIW) to be subject to very high attention, it can be realized high-performance and have the filter that volume is little.It is a kind of novel waveguide, and it has traditional metal waveguide quality factor, is easy to the feature of design, also has the advantages such as volume is little, cost is low, easy processing simultaneously.
Traditional microwave hybrid integrated circuit is by various active and passive splitter part welding or stick on substrate outside and form, it and monolithic integrated circuit combine use, various jumbo microwave function modules are achieved.But conformability is higher, manufacturing cost also sharply increases thereupon, adds some restriction of material and technology, accomplish all passive components to be integrated in IC, still has very large difficulty.
Summary of the invention
The object of the present invention is to provide the high inhibition zone bandpass filter of the E wave band based on LTCC that a kind of pass-band loss is low, frequency selectivity good, simple in structure, reliability is high, cost is low, easy to use.
The technical scheme that realizes the object of the invention is: the high inhibition zone bandpass filter of a kind of E wave band based on LTCC, comprise three layers of ceramic substrate, the first metal layer that contains two coupling gaps, the second metal level that contains two coupling gaps, the 3rd metal level, 82 plated-through holes, by 80 plated-through holes and second layer ceramic substrate, the 3rd layer of four resonant cavity that ceramic substrate forms, between the first resonant cavity and the second resonant cavity first coupling gap, between the second resonant cavity and the 3rd resonant cavity second coupling gap, between the 3rd resonant cavity and the 4th resonant cavity the 3rd coupling gap, and the input port of ground floor ceramic substrate and the first plated-through hole formation, the output port that ground floor ceramic substrate and the second plated-through hole form,
By 23 plated-through holes, the 3rd～17 plated-through hole, the 35～42 plated-through hole and second layer ceramic substrate, the first metal layer, the second metal level form described the first resonant cavity; By 23 plated-through holes, the 43～57 plated-through hole, the 75～82 plated-through hole and the 3rd layer of ceramic substrate, the second metal level, the 3rd metal level form the second resonant cavity; The 3rd resonant cavity is that the 55～77 plated-through hole and the 3rd layer of ceramic substrate, the second metal level, the 3rd metal level form by 23 plated-through holes; The 4th resonant cavity is that the 15～37 plated-through hole and second layer ceramic substrate, the first metal layer, the second metal level form by 23 plated-through holes; The first resonant cavity and the second resonant cavity are by the first coupling slot-coupled, and the second resonant cavity and the 3rd resonant cavity are by the second coupling slot-coupled, and the 3rd resonant cavity and the 4th resonant cavity are by the 3rd coupling slot-coupled.
Compared with prior art, its remarkable advantage is in the present invention: (1) in-band insertion loss is little, and frequency selectivity is good, and Out-of-band rejection is high; (2) circuit implementation structure is simple, causes interior bone that waveguide cavity is divided into four resonant cavities, and the coupling of adjacent resonators changes by the spacing of through hole and the size in gap; (3) in technique, be easy to realize, relatively with common waveguide filter, make difficulty of processing reduction of the present invention due to simple in structure by LTCC technology; (4) due to the structure of three layers adopting, make the planar dimension of this structure very little, and it is integrated to adopt the structure of substrate integration wave-guide that the present invention is convenient to.
Brief description of the drawings
Fig. 1 is the ground floor structure chart that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC.
Fig. 2 is the second layer structure chart that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC.
Fig. 3 is the three-layered node composition that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC.
Fig. 4 is the each layer of plated-through hole location drawing that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC.
Fig. 5 is the amplitude-frequency characteristic simulation curve that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC.
Embodiment
LTCC (Low Temperature Co-fired Ceramic, LTCC) is the integrated assembly technology that starts to grow up the eighties in 20th century, has become the mainstream technology of passive integration.LTCC technology is taking low dielectric loss pottery as substrate, using gold or silver as electrocondution slurry, has excellent high frequency characteristics, and technique realizes disposable pressing, low temperature co-fired, has greatly improved product and reliability and mass production capabilities.In addition LTCC technology not only allow that the three-dimensional of all passive devices is integrated also can be by active device labeling in chip surface, realize active and passive integrated.Therefore, LTCC technique provides the 3D chip of a kind of miniaturization, lightweight, high Q value and the method for assembly, is the integrated technique that microwave and millimeter wave frequency range high performance chips and module have prospect.
Below in conjunction with drawings and the specific embodiments, the present invention is described in further detail.
In conjunction with Fig. 1～4, the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC, comprise three layers of ceramic substrate S1, S2, S3, contain two coupling gap C1, the first metal layer L1 of C2, contain two coupling gap C12, the second metal level L2 of C34, the 3rd metal level L3, 82 plated-through hole V1～V82, by 80 plated-through hole V3～V82 and second layer ceramic substrate S2, the 3rd layer of four the resonant cavity R1 that ceramic substrate S3 forms, R2, R3, R4, between the first resonant cavity R1 and the second resonant cavity R2 the first gap C12 that is coupled, between the second resonant cavity R2 and the 3rd resonant cavity R3 the second gap C23 that is coupled, between the 3rd resonant cavity R3 and the 4th resonant cavity R4 the 3rd gap C34 that is coupled, and the input port P1 of ground floor ceramic substrate S1 and the first plated-through hole V1 formation, the output port P2 that ground floor ceramic substrate S1 and the second plated-through hole V2 form, by 23 plated-through holes, the 3rd～17 plated-through hole V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13, V14, V15, V16, V17, the 35～42 plated-through hole V35, V36, V37, V38, V39, V40, V41, V42 and second layer ceramic substrate S2, the first metal layer L1, the second metal level L2 form described the first resonant cavity R1, by 23 plated-through holes, the 43～57 plated-through hole V43, V44, V45, V46, V47, V48, V49, V50, V51, V52, V53, V54, V55, V56, V57, the 75～82 plated-through hole V75, V76, V77, V78, V79, V80, V81, V82 and the 3rd layer of ceramic substrate S3, the second metal level L2, the 3rd metal level L3 form the second resonant cavity R2, by 23 plated-through holes, the 55～77 plated-through hole V55, V56, V57, V58, V59, V60, V61, V62, V63, V64, V65, V66, V67, V68, V69, V70, V71, V72, V73, V74, V75, V76, V77 and the 3rd layer of ceramic substrate S3, the second metal level L2, the 3rd metal level L3 form the 3rd resonant cavity R3, by 23 plated-through holes, the 15～37 plated-through hole V15, V16, V17, V18, V19, V20, V21, V22, V23, V24, V25, V26, V27, V28, V29, V30, V31, V32, V33, V34, V35, V36, V37 and second layer ceramic substrate S2, the first metal layer L1, the second metal level L2 form the 4th resonant cavity R4, the first resonant cavity R1 and the second resonant cavity R2 are by the first coupling gap C12 coupling, and the second resonant cavity R2 and the 3rd resonant cavity R3 are by the second coupling gap C23 coupling, and the 3rd resonant cavity R3 and the 4th resonant cavity R4 are by the 3rd coupling gap C34 coupling.The effect of coupling gap C1, C2 is coupling, and signal energy can be passed through from coupling gap, plays the effect of transmission of signal energy.
Described the first metal layer L1 is arranged between ground floor ceramic substrate S1 and second layer ceramic substrate S2, the second metal level L2 is arranged between second layer ceramic substrate S2 and the 3rd layer of ceramic substrate S3, and the 3rd metal level L3 is arranged at the bottom of the 3rd layer of ceramic substrate S3.
Described 82 plated-through hole V1～V82, wherein the first～bis-plated-through hole V1～V2 is arranged at ground floor ceramic substrate S1, the 3rd～42 plated-through hole V3～V42 and is arranged at second layer ceramic substrate S2, the 43～82 plated-through hole V43～V82 and is arranged at the 3rd layer of ceramic substrate S3.
Described the first coupling gap C12 is the coupling gap between the first resonant cavity R1 and second resonant cavity R2, and the first coupling gap C12 is the circular gap that is arranged at the second metal level L2; The second coupling gap C23 is the gap between the 55～57 plated-through hole V55, V56, V57 and the 75～77 plated-through hole V75, V76, V77; The 3rd coupling gap C34 is the coupling gap between the 3rd resonant cavity R3 and the 4th resonant cavity R4, and the 3rd coupling gap C34 is two symmetrical rectangular slot that are arranged at second layer metal layer L2.
Described the 15～17 plated-through hole V15, V16, V17 and the 35～37 plated-through hole V35～V37 be not only for the first resonant cavity R1 and the 4th resonant cavity R4 provide border, thereby and can be by adjusting the 15～17 plated-through hole V15, V16, V17 and the resonance frequency of the 35～37 plated-through hole V35～V37 at the position of the first resonant cavity R1 adjustment the 4th resonant cavity R4; The circle first of the second layer metal layer L2 gap C12 that is coupled provides border for the first resonant cavity R1 and the second resonant cavity R2, and can be by regulating size adjustment the first resonant cavity R1 of the first coupling gap C12 and the resonance frequency of the 4th resonant cavity R4; The the 55～57 plated-through hole V55, V56, V57 and the 65～67 plated-through hole V65, V66, V67 are not only for the second resonant cavity R2 and the 3rd resonant cavity R3 provide border, thereby and can adjust by adjusting the 55～57 plated-through hole V55, V56, V57 and the 65～67 plated-through hole V65, V66, V67 the resonance frequency of the 3rd resonant cavity R3 in the position of the second resonant cavity R2, while the 77 plated-through hole V77 and the 55 plated-through hole V55 provide border for the second coupling gap C23; The 3rd coupling gap C34 of second layer metal layer L2 provides border for the 3rd resonant cavity R3 and the 4th resonant cavity R4, and by regulating the rectangle size of the 3rd coupling gap C34 can regulate the resonance frequency of the 3rd resonant cavity R3 and the 4th resonant cavity R4.
By 23 plated-through holes, the 3rd～17 plated-through hole V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13, V14, V15, V16, V17, the 35～42 plated-through hole V35, V36, V37, V38, V39, V40, V41, V42 and second layer ceramic substrate S2, the first metal layer L1, the second metal level L2 form the first resonant cavity R1.Resonant cavity is exactly the space that these through holes and double layer of metal plate are closed, and position is in second layer medium, and effect is to play the effect of selecting frequency or storage power.The second resonant cavity R2, the 3rd resonant cavity R3, the 4th resonant cavity R4 are in like manner.
The operation principle of the high inhibition zone bandpass filter of E wave band that the present invention is based on LTCC is as follows: broadband microwave signal enters the first resonant cavity R1 from input port P1, microwave signal in passband is coupled to the second resonant cavity R2 by the first coupling gap C12, be coupled to the 3rd resonant cavity R3 through the second coupling gap C23, be coupled to the 4th resonant cavity R4 through the 3rd coupling gap C34 and arrive output port P2 again, the microwave outside passband is decayed outward in the resonance frequency of four resonant cavity R1, R2, R3 and R4 successively.By changing the variation of 80 plated-through hole V3～V82 positions, can finely tune the resonance frequency of resonant cavity, the size by the first circular gap of coupling gap C12 and position, the size of two symmetrical rectangular slot of the 3rd coupling gap C34 and the width of position and the second coupling gap C23 change the width of passband.
Embodiment 1
The ceramic substrate relative dielectric constant that the present invention is based on the high inhibition zone bandpass filter of E wave band of LTCC is 6.8, loss angle tangent is 0.002, be of a size of 2.8mm*1.6mm*0.52mm, the radius of plated-through hole is 0.06mm, the surperficial metallic walls thickness of ceramic substrate is 0.01mm, the thickness of ground floor dielectric layer is 0.1mm, and the thickness of second layer dielectric layer is 0.2mm, and the thickness of the 3rd layer of dielectric layer is 0.2mm.As seen from Figure 5, in passband, minimum insertion loss is 2.1dB, and return loss is less than 18.11dB, and bandwidth is 71GHz～76GHz, and lower sideband 67GHz suppresses to be better than 55dB, and upper sideband 81GHz suppresses to be better than 56dB.
In sum, frequency band of the present invention is E wave band, there is band frequency and cover the outstanding advantages such as wide, insertion loss is little, frequency selectivity good, harmonic responses is good, circuit structure is simple, controllability is good, have and have major application prospect for following high data rate radio communication.
Claims (5)
1. the high inhibition zone bandpass filter of the E wave band based on LTCC, it is characterized in that, comprise three layers of ceramic substrate (S1, S2, S3), contain two coupling gap (C1, C2) the first metal layer (L1), contain two coupling gap (C12, C34) the second metal level (L2), the 3rd metal level (L3), 82 plated-through holes (V1～V82), by 80 plated-through holes (V3～V82) and second layer ceramic substrate (S2), four resonant cavity (R1 that the 3rd layer of ceramic substrate (S3) forms, R2, R3, R4), between the first resonant cavity (R1) and the second resonant cavity (R2) first coupling gap (C12), between the second resonant cavity (R2) and the 3rd resonant cavity (R3) second coupling gap (C23), between the 3rd resonant cavity (R3) and the 4th resonant cavity (R4) the 3rd coupling gap (C34), and the input port (P1) of ground floor ceramic substrate (S1) and the first plated-through hole (V1) formation, the output port (P2) that ground floor ceramic substrate (S1) and the second plated-through hole (V2) form,
By 23 plated-through holes, the 3rd～17 plated-through hole (V3, V4, V5, V6, V7, V8, V9, V10, V11, V12, V13, V14, V15, V16, V17), the 35～42 plated-through hole (V35, V36, V37, V38, V39, V40, V41, V42) and second layer ceramic substrate (S2), the first metal layer (L1), the second metal level (L2) form described the first resonant cavity (R1); By 23 plated-through holes, the 43～57 plated-through hole (V43, V44, V45, V46, V47, V48, V49, V50, V51, V52, V53, V54, V55, V56, V57), the 75～82 plated-through hole (V75, V76, V77, V78, V79, V80, V81, V82) and the 3rd layer of ceramic substrate (S3), the second metal level (L2), the 3rd metal level (L3) form the second resonant cavity (R2); The 3rd resonant cavity (R3) is that the 55～77 plated-through hole (V55, V56, V57, V58, V59, V60, V61, V62, V63, V64, V65, V66, V67, V68, V69, V70, V71, V72, V73, V74, V75, V76, V77) and the 3rd layer of ceramic substrate (S3), the second metal level (L2), the 3rd metal level (L3) form by 23 plated-through holes; The 4th resonant cavity (R4) is that the 15～37 plated-through hole (V15, V16, V17, V18, V19, V20, V21, V22, V23, V24, V25, V26, V27, V28, V29, V30, V31, V32, V33, V34, V35, V36, V37) and second layer ceramic substrate (S2), the first metal layer (L1), the second metal level (L2) form by 23 plated-through holes; The first resonant cavity (R1) and the second resonant cavity (R2) are by the first coupling gap (C12) coupling, the second resonant cavity (R2) and the 3rd resonant cavity (R3) are by the second coupling gap (C23) coupling, and the 3rd resonant cavity (R3) and the 4th resonant cavity (R4) are by the 3rd coupling gap (C34) coupling.
2. the high inhibition zone bandpass filter of the E wave band based on LTCC according to claim 1, it is characterized in that, described the first metal layer (L1) is arranged between ground floor ceramic substrate (S1) and second layer ceramic substrate (S2), the second metal level (L2) is arranged between second layer ceramic substrate (S2) and the 3rd layer of ceramic substrate (S3), and the 3rd metal level (L3) is arranged at the bottom of the 3rd layer of ceramic substrate (S3).
3. the high inhibition zone bandpass filter of the E wave band based on LTCC according to claim 1, it is characterized in that, described 82 plated-through holes (V1～V82), wherein the first～bis-plated-through hole (V1～V2) is arranged at that ground floor ceramic substrate (S1), the 3rd～42 plated-through hole (V3～V42) are arranged at second layer ceramic substrate (S2), the 43～82 plated-through hole (V43～V82) is arranged at the 3rd layer of ceramic substrate (S3).
4. the high inhibition zone bandpass filter of the E wave band based on LTCC according to claim 1, it is characterized in that, described the first coupling gap (C12) is the coupling gap between the first resonant cavity (R1) and second resonant cavity (R2), and the first coupling gap (C12) is for being arranged at the circular gap of the second metal level (L2); The second coupling gap (C23) is the gap between the 55～57 plated-through hole (V55, V56, V57) and the 75～77 plated-through hole (V75, V76, V77); The 3rd coupling gap (C34) is the coupling gap between the 3rd resonant cavity (R3) and the 4th resonant cavity (R4), and the 3rd coupling gap (C34) is for being arranged at two symmetrical rectangular slot of second layer metal layer (L2).
5. the high inhibition zone bandpass filter of the E wave band based on LTCC according to claim 1, it is characterized in that, described the 15～17 plated-through hole (V15, V16, V17) be not only that the first resonant cavity (R1) and the 4th resonant cavity (R4) provide border with the 35～37 plated-through hole (V35～V37), and can be by adjusting the 15～17 plated-through hole (V15, V16, V17) with the 35～37 plated-through hole (V35～V37) at the first resonant cavity (R1) thus position adjust the resonance frequency of the 4th resonant cavity (R4), the circle first of second layer metal layer (L2) gap (C12) that is coupled is that the first resonant cavity (R1) and the second resonant cavity (R2) provide border, and can be by regulating size adjustment first resonant cavity (R1) in the first coupling gap (C12) and the resonance frequency of the 4th resonant cavity (R4), the the 55～57 plated-through hole (V55, V56, V57) with the 65～67 plated-through hole (V65, V66, V67) be not only that the second resonant cavity (R2) and the 3rd resonant cavity (R3) provide border, and can be by adjusting the 55～57 plated-through hole (V55, V56, V57) with the 65～67 plated-through hole (V65, V66, V67) at the second resonant cavity (R2) thus position adjust the resonance frequency of the 3rd resonant cavity (R3), the 77 plated-through hole (V77) is that the second coupling gap (C23) provides border with the 55 plated-through hole (V55) simultaneously, the 3rd coupling gap (C34) of second layer metal layer (L2) is that the 3rd resonant cavity (R3) and the 4th resonant cavity (R4) provide border, and by regulating the rectangle size in the 3rd coupling gap (C34) can regulate the resonance frequency of the 3rd resonant cavity (R3) and the 4th resonant cavity (R4).
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| CN112701431A (en) * | 2020-12-15 | 2021-04-23 | 电子科技大学 | Filter and wireless communication system |
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